CN113130682B - Semiconductor infrared detector containing modulation doping local electric field and regulation and control method thereof - Google Patents
Semiconductor infrared detector containing modulation doping local electric field and regulation and control method thereof Download PDFInfo
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Abstract
The present invention provides a semiconductor infrared detector containing a modulated doped local electric field and a regulation and control method thereof, wherein the detector comprises: a substrate; and a lower electrode layer, a multiple quantum well active layer and an upper electrode layer sequentially formed on the substrate from bottom to top. The multi-quantum well active layer comprises a plurality of barrier layers and potential well layers which are alternately stacked, wherein at least one barrier layer and/or potential well layer is a modulation doping layer, so that a local electric field for regulating and controlling the electronic energy state is formed. By introducing the modulation doping layer into the multi-quantum well active layer, a hole or an electron carrier can be spatially and correspondingly separated from a negative ion real ion and a positive ion real ion based on the introduction of the modulation doping layer, so that a stronger local electric field is formed in the quantum well, and then the regulation and control of the electron energy state in the quantum well are realized based on the local electric field, so that the extraction efficiency of photoelectrons in the quantum well is improved, and the overall efficiency of the infrared detector is improved.
Description
Technical Field
The disclosure belongs to the technical field of detectors, and relates to a semiconductor infrared detector containing a modulation-doping local electric field and a regulation and control method thereof.
Background
An infrared detector is an important device for detecting infrared radiation with a wavelength of more than 2 microns. Semiconductor low-dimensional structure materials represented by quantum wells have excellent physical properties, and are widely applied to infrared detection devices.
At present, the infrared photoelectric detection process of a low-dimensional semiconductor quantum system is based on interband transition and interband transition, and according to the existing semiconductor physical principle, after a low-dimensional semiconductor infrared detector absorbs photons to generate carriers, the photogenerated carriers cannot escape from a potential well completely and quickly due to the quantum restriction, and part of the photogenerated carriers relax to the ground state. These can lead to the problem of low light absorption and photo-generated carrier extraction efficiency of the infrared detector producing the quantum well material, and limit further improvement of the performance of the infrared detector made of the quantum well material.
Disclosure of Invention
Technical problem to be solved
The invention provides a semiconductor infrared detector containing a modulation-doping local electric field and a regulation and control method thereof, which at least partially solve the problem that the detection efficiency of a device is low because photo-generated electrons cannot effectively overflow a quantum well due to quantum restriction in a semiconductor quantum well infrared detector in the related technology.
(II) technical scheme
One aspect of the present disclosure provides a semiconductor infrared detector incorporating a modulated doped local electric field. The semiconductor infrared detector comprises: a substrate; and a lower electrode layer, a multiple quantum well active layer and an upper electrode layer sequentially formed on the substrate from bottom to top. The multi-quantum well active layer comprises a plurality of barrier layers and potential well layers which are alternately stacked, wherein at least one barrier layer and/or potential well layer is a modulation doping layer, so that a local electric field for regulating and controlling the electronic energy state is formed.
According to an embodiment of the present disclosure, the doping type of the modulation doping layer is n-type or p-type; when the modulation doping layer is positioned in the potential well layer in the multi-quantum well active layer, the doping type of the modulation doping layer is p-type; when the modulation doping layer is located on the barrier layer in the multiple quantum well active layer, the doping type of the modulation doping layer is n-type.
According to an embodiment of the present disclosure, the doping concentration of the modulation doping layer is: 1 x 10 16 cm -3 ～1×10 21 cm -3 。
According to the embodiment of the present disclosure, the well layer and the barrier layer in the multi-quantum well active layer except for the modulation doping layer are undoped or doped, wherein the doping type of the well layer is n-type, and the doping type of the barrier layer is p-type.
According to an embodiment of the present disclosure, the doping concentration of the doped well layer or barrier layer in the multi-quantum well active layer except for the modulation doping layer is: 1X 10 16 cm -3 ～1×10 21 cm -3 。
According to an embodiment of the present disclosure, the pair of heterojunctions of the multiple quantum well active layer is at least 2 pairs.
According to an embodiment of the present disclosure, the material of the multiple quantum well active layer includes one of gallium arsenide, aluminum arsenide, indium phosphide, aluminum phosphide, gallium nitride, indium nitride, and aluminum nitride, or a ternary or quaternary compound of gallium arsenide, aluminum arsenide, indium phosphide, aluminum phosphide, gallium nitride, indium nitride, and aluminum nitride.
According to the embodiment of the present disclosure, the thickness of the barrier layer in the multi-quantum well active layer is 0.1nm to 20nm, and the thickness of the potential well layer is 0.1nm to 20mn.
According to the embodiment of the disclosure, the semiconductor infrared detector works under an external bias voltage or under a zero bias voltage.
Another aspect of the disclosure provides a method for performance control based on the semiconductor infrared detector. The method comprises the following steps: at least one of the direction, the strength and the position of the local electric field is correspondingly regulated and controlled by regulating and controlling at least one of the doping type, the doping concentration and the doping position of the modulation doping layer, so that the regulation and control of the electronic energy state are realized, the extraction efficiency of photo-generated electrons is improved, and the efficiency of the semiconductor infrared detector is improved.
(III) advantageous effects
According to the technical scheme, the semiconductor infrared detector containing the modulated and doped local electric field and the regulation and control method thereof have the following beneficial effects:
(1) By introducing the modulation doping layer into the multi-quantum well active layer, current carriers (such as holes and electrons) can be separated from a parent body (corresponding to negative ion real and positive ion real) in space based on the introduction of the modulation doping layer, so that a strong local electric field is formed in the quantum well, the regulation and control of the electronic energy state in the quantum well are realized based on the local electric field, the extraction efficiency of photogenerated electrons in the quantum well is improved, and the overall efficiency of the infrared detector is improved.
(2) A strong local electric field is introduced by setting a modulation doping layer, and the direction, the strength and the position of the local electric field are correspondingly controlled by controlling the type, the concentration and the position of the modulation doping layer; and further, the quantum energy state of the semiconductor low-dimensional structure is regulated and controlled, and the extraction efficiency of photon-generated carriers is improved, so that the regulation and control limits of the traditional semiconductor low-dimensional structure material on light absorption and extraction efficiency are broken through.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor infrared detector including a modulated doped local electric field according to an embodiment of the present disclosure.
Fig. 2 to 4 are different examples of the number and positions of modulation doped layers in a multiple quantum well active layer according to an embodiment of the present disclosure.
Fig. 5 is a specific structural example of a multiple quantum well active layer in a semiconductor infrared detector according to an embodiment of the present disclosure.
Fig. 6 is a gamma (Γ) conduction band profile and a space charge density profile of the multiple quantum well active layer shown in fig. 5.
Fig. 7 is a diagram of an electric field distribution of the multiple quantum well active layer shown in fig. 5.
Fig. 8 is a diagram of an energy level structure of a multiple quantum well active layer shown in fig. 5.
Fig. 9 is a graph showing an electron wave function distribution of the multiple quantum well active layer shown in fig. 5.
[ notation ] to show
1-semiconductor infrared detector;
11-a substrate;
12-a lower electrode layer;
13-a multiple quantum well active layer;
131a,132a,133a,134a,135a,136a,137a, 138a-barrier layers;
131b,132b,133b,134b,135b,136b, 137b-well layers;
14-upper electrode layer;
15-a first supply electrode;
16-a second supply electrode;
17-power supply.
Detailed Description
The invention provides a semiconductor infrared detector containing a modulation doping local electric field and a regulation and control method thereof.A modulation doping layer is introduced into a multi-quantum well active layer, and current carriers (such as holes and electrons) can be separated from a parent body (corresponding to negative ions and positive ions) in space based on the introduction of the modulation doping layer, so that a stronger local electric field is formed in a quantum well, and then the regulation and control of the electronic energy state in the quantum well is realized based on the local electric field, so that the extraction efficiency of photo-generated electrons in the quantum well is improved, and the overall efficiency of the infrared detector is improved.
To make the objects, technical solutions and advantages of the present disclosure more apparent, the present disclosure will be described in further detail below with reference to specific embodiments and the accompanying drawings.
A first exemplary embodiment of the present disclosure provides a semiconductor infrared detector incorporating a modulated doped local electric field.
Fig. 1 is a schematic structural diagram of a semiconductor infrared detector including a modulated doped local electric field according to an embodiment of the present disclosure.
Referring to fig. 1, a semiconductor infrared detector 1 including a modulated and doped local electric field according to an embodiment of the present disclosure includes: a substrate 11; and a lower electrode layer 12, a multiple quantum well active layer 13, and an upper electrode layer 14 formed on the substrate 11 in this order from bottom to top. The multi-quantum well active layer 13 includes a plurality of barrier layers and well layers stacked alternately, wherein at least one of the barrier layers and/or the well layers is a modulation doping layer, thereby forming a local electric field for adjusting and controlling an electron energy state.
In the disclosure, the stacking sequence of the barrier layer and the well layer and the number of the barrier layer and the well layer can be flexibly set according to the setting requirements of different energy band structures, the number of the barrier layer and the number of the well layer can be equal, and the difference between the number of the barrier layer and the number of the well layer can also be a relation.
In the embodiment illustrated in fig. 1, a plurality of alternately stacked barrier layers and well layers exemplify a stacked layer pair of three barrier layers and well layers, and in this embodiment, the multiple quantum well active layer 13 includes, from bottom to top: barrier layer 131a, well layer 131b, barrier layer 132a, well layer 132b, barrier layer 133a, and well layer 133b.
The position of the modulation doping layer in the multiple quantum well active layer 13 is not limited in this disclosure, and the modulation doping layer may be any barrier layer or well layer in the multiple quantum well active layer, or any combination of barrier layer and well layer. Referring to fig. 1, the well layer 132b is exemplified as a modulation doped layer in the present embodiment. In the drawings of the present disclosure, the modulation doping layer is schematically filled with oblique lines.
According to the embodiment of the present disclosure, the number of the heterojunction pairs of the multiple quantum well active layers is at least 2 pairs, and the maximum number is not limited.
Fig. 2 to 4 are different examples of the number and positions of modulation doped layers in a multiple quantum well active layer according to an embodiment of the present disclosure.
The number of modulation doping layers in the multiple quantum well active layer 13 and whether the modulation doping layers are located at the barrier layer or the well layer are not limited in this disclosure.
Referring to fig. 2, in an embodiment, the multiple quantum well active layer 13 includes, from bottom to top: barrier layer 131a, well layer 131b, barrier layer 132a, well layer 132b, barrier layer 133a, well layer 133b, barrier layer 134a, and well layer 134b, with barrier layer 132a being the modulation doped layer in this embodiment as an example.
Referring to fig. 3, in another embodiment, the multiple quantum well active layer 13 includes, from bottom to top: the barrier layer 131a, the well layer 131b, the barrier layer 132a, the well layer 132b, the barrier layer 133a, the well layer 133b, the barrier layer 134a, and the well layer 134b, in this embodiment, the well layer 133b is taken as an example of a modulation doped layer.
Referring to fig. 4, in still another embodiment, the multiple quantum well active layer 13 includes, from bottom to top: the barrier layer 131a, the well layer 131b, the barrier layer 132a, the well layer 132b, the barrier layer 133a, the well layer 133b, the barrier layer 134a, and the well layer 134b, and in this embodiment, the barrier layer 132a and the well layer 133b are all modulation-doped layers as an example.
In the present disclosure, the doping type of the modulation doped layer is n-type or p-type. When the modulation doping layer is positioned in the potential well layer in the multi-quantum well active layer, the doping type of the modulation doping layer is p-type. When the modulation doping layer is located on the barrier layer in the multiple quantum well active layer, the doping type of the modulation doping layer is n-type. The doping type in the modulation doping layer is related to the relative height of the electronic potential energy of the position of the energy band, and modulation doping is realized based on the relative height of the electronic potential energy, so that the carriers of the modulation doping and positive and negative ion real bodies can be separated spatially, and a local electric field is generated.
In the embodiment of the present disclosure, the infrared detector operates under an external bias or a zero bias.
In this embodiment, the upper electrode layer 14 is one of n-type doped and p-type doped, and the lower electrode layer 12 is one of n-type doped and p-type doped. When the doping types of the upper electrode layer 14 and the lower electrode layer 12 are the same, the external power supply 17 is not required, which corresponds to the case where the infrared detector operates at zero bias.
In the embodiment illustrated in fig. 1, the doping types of the upper electrode layer 14 and the lower electrode layer 12 are different, and an external power supply 17 is required to provide a voltage to flatten the pn junction energy band formed by the upper and lower electrode layers, which corresponds to the case where the infrared detector operates under an external bias. Therefore, a first power feeding electrode 15 is further provided on the upper electrode layer 14, a second power feeding electrode 16 is further provided on the lower electrode layer 12, the first power feeding electrode 15 is further provided on the upper electrode layer 14, the second power feeding electrode 16 is further provided on the lower electrode layer 12, and the first power feeding electrode 15 and the second power feeding electrode 16 are connected by an external power supply 17. For example, the upper electrode layer 14 and the lower electrode layer 12 are p-type doped and n-type doped GaAs, respectively.
In an embodiment of the present disclosure, the doping concentration of the modulation doping layer is: 1X 10 16 cm -3 ～1×10 21 cm -3 For example, in an embodiment, the doping concentration of the modulation doping layer is: 1X 10 20 cm -3 。
In an embodiment of the disclosure, the well layer and the barrier layer in the multi-quantum well active layer except for the modulation doping layer are undoped or doped, wherein the doping type in the well layer is n-type, and the doping type in the barrier layer is p-type. In this disclosure, the doping in the barrier layer and the well layer is distinguished from the doping in the modulation doped layer.
According to an embodiment of the present disclosure, aThe doping concentration of the well layer or the barrier layer having doping other than the modulation doping layer in the multiple quantum well active layer 13 is: 1X 10 16 cm -3 ～1×10 21 cm -3 。
According to the embodiment of the present disclosure, the material of the multiple quantum well active layer includes, but is not limited to, one of gallium arsenide, aluminum arsenide, indium phosphide, aluminum phosphide, gallium nitride, indium nitride, and aluminum nitride, or a ternary or quaternary compound composed of gallium arsenide, aluminum arsenide, indium phosphide, aluminum phosphide, gallium nitride, indium nitride, and aluminum nitride.
According to the embodiment of the present disclosure, the thickness of the barrier layer in the above-described multiple quantum well active layer 13 is 0.1nm to 20nm, and the thickness of the potential well layer is 0.1nm to 20nm.
The principle of introducing the modulation doping layer to regulate the electronic energy state and further improve the efficiency of the semiconductor infrared detector according to the embodiment of the present disclosure is described below with reference to fig. 5 to 9.
Fig. 5 is a specific structural example of a multiple quantum well active layer in a semiconductor infrared detector according to an embodiment of the present disclosure. Fig. 6 is a gamma (Γ) conduction band profile and a space charge density profile of the multiple quantum well active layer shown in fig. 5. Fig. 7 is a diagram of an electric field distribution of the multiple quantum well active layer shown in fig. 5. Fig. 8 is a diagram of an energy level structure of a multiple quantum well active layer shown in fig. 5. Fig. 9 is a graph showing an electron wave function distribution of the multiple quantum well active layer shown in fig. 5.
Referring to fig. 5, in the present embodiment, the multiple quantum well active layer 13 includes, from bottom to top: barrier layer 131a, well layer 131b, barrier layer 132a, well layer 132b, barrier layer 133a, well layer 133b, barrier layer 134a, well layer 134b, barrier layer 135a, well layer 135b, barrier layer 136a, well layer 136b, barrier layer 137a, well layer 137b, and barrier layer 138a. Wherein the barrier layers 131a,132a,133a,134a,135a,136a and 138a are made of Al 0.38 Ga 0.62 As, none of them was doped. The barrier layer 137a is a modulation doping layer made of Al 0.38 Ga 0.62 As, dopingN-type, and doping concentration of 2 × 10 18 cm -3 . Well layers 131b,132b,133b,134b,135b, and 136b are made of GaAs and are undoped, and all serve as transport wells. The well layer 137b is used as a well and is made of In 0.28 Ga 0.72 As with doping type of n type and doping concentration of 1 × 10 18 cm -3 。
When the modulation doping layer is a barrier layer, for example, as shown in fig. 2 or fig. 5, the doping species needs to be n-type doping, and the potential of the barrier layer and the potential of the well layer are relatively high and low for electrons: the potential of the barrier layer is relatively high, and the potential of the potential well layer is relatively low, so that electrons of the doped donor can be transferred to the surrounding potential well layer due to the action of the band potential difference (the band potential difference from the barrier layer to the potential well layer), and positive ions are left in the barrier layer serving as the modulation doping layer, so that a locally enhanced electric field is generated near the modulation doping layer.
Similarly, when the modulation doped layer is a well layer, as shown in fig. 3, the doping type needs to be p-type doping, and for holes, the potential of the barrier layer and the well layer is relatively high or low as follows: the potential energy of the barrier layer is relatively lower, the potential energy of the potential well layer is relatively higher, holes of the doped acceptor can be transferred to the surrounding barrier layer due to the action of the potential difference of the energy band (the potential difference of the energy band pointing to the barrier layer from the potential well layer), and the potential well layer serving as the modulation doping layer is reserved with the ion real with negative charges, so that a locally enhanced electric field is generated near the modulation doping layer.
In other words, when the doping type is p-type doping, the modulation doping layer is a potential well layer, and at this time, the holes will escape from the potential well and leave negative ions, thereby generating a local electric field; when the doping type is n-type doping, the modulation doping layer is a barrier layer, electrons can escape from the barrier and leave positive ions to generate a local electric field, and the directions of the electric fields generated by the positive ions and the negative ions are different, so that the direction of the local electric field can be controlled by controlling the type of modulation doping. The doping concentration is correlated with the ion concentration, so that the doping concentration affects the strength of the local electric field. Because the electric field is localized near the modulation doped layer, the location of the doping affects the location of the localized electric field.
The result of the space charge distribution of the structure shown in fig. 5 can be calculated according to the schrodinger-poisson equation set, and referring to fig. 6, the direction z of a local electric field is illustrated by using an arrow, wherein the coordinate axis on the left corresponding to the solid line is the conduction band distribution of the multiple quantum well active layer gamma (gamma); the coordinate axis on the right corresponding to the dotted line is the space charge density distribution of the multi-quantum well active layer, the positive value represents positive charge, and the negative value represents negative charge. From the result of calculating the electric field distribution from the poisson equation, referring to fig. 7, it can be seen that the doping concentration is modulated to 1 × 10 in the barrier layer 18 cm -3 That is, the corresponding modulation doping layer is located at the position of the barrier layer 137a, the doping type thereof is n-type, and the doping concentration is 1 × 10 18 cm -3 The maximum value of the electric field intensity can be obtained to be 10 6 And the electric field is in the order of V/m and is locally close to the modulation doped layer.
Referring to fig. 5 to 9, in the example shown in fig. 5, the energy level E2 is the absorption well excited state, and the energy level E3 is the first transport well ground state. The scattering rate of electrons from E2 to E3 is changed by regulating and controlling the relative positions of the energy levels E2 and E3 and the overlapping condition of the electron wave functions corresponding to the energy levels E2 and E3 by the local electric field, and the scattering rate can influence the extraction efficiency of photo-generated electrons. Therefore, the scattering rate of electrons from the energy level E2 to the energy level E3 can be increased by constructing a proper local electric field, so that the extraction efficiency of photo-generated electrons is improved, and finally, the light absorption and extraction efficiency of the semiconductor infrared detector are improved.
Based on the technical concept, a second exemplary embodiment of the present disclosure provides a method for performance control based on the semiconductor infrared detector. The method comprises the following steps: at least one of the direction, the strength and the position of the local electric field is correspondingly regulated and controlled by regulating and controlling at least one of the doping type, the doping concentration and the doping position of the modulation doping layer, so that the regulation and control of the electronic energy state are realized, the extraction efficiency of photo-generated electrons is improved, and the efficiency of the semiconductor infrared detector is improved.
In the related art, the quantum well or the superlattice structure is a semiconductor low-dimensional material, and the means for regulating and controlling the performance of the semiconductor low-dimensional material usually adopts the regulation and control of the thickness of a potential well barrier and the material composition, which is limited by the size of the structure, and the thickness of the potential well barrier and the amplitude of the material composition which can be regulated and controlled are limited.
The strong local electric field is introduced by setting the modulation doping layer, so that the direction, the strength and the position of the local electric field can be correspondingly controlled by controlling the type, the concentration and the position of the modulation doping layer, the quantum energy state of a semiconductor low-dimensional structure is regulated, the extraction efficiency of photon-generated carriers is improved, and the regulation and control limitation of the traditional semiconductor low-dimensional structure material on light absorption and extraction efficiency is broken through.
In summary, embodiments of the present disclosure provide a semiconductor infrared detector including a modulation-doping local electric field and a control method thereof, in which a modulation-doping layer is introduced into a multiple quantum well active layer, and carriers (for example, holes and electrons) can be spatially separated from a matrix (corresponding to negative ion real and positive ion real) based on the introduction of the modulation-doping layer, so that a strong local electric field is formed in a quantum well, and then the control of an electron energy state in the quantum well is realized based on the local electric field, so as to improve the extraction efficiency of photoelectrons in the quantum well, thereby improving the overall efficiency of the infrared detector. Correspondingly controlling the direction, the strength and the position of the local electric field by controlling the type, the concentration and the position of the modulation doping layer; and further, the quantum energy state of the semiconductor low-dimensional structure is regulated and controlled, and the extraction efficiency of photon-generated carriers is improved, so that the regulation and control limits of the traditional semiconductor low-dimensional structure material on light absorption and extraction efficiency are broken through.
It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
Unless otherwise defined, the same reference numerals in the embodiments of the present disclosure and the drawings denote the same meanings. In the drawings used to describe embodiments of the present disclosure, the thickness of a layer or region is exaggerated for clarity; also, in the drawings of some embodiments of the present disclosure, only the structures related to the concept of the present disclosure are shown, and other structures may refer to general designs. In addition, some drawings only illustrate the basic structure of the embodiments of the present disclosure, and the detailed parts are omitted.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, is intended in an open-ended sense, and does not exclude the presence of other elements, components, portions or items than those listed. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
Unless a technical obstacle or contradiction exists, the above-described various embodiments of the present disclosure may be freely combined to form further embodiments, which are all within the scope of protection of the present disclosure.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (9)
1. A semiconductor infrared detector incorporating a modulated doped local electric field, comprising:
a substrate; and
a lower electrode layer, a multiple quantum well active layer and an upper electrode layer sequentially formed on the substrate from bottom to top;
the multi-quantum well active layer comprises a plurality of barrier layers and potential well layers which are alternately stacked, wherein at least one barrier layer and/or potential well layer is a modulation doping layer, so that a local electric field for regulating and controlling the electronic energy state is formed; the doping type of the modulation doping layer is n type or p type; when the modulation doping layer is positioned in a potential well layer in the multi-quantum well active layer, the doping type of the modulation doping layer is p-type; and when the modulation doping layer is positioned on the barrier layer in the multi-quantum well active layer, the doping type of the modulation doping layer is n-type.
2. The semiconductor infrared detector of claim 1, characterized in that of the modulation doped layerThe doping concentration is as follows: 1X 10 16 cm -3 ～1×10 21 cm -3 。
3. The semiconductor infrared detector according to claim 1, characterized in that the well layer and the barrier layer in the multiple quantum well active layer except the modulation doped layer are undoped or doped, wherein the doping type in the well layer is n-type and the doping type in the barrier layer is p-type.
4. The semiconductor infrared detector according to claim 3, characterized in that the doping concentration of the doped well layer or barrier layer other than the modulation doping layer in the multiple quantum well active layer is: 1X 10 16 cm -3 ～1×10 21 cm -3 。
5. The semiconductor infrared detector according to claim 1, characterized in that the heterojunction pair of the multiple quantum well active layers is at least 2 pairs.
6. The semiconductor infrared detector according to claim 1, wherein the material of the multiple quantum well active layer comprises one of gallium arsenide, aluminum arsenide, indium phosphide, aluminum phosphide, gallium nitride, indium nitride, aluminum nitride, or a ternary or quaternary compound of gallium arsenide, aluminum arsenide, indium phosphide, aluminum phosphide, gallium nitride, indium nitride, aluminum nitride.
7. The semiconductor infrared detector according to claim 1, wherein the thickness of the barrier layer in the multiple quantum well active layer is 0.1nm to 20nm, and the thickness of the potential well layer is 0.1nm to 20nm.
8. The semiconductor infrared detector of claim 1, characterized in that it operates under an applied bias or under zero bias.
9. A method for regulating and controlling the performance of a semiconductor infrared detector based on any one of claims 1 to 8, characterized by comprising:
at least one of the direction, the strength and the position of the local electric field is correspondingly regulated and controlled by regulating and controlling at least one of the doping type, the doping concentration and the doping position of the modulation doping layer, so that the regulation and control of the electronic energy state are realized, the extraction efficiency of photo-generated electrons is improved, and the efficiency of the semiconductor infrared detector is improved.
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| CA2344320A1 (en) * | 2001-04-18 | 2002-10-18 | National Research Council Of Canada | Room temperature quantum well infrared detector |
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| US4620214A (en) * | 1983-12-02 | 1986-10-28 | California Institute Of Technology | Multiple quantum-well infrared detector |
| TWI389344B (en) * | 2008-08-25 | 2013-03-11 | Epistar Corp | Opto-electrical device |
| CN105609582B (en) * | 2015-12-01 | 2017-11-21 | 中国科学院上海微系统与信息技术研究所 | The dilute bismuth quantum well detector and preparation method of a kind of combination interband and valence band Intersubband absorption |
| CN107768461B (en) * | 2016-08-18 | 2020-06-09 | 清华大学 | Semiconductor infrared detector with embedded heavy doping grating layer |
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