CN113130377A - Method for reducing beak width of silicon local oxidation layer - Google Patents
Method for reducing beak width of silicon local oxidation layer Download PDFInfo
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- CN113130377A CN113130377A CN202110401023.3A CN202110401023A CN113130377A CN 113130377 A CN113130377 A CN 113130377A CN 202110401023 A CN202110401023 A CN 202110401023A CN 113130377 A CN113130377 A CN 113130377A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
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Abstract
The invention provides a method for reducing the beak width of a local silicon oxide layer, which comprises the following steps: providing a substrate, and forming an etching barrier layer on the substrate; forming an opening in the etching barrier layer to obtain a pretreatment structure, wherein the substrate is exposed out of the opening; performing thermal oxidation treatment on the pretreatment structure to form a silicon local oxidation layer with initial thickness on the surface of the substrate exposed by the opening, wherein the silicon local oxidation layer extends to the bottom of the etching barrier layer to form a bird's beak, and the initial thickness is greater than the target thickness of the silicon local oxidation layer; removing the etching barrier layer; and carrying out wet etching on the silicon local oxide layer to adjust the thickness of the silicon local oxide layer to the target thickness, wherein the bird's beak width is reduced in the process. Through the improved process design, the invention can effectively reduce the width of the bird's beak, is beneficial to improving the performance of the device and is beneficial to further reducing the size of the device.
Description
Technical Field
The invention relates to the field of integrated circuit manufacturing, in particular to a method for reducing the bird's beak width of a silicon local oxide layer.
Background
In the 0.18um and above technology node processes, LOCOS (Local Oxidation of Silicon Local Oxidation) is often used as device isolation. The specific preparation process of the LOCOS comprises the steps of depositing an etching barrier layer with a certain thickness on the surface of a silicon wafer, removing the etching barrier layer of a LOCOS region to be formed by utilizing photoetching and etching processes, and growing an oxide layer in a region which is not covered by the etching barrier layer in a thermal oxidation mode to form the LOCOS with the required thickness. During the thermal oxidation process, the oxide layer may extend inward along the edge of the etching barrier layer to form a bird's beak (called "bird's beak effect"), and the lateral extension of the bird's beak will consume a certain active area, resulting in an increase in device size and performance degradation. With the shrinking of the feature size of the device and the increasing of the integration level of the device, the use of LOCOS is increasing, but the bird's beak effect severely limits the further shrinking of the device size.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a method for reducing the bird's beak width of a local oxidation layer of silicon, which is used to solve the problems of increased device size and performance degradation caused by the bird's beak formed by the oxide layer extending inwards along the edge of silicon nitride during the thermal oxidation process for preparing local oxidation of silicon (LOCOS) during the thermal oxidation process for preparing LOCOS.
To achieve the above and other related objects, the present invention provides a method for reducing a bird's beak width of a local oxide layer of silicon, comprising the steps of:
providing a substrate, and forming an etching barrier layer on the substrate;
forming an opening in the etching barrier layer to obtain a pretreatment structure, wherein the substrate is exposed out of the opening;
performing thermal oxidation treatment on the pretreatment structure to form a silicon local oxidation layer with initial thickness on the surface of the substrate exposed by the opening, wherein the silicon local oxidation layer extends to the bottom of the etching barrier layer to form a bird's beak, and the initial thickness is greater than the target thickness of the silicon local oxidation layer;
removing the etching barrier layer;
and carrying out wet etching on the silicon local oxide layer to adjust the thickness of the silicon local oxide layer to the target thickness, wherein the bird's beak width is reduced in the process.
Optionally, the thermal oxidation treatment is performed in a furnace tube device, and the temperature in the thermal oxidation process is 800 ℃ to 1000 ℃.
More optionally, the thermal oxidation is dry oxygen oxidation.
Optionally, the thickness of the etching barrier layer is 400 to 600 angstroms.
Optionally, the difference between the initial thickness and the target thickness is 10% to 50%.
More optionally, the initial thickness is 1500 angstroms to 3000 angstroms.
Optionally, the initial thickness is 2000 angstroms and the target thickness is 1600 angstroms.
Optionally, the method for reducing the bird's beak width of the local silicon oxide layer further includes a step of forming a liner oxide layer on the surface of the substrate before forming the etch stop layer, where the etch stop layer is formed on the surface of the liner oxide layer.
More optionally, after the etching barrier layer is formed, the etching barrier layer is etched by using a dry etching process to form an upper opening in the etching barrier layer, and then the liner oxide layer in the upper opening is removed by using a wet etching process to expose the substrate.
Optionally, the thickness of the pad oxide layer is 100 to 200 angstroms, and the method for forming the pad oxide layer includes wet oxidation.
Optionally, removing the etching barrier layer by using a hot phosphoric acid solution, wherein the volume percentage concentration of the hot phosphoric acid solution is 85-88%, and the temperature is 155-165 ℃;
and performing wet etching on the silicon local oxide layer by adopting a hydrofluoric acid solution to adjust the silicon local oxide layer to the target thickness, and adjusting the bird beak width in the process, wherein the volume ratio of hydrofluoric acid to water in the hydrofluoric acid solution is 150: 1-100: 1.
As described above, the method for reducing the bird's beak width of the local oxide layer of silicon according to the present invention has the following beneficial effects: through the improved process design, the invention can effectively reduce the width of the bird's beak, is beneficial to improving the performance of the device and is beneficial to further reducing the size of the device.
Drawings
Fig. 1 to 4 are schematic views illustrating a process for preparing a silicon partial oxide layer in the prior art.
FIG. 5 is a flow chart of a method for reducing the bird's beak width of a silicon local oxide layer provided by the present invention.
Fig. 6 to 10 are schematic structural diagrams showing steps of a method for reducing the bird's beak width of a local oxide layer of silicon according to an embodiment of the invention.
Fig. 11 is a graph comparing the bird's beak width of a silicon local oxide layer prepared by the method of the present invention with the bird's beak width of a silicon local oxide layer prepared by a conventional method.
Fig. 12 to 16 are schematic structural diagrams showing the steps of the method for reducing the bird's beak width of the local oxide layer of silicon according to the second embodiment of the invention.
Description of the element reference numerals
11 substrate
12 etch stop layer
13 local oxide layer of silicon
14 photoresist layer
21 substrate
22 etch stop layer
23 silicon partial oxide layer
24 liner oxide layer
25 photoresist layer
26 opening
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 16. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Local Oxidation of Silicon (LOCOS) is a commonly used device isolation process. The manufacturing process generally includes depositing an etch stop layer 12 with a certain thickness on the surface of a substrate 11 (generally, a silicon wafer), coating a photoresist layer 14 on the surface of the etch stop layer 12, defining a region a (refer to fig. 1 and 2) to be thermally oxidized by photolithography, growing an oxide layer with a desired thickness on the region not covered by the etch stop layer 12 by thermal oxidation to form a local oxide layer 13 (refer to fig. 3), and removing the residual etch stop layer 12 by a dry etching process (refer to fig. 4). In the thermal oxidation process, the oxide layer extends inwards along the edge of the etching barrier layer to form a bird's beak, and the lateral extension of the bird's beak consumes a certain active area, so that the size of the device is increased and the performance is reduced. Especially, the larger the thickness h1 of the silicon local oxide layer, the longer the width d1 of the bird's beak, which severely limits the further reduction of the device size. For this purpose, the invention proposes an improvement.
Example one
As shown in fig. 5 to 10, the present invention provides a method for reducing the bird's beak width of a local oxide layer of silicon, comprising the steps of:
s1: providing a substrate 21, and forming an etching barrier layer 22 on the substrate 21;
s2: forming an opening 26 in the etch stop layer 22 to obtain a pre-processed structure, wherein the substrate 21 is exposed by the opening 26, and a position corresponding to the opening 26 is a position where a silicon local oxide layer 23 is to be formed subsequently, as shown in fig. 6 and 7;
s3: performing thermal oxidation treatment on the preprocessed structure (i.e., the structure obtained in step S2) to form a local silicon oxide layer 23 with an initial thickness h2 on the surface of the substrate 21 exposed by the opening 26, where the local silicon oxide layer 23 extends toward the bottom of the etch stop layer 22 to form a bird' S beak with an initial width d2, and the initial thickness is greater than the target thickness of the local silicon oxide layer 23, as shown in fig. 8;
s4: removing the etching barrier layer 22 (shown with reference to fig. 9);
s5: the local silicon oxide layer 23 is wet etched to adjust the thickness of the local silicon oxide layer 23 to the target thickness h3, in this process, the beak width is reduced from the initial width d2 to d3, as shown in fig. 10. This is because the wet etching is an isotropic etching, that is, the etching rate is the same for all directions of the device surface, so that the bird's beak part is also etched during the wet etching of the silicon partial oxide layer 23, and the bird's beak can be etched first because the thickness of the bird's beak is relatively smaller, so that the width of the bird's beak is reduced.
Through the improved process design, the invention can effectively reduce the width of the bird's beak, is beneficial to improving the performance of the device and is beneficial to further reducing the size of the device.
As an example, the substrate 21 may be a silicon wafer, a silicon-on-insulator (SOI), a germanium or silicon-germanium material layer; the etch stop layer 22 includes, but is not limited to, one or a combination of a silicon nitride layer and a titanium nitride layer, and the method of forming the etch stop layer 22 includes, but is not limited to, a vapor deposition method.
As an example, the method of forming the etching stop layer 22 to expose the substrate 21 is preferably a photolithographic etching method, such as coating a photoresist layer 25 on the surface of the etching stop layer 22, developing by exposure to light to define the position and shape of the opening, and etching the opening to expose the surface of the substrate 21 by a dry method (such as using CF4/CHF3 gas) or a wet method (such as using hot phosphoric acid).
As an example, the thermal oxidation process of step S3 is performed in a furnace apparatus, and the temperature during the thermal oxidation process is 800 to 1000 ℃. In a preferred example, the thermal oxidation is dry oxygen oxidation, i.e., the surface of the substrate 21 is oxidized by a gas such as oxygen into a furnace. Although the dry oxygen oxidation rate is relatively slow, the quality of the grown oxide layer is good, and the performance of the device is improved.
In one example, the etch stop layer 22 has a thickness of 400 a to 600 a (unless otherwise specified, the description of the numerical range includes endpoints in the specification), such as 400 a, 500 a, 600 a or any value in the range, but preferably 500 a, which can serve as a good etch stop and can be formed in a short time and removed by subsequent etching.
Theoretically, if the thickness of the silicon local oxide layer 23 is much greater than the target thickness, the beak width can be adjusted to be close to zero during the subsequent adjustment to the target thickness. However, in the actual process, the initial thickness needs to be carefully designed in consideration of various factors such as various process times and the like. If the initial thickness is not much different from the target thickness, the substrate 21 is easily damaged during the subsequent wet etching thickness adjustment, but if the difference is too large, the etching rate is difficult to control accurately (as the etching continues, the solubility of the etching solution changes, the impurities in the etching solution increase, and these factors affect the etching rate), and the etching time is lengthened. The inventor finds through a large amount of experiments that the difference between the initial thickness and the target thickness is preferably 10% to 50% (the initial thickness is 10% to 50% greater than the target thickness), and more preferably 20% to 30%. In a preferred example, the initial thickness is 1500 angstroms to 3000 angstroms. More preferably, the initial thickness is 2000 angstroms and the target thickness is 1600 angstroms.
In a preferred example, the etching barrier layer 22 is a silicon nitride layer, and thus in step S4, the etching barrier layer is preferably removed by a wet etching process, and more preferably, the etching barrier layer 22 is removed by a hot phosphoric acid solution, wherein the hot phosphoric acid solution has a concentration of 85% to 88% by volume and a temperature of 155 ℃ to 165 ℃.
As an example, the silicon local oxide layer 23 is wet-etched by using a hydrofluoric acid solution to adjust the silicon local oxide layer 23 to the target thickness, and the bird's beak width is adjusted in the process, wherein a volume ratio of hydrofluoric acid to water in the hydrofluoric acid solution is 150: 1-100: 1.
The inventors have experimentally verified the method of the present invention, and the verification results are shown in fig. 11. In a comparison experiment, when a 1600 angstrom silicon local oxide layer is prepared by adopting the method in the prior art, the bird's beak width is about 285nm, but when the method provided by the invention is adopted, a 2000 angstrom silicon local oxide layer is prepared firstly, and then is adjusted to 1600 angstrom by wet etching, the bird's beak width is reduced to about 245 nm. In another comparison experiment, when the silicon local oxide layer of 1600 angstroms is prepared by the method in the prior art, the bird's beak width is about 265nm, whereas when the silicon local oxide layer of 2000 angstroms is prepared by the method provided by the invention, the bird's beak width is reduced to about 225nm after the silicon local oxide layer is adjusted to 1600 angstroms by wet etching (the growth conditions of the silicon local oxide layer in the same comparison experiment are the same). The method of the invention can effectively reduce the width of the bird's beak, is beneficial to improving the performance of the device and is beneficial to further reducing the size of the device.
Example two
As shown in fig. 12 to 16, the present invention also provides another method for reducing the bird's beak width of the local oxide layer of silicon. The main difference between the present embodiment and the first embodiment is that in the first embodiment, the etching stop layer 22 is directly formed on the surface of the substrate 21, and then the opening exposing the surface of the substrate 21 is formed in the etching stop layer 22. The method for reducing the bird's beak width of the local oxide layer of silicon of this embodiment further includes the step of forming a liner oxide layer 24 on the surface of the substrate 21 before forming the etch stop layer 22, wherein the etch stop layer 22 is formed on the surface of the liner oxide layer 24; then, the etching barrier layer 22 is etched by using a dry etching process to form an upper opening in the etching barrier layer 22, then, with the remaining etching barrier layer 22 as a mask, the liner oxide layer 24 in the upper opening is removed by using a wet etching process (for example, wet etching is performed by using hydrofluoric acid with a volume percentage concentration of less than 5%, preferably within 1%) to expose the substrate 21 (refer to fig. 12 and 13), then, thermal oxidation is performed to form the silicon local oxide layer 23 (refer to fig. 14), then, the remaining etching barrier layer 22 is removed, and the remaining liner oxide layer 24 is removed in a process of adjusting the thickness of the silicon local oxide layer 23 to the target thickness (refer to fig. 15), so that the bird's beak width can be effectively reduced (the bird's beak width is reduced from the initial d2 to d 3). Except for this difference, the process for processing the corresponding film layer in this embodiment is substantially the same as that in the first embodiment, and specific reference may be made to the description in the first embodiment, which is not repeated for brevity. In this embodiment, the liner oxide layer 24 is formed before the etch stop layer 22 is formed on the surface of the substrate 21, and the liner oxide layer 24 can perform better adhesion and buffer functions, reduce the stress between the etch stop layer 22 and the substrate 21, and protect the substrate 21.
Illustratively, the thickness of the pad oxide layer 24 is 100 to 200 angstroms, and the method of forming the pad oxide layer 24 includes wet oxygen oxidation. The wet oxygen oxidation process can also be carried out in a furnace tube apparatus, for example, by introducing steam into the furnace tube apparatus. The required liner oxide layer is quickly formed by wet oxygen oxidation, and the formed oxide layer is easy to remove (for example, hydrofluoric acid with lower concentration can be used for removing, so that the damage to the substrate is avoided), so that the process time is favorably shortened, and the equipment output efficiency is improved. Except for the above differences, the materials and the processes of other parts including the same functional layer are the same, for example, the etching barrier layer 22 is preferably a silicon nitride layer, and the etching barrier layer is preferably a thermal phosphoric acid etching, and the like, which are not described in detail again.
In summary, the present invention provides a method for reducing the bird's beak width of a local oxide layer of silicon, comprising the steps of: providing a substrate, and forming an etching barrier layer on the substrate; forming an opening in the etching barrier layer to obtain a pretreatment structure, wherein the substrate is exposed out of the opening; performing thermal oxidation treatment on the pretreatment structure to form a silicon local oxidation layer with initial thickness on the surface of the substrate exposed by the opening, wherein the silicon local oxidation layer extends to the bottom of the etching barrier layer to form a bird's beak, and the initial thickness is greater than the target thickness of the silicon local oxidation layer; removing the etching barrier layer; and carrying out wet etching on the silicon local oxide layer to adjust the thickness of the silicon local oxide layer to the target thickness, wherein the bird's beak width is reduced in the process. Through the improved process design, the invention can effectively reduce the width of the bird's beak, is beneficial to improving the performance of the device and is beneficial to further reducing the size of the device. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A method of reducing the beak width of a local oxide layer of silicon, comprising the steps of:
providing a substrate, and forming an etching barrier layer on the substrate;
forming an opening in the etching barrier layer to obtain a pretreatment structure, wherein the substrate is exposed out of the opening;
performing thermal oxidation treatment on the pretreatment structure to form a silicon local oxidation layer with initial thickness on the surface of the substrate exposed by the opening, wherein the silicon local oxidation layer extends to the bottom of the etching barrier layer to form a bird's beak, and the initial thickness is greater than the target thickness of the silicon local oxidation layer;
removing the etching barrier layer;
and carrying out wet etching on the silicon local oxide layer to adjust the thickness of the silicon local oxide layer to the target thickness, wherein the bird's beak width is reduced in the process.
2. The method for reducing the bird's beak width of a local oxide layer of silicon as in claim 1, wherein the thermal oxidation is dry oxygen oxidation.
3. The method for reducing the bird's beak width of a local oxide layer of silicon as claimed in claim 1, wherein the thickness of the etch stop layer is 400-600 angstroms.
4. The method for reducing the beak width of a local oxide layer of silicon according to claim 1, wherein the difference between the initial thickness and the target thickness is 10% to 50%.
5. The method for reducing the beak width of a local oxide layer of silicon as in claim 4, wherein the initial thickness is 1500-3000 angstroms.
6. The method of claim 5, wherein the initial thickness is 2000 angstroms and the target thickness is 1600 angstroms.
7. The method according to claim 1, wherein the method further comprises a step of forming a liner oxide layer on the surface of the substrate before forming the etch stop layer, wherein the etch stop layer is formed on the surface of the liner oxide layer.
8. The method as claimed in claim 7, wherein after the forming the etching barrier layer, the etching barrier layer is etched by a dry etching process to form an upper opening in the etching barrier layer, and then the liner oxide layer in the upper opening is removed by a wet etching process to expose the substrate.
9. The method of claim 8, wherein the liner oxide layer has a thickness of 100-200 angstroms, and the step of forming the liner oxide layer comprises wet oxygen oxidation.
10. The method for reducing the bird's beak width of a local oxide layer of silicon according to any one of claims 1 to 9,
removing the etching barrier layer by using a hot phosphoric acid solution, wherein the volume percentage concentration of the hot phosphoric acid solution is 85-88%, and the temperature is 155-165 ℃;
and performing wet etching on the silicon local oxide layer by adopting a hydrofluoric acid solution to adjust the silicon local oxide layer to the target thickness, and adjusting the bird beak width in the process, wherein the volume ratio of hydrofluoric acid to water in the hydrofluoric acid solution is 150: 1-100: 1.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020105098A1 (en) * | 2001-02-06 | 2002-08-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method of the same |
| CN101350327A (en) * | 2007-07-17 | 2009-01-21 | 上海华虹Nec电子有限公司 | Method for preparing local silicon oxidation isolation structure |
| CN101359615A (en) * | 2007-07-30 | 2009-02-04 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor isolation structure and manufacturing method of semiconductor device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020105098A1 (en) * | 2001-02-06 | 2002-08-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method of the same |
| CN101350327A (en) * | 2007-07-17 | 2009-01-21 | 上海华虹Nec电子有限公司 | Method for preparing local silicon oxidation isolation structure |
| CN101359615A (en) * | 2007-07-30 | 2009-02-04 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor isolation structure and manufacturing method of semiconductor device |
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