CN113131880A - Radio frequency power amplifier - Google Patents
Radio frequency power amplifier Download PDFInfo
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- CN113131880A CN113131880A CN201911395045.2A CN201911395045A CN113131880A CN 113131880 A CN113131880 A CN 113131880A CN 201911395045 A CN201911395045 A CN 201911395045A CN 113131880 A CN113131880 A CN 113131880A
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- amplifier
- radio frequency
- power amplifier
- circuit
- frequency power
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
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Abstract
The invention discloses a radio frequency power amplifier, which comprises at least one stage of amplifier, and at least one tolerance circuit, wherein each tolerance circuit is connected between the output end of one amplifier and a working power supply in series; the tolerance circuit is used for clamping the saturated output voltage and current of the corresponding amplifier. The invention utilizes the existing manufacturing process of the radio frequency power amplifier, clamps the saturated output voltage and current of the corresponding amplifier by additionally arranging the tolerance circuit between the output end of the amplifier and the working power supply, and can effectively improve the firmness of the radio frequency power amplifier on the premise of not increasing the process cost of devices.
Description
Technical Field
The invention relates to the field of power amplifiers, in particular to a radio frequency power amplifier.
Background
Ruggedness (ruggedness) of an rf power amplifier refers to its ability to withstand high voltages or high currents without permanent damage to the devices used in the rf power amplifier when in a high power output (or input) state. The tolerance of the rf power amplifier, which may be driven to a high power state under various intentional or unintentional conditions, is an important measure of the reliability and safety of the rf power amplifier.
With the development of the communication industry, the integration level of the rf power amplifier is higher and higher, and the operating frequency of the rf power amplifier is also higher and higher. As a result, the devices and processes used in rf power amplifiers, and particularly rf power amplifier integrated circuits, tend to have reduced resistance to high voltages and currents. However, the usage scenarios of radio frequency power amplifiers are increasingly demanding on their endurance. In order to meet the requirements of the foregoing application scenarios, the existing processing methods generally improve the tolerance of the rf power amplifier by using a more robust device process, and such processing methods are often difficult to manufacture, resulting in an increase in the manufacturing cost of the device. How to provide an implementation mode which has no high requirement on device process requirements and can effectively improve the tolerance of the radio frequency power amplifier is a problem to be solved urgently.
Disclosure of Invention
The invention aims to overcome the defects that the manufacturing difficulty exists in the prior art for improving the tolerance of a radio frequency power amplifier by using a firmer device process, so that the device cost is increased, and provides a radio frequency power amplifier which is realizable by using the prior radio frequency power amplifier manufacturing process and can effectively improve the firmness.
The invention solves the technical problems through the following technical scheme:
the invention provides a radio frequency power amplifier, which comprises at least one stage of amplifier, and at least one tolerance circuit, wherein each tolerance circuit is connected between the output end of one amplifier and a working power supply in series; the tolerance circuit is used for clamping the saturated output voltage and current of the corresponding amplifier.
Preferably, the tolerant circuitry comprises a clamp circuit, a first inductive device and a second inductive device; the first inductive device and the second inductive device are connected in series between the output end of the amplifier and the working power supply; the first inductive device and the clamping circuit are connected in parallel.
Preferably, one end of the first inductive device is electrically connected to the second inductive device;
the other end of the first inductive device is electrically connected with the working power supply;
or, the other end of the first inductive device is electrically connected with the output end of the amplifier.
Preferably, the clamping circuit includes at least one diode, and when the number of the diodes is plural, the plural diodes are connected in series.
Preferably, the direction of the diode in the radio frequency power amplifier is not limited.
Preferably, the first inductive device is an inductor on a chip or a part of the inductor on the chip or a patch inductor or a chip lead; the second inductive device is an inductor on a chip or a part of the inductor on the chip or a patch inductor or a chip lead.
Preferably, the diode is implemented by a triode.
Preferably, the amplifier is a triode, and the output end is a collector of the triode;
or, the amplifier is a field effect transistor, and the output end is a drain electrode of the field effect transistor.
Preferably, the radio frequency power amplifier includes two stages of the amplifiers, which are a driving stage and an output stage respectively, and the tolerant circuit is connected in series between an output end of the driving stage and the working power supply;
and/or the endurance circuit is connected between the output end of the output stage and the working power supply in series.
Preferably, the radio frequency power amplifier further comprises a device biasing circuit and a decoupling capacitor; the device biasing circuit is used for realizing the biasing of the input end of the amplifier, and the decoupling capacitor is connected between the working power supply and the ground in series.
Preferably, the radio frequency power amplifier further comprises a high frequency input terminal and a high frequency output terminal;
the radio frequency power amplifier also comprises a front end matching circuit and/or an output matching circuit;
when the radio frequency power amplifier comprises the front end matching circuit, the front end matching circuit is connected between the high frequency input end and the input end of the amplifier in series;
when the radio frequency power amplifier includes the output matching circuit, the output matching circuit is connected in series between the output terminal of the amplifier and the high frequency output terminal.
Preferably, the tolerance circuit also provides a direct current to the amplifier; the withstand circuit also provides impedance matching for the output of the amplifier.
The positive progress effects of the invention are as follows: the invention provides a radio frequency power amplifier, which utilizes the existing radio frequency power amplifier manufacturing process, clamps the saturated output voltage and current of the corresponding amplifier by additionally arranging a tolerance circuit between the output end of the amplifier and a working power supply, and can effectively improve the firmness of the radio frequency power amplifier on the premise of not increasing the process cost of devices.
Further, the tolerance circuit comprises a clamping circuit, a first inductive device and a second inductive device, the clamping circuit is used for limiting the amplitude of the direct current voltage at two ends of the clamping circuit, the alternating current amplitude of the connection point of the first inductive device and the second inductive device is determined by the ratio of the two inductive devices, therefore, the maximum value of the alternating current voltage output by the output end of the amplifier can be adjusted by adjusting the ratio of the two inductive devices and the clamping voltage value of the clamping circuit, thereby limiting the maximum power of the amplifier, and enhancing the firmness of the amplifier.
Drawings
Fig. 1 is a circuit schematic diagram of a radio frequency power amplifier according to embodiment 1 of the present invention.
Fig. 2 is a circuit schematic diagram of a radio frequency power amplifier according to embodiment 2 of the present invention.
Fig. 3 is a circuit diagram of a radio frequency power amplifier according to embodiment 3 of the present invention.
Fig. 4 is a circuit diagram of a radio frequency power amplifier according to embodiment 4 of the present invention.
Fig. 5 is a circuit diagram of a radio frequency power amplifier according to embodiment 5 of the present invention.
Fig. 6 is a circuit diagram of a radio frequency power amplifier according to embodiment 6 of the present invention.
Fig. 7 is a circuit diagram of a radio frequency power amplifier according to embodiment 7 of the present invention.
Fig. 8 is a circuit diagram of a radio frequency power amplifier according to embodiment 8 of the present invention.
Detailed Description
The invention is further illustrated by the following examples, which are not intended to limit the scope of the invention.
Example 1
As shown in fig. 1, the present embodiment provides a radio frequency power amplifier, which includes a high frequency input terminal 1, a high frequency output terminal 2, a device bias circuit 3, a decoupling capacitor C, a front end matching circuit 4, an output matching circuit 5, and at least one stage of amplifier. The front-end matching circuit 4 and the output matching circuit 5 are optional, and may or may not include, and both of them are included in this embodiment. The signal of the radio frequency power amplifier enters a front end matching circuit 4 of the amplifier through a high frequency input end 1, is amplified by the amplifier and then is output to a high frequency output end 2 through an output matching circuit 5. The amplifier in this embodiment is implemented by a transistor T. The device biasing circuit 3 is used for realizing the biasing of the input end of the amplifier, namely the base electrode of the triode, and the decoupling capacitor C is connected between the working power supply VCC and the ground in series. The radio frequency power amplifier also comprises at least one tolerance circuit 6, and each tolerance circuit 6 is connected between the output end of one amplifier and a working power supply VCC in series; the tolerance circuit 6 is used to clamp the saturated output voltage and current of the corresponding amplifier. The output end of the amplifier is the collector of the triode T.
In this embodiment, the tolerance circuit 6 also provides dc current to the amplifier and impedance matching to the output of the amplifier.
In the present invention, the rf power amplifier may include a single-stage amplifier, or may include multiple-stage amplifiers, and one or more tolerance circuits for improving the robustness of the rf power amplifier may be provided, but the number of the tolerance circuits is less than or equal to the number of the amplifiers included in the rf power amplifier. Each stage of the amplifier may be provided with a tolerance circuit, or only a part of the amplifiers may be provided with a tolerance circuit. For example, in a specific implementation, the rf power amplifier includes two stages of amplifiers, namely a driving stage and an output stage, and a tolerance circuit is connected in series between an output terminal of the driving stage and the working power supply; and/or a tolerance circuit is connected between the output end of the output stage and the working power supply in series. In the present embodiment, only one stage of amplifier is taken as an example for description, and the number of stages of amplifiers and the number of tolerant circuits in the present embodiment limit the scope of the present invention. In addition, each stage of the amplifier in the rf power amplifier may be implemented by using a triode, or may also be implemented by using power devices of other processes, and each stage of the device of the multi-stage amplifier may also use different processes, such as CMOS (Complementary Metal Oxide Semiconductor), SOI (Silicon-On-Insulator, Silicon On Insulator), or SiGe (a process).
The embodiment provides a radio frequency power amplifier, and the robustness of the radio frequency power amplifier can be effectively improved on the premise of not increasing the process cost of a device by additionally arranging a tolerance circuit between the output end of the amplifier and a working power supply to clamp the saturated output voltage and current of the corresponding amplifier.
Example 2
As shown in fig. 2, the present embodiment is a further improvement on embodiment 1. Wherein the tolerant circuit 6 comprises a clamp circuit 601, a first inductive device Lt and a second inductive device Lb; the first inductive device Lt and the second inductive device Lb are connected in series between the output end Vo of the amplifier and the working power supply VCC; the first inductive device Lt is connected in parallel with the clamp circuit 601. One end of the first inductive device Lt is electrically connected to the second inductive device Lb. The other end of the first inductive device Lt is electrically connected to the operating power supply VCC.
In this embodiment, the first inductive device Lt and the second inductive device Lb may be inductors on a chip, or a part of inductors, or patch inductors, or chip leads, and the like, as long as there is an inductor, which is not limited in the present invention.
In this embodiment, the tolerant circuit 6 includes the clamp circuit 601, the first inductive device Lt and the second inductive device Lb, the clamp circuit 601 is used to limit the dc voltage amplitude at both ends thereof, and the ac amplitude of the connection point N between the first inductive device Lt and the second inductive device Lb is determined by the ratio of the two inductive devices, so that the maximum value of the ac voltage output by the output Vo of the amplifier can be adjusted by adjusting the ratio of the two inductive devices and the clamp voltage value of the clamp circuit 601, thereby limiting the maximum power of the amplifier, and thus enhancing the robustness thereof.
Example 3
As shown in fig. 3, this embodiment is a further improvement on embodiment 2. The clamping circuit is realized by a diode D, an anode of the diode D is connected with a working power supply VCC, and a cathode of the diode D and the second inductive device Lb are connected to a point N.
In this embodiment, in order to reduce the area and the cost, an optimal implementation manner is adopted, that is, the clamp circuit is implemented by only one diode D. The diode D may also be implemented by a triode circuit, specifically, a diode is used by short-circuiting a base and a collector of the triode. The specific choice of which device to implement the clamping circuit depends on the specific manufacturing process and application requirements, and the invention is not limited in this regard.
In this embodiment, no matter how high the voltage or current applied to the rf power amplifier is, the voltage amplitude across the first inductive device Lt is fixed by the clamping function of the diode D, so as to limit the maximum value of the ac voltage at the output Vo of the amplifier, thereby limiting the maximum power of the amplifier, and thus enhancing the robustness thereof.
Example 4
As shown in fig. 4, this embodiment provides a radio frequency power amplifier, which is different from embodiment 3 in that the direction of the diode is reversed, the cathode of the diode D is connected to the operating power source VCC, and the anode of the diode D is connected to the second inductive device Lb at the point N. Therefore, the direction of the diode D in the radio frequency power amplifier is not limited in the invention.
In this embodiment, no matter how high the voltage or current applied to the rf power amplifier is, the voltage amplitude across the first inductive device Lt is fixed by the clamping function of the diode D, so as to limit the maximum value of the ac voltage at the output Vo of the amplifier, thereby limiting the maximum power of the amplifier and thus enhancing the robustness thereof.
Example 5
As shown in fig. 5, this embodiment provides a radio frequency power amplifier, which is different from embodiment 4 in that the clamping circuit 601 is formed by connecting n diodes in series, which are respectively D1 … … Dn in fig. 5. In this embodiment, the maximum value of the ac voltage output from the output Vo of the amplifier is adjusted by adjusting the number of diodes connected, so that the maximum power of the amplifier is limited, thereby enhancing the robustness thereof.
Example 6
As shown in fig. 6, the present embodiment provides a radio frequency power amplifier, which is different from embodiment 3 in that the clamp circuit 601 is formed by connecting n diodes in series, which are D1 … … Dn in fig. 6 respectively. In this embodiment, the maximum value of the ac voltage output from the output Vo of the amplifier is adjusted by adjusting the number of diodes connected, so that the maximum power of the amplifier is limited, thereby enhancing the robustness thereof.
Example 7
As shown in fig. 7, the present embodiment provides a radio frequency power amplifier, which is different from embodiment 5 in that the positions of the clamping circuit 601 and the first inductor Lt are interchanged with the position of the second inductor Lb. This embodiment also enables the regulation of the maximum value of the alternating voltage output by the output Vo of the amplifier, thus limiting the maximum power of the amplifier and therefore increasing its robustness.
Example 8
As shown in fig. 8, this embodiment provides a radio frequency power amplifier, which is different from embodiment 5 in that the amplifier is implemented by using a field effect transistor M, and the output terminal of the amplifier is the drain of the field effect transistor M. This embodiment also enables the regulation of the maximum value of the alternating voltage output by the output Vo of the amplifier, thus limiting the maximum power of the amplifier and therefore increasing its robustness.
While specific embodiments of the invention have been described above, it will be appreciated by those skilled in the art that this is by way of example only, and that the scope of the invention is defined by the appended claims. Various changes and modifications to these embodiments may be made by those skilled in the art without departing from the spirit and scope of the invention, and these changes and modifications are within the scope of the invention.
Claims (12)
1. A radio frequency power amplifier comprising at least one stage of amplifier, characterized in that said radio frequency power amplifier further comprises at least one tolerance circuit, each of said tolerance circuits being connected in series between an output of one of said amplifiers and an operating power supply; the tolerance circuit is used for clamping the saturated output voltage and current of the corresponding amplifier.
2. The radio frequency power amplifier of claim 1, wherein the withstand circuit comprises a clamp circuit, a first inductive device, and a second inductive device; the first inductive device and the second inductive device are connected in series between the output end of the amplifier and the working power supply; the first inductive device and the clamping circuit are connected in parallel.
3. The radio frequency power amplifier of claim 2, wherein one end of the first inductive device is electrically connected to the second inductive device;
the other end of the first inductive device is electrically connected with the working power supply;
or, the other end of the first inductive device is electrically connected with the output end of the amplifier.
4. The radio frequency power amplifier of claim 2, wherein the clamping circuit includes at least one diode, and when the number of the diodes is plural, a plurality of the diodes are connected in series.
5. The radio frequency power amplifier of claim 4, wherein a direction of the diode in the radio frequency power amplifier is not limited.
6. The radio frequency power amplifier of claim 2, wherein the first inductive device is an on-chip inductor or a portion of the on-chip inductor or a patch inductor or a chip lead; the second inductive device is an inductor on a chip or a part of the inductor on the chip or a patch inductor or a chip lead.
7. The radio frequency power amplifier of claim 4, wherein the diode is implemented as a triode.
8. The rf power amplifier of claim 1, wherein the amplifier is a transistor and the output terminal is a collector of the transistor;
or, the amplifier is a field effect transistor, and the output end is a drain electrode of the field effect transistor.
9. The rf power amplifier of claim 1, wherein the rf power amplifier comprises two stages, namely a driver stage and an output stage, and the endurance circuit is connected in series between an output terminal of the driver stage and the operating power supply;
and/or the endurance circuit is connected between the output end of the output stage and the working power supply in series.
10. The radio frequency power amplifier of claim 1, wherein the radio frequency power amplifier further comprises a device bias circuit and a decoupling capacitance; the device biasing circuit is used for realizing the biasing of the input end of the amplifier, and the decoupling capacitor is connected between the working power supply and the ground in series.
11. The radio frequency power amplifier of claim 10, wherein the radio frequency power amplifier further comprises a high frequency input and a high frequency output;
the radio frequency power amplifier also comprises a front end matching circuit and/or an output matching circuit;
when the radio frequency power amplifier comprises the front end matching circuit, the front end matching circuit is connected between the high frequency input end and the input end of the amplifier in series;
when the radio frequency power amplifier includes the output matching circuit, the output matching circuit is connected in series between the output terminal of the amplifier and the high frequency output terminal.
12. The radio frequency power amplifier of claim 1, wherein the withstand circuit further provides a direct current to the amplifier; the withstand circuit also provides impedance matching for the output of the amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911395045.2A CN113131880A (en) | 2019-12-30 | 2019-12-30 | Radio frequency power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911395045.2A CN113131880A (en) | 2019-12-30 | 2019-12-30 | Radio frequency power amplifier |
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| Publication Number | Publication Date |
|---|---|
| CN113131880A true CN113131880A (en) | 2021-07-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911395045.2A Pending CN113131880A (en) | 2019-12-30 | 2019-12-30 | Radio frequency power amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114157252A (en) * | 2021-11-30 | 2022-03-08 | 深圳飞骧科技股份有限公司 | Power amplifying circuit and radio frequency signal processing method |
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2019
- 2019-12-30 CN CN201911395045.2A patent/CN113131880A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114157252A (en) * | 2021-11-30 | 2022-03-08 | 深圳飞骧科技股份有限公司 | Power amplifying circuit and radio frequency signal processing method |
| CN114157252B (en) * | 2021-11-30 | 2023-11-28 | 深圳飞骧科技股份有限公司 | Power amplifying circuit and radio frequency signal processing method |
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