CN115915899A - Composite film for optimizing injected particles and preparation method thereof - Google Patents
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Abstract
The invention discloses a composite film for optimizing injected particles and a preparation method thereof, wherein the method comprises the following steps: preparing a piezoelectric wafer and a substrate wafer; carrying out ion implantation treatment on the piezoelectric wafer, and spraying ion beams by using particle beams generated by a particle shower in the whole ion implantation treatment process, wherein the particle beams form an included angle with the ion beams during spraying to obtain a piezoelectric wafer implantation piece comprising a film layer, a separation layer and a residual layer; bonding the piezoelectric wafer injection sheet and the substrate wafer to obtain a bonded body; and carrying out annealing heat treatment on the bonded body to separate the residual layer from the thin film layer so as to obtain the composite film. According to the invention, the particle spraying operation is introduced in the ion implantation process, the particle beams forming a certain included angle with the implanted ion beams are used for spraying and intercepting particles, the particle number of the prepared composite film can be reduced to the level of 300 particles/sheet at the lowest, the surface uniformity of the prepared composite film is greatly improved, and the preparation method is suitable for large-scale industrial popularization.
Description
Technical Field
The invention relates to the technical field of semiconductor preparation, in particular to a composite film for optimizing injected particles and a preparation method thereof.
Background
Lithium niobate and lithium tantalate materials have the advantages of high Curie temperature, strong spontaneous polarization, high electromechanical coupling coefficient, excellent electro-optic effect and the like, and are widely applied to the fields of nonlinear optics, ferroelectricity, piezoelectricity, electro-optic and the like, and particularly, the lithium niobate and lithium tantalate materials are more and more widely concerned and applied to the fields of thin film acoustic wave devices, filters, modulators and the like. The preparation methods of the single crystal lithium niobate thin film and the single crystal lithium tantalate thin film mainly comprise an epitaxial growth method, a thinning polished body material method, an injection bonding separation method and the like, wherein the epitaxial growth method is difficult to obtain a large-area, uniform and complete thin film due to the reasons that the lattice mismatch between lithium niobate and lithium tantalate and a substrate material is large, the expansion coefficients are different and the like; the thinning and polishing method is difficult to obtain a film with nano-scale thickness, and the influence of a damaged layer caused in the thinning and polishing process on a following device is large; therefore, the method of ion implantation bonding separation is a more common method at present.
The ion implantation and bonding separation method is mainly characterized in that ions are implanted into a thin film wafer such as lithium niobate or lithium tantalate, the thin film wafer is divided into a thin film layer, a separation layer and a residual layer, then the ion implantation surface of the thin film wafer is bonded with a substrate layer to form a bonded body, and finally the bonded body is subjected to heat treatment to separate Yu Zhiceng from the thin film layer and keep the thin film layer on the substrate layer, so that the thin film layer with the performance close to that of the thin film wafer is prepared.
However, ion implantation is very sensitive to particle contamination, and particles on the surface of the sample block the ion flux injection when preparing a composite thin film by ion implantation bonding separation. Generally, the larger the injected beam current is, the more particles are generated, and although the particles can be cleaned away after injection, the injection shielding of the particles will generate defects in the injection layer of the sample, and further generate excessive particles on the surface of the prepared composite film, which causes the performance of the film to be reduced, so that the existing preparation process needs to be improved to improve the defects.
Disclosure of Invention
In order to solve the problems in the background art, the application provides a composite film for optimizing injected particles and a preparation method thereof, which can reduce particles on the surface of the film in the preparation process and improve the performance of the film.
In order to achieve the purpose, the application is realized by the following scheme:
in one aspect, the present application provides a method for preparing a composite film for optimizing injected particles, comprising the following steps:
preparing a piezoelectric wafer and a substrate wafer;
performing ion implantation treatment on the piezoelectric wafer, and spraying the ion beam by using a particle beam generated by a particle shower in the whole ion implantation treatment process, wherein the particle beam forms an included angle with the ion beam during spraying to obtain a piezoelectric wafer injection sheet comprising a thin film layer, a separation layer and a residual layer, wherein the thin film layer is positioned on the surface of the piezoelectric wafer, the separation layer is positioned between the thin film layer and the residual layer, and the injected ions are distributed in the separation layer;
bonding the piezoelectric wafer injection sheet and the substrate wafer to obtain a bonded body;
and carrying out annealing heat treatment on the bonding body to separate the residual layer from the thin film layer so as to obtain the composite film.
Furthermore, the beam current of the particle beam is 0.4-1A; the beam current of the ion beam is more than or equal to 1mA.
Further, the particle beam forms an included angle of 60-90 degrees with the ion beam when spraying.
Further, the particle shower is an electronic shower or an ion shower, wherein ions used by the ion shower are one or more of hydrogen ions, oxygen ions, helium ions, nitrogen ions or argon ions.
Furthermore, the ion implantation uses one of helium ion, hydrogen ion, nitrogen ion, oxygen ion or argon ion, and the ion implantation dosage is 2 × 10 16 ions/cm 2 ～4×10 16 ions/cm 2 The ion implantation energy is 40-400 keV.
Further, the piezoelectric wafer is made of one of lithium niobate, lithium tantalate, quartz, ceramic, lithium tetraborate, potassium titanyl phosphate, rubidium titanyl phosphate, gallium arsenide or silicon wafer; the substrate wafer is made of one of a silicon substrate, lithium niobate, lithium tantalate, a silicon wafer, a silicon carbide wafer, silicon nitride, quartz, sapphire or quartz glass.
Further, the bonding the piezoelectric wafer implant sheet and the substrate wafer includes:
manufacturing an isolation layer on one surface of a substrate wafer, wherein the isolation layer is silicon dioxide, silicon oxynitride or silicon nitride;
and bonding the piezoelectric wafer injection sheet and the isolation layer to obtain the bonded body.
Further, the manufacturing of the isolation layer on one side of the substrate wafer includes:
depositing polycrystalline silicon or amorphous silicon on one surface of the substrate wafer by adopting a deposition method, or generating corrosion damage by adopting a corrosion method, or generating injection damage by adopting an injection method to obtain a defect layer;
and manufacturing an isolation layer on the defect layer.
Further, the annealing heat treatment comprises primary annealing and secondary annealing, wherein the temperature of the primary annealing is 180-300 ℃, and the temperature of the secondary annealing is 300-600 ℃.
On the other hand, the application also provides a composite film for optimizing injected particles, which is characterized by being prepared by the excellent method.
The invention introduces particle spraying operation in the ion implantation process, utilizes particle beams forming a certain included angle with the implanted ion beams to spray and intercept particles, effectively reduces the number of particles on the surface of the composite film through proper particle beam beams, and simultaneously can not influence the ion implantation. Compared with the composite film prepared by the prior art, the particle number of the composite film is 1-1.3 ten thousand particles per sheet, the particle number of the composite film prepared by the method can be reduced to the level of 600 particles per sheet, and can be reduced to the level of 300 particles at least, the surface uniformity of the prepared composite film is greatly improved, and the method is suitable for large-scale industrial popularization.
Drawings
The following is a brief description of what is presented in the drawings of the specification:
fig. 1 is a schematic flow chart of a method for manufacturing a composite film for optimizing injected particles according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram illustrating formation of a composite film in a method for manufacturing a composite film by optimizing injected particles according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of a composite film structure for optimizing injected particles according to an embodiment of the present disclosure;
FIG. 4 is a graph showing the results of measuring the surface particle size of the composite film prepared in example 1 of the present application;
FIG. 5 is a graph showing the results of measuring the surface particle size of the composite film prepared in example 2 of the present application;
FIG. 6 is a graph showing the results of measuring the surface particle size of the composite film prepared in example 3 of the present application;
FIG. 7 is a graph showing the results of measuring the surface particle size of the composite film prepared in example 4 of the present application;
FIG. 8 is a graph showing the results of measuring the surface particle size of the composite film prepared in example 5 of the present application;
FIG. 9 is a graph showing the results of measuring the surface particle size of the composite film prepared in comparative example 1;
reference numerals: 1-substrate wafer, 2-defect layer, 3-isolation layer and 4-thin film layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Firstly, the invention provides a method for preparing a composite film for optimizing injected particles, as shown in fig. 1, specifically comprising:
s1, preparing a piezoelectric wafer and a substrate wafer.
Preparing a piezoelectric wafer, wherein the piezoelectric wafer can be lithium niobate, lithium tantalate, quartz, ceramic, lithium tetraborate, potassium titanyl phosphate, rubidium titanyl phosphate, gallium arsenide, silicon wafer or the like; a substrate wafer is prepared, and the substrate wafer can be a silicon substrate, lithium niobate, lithium tantalate, a silicon wafer, a silicon carbide wafer, silicon nitride, quartz, sapphire, quartz glass or the like.
And S2, performing ion implantation treatment on the piezoelectric wafer, and spraying the ion beam by using a particle beam generated by a particle shower in the whole ion implantation treatment process, wherein the particle beam forms an included angle with the ion beam during spraying, so that the piezoelectric wafer implantation sheet comprising the thin film layer, the separation layer and the residual layer is obtained.
The particle shower is selected from an electronic shower or an ion shower, and in some optional modes, the selected ion of the ion shower can be one or more of hydrogen ions, oxygen ions, helium ions, nitrogen ions, argon ions and the like.
Particle spraying operation is introduced in the ion implantation process, the whole implantation process needs spraying, particle beams forming a certain included angle with implanted ion beams are used for spraying and intercepting particles, the number of particles on the surface of the composite film is effectively reduced through proper particle beam current, and ion implantation cannot be influenced. The angle between the ion beam and the particle beam in this application may be any angle that is not parallel, preferably 60 to 90 °.
Optionally, the particle shower uses a tungsten filament to heat the ionized gas for arc striking, and the arc striking ions are led out under the action of a magnetic field and act on the injected beam current.
The beam current of the ion beam is more than or equal to 1mA, the beam current of the particle beam generated by the particle shower is 0.4-1A, when the shower beam current is less than 0.4A, the effect of spraying and intercepting particles is insufficient, and when the shower beam current is more than 1A, the interception of injected beam current can be increased, and the effect of ion injection is influenced.
The ion implantation method in the present application may be any ion implantation method in the prior art, and the implanted ions may be ions that can generate gas by heat treatment, for example: the implanted ions may be hydrogen ions, helium ions, nitrogen ions, oxygen ions, or argon ions. When implanting ions, the implantation dose can be 2 × 10 16 ions/cm 2 ～4×10 16 ions/cm 2 The implantation energy may be 40KeV to 400KeV, for example, 50KeV.
In addition, in the ion implantation process, the thickness of the thin film layer can be adjusted by adjusting the ion implantation depth, and specifically, the greater the ion implantation depth, the greater the thickness of the prepared thin film layer; conversely, the smaller the depth of ion implantation, the smaller the thickness of the thin film layer produced.
And forming a thin film layer, a separation layer and a residual layer in the piezoelectric wafer after the injection and the spraying are finished, wherein the thin film layer is positioned on the surface of the piezoelectric wafer, the separation layer is positioned between the thin film layer and the residual layer, and the injected ions are distributed in the separation layer.
And S3, bonding the piezoelectric wafer injection sheet and the substrate wafer to obtain a bonded body.
And contacting the substrate wafer with the thin film layer of the piezoelectric wafer injection sheet, and bonding the piezoelectric wafer and the substrate wafer together by using a die bonding method to form a bonded body.
The bonding mode in the present application may be any bonding mode in the prior art, for example, a surface activation bonding mode is adopted to obtain a bonded body; the surface activation method is not limited in the present application, and for example, the surface activation may be performed by a method such as plasma activation or chemical solution activation.
In this step, the piezoelectric wafer implanting piece may be directly bonded to the substrate wafer, that is, the substrate wafer is a single-layer substrate, so as to obtain a bonded body, and the single-layer substrate is one of a silicon substrate, lithium niobate, lithium tantalate, a silicon wafer, a silicon carbide wafer, silicon nitride, quartz, sapphire, and quartz glass.
In other optional modes, a silicon dioxide layer, silicon oxynitride or silicon nitride can be manufactured on one surface of the substrate wafer to obtain an isolation layer; and then, the piezoelectric wafer injection sheet is in complete contact with the isolation layer to obtain the bonding body.
The isolation layer may be formed by LPCVD (Low Pressure Chemical Vapor Deposition) or PECVD (Plasma Enhanced Chemical Vapor Deposition), and any one of the conventional techniques may be used to form a silicon oxide layer, a silicon oxynitride layer, or a silicon nitride layer on one surface of the substrate wafer to obtain the isolation layer.
In other alternatives, it is also optional to fabricate the defect layer first and then fabricate the silicon dioxide layer, silicon oxynitride or silicon nitride. If the isolating layer is directly manufactured on one surface of the substrate wafer, current carriers can be generated, so that the defect layer is manufactured firstly, and the defect layer has lattice defects with certain density, so that the current carriers existing between the isolating layer and the substrate wafer can be captured, the current carriers at the interface of the isolating layer and the substrate wafer are prevented from being accumulated, and the loss of the composite film is reduced. There are several methods for forming the defective layer that can be selected. Specifically, a defect layer is obtained by depositing polycrystalline silicon or amorphous silicon by a deposition method or generating a corrosion damage layer by a corrosion method; or generating an injection damage layer by an injection method to obtain a defect layer; and then manufacturing a silicon dioxide layer on the defect layer to obtain the isolation layer.
And S4, carrying out annealing heat treatment on the bonding body to separate the residual layer from the thin film layer, thereby obtaining the composite thin film.
Heating and annealing the bonding body to separate the thin film layer from the residual layer; the thin film layer is then bonded to the composite substrate to form the composite film.
In the specific operation, the heat treatment process can be carried out for 1-100 hours at 180-600 ℃. Wherein the annealing heat treatment comprises primary annealing and secondary annealing, wherein the temperature of the primary annealing is 180-300 ℃, the aim is to strip off the residual layer and separate the thin film layer from the residual layer, and the temperature of the secondary annealing is 300-600 ℃, and the aim is to eliminate injection damage.
In the heat treatment process, bubbles are formed in the separation layer, for example, H ions form hydrogen, he ions form helium and the like, the bubbles in the separation layer are connected into one piece along with the progress of the heat treatment, finally, the separation layer is cracked, and Yu Zhiceng is separated from the thin film layer, so that the residual layer is stripped from the bonding body, and the composite film is obtained.
As shown in fig. 2, which is a schematic diagram of the formation of the composite thin film provided by the present application, finally, the thin film layer of the composite thin film is further subjected to edging, polishing, and cleaning, and the structure of the composite thin film is obtained as shown in fig. 3.
To further illustrate the technical solutions in the present application, the embodiments of the present application further disclose the following specific examples.
Example 1
Step 1, preparing a 80-micrometer silicon wafer and a 250-micrometer lithium niobate wafer, respectively fixing the silicon wafer or the lithium niobate wafer on a porous ceramic sucker of polishing equipment, carrying out chemical mechanical polishing treatment to obtain a smooth surface, and then carrying out semiconductor RCA cleaning on the two wafers to obtain a clean surface.
And 2, oxidizing the first surface of the silicon wafer by a thermal oxidation method to form a silicon dioxide layer, wherein the oxidation thickness of the silicon dioxide layer is 10 microns.
Step 3, implanting He into the lithium niobate wafer processed in the step 1 by adopting an ion implantation method + The lithium niobate wafer is divided into Yu Zhiceng, a separation layer and a thin film layer in this order from the implantation surface, and He is implanted + Ions are distributed on the separation layer to obtain a single crystal lithium niobate wafer implantation piece; by ion implantationImplanted He + The implant dose parameters were: the implantation dose is 2 × 10 16 ions/cm 2 The implantation energy is 200keV, and the beam current is 2ma.
And 5, contacting the single-crystal lithium niobate wafer injection sheet with the silicon dioxide layer, and bonding by adopting a direct bonding method to obtain a bonded body.
And 6, putting the bonding body into an annealing furnace, preserving heat for 2 hours at 200 ℃, separating the bonding body at a separation layer, annealing for 2 hours at 380 ℃, eliminating injection damage to obtain a composite film, and detecting the surface granularity of the composite film, wherein the result is shown in figure 4.
And 7, taking out the composite film from the annealing furnace, fixing the composite film on a porous ceramic sucker of polishing equipment, performing chemical mechanical polishing treatment on the film layer, and then performing RCA cleaning to obtain a clean surface.
Example 2
Step 1, preparing a 100-micron silicon wafer and a 300-micron lithium tantalate wafer, respectively fixing the silicon wafer or the lithium tantalate wafer on a porous ceramic sucker of polishing equipment, carrying out chemical mechanical polishing treatment to obtain a smooth surface, and then carrying out semiconductor RCA cleaning on the two wafers to obtain a clean surface.
And 2, oxidizing the first surface of the silicon wafer by a thermal oxidation method to form a silicon dioxide layer, wherein the oxidation thickness of the silicon dioxide layer is 5 microns.
Step 3, injecting He into the lithium tantalate wafer processed in the step 1 by adopting an ion implantation method + The lithium niobate wafer is divided into Yu Zhiceng, a separation layer and a thin film layer in this order from the implantation surface, and implanted He + Ions are distributed in the separation layer to obtain a single crystal lithium niobate wafer implantation piece; implanting He by ion implantation + The injection parameters are: the implantation dose is 2 × 10 16 ions/cm 2 The implantation energy is 200keV, and the beam current is 1ma.
the sprayed beam current is controlled to be 0.5A, and the whole injection process needs to be subjected to spraying operation.
And 5, contacting the single-crystal lithium tantalate wafer injection sheet with the silicon dioxide layer, and bonding by adopting a direct bonding method to obtain a bonded body.
And 6, putting the bonding body into an annealing furnace, preserving heat for 4 hours at 280 ℃, separating the bonding body at a separation layer, annealing for 3 hours at 350 ℃, eliminating injection damage to obtain a composite film, and detecting the surface granularity of the composite film, wherein the result is shown in fig. 5.
And 7, taking out the composite film from the annealing furnace, fixing the composite film on a porous ceramic sucker of polishing equipment, performing chemical mechanical polishing treatment on the film layer, and then performing RCA cleaning to obtain a clean surface.
Example 3
Step 1, preparing a 100-micron silicon wafer and a 400-micron lithium tantalate wafer, respectively fixing the silicon wafer or the lithium tantalate wafer on a porous ceramic sucker of polishing equipment, carrying out chemical mechanical polishing treatment to obtain a smooth surface, and then carrying out semiconductor RCA cleaning on the two wafers to obtain a clean surface.
And 2, oxidizing the first surface of the silicon wafer by a thermal oxidation method to form a silicon dioxide layer, wherein the oxidation thickness of the silicon dioxide layer is 15 microns.
Step 3, implanting He into the lithium niobate wafer processed in the step 1 by adopting an ion implantation method + The lithium niobate wafer is divided into Yu Zhiceng, a separation layer and a thin film layer in this order from the implantation surface, and implanted He + Ions are distributed in the separation layer to obtain a single crystal lithium niobate wafer implantation piece; implanting He by ion implantation + The implantation dose parameters were: the implantation dose is 2 × 10 16 ions/cm 2 The implantation energy is 200keV, and the beam current is 1ma.
And 5, contacting the single-crystal lithium tantalate wafer injection piece with the silicon dioxide layer, and bonding by adopting a direct bonding method to obtain a bonded body.
And step 6, placing the bonding body into an annealing furnace, preserving heat for 3 hours at 220 ℃, separating the bonding body from the separation layer, annealing for 2 hours at 450 ℃, eliminating injection damage to obtain a composite film, and carrying out surface granularity detection on the obtained composite film, wherein the result is shown in fig. 6.
And 7, taking the composite film out of the annealing furnace, fixing the composite film on a porous ceramic sucker of polishing equipment, performing chemical mechanical polishing treatment on the film layer, and then performing RCA cleaning to obtain a clean surface.
Example 4
Step 1, preparing a 150-micron silicon wafer and a 300-micron lithium niobate wafer, respectively fixing the silicon wafer or the lithium niobate wafer on a porous ceramic sucker of polishing equipment, carrying out chemical mechanical polishing treatment to obtain a smooth surface, and then carrying out semiconductor RCA cleaning on the two wafers to obtain a clean surface.
And 2, oxidizing the first surface of the silicon wafer by a thermal oxidation method to form a silicon dioxide layer, wherein the oxidation thickness of the silicon dioxide layer is 20 microns.
Step 3, implanting He into the lithium niobate wafer processed in the step 1 by adopting an ion implantation method + The lithium niobate wafer is divided into Yu Zhiceng, a separation layer and a thin film layer in this order from the implantation surface, and implanted He + Distributing ions in the separation layer to obtain single crystal lithium niobate wafer implantation piece, implanting He by ion implantation method + The implantation dose parameters were: the implantation dose is 2 × 10 16 ions/cm 2 The implantation energy is 200keV, and the beam current is 1ma.
And 5, contacting the single-crystal lithium niobate wafer injection sheet with the silicon dioxide layer, and bonding by adopting a direct bonding method to obtain a bonded body.
And 6, putting the bonding body into an annealing furnace, preserving heat for 2 hours at 240 ℃, separating the bonding body at a separation layer, preserving heat for 2 hours at 350 ℃, eliminating injection damage to obtain a composite film, and detecting the surface granularity of the composite film, wherein the result is shown in fig. 7.
And 7, taking the composite film out of the annealing furnace, fixing the composite film on a porous ceramic sucker of polishing equipment, performing chemical mechanical polishing treatment on the film layer, and then performing RCA cleaning to obtain a clean surface.
Example 5
Step 1, preparing a 100-micron silicon wafer and a 300-micron lithium niobate wafer, respectively fixing the silicon wafer or the lithium niobate wafer on a porous ceramic sucker of polishing equipment, carrying out chemical mechanical polishing treatment to obtain a smooth surface, and then carrying out semiconductor RCA cleaning on the two wafers to obtain a clean surface.
And 2, oxidizing the first surface of the silicon wafer by a thermal oxidation method to form a silicon dioxide layer, wherein the oxidation thickness of the silicon dioxide layer is 55 microns.
Step 3, implanting He into the lithium niobate wafer processed in the step 1 by adopting an ion implantation method + The lithium niobate wafer is divided into Yu Zhiceng, a separation layer and a thin film layer in this order from the implantation surface, and He is implanted + Ions are distributed in the separation layer to obtain a single crystal lithium niobate wafer implantation piece; implanting He by ion implantation + The implant dose parameters were: the implantation dose is 2X 10 16 ions/cm 2 The implantation energy is 200keV, and the beam current is 1ma.
And 5, contacting the single-crystal lithium niobate wafer injection piece with the silicon dioxide layer, and bonding by adopting a direct bonding method to obtain a bonded body.
And 6, putting the bonding body into an annealing furnace, preserving heat for 2 hours at 240 ℃, separating the bonding body at a separation layer, preserving heat for 2 hours at 600 ℃, eliminating injection damage to obtain a composite film, and detecting the surface granularity of the composite film, wherein the result is shown in fig. 8.
And 7, taking the composite film out of the annealing furnace, fixing the composite film on a porous ceramic sucker of polishing equipment, performing chemical mechanical polishing treatment on the film layer, and then performing RCA cleaning to obtain a clean surface.
Comparative example 1
Step 1, preparing a 100-micron silicon wafer and a 300-micron lithium niobate wafer, respectively fixing the silicon wafer or the lithium niobate wafer on a porous ceramic sucker of polishing equipment, carrying out chemical mechanical polishing treatment to obtain a smooth surface, and then carrying out semiconductor RCA cleaning on the two wafers to obtain a clean surface.
And 2, oxidizing the first surface of the silicon wafer by a thermal oxidation method to form a silicon dioxide layer, wherein the oxidation thickness of the silicon dioxide layer is 55 microns.
Step 3, implanting He into the lithium niobate wafer processed in the step 1 by adopting an ion implantation method + The lithium niobate wafer is divided into Yu Zhiceng, a separation layer and a thin film layer in this order from the implantation surface, and implanted He + Ions are distributed in the separation layer to obtain a single crystal lithium niobate wafer implantation piece; implanting He by ion implantation + The implant dose parameters were: the implantation dose is 2 × 10 16 ions/cm 2 The implantation energy is 200keV, and the beam current is 1ma.
And 4, contacting the single-crystal lithium niobate wafer injection sheet with the silicon dioxide layer, and bonding by adopting a direct bonding method to obtain a bonded body.
And 5, placing the bonding body into an annealing furnace, preserving heat for 2 hours at 240 ℃, separating the bonding body at a separation layer, preserving heat for 2 hours at 600 ℃, eliminating injection damage to obtain a composite film, and detecting the surface granularity of the composite film, wherein the result is shown in fig. 9.
And 6, taking the composite film out of the annealing furnace, fixing the composite film on a porous ceramic sucker of polishing equipment, performing chemical mechanical polishing treatment on the film layer, and then performing RCA cleaning to obtain a clean surface.
The numbers of bin5 particles in the surface graininess test of the composite films prepared in examples 1 to 5 and comparative example 1 were counted and compared, wherein the bin5 particles are particles having a grain size of more than 0.3 μm, and the results are shown in table 1.
TABLE 1 test results of surface granularity of composite film
It can be seen from the detection data in table 1 that the composite film prepared by spraying the ion beam in the ion implantation process by using the particle shower has significantly reduced surface granularity and improved film performance compared with the composite film prepared by not using the particle shower. Meanwhile, the invention can be seen in the scope of protection, the operation parameters are adjusted to a certain extent, and more ideal experimental results can be obtained.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A preparation method of a composite film for optimizing injected particles is characterized by comprising the following steps:
preparing a piezoelectric wafer and a substrate wafer;
performing ion implantation treatment on the piezoelectric wafer, and spraying the ion beam by using a particle beam generated by a particle shower in the whole ion implantation treatment process, wherein the particle beam forms an included angle with the ion beam during spraying to obtain a piezoelectric wafer injection sheet comprising a thin film layer, a separation layer and a residual layer;
bonding the piezoelectric wafer injection sheet and the substrate wafer to obtain a bonded body;
and carrying out annealing heat treatment on the bonding body to separate the residual layer from the thin film layer to obtain the composite film.
2. The method for preparing the composite film for optimizing injected particles according to claim 1, wherein the beam current of the particle beam is 0.4-1A; the beam current of the ion beam is more than or equal to 1mA.
3. The method as claimed in claim 1, wherein the particle beam forms an angle of 60-90 ° with the ion beam when spraying.
4. The method for preparing the composite film for optimizing injected particles according to claim 1, wherein the particle shower is an electronic shower or an ion shower, wherein ions used by the ion shower are one or more of hydrogen ions, oxygen ions, helium ions, nitrogen ions or argon ions.
5. The method as claimed in claim 1, wherein the ion implantation dosage is 2 x 10, and the ion implantation dosage is one of helium ion, hydrogen ion, nitrogen ion, oxygen ion, and argon ion 16 ions/cm 2 ～4×10 16 ions/cm 2 The ion implantation energy is 40-400 keV.
6. The method for preparing a composite film for optimizing injected particles according to claim 1, wherein the piezoelectric wafer is made of one of lithium niobate, lithium tantalate, quartz, ceramic, lithium tetraborate, potassium titanyl phosphate, rubidium titanyl phosphate, gallium arsenide or silicon wafer; the substrate wafer is made of one of a silicon substrate, lithium niobate, lithium tantalate, a silicon wafer, a silicon carbide wafer, silicon nitride, quartz, sapphire or quartz glass.
7. The method for preparing a composite film for optimizing injected particles according to claim 1, wherein the bonding of the piezoelectric wafer injection sheet and the substrate wafer comprises:
manufacturing an isolation layer on one surface of a substrate wafer, wherein the isolation layer is silicon dioxide, silicon oxynitride or silicon nitride;
and bonding the piezoelectric wafer injection sheet and the isolation layer to obtain the bonded body.
8. The method as claimed in claim 7, wherein the step of forming the isolation layer on one side of the substrate wafer comprises:
depositing polycrystalline silicon or amorphous silicon on one surface of the substrate wafer by adopting a deposition method, or generating corrosion damage by adopting a corrosion method, or generating injection damage by adopting an injection method to obtain a defect layer;
and manufacturing an isolation layer on the defect layer.
9. The method for preparing the composite film for optimizing the injection of the particles as claimed in claim 1, wherein the annealing heat treatment comprises a primary annealing and a secondary annealing, wherein the temperature of the primary annealing is 180-300 ℃, and the temperature of the secondary annealing is 300-600 ℃.
10. A particle-optimized composite film, which is prepared by the method for preparing a particle-optimized composite film according to any one of claims 1 to 9.
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| CN116761494A (en) * | 2023-08-22 | 2023-09-15 | 青禾晶元(晋城)半导体材料有限公司 | Composite piezoelectric substrate and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116761494A (en) * | 2023-08-22 | 2023-09-15 | 青禾晶元(晋城)半导体材料有限公司 | Composite piezoelectric substrate and preparation method thereof |
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