CN113130701B - Thin-film solar cell forming equipment and preparation method - Google Patents
Thin-film solar cell forming equipment and preparation method Download PDFInfo
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- CN113130701B CN113130701B CN202110240764.8A CN202110240764A CN113130701B CN 113130701 B CN113130701 B CN 113130701B CN 202110240764 A CN202110240764 A CN 202110240764A CN 113130701 B CN113130701 B CN 113130701B
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides thin-film solar cell forming equipment which comprises a supporting structural member, a mold and a thermal field preparation device, wherein the mold is arranged on the supporting structural member, a mold cavity with an upward opening direction is arranged on the mold, the thermal field preparation device is arranged on the supporting structural member and is positioned right above the mold cavity, and the thermal field preparation device is used for controlling a three-dimensional thermal field in the mold cavity. The invention has simple structure and convenient processing, and can randomly change the surface shape and the curvature of the semi-finished product of the film component.
Description
Technical Field
The invention relates to the field of photovoltaics, in particular to thin-film solar cell forming equipment and a preparation method.
Background
With the development of society and the progress of science and technology, the demand of people on mobile energy is increasing. As is well known, solar energy is an extremely widely used energy source, and how to reasonably convert the solar energy into usable mobile energy, such as automobile roofs, is a trend. The surface curvature of the automobile roof is very complex, and the power generation material used by the traditional photovoltaic module is a silicon wafer material, so that the traditional photovoltaic module is crisp in texture and cannot be bent.
In the second generation photovoltaic cell technology represented by a thin film cell, a thin film cell component of a glass substrate is limited by a coating process, and a hyperboloid component cannot be manufactured.
Aiming at the problems in the prior art, the invention designs the thin film solar cell forming equipment and the preparation method which have simple structure and convenient processing and can randomly change the surface shape and curvature of the semi-finished product of the thin film component.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides thin film solar cell forming equipment and a preparation method, which have the advantages of simple structure and convenience in processing, and can be used for randomly changing the surface shape and curvature of a semi-finished product of a thin film assembly.
In a first aspect, the invention provides thin-film solar cell forming equipment, which comprises a supporting structural member, a mold and a thermal field preparation device, wherein the mold is arranged on the supporting structural member, a mold cavity with an upward opening direction is arranged on the mold, the thermal field preparation device is arranged on the supporting structural member and is positioned right above the mold cavity, and the thermal field preparation device is used for controlling a three-dimensional thermal field in the mold cavity.
In one embodiment, the thermal field preparation device comprises a heating point location integration base and a plurality of temperature-controllable heating assemblies, wherein the heating point location integration base is provided with a plurality of mounting holes, the temperature-controllable heating assemblies are correspondingly mounted in the mounting holes respectively, and the heating ends of the temperature-controllable heating assemblies face the die.
The beneficial effects of adopting the above embodiment are: the three-dimensional thermal field in the die cavity is changed by controlling the heating temperature of the temperature-controllable heating component.
In one embodiment, the temperature-controllable heating assembly comprises a heating module and a telescopic power part, the telescopic power part is installed in the installation hole, and the telescopic end of the telescopic power part is provided with the heating module.
The beneficial effects of adopting the above embodiment are: the distance between the heating module and the semi-finished film assembly is changed by controlling the telescopic distance of the telescopic power part, so that different thermal fields are generated for the semi-finished film assembly after film plating in the heating space, the purpose of locally controlling the softening rate of the glass substrate of the semi-finished film assembly is achieved, and the whole softening process is controlled.
In one embodiment, the thermal field preparation device further comprises a box body, and the mold and the thermal field preparation device are both arranged in the box body.
The beneficial effects of adopting the above embodiment are: the box body creates a closed environment for the die and the thermal field preparation device.
In one embodiment, a vacuum valve and an inert gas charging valve are disposed on the tank.
The beneficial effects of adopting the above embodiment are: used for vacuumizing and filling inert gas in the box body.
In one embodiment, a heating device is provided on the mold for heating the mold cavity.
The beneficial effects of adopting the above embodiment are: for heating in the mould cavity.
In one embodiment, the inner surface of the mold cavity is coated with a high temperature resistant soft material.
The beneficial effects of adopting the above embodiment are: the film coating surface of the semi-finished film assembly is prevented from being damaged.
In one embodiment, the power extension and retraction portion may be a micro-hydraulic cylinder.
The beneficial effects of adopting the above embodiment are: the work is stable and reliable.
In a second aspect, the invention further provides a thin film solar cell manufacturing method, which adopts the thin film solar cell forming equipment.
In one embodiment, the method comprises:
placing the film assembly semi-finished product after film coating into a mold cavity;
adjusting the temperature of each heating module and the distance from each heating module to a semi-finished film assembly according to the shape of the assembly required to be obtained, wherein the position with large deformation of the semi-finished film assembly is close to the heating module, and the position with small deformation of the semi-finished film assembly is far away from the heating module;
heating for a preset time, softening the semi-finished product of the film assembly, and tightly attaching the semi-finished product to the mold cavity under the action of gravity to form a shape consistent with the mold cavity;
and cooling to make the formed film assembly semi-finished product reach the room temperature.
The beneficial effects of adopting the above embodiment are: by changing the distance between the heating module and the semi-finished film assembly product, different thermal fields are generated for the semi-finished film assembly product after film plating in the heating space, so that the purpose of locally controlling the softening rate of the semi-finished film assembly product glass substrate is achieved, and the whole softening process is controlled.
Compared with the prior art, the invention has the advantages that:
(1) Simple structure, processing convenience can change film assembly semi-manufactured goods surface shape, camber wantonly.
(2) By changing the distance between the heating module and the semi-finished film assembly, different thermal fields are generated for the semi-finished film assembly after film plating in the heating space, so that the purpose of locally controlling the softening rate of the semi-finished glass substrate of the film assembly is achieved, and the whole softening process is controlled.
The technical features mentioned above can be combined in various suitable ways or replaced by equivalent technical features as long as the object of the invention can be achieved.
Drawings
The invention will be described in more detail hereinafter on the basis of embodiments and with reference to the accompanying drawings. Wherein:
FIG. 1 shows a structural view of a thin film solar cell forming apparatus;
fig. 2 shows a first state isometric view of a thin film solar cell forming apparatus;
figure 3 shows a second state isometric view of a thin film solar cell forming apparatus;
FIG. 4 shows a box structure view;
FIG. 5 shows a structural view of the support structure;
FIG. 6 shows a view of the mold structure;
FIG. 7 shows a block diagram of a hot spot header;
FIG. 8 is a view showing the construction of a thermal field producing apparatus;
FIG. 9 shows a block diagram of a temperature controllable heating assembly;
FIG. 10 shows a flow chart of a method for manufacturing a thin film solar cell;
in the drawings, like parts are given like reference numerals. The drawings are not to scale.
10-thin film solar cell forming equipment; 11-a support structure; 13-a mould; 15-a thermal field preparation device; 151-heating point position integrated base; 151 a-mounting holes; 153-temperature controllable heating component; 153 a-heating module; 153 b-a telescopic power section; 17-a mould cavity; 19-a box body; 21-a vacuum valve; 23-inert gas inflation valves; 25-semi-finished film assembly; 27-heating means.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
Example 1:
as shown in fig. 1 to 9, a thin film solar cell molding apparatus 10 includes a supporting structure 11, a mold 13, and a thermal field preparation device 15, wherein the mold 13 is disposed on the supporting structure 11, the mold 13 is provided with a mold cavity 17 having an upward opening, the thermal field preparation device 15 is disposed on the supporting structure 11 and located right above the mold cavity 17, and the thermal field preparation device 15 is configured to control a three-dimensional thermal field in the mold cavity 17.
Specifically, in the present embodiment, the thin-film solar cell forming apparatus 10 is used for curved surface forming of a thin-film solar cell of a glass substrate.
The supporting structural member 11 can be made of materials such as metal and ceramic, the supporting structural member 11 is of a frame structure, the bearing mold 13 and the thermal field preparation device 15 are horizontally arranged on the supporting structural member 11, the thermal field preparation device 15 is located right above the mold 13, and the supporting structural member 11 is used for bearing the mold 13 and the thermal field preparation device 15.
The mold 13 can be made of low-hardness metal, alloy and other materials, a mold cavity 17 with an upward opening direction is arranged on the mold 13, the bottom of the mold cavity 17 can be a female mold, a male mold, a wave-shaped or flat plate-shaped structure and the like, and the surface of the mold cavity 17 needs to be polished.
The inner surface of the die cavity 17 is covered with a high temperature resistant soft material, which includes but is not limited to materials such as a silica gel pad, an aramid cloth cover, and the like, and is used for preventing a film coating surface of the film component semi-finished product 25 after film coating from being damaged.
Wherein, thermal field preparation facilities 15 includes heating point position integration base 151 and a plurality of controllable temperature heating element 153, is provided with a plurality of mounting holes 151a on the heating point position integration base 151, and a plurality of controllable temperature heating element 153 correspond respectively and install in mounting hole 151a, and the heating end of controllable temperature heating element 153 is towards mould 13.
The temperature-controllable heating assembly 153 comprises a heating module 153a and a telescopic power part 153b, the telescopic power part 153b is installed in the installation hole 151a, and the telescopic end of the telescopic power part 153b is provided with the heating module 153a.
Specifically, in this embodiment, the heating point location integration base 151 is a horizontally disposed rectangular plate structure, and a plurality of mounting holes 151a penetrating through the heating point location integration base 151 are uniformly formed in the heating point location integration base 151.
The plurality of temperature-controllable heating components 153 are respectively and correspondingly installed in the installation holes 151a of the heating point location integrated base 151 one by one, wherein the telescopic power portions 153b include, but are not limited to, micro hydraulic cylinders, micro air cylinders, micro electromagnetic cylinders and the like, the fixed end of each telescopic power portion 153b is respectively fixed in the installation hole 151a corresponding to the fixed end, and the telescopic end of each telescopic power portion 153b is provided with a heating module 153a.
The structure can form a three-dimensional controllable thermal field with a large area and the distance between the heating module 153a and the film assembly semi-finished product 25 can be longitudinally adjusted, and the flexibility of the thermal field is utilized to adjust the heating rate and the heating temperature of each point of the glass substrate of the film assembly semi-finished product 25, so that the deformation quantity can be adjusted, and finally the target product can be manufactured.
The heating module 153a is preferably a resistance wire, which can be controlled in temperature by increasing or decreasing the current through it.
The temperature of each heating module 153a (i.e., the resistance wire) can be controlled independently, and the expansion length of each expansion power portion 153b can also be controlled independently.
By controlling the stretching distance of the different stretching power parts 153b, the distance between the different heating modules 151a and the film assembly semi-finished product 25 is changed (the place where the deformation amount of the film assembly semi-finished product 25 is large is close to the heating module 151a, and the place where the deformation amount of the film assembly semi-finished product 25 is small is far from the heating module 151 a), so that different thermal fields are generated in the heating space for the film assembly semi-finished product 25 after film plating, the purpose of locally controlling the softening rate of the glass substrate of the film assembly semi-finished product 25 is achieved, and the whole softening process is controlled.
In one embodiment, the resistance wire may also be connected to the telescopic end of the telescopic power portion 153b through a support rod, and the resistance wire can be moved toward the semi-finished film assembly 25 placed in the mold cavity 17 by the telescopic power portion 153 b.
The thin-film solar cell forming equipment 10 further comprises a box body 19, the mold 13 and the thermal field preparation device 15 are arranged in the box body 19, and a vacuum valve 21 and an inert gas inflation valve 23 are arranged on the box body 19.
Specifically, in this embodiment, the box 19 is made of a metal material, the box 19 is a closed box structure, the supporting structural member 11, the mold 13 and the thermal field preparation device 15 are all disposed in the box 19, and a vacuum valve 21 and an inert gas charging valve 23, which are communicated with the inside of the box 19, are disposed at the top of the box 19, and are used for vacuumizing and charging inert gas into the box 19.
Wherein, a heating device 27 is arranged on the mold 13, and the heating device 27 is used for heating the mold cavity 17.
Specifically, in this embodiment, at least one heating groove is disposed on the sidewall of the mold 13, a heating device 27 is disposed in the heating groove, and a plurality of heating devices 27 are uniformly disposed at the bottom of the mold 13.
In one embodiment, the heating device 27 may be a resistance wire.
Example 2:
as shown in fig. 10, a thin film solar cell manufacturing method, which is applied to the thin film solar cell forming apparatus 10 in the above-described embodiment 1, includes steps S110 to S140.
And step S110, placing the film assembly semi-finished product 25 after film coating into the mold cavity 17.
In step S120, the temperature of each heating module 153a and the distance from each heating module 153a to the film module semi-finished product 25 are adjusted according to the module shape to be obtained, wherein the part of the film module semi-finished product 25 with a large deformation is closer to the heating module 153a, and the part of the film module semi-finished product 25 with a small deformation is farther from the heating module 153a.
Step S130, heating for a preset time, softening the film assembly semi-finished product 25, and adhering to the mold cavity 17 under the action of gravity to form a shape consistent with the mold cavity 17.
And step S140, cooling is carried out, so that the formed film assembly semi-finished product 25 reaches the room temperature.
Specifically, in this embodiment, the film component semi-finished product 25 may be a copper indium gallium selenide component, a cadmium telluride component, or the like, and is prepared by a co-evaporation method, a magnetron sputtering method, or the like.
The shape of the assembly, including but not limited to concave, convex, undulating, or flat, is the same as the shape of the bottom of the mold cavity 17.
The temperature of each heating module 153a and the distance from each heating module 153a to the film module semi-finished product 25 are adjusted according to the structure of the module shape so that the place where the deformation amount of the film module semi-finished product 25 is large is close to the heating module 153a and the place where the deformation amount of the film module semi-finished product 25 is small is far from the heating module 153a.
The film assembly half-finished 25 glass substrate placed within mold cavity 17, after being softened by heating, will fall under gravity onto the bottom surface of mold cavity 17 and against the surface of mold cavity 17, forming a shape, curvature, conforming to the bottom of mold cavity 17.
And after the film assembly semi-finished product 25 is formed, cooling the glass substrate of the film assembly semi-finished product 25 to room temperature through a cooling process, and cooling and shaping the film assembly semi-finished product 25.
The thin-film solar cell forming equipment 10 and the thin-film solar cell preparation method greatly enrich application scenes of the photovoltaic module, particularly can replace the roof of a full-glass automobile, enable the automobile or equipment to be changed from an energy consumer to an energy producer, and greatly promote the development of mobile renewable energy.
Example 3:
on the basis of the embodiment 2, a thin film module semi-finished product 25 is obtained by a co-evaporation method, and the preparation of the curved surface thin film solar cell is completed, wherein the method comprises the following steps:
and step S210, unfolding the component shape curved surface into a plane by using software such as CATIA (computer-graphics aided three-dimensional Interactive application) according to the 3D model of the component shape curved surface.
And step S211, cutting the glass substrate (namely the glass substrate of the film assembly semi-finished product 25) by using a numerical control glass cutting machine according to the size of the plane.
And step S212, edging the cut glass substrate by using a numerical control edging machine.
And step S213, putting the edged glass substrate into a cleaning device, and cleaning.
Step S214, a layer of molybdenum is plated on the surface of the cleaned glass substrate by using PVD equipment to serve as a back electrode, and the thickness of the film layer is about 400nm.
And S215, scribing the molybdenum layer by using picosecond laser, completely scribing the molybdenum layer to leak out of the surface of the glass, and scribing the molybdenum layer to be 50-70 mu m in width.
And S216, depositing a CIGS layer on the molybdenum layer by using a co-evaporation device, wherein the thickness of the CIGS layer is about 1.5-2 mu m.
Step S217, on the basis of the thin film module semi-finished product 25 obtained in the above step, steps S110 to S140 are performed on the thin film solar cell forming apparatus 10.
And S218, depositing a CdS layer on the CIGS layer by using a chemical water bath deposition method, wherein the thickness of the CdS layer is about 50nm, thiourea, cadmium sulfate and ammonia water are used as raw materials and react in a water bath pool at the temperature of 80 ℃, the reaction time is about 150S, the glass substrate attached with the CdS film layer still needs to be subjected to post-cleaning and cooling processes, and the final temperature is room temperature.
Step S219, putting the semi-finished product 25 of the thin film assembly on a special fixture, and putting the semi-finished product into PVD equipment to plate an intrinsic zinc oxide layer.
Step S220, the semi-finished film assembly 25 is scribed to the molybdenum layer by using steel.
And step S221, placing the film assembly semi-finished product 25 on a special fixture, entering PVD equipment, and plating an aluminum-doped zinc oxide layer.
Step S222, the semi-finished film assembly 25 is scribed to the molybdenum layer by using steel.
Step S223, a drainage strip is attached to the semi-finished film assembly 25.
Step S224, preparing cover glass having the same curvature as the semi-finished film assembly 25, and packaging the two pieces of glass together through PVB, EVB, EVA, POE and other materials.
And step S225, attaching a wire box to the packaged assembly to manufacture a finished assembly.
Example 4:
a method for manufacturing a thin film solar cell, based on the above embodiment 2, by obtaining a thin film module semi-finished product 25 through a co-evaporation method, and completing the manufacturing of a curved thin film solar cell, the method further comprising:
and step S310, unfolding the component shape curved surface into a plane by using software such as CATIA (computer-graphics aided three-dimensional interactive application) according to the 3D model of the component shape curved surface.
And step S211, cutting the glass substrate (namely the glass substrate of the film assembly semi-finished product 25) by using a numerical control glass cutting machine according to the size of the plane.
And step S312, edging the cut glass substrate by using a numerical control edging machine.
And step 313, putting the edge-ground glass substrate into a cleaning device, and cleaning.
Step S314, plating a layer of molybdenum on the surface of the cleaned glass substrate by using PVD equipment to serve as a back electrode, wherein the thickness of the film layer is about 400nm.
And step S315, scribing the molybdenum layer by using picosecond laser, completely scribing the molybdenum layer, leaking out of the surface of the glass, and scribing the width of 50-70 mu m.
And step S316, depositing a CIGS layer on the molybdenum layer by using a co-evaporation device, wherein the thickness of the CIGS layer is about 1.5-2 mu m.
Step S317, depositing a CdS layer on the CIGS layer by using a chemical water bath deposition method, wherein the thickness of the CdS layer is about 50nm, thiourea, cadmium sulfate and ammonia water are used as raw materials and react in a water bath pool at the temperature of 80 ℃, the reaction time is about 150S, the glass substrate attached with the CdS film layer still needs to be subjected to post-cleaning and cooling processes, and the final temperature is room temperature.
And step S318, putting the semi-finished product 25 of the thin film assembly on a special clamp, and putting the semi-finished product into PVD equipment to plate an intrinsic zinc oxide layer.
Step S319, the semi-finished product 25 of the thin film assembly is scribed to the molybdenum layer by using steel.
Step S320, the semi-finished product 25 of the film assembly is placed on a special clamp and enters PVD equipment to be plated with the aluminum-doped zinc oxide layer.
Step S321, using steel to scribe the thin film assembly semi-finished product 25 to a molybdenum layer.
Step S322 is performed on the thin-film solar cell forming apparatus 10, based on the thin-film module semi-finished product 25 obtained in the above step, by performing steps S110 to S140.
Step S323, a drainage strip is attached to the film assembly semi-finished product 25.
Step S324, cover glass having the same curvature as the film assembly semi-finished product 25 is prepared by the thin film solar cell molding device 10, and the two pieces of glass are packaged together by materials such as PVB, EVB, EVA, POE, and the like.
And step 325, attaching a wire box to the packaged assembly to manufacture a finished assembly.
Example 5:
on the basis of the embodiment 2, a thin film module semi-finished product 25 is obtained through magnetron sputtering, and the preparation of the curved surface thin film solar cell is completed, wherein the method comprises the following steps:
and step S410, unfolding the component shape curved surface into a plane by using software such as CATIA (computer-graphics aided three-dimensional Interactive application) according to the 3D model of the component shape curved surface.
And step S411, cutting the glass substrate (namely the glass substrate of the film assembly semi-finished product 25) by using a numerical control glass cutting machine according to the size of the plane.
And step S412, edging the cut glass substrate by using a numerical control edging machine.
And step S413, putting the edged glass substrate into a cleaning device, and cleaning.
Step S414, plating a layer of molybdenum on the surface of the cleaned glass substrate by using PVD equipment to serve as a back electrode, wherein the thickness of the film layer is about 400nm.
And step S415, scribing the molybdenum layer by using picosecond laser, completely scribing the molybdenum layer, leaking out of the surface of the glass, and scribing the molybdenum layer to be 50-70 μm in width.
And S416, depositing a CIGS prefabricated layer on the molybdenum layer by using a magnetron sputtering device, wherein the thickness of the CIGS prefabricated layer is about 1.5-2 mu m.
And step S417, on the basis of the thin film assembly semi-finished product 25 obtained in the step, introducing a selenium atmosphere on the thin film solar cell forming equipment 10, and performing the steps S110 to S140 to complete a selenization process and process forming.
And S418, depositing a CdS layer on the CIGS layer by using a chemical water bath deposition method, wherein the thickness of the CdS layer is about 50nm, thiourea, cadmium sulfate and ammonia water are used as raw materials and react in a water bath pool at the temperature of 80 ℃, the reaction time is about 150S, the glass substrate attached with the CdS film layer still needs to be subjected to post-cleaning and cooling processes, and the final temperature is room temperature.
And step S419, putting the semi-finished product 25 of the thin film assembly on a special clamp, putting the semi-finished product into PVD equipment, and plating an intrinsic zinc oxide layer.
Step S420, the semi-finished thin film assembly 25 is scribed to the molybdenum layer by using steel.
And step S421, placing the semi-finished product 25 of the film assembly on a special fixture, entering PVD equipment, and plating an aluminum-doped zinc oxide layer.
Step S422, the semi-finished film assembly 25 is scribed to the molybdenum layer using steel.
Step S423, attaching a drainage strip to the film assembly semi-finished product 25.
Step S424, preparing cover glass having the same curvature as the film assembly semi-finished product 25, and encapsulating the two pieces of glass together by using materials such as PVB, EVB, EVA, and the like.
And step S425, attaching a wire box to the packaged assembly to manufacture a finished assembly.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "bottom", "top", "front", "back", "inner", "outer", "left", "right", and the like, are used in the orientations and positional relationships indicated in the drawings, which are based on the orientations and positional relationships indicated in the drawings, and are used for convenience of description and simplicity of description, but do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that various dependent claims and the features described herein may be combined in ways different from those described in the original claims. It is also to be understood that features described in connection with individual embodiments may be used in other described embodiments.
Claims (8)
1. A thin film solar cell forming apparatus, comprising:
a support structure;
the mould is arranged on the supporting structural part, and a mould cavity with an upward opening direction is arranged on the mould; and
the thermal field preparation device is arranged on the supporting structural part and is positioned right above the mold cavity, and the thermal field preparation device is used for controlling a three-dimensional thermal field in the mold cavity;
the thermal field preparation device comprises:
the heating point position integration seat is provided with a plurality of mounting holes; and
the temperature-controllable heating assemblies are respectively and correspondingly arranged in the mounting holes, and the heating ends of the temperature-controllable heating assemblies face the die;
the temperature-controllable heating assembly includes:
a heating module; and
the telescopic power part is installed in the mounting hole, and a heating module is arranged at the telescopic end of the telescopic power part.
2. The thin-film solar cell forming apparatus according to claim 1, further comprising a box, wherein the mold and the thermal field preparation device are both disposed in the box.
3. The thin-film solar cell forming equipment as claimed in claim 2, wherein the box body is provided with a vacuum valve and an inert gas charging valve.
4. The thin film solar cell forming apparatus of claim 1, wherein the mold is provided with a heating device for heating the mold cavity.
5. The thin-film solar cell forming apparatus according to claim 1, wherein the inner surface of the mold cavity is covered with a high temperature resistant soft material.
6. The thin film solar cell forming apparatus of claim 1, wherein the telescopic power unit is a micro hydraulic cylinder.
7. A method for manufacturing a thin film solar cell, characterized in that it employs the thin film solar cell forming apparatus according to any one of claims 1 to 6.
8. The method for manufacturing a thin film solar cell according to claim 7, wherein the method comprises:
placing the film assembly semi-finished product after film coating into a mold cavity;
adjusting the temperature of each heating module and the distance from each heating module to a semi-finished film assembly according to the shape of the assembly required to be obtained, wherein the part with large deformation of the semi-finished film assembly is close to the heating module, and the part with small deformation of the semi-finished film assembly is far away from the heating module;
heating for a preset time, softening the semi-finished film assembly, and tightly attaching to the mold cavity under the action of gravity to form a shape consistent with the mold cavity;
and cooling to make the formed film assembly semi-finished product reach the room temperature.
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002083992A (en) * | 2000-09-07 | 2002-03-22 | Nissan Motor Co Ltd | Solar cell panel and its manufacturing method |
| JP2002231990A (en) * | 2001-02-06 | 2002-08-16 | Nissan Motor Co Ltd | Solar battery panel |
| CN201853718U (en) * | 2010-11-11 | 2011-06-01 | 河北东旭投资集团有限公司 | Curved-surface thin film solar cell, assorted substrate heating plate and assorted current sharing plate |
| CN102285064A (en) * | 2010-06-21 | 2011-12-21 | 深圳富泰宏精密工业有限公司 | Preforming method of decorative film and heating device used in same |
| CN104916722A (en) * | 2015-06-02 | 2015-09-16 | 宁波山迪光能技术有限公司 | Curved surface solar energy automobile skylight and manufacture method for the same |
| KR20160126947A (en) * | 2016-10-21 | 2016-11-02 | 전영권 | Method for manufacturing flexible substrate for sollar cell and sollar cell |
| CN108511547A (en) * | 2018-06-12 | 2018-09-07 | 汉能移动能源控股集团有限公司 | Solar module, preparation method thereof and solar device |
| CN208819904U (en) * | 2018-08-29 | 2019-05-03 | 汉能移动能源控股集团有限公司 | Hot pressing die for solar cell module |
| WO2019223786A1 (en) * | 2018-05-25 | 2019-11-28 | 米亚索乐装备集成（福建）有限公司 | Heating device and electrode fabricating apparatus for semi-finished photovoltaic battery |
| CN110783419A (en) * | 2018-07-12 | 2020-02-11 | 北京铂阳顶荣光伏科技有限公司 | Curved surface photovoltaic module and preparation method thereof |
| CN111370529A (en) * | 2018-12-26 | 2020-07-03 | 汉能移动能源控股集团有限公司 | Preparation method of curved solar module and curved solar module |
-
2021
- 2021-03-04 CN CN202110240764.8A patent/CN113130701B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002083992A (en) * | 2000-09-07 | 2002-03-22 | Nissan Motor Co Ltd | Solar cell panel and its manufacturing method |
| JP2002231990A (en) * | 2001-02-06 | 2002-08-16 | Nissan Motor Co Ltd | Solar battery panel |
| CN102285064A (en) * | 2010-06-21 | 2011-12-21 | 深圳富泰宏精密工业有限公司 | Preforming method of decorative film and heating device used in same |
| CN201853718U (en) * | 2010-11-11 | 2011-06-01 | 河北东旭投资集团有限公司 | Curved-surface thin film solar cell, assorted substrate heating plate and assorted current sharing plate |
| CN104916722A (en) * | 2015-06-02 | 2015-09-16 | 宁波山迪光能技术有限公司 | Curved surface solar energy automobile skylight and manufacture method for the same |
| KR20160126947A (en) * | 2016-10-21 | 2016-11-02 | 전영권 | Method for manufacturing flexible substrate for sollar cell and sollar cell |
| WO2019223786A1 (en) * | 2018-05-25 | 2019-11-28 | 米亚索乐装备集成（福建）有限公司 | Heating device and electrode fabricating apparatus for semi-finished photovoltaic battery |
| CN108511547A (en) * | 2018-06-12 | 2018-09-07 | 汉能移动能源控股集团有限公司 | Solar module, preparation method thereof and solar device |
| CN110783419A (en) * | 2018-07-12 | 2020-02-11 | 北京铂阳顶荣光伏科技有限公司 | Curved surface photovoltaic module and preparation method thereof |
| CN208819904U (en) * | 2018-08-29 | 2019-05-03 | 汉能移动能源控股集团有限公司 | Hot pressing die for solar cell module |
| CN111370529A (en) * | 2018-12-26 | 2020-07-03 | 汉能移动能源控股集团有限公司 | Preparation method of curved solar module and curved solar module |
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