CN113130534A - Display panel, display substrate, substrate preparation method and substrate - Google Patents
Display panel, display substrate, substrate preparation method and substrate Download PDFInfo
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- CN113130534A CN113130534A CN202110395613.XA CN202110395613A CN113130534A CN 113130534 A CN113130534 A CN 113130534A CN 202110395613 A CN202110395613 A CN 202110395613A CN 113130534 A CN113130534 A CN 113130534A
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- 239000000758 substrate Substances 0.000 title claims abstract description 114
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 239000002238 carbon nanotube film Substances 0.000 claims abstract description 25
- 239000002061 nanopillar Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 35
- 238000004519 manufacturing process Methods 0.000 claims description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 21
- 239000002041 carbon nanotube Substances 0.000 claims description 21
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 9
- 238000000206 photolithography Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 39
- 239000007787 solid Substances 0.000 description 17
- 239000007788 liquid Substances 0.000 description 14
- 230000005660 hydrophilic surface Effects 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 244000020998 Acacia farnesiana Species 0.000 description 7
- 235000010643 Leucaena leucocephala Nutrition 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003049 inorganic solvent Substances 0.000 description 1
- 229910001867 inorganic solvent Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
Abstract
The disclosure provides a display panel, a display substrate, a substrate and a preparation method thereof. The preparation method of the substrate comprises the following steps: providing a substrate, wherein the surface of one side of the substrate comprises a plurality of first areas and a plurality of second areas, and the first areas and the second areas are staggered along a preset direction; and forming a plurality of nano columns arranged at intervals on each first region, so that the contact angle of the first region provided with the nano columns is larger than that of the second region. The present disclosure is capable of forming carbon nanotube films.
Description
Technical Field
The disclosure relates to the technical field of display, and in particular to a display panel, a display substrate, a substrate and a manufacturing method thereof.
Background
With the improvement of living standard of people, the display panel attracts more and more attention.
A thin film transistor is generally provided in the display panel. The active layer of the thin film transistor mainly comprises amorphous silicon and polycrystalline silicon. The amorphous silicon has low cost and simple process, but has low mobility, which is difficult to satisfy the light emitting requirement of the display panel, while the polysilicon process is complex and limited by complex devices such as ion implantation and laser crystallization. Since Carbon Nanotubes (CNTs) have higher mobility than polysilicon or amorphous silicon, and the flexibility and folding strength of the carbon nanotube thin film are higher, the carbon nanotube thin film can be used as an active layer of a thin film transistor. However, the carbon nanotube film is difficult to form.
Disclosure of Invention
The present disclosure is directed to a display panel, a display substrate, a method for manufacturing the display panel, and a substrate, which can form a carbon nanotube film.
According to an aspect of the present disclosure, there is provided a method of manufacturing a substrate, including:
providing a substrate, wherein the surface of one side of the substrate comprises a plurality of first areas and a plurality of second areas, and the first areas and the second areas are staggered along a preset direction;
and forming a plurality of nano columns arranged at intervals on each first region, so that the contact angle of the first region provided with the nano columns is larger than that of the second region.
Further, forming a plurality of nano-pillars spaced apart on each of the first regions includes:
forming an auxiliary layer covering each of the first regions;
and patterning the auxiliary layer to form a plurality of nano columns arranged at intervals on each first region.
Further, the auxiliary layer covers the second region; patterning the auxiliary layer includes:
and patterning a part of the auxiliary layer corresponding to the first region, and removing a part of the auxiliary layer corresponding to the second region.
Further, patterning the auxiliary layer comprises:
the auxiliary layer is patterned by a photolithography process.
Furthermore, the auxiliary layer is made of an organic glue material.
According to an aspect of the present disclosure, there is provided a method of manufacturing a display substrate, including:
preparing a substrate by adopting the preparation method of the substrate;
and forming a carbon nanotube film on the second region by using the carbon nanotube solution.
Further, the preparation method further comprises the following steps:
and removing the nano-pillars.
According to an aspect of the present disclosure, a method for manufacturing a display panel is provided, which includes the above method for manufacturing a display substrate.
According to an aspect of the present disclosure, there is provided a substrate comprising:
the surface of one side of the substrate comprises a plurality of first areas and a plurality of second areas, and the first areas and the second areas are arranged in a staggered mode along a preset direction;
each first region is provided with a plurality of nano columns which are arranged at intervals, so that the contact angle of the first region provided with the nano columns is larger than that of the second region.
Furthermore, the material of the nano-column is an organic glue material.
Further, the height of the nanopillars is equal to 10nm-200 nm.
Further, the maximum dimension of the cross section of the nano-pillars is equal to 5nm-200 nm.
Further, the distance between two adjacent nano-pillars is equal to 5nm-200 nm.
Furthermore, the plurality of nano-pillars arranged in each first region are distributed in an array.
According to the display panel, the display substrate, the preparation method of the substrate and the substrate, the first areas and the second areas are arranged in a staggered mode along the preset direction, and because each first area is provided with the multiple nano-columns which are arranged at intervals, the contact angle of the first area provided with the nano-columns is larger than that of the second area, namely, the surface wettability of the first area is in a Cassie state; in the process of preparing the carbon nanotube film by using the carbon nanotube solution and the substrate of the present disclosure, the carbon nanotube solution may be confined in the second region, and the carbon nanotube solution flows toward the outside due to the coffee ring effect to realize the sequential arrangement of the carbon nanotubes, thereby forming the carbon nanotube film.
Drawings
FIG. 1 is a diagram showing a Wenzel state of surface wettability in the related art.
FIG. 2 is a schematic diagram showing a Cassie state in surface wettability in the related art.
Fig. 3 is a schematic view showing a coffee ring effect generated after a liquid droplet contacts a solid in the related art.
Fig. 4 is a schematic view of a substrate according to an embodiment of the present disclosure.
Fig. 5 is a schematic view after forming an auxiliary layer in the embodiment of the present disclosure.
Fig. 6 is a schematic illustration after formation of a nanopillar in an embodiment of the disclosure.
Fig. 7 is a schematic diagram after forming a carbon nanotube film in an embodiment of the disclosure.
Fig. 8 is a schematic view of the carbon nanotube solution flowing toward the outside in the embodiment of the present disclosure.
Fig. 9 is a schematic view after removal of the nanopillars in an embodiment of the disclosure.
Fig. 10 is a schematic plan view of a substrate according to an embodiment of the disclosure.
Fig. 11 is a schematic view of a display substrate according to an embodiment of the present disclosure.
Fig. 12 is another schematic view of a display substrate according to an embodiment of the present disclosure.
Description of reference numerals: 1. a solid; 2. a liquid; 3. a substrate; 301. a hydrophilic surface; 3011. a first region; 3012. a second region; 4. a nanopillar; 5. an auxiliary layer; 6. a carbon nanotube film; 7. a gate electrode; 8. a gate insulating layer; 9. an interlayer insulating layer; 10. a source electrode; 11. and a drain electrode.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present disclosure. Rather, they are merely examples of devices consistent with certain aspects of the present disclosure, as detailed in the appended claims.
The terminology used in the present disclosure is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in the description and claims does not indicate any order, quantity, or importance, but rather is used to distinguish one element from another. Also, the use of the terms "a" or "an" and the like do not denote a limitation of quantity, but rather denote the presence of at least one. "plurality" or "a number" means two or more. Unless otherwise indicated, "front", "rear", "lower" and/or "upper" and the like are for convenience of description and are not limited to one position or one spatial orientation. The word "comprising" or "comprises", and the like, means that the element or item listed as preceding "comprising" or "includes" covers the element or item listed as following "comprising" or "includes" and its equivalents, and does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. As used in this disclosure and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
In the related art, the contact angle young formula equation is as follows:
where θ is the theoretical contact angle, γs-gIs the free energy of the solid/gas interface, gammal-sIs the liquid/solid surface free energy, gammal-gIs the liquid/gas surface free energy. However, the condition of applying the equation of the Yang type is that the surface of the solid body is smooth and flat, which is an ideal condition, as shown in FIG. 1, when the surface of the solid body 1 has a certain roughness, the actual contact area of the liquid 2 and the solid body 1 is increased, and is in a Wenzel state.
Introducing a roughness factor m, defined as the ratio of the real surface area to the smooth surface area of a solid of the same volume, the actual contact angle α is related to the theoretical contact angle θ by:
cosα＝m cosθ
it is known that the solid/liquid interface in the Wenzel state amplifies the original hydrophilicity/hydrophobicity. As shown in FIG. 2, when the surface roughness of the solid 1 is further increased, the surface wettability is changed from a Wenzel state to a Cassie state. Cassie state assumes that the droplets are in a complex contact on the rough surface, i.e. the rough surface consists of solid and gaseous substances, the solid substances being distributed uniformly in the form of tiny lumps on the surface, the surface fractions of the solid and liquid substances being respectively f1And f2Intrinsic contact angles are each theta1And theta2And then:
cosα＝f1cosθ1+f2cosθ2
due to intrinsic contact angle theta of gaseous substances2Is 180 °, then:
cosα＝f1cosθ1-f2＜cosθ1
it is found that the contact angle becomes large after the surface wettability is changed to the Cassie state.
As shown in fig. 3, after the liquid 2 contacts the solid 1, the solid 1/liquid 2 interface is fixed during the evaporation process, i.e. the solid 1/liquid 2 contact area is not reduced with the evaporation process, and since the evaporation speed at the liquid 2/solid 1/gas triple junction is faster than that in the liquid 2, the liquid 2 in the liquid 2 is required to flow to the edge, and the process simultaneously transports the solute, forming the coffee ring effect.
The embodiment of the disclosure also provides a preparation method of the substrate. The method for manufacturing a substrate may include step S100 and step S110, wherein:
step S100, providing a substrate, wherein a surface of one side of the substrate includes a plurality of first regions and a plurality of second regions, and the first regions and the second regions are staggered along a preset direction.
Step S110, forming a plurality of nano-pillars on each first region at intervals, where a contact angle of the first region provided with the nano-pillars is larger than a contact angle of the second region.
In the substrate prepared in the embodiment of the present disclosure, the first regions 3011 and the second regions 3012 are arranged in a staggered manner along a predetermined direction, and each first region 3011 is provided with a plurality of nano-pillars 4 arranged at intervals, so that a contact angle of the first region 3011 provided with the nano-pillars 4 is larger than a contact angle of the second region 3012, that is, a surface wettability of the first region 3011 becomes the above Cassie state; as shown in fig. 7 and 8, in the process of preparing the carbon nanotube film 6 using the carbon nanotube solution and the substrate of the present disclosure, the carbon nanotube solution may be confined to the second region 3012, and due to the coffee ring effect described above, the carbon nanotube solution flows toward the outside to achieve the alignment of the carbon nanotubes, thereby forming the carbon nanotube film 6.
The following provides a detailed description of the steps of the method for producing a substrate according to the embodiment of the present disclosure:
in step S100, a substrate is provided, and a surface of one side of the substrate includes a plurality of first regions and a plurality of second regions, and the first regions and the second regions are staggered along a predetermined direction.
As shown in fig. 4, the material of the substrate 3 may be glass, and may also be silicon, but the embodiment of the present disclosure is not limited thereto. The substrate 3 may be a quadrilateral structure, and the sides of any two adjacent substrates 3 are perpendicular. The substrate 3 includes opposite sides in the thickness direction of the substrate 3. The surface on one side of the substrate 3 is a surface on one side of the substrate 3 in the thickness direction. The substrate 3 has a hydrophilic surface 301 on one side in the thickness direction. The first region 3011 and the second region 3012 may be provided on the hydrophilic surface 301. As shown in fig. 10, the number of the first regions 3011 and the second regions 3012 may be multiple, the first regions 3011 and the second regions 3012 may be staggered along a predetermined direction parallel to the hydrophilic surface 301, the second regions 3012 are disposed between any two adjacent first regions 3011, and the first regions 3011 are disposed between any two adjacent second regions 3012. The second region 3012 may be in the shape of a strip and extend along a direction parallel to the hydrophilic surface 301. Taking the substrate 3 as a rectangle, the second region 3012 having a strip shape may be parallel to one side of the substrate 3. The strip-shaped second region 3012 may include two parallel straight sides, both of which are parallel to the extending direction of the strip-shaped second region 3012. The width of the second region 3012 in the form of a stripe may be 50nm to 3000nm, e.g., 50nm, 200nm, 800nm, 1200nm, 1900nm, 3000nm, etc. Further, as shown in fig. 12, a gate electrode 7 and a gate insulating layer 8 covering the gate electrode 7 may be provided on the substrate 3.
In step S110, a plurality of nano-pillars are formed at intervals on each first region, and a contact angle of the first region where the nano-pillars are disposed is larger than a contact angle of the second region.
For example, as shown in fig. 5 and 6, forming a plurality of nano-pillars 4 arranged at intervals on each first region 3011 may include: forming an auxiliary layer 5 covering each first region 3011; the auxiliary layer 5 is patterned to form a plurality of nano-pillars 4 arranged at intervals on each of the first regions 3011. The auxiliary layer 5 may cover the gate insulating layer. Further, the auxiliary layer 5 may cover the second region 3012, and based on this, the patterning auxiliary layer 5 may include: a portion of the patterning auxiliary layer 5 corresponding to the first region 3011 is removed, and a portion of the auxiliary layer 5 corresponding to the second region 3012 is removed. The present disclosure may pattern the above-described auxiliary layer 5 through a photolithography process. The material of the auxiliary layer 5 may be an organic glue material, such as photoresist. The photoresist may be an e-beam photoresist, but the disclosure is not limited thereto. Furthermore, after forming the nanopillars 4, the present disclosure may bombard the hydrophilic surface 301 of the substrate 3 with plasma, on the one hand, to clean up the organic matter remaining on the first region 3011 to reduce the contact angle of the second region 3012; on the other hand, the surface roughness of the nanopillars 4 may be increased to increase the contact angle of the first region 3011 provided with the nanopillars 4. It is noted that, since the present disclosure may employ a photolithography process to form the carbon nano-pillars 4, the method of manufacturing the substrate of the present disclosure may be compatible with an existing semiconductor manufacturing process. Taking the substrate 3 as a silicon wafer as an example, through testing, the contact angle of the surface of the substrate 3 is 51.9 degrees; taking the example that the surface of the substrate 3 is covered with the auxiliary layer 5 and the material of the auxiliary layer 5 is electron beam glue, through testing, the contact angle of the surface of the auxiliary layer 5 is 67.3 degrees; taking the height of the nanopillar 4 as an example of 50nm, the contact angle of the first region 3011 in which the plurality of nanopillars 4 are formed is 84.1 ° through the test. It is understood that the contact angle of the first region 3011 in which the plurality of nanopillars 4 are formed is increased.
The embodiment of the disclosure also provides a preparation method of the display substrate. The method for manufacturing a display substrate may include steps a100 to a110, wherein:
step a100, a substrate is prepared by using the method for preparing a substrate according to any one of the above embodiments.
And A110, forming a carbon nanotube film on the second area through the carbon nanotube solution.
Since the substrate in the method for manufacturing a display substrate according to the embodiment of the present disclosure is manufactured by the method for manufacturing a substrate according to the embodiment described above, the same advantageous effects are obtained, and the details of the present disclosure are not repeated herein.
The following describes in detail the steps of the method for manufacturing a display substrate according to the embodiment of the present disclosure:
in step a100, a substrate is prepared by the method for preparing a substrate according to any one of the above embodiments.
Specifically, as shown in fig. 4 and 6, step a100 may include: providing a substrate 3, wherein one side of the substrate 3 is provided with a hydrophilic surface 301, and the hydrophilic surface 301 comprises two first regions 3011 arranged at intervals and a second region 3012 connected between the two first regions 3011; a plurality of nanopillars 4 are formed at intervals on each first region 3011, and the contact angle of the first region 3011 on which the nanopillars 4 are provided is larger than the contact angle of the second region 3012. The nano-pillars 4 are made of an organic glue material, such as photoresist. The photoresist may be an e-beam photoresist, but the disclosure is not limited thereto.
And A110, forming a carbon nanotube film on the second area through the carbon nanotube solution.
As shown in fig. 7 to 8, the present disclosure may form a carbon nanotube film 6 on a substrate 3 by a pulling method using a carbon nanotube solution as a raw material. The solvent used for the carbon nanotube solution may be toluene, but the embodiments of the present disclosure are not limited thereto. In the formation of the carbon nanotube thin film 6 by the pulling method, the pulling rate may be 6 μm/min to 10mm/min, but the disclosure does not specifically limit thereto. In other embodiments of the present disclosure, the present disclosure may also form the carbon nanotube film 6 by a dipping method, a blade method, a spin coating method, or the like. As shown in fig. 11, the carbon nanotube film 6 may be directly formed on the substrate 3, and after the carbon nanotube film 6 is formed, the present disclosure may further form a gate insulating layer 8 covering the carbon nanotube film 6, a gate electrode 7 disposed on the gate insulating layer 8, an interlayer insulating layer 9 covering the gate electrode 7 and the gate insulating layer 8, a source electrode 10 in contact with the carbon nanotube film 6, and a drain electrode 11 in contact with the carbon nanotube film 6. In other embodiments of the present disclosure, as shown in fig. 12, the substrate 3 may be provided with a gate electrode 7 and a gate insulating layer 8 covering the gate electrode 7, the carbon nanotube film 6 may be formed on the gate insulating layer 8, and after the carbon nanotube film 6 is formed, the present disclosure may further form an interlayer insulating layer 9 covering the gate electrode 7 and the gate insulating layer 8, a source electrode 10 contacting the carbon nanotube film 6, and a drain electrode 11 contacting the carbon nanotube film 6.
In addition, the method for manufacturing a display substrate according to the embodiment of the present disclosure may further include:
and A120, removing the nano-column.
As shown in fig. 9, taking the nano-pillars 4 as an organic glue layer as an example, the present disclosure may remove the nano-pillars 4 by an organic solvent or an inorganic solvent. After removing the nano-pillars 4, the present disclosure may form an interlayer insulating layer, a source electrode, and a drain electrode on the carbon nanotube film 6, but the present disclosure is not limited thereto. In other embodiments, the present disclosure also eliminates the need to remove the nanopillars 4.
The embodiment of the disclosure also provides a preparation method of the display panel. The manufacturing method of the display panel may include the manufacturing method of the display substrate described in any of the above embodiments, and therefore, the manufacturing method of the display panel and the manufacturing method of the display substrate have the same beneficial effects, and the details are not repeated herein.
The embodiment of the disclosure provides a substrate prepared by the preparation method of the substrate in the embodiment. The substrate is used for preparing a display substrate based on carbon nanotubes. As shown in fig. 6, the substrate may include a base plate 3 and nano-pillars 4, wherein:
the surface of one side of the substrate 3 includes a plurality of first regions 3011 and a plurality of second regions 3012, and the first regions 3011 and the second regions 3012 are arranged in a staggered manner along a predetermined direction. Each first region 3011 is provided with a plurality of nano-pillars 4 arranged at intervals, so that the contact angle of the first region 3011 provided with the nano-pillars 4 is larger than that of the second region 3012.
Since the substrate of the embodiments of the present disclosure is prepared by the method for preparing the substrate in the above embodiments, the substrate has the same beneficial effects, and the details of the present disclosure are not repeated herein.
Portions of the substrate of embodiments of the present disclosure are described in detail below:
as shown in fig. 6, the material of the substrate 3 may be glass, and may also be silicon, but the embodiment of the present disclosure is not limited thereto. The substrate 3 may be a quadrilateral structure, and the sides of any two adjacent substrates 3 are perpendicular. The substrate 3 includes opposite sides in the thickness direction of the substrate 3. The surface on one side of the substrate 3 is a surface on one side of the substrate 3 in the thickness direction. The substrate 3 has a hydrophilic surface 301 on one side in the thickness direction. The first region 3011 and the second region 3012 may be provided on the hydrophilic surface 301. As shown in fig. 10, the number of the first regions 3011 and the second regions 3012 may be multiple, the first regions 3011 and the second regions 3012 may be staggered along a predetermined direction parallel to the hydrophilic surface 301, the second regions 3012 are disposed between any two adjacent first regions 3011, and the first regions 3011 are disposed between any two adjacent second regions 3012. The second region 3012 may be in the shape of a strip and extend along a direction parallel to the hydrophilic surface 301. The carbon nanotube solution confined in the second region 3012 moves towards two sides along the extending direction of the second region 3012. Taking the substrate 3 as a rectangle, the second region 3012 having a strip shape may be parallel to one side of the substrate 3. The strip-shaped second region 3012 may include two parallel straight sides, both of which are parallel to the extending direction of the strip-shaped second region 3012. In addition, the width of the second region 3012 in a stripe shape may be 50nm to 3000nm, for example, 50nm, 200nm, 800nm, 1200nm, 1900nm, 3000nm, or the like.
As shown in fig. 6, each of the first regions 3011 is provided with a nanopillar 4. The number of the nano-pillars 4 may be plural, and any two nano-pillars 4 are arranged at intervals. The cross section of the nano-pillar 4 may be rectangular, and of course, may also be circular, but the embodiment of the present disclosure is not limited thereto. The nano-pillars 4 are made of an organic glue material, such as photoresist. The photoresist may be an e-beam photoresist, but the disclosure is not limited thereto. The height of the nanopillars 4 may be equal to 10nm-200nm, such as 10nm, 50nm, 70nm, 90nm, 140nm, 200nm, and the like. The maximum dimension of the cross section of the nanopillar 4 may be equal to 5nm-200nm, such as 5nm, 60nm, 70nm, 100nm, 130nm, 200nm, etc. Taking the example that the cross section of the nano-pillar 4 is circular, the maximum size of the cross section of the nano-pillar 4 is the diameter of the cross section of the nano-pillar 4. In addition, the plurality of nanopillars 4 disposed in each first region 3011 may be distributed in an array. In addition, the distance between two adjacent nanopillars 4 disposed in each first region 3011 is equal to 50nm to 200nm, such as 50nm, 60nm, 80nm, 110nm, 130nm, 200nm, and the like. The plurality of nanopillars 4 provided in each first region 3011 of the present disclosure make the surface wettability of the first region 3011 in a Cassie state, thereby increasing the contact angle of the first region 3011 provided with the nanopillars 4.
Although the present disclosure has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure.
Claims (14)
1. A method of preparing a substrate, comprising:
providing a substrate, wherein the surface of one side of the substrate comprises a plurality of first areas and a plurality of second areas, and the first areas and the second areas are staggered along a preset direction;
and forming a plurality of nano columns arranged at intervals on each first region, so that the contact angle of the first region provided with the nano columns is larger than that of the second region.
2. The method of claim 1, wherein forming a plurality of spaced-apart nanopillars on each of the first regions comprises:
forming an auxiliary layer covering each of the first regions;
and patterning the auxiliary layer to form a plurality of nano columns arranged at intervals on each first region.
3. A method for producing a substrate according to claim 2, wherein the auxiliary layer covers the second region; patterning the auxiliary layer includes:
and patterning a part of the auxiliary layer corresponding to the first region, and removing a part of the auxiliary layer corresponding to the second region.
4. A method of manufacturing a substrate according to any of claims 1-3, wherein patterning the auxiliary layer comprises:
the auxiliary layer is patterned by a photolithography process.
5. The method for manufacturing a substrate according to claim 4, wherein the auxiliary layer is made of an organic glue.
6. A method for preparing a display substrate is characterized by comprising the following steps:
preparing a substrate by the method for preparing a substrate according to any one of claims 1 to 5;
and forming a carbon nanotube film on the second region by using the carbon nanotube solution.
7. The method for manufacturing a display substrate according to claim 6, further comprising:
and removing the nano-pillars.
8. A method for manufacturing a display panel, comprising the method for manufacturing a display substrate according to claim 6 or 7.
9. A substrate, comprising:
the surface of one side of the substrate comprises a plurality of first areas and a plurality of second areas, and the first areas and the second areas are arranged in a staggered mode along a preset direction;
each first region is provided with a plurality of nano columns which are arranged at intervals, so that the contact angle of the first region provided with the nano columns is larger than that of the second region.
10. The substrate of claim 9, wherein the material of the nanopillars is an organic glue material.
11. The substrate according to claim 9, characterized in that the height of the nanopillars is equal to 10-200 nm.
12. The substrate according to claim 9, characterized in that the maximum dimension of the cross section of the nanopillars is equal to 5-200 nm.
13. The substrate according to claim 9, characterized in that the distance between two adjacent nanopillars is equal to 50-200 nm.
14. The substrate of claim 9, wherein the plurality of nanopillars disposed in each of the first regions are arranged in an array.
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Citations (5)
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| US20060160277A1 (en) * | 2003-01-17 | 2006-07-20 | Henning Sirringhaus | Active layer island |
| US20110300345A1 (en) * | 2010-06-03 | 2011-12-08 | Samsung Electronics Co., Ltd. | Surface Having Superhydrophobic Region And Superhydrophilic Region |
| KR20150012929A (en) * | 2013-07-26 | 2015-02-04 | 엘지이노텍 주식회사 | Electrode member and touch panel with the same |
| US20190214565A1 (en) * | 2018-01-10 | 2019-07-11 | Carbonics Inc. | Deposition of carbon nanotubes on substrates and electrical devices manufactured therefrom |
| CN110482530A (en) * | 2019-09-04 | 2019-11-22 | 北京华碳元芯电子科技有限责任公司 | A method of preparing patterned carbon nanotube film |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20060160277A1 (en) * | 2003-01-17 | 2006-07-20 | Henning Sirringhaus | Active layer island |
| US20110300345A1 (en) * | 2010-06-03 | 2011-12-08 | Samsung Electronics Co., Ltd. | Surface Having Superhydrophobic Region And Superhydrophilic Region |
| KR20150012929A (en) * | 2013-07-26 | 2015-02-04 | 엘지이노텍 주식회사 | Electrode member and touch panel with the same |
| US20190214565A1 (en) * | 2018-01-10 | 2019-07-11 | Carbonics Inc. | Deposition of carbon nanotubes on substrates and electrical devices manufactured therefrom |
| CN110482530A (en) * | 2019-09-04 | 2019-11-22 | 北京华碳元芯电子科技有限责任公司 | A method of preparing patterned carbon nanotube film |
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