CN113130317A - Preparation method of indium tin oxide thin film pattern - Google Patents
Preparation method of indium tin oxide thin film pattern Download PDFInfo
- Publication number
- CN113130317A CN113130317A CN202110383560.XA CN202110383560A CN113130317A CN 113130317 A CN113130317 A CN 113130317A CN 202110383560 A CN202110383560 A CN 202110383560A CN 113130317 A CN113130317 A CN 113130317A
- Authority
- CN
- China
- Prior art keywords
- tin oxide
- indium tin
- oxide film
- film
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 title claims abstract description 259
- 239000010409 thin film Substances 0.000 title claims abstract description 82
- 238000002360 preparation method Methods 0.000 title abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 285
- 238000005530 etching Methods 0.000 claims abstract description 102
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000011282 treatment Methods 0.000 claims abstract description 49
- 238000000265 homogenisation Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 102
- 238000000137 annealing Methods 0.000 claims description 94
- 230000008569 process Effects 0.000 claims description 51
- 238000002425 crystallisation Methods 0.000 claims description 30
- 230000008025 crystallization Effects 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 14
- 238000000059 patterning Methods 0.000 claims description 13
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 230000004048 modification Effects 0.000 claims description 6
- 238000012986 modification Methods 0.000 claims description 6
- 235000013842 nitrous oxide Nutrition 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000001771 vacuum deposition Methods 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 31
- 238000010586 diagram Methods 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000012545 processing Methods 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 238000013532 laser treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000009768 microwave sintering Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Abstract
The invention discloses a preparation method of an indium tin oxide thin film pattern. The preparation method of the indium tin oxide thin film pattern comprises the following steps: providing a substrate; forming an indium tin oxide film on the surface of the substrate; carrying out homogenization treatment on the indium tin oxide film; and carrying out patterned etching on the indium tin oxide film. The invention achieves the effect of preparing the indium tin oxide thin film pattern with low resistance and high fineness.
Description
Technical Field
The embodiment of the invention relates to the technical field of manufacturing, in particular to a method for preparing an indium tin oxide film pattern.
Background
Indium Tin Oxide (ITO) thin films have excellent conductivity and visible light transmittance, and are widely used in optoelectronic devices, such as touch screens, sensors, displays, and solar cells.
At present, the patterned ITO film is obtained by mainly adopting methods such as wet etching, dry etching or laser etching, wherein the pattern etching is firstly carried out, then the ITO film is annealed, and the etching treatment is firstly carried out, so that the problems of over-etching, uneven etching and irregular edge are easy to occur, the ITO film has amorphous components, and the resistance of the ITO film is larger.
Disclosure of Invention
The invention provides a preparation method of an indium tin oxide film pattern, which is used for preparing the indium tin oxide film pattern with low resistance and high precision.
The embodiment of the invention provides a preparation method of an indium tin oxide film pattern, which comprises the following steps:
providing a substrate;
forming an indium tin oxide film on the surface of the substrate;
carrying out homogenization treatment on the indium tin oxide film;
and carrying out patterning etching on the indium tin oxide film.
Optionally, homogenizing the indium tin oxide thin film comprises:
and crystallizing the indium tin oxide film.
Optionally, before the crystallization process of the indium tin oxide thin film, the method further includes:
and carrying out planarization treatment on the indium tin oxide film.
Optionally, the crystallizing the indium tin oxide thin film includes:
and crystallizing the indium tin oxide film through an annealing process.
Optionally, the crystallizing the indium tin oxide thin film through an annealing process includes:
and crystallizing the indium tin oxide film at a preset annealing temperature through an annealing process, wherein the preset annealing temperature is greater than or equal to 150 ℃ and less than or equal to 350 ℃.
Optionally, the crystallizing the indium tin oxide thin film at the preset annealing temperature by an annealing process includes:
and placing the indium tin oxide thin film pattern in at least one heating device selected from an oven, a microwave heating device and a laser emitting device, and carrying out crystallization treatment on the indium tin oxide thin film through an annealing process at a preset annealing temperature.
Optionally, the energy density of the laser emitted by the laser emitting device is greater than or equal to 50 mj/cm and less than or equal to 120 mj/cm.
Optionally, the crystallizing the indium tin oxide thin film through an annealing process includes:
and crystallizing the indium tin oxide film by an annealing process in a vacuum environment or a mixed gas environment comprising at least one of oxygen, nitrogen, laughing gas, ozone, argon and air.
Optionally, the planarizing the indium tin oxide thin film includes:
and carrying out planarization treatment on the indium tin oxide film by adopting a plasma surface modification process.
Optionally, the forming an indium tin oxide thin film on the surface of the substrate includes:
and forming an indium tin oxide thin film on the surface of the substrate by at least one of a magnetron sputtering method, a chemical vapor deposition method, a spray thermal decomposition method, a solution method, a hydrothermal method, and a vacuum evaporation method.
The invention provides a substrate, forms an indium tin oxide film on the substrate, performs homogenization treatment on the indium tin oxide film, and then performs patterning etching on the indium tin oxide film. The indium tin oxide film is homogenized before the patterned etching, so that the appearance and the physical and chemical properties of internal tissues of the indium tin oxide film are more uniform, the film has uniform etching rate in each region in subsequent patterned etching, and the regular edge etching appearance is guaranteed. The etching is carried out on the uniform indium tin oxide film, so that the etching rate can be better controlled, the phenomenon of over-etching or under-etching is avoided, the situation of too much amorphous tissue is avoided, the pattern of the indium tin oxide film is more uniform, the conductivity of the indium tin oxide film is enhanced, the resistance value of the indium tin oxide film is reduced, and the high-precision indium tin oxide film pattern with low resistance value is obtained. And the cost can be reduced by adopting wet etching when the indium tin oxide film is subjected to patterning etching. The invention solves the problems of uneven and non-fine patterns and high cost of the indium tin oxide film, and achieves the effects of preparing the indium tin oxide film patterns with low resistance and high precision and reducing the preparation cost.
Drawings
FIG. 1 is a flow chart illustrating the preparation of an ITO film pattern according to an embodiment of the present invention;
FIG. 2 is a flow chart of the preparation of an ITO film pattern according to a second embodiment of the present invention;
FIG. 3 is a flow chart of the preparation of an ITO film pattern according to a third embodiment of the present invention;
FIG. 4 is a flow chart of the preparation of an ITO film pattern according to a fourth embodiment of the present invention;
FIG. 5 is a flow chart illustrating the preparation of an ITO film pattern according to a fifth embodiment of the present invention;
fig. 6 is a schematic diagram of an ito film pattern before photoresist stripping obtained by placing the ito film pattern in an oven for annealing and then etching;
fig. 7 is a schematic diagram illustrating a partially enlarged view of a photoresist-removed ito film pattern obtained by placing an ito film pattern in an oven for annealing and then etching according to a fifth embodiment of the present invention;
fig. 8 is a schematic diagram of an ito thin film pattern obtained by placing an ito thin film pattern in a microwave processing apparatus for annealing and then etching according to a fifth embodiment of the present invention;
fig. 9 is a schematic diagram of an ito thin film pattern obtained by placing an ito thin film pattern in a laser emitting device for annealing and then etching according to a fifth embodiment of the present invention;
FIG. 10 is a schematic diagram of a prior art ITO film pattern after etching and annealing before stripping;
fig. 11 is a partially enlarged view of a photoresist-removed ito film pattern obtained by annealing after etching in the prior art.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Example one
Fig. 1 is a flowchart of a method for preparing an ito thin film pattern according to an embodiment of the present invention, which is applicable to a case of preparing an ito thin film pattern, and referring to fig. 1, the method for preparing an ito thin film pattern includes:
and S110, providing a substrate.
Specifically, the substrate has a supporting and fixing function, and may be a hard substrate, such as a common alkali glass, alkali-free glass, quartz glass, a silicon substrate, or the like, or a flexible substrate, such as a Polyimide (PI) substrate, a polyethylene naphthalate (PEN) substrate, a polyethylene terephthalate (PET) substrate, a polyether sulfone resin (PES) substrate, a Polycarbonate (PC) substrate, or ultra-thin glass, and the specific substrate may be selected according to actual conditions, for example, according to the reliability of the substrate and a film layer to be manufactured, and is not limited herein.
And S120, forming an indium tin oxide film on the surface of the substrate.
Specifically, an Indium Tin Oxide (ITO) film is formed on the surface of the substrate, and may be formed directly on the surface of the substrate, or an isolation layer, a metal wire layer, a dielectric layer, or the like is formed on the substrate, and then the ITO film is formed, where the isolation layer may effectively isolate the migration of ions or radicals of the substrate, and may also effectively improve the adhesion between the film and the substrate, increase the transmittance of the substrate, or the like. The indium tin oxide film has excellent conductivity and visible light transmittance, high mechanical hardness and good chemical stability, and can improve the light extraction efficiency of the display screen. The indium tin oxide film may be a single-layer indium tin oxide film, or may be a composite film in which an indium tin oxide film layer, other transparent conductive oxides except the indium tin oxide film, and a metal film are stacked, and a specific indium tin oxide film structure may be determined according to actual circumstances, and is not limited herein.
S130, homogenizing the indium tin oxide film.
In particular, the homogenization treatment may include a homogenization treatment on the topography, such as thickness homogenization. The homogenization treatment may also include homogenization treatment of the internal structure properties, such as the physicochemical properties of the internal structure of the indium tin oxide film being uniform. For example, the indium tin oxide film with non-uniform thickness is easy to have under-etching condition at the part with too high thickness, which causes too high internal resistance of the indium tin oxide film. When the physical and chemical properties of the internal structure of the ito film are not uniform, for example, the amorphous structure is too large, which also results in too large internal resistance of the ito film. The indium tin oxide film is subjected to homogenization treatment, so that the appearance and the internal organization performance of the indium tin oxide film are more uniform, the film has uniform etching rate in each region in subsequent patterned etching, and the regular edge etching appearance is guaranteed. The etching is carried out on the uniform indium tin oxide film, so that the etching rate can be better controlled, the phenomenon of over-etching or under-etching is avoided, the pattern of the indium tin oxide film is more uniform, the conductivity of the indium tin oxide film is enhanced, and the resistance value of the indium tin oxide film is reduced.
S140, patterning and etching the indium tin oxide film.
Specifically, a photosensitive photoresist is coated on an indium tin oxide film, and then, the previous stage drying is carried out on a hot stage so as to dry most of the solvent, thereby achieving the effect of curing the photoresist. And then combining the mask plate, carrying out exposure treatment on the photoresist by using an exposure machine, and developing after exposure, wherein for the positive photoresist, the part irradiated by the ultraviolet rays is cleaned by the subsequent developing process, and for the negative photoresist, the opposite is true, and the part irradiated by the ultraviolet rays is reserved. After the development is completed, the patterned photoresist needs to be further cured to improve its adhesion and resistance to etching solutions. And etching the exposed indium tin oxide film by wet etching, wherein the etching process can be a soaking type or a spraying type. Spraying is generally adopted in industrial production to improve controllability of the etching process. And finally, removing the patterned photoresist by adopting a film stripping liquid or a plasma mode to obtain the substrate with the required indium tin oxide film pattern.
In dry etching, a pattern with a good edge is not obtained with a chlorine (Cl) -based gas, but methane (CH) is used4) And hydrogen (H)2) The mixed gas source is used for dry etching the indium tin oxide film, so that the indium tin oxide film is easy to explode, and the potential danger is increased; in addition, the volatility of the product of dry etching is poor, which is easy to cause cavity pollution, and the substrate can be polluted in the process, resulting in substrate defects. Furthermore, dry etching equipment is relatively expensive, and has a low yield, resulting in a high manufacturing cost. Therefore, the wet etching is safer and lower in cost compared with the dry etching, and is beneficial to obtaining patterns with better edges, so that the effect of obtaining high-precision indium tin oxide film patterns is achieved.
In the technical scheme of this embodiment, an indium tin oxide film is formed on a substrate by providing the substrate, and then the indium tin oxide film is subjected to a homogenization treatment and a patterning etching. The indium tin oxide film is homogenized before the patterned etching, so that the appearance and the physical and chemical properties of internal tissues of the indium tin oxide film are more uniform, the film has uniform etching rate in each region in subsequent patterned etching, and the regular edge etching appearance is guaranteed. The etching is carried out on the uniform indium tin oxide film, so that the etching rate can be better controlled, the phenomenon of over-etching or under-etching is avoided, the situation of too much amorphous tissue is avoided, the pattern of the indium tin oxide film is more uniform, the conductivity of the indium tin oxide film is enhanced, the resistance value of the indium tin oxide film is reduced, and the high-precision indium tin oxide film pattern with low resistance value is obtained. And the cost can be reduced by adopting wet etching when the indium tin oxide film is subjected to patterning etching. The technical scheme of the embodiment solves the problems of uneven and non-fine patterns and high cost of the indium tin oxide film, and achieves the effects of preparing the indium tin oxide film patterns with low resistance and high precision and reducing the preparation cost.
Based on the above technical solution, the step S120 of forming an indium tin oxide thin film on the surface of the substrate includes forming an indium tin oxide thin film on the surface of the substrate by at least one of a magnetron sputtering method, a chemical vapor deposition method, a spray pyrolysis method, a solution method, a hydrothermal method, and a vacuum evaporation method.
Specifically, the deposition speed is high by utilizing a magnetron sputtering method, and the obtained indium tin oxide film is well combined with the substrate; the density and the coating purity of the indium tin oxide film can be conveniently controlled by utilizing a chemical vapor deposition method; the spraying thermal decomposition method has the advantages of simple equipment, high film forming rate, low cost, easy doping realization and large-area film forming; large-area film formation can be realized by using a solution method and a hydrothermal method; the vacuum environment is cleaner by using a vacuum evaporation method, and the interference of impurities is avoided. Therefore, at least one of a magnetron sputtering method, a chemical vapor deposition method, a spray thermal decomposition method, a solution method, a hydrothermal method and a vacuum evaporation method can be selected when the indium tin oxide film is formed, compared with the existing lift-off method, the film forming method of the lift-off method can only select the sputtering method, and simultaneously, burrs are generated at the edges of the indium tin oxide film pattern due to the scattering effect generated by sputtering, so that the short circuit phenomenon is easy to occur; secondly, the stripping (lift-off) method requires a long time of ultrasonic stripping, which can easily cause the breakage of some thin metal wires or indium tin oxide thin film wires on the substrate; in addition, the lift-off method cannot obtain the indium tin oxide thin film pattern with small line width or small line spacing according to the special exposure requirement. Therefore, it is difficult to obtain a thin film pattern with regular edges and a narrow line width by the lift-off method, and the requirement for mass production cannot be satisfied. According to the technical scheme of the embodiment, at least one of a magnetron sputtering method, a chemical vapor deposition method, a spray thermal decomposition method, a solution method, a hydrothermal method and a vacuum evaporation method can be selected according to actual conditions to prepare the indium tin oxide film, so that the pattern with neat edges can be obtained on the indium tin oxide film more easily.
Example two
Fig. 2 is a flowchart of a second embodiment of the present invention, which is applicable to a case of preparing an ito thin film pattern, and optionally, referring to fig. 2, the method for preparing an ito thin film pattern includes:
s210, providing a substrate.
S220, forming an indium tin oxide film on the surface of the substrate.
S230, crystallizing the indium tin oxide film.
Specifically, the indium tin oxide film is crystallized, and compared with an amorphous indium tin oxide film, the crystallized indium tin oxide film has the advantages that the mechanical strength homogenization degree of each part of the film layer is improved, so that each region of the film has uniform etching rate in subsequent patterning etching, and the regular edge etching appearance is guaranteed. And compared with the amorphous indium tin oxide film, the indium tin oxide film after crystallization has increased carrier concentration and reduced internal resistance. The number of times of crystallization of the indium tin oxide film is not limited, and may be determined according to actual conditions, for example, the indium tin oxide film may be crystallized multiple times to ensure complete crystallization of the indium tin oxide film.
S240, carrying out patterning etching on the indium tin oxide film.
On the basis of the above embodiment, in the technical scheme of this embodiment, the indium tin oxide film is crystallized by performing crystallization on the indium tin oxide film, and the crystallized indium tin oxide film has improved mechanical strength uniformity of each part of the film layer compared with an amorphous indium tin oxide film, so that each region of the film has uniform etching rate in subsequent patterned etching, and the over-etching or under-etching phenomenon can be avoided, thereby providing guarantee for regular edge etching morphology. And compared with the amorphous indium tin oxide film, the indium tin oxide film after crystallization has increased carrier concentration and reduced internal resistance. Thereby facilitating the obtaining of a low-resistance, high-definition indium tin oxide thin film pattern.
EXAMPLE III
Fig. 3 is a flowchart of a method for preparing an ito thin film pattern according to a third embodiment of the present invention, where the third embodiment is applicable to a case of preparing an ito thin film pattern, and optionally, referring to fig. 3, the method for preparing an ito thin film pattern includes:
s310, providing a substrate.
S320, forming an indium tin oxide film on the surface of the substrate.
S330, carrying out planarization treatment on the indium tin oxide film.
Specifically, after the indium tin oxide film is formed on the substrate, the indium tin oxide film is subjected to planarization treatment, burrs of the indium tin oxide film are removed, and the roughness of the indium tin oxide film is reduced, so that the indium tin oxide film is crystallized more uniformly and fully during crystallization treatment, and the existence of an amorphous structure is avoided.
Optionally, the step S330 of performing a planarization process on the ito film includes:
s331, carrying out planarization treatment on the indium tin oxide film by adopting a plasma surface modification process.
Specifically, for example, a Plasma (Plasma) processing apparatus may be used to perform planarization on the indium tin oxide film by using a Plasma surface modification process to remove burrs of the indium tin oxide film. For example, indium tin oxide film thickness of 200nm, power of plasma processing device set at 100W, and continuous flushing gas during plasma processing, such as oxygen (O)2) Laughing gas (N)2O), ozone (O)3) At least one of Air (Air) and Air (pressure) is normal pressure, and the plasma treatment is performed for a certain time, for example, 60 seconds or other time, and the specific time can be determined according to actual conditions, and is not limited herein, so that the planarization is obtainedAn indium tin oxide film. The number of times of planarizing the indium tin oxide film is not limited, and may be determined according to actual circumstances, and for example, the indium tin oxide film may be planarized a plurality of times in order to improve the degree of planarization of the indium tin oxide film.
S340, crystallizing the indium tin oxide film.
And S350, carrying out patterning etching on the indium tin oxide film.
On the basis of the above embodiment, in the technical scheme of this embodiment, after the indium tin oxide film is formed on the substrate, the indium tin oxide film is subjected to planarization treatment, for example, the indium tin oxide film is subjected to planarization treatment by using a plasma surface modification process, so that burrs of the indium tin oxide film can be removed, and the roughness of the indium tin oxide film is reduced, so that the indium tin oxide film is crystallized more uniformly and sufficiently during crystallization treatment, and the existence of an amorphous structure is avoided. Thereby obtaining a high-definition indium tin oxide film.
Example four
Fig. 4 is a flowchart of a fourth embodiment of the present invention, which is applicable to a case of preparing an ito thin film pattern, and optionally, referring to fig. 4, the method for preparing an ito thin film pattern includes:
s410, providing a substrate.
And S420, forming an indium tin oxide film on the surface of the substrate.
S430, crystallizing the indium tin oxide film through an annealing process.
Specifically, the crystallization process of the indium tin oxide film is, for example, an annealing process of the indium tin oxide film, so that the indium tin oxide film is crystallized. The annealing process is, for example, a thermal annealing process, and after the indium tin oxide film is treated for a certain time, the indium tin oxide film is crystallized, so that the indium tin oxide film is more uniform, each region of the film has a uniform etching rate in subsequent patterned etching, and the regular edge etching morphology is guaranteed. And the mechanical strength homogenization degree of each part of the film layer is improved after the indium tin oxide film is crystallized, so that the etching rate is better controlled, the phenomenon of over etching or under etching is avoided, the patterns of the indium tin oxide film are more uniform, and the carrier concentration of the crystallized indium tin oxide film is increased compared with that of an amorphous indium tin oxide film, so that the resistance value of the indium tin oxide film can be reduced.
Optionally, S430, the crystallizing the indium tin oxide thin film through an annealing process includes:
and crystallizing the indium tin oxide film at a preset annealing temperature through an annealing process, wherein the preset annealing temperature is greater than or equal to 150 ℃ and less than or equal to 350 ℃.
Specifically, the indium tin oxide film is crystallized at a predetermined annealing temperature, which is greater than or equal to 150 degrees celsius and less than or equal to 350 degrees celsius, and the specific temperature may be determined according to practical situations, for example, according to the thickness of the indium tin oxide film, and is not limited herein. For example, the thickness of the indium tin oxide film is 150nm, the annealing temperature is set to 250 degrees celsius, and after a certain time of annealing treatment, the indium tin oxide film is sufficiently crystallized, the certain time may be 30 minutes, or other times, and the specific time may be determined according to actual situations, for example, the thickness of the indium tin oxide film and the annealing temperature, which is not limited herein. Compared with the amorphous indium tin oxide film, the crystallized indium tin oxide film has the advantages that the mechanical strength homogenization degree of each part of the film layer is improved, so that each region of the film has uniform etching rate in subsequent patterned etching, and the regular edge etching morphology is guaranteed. And compared with the amorphous indium tin oxide film, the indium tin oxide film after crystallization has increased carrier concentration and reduced internal resistance. Thereby facilitating the obtaining of a low-resistance, high-definition indium tin oxide thin film pattern.
Optionally, S430, the crystallizing the indium tin oxide thin film through an annealing process includes:
and crystallizing the indium tin oxide film by an annealing process in a vacuum environment or a mixed gas environment comprising at least one of oxygen, nitrogen, laughing gas, ozone, argon and air.
Specifically, the crystallization treatment of the indium tin oxide film through the annealing process can be performed in a vacuum environment, the vacuum environment can avoid the influence of impurities in the environment on the crystallization of the indium tin oxide film, so that the indium tin oxide film is crystallized more uniformly, the vacuum annealing process can set different pressure intensities, and the specific pressure intensity can be determined according to actual conditions. The indium tin oxide film is crystallized by the annealing process, or is subjected to atmosphere annealing, namely, the indium tin oxide film is subjected to atmosphere annealing in the presence of oxygen and nitrogen (N)2) And a mixed gas environment of at least one of laughing gas, ozone, argon (Ar) and air, and the specific gas type may be determined according to practical situations, and is not limited herein. The pressure conditions for annealing with different gases may be determined according to actual conditions, such as the thickness of the indium tin oxide film and the annealing temperature, and are not limited herein.
And S440, carrying out patterning etching on the indium tin oxide film.
On the basis of the above embodiment, in the technical scheme of this embodiment, the indium tin oxide film is crystallized by adopting an annealing process at a preset annealing temperature, the annealing process may be performed in a vacuum environment, or the annealing process may be performed in a mixed gas environment comprising at least one of oxygen, nitrogen, laughing gas, ozone, argon and air, so that the indium tin oxide film is crystallized, the indium tin oxide film is more uniform, each region of the film has a uniform etching rate in subsequent patterned etching, and a guarantee is provided for regular edge etching morphology. And the mechanical strength homogenization degree of each part of the film layer is improved after the indium tin oxide film is crystallized, so that the etching rate is better controlled, the phenomenon of over etching or under etching is avoided, the patterns of the indium tin oxide film are more uniform, and the carrier concentration of the crystallized indium tin oxide film is increased compared with that of an amorphous indium tin oxide film, so that the resistance value of the indium tin oxide film is reduced. Thereby facilitating the formation of a low-resistance, high-definition ITO film pattern.
EXAMPLE five
Fig. 5 is a flowchart of a fifth embodiment of the present invention, which is applicable to a case of preparing an ito thin film pattern, and optionally, referring to fig. 5, the method for preparing an ito thin film pattern includes:
s510, providing a substrate.
S520, forming an indium tin oxide film on the surface of the substrate.
S530, carrying out crystallization treatment on the indium tin oxide film through an annealing process at a preset annealing temperature, wherein the preset annealing temperature is greater than or equal to 150 ℃ and less than or equal to 350 ℃.
Optionally, the step S530 of performing crystallization processing on the indium tin oxide film at the preset annealing temperature by an annealing process includes:
and placing the indium tin oxide film pattern in at least one heating device selected from an oven, a microwave heating device and a laser emitting device, and carrying out crystallization treatment on the indium tin oxide film through an annealing process at a preset annealing temperature.
Specifically, the crystallization of the ito film by the annealing process may be performed by placing the ito film pattern in an oven for annealing, for example, by annealing the prepared ito film in the oven, wherein the ito film has a thickness of 150nm, the annealing temperature is set to 250 ℃, and nitrogen (N) is continuously injected during the annealing process2) The flow rate of nitrogen is 3sccm, the pressure is normal pressure, and the indium tin oxide thin film is crystallized after 30 minutes of annealing treatment. The annealing device may be an oven, a hot plate, or another heating device, and is not limited herein. Compared with the amorphous indium tin oxide film, the crystallized indium tin oxide film has the advantages that the mechanical strength homogenization degree of each part of the film layer is improved, so that each region of the film has uniform etching rate in subsequent patterned etching, and the regular edge etching morphology is guaranteed. And isCompared with the amorphous indium tin oxide film, the indium tin oxide film after crystallization has increased carrier concentration and reduced internal resistance. Therefore, the indium tin oxide thin film pattern is placed in an oven for annealing treatment, so that the indium tin oxide thin film pattern with low resistance and high fineness can be obtained.
Alternatively, for example, the ito film is a composite film, the first film is an ito film with a thickness of 50nm, the second film is a silver (Ag) film with a thickness of 8nm, and the third film is an ito film with a thickness of 50nm, and the conductivity of the ito film can be increased by adding the silver film. Annealing the indium tin oxide composite film, setting the temperature at 250 ℃, and continuously injecting nitrogen (N) in the annealing process2) The flow rate of nitrogen is 3sccm, the pressure is normal pressure, and the indium tin oxide thin film is crystallized after 30 minutes of annealing treatment. The specific annealing temperature, gas flow rate and annealing time can be determined according to practical conditions, such as the thickness of the indium tin oxide film, and are not limited herein. Compared with the amorphous indium tin oxide film, the crystallized indium tin oxide film has the advantages that the mechanical strength homogenization degree of each part of the film layer is improved, so that each region of the film has uniform etching rate in subsequent patterned etching, and the regular edge etching morphology is guaranteed. And compared with the amorphous indium tin oxide film, the indium tin oxide film after crystallization has increased carrier concentration and reduced internal resistance. Therefore, the indium tin oxide thin film pattern is placed in an oven for annealing treatment, so that the indium tin oxide thin film pattern with low resistance and high fineness can be obtained.
The crystallization treatment of the indium tin oxide film through the annealing process may be an annealing treatment by placing the indium tin oxide film pattern in a microwave heating device, the microwave heating device may adopt at least one of pure microwave heating and conventional electric heating, and the power of the microwave heating device may be adjustable, and the microwave treatment such as microwave sintering, microwave catalysis, microwave selective heating and the like may be performed on the indium tin oxide film. The heating capacity of the microwave heating device can reach more than 2000 ℃, the temperature rising speed can reach 1000 ℃/min, the microwave frequency can reach about 2450MHz, and the output power adjusting range is 0.1-4 KW. The microwave heating device can be filled with gas for heating, or can be vacuumized and heated by a mechanical pump, a thermocouple is arranged in a heating cavity, and in-situ dynamic analysis, detection and video observation are carried out through a controller screen. For example, the prepared indium tin oxide film is subjected to microwave treatment in a microwave heating device, wherein the thickness of the indium tin oxide film is 200nm, the wavelength frequency of the microwave is 2450MHz, no gas is filled in the treatment process, the pressure is normal pressure, and the indium tin oxide film is crystallized after 10 minutes of microwave treatment. The specific microwave frequency and treatment time can be determined according to practical conditions, such as the thickness of the indium tin oxide film, and are not limited herein. Compared with the amorphous indium tin oxide film, the crystallized indium tin oxide film has the advantages that the mechanical strength homogenization degree of each part of the film layer is improved, so that each region of the film has uniform etching rate in subsequent patterned etching, and the regular edge etching morphology is guaranteed. And compared with the amorphous indium tin oxide film, the indium tin oxide film after crystallization has increased carrier concentration and reduced internal resistance. Therefore, the indium tin oxide thin film pattern is placed in a microwave heating device for annealing treatment, so that the indium tin oxide thin film pattern with low resistance and high fineness can be obtained.
The indium tin oxide film is crystallized through the annealing process, or the indium tin oxide film pattern is placed in a laser emitting device for annealing, and the laser device comprises a laser light source, an attenuator, a light beam alignment unit, a light beam homogenizer, a forming unit, a projection lens and the like. The laser light source can adopt diode-pumped solid-state laser with the wavelength of 355nm, 532nm or 1064nm, and also can adopt excited state atom laser with the wavelength of 157nm, 193nm, 248nm or 308 nm. The excimer laser has a beam absorption rate of more than 90% in the ITO thin film layer, so that only the upper ITO thin film layer can be selectively annealed, and the lower layers (such as an index matching layer, a color filter, a protective layer and the like) of the ITO thin film layer are hardly damaged. Laser light having a wavelength of 308nm among excimer laser light has high transmittance, and thus energy of the laser light reaches a color filter, a protective layer, a refractive index matching layer, and the like of a lower layer, and damages the lower layer. Therefore, in the case where the substrate is glass or the like, laser light having a wavelength of 248nm or 193nm can be used to prevent the laser light from being absorbed by the lower layer. If the wavelength is 308nm or more, a transmittance of 70% or more occurs, and the underlying color filter, protective layer, and the like are destroyed, but if the wavelength is 248nm, the transmittance is less than 5%, and therefore the underlying layer can be prevented from being destroyed, and therefore, excimer laser having a wavelength of 248nm can be used for laser annealing. The attenuator can adjust the energy of the laser beam output by the laser light source to a required value, and the attenuator can adjust the energy of the laser beam to be between 10% and 90% of the output energy of the laser. The beam homogenizer and the shaping unit can improve the uniformity of the laser beam so as to have a line beam shape, the beam homogenizer can convert the energy distribution from a gaussian shape to a flat top shape, and the shaping unit of the beam homogenizer and the shaping unit can convert the laser beam in a spot shape into a line beam shape, the line beam being a laser beam having a length greater than a width. The line beam may have a length of 60mm and a width of 1mm, for example, and the line beam may scan and move on the upper portion of the substrate to perform the laser annealing process on the indium tin oxide thin film layer, so that the large-area indium tin oxide thin film layer can be rapidly annealed by using the line beam, the overlapped section where the laser beams overlap is minimized or removed, the lower layer of the indium tin oxide thin film layer is prevented from being damaged, and the laser beam is converted into the line beam form, thereby forming a pattern with high productivity. In the laser annealing treatment, the laser device may be selected according to the specific circumstances, and is not limited here.
For example, the prepared indium tin oxide film is subjected to laser treatment in a laser treatment device, wherein the thickness of the indium tin oxide film is 200nm, no gas is filled in the treatment process, and the pressure is normal pressure. After laser treatment, the indium tin oxide film is crystallized. Compared with the amorphous indium tin oxide film, the crystallized indium tin oxide film has the advantages that the mechanical strength homogenization degree of each part of the film layer is improved, so that each region of the film has uniform etching rate in subsequent patterned etching, and the regular edge etching morphology is guaranteed. And compared with the amorphous indium tin oxide film, the indium tin oxide film after crystallization has increased carrier concentration and reduced internal resistance. Therefore, the indium tin oxide thin film pattern is placed in a laser emitting device for annealing treatment, so that the indium tin oxide thin film pattern with low resistance and high fineness can be obtained.
Alternatively, the energy density of the laser light emitted by the laser emitting device is greater than or equal to 50 mj/cm and less than or equal to 120 mj/cm.
Specifically, when the laser energy density is greater than 120 mj/cm, the crystallization degree is too strong and the crystallization is severe in the crystallization process of the amorphous indium tin oxide thin film layer, the roughness of the thin film is obviously increased, and even microcracks can occur. When the laser energy density is less than 50 mj/cm, the degree of crystallization is low, and hence the degree of crystallization is weak, and the effect of the modification treatment on the thin film is not significant. Therefore, the energy density of the laser emitted by the laser emitting device is more than or equal to 50 mJ/cm and less than or equal to 120 mJ/cm, so that the indium tin oxide film can be fully crystallized, the existence of an amorphous structure can be avoided, and the problems of serious crystallization and serious roughness increase can be avoided.
And S540, carrying out patterning etching on the indium tin oxide film.
Specifically, the indium tin oxide film is subjected to patterning etching to obtain a required pattern. Fig. 10 is a schematic diagram of a pattern of an ito film before photoresist stripping obtained by performing an annealing treatment after etching in the prior art, and referring to fig. 10, the ito film pattern obtained by performing an annealing treatment after etching in the prior art is over-etched severely, which results in severe recess at a pattern chamfer. Fig. 11 is a schematic diagram of a partially enlarged view of a photoresist-removed ito film pattern obtained by annealing after etching in the prior art, and referring to fig. 11, fig. 11 is an enlarged view of a portion corresponding to 20 of fig. 10, in the prior art, the ito film pattern obtained by annealing after etching has irregular edge profile and much burrs. Fig. 6 is a schematic diagram of an ito film pattern before photoresist stripping obtained by placing an ito film pattern in an oven for annealing and then etching, according to a fifth embodiment of the present invention, and referring to fig. 6, the ito film pattern obtained by placing an ito film pattern in an oven for annealing and then etching hardly has an over-etching phenomenon, and there is no abnormal recess at a chamfer of the pattern. Fig. 7 is a schematic diagram of a partial enlarged view of a photoresist-removed indium tin oxide thin film pattern obtained by placing an indium tin oxide thin film pattern in an oven for annealing treatment and then etching, according to a fifth embodiment of the present invention, and referring to fig. 7, fig. 7 is an enlarged view corresponding to the portion 30 of fig. 6, an edge profile of an indium tin oxide thin film pattern obtained by placing an indium tin oxide thin film pattern in an oven for annealing treatment and then etching is very regular, and there are few burrs. Fig. 8 is a schematic diagram of an indium tin oxide thin film pattern obtained by placing an indium tin oxide thin film pattern in a microwave processing device for annealing and then etching, according to the fifth embodiment of the present invention, and referring to fig. 8, the indium tin oxide thin film pattern is placed in the microwave processing device for annealing and then etched, so that the indium tin oxide thin film obtained by etching has regular edges, no burrs, almost uniform pattern pitches, and uniform patterns. Fig. 9 is a schematic diagram of an ito thin film pattern obtained by placing an ito thin film pattern in a laser emitting device for annealing and then etching, according to a fifth embodiment of the present invention, and referring to fig. 9, the ito thin film pattern is placed in the laser emitting device for annealing and then etched, so that the ito thin film obtained by etching has a line width of only 2 micrometers, a line pitch of only 2 micrometers, a uniform pattern, regular pattern edges, and no burrs.
On the basis of the above embodiment, according to the technical scheme of this embodiment, the indium tin oxide thin film pattern is placed in at least one heating device including an oven, a microwave heating device, and a laser emitting device, and the indium tin oxide thin film is crystallized through an annealing process at a preset annealing temperature, so that the indium tin oxide thin film is crystallized, and compared with an amorphous indium tin oxide thin film, the crystallized indium tin oxide thin film has an improved mechanical strength homogenization degree of each part of the film layer, so that each region of the film has a uniform etching rate in subsequent patterned etching, and a guarantee is provided for regular edge etching morphology. And compared with the amorphous indium tin oxide film, the indium tin oxide film after crystallization has increased carrier concentration and reduced internal resistance. Thus, the indium tin oxide film pattern is annealed to obtain the indium tin oxide film pattern with low resistance and high fineness.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A method for preparing an indium tin oxide thin film pattern, comprising:
providing a substrate;
forming an indium tin oxide film on the surface of the substrate;
carrying out homogenization treatment on the indium tin oxide film;
and carrying out patterning etching on the indium tin oxide film.
2. The method of claim 1, wherein the homogenizing the ITO film comprises:
and crystallizing the indium tin oxide film.
3. The method of claim 2, further comprising the step of, before the step of crystallizing the ITO film:
and carrying out planarization treatment on the indium tin oxide film.
4. The method of claim 2, wherein the step of crystallizing the ITO film comprises:
and crystallizing the indium tin oxide film through an annealing process.
5. The method of claim 4, wherein the crystallizing the ITO film through an annealing process comprises:
and crystallizing the indium tin oxide film at a preset annealing temperature through an annealing process, wherein the preset annealing temperature is greater than or equal to 150 ℃ and less than or equal to 350 ℃.
6. The method of claim 5, wherein the step of crystallizing the ITO film at a predetermined annealing temperature by an annealing process comprises:
and placing the indium tin oxide thin film pattern in at least one heating device selected from an oven, a microwave heating device and a laser emitting device, and carrying out crystallization treatment on the indium tin oxide thin film through an annealing process at a preset annealing temperature.
7. The method of claim 6, wherein the laser emission device emits laser light having an energy density of 50 mJ/cm or more and 120 mJ/cm or less.
8. The method of claim 5, wherein the crystallizing the ITO film through an annealing process comprises:
and crystallizing the indium tin oxide film by an annealing process in a vacuum environment or a mixed gas environment comprising at least one of oxygen, nitrogen, laughing gas, ozone, argon and air.
9. The method of claim 3, wherein the step of planarizing the ITO film comprises:
and carrying out planarization treatment on the indium tin oxide film by adopting a plasma surface modification process.
10. The method of claim 1, wherein the forming of the ITO film on the surface of the substrate comprises:
and forming an indium tin oxide thin film on the surface of the substrate by at least one of a magnetron sputtering method, a chemical vapor deposition method, a spray thermal decomposition method, a solution method, a hydrothermal method, and a vacuum evaporation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110383560.XA CN113130317A (en) | 2021-04-09 | 2021-04-09 | Preparation method of indium tin oxide thin film pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110383560.XA CN113130317A (en) | 2021-04-09 | 2021-04-09 | Preparation method of indium tin oxide thin film pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113130317A true CN113130317A (en) | 2021-07-16 |
Family
ID=76775773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110383560.XA Pending CN113130317A (en) | 2021-04-09 | 2021-04-09 | Preparation method of indium tin oxide thin film pattern |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113130317A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4670097A (en) * | 1985-12-23 | 1987-06-02 | Gte Products Corporation | Method for patterning transparent layers on a transparent substrate |
| CN1501456A (en) * | 2002-11-15 | 2004-06-02 | 友达光电股份有限公司 | Method for reducing rough point of conductive film surface |
| US20070295963A1 (en) * | 2006-06-22 | 2007-12-27 | Mitsubishi Electric Corporation | Tft array substrate and method of manufacturing the same |
| CN105103093A (en) * | 2013-06-05 | 2015-11-25 | Wi-A株式会社 | Ito patterning device and patterning method |
| CN106571174A (en) * | 2016-11-09 | 2017-04-19 | 宜昌南玻显示器件有限公司 | Transparent conductive film preparation method and transparent conductive film |
-
2021
- 2021-04-09 CN CN202110383560.XA patent/CN113130317A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4670097A (en) * | 1985-12-23 | 1987-06-02 | Gte Products Corporation | Method for patterning transparent layers on a transparent substrate |
| CN1501456A (en) * | 2002-11-15 | 2004-06-02 | 友达光电股份有限公司 | Method for reducing rough point of conductive film surface |
| US20070295963A1 (en) * | 2006-06-22 | 2007-12-27 | Mitsubishi Electric Corporation | Tft array substrate and method of manufacturing the same |
| CN105103093A (en) * | 2013-06-05 | 2015-11-25 | Wi-A株式会社 | Ito patterning device and patterning method |
| CN106571174A (en) * | 2016-11-09 | 2017-04-19 | 宜昌南玻显示器件有限公司 | Transparent conductive film preparation method and transparent conductive film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI424479B (en) | Method for patterning crystalline indium tin oxide by using femtosecond laser | |
| US20070241364A1 (en) | Substrate with transparent conductive film and patterning method therefor | |
| Tseng et al. | Electrode patterning on PEDOT: PSS thin films by pulsed ultraviolet laser for touch panel screens | |
| JP2581373B2 (en) | Method for manufacturing transparent conductive film wiring board | |
| KR20110081772A (en) | Method for the selective doping of silicon and silicon substrate treated therewith | |
| CN104037060B (en) | The preparation method of polycrystalline metal oxide figure | |
| US6858512B2 (en) | Semiconductor device and method of producing the same | |
| TW201017762A (en) | Method for patterning crystalline indium tim oxide | |
| KR20060020575A (en) | Method of fabricating poly-crystal ito film and polycrystal ito electrode | |
| CN113130317A (en) | Preparation method of indium tin oxide thin film pattern | |
| CN104282546A (en) | Method for improving homogeneity of polycrystalline silicon layer | |
| JP2011154951A (en) | Equipment and method for treating plasma | |
| JP4872585B2 (en) | Substrate with transparent conductive film for laser patterning and manufacturing method thereof | |
| JP5099616B2 (en) | Method for manufacturing transparent substrate with circuit pattern | |
| JPH0918006A (en) | Thin film transistor and manufacture thereof | |
| JP2003171783A (en) | Selective etching treatment method for metallic oxide film, metallic oxide film subjected to selective etching treatment by the same method, optical element, and electrically conductive film | |
| WO2011027533A1 (en) | Method and apparatus for manufacturing a thin-film solar battery | |
| JP6539181B2 (en) | Method for blackening silver wiring and display device | |
| KR101762579B1 (en) | Laser crystallization methdo and device for ito | |
| CN1182565C (en) | Semiconductor film, its forming mehtod and method for manufacturing semiconductor | |
| JP2005209691A (en) | Method for patterning transparent electrode and manufacturing method for liquid-crystal display | |
| JP4036278B2 (en) | Ion doping equipment | |
| KR102137145B1 (en) | Etching device, etching method using the same, and manufacturing method for display device | |
| JP2587972B2 (en) | Thin film structure | |
| KR20130092022A (en) | Shoulder removing device and method using laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210716 |