CN113130451A - Backside illuminated image sensor chip - Google Patents

Backside illuminated image sensor chip Download PDF

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Publication number
CN113130451A
CN113130451A CN201911397446.1A CN201911397446A CN113130451A CN 113130451 A CN113130451 A CN 113130451A CN 201911397446 A CN201911397446 A CN 201911397446A CN 113130451 A CN113130451 A CN 113130451A
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CN
China
Prior art keywords
substrate
capacitor
metal
image sensor
sensor chip
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Pending
Application number
CN201911397446.1A
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Chinese (zh)
Inventor
乔劲轩
陈志远
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Geke Microelectronics Shanghai Co Ltd
Galaxycore Shanghai Ltd Corp
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Geke Microelectronics Shanghai Co Ltd
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Priority to CN201911397446.1A priority Critical patent/CN113130451A/en
Publication of CN113130451A publication Critical patent/CN113130451A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

The invention provides a back-illuminated image sensor chip, which avoids occupying larger area of the front side of a substrate by arranging a capacitor on the back side of the substrate and connecting the capacitor with a main circuit on the front side of the substrate, improves the integration level of the chip, reduces the coupling interference on the main circuit, realizes the requirements of high capacitance value and high quality factor by using thick metal on the back side of the substrate as a capacitor polar plate, improves the performance of the chip, reduces the system cost and improves the utilization rate of internal wiring of the chip.

Description

Backside illuminated image sensor chip
Technical Field
The present invention relates to a back-illuminated image sensor chip.
Background
Back-illuminated image sensor chips typically include a semiconductor substrate having opposing front and back surfaces, with light entering the substrate from the back surface, and a metal layer for forming interconnect circuitry disposed on the front surface of the substrate. As the feature size of the integrated circuit process is reduced, the area of the integrated circuit chip is smaller, and the reduction of the area means the reduction of the cost. Passive components, such as capacitors, required for integrated circuit design cannot be reduced to the same extent as transistors, and therefore, the larger area of the passive components becomes a bottleneck in the reduction of the integrated circuit chip.
At present, aiming at the problem of large occupied area of a capacitor, a simple method is adopted for placing the capacitor outside a chip, but the use of the capacitor outside the chip reduces the integration level of the chip and increases the system cost for applying the chip; the additional bonding pads are not favorable for further reduction of the chip area. In order to increase the capacitance value per unit area of an MIM (metal-insulator-metal) capacitor provided by an integrated circuit fabrication factory, a special process layer is added to reduce the distance between an upper polar plate and a lower polar plate, so that an additional mask plate is required, and the manufacturing cost is increased. The improvement of MOM (metal-oxide-metal) capacitance value generally adopts a structure of a multi-layer metal stacking inserted finger, which reduces the utilization rate of internal wiring of a chip.
Disclosure of Invention
The invention aims to provide a back-illuminated image sensor chip, which saves the chip area, improves the chip integration level, improves the chip performance, reduces the system cost and improves the utilization rate of internal wiring of the chip.
In view of the above, the present invention provides a back-illuminated image sensor chip, comprising: a semiconductor substrate having opposing front and back surfaces, wherein light enters the substrate from the back surface; the main body circuit is arranged on the front surface of the substrate; the capacitor is arranged on the back surface of the substrate; the capacitor and the main circuit are connected with each other.
Preferably, the back surface of the substrate is provided with a single layer of metal, and the single layer of metal is used as a polar plate of the capacitor.
Preferably, the substrate back surface has multiple layers of metal, wherein the thickest layer or layers of metal serve as plates of the capacitor.
Preferably, the metal protrudes from the surface of the back surface of the substrate.
Preferably, the metal is located in a recess in the back side of the substrate.
Preferably, the groove penetrates through the semiconductor material of the substrate, and an oxide layer arranged on the front surface of the substrate is used as the bottom of the groove.
Preferably, the side wall of the metal is spaced apart from the side wall of the groove.
Preferably, the capacitor is connected with the main circuit through a through hole or a groove.
Preferably, the capacitor is connected to a power line metal, a ground line metal or a signal line metal of the main circuit.
Preferably, the capacitor is in a finger insertion structure or a flat plate structure.
Preferably, the capacitor is a metal-insulator-metal capacitor or a metal-oxide-metal capacitor.
According to the back-illuminated image sensor chip, the capacitor is arranged on the back surface of the substrate and is connected with the main circuit on the front surface of the substrate, so that the occupation of a large area on the front surface of the substrate is avoided, the integration level of the chip is improved, the coupling interference on the main circuit is reduced, the thick metal on the back surface of the substrate is used as a capacitor polar plate, the requirements of high capacitance value and high quality factor are met, the performance of the chip is improved, the system cost is reduced, and the utilization rate of internal wiring of the chip is improved.
Drawings
Other features, objects and advantages of the present invention will become more apparent from the following detailed description of non-limiting embodiments thereof, which proceeds with reference to the accompanying drawings.
FIG. 1 is a schematic backside view of a backside illuminated image sensor chip of the present invention;
FIG. 2 is a partial cross-sectional view taken along line A-A of FIG. 1 in accordance with a preferred embodiment of the present invention;
FIG. 3 is a partial cross-sectional view taken along line A-A of FIG. 1 in accordance with another preferred embodiment of the present invention;
FIG. 4 is a partial cross-sectional view taken along line A-A of FIG. 1 in accordance with another preferred embodiment of the present invention;
FIG. 5 is a schematic backside view of a back side illuminated image sensor chip according to yet another preferred embodiment of the present invention;
fig. 6 is a partial cross-sectional view taken along line a-a of fig. 5.
In the drawings, like or similar reference numbers indicate like or similar devices (modules) or steps throughout the different views.
Detailed Description
In order to solve the problems in the prior art, the invention provides a back-illuminated image sensor chip, wherein a capacitor is arranged on the back surface of a substrate and is connected with a main circuit on the front surface of the substrate, so that the occupation of a large area on the front surface of the substrate is avoided, the integration level of the chip is improved, the coupling interference on the main circuit is reduced, the thick metal on the back surface of the substrate is used as a capacitor polar plate, the requirements of high capacitance value and high quality factor are met, the performance of the chip is improved, the system cost is reduced, and the utilization rate of internal wiring of the chip is improved.
In the following detailed description of the preferred embodiments, reference is made to the accompanying drawings which form a part hereof. The accompanying drawings illustrate, by way of example, specific embodiments in which the invention may be practiced. The illustrated embodiments are not intended to be exhaustive of all embodiments according to the invention. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.
The present invention will be described in detail with reference to specific examples.
Fig. 1 and 2 show a preferred embodiment of the back-illuminated image sensor chip of the invention, wherein the back-illuminated image sensor chip comprises a semiconductor substrate 01 having opposite front and back surfaces 01A and 01B, wherein light enters the substrate 01 from the back surface 01B, and an oxide layer 06 is provided on the front surface 01A. The main body circuit 04 is disposed on the front surface 01A of the substrate, the capacitor 02 is disposed on the back surface 01B of the substrate, and the capacitor 02 and the main body circuit 04 are connected to each other through a through hole or a trench 03 in the substrate 01. Preferably, the capacitor 02 is connected to a power line metal, a ground line metal or a signal line metal of the main circuit 04.
According to the preferred embodiment shown in fig. 2, the substrate backside 01B has a single layer of metal that acts as a plate of the capacitor 02. According to other preferred embodiments not shown, the substrate back side 01B may also have multiple layers of metals, and it is preferable to use the thickest layer of metal (which may be the layer of metal next to the substrate back side 01B or the layer of metal at a certain distance from the substrate back side 01B) as the plate of the capacitor 02, or multiple layers of metal stacked as the plate of the capacitor 02, so as to meet the requirements for high capacitance and high quality factor. Specifically, the capacitance value and the quality factor of the capacitor 02 can be simulated by an electromagnetic field simulation tool, and can also be obtained by using a Calibre circuit back-lifting tool.
In addition, in the preferred embodiment shown in fig. 2, the metal that is the plate of capacitor 02 protrudes from the surface of substrate backside 01B. In other preferred embodiments shown in fig. 3 and 4, the metal as the plate of the capacitor 02 may also be located in the recess on the back surface 01B of the substrate, except that in the embodiment shown in fig. 3, the recess only occupies a part of the semiconductor material of the substrate in the depth direction, and does not completely penetrate the semiconductor material of the substrate, and in the embodiment shown in fig. 4, the recess penetrates the semiconductor material of the substrate, and the oxide layer 06 disposed on the front surface of the substrate serves as the bottom of the recess, and compared to the embodiment shown in fig. 3, the structure of fig. 4 avoids parasitic capacitive coupling between the bottom surface of the capacitor facing the substrate and the substrate.
Fig. 5 and 6 show another preferred embodiment of the back side illuminated image sensor chip of the present invention, wherein the area 05 in the dotted line is a groove area, the groove 05 penetrates through the semiconductor material of the substrate, and the oxide layer 06 disposed on the front side of the substrate is used as the bottom of the groove 05, unlike the embodiment shown in fig. 4, in the embodiment of fig. 6, the metal sidewall of the capacitor 02 is not attached to the sidewall of the groove 05, but is spaced a certain distance, so that not only the parasitic capacitive coupling between the bottom surface of the capacitor facing the substrate and the substrate is avoided, but also the distance between the capacitor sidewall and the substrate is enlarged, and further the parasitic capacitive coupling between the capacitor 02 and the substrate 01 is reduced.
The capacitor is arranged on the back of the substrate and is connected with the main circuit on the front of the substrate, so that the occupation of a large area on the front of the substrate is avoided, the integration level of a chip is improved, the coupling interference on the main circuit is reduced, the thick metal on the back of the substrate is used as a capacitor plate, the requirements of high capacitance and high quality factors are met, the performance of the chip is improved, the system cost is reduced, and the utilization rate of internal wiring of the chip is improved.
In addition, fig. 1 and fig. 5 are schematic diagrams of the back side of a back side illumination image sensor chip according to a preferred embodiment of the present invention, and the capacitor 02 shown in the diagrams is an MIM capacitor with an insertion finger structure, which is only an implementation manner, and according to requirements of an actual capacitance value and a quality factor, an appropriate insertion index and an insertion finger manner may be adopted, and an insertion finger structure or a flat plate structure, an MIM capacitor or an MOM capacitor may also be adopted.
In summary, the back side illumination image sensor chip of the invention avoids occupying a larger area of the front side of the substrate by arranging the capacitor on the back side of the substrate and connecting the capacitor with the main circuit on the front side of the substrate, improves the integration level of the chip, reduces the coupling interference to the main circuit, realizes the requirements of high capacitance and high quality factor by using the thick metal on the back side of the substrate as the capacitor plate, improves the performance of the chip, reduces the system cost, and improves the utilization rate of the internal wiring of the chip.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive. Furthermore, it will be obvious that the word "comprising" does not exclude other elements or steps, and the word "a" or "an" does not exclude a plurality. Several elements recited in the apparatus claims may also be implemented by one element. The terms first, second, etc. are used to denote names, but not any particular order.

Claims (11)

1. A back-illuminated image sensor chip, comprising:
a semiconductor substrate having opposing front and back surfaces, wherein light enters the substrate from the back surface;
the main body circuit is arranged on the front surface of the substrate;
the capacitor is arranged on the back surface of the substrate;
the capacitor and the main circuit are connected with each other.
2. The back-illuminated image sensor chip of claim 1, wherein the substrate back side has a single layer of metal that acts as a plate of the capacitor.
3. The back-illuminated image sensor chip of claim 1, wherein the substrate back side has multiple layers of metal, wherein the thickest layer or layers of metal act as plates of the capacitor.
4. The back-illuminated image sensor chip of claim 2 or 3, wherein the metal protrudes above a surface of the back side of the substrate.
5. The back-illuminated image sensor chip of claim 2 or 3, wherein the metal is located in a recess in the back side of the substrate.
6. The back-illuminated image sensor chip of claim 5, wherein the recess extends through semiconductor material of the substrate, and an oxide layer disposed on the front side of the substrate serves as a bottom of the recess.
7. The back-illuminated image sensor chip of claim 5, wherein the sidewalls of the metal are spaced a distance from the sidewalls of the recess.
8. The back-illuminated image sensor chip of claim 1, wherein the capacitor is connected to the body circuit by a via or a trench.
9. The back-illuminated image sensor chip of claim 1, wherein the capacitor is connected to a power line metal, a ground line metal, or a signal line metal of the body circuit.
10. The back-illuminated image sensor chip of claim 1, wherein the capacitor is a finger-inserted structure or a plate structure.
11. The back-illuminated image sensor chip of claim 1, wherein the capacitor is a metal-insulator-metal capacitor or a metal-oxide-metal capacitor.
CN201911397446.1A 2019-12-30 2019-12-30 Backside illuminated image sensor chip Pending CN113130451A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911397446.1A CN113130451A (en) 2019-12-30 2019-12-30 Backside illuminated image sensor chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911397446.1A CN113130451A (en) 2019-12-30 2019-12-30 Backside illuminated image sensor chip

Publications (1)

Publication Number Publication Date
CN113130451A true CN113130451A (en) 2021-07-16

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911397446.1A Pending CN113130451A (en) 2019-12-30 2019-12-30 Backside illuminated image sensor chip

Country Status (1)

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CN (1) CN113130451A (en)

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