CN113130422A - Power module and preparation method thereof - Google Patents
Power module and preparation method thereof Download PDFInfo
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- CN113130422A CN113130422A CN202110220792.3A CN202110220792A CN113130422A CN 113130422 A CN113130422 A CN 113130422A CN 202110220792 A CN202110220792 A CN 202110220792A CN 113130422 A CN113130422 A CN 113130422A
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- packaging body
- package
- lead frame
- heat dissipation
- power module
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- 238000004806 packaging method and process Methods 0.000 claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 30
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- 239000007822 coupling agent Substances 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229920001568 phenolic resin Polymers 0.000 claims description 3
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- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
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- 239000000126 substance Substances 0.000 description 7
- 239000006087 Silane Coupling Agent Substances 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000032798 delamination Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
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- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
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- 239000004809 Teflon Substances 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The application provides a power module and a preparation method thereof, wherein the power module comprises: the heat dissipation substrate comprises a first surface and a second surface which are arranged oppositely; at least one component fixedly arranged on the first surface; the first end of the lead frame is fixedly arranged on the first surface; the first packaging body covers the at least one component and part of the first surface, and the lead frame is exposed out of the first packaging body; and the second packaging body covers the first end of the lead frame and is connected with the first packaging body. Through the mode, the probability of layering in the radiating substrate can be reduced.
Description
Technical Field
The application belongs to the technical field of packaging, and particularly relates to a power module and a preparation method thereof.
Background
The power module generally generates heat greatly, so a good heat dissipation design is required to solve the reliability problem, and a common practice in the industry is to introduce a heat dissipation substrate with good heat dissipation performance into the power module. In order to improve the heat dissipation performance of the power module, a semi-encapsulation mode is adopted at present, that is, a component and a part of lead frames on the heat dissipation substrate are encapsulated inside by a plastic encapsulation layer, and one side of the heat dissipation substrate, which is not provided with the component, is exposed.
However, in an actual packaging process, delamination may occur inside the heat dissipation substrate below the lead frame, which may reduce reliability of the power module.
Disclosure of Invention
The application provides a power module and a preparation method thereof, which are used for reducing the probability of layering inside a heat dissipation substrate.
In order to solve the technical problem, the application adopts a technical scheme that: provided is a power module including: the heat dissipation substrate comprises a first surface and a second surface which are arranged oppositely; at least one component fixedly arranged on the first surface; the first end of the lead frame is fixedly arranged on the first surface; the first packaging body covers the at least one component and part of the first surface, and the lead frame is exposed out of the first packaging body; and the second packaging body covers the first end of the lead frame and is connected with the first packaging body.
The first packaging body is a plastic packaging body, and the second packaging body is a glue packaging body.
The lead frame is positioned in the peripheral region of the at least one component, and the first end of the lead frame and the edge region of the first surface are fixed with each other; the first packaging body integrally covers the at least one component, the second packaging body is annularly arranged on the periphery of the first packaging body, and the second packaging body is in contact with the periphery of the first packaging body.
Wherein, still include: a coupling agent layer between the first and second encapsulants for connecting the first and second encapsulants.
Wherein the heat-dissipating substrate has a side surface, the side surface of the heat-dissipating substrate connecting the first surface and the second surface; the second packaging body further covers the side face of the heat dissipation substrate, a first preset distance is arranged between the side face of the heat dissipation substrate and the side face of the second packaging body on the same side, and the first preset distance is larger than or equal to a preset creepage distance.
The radiating substrate comprises a metal substrate, an insulating layer and a metal circuit layer which are sequentially stacked, wherein the metal circuit layer is fixed with the at least one component and the lead frame; wherein the thermal expansion coefficients of the first package body, the second package body, and the metal substrate are matched.
Wherein the first package body, the second package body, and the metal substrate have a coefficient of thermal expansion between 2.0 x 10-6 ppm/DEG C-2.4 x 10-6 ppm/DEG C.
The material of the metal substrate comprises aluminum; the first packaging body is made of an epoxy resin condensate; the second packaging body is made of at least one of epoxy resin cured product, amino resin cured product, phenolic resin and organic silicon resin.
In order to solve the above technical problem, another technical solution adopted by the present application is: provided is a method for manufacturing a power module, including: at least one component is fixedly arranged on the first surface of the heat dissipation substrate; forming a first packaging body on part of the first surface, wherein the first packaging body covers the at least one component; fixedly arranging a first end of a lead frame on the first surface exposed from the first packaging body; and forming a second packaging body on part of the first surface, wherein the second packaging body covers the first end.
Wherein the step of forming a first package on a portion of the first surface comprises: forming a plastic package body on part of the first surface by using a plastic package jig; the step of forming a second package on a portion of the first surface includes: and forming a glue sealing body on part of the first surface by using a glue filling jig.
The lead frame is positioned in the peripheral region of the at least one component, and the first end of the lead frame and the edge region of the first surface are fixed with each other; before the step of forming the second packaging body on the part of the first surface, the method comprises the following steps: coating a coupling agent on the peripheral side face of the first packaging body; the step of forming a second package on a portion of the first surface includes: and forming a second annular packaging body on the periphery of the first packaging body, wherein the second packaging body is connected with the periphery of the first packaging body through the coupling agent.
Different from the prior art, the beneficial effects of this application are: the power module comprises a heat dissipation substrate, wherein at least one component and a lead frame are arranged on a first surface of the heat dissipation substrate; and the first packaging body in the power module does not cover the lead frame, and the second packaging body covers the first end of the lead frame. Compared with the mode in the background technology, the mode avoids the situation that the first end of the lead frame has tensile force or pressure effect on the heat dissipation substrate in the process of forming the first packaging body, further reduces the probability of layering inside the heat dissipation substrate, and improves the reliability of the power module.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without inventive efforts, wherein:
fig. 1 is a schematic structural diagram of an embodiment of a power module according to the present application;
FIG. 2 is a schematic top view of one embodiment of the power module of FIG. 1;
FIG. 3 is a schematic flow chart illustrating an embodiment of a method for manufacturing a power module according to the present disclosure;
FIG. 4a is a schematic structural diagram of an embodiment corresponding to step S101 in FIG. 3;
FIG. 4b is a schematic structural diagram of an embodiment corresponding to step S102 in FIG. 3;
fig. 4c is a schematic structural diagram of an embodiment corresponding to step S103 in fig. 3.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an embodiment of a power module according to the present application, where the power module includes a heat dissipation substrate 10, at least one component 12, a lead frame 14, a first package 16, and a second package 18.
Specifically, the heat dissipation substrate 10 includes a first surface 1000 and a second surface 1002 that are opposite to each other, and the heat dissipation substrate 10 further includes a side surface 1004, and the side surface 1004 of the heat dissipation substrate 10 is connected to the first surface 1000 and the second surface 1002. In this embodiment, the heat dissipation substrate 10 may include a metal substrate 100, an insulating layer 102, and a patterned metal circuit layer 104, which are stacked; the patterned metal circuit layer 104 may be made of copper, and a surface of the patterned metal circuit layer facing away from the insulating layer 102 is the first surface 1000 of the heat dissipation substrate 10. The thermal conductivity of the insulating layer 102 may be 1.0W/mK-12.0W/mK (e.g., 5W/mK, 10W/mK, etc.), which may include an epoxy matrix, and a filler doped in the epoxy matrix, wherein the filler may be at least one of silicon dioxide, aluminum oxide, boron nitride, aluminum nitride, and silicon carbide, and the thickness of the insulating layer 102 may be between 0.05mm-0.3 mm. For example, the thickness of the insulating layer 102 may be 0.1mm, 0.2mm, or the like. The surface of the side of the metal substrate 100 away from the insulating layer 102 is a second surface 1002 of the heat sink base plate 10, and the metal substrate 100 may be made of aluminum, copper, or the like; among them, the aluminum-based metal substrate 100 has advantages of low cost and light weight. However, aluminum is easily corroded by ions in a humid environment, and the metal substrate 100 made of aluminum may be oxidized in order to reduce the possibility of corrosion of aluminum by ions in a humid environment. That is, the second surface 1002 of the heat dissipating substrate 10 may be a metal surface (e.g., an aluminum surface) or a metal oxide surface (e.g., an aluminum oxide surface).
At least one component 12 and at least one lead frame 14 are fixedly disposed on the first surface 1000 of the heat dissipation substrate 10, for example, the component 12 and the lead frame 14 may be disposed on the patterned metal circuit layer 104 of the heat dissipation substrate 10 by solder bonding. The components 12 may be active devices (e.g., chips, wafers, etc.) or passive devices (e.g., resistors, capacitors, etc.). When some components 12 need to be electrically connected, the electrical connection may be performed by wire bonding, and the material of the specific wire may be at least one of aluminum, copper, and gold. In addition, in the present embodiment, the lead frame 14 may be disposed in the peripheral region of all the components 12, for example, all the components 12 are located at a non-edge position of the heat dissipation substrate 10, the first end 140 of the lead frame 14 may be soldered to the edge position of the heat dissipation substrate 10, and the second end 142 of the lead frame 14 extends and protrudes from the side 1004 of the heat dissipation substrate 10. The second end 142 of the lead frame 14 then corresponds to a pin through which an electrical connection is made between the power module and other circuit devices.
The first package 16 covers at least one component 12 and a portion of the first surface 1000, for example, the portion of the first surface 1000 may be located around the component 12 and is a non-edge region; while the first package body 16 does not cover the lead frame 14, i.e., the lead frame 14 is exposed from the first package body 16. The protection of the bonding position of the lead frame 14 and the heat sink substrate 10 can be achieved by the second package 18, specifically, the second package 18 covers the first end 140 of the lead frame 14 and connects to the first package 16.
In the above design manner, the first package body 16 and the second package body 18 which are different from each other are introduced to respectively package and protect the component 10 and the lead frame 14, and compared with the manner in the background art, the manner prevents the first end of the lead frame 14 from generating a tensile force or a pressure effect on the heat dissipation substrate 10 in the process of forming the first package body 16, so that the probability of layering inside the heat dissipation substrate 10 is reduced, and the reliability of the power module is improved.
In one embodiment, the first package 16 is a plastic package, and the material thereof may be epoxy resin, which can be formed by a plastic package jig; the second package 18 is a glue package, and the material of the second package can be at least one of epoxy resin cured material, amino resin cured material, phenolic resin, and organic silicon resin, and the second package can be formed by a glue filling jig. In the prior art, the whole plastic package body is generally adopted to plastic package all the components 12 and the first ends 140 of the lead frames 14; in the plastic packaging process, the second end 142 of the lead frame 14 is tilted or pressed down by the mold clamping pressure of the plastic packaging jig, so that the welding position between the first end 140 of the lead frame 14 and the first surface 1000 is subjected to corresponding pulling force or pressure; since the temperature of the molding process is high, for example, the molding temperature is generally 180 ℃, the insulating layer 102 inside the heat dissipation substrate 10 may soften at the temperature, and thus may easily delaminate from other layers inside the heat dissipation substrate 10 under the action of the tensile force or the pressure. In the design method adopted by the present application, since the first package body 16 does not cover the lead frame 14, in the process of forming the first package body 16 by using the plastic package jig, no tensile force or pressure is generated on the lead frame 14, and the heat dissipation substrate 10 below the lead frame 14 is not affected by the plastic package temperature, so that the probability of internal delamination of the heat dissipation substrate 10 in the process of forming the first package body 16 is greatly reduced. In addition, since the second package 18 is a glue package, when the lead frame 14 is protected by the glue filling jig, the lead frame 14 is not subjected to tensile force or pressure like a plastic package process, so that the probability of internal delamination of the heat dissipation substrate 10 during the formation of the second package 16 is greatly reduced. Of course, in other embodiments, the first package 16 and the second package 18 can be both glue packages, and the materials of the two glue packages can be the same or different.
In the present embodiment, please refer to fig. 1 and fig. 2 together, and fig. 2 is a schematic top view of an embodiment of the power module in fig. 1. The lead frame 14 is located at the peripheral region of at least one component 12, and the first end 140 of the lead frame 14 and the edge region of the first surface 1000 are fixed to each other; the first package 16 covers the at least one component 12 in an integrally molded manner, that is, the first package 16 may continuously cover the at least one component 12 and a portion of the first surface 1000 around the component 12, and the first package 16 covering the at least one component 12 and a portion of the first surface 1000 around the component 12 is an integral body and is integrally molded. The second package 18 is annularly disposed on the periphery of the first package 16, and the second package 18 contacts the outer side of the first package 16; similarly, in the present embodiment, the second package 18 located at the periphery of the first package 16 is a whole and is integrally formed. The first package 16 and the second package 18 are designed in a manner that the bonding positions of the component 12 and the lead frame 14 in the power device can be well fixed and protected, so as to improve the stability of the power device.
In addition, in the present embodiment, a surface of the second package 18 facing away from the heat dissipation substrate 10 is flush with a surface of the first package 16 facing away from the heat dissipation substrate 10. The design mode can enable the surface of the whole power device to be smooth. Of course, in other embodiments, the surface of the second package 18 facing away from the heat dissipation substrate 10 may also be slightly lower than the surface of the first package 16 facing away from the heat dissipation substrate 10. The design mode can reduce the cost for preparing the power device.
Further, in order to improve the interfacial bonding force between the first package 16 and the second package 18, the power device provided in the present application further includes a coupling agent layer (not shown); among them, the coupling agent layer may be formed of a silane coupling agent, for example, an aminosilane coupling agent or the like; the coupling agent layer is located between the first package 16 and the second package 18 for connecting the first package 16 and the second package 18. The silane coupling agent molecules forming the coupling agent layer are generally of the formula Y-R-Si (OR)3Wherein Y represents an organic functional group, Si (OR)3Represents a siloxy group. Siloxy Si (OR)3The organic functional group Y is reactive with inorganic substances and reactive or compatible with organic substances. Generally, when forming the first package 16, in order to facilitate the separation between the first package 16 and the molding jig, the first package 16 is exposedThe surface is flat, and some release wax is added to the first package 16. When the silane coupling agent is interposed between the first package 16 and the second package 18, a silane oxygen group in the silane coupling agent may react with the mold release wax in the first package 16, and an organic functional group Y in the silane coupling agent may react with an organic substance in the second package 18, so that the first package 16 and the second package 18 are connected by a chemical bond, thereby improving the bonding force between interfaces and improving the reliability of the power module.
In addition, referring to fig. 1 and fig. 2 again, in addition to the second package 18 covering the portion of the first surface 1000 and the first end 140 of the lead frame 14 on the first surface 1000, the second package 18 may further cover the side 1004 of the heat dissipation substrate 10, and a first predetermined distance d1 is formed between the side 1004 of the heat dissipation substrate 10 and the side 1800 of the second package 18 on the same side, where the first predetermined distance d1 is greater than or equal to the predetermined creepage distance. The creepage distance is the shortest path between two conductive parts or between a conductive part and an equipment protection interface measured along the insulating surface; that is, in various use cases, the insulating material around the conductor (e.g., the lead frame 14 in the present embodiment) exhibits a charging phenomenon due to the insulating material being electrically polarized. In the present embodiment, the predetermined creepage distance may be 2mm or the like. The above design may utilize the second package 18 for insulation protection to further improve the electrical performance of the whole power module.
In addition, in other embodiments, in some cases where the integration requirement is high, the first package 16 may further cover the second surface 1002 of the heat dissipation substrate 10 at the position of the at least one component 12, which is not limited in this application.
In general, the ambient temperature of the power module is not constant, and in order to improve the reliability of the power module in the cold and hot working processes, the thermal expansion coefficients of the first package 16, the second package 18 and the metal substrate 100 of the heat dissipation substrate 10 in the power device provided by the present application are matched; the meaning of matching here means that the thermal expansion coefficients of the first package body 16, the second package body 18 and the metal substrate 100 are not only the thermal expansion coefficientsIn the same order of magnitude and in close proximity. For example, assume that the first package 16 has a coefficient of thermal expansion a1 x 10-nppm/DEG C, the thermal expansion coefficient of the second packaging body 18 is a2 x 10-nppm/DEG C, the coefficient of thermal expansion of the metal substrate 1000 is a3 x 10-nppm/deg.C, then a1 and a2 are in the range of (a3 + -b); wherein, the b value can be 0.2, 0.3, 0.4, etc. Of course, for other layer structures in the heat dissipation substrate 10, such as the patterned metal circuit layer 104 and the insulating layer 102, materials matching the thermal expansion coefficient of the metal substrate 100 may also be selected, so as to further improve the reliability of the entire power module during the cold and hot operation.
In one application scenario, the thermal expansion coefficient of the first package 16, the second package 18 and the metal substrate 100 is 2.0 × 10-6ppm/℃-2.4*10-6Between ppm/DEG C. This design makes it easier to obtain the materials of the first package 16, the second package 18 and the metal substrate 100. Of course, in other embodiments, the coefficients of thermal expansion of the first package 16, the second package 18, and the metal substrate 100 may be in other ranges. Specifically, when the materials of the first package 16, the second package 18 and the metal substrate 100 are selected, one of the materials may be fixed, and then the other materials may be selected according to the thermal expansion coefficient of the material. For example, the material of the metal substrate 100 is selected, and then the material of the first package 16 and the material of the second package 18 are selected according to the thermal expansion coefficient of the metal substrate 100.
Optionally, the material of the metal substrate 100 includes aluminum. The material of the first package 16 includes a cured epoxy resin; of course, other substances may also be included in the first package 16, such as release wax; in order to reduce the influence of other substances on the thermal expansion coefficient of the first package body 16, the content of other substances may be set within a small range. The material of the second package 18 includes at least one of an epoxy resin cured product, an amino resin cured product, a phenol resin, and a silicone resin. The selected materials of the first package 16 and the second package 18 not only have thermal expansion coefficients close to that of the metal substrate 100, but also have the advantages of good insulating property, high temperature resistance, corrosion resistance and the like, and can further improve the stability of the power device.
The power module provided by the present application is further described below in terms of a method of manufacture. Referring to fig. 3, fig. 3 is a schematic flow chart of an embodiment of a method for manufacturing a power module according to the present application, the method specifically includes:
s101: at least one component 12 is fixedly disposed on the first surface 1000 of the heat-dissipating substrate 10.
Specifically, referring to fig. 4a, fig. 4a is a schematic structural diagram of an embodiment corresponding to step S101 in fig. 3. The heat dissipation substrate 10 may include a metal substrate 100, an insulating layer 102, and a patterned metal circuit layer 104, which are sequentially stacked, wherein the first surface 1000 of the heat dissipation substrate 10 may be a surface of the patterned metal circuit layer 104, and the process of implementing the step S101 may be: solder (e.g., solder paste, etc.) is printed on certain areas of the metal circuit layer 104, at least one component 12 is attached to the corresponding position, and the component 12 and the metal circuit layer 104 are fixed by reflow. Of course, in some cases, there may be a connection relationship between some components 12, and between the step S101 and the step S102, the following steps may be further included: establishing connection between the components 12 to be connected by using a wire bonding mode on the side of the components 12 away from the metal circuit layer 104; the specific material of the lead may be gold, silver, copper, etc.
S102: a first encapsulant 16 is formed over a portion of the first surface 1000, the first encapsulant 16 covering the at least one component 12.
Specifically, please refer to fig. 4b, wherein fig. 4b is a schematic structural diagram of an embodiment corresponding to step S102 in fig. 3. The specific implementation process of step S102 may be: placing the semi-finished product obtained in the step S101 in a plastic packaging jig for a high-temperature plastic packaging process to form a plastic package body (i.e., a first package body 16); however, the edge position on the heat dissipation substrate 10 is exposed from the mold tool during the molding process, that is, the first package 16 only covers at least one component 12, and does not cover the position of the lead frame 14 to be soldered. In addition, the first package 16 may not cover the second surface 1002 of the heat dissipation substrate 10, so as to improve the heat dissipation effect of the entire power module.
Alternatively, in this embodiment, the material of the first package 16 may be a cured epoxy resin, and the molding temperature in the molding process may be 180 ℃, and the molding time may be 120 s.
S103: the first end 140 of the lead frame 14 is fixedly disposed on the first surface 1000 exposed from the first package body 16.
Specifically, please refer to fig. 4c, wherein fig. 4c is a schematic structural diagram of an embodiment corresponding to step S103 in fig. 3. The first surface 1000 of the heat dissipation plate 10 may be a surface of the patterned metal circuit layer 104, and the process of implementing the step S103 may be: solder (e.g., solder paste, etc.) is printed on certain areas of metal trace layer 104, then first end 140 of leadframe 14 is attached to the corresponding location, and first end 140 of leadframe 14 and metal trace layer 104 are attached by reflow. Preferably, solder may be printed on the edge area of the metal circuit layer 104, and then the first segment 140 of the lead frame 14 is reflowed and fixed to the edge area of the metal circuit layer 104.
S104: the second package 18 is formed on a portion of the first surface 1000, the second package 18 covering the first end 140.
Specifically, referring to fig. 1 again, the implementation process of the step S104 may be: a glue seal (i.e., the second package 18) is formed on a portion of the first surface 1000 by using a glue filling jig. In this embodiment, the mold cavity of the glue filling jig may be made of a material such as teflon which is not easy to adhere to glue, so that after the second package 18 is formed, the second package 18 is easily separated from the glue filling jig. The material for forming the second package 18 may be at least one of an epoxy resin cured product, an amino resin cured product, a phenol resin, and a silicone resin.
In addition, in the present embodiment, the lead frame 14 is located in the peripheral region of at least one component 12, and the first end 140 of the lead frame 14 and the edge region of the first surface 1000 are fixed to each other; correspondingly, the second package 18 may be annularly disposed on the periphery of the first package 16, and the second package 18 may further cover the side 1004 of the heat dissipating substrate 10.
Further, in order to improve the interface bonding force between the first package 16 and the second package 18, before the step S104, the method further includes: a coupling agent, which may be a silane coupling agent or the like, is coated on the peripheral side surface of the first package body 16. The step S104 specifically includes: a ring-shaped second package 18 is formed on the periphery of the first package 16, and the second package 18 and the periphery of the first package 16 are connected by a coupling agent. Optionally, in this embodiment, a surface of the second package 18 facing away from the heat dissipation substrate 10 may be flush with a surface of the first package 16 facing away from the heat dissipation substrate 10; alternatively, the surface of the second package 18 facing away from the heat dissipation substrate 10 may be slightly lower than the surface of the first package 16 facing away from the heat dissipation substrate 10.
Furthermore, after the step S104, the method may further include: and (5) cutting ribs and shaping the whole obtained in the step (S104) to obtain a final power module.
In summary, the power module provided by the present application includes a heat dissipation substrate 10, a first surface 1000 of the heat dissipation substrate 10 is provided with at least one component 12 and a lead frame 14; and the first package 16 in the power module does not cover the lead frame 14 and the second package 18 covers the first end 140 of the lead frame 14. Compared with the method in the background art, the method avoids the tensile force or pressure action of the first end 140 of the lead frame 14 on the heat dissipation substrate 10 in the process of forming the first package body 16, so that the probability of layering inside the heat dissipation substrate 10 is reduced, and the reliability of the power module is improved. Preferably, the first package 16 is a plastic package, the second package 18 is a glue package, and the lead frame 14 is not fixed to the heat dissipation substrate 10 during the process of forming the first package 16. In addition, a coupling agent layer may be further disposed at an interface between the first package 16 and the second package 18, and the wettability of the material of the second package 18 on the surface of the first package 16 may be improved by the coupling agent layer, so that the interface bonding force between the first package 16 and the second package 18 is high, and the reliability of the power module is improved. In addition, the thermal expansion coefficients of the metal substrate 100 in the first package 16, the second package 18 and the heat dissipation module 10 are relatively close, and this design manner can improve the reliability of the entire power module in the cold and hot working processes.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings, or which are directly or indirectly applied to other related technical fields, are intended to be included within the scope of the present application.
Claims (11)
1. A power module, comprising:
the heat dissipation substrate comprises a first surface and a second surface which are arranged oppositely;
at least one component fixedly arranged on the first surface;
the first end of the lead frame is fixedly arranged on the first surface;
the first packaging body covers the at least one component and part of the first surface, and the lead frame is exposed out of the first packaging body;
and the second packaging body covers the first end of the lead frame and is connected with the first packaging body.
2. The power module of claim 1,
the first packaging body is a plastic packaging body, and the second packaging body is a glue packaging body.
3. The power module of claim 1,
the lead frame is positioned in the peripheral area of the at least one component, and the first end of the lead frame and the edge area of the first surface are fixed with each other;
the first packaging body integrally covers the at least one component, the second packaging body is annularly arranged on the periphery of the first packaging body, and the second packaging body is in contact with the periphery of the first packaging body.
4. The power module of claim 3, further comprising:
a coupling agent layer between the first and second encapsulants for connecting the first and second encapsulants.
5. The power module of claim 3,
the heat dissipation substrate is provided with a side face, and the side face of the heat dissipation substrate is connected with the first surface and the second surface;
the second packaging body further covers the side face of the heat dissipation substrate, a first preset distance is arranged between the side face of the heat dissipation substrate and the side face of the second packaging body on the same side, and the first preset distance is larger than or equal to a preset creepage distance.
6. The power module of claim 1,
the heat dissipation substrate comprises a metal substrate, an insulating layer and a metal circuit layer which are sequentially stacked, and the metal circuit layer is fixed with the at least one component and the lead frame;
wherein the thermal expansion coefficients of the first package body, the second package body, and the metal substrate are matched.
7. The power module of claim 6,
the first package body, the second package body and the metal substrate have a coefficient of thermal expansion of 2.0 x 10-6ppm/℃-2.4*10-6Between ppm/DEG C.
8. The power module of claim 7,
the material of the metal substrate comprises aluminum;
the first packaging body is made of an epoxy resin condensate;
the second packaging body is made of at least one of epoxy resin cured product, amino resin cured product, phenolic resin and organic silicon resin.
9. A method of manufacturing a power module, comprising:
at least one component is fixedly arranged on the first surface of the heat dissipation substrate;
forming a first packaging body on part of the first surface, wherein the first packaging body covers the at least one component;
fixedly arranging a first end of a lead frame on the first surface exposed from the first packaging body;
and forming a second packaging body on part of the first surface, wherein the second packaging body covers the first end.
10. The production method according to claim 9,
the step of forming a first package on a portion of the first surface comprises: forming a plastic package body on part of the first surface by using a plastic package jig;
the step of forming a second package on a portion of the first surface includes: and forming a glue sealing body on part of the first surface by using a glue filling jig.
11. The method for manufacturing a semiconductor device according to claim 9, wherein the lead frame is located in a peripheral region of the at least one component, and the first end of the lead frame and an edge region of the first surface are fixed to each other;
before the step of forming the second packaging body on the part of the first surface, the method comprises the following steps: coating a coupling agent on the peripheral side face of the first packaging body;
the step of forming a second package on a portion of the first surface includes: and forming a second annular packaging body on the periphery of the first packaging body, wherein the second packaging body is connected with the periphery of the first packaging body through the coupling agent.
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