CN113130468A - Flip chip semiconductor package and manufacturing method thereof - Google Patents
Flip chip semiconductor package and manufacturing method thereof Download PDFInfo
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- CN113130468A CN113130468A CN202110404924.8A CN202110404924A CN113130468A CN 113130468 A CN113130468 A CN 113130468A CN 202110404924 A CN202110404924 A CN 202110404924A CN 113130468 A CN113130468 A CN 113130468A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000004806 packaging method and process Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 8
- 238000012545 processing Methods 0.000 claims description 55
- 238000001914 filtration Methods 0.000 claims description 10
- 238000001514 detection method Methods 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Power Engineering (AREA)
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Abstract
The invention discloses a flip chip semiconductor package and a manufacturing method thereof, and the flip chip semiconductor package comprises a body, wherein the body comprises a circuit module, a wire module and a substrate, the substrate comprises a circuit structure, a semiconductor component, a dielectric layer, a through hole conductive structure and a through part, the semiconductor component is arranged on the circuit structure, the dielectric layer penetrates through and covers the semiconductor component, the dielectric layer is provided with a through part wall surface corresponding to the through part, the through part exposes the circuit structure, and the through hole conductive structure is formed on the through part wall surface and electrically connected with the circuit structure. The invention realizes the purpose of high precision, can process wireless data and detection data, thereby avoiding the existence of larger errors of data and actual data of remote transmission, improving the experience of a user on the semiconductor packaging piece, meeting the requirements of the current market, improving the practicability and usability of the semiconductor packaging piece, and solving the problem of low precision of the traditional semiconductor packaging piece.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a flip chip semiconductor packaging piece and a manufacturing method thereof.
Background
The semiconductor refers to a material with electric conductivity between a conductor and an insulator at normal temperature, and has applications in the fields of integrated circuits, consumer electronics, communication systems, photovoltaic power generation, lighting, high-power conversion and the like, for example, a diode is a device manufactured by using the semiconductor, and the importance of the semiconductor is very great from the viewpoint of science and technology or economic development, most electronic products, such as computers, mobile phones or digital recorders, have extremely close association with the semiconductor in core units, common semiconductor materials include silicon, germanium, gallium arsenide and the like, silicon is the most influential one of various semiconductor material applications, and the semiconductor package belongs to one of the products, but most of the conventional semiconductor packages have low precision and cannot process wireless data and detection data, so that great errors exist in remotely transmitted data and actual data, the demand of the current market cannot be satisfied, and due to the above problems, the practicality and usability of the semiconductor package are reduced, and a flip chip semiconductor package and a method for manufacturing the same have been purposefully introduced.
Disclosure of Invention
The invention aims to provide a flip chip semiconductor package and a manufacturing method thereof, which have the advantage of high precision and solve the problem of low precision of the conventional semiconductor package.
In order to achieve the purpose, the invention provides the following technical scheme: a flip chip semiconductor package comprises a body, wherein the body comprises a circuit module, a wire module and a substrate, the substrate comprises a circuit structure, a semiconductor component, a dielectric layer, a through hole conductive structure and a through part, the semiconductor component is arranged on the circuit structure, the dielectric layer penetrates through and covers the semiconductor component, the dielectric layer is provided with a through part wall surface corresponding to the through part, the through part exposes the circuit structure, and the through hole conductive structure is formed on the through part wall surface and electrically connected with the circuit structure.
Preferably, the circuit module comprises a power module, the output end of the power module is electrically connected with a sensor module, a clock module, a storage module, a wireless transceiver module, a driving module and an LED module respectively, the output end and the input end of the storage module are electrically connected with a central processing unit, the sensor module comprises an acquisition module, a signal processing module and an AD/DA, the wireless transceiver module comprises a signal coding module, a baseband modulation module, a radio frequency modulation module and a radio frequency transceiver, the output end of the sensor module is electrically connected with the input end of the central processing unit, the output end of the clock module is electrically connected with the input end of the central processing unit, the output end and the input end of the wireless transceiver module are electrically connected with the input end and the output end of the central processing unit, the output end of the driving module is electrically connected with the input end, the output end of the LED module is electrically connected with the input end of the central processing unit.
Preferably, the output end of the acquisition module is electrically connected with the input end of the signal processing module, and the output end of the signal processing module is electrically connected with the input end of the AD/DA.
Preferably, the signal processing module comprises a filtering module and a signal amplifying module, and an output end of the filtering module is electrically connected with an input end of the signal amplifying module.
Preferably, the output end and the input end of the channel coding module are electrically connected with the input end and the output end of the baseband modulation module, the output end and the input end of the baseband modulation module are electrically connected with the input end and the output end of the radio frequency modulation module, and the output end and the input end of the radio frequency modulation module are electrically connected with the input end and the output end of the radio frequency transceiver.
Preferably, the model of the central processing unit is STC12LE5410AD, and the model of the radio frequency transceiver is NRF 905.
A method of manufacturing a flip chip semiconductor package, comprising the steps of:
A. selecting a proper substrate according to the use requirement by a user;
B. placing a substrate on a processing workbench by a user, and arranging a photosensitive chip on the substrate by the user, wherein the substrate comprises a grounding part;
C. a user covers the chip to form a heat-resistant film on the upper surface of the photosensitive chip, so that the heat resistance of the photosensitive chip is improved;
D. packaging the photosensitive chip by a user, and forming an accommodating space by surrounding a packaging body on the photosensitive chip and the outer side surface of the heat-resistant film by a packaging machine;
E. electrically connecting a shielding film to the ground portion by a user, wherein a first portion of the shielding film is formed on a lower surface of the package and a second portion of the shielding film is formed on an upper surface of the heat resistant film;
F. removing the second portions of the heat-resistant film and the shielding film by a user to expose the photosensitive chip;
G. the condensing lens is arranged by a user and comprises a condensing part and an accommodating part, wherein the accommodating part is connected with the condensing part and is arranged in the accommodating space, the condensing part is positioned outside the accommodating space, and the outer diameter of the condensing part is larger than that of the accommodating part.
Preferably, the substrate in the step D has a pair of alignment marks, and the pair of alignment marks is located before the step of electrically connecting the shielding film to the ground.
Compared with the prior art, the invention has the following beneficial effects:
the invention realizes the purpose of high precision, can process wireless data and detection data, thereby avoiding the existence of larger errors of data and actual data of remote transmission, improving the experience of a user on the semiconductor packaging piece, meeting the requirements of the current market, improving the practicability and usability of the semiconductor packaging piece, and solving the problem of low precision of the traditional semiconductor packaging piece.
Drawings
FIG. 1 is a first schematic diagram of the system of the present invention;
FIG. 2 is a second schematic diagram of the system of the present invention;
fig. 3 is a third schematic diagram of the system of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-3, a flip chip semiconductor package comprises a body including a circuit module, a wire module and a substrate, the substrate includes a circuit structure, a semiconductor assembly, a dielectric layer, a through hole conductive structure and a through portion, the semiconductor assembly is disposed on the circuit structure, the dielectric layer penetrates and covers the semiconductor assembly, the dielectric layer has a through portion wall corresponding to the through portion, the through portion exposes the circuit structure, the through hole conductive structure is formed on the through portion wall and electrically connects the wire structure, the circuit module includes a power module, an output end of the power module is electrically connected with a sensor module, a clock module, a storage module, a wireless transceiver module, a driving module and an LED module, an output end and an input end of the storage module are electrically connected with a central processing unit, the sensor module includes an acquisition module, a signal processing module and an AD/DA, the wireless transceiver module comprises a signal coding module, a baseband modulation module, a radio frequency modulation module and a radio frequency transceiver, the output end of the sensor module is electrically connected with the input end of the central processing unit, the output end of the clock module is electrically connected with the input end of the central processing unit, the output end and the input end of the wireless transceiver module are electrically connected with the input end and the output end of the central processing unit, the output end of the driving module is electrically connected with the input end of the central processing unit, the output end of the LED module is electrically connected with the input end of the central processing unit, the output end of the acquisition module is electrically connected with the input end of the signal processing module, the output end of the signal processing module is electrically connected with the input end of the AD/DA, the signal processing module comprises a filtering module and a signal amplifying module, the output end of the filtering module is electrically connected with the input end of, the invention realizes the purpose of high precision, and can process wireless data and detection data, thereby avoiding the existence of larger error in data and actual data of remote transmission, improving the experience of a user on the semiconductor packaging piece, meeting the requirements of the current market, improving the practicability and usability of the semiconductor packaging piece, and solving the problem of low precision of the traditional semiconductor packaging piece.
A method of manufacturing a flip chip semiconductor package, comprising the steps of:
A. selecting a proper substrate according to the use requirement by a user;
B. placing a substrate on a processing workbench by a user, and arranging a photosensitive chip on the substrate by the user, wherein the substrate comprises a grounding part;
C. a user covers the chip to form a heat-resistant film on the upper surface of the photosensitive chip, so that the heat resistance of the photosensitive chip is improved;
D. packaging the photosensitive chip by a user, and forming an accommodating space by surrounding a packaging body on the photosensitive chip and the outer side surface of the heat-resistant film by a packaging machine;
E. electrically connecting a shielding film to the ground portion by a user, wherein a first portion of the shielding film is formed on a lower surface of the package and a second portion of the shielding film is formed on an upper surface of the heat resistant film;
F. removing the second portions of the heat-resistant film and the shielding film by a user to expose the photosensitive chip;
G. the condensing lens is arranged by a user and comprises a condensing part and an accommodating part, wherein the accommodating part is connected with the condensing part and is arranged in the accommodating space, the condensing part is positioned outside the accommodating space, and the outer diameter of the condensing part is larger than that of the accommodating part.
Example 1
A flip chip semiconductor package comprises a body, the body comprises a circuit module, a wire module and a substrate, the substrate comprises a circuit structure, a semiconductor assembly, a dielectric layer, a through hole conductive structure and a through part, the semiconductor assembly is arranged on the circuit structure, the dielectric layer penetrates through and coats the semiconductor assembly, the dielectric layer is provided with a through part wall surface corresponding to the through part, the through part exposes the circuit structure, the through hole conductive structure is formed on the through part wall surface and electrically connected with the circuit structure, the circuit module comprises a power supply module, the output end of the power supply module is respectively and electrically connected with a sensor module, a clock module, a storage module, a wireless transceiver module, a driving module and an LED module, the output end and the input end of the storage module are both electrically connected with a central processing unit, the sensor module comprises a collection module, a signal processing module and an AD, The output end of the sensor module is electrically connected with the input end of the central processing unit, the output end of the clock module is electrically connected with the input end of the central processing unit, the output end and the input end of the wireless transceiving module are electrically connected with the input end and the output end of the central processing unit, the output end of the driving module is electrically connected with the input end of the central processing unit, the output end of the LED module is electrically connected with the input end of the central processing unit, the output end of the acquisition module is electrically connected with the input end of the signal processing module, the output end of the signal processing module is electrically connected with the input end of the AD/DA, the signal processing module comprises a filtering module and a signal amplifying module, the output end of the filtering module is electrically connected with the input end of the signal amplifying module, and the output end and the input end of the channel coding module, the invention realizes the purpose of high precision, and can process wireless data and detection data, thereby avoiding the existence of larger error in data and actual data of remote transmission, improving the experience of a user on the semiconductor packaging piece, meeting the requirements of the current market, improving the practicability and usability of the semiconductor packaging piece, and solving the problem of low precision of the traditional semiconductor packaging piece.
A method of manufacturing a flip chip semiconductor package, comprising the steps of:
A. selecting a proper substrate according to the use requirement by a user;
B. placing a substrate on a processing workbench by a user, and arranging a photosensitive chip on the substrate by the user, wherein the substrate comprises a grounding part;
C. a user covers the chip to form a heat-resistant film on the upper surface of the photosensitive chip, so that the heat resistance of the photosensitive chip is improved;
D. packaging the photosensitive chip by a user, and forming an accommodating space by surrounding a packaging body on the photosensitive chip and the outer side surface of the heat-resistant film by a packaging machine;
E. electrically connecting a shielding film to the ground portion by a user, wherein a first portion of the shielding film is formed on a lower surface of the package and a second portion of the shielding film is formed on an upper surface of the heat resistant film;
F. removing the second portions of the heat-resistant film and the shielding film by a user to expose the photosensitive chip;
G. the condensing lens is arranged by a user and comprises a condensing part and an accommodating part, wherein the accommodating part is connected with the condensing part and is arranged in the accommodating space, the condensing part is positioned outside the accommodating space, and the outer diameter of the condensing part is larger than that of the accommodating part.
Example 2
In example 1, the following additional steps were added:
the substrate in step D has a alignment mark, and the alignment mark is located before the step of electrically connecting the shielding film to the grounding part.
A flip chip semiconductor package comprises a body, the body comprises a circuit module, a wire module and a substrate, the substrate comprises a circuit structure, a semiconductor assembly, a dielectric layer, a through hole conductive structure and a through part, the semiconductor assembly is arranged on the circuit structure, the dielectric layer penetrates through and coats the semiconductor assembly, the dielectric layer is provided with a through part wall surface corresponding to the through part, the through part exposes the circuit structure, the through hole conductive structure is formed on the through part wall surface and electrically connected with the circuit structure, the circuit module comprises a power supply module, the output end of the power supply module is respectively and electrically connected with a sensor module, a clock module, a storage module, a wireless transceiver module, a driving module and an LED module, the output end and the input end of the storage module are both electrically connected with a central processing unit, the sensor module comprises a collection module, a signal processing module and an AD, The output end of the sensor module is electrically connected with the input end of the central processing unit, the output end of the clock module is electrically connected with the input end of the central processing unit, the output end and the input end of the wireless transceiving module are electrically connected with the input end and the output end of the central processing unit, the output end of the driving module is electrically connected with the input end of the central processing unit, the output end of the LED module is electrically connected with the input end of the central processing unit, the output end of the acquisition module is electrically connected with the input end of the signal processing module, the output end of the signal processing module is electrically connected with the input end of the AD/DA, the signal processing module comprises a filtering module and a signal amplifying module, the output end of the filtering module is electrically connected with the input end of the signal amplifying module, and the output end and the input end of the channel coding module, the invention realizes the purpose of high precision, and can process wireless data and detection data, thereby avoiding the existence of larger error in data and actual data of remote transmission, improving the experience of a user on the semiconductor packaging piece, meeting the requirements of the current market, improving the practicability and usability of the semiconductor packaging piece, and solving the problem of low precision of the traditional semiconductor packaging piece.
A method of manufacturing a flip chip semiconductor package, comprising the steps of:
A. selecting a proper substrate according to the use requirement by a user;
B. placing a substrate on a processing workbench by a user, and arranging a photosensitive chip on the substrate by the user, wherein the substrate comprises a grounding part;
C. a user covers the chip to form a heat-resistant film on the upper surface of the photosensitive chip, so that the heat resistance of the photosensitive chip is improved;
D. packaging the photosensitive chip by a user, and forming an accommodating space by surrounding a packaging body on the photosensitive chip and the outer side surface of the heat-resistant film by a packaging machine;
E. electrically connecting a shielding film to the ground portion by a user, wherein a first portion of the shielding film is formed on a lower surface of the package and a second portion of the shielding film is formed on an upper surface of the heat resistant film;
F. removing the second portions of the heat-resistant film and the shielding film by a user to expose the photosensitive chip;
G. the condensing lens is arranged by a user and comprises a condensing part and an accommodating part, wherein the accommodating part is connected with the condensing part and is arranged in the accommodating space, the condensing part is positioned outside the accommodating space, and the outer diameter of the condensing part is larger than that of the accommodating part.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. A flip chip semiconductor package comprising a body, characterized in that: the body comprises a circuit module, a wire module and a substrate, wherein the substrate comprises a circuit structure, a semiconductor component, a dielectric layer, a through hole conductive structure and a through part, the semiconductor component is arranged on the circuit structure, the dielectric layer penetrates through and covers the semiconductor component, the dielectric layer is provided with a through part wall surface corresponding to the through part, the through part exposes the circuit structure, and the through hole conductive structure is formed on the through part wall surface and electrically connected with the circuit structure.
2. The flip chip semiconductor package of claim 1, wherein: the circuit module comprises a power supply module, the output end of the power supply module is respectively and electrically connected with a sensor module, a clock module, a storage module, a wireless transceiver module, a driving module and an LED module, the output end and the input end of the storage module are both electrically connected with a central processing unit, the sensor module comprises an acquisition module, a signal processing module and an AD/DA (analog-to-digital) module, the wireless transceiver module comprises a signal coding module, a baseband modulation module, a radio frequency modulation module and a radio frequency transceiver, the output end of the sensor module is electrically connected with the input end of the central processing unit, the output end of the clock module is electrically connected with the input end of the central processing unit, the output end and the input end of the wireless transceiver module are electrically connected with the input end and the output end of the central processing unit, and, the output end of the LED module is electrically connected with the input end of the central processing unit.
3. The flip chip semiconductor package of claim 2, wherein: the output end of the acquisition module is electrically connected with the input end of the signal processing module, and the output end of the signal processing module is electrically connected with the input end of the AD/DA.
4. The flip chip semiconductor package of claim 2, wherein: the signal processing module comprises a filtering module and a signal amplifying module, and the output end of the filtering module is electrically connected with the input end of the signal amplifying module.
5. The flip chip semiconductor package of claim 2, wherein: the output end and the input end of the channel coding module are electrically connected with the input end and the output end of the baseband modulation module, the output end and the input end of the baseband modulation module are electrically connected with the input end and the output end of the radio frequency modulation module, and the output end and the input end of the radio frequency modulation module are electrically connected with the input end and the output end of the radio frequency transceiver.
6. The flip chip semiconductor package of claim 2, wherein: the model of the central processing unit is STC12LE5410AD, and the model of the radio frequency transceiver is NRF 905.
7. A method of manufacturing a flip chip semiconductor package, comprising: the method comprises the following steps:
A. selecting a proper substrate according to the use requirement by a user;
B. placing a substrate on a processing workbench by a user, and arranging a photosensitive chip on the substrate by the user, wherein the substrate comprises a grounding part;
C. a user covers the chip to form a heat-resistant film on the upper surface of the photosensitive chip, so that the heat resistance of the photosensitive chip is improved;
D. packaging the photosensitive chip by a user, and forming an accommodating space by surrounding a packaging body on the photosensitive chip and the outer side surface of the heat-resistant film by a packaging machine;
E. electrically connecting a shielding film to the ground portion by a user, wherein a first portion of the shielding film is formed on a lower surface of the package and a second portion of the shielding film is formed on an upper surface of the heat resistant film;
F. removing the second portions of the heat-resistant film and the shielding film by a user to expose the photosensitive chip;
G. the condensing lens is arranged by a user and comprises a condensing part and an accommodating part, wherein the accommodating part is connected with the condensing part and is arranged in the accommodating space, the condensing part is positioned outside the accommodating space, and the outer diameter of the condensing part is larger than that of the accommodating part.
8. The method of manufacturing a flip chip semiconductor package according to claim 7, wherein: the substrate in the step D is provided with a contraposition mark which is positioned before the step of electrically connecting the shielding film with the grounding part.
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| CN202110404924.8A CN113130468A (en) | 2021-04-15 | 2021-04-15 | Flip chip semiconductor package and manufacturing method thereof |
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| CN202110404924.8A CN113130468A (en) | 2021-04-15 | 2021-04-15 | Flip chip semiconductor package and manufacturing method thereof |
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| US20190348375A1 (en) * | 2018-05-10 | 2019-11-14 | Phoenix Pioneer Technology Co., Ltd. | Flip-chip packaging substrate and method for fabricating the same |
| CN112099395A (en) * | 2020-08-20 | 2020-12-18 | 后英集团鞍山活龙矿业有限公司 | Mining area safety monitoring and controlling system |
| CN212623777U (en) * | 2020-08-27 | 2021-02-26 | 泱焓冷链系统(江苏)有限公司 | Temperature regulating system of cold chain equipment |
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2021
- 2021-04-15 CN CN202110404924.8A patent/CN113130468A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102082130A (en) * | 2009-11-30 | 2011-06-01 | 日月光半导体制造股份有限公司 | Semiconductor package piece and manufacturing method thereof |
| CN101982876A (en) * | 2010-09-07 | 2011-03-02 | 日月光半导体制造股份有限公司 | Semiconductor packaging part and manufacturing method thereof |
| CN102881704A (en) * | 2012-10-18 | 2013-01-16 | 日月光半导体制造股份有限公司 | Photodetecting semiconductor packaging component and manufacturing method thereof |
| US20190348375A1 (en) * | 2018-05-10 | 2019-11-14 | Phoenix Pioneer Technology Co., Ltd. | Flip-chip packaging substrate and method for fabricating the same |
| CN112099395A (en) * | 2020-08-20 | 2020-12-18 | 后英集团鞍山活龙矿业有限公司 | Mining area safety monitoring and controlling system |
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