CN1131359A - 低功率时效率提高的rf功率放大器 - Google Patents

低功率时效率提高的rf功率放大器 Download PDF

Info

Publication number
CN1131359A
CN1131359A CN95120588A CN95120588A CN1131359A CN 1131359 A CN1131359 A CN 1131359A CN 95120588 A CN95120588 A CN 95120588A CN 95120588 A CN95120588 A CN 95120588A CN 1131359 A CN1131359 A CN 1131359A
Authority
CN
China
Prior art keywords
power amplifier
control
vva
power
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN95120588A
Other languages
English (en)
Inventor
约翰·韦尼·鲍恩
德怀特·戴维斯·多尔蒂
斯图尔特·哈里·温帕
小梅尔文·韦斯特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of CN1131359A publication Critical patent/CN1131359A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/007Control dependent on the supply voltage
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/20Automatic control
    • H03G3/30Automatic control in amplifiers having semiconductor devices
    • H03G3/3036Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/20Automatic control
    • H03G3/30Automatic control in amplifiers having semiconductor devices
    • H03G3/3036Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H03G3/3047Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers for intermittent signals, e.g. burst signals
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/405Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising more than three power stages
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/516Some amplifier stages of an amplifier use supply voltages of different value

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

提供一种装置和方法,其采用简单的电压比率技术给可变电压衰减器和GaAsRF功率放大器的栅极提供具体电压,以控制放大器的效率。功率放大器的输出被采样,而后反馈至可变电压衰减器作为控制信号。控制信号的比率部分被用于控制功率放大器的栅极偏置。当功率要求小于最大值时,电压比率负向变化,导致电流减小。当RF输出增加时,电压比例正向变化。因此,当DC电压变化时,功率放大器的输出功率将相应变化,以更高的效率提供所要求的输出功率。

Description

低功率时效率提高的RF功率放大器
本发明大体涉及射频(RF)功率放大器,具体地说是涉及低功率输入时放大器效率的提高。
当今的移动通信系统需要能够在较大的输出功率范围和输入电源变化时工作而不影响系统性能的高性能发射机。发射机相对其基站的距离确定控制RF功率放大器必须传递给天线的输出功率的信号的值。所要求的处于最小和最大值之间的功率电平通常是外推出来的。另外,对于移动通信,电源电压倾向于随电池的充电和放电周期剧烈变化。当电压低于标称值时,电压的变化会对输出功率产生不利影响,而当电压高于标称值时,电压变化会对效率产生不利影响。
现有的解决功率放大器(PA)问题的方法是通过采用将三态的高效率砷化镓(GaAs)功率放大器跟随一可变电压衰减器(VVA)实现的。然而,当通过增加VVA衰减(补偿输入驱动电平)来减小PA的输出功率时,PA的作用就象一A类放大器。当放大器被补偿时,发射机的工作效率就会降低。
在移动的数字蜂窝式通信系统中,RF输出功率放大器消耗电池功率贮量的大部分。低效率的PA会耗尽电池并导致通话时间大大减少。因此,由于补偿PA时会增加功耗,所以恒流PA对蜂巢式应用不理想。移动发射机应在不需要最大输出功率时具有较低的电流损耗。
根据本发明的原理,提供一种控制RF功率放大器效率的技术。该技术依赖VVA和对GaAs PA栅极电压的动态控制来改变PA的工作电流。这种功率控制技术采用简单的电压比率方法给VVA和PA的栅极提供具体电压。该技术提供了一种增加GaAs功率放大器在较低输出功率时的效率的有效方法。它还增强了电池刚充完电并接近其输出电压规范上限时PA’的性能。当电源电压增加时,PA所要求的电流可以减少同时保持同样的输出功率。
为使本发明相关领域的技术人员较好地了解如何实现本发明,下文将参照附图详细描述装置和方法的最佳实施例。其中:
图1是根据本发明所述RF功率放大器的示意框图;
图2是图1的详细示意图。
图1简略地说明概要地示于10的RF功率放大器的控制电路所需的操作。进站信号进入可变电压衰减器(VVA)12的输入端12A。该信号而后被RF功率放大器(PA)14放大。通过放大器14后,部分输出信号14A由耦合器24采样。采样信号被检波和滤波,并给驱动电路20(Vga)提供依赖功率的参考电压(Vdet)。驱动电路20于是就控制WA12。Vga驱动电路20本身跟随有一个排序电路18,其通过直流—直流电压转换稳压器16被供电。排序电路18还控制功率放大器级的栅极驱动电路22。Vga驱动电路20由编程的功率控制电压(Vcont)53和Vdet控制。部分Vcont53用来提供功率放大器14的最佳栅极偏置电压(Vg1,Vg2和Vg3)。
本发明电路更详细的描述示于图2。RF信号在12A进入VVA12,然后在功率放大器14中被放大。PA14的输出14A由电压Vd72供电。采样RF信号在被馈送至检波器和低通滤波器56前用固定衰减器74衰减。滤波后的电压被馈送至运算放大器(运放)50的非反相端。运放50的输出通过与运放50的反相端并联的电阻52和二极管54反馈以形成放大。成比例的控制信号通电阻48注入运放50的反相端。
控制信号由通过电阻30进入运放30反相端的Vd脉冲电压33产生。运放30的非反相端由部分经过电阻34的电压Vdd38供电,其它部分通电阻36到地。运放40的输出通过电阻32和42被反馈,以形成控制信号。随着电压Vcont53和电阻44、46、48的应用,成比例的控制信号被加到运放50,控制电压的比率部分控制VVA12。其它部分通过电阻器58加到运放70的反相端。阈值基准电压由基准金属半导体场效应晶体管60提供。该电压由电压Vdd62与电阻64和66一起确定。基准电压也被加到运放70的反相端。运放70的非反相端通过电阻78接地。运放70的输出,在通过电阻68加倍反馈至反相端的同时,被用于PA14的栅极偏置((Vg1,Vg2和Vg3)。当输出要求小于最大值时,电压比率负向变化,这将导致DC电流减少,从而提高效率。当所要求的RF输出功率增加时,比率正向变化,使得PA14达到其最大输出。类似地,当DC电压变化时,与之直接相关的PA的输出功率也将变化。施加VVA12和栅极的电压从而以提高的效率提供所需的PA输出功率。
虽然参照最佳实施例描述所提出的发明,但有关领域的普通技术人员很容易知道可对其进行变化和修改而没有脱离所附权利要求规定的本发明的精神或范围。

Claims (11)

1.用于控制RF功率放大器效率的装置,其包括:
可变电压衰减器;
RF功率放大装置;和
所述RF功率放大装置的动态电压控制装置,其包括用在所述可变电压衰减器和控制RF功率输出的所述RF功率放大装置多个栅极间的电压比率技术。
2.权利要求1所述的装置,其中所述RF功率放大装置是一多级功率放大器。
3.权利要求2所述的装置,其中所述功率放大器还包括三级。
4.权利要求1所述的装置,其中所述动态电压控制装置又包括用于抽取部分功率输出信号的提取装置(耦合器),可变电压衰减器驱动电路和多级功率放大器的偏置驱动电路。
5.权利要求4所述装置,其中所述提取装置是一RF耦合器,其将所述RF功率放大装置的输出馈送至所述可变电压衰减器的驱动电路。
6.权利要求4所述的装置,其中所述可变电压衰减器驱动电路包括至少一个运算放大器以产生成比例的控制信号来控制所述可变电压衰减器。
7.权利要求4所述的装置,其中所述功率放大器多级驱动电路包括至少一个运算放大器以产生一定比率的部分所述成比例控制信号来控制所述功率放大器的多个栅极偏置。
8.权利要求7所述的装置,其中所述成比例控制信号的所述比率部分还控制所述可变电压衰减器。
9.一种用于控制RF功率放大器效率的方法,其包括步骤:
通过可变电压衰减器和功率放大器放大注入的RF信号;
采样部分所述RF信号,对所述RF信号的采样的部分进行滤波;
放大所述滤波信号的受控部分以控制可变电压衰减器;
产生处于所述控制部分和阈电压之间的比率部分以控制所述功率放大器的多个栅极偏置。
10.权利要求9所述的方法,其中所述对控制部分的放大还包括将所述RF信号被采样的部分注入至少一个运算放大器的步骤。
11.权利要求9所述的方法,其中所述产生比率部分的步骤还包括将所述控制部分和所述阈电压注入至少一个运算放大器的步骤。
CN95120588A 1994-12-15 1995-12-11 低功率时效率提高的rf功率放大器 Pending CN1131359A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US356,812 1989-05-24
US08/356,812 US5568094A (en) 1994-12-15 1994-12-15 Rf power amplifier with increased efficiency at low power

Publications (1)

Publication Number Publication Date
CN1131359A true CN1131359A (zh) 1996-09-18

Family

ID=23403053

Family Applications (1)

Application Number Title Priority Date Filing Date
CN95120588A Pending CN1131359A (zh) 1994-12-15 1995-12-11 低功率时效率提高的rf功率放大器

Country Status (6)

Country Link
US (1) US5568094A (zh)
EP (1) EP0717492A1 (zh)
JP (1) JPH08222961A (zh)
KR (1) KR100203725B1 (zh)
CN (1) CN1131359A (zh)
TW (1) TW289882B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009009987A1 (fr) * 2007-07-17 2009-01-22 Huawei Technologies Co., Ltd. Procédé et dispositif pour suivre un service d'amplification de puissance doherty
CN105684303A (zh) * 2013-08-29 2016-06-15 爱立信(中国)通信有限公司 驱动器电路和相关联的功率放大器组装件、无线电基站及方法
CN108023552A (zh) * 2017-11-30 2018-05-11 电子科技大学 一种用于微波无线电能传输装置的射频功率放大器系统

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6418304B1 (en) 1998-09-16 2002-07-09 Lucent Technologies Inc. Method and apparatus for improving efficiency of high-power linear amplifier
US6466772B1 (en) 1998-09-25 2002-10-15 Skyworks Solutions, Inc. Apparatus and method for improving power control loop linearity
US6261871B1 (en) * 1999-03-11 2001-07-17 Conexant Systems, Inc. Method and structure for temperature stabilization in flip chip technology
JP3739614B2 (ja) * 1999-11-24 2006-01-25 アルプス電気株式会社 出力電力調整を行う送信機
US6825719B1 (en) 2000-05-26 2004-11-30 Intel Corporation RF power amplifier and methods for improving the efficiency thereof
US6771675B1 (en) 2000-08-17 2004-08-03 International Business Machines Corporation Method for facilitating simultaneous multi-directional transmission of multiple signals between multiple circuits using a single transmission line
US7095788B1 (en) 2000-08-17 2006-08-22 International Business Machines Corporation Circuit for facilitating simultaneous multi-directional transmission of multiple signals between multiple circuits using a single transmission line
US6587511B2 (en) 2001-01-26 2003-07-01 Intel Corporation Radio frequency transmitter and methods thereof
US20030123566A1 (en) * 2001-12-27 2003-07-03 Jaime Hasson Transmitter having a sigma-delta modulator with a non-uniform polar quantizer and methods thereof
US20030125065A1 (en) * 2001-12-27 2003-07-03 Ilan Barak Method and apparatus for generating an output signal
US6788151B2 (en) 2002-02-06 2004-09-07 Lucent Technologies Inc. Variable output power supply
US7336753B2 (en) * 2003-06-26 2008-02-26 Marvell International Ltd. Transmitter
US7912145B2 (en) * 2003-12-15 2011-03-22 Marvell World Trade Ltd. Filter for a modulator and methods thereof
US7356315B2 (en) * 2003-12-17 2008-04-08 Intel Corporation Outphasing modulators and methods of outphasing modulation
US8059571B2 (en) * 2008-03-01 2011-11-15 Georgia Tech Research Corporation Methodology for designing environment adaptive ultra low power wireless communication systems and methods
US7936214B2 (en) * 2008-03-28 2011-05-03 Medtronic, Inc. Third order derivative distortion cancellation for ultra low power applications
US8618876B2 (en) 2008-05-30 2013-12-31 Qualcomm Incorporated Reduced power-consumption transmitters
US8514016B2 (en) 2011-01-18 2013-08-20 Skyworks Solutions, Inc. Single die power amplifier with closed loop power control

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4646028A (en) * 1984-08-27 1987-02-24 Texas Instruments Incorporated GaAs monolithic medium power amplifier
FI82796C (fi) * 1989-05-12 1991-04-10 Nokia Mobira Oy Koppling foer alstring av laoga effektnivaoer i saendaren av en radiotelefon.
TW198152B (zh) * 1990-10-18 1993-01-11 Hitachi Seisakusyo Kk
US5101173A (en) * 1990-11-28 1992-03-31 The United States Of America As Represented By The Secretary Of The Air Force Stored program controlled module amplifier bias and amplitude/phase compensation apparatus
JP2703667B2 (ja) * 1991-01-10 1998-01-26 三菱電機株式会社 電力増幅装置
JP2871889B2 (ja) * 1991-04-16 1999-03-17 三菱電機株式会社 高周波電力増幅装置
JPH05299944A (ja) * 1991-05-30 1993-11-12 Nec Corp Rf電力増幅器
US5307512A (en) * 1991-06-03 1994-04-26 Motorola, Inc. Power control circuitry for achieving wide dynamic range in a transmitter
US5432473A (en) * 1993-07-14 1995-07-11 Nokia Mobile Phones, Limited Dual mode amplifier with bias control
US5329249A (en) * 1993-10-13 1994-07-12 Pacific Monolithics, Inc. High efficiency RF power amplifier

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009009987A1 (fr) * 2007-07-17 2009-01-22 Huawei Technologies Co., Ltd. Procédé et dispositif pour suivre un service d'amplification de puissance doherty
CN105684303A (zh) * 2013-08-29 2016-06-15 爱立信(中国)通信有限公司 驱动器电路和相关联的功率放大器组装件、无线电基站及方法
CN108023552A (zh) * 2017-11-30 2018-05-11 电子科技大学 一种用于微波无线电能传输装置的射频功率放大器系统

Also Published As

Publication number Publication date
JPH08222961A (ja) 1996-08-30
EP0717492A1 (en) 1996-06-19
US5568094A (en) 1996-10-22
TW289882B (zh) 1996-11-01
KR100203725B1 (en) 1999-06-15

Similar Documents

Publication Publication Date Title
CN1131359A (zh) 低功率时效率提高的rf功率放大器
CN100527605C (zh) 放大器及使用它的高频功率放大器
CN1074609C (zh) 提高放大器效率的方法和装置
EP3940942B1 (en) Method and power supply for rf power amplifier
US6130579A (en) Feed-forward biasing for RF amplifiers
CA2298711C (en) Device and method for controlling output power of mobile communication terminal
CN100505528C (zh) 保持rf功率放大器的线性的方法和电路
KR100821197B1 (ko) 고효율 혼합모드 전력 증폭기
US20060226909A1 (en) Monolithic supply-modulated rf power amplifier and dc-dc power converter ic
CN101473531B (zh) 电压升压跟随器的集成实现方式及其方法
KR100630340B1 (ko) 전력증폭기의 바이어스 제어 회로
CN101179257A (zh) 改进了尺寸和成本的高频功率放大器
JP2002027104A (ja) 無線通信システムの電池式送受話器ユニット用無線周波電力増幅器
CN203457110U (zh) 一种高效率可变增益e类射频功率放大器
CN102215029B (zh) D类音频功率放大器及其音频信号处理方法
CN1050720C (zh) 应用大功率放大器的通信设备
CN105119574B (zh) 带pop噪声抑制的d类功放电路
JP2002094392A (ja) 送信電力制御方法及び送信電力制御装置並びに移動無線局
CN201623691U (zh) 功率放大器的电压驱动装置及功率放大系统
EP1766773B1 (en) Power source and method for controlling operational power
CN1035583C (zh) 低电源电压输出驱动器
US20060290424A1 (en) Linear power efficient radio frequency (RF) driver system and method with power level control
CN216929980U (zh) 一种电压击穿可控的功率放大器
CN102063093B (zh) 改良的加减速机构控制模块及其控制方法
KR20020094628A (ko) 가변 동작점 전력 증폭기

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C01 Deemed withdrawal of patent application (patent law 1993)
WD01 Invention patent application deemed withdrawn after publication