CN113129980B

CN113129980B - Information decoding method and device, electronic equipment and storage medium

Info

Publication number: CN113129980B
Application number: CN202110510760.7A
Authority: CN
Inventors: 王泽霞; 姜一扬; 杜智超; 王颀; 王瑜; 田野; 王礼维
Original assignee: Yangtze Memory Technologies Co Ltd
Current assignee: Yangtze Memory Technologies Co Ltd
Priority date: 2020-08-04
Filing date: 2020-08-04
Publication date: 2022-06-03
Anticipated expiration: 2040-08-04
Also published as: CN113129980A; CN111863088A; CN111863088B

Abstract

The application provides an information decoding method, an information decoding device, electronic equipment and a storage medium, wherein target basic information of a page is obtained, the target minimum reading times and target LLR information of the page are determined according to the target basic information, the reading times required by the page are determined according to the target minimum reading times, a voltage area to which a threshold voltage of a cell (storage unit) read each time belongs is determined, an LLR value of the cell is obtained by using the target LLR (confidence coefficient) information, then an LLR mean value of each cell in the page is obtained, and decoding is performed on the LLR mean values of all the cells in the page to obtain a decoding result of the page. The method and the device can reduce the threshold voltage fluctuation of the cell caused by random telegraph noise, so that the LLR value given to the cell is not accurate, the LDPC soft decoding efficiency is low, and the error correction capability of the LDPC soft decoding is limited.

Description

Information decoding method and device, electronic equipment and storage medium

The application provides divisional application to Chinese patent application with the application number of 202010772077.6, the application date of 2020, 08 and 04, and the invention name of 'an information decoding method, device, electronic equipment and storage medium'.

Technical Field

The present invention relates to the field of information decoding, and more particularly, to an information decoding method and apparatus, an electronic device, and a storage medium.

Background

With the progress of the process, 3D NAND Flash has been developed from SLC [ which can store 1bit (1 bit) information per cell ], MLC [ which can store 2bit (2 bit) information per cell ], to TLC [ which can store 3bit (3 bit) information per cell ], even QLC [ which can store 4bit (4 bit) information per cell ], and the number of stacked layers has also been developed from 32 layers to 64 layers, 128 layers, 256 layers, and the like.

With the development of flash memories, reliability problems become more and more significant, and Low Density Parity Code (LDPC) is widely used to enhance data reliability. In general, information bits are encoded, code words (formed by the information bits and check bits) obtained through encoding are written into each cell of a flash memory, after a certain time of storage, an LDPC soft decoding determines a voltage region to which a threshold voltage of the cell belongs by using a plurality of read voltages, different voltage regions correspond to different LLRs (confidence degrees), so that LLR values corresponding to the cells are given, after LLR values of each bit in the code words are obtained, decoding is performed by using a Sum-Product (SP) algorithm, and then storage information can be obtained.

However, due to the existence of read noise (including random telegraph noise, thermal noise, etc.), when information reading operation is performed, cell reading voltage fluctuates, a voltage region to which a cell belongs is judged incorrectly, and a wrong LLR value is given to the cell, so that an initial bit error rate (RBER) is increased, the number of iterations required by LDPC soft decoding is increased, the efficiency of LDPC soft decoding is low, and the error correction capability of LDPC soft decoding is limited.

Disclosure of Invention

In view of the above, the present invention provides an information decoding method, apparatus, electronic device and storage medium, so as to improve LDPC soft decoding efficiency and LDPC soft decoding error correction capability in an information decoding process. The technical scheme is as follows:

an information decoding method, comprising:

determining a page in a memory to be subjected to information decoding, wherein the page is composed of at least one memory cell;

acquiring target basic information of the page, wherein the target basic information comprises historical editing and erasing times of the page and storage duration of information stored in the page currently;

determining target confidence LLR information and target minimum reading times of the page according to the target basic information, wherein the target LLR information indicates at least one voltage area of the page and an LLR value of each voltage area;

reading the page with the lowest target reading times, acquiring a voltage region to which a threshold voltage of each cell in the page belongs when the page is read each time, and calculating an LLR mean value of each cell in the page by using the target LLR information and the voltage region to which each threshold voltage of the cell belongs;

and decoding the LLR mean values of all the cells in the page to obtain a decoding result of the page.

Preferably, the determining, according to the target basic information, the target confidence LLR information and the target minimum number of reads of the page includes:

determining a target page group of the page in the memory, wherein the memory is composed of a plurality of page groups, and each page group comprises a plurality of pages;

obtaining at least one preset LLR information and at least one minimum reading time corresponding to the target page group, wherein the at least one LLR information comprises LLR information of each piece of basic information of the target page group in at least one preset basic information, and the at least one minimum reading time comprises the minimum reading time of each piece of basic information of the target page group;

determining target LLR information of the target page group in the target base information from the at least one LLR information;

and determining the target minimum reading times of the target page group in the target basic information from the at least one minimum reading times.

Preferably, the obtaining a voltage region to which a threshold voltage of each cell in the page belongs when the page is read each time, and calculating an LLR mean value of each cell in the page by using the target LLR information and the voltage region to which each threshold voltage of the cell belongs includes:

acquiring a voltage area to which a threshold voltage of each cell in the page belongs when the page is read each time;

determining LLR values of voltage regions to which the threshold voltages of the cells belong in the target LLR information;

and calculating the LLR mean value of the cell according to the LLR values of the voltage regions to which all the threshold voltages of the cell belong.

Preferably, the decoding the LLR mean values of all the cells in the page to obtain the decoding result of the page includes:

decoding the LLR mean values of all the cells in the page to obtain decoding information of the page;

acquiring a coding matrix matching check matrix adopted when the storage information is stored in the page;

calculating error code information according to the decoding information and the check matrix, wherein the error code information represents the error code rate of the decoding information;

judging whether the decoding information meets preset decoding conditions or not according to the error code information;

and if the decoding information meets the decoding condition according to the error code information, determining the decoding information as a decoding result of the page.

Preferably, if it is determined that the decoding information does not satisfy the decoding condition according to the error code information, the method further includes:

judging whether the current reading times of the page exceed the preset highest reading times or not;

and if the current reading times of the page does not exceed the highest reading times, reading the page once to obtain a voltage area to which the threshold voltage of each cell in the page belongs, and returning to execute the steps of obtaining the voltage area to which the threshold voltage of each cell in the page belongs when the page is read each time, and calculating the LLR mean value of each cell in the page by using the target LLR information and the voltage area to which each threshold voltage of the cell belongs.

Preferably, the generating at least one LLR information corresponding to the target page group includes:

selecting unselected basic information from at least one preset basic information;

determining threshold voltage distribution information of the currently selected basic information of the target page group, wherein the threshold voltage distribution information indicates the number of cells of at least one storage state of the target page group under each threshold voltage;

acquiring at least one optimal reading reference voltage of the target page group according to the threshold voltage distribution information, wherein the at least one optimal reading reference voltage comprises a threshold voltage corresponding to an intersection point of two adjacent storage states in the at least one storage state;

determining at least one target optimal read reference voltage for the target page set using the at least one optimal read reference voltage based on a threshold voltage distribution for each of the at least one memory state;

and determining LLR information of the currently selected basic information of the target page group based on the at least one target optimal reading reference voltage.

Preferably, the determining at least one target optimal read reference voltage of the target page group by using the at least one optimal read reference voltage based on the threshold voltage distribution of each of the at least one memory state includes:

determining respective first optimal read reference voltages from the at least one optimal read reference voltage by using the threshold voltage distribution of each of the at least one memory state, wherein the data represented by two memory states adjacent to the first optimal read reference voltages are different;

determining two second optimal reading reference voltages respectively corresponding to each optimal reading reference voltage according to preset upper voltage floating information and lower voltage floating information, wherein one second optimal reading reference voltage is related to the upper voltage floating information, and the other second optimal reading reference voltage is related to the lower voltage floating information;

determining a third optimal read reference voltage respectively related to each first optimal read reference voltage from all the second optimal read reference voltages; the first optimal read reference voltage, the second optimal read reference voltage corresponding to the first optimal read reference voltage, and the third optimal read reference voltage constitute at least one target optimal read reference voltage of the target page group.

An information reading apparatus comprising:

the device comprises a page determining unit, a page decoding unit and a page decoding unit, wherein the page determining unit is used for determining a page in a memory to be subjected to information decoding, and the page is composed of at least one memory cell;

the information acquisition unit is used for acquiring target basic information of the page, wherein the target basic information comprises the historical editing and erasing times of the page and the storage duration of the information stored in the current page in the page;

an information determining unit, configured to determine, according to the target base information, target confidence LLR information and a target minimum number of reads of the page, where the target LLR information indicates at least one voltage region of the page and an LLR value of each voltage region;

the calculation unit is used for reading the page with the lowest target reading times, acquiring a voltage region to which the threshold voltage of each cell in the page belongs when the page is read each time, and calculating an LLR mean value of each cell in the page by using the target LLR information and the voltage region to which each threshold voltage of the cell belongs;

and the information decoding unit is used for decoding the LLR mean values of all the cells in the page to obtain a decoding result of the page.

An apparatus, comprising: the system comprises a processor and a memory, wherein the processor and the memory are connected through a communication bus; the processor is used for calling and executing the program stored in the memory; the memory is used for storing programs, and the programs are used for realizing the information decoding method.

A computer-readable storage medium having stored therein computer-executable instructions for performing the information decoding method.

The application provides an information decoding method, an information decoding device, electronic equipment and a storage medium, wherein target basic information of a page is obtained, the target minimum reading times and target LLR information of the page are determined according to the target basic information, the times required for reading the page are determined according to the target minimum reading times, a voltage area to which a threshold voltage of a cell read each time belongs is determined, LLR values of the cells obtained by the target LLR information are used, then the LLR mean value of each cell in the page is obtained, then the LLR mean values of all the cells in the page are decoded to obtain decoding results of the page, and therefore the information in the page is read. The method for decoding the LLR mean values of all cells in the page to read the information in the page can reduce the threshold voltage fluctuation of the cells caused by random telegraph noise, so that the LLR values given to the cells are not accurate, the LDPC soft decoding efficiency is low, and the error correction capability of the LDPC soft decoding is limited.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.

FIG. 1 is a schematic diagram of an information decoding method provided in the prior art;

fig. 2 is a flowchart of a method for determining at least one LLR information corresponding to a page group according to an embodiment of the present disclosure;

FIG. 3 is a flowchart of a method for determining at least one optimal read reference voltage for a target page group using at least one optimal read reference voltage based on a threshold voltage distribution of each of at least one memory state according to an embodiment of the present disclosure;

FIG. 4 is a schematic diagram of a TLC distribution regime area partitioning provided by an embodiment of the present application;

fig. 5 is a flowchart of an information decoding method according to an embodiment of the present application;

FIG. 6 is a flowchart of another information decoding method according to an embodiment of the present application;

fig. 7 is a schematic diagram of an information decoding method according to an embodiment of the present application;

fig. 8 is a schematic structural diagram of an information reading apparatus according to an embodiment of the present application.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In this application, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

Example (b):

LDPC soft decoding: and the different voltage areas correspond to different LLRs (confidence degrees), the voltage area to which the threshold voltage of the cell (memory cell) in the memory belongs is judged, the LLR value corresponding to the cell is given, and decoding is carried out by using a sum-product algorithm, so that the storage information can be obtained.

Wherein p is₀To give the probability that bit is 0 in a given voltage region, p₁Is the probability that bit is 1 in a given voltage region.

Fig. 1 is a schematic diagram of an information decoding method provided in the prior art. Referring to fig. 1, in the prior art, when reading storage information in a cell, it is only necessary to read a threshold voltage of the cell once and determine a voltage region to which the threshold voltage belongs, and a corresponding LLR value may be directly assigned to the cell according to a one-to-one correspondence between the voltage region and the LLR value, so that the LLR value of the cell is decoded by using a sum-product algorithm, and the storage information of the cell may be obtained.

However, due to noise interference (the existence of read noise mainly including random telegraph noise), when a read operation is executed, the threshold voltage of the cell fluctuates, the judgment of the voltage region is wrong, and the LLR value of the cell is given to the cell, so that the initial bit error rate (RBER) is high, the number of iterations required by decoding is large, and the error correction capability of LDPC soft decoding is limited.

In view of this, embodiments of the present application provide an information decoding method, an apparatus, an electronic device, and a storage medium, where an upper and a lower read time limits are determined through a pre-experiment (the upper and the lower read time limits include an upper read time limit and a lower read time limit, the upper read time limit may be regarded as a highest read time, and the lower read time limit may be regarded as a lowest read time), a plurality of LLR values of a cell are obtained through multiple reads according to the upper and the lower read time limits, and decoding is performed using an LLR mean value, so as to improve LDPC soft decoding efficiency and LDPC soft decoding error correction capability.

The following describes in detail a manner of determining a lower limit of the number of readings (the lowest number of readings) and an upper limit of the number of readings (the highest number of readings) provided in an embodiment of the present application.

From a statistical point of view, the reliability of the guess can be increased by appropriately increasing the number of samples. Therefore, for a large number of memory cells (cells), when representing the confidence that a cell read is 0 (or 1), the LLR mean obtained by multiple reads is more reliable than the LLR value obtained by one read. If the LLR value obtained by one-time reading cannot be decoded correctly, the LLR mean value obtained by multiple times of reading can be used for decoding.

Through preliminary experiments, the minimum reading times required for enabling the Uncorrectable Bit Error Rate (UBER) to be within a certain threshold value (LUBER) under different editing (P/E) times and different storage times are determined, and a reading time lower limit table is generated, wherein the reading time lower limit table is shown in table 1, for example, table 1 shows the minimum reading times (reading time lower limit) required under different editing (P/E) times and different storage times, and N1< N2< N3 … … < N9.

The memory is composed of a plurality of blocks, each of which is composed of a plurality of pages, each of which is composed of a plurality of cells. Considering that there may be hardware differences among pages in different areas of different blocks in the same memory, in the embodiment of the present application, all the pages in the memory are divided into a plurality of page groups, and the following process is performed for each page group: and determining the minimum reading times of the page group required for enabling the Uncorrectable Bit Error Rate (UBER) to be within a certain threshold value (LUBER) under different programming times and different storage times through a pre-experiment to obtain a reading time lower limit table of the page group.

Now, the following description will be given by taking the table for determining the lower limit of the number of times of reading for one page group as an example:

the way of dividing all pages in the memory into multiple page groups may be: for each block in the memory, dividing all pages in the block into a plurality of continuous page groups, wherein one page only belongs to one page group.

In the preliminary experiment, writing a code word obtained after random number coding into a page group of a block passing through A times of P/E (program/erase), after B years are stored, reading the page group to obtain voltage regions to which threshold voltages of all cells in the page group belong, searching an LLR table (the LLR table is an LLR table of the page group under the condition that the basic information is that the number of times of encoding and erasing is A times and the storage duration is B years), giving LLR values of the corresponding voltage regions of the cells, carrying out sum-product algorithm decoding on the LLR values, if UBER is not lower than LUBER, reading the page group once again to obtain the voltage regions to which the threshold voltages of the cells in the page group belong, giving LLR values of the cells to the corresponding voltage regions to the cells, calculating the mean LLR values of the cells given twice, giving the cells to the LLR means, decoding again, if UBER is lower than LUBER, continuing to increase the number of times of reading the page group, until UBER is lower than LUBER, the total number of TIMEs of reading a page group is taken as the lower limit of the number of TIMEs of reading the page group at PE (index) and TIME (TIME) of the page group at B, wherein PE is the number of erasing TIMEs and TIME is the storage TIME length.

TABLE 1 lower limit of reading times required for reaching decoding requirement under each encoding and erasing times and storage duration

In table 1, the abscissa represents the storage duration, and the ordinate represents the erasing times. In the embodiment of the application, the combination of the editing times and the storage duration can be regarded as basic information, and at least one piece of basic information can be preset, wherein any two pieces of basic information in the at least one piece of basic information are different from each other. And aiming at each page group, determining the lowest reading times of each piece of basic information in at least one piece of basic information of the page group to obtain a reading time lower limit table of the page group.

Furthermore, the inventor in the embodiment of the present application may also set an upper limit of the number of readings in advance according to experience by using a requirement for information decoding duration, and regarding each page in the memory, the upper limit of the number of readings is used as the highest number of readings for the page.

To facilitate understanding of an information decoding method provided in the embodiment of the present application, a detailed description is now made of a manner of determining at least one LLR information corresponding to a page group provided in the embodiment of the present application, and please refer to fig. 2 specifically.

As shown in fig. 1, the method includes:

s201, selecting unselected basic information from at least one preset basic information;

s202, determining threshold voltage distribution information of the currently selected basic information of the page group, wherein the threshold voltage distribution information indicates the number of cells of at least one storage state of the page group under each threshold voltage;

in this embodiment of the present application, data written in a page group is a random number, threshold voltage distribution information of the currently selected basic information of the page group is a distribution state of the page group under the condition of the currently selected basic information, where the distribution state includes the number of cells of each storage state of the page group under each threshold voltage.

S203, acquiring at least one optimal reading reference voltage of the page group according to the threshold voltage distribution information, wherein the at least one optimal reading reference voltage comprises a threshold voltage corresponding to an intersection point of two adjacent storage states in at least one storage state;

after threshold voltage distribution information of currently selected basic information of the page group is determined, the threshold voltage distribution information is determined to indicate threshold voltages corresponding to intersections of two adjacent storage states in at least one storage state of the page group, and each determined threshold voltage is used as an optimal read reference voltage (OPT).

S204, determining at least one target optimal reading reference voltage of the target page group by using the at least one optimal reading reference voltage based on the threshold voltage distribution of each storage state in the at least one storage state;

FIG. 3 is a flowchart of a method for determining at least one optimal read reference voltage for a target page set using at least one optimal read reference voltage based on a threshold voltage distribution of each of at least one memory state according to an embodiment of the present disclosure.

As shown in fig. 3, the method includes:

s301, determining each first optimal read reference voltage from at least one optimal read reference voltage by using threshold voltage distribution of each storage state in at least one storage state, wherein data represented by two storage states adjacent to the first optimal read reference voltage are different;

in this embodiment of the present application, data represented by each storage state in at least one storage state may be determined according to a gray code.

S302, according to preset upper voltage floating information and lower voltage floating information, two second optimal reading reference voltages corresponding to each optimal reading reference voltage respectively are determined, wherein one second optimal reading reference voltage is related to the upper voltage floating information, and the other second optimal reading reference voltage is related to the lower voltage floating information;

in the embodiment of the present application, the upper floating information (+ δ) and the lower floating information (- δ) are preset, and the following process is performed for each optimal read reference voltage (OPT): and determining two second optimal reading reference voltages corresponding to the optimal reading reference voltage, wherein one second optimal reading reference voltage is related to the floating-on-voltage information, and the other second optimal reading reference voltage is related to the floating-off-voltage information. For example, the sum of the optimal read reference voltage and floating-up information (OPT + δ) is used as a second optimal read reference voltage corresponding to the optimal read reference voltage, and the sum of the optimal read reference voltage and floating-down information (OPT- δ) is used as another second optimal read reference voltage corresponding to the optimal read reference voltage.

S303, determining a third optimal reading reference voltage respectively related to each first optimal reading reference voltage from all the second optimal reading reference voltages; the first optimal reading reference voltage, the second optimal reading reference voltage corresponding to the first optimal reading reference voltage, and the third optimal reading reference voltage form at least one target optimal reading reference voltage of a page group.

In the embodiment of the present application, taking a first optimal read reference voltage as an example, the manner of determining a third optimal read reference voltage related to the first read reference voltage may be: and for each of the two determined second optimal read reference voltages, acquiring a second optimal read reference voltage adjacent to the second optimal read reference voltage as a third optimal read reference voltage related to the first optimal read reference voltage.

The first optimal reading reference voltage, the second optimal reading reference voltage corresponding to the first optimal reading reference voltage, and the third optimal reading reference voltage form at least one target optimal reading reference voltage of the page group. That is, each first optimal read reference voltage may be regarded as a target optimal read reference voltage, a second optimal read reference voltage corresponding to each first optimal read reference voltage may be regarded as a target optimal read reference voltage, and each third optimal read reference voltage may be regarded as a target optimal read reference voltage.

S205, determining LLR information of the currently selected basic information of the page group based on at least one target optimal read reference voltage;

in this embodiment of the application, the at least one target optimal read reference voltage may also be regarded as a region division voltage, the threshold voltage of the page group in the threshold voltage distribution information of the currently selected basic information is divided into at least one voltage region based on the region division voltage, and then an LLR value of each voltage region in the at least one voltage region is respectively determined according to a calculation manner of an LLR, so as to obtain LLR information of the currently selected basic information of the page group.

As a preferred implementation manner of the embodiment of the present application, the LLR information of the currently selected basic information in the page group includes: at least one voltage region of the page group and an LLR value of each voltage region in the case of the currently selected basis information. It should be noted that the at least one voltage region includes each voltage region into which the threshold voltage of the threshold voltage distribution information of the page group is divided by at least one target optimal read reference voltage in the case of the currently selected basic information, and the at least one target optimal read reference voltage is at least one target optimal read reference voltage of the page group in the case of the currently selected basic information.

As another preferred implementation of the embodiment of the present application, the LLR information of the currently selected basic information in the page group includes: at least one target optimal read reference voltage of the page set in case of the currently selected basic information, and an LLR value of each of at least one voltage region into which the threshold voltage of the threshold voltage distribution information of the page set is divided by the at least one target optimal read reference voltage.

The LLR is calculated as follows:

wherein p is₀The probability that bit is 0 in a given voltage region, i.e., the proportion of cells with bit value 0 to all cells in the given voltage region, p₁The probability that bit is 1 in a given voltage region, i.e. the proportion of cells with bit value 1 to all cells in the given voltage region, is shown.

S206, detecting whether the unselected basic information exists in the at least one basic information; and if at least one piece of basic information contains unselected basic information, returning to execute the step S101.

Taking TLC as an example, in TLC, one physical page includes three logical pages, which are an upper page, a middle page and a lower page; correspondingly, the at least one LLR information corresponding to the page group includes: the LLR information comprises at least one LLR information corresponding to an upper page of a page group, at least one LLR information corresponding to a middle page of the page group, and at least one LLR information corresponding to a lower page of the page group. The method for calculating at least one LLR information corresponding to the upper Page, the middle Page, and the lower Page of the Page group may be referred to the method for calculating at least one LLR information corresponding to the Page group provided in the foregoing embodiment, which is not described in detail herein.

The following description will take an example of determining at least one LLR information corresponding to an upper page of a page group. Specifically, fig. 4 is a schematic diagram of dividing a TLC distribution area according to the embodiment of the present application.

Referring to FIG. 4, voltages OPT and OPT + -delta at the overlapping of adjacent states are used as zone dividing voltages, and 8 states (E-P7) of TLC are divided into 22 zones (1-22) by 21 voltages (RV 1-RV 21). From gray codes, when the upper pages of the page group are divided into voltage regions, i.e., the pages E to P2 are 1, the pages P3 to P6 are 0, and the pages P7 are 1, the regions are divided into regions by RV7, RV8, RV9, RV19, RV20, and RV21, and the regions are further divided into regions by RV6, RV10, and RV18, considering that the 0-1 ratio in regions 7 is different from that in regions 1 to 6 and the 0-1 ratio in regions 10 and 19 is different from that in regions 11 to 18. In the upper page, 10 voltage regions are divided by 9 voltages (RV6, RV7, RV8, RV9, RV10, RV18, RV19, RV20, RV21), and LLR values are calculated from 0-1 ratio in each voltage region. The following describes in detail how the upper page of the page group is divided into voltage regions.

As shown in FIG. 4, at least one of the storage states of the page set includes: memory state E, memory state P1, memory state P2, memory state P3, memory state P4, memory state P5, memory state P6, and memory state P7. The at least one optimal read reference voltage of the page group comprises: RV2, RV5, RV8, RV11, RV14, RV17 and RV 20. Wherein, at least one optimal reading reference voltage is the adjacent state overlapping voltage OPT.

Two second optimal read reference voltages corresponding to RV2 are RV1 and RV3, two second optimal read reference voltages corresponding to RV5 are RV4 and RV6, two second optimal read reference voltages corresponding to RV8 are RV7 and RV9, two second optimal read reference voltages corresponding to RV11 are RV10 and RV12, two second optimal read reference voltages corresponding to RV14 are RV13 and RV15, two second optimal read reference voltages corresponding to RV17 are RV16 and RV18, and two second optimal read reference voltages corresponding to RV20 are RV19 and RV 21.

Gray code shows that E-P2, P3-P6 and P7 in the upper page of the page group are 1, 0 and 1 respectively. Therefore, when the voltage area division is performed on the upper page, the respective first optimal read reference voltages of the upper page are determined from the at least one optimal read reference voltage of the page group by using the data represented by each storage state in the at least one storage state of the page group. Referring to fig. 4, the respective first optimal read reference voltages of the upper page determined from the at least one optimal read reference voltage include: RV8 and RV 20.

Determining two second optimal read reference voltages corresponding to the first optimal read reference voltage RV8 as RV7 and RV9, respectively, determining RV6 as a third optimal read reference voltage if the second optimal read reference voltage adjacent to RV7 is RV6, and determining RV10 as a third optimal read reference voltage if the second optimal read reference voltage adjacent to RV9 is RV 10; two second optimal read reference voltages corresponding to the first optimal read reference voltage RV20 are determined as RV19 and RV21, respectively, and the second optimal read reference voltage adjacent to RV19 is RV18, so that RV18 is determined as a third optimal read reference voltage, and there is no second optimal read reference voltage adjacent to RV 21.

Based on this, the embodiments of the present application determine the third optimal read reference voltages of the upper page to be RV6, RV10, and RV18, respectively; and then, forming at least one target optimal read reference voltage of the upper page by each first optimal read reference voltage, each second optimal read reference voltage corresponding to the first optimal read reference voltage, and each third optimal read reference voltage of the upper page, that is, the at least one target optimal read reference voltage comprises: RV6, RV7, RV8, RV9, RV10, RV18, RV19, RV20, RV21, and further RV6, RV7, RV8, RV9, RV10, RV18, RV19, RV20, RV21 divide the upper page of the page group into at least one voltage region.

The above process can be summarized as step 1 and step 2 described below.

Step 1, voltages OPT and OPT +/-delta at the overlapped part of adjacent states are used as region dividing voltages, and TLC 8 states (E-P7) are divided into 22 regions (1-22) by 21 voltages (RV 1-RV 21).

And 2, according to Gray codes, the E-P2, the P3-P6 and the P7 in the upper page are respectively 1, 0 and 1. Therefore, when the upper page is divided into regions, the regions are selected from RV7, RV8, RV9, RV19, RV20, and RV21, and the regions are further divided using RV6, RV10, and RV18, considering that the ratio of 0-1 in region 7 is different from that in regions 1 to 6 and the ratio of 0-1 in regions 10 and 19 is different from that in regions 11 to 18. In the upper page, 10 voltage regions are divided by 9 voltages (RV6, RV7, RV8, RV9, RV10, RV18, RV19, RV20, RV21), and LLR values (for example, ± 15 if the values are ± Inf) are calculated from 0-1 ratios in the respective voltage regions.

Further, on the basis of the step 1-2, the method can further comprise the following steps:

and 3, repeating the step 2 at different storage time to obtain at least one voltage area and each voltage area LLR value of the upper page at each storage time. These information are made into an upper page LLR table (in the example, the block to which the page used belongs passes PE 3K times).

And 4, writing the code word obtained after the information bit coding into a block of PE 3K times, searching an LLR table of an upper page after storing for a certain time, reading the area of the cell according to the area division voltages RV 6-RV 10 and RV 18-RV 21 under the corresponding storage time, and repeatedly reading for ten times.

And 5, obtaining 10 LLR values corresponding to the cell according to the region to which the cell belongs in each reading operation, and calculating LLR mean values of the cell in different reading times.

And 6, carrying out LDPC soft decoding by using LLR mean values under different reading times.

Based on the above commonalities, an information decoding method provided by the embodiments of the present application will now be described in detail.

Fig. 5 is a flowchart of an information decoding method according to an embodiment of the present application.

As shown in fig. 5, the method includes:

s501, determining a page in a memory to be subjected to information decoding, wherein the page is composed of at least one cell;

s502, acquiring target basic information of the page, wherein the target basic information comprises historical editing and erasing times of the page and storage duration of information stored in the current page in the page;

s503, determining target LLR information and target minimum reading times of the page according to the target basic information, wherein the target LLR information indicates at least one voltage area of the page and an LLR value of each voltage area;

in this embodiment of the present application, LLR information of a page in target basis information may be referred to as target LLR information, and the lowest read frequency of the page in the target basis information may be referred to as target lowest read frequency, where a manner of determining the target LLR information and the target lowest read frequency of the page according to the target basis information is as follows:

the method comprises the steps of calling a page group to which a page belongs in a memory as a target page group, and determining the target page group to which the page belongs in the memory; the method comprises the steps of obtaining at least one preset LLR information corresponding to a target page group and obtaining a preset lowest reading time lower limit table of the target page group.

The minimum reading time lower limit table of the target page group includes at least one minimum reading time corresponding to the target page group, and the at least one minimum reading time includes the minimum reading time of each piece of basic information of the target page group in at least one piece of preset basic information. And inquiring the minimum reading times of the target page group in the target basic information from at least one minimum reading time corresponding to the target page group, wherein the inquired minimum reading times are called as the target minimum reading times for convenience of distinguishing.

The at least one LLR information corresponding to the target page group comprises LLR information of each piece of basic information of the target page group in at least one piece of preset basic information. LLR information of the target page group in the target basic information is inquired from at least one LLR information corresponding to the target page group, and the inquired LLR information is called target LLR information for the convenience of distinguishing.

S504, reading the page with the lowest target reading times, acquiring a voltage region to which the threshold voltage of each cell in the page belongs when the page is read each time, and calculating an LLR mean value of each cell in the page by using the target LLR information and the voltage regions to which the threshold voltages of the cells belong;

in the embodiment of the application, a page with the lowest target reading times is read, and a voltage area to which a threshold voltage of each cell in the page belongs when the page is read each time is obtained; determining LLR values of voltage areas to which threshold voltages of cells in the target LLR information belong; and calculating the LLR mean value of the cell according to the read LLR values of the voltage regions to which all the threshold voltages of the cell belong.

Specifically, the page with the lowest target reading times is read, and each time the page is read, a voltage region of each cell in the page can be obtained, so that for each cell in the page, the page with the lowest target reading times can obtain the voltage regions with the lowest target reading times of the cell, and the LLR values of the cell in the voltage regions are determined by using the target LLR information for each voltage region of the cell, so that the LLR values of the cell can be determined for the voltage regions with the lowest target reading times of the cell, and the LLR average value of the LLR values of the cell is calculated. Based on this, an LLR mean of each cell in the page may be obtained for the cell.

The method for calculating the LLR mean of the target lowest-order LLR values of the cell may be as follows: the sum of the LLR values of the cell at the lowest target degree is calculated, and for convenience of distinguishing, the sum of the LLR values of the cell at the lowest target degree can be called as LLR value sum, and then the result obtained by dividing the LLR value sum by the minimum target reading times is used as the LLR mean value of the cell.

And S505, decoding the LLR mean values of all the cells in the page to obtain a decoding result of the page.

In the embodiment of the application, after the LLR mean value of each cell in all the cells in the page is obtained, LDPC soft decoding may be performed on the obtained LLR mean values of all the cells to obtain a decoding result of the page.

Fig. 6 is a flowchart of another information decoding method according to an embodiment of the present application.

As shown in fig. 6, the method includes:

s601, determining a page in a memory to be subjected to information decoding, wherein the page consists of at least one cell;

s602, acquiring target basic information of the page, wherein the target basic information comprises the historical editing and erasing times of the page and the storage duration of the information stored in the current page in the page;

s603, determining target LLR information and target minimum reading times of the page according to the target basic information, wherein the target LLR information indicates at least one voltage area of the page and an LLR value of each voltage area;

s604, reading the page with the lowest reading times of the target;

s605, obtaining a voltage area to which the threshold voltage of each cell in the page belongs when the page is read each time, and calculating an LLR mean value of each cell in the page by using the target LLR information and the voltage areas to which the threshold voltages of the cells belong;

in this embodiment, each time the page is read, one voltage region of each cell in the page may be acquired, so that when step S505 is executed, for each cell in the page, the information reading method provided in this embodiment may obtain, for each cell in the page, a target number of voltage regions of the cell, where the target number is a total number of times of reading the page, and for each voltage region of the cell, determine one LLR value of the cell by using the target LLR information, so that, for the target number of voltage regions of the cell, a target number of LLR values of the cell may be determined, and an LLR mean value of the target number of LLR values of the cell may be calculated. Based on this, an LLR mean of each cell in the page may be obtained for the cell.

S606, decoding LLR mean values of all cells in the page to obtain decoding information of the page;

s607, acquiring and storing the coding matrix matching check matrix adopted when the information is stored in the page;

s608, calculating error code information according to the decoding information and the check matrix, wherein the error code information represents the error code rate of the decoding information;

s609, judging whether the decoding information meets the preset decoding condition or not according to the error code information; if the decoding information satisfies the decoding condition, go to step S610; if the decoding information does not satisfy the decoding condition, performing step S611;

in the embodiment of the application, error code information used for representing the error code rate of the current decoding information is calculated according to the check matrix and the current decoding information, whether the error code information represents that the error code rate is 0 or not is judged, if the error code information represents that the error code rate is 0, the current decoding information is considered to meet the decoding condition, the page is decoded successfully (namely, the data is read successfully), and then the step S610 is executed to determine that the current decoding information is the decoding result of the page; if the error code information representation error code rate is not 0, the current decoding information is considered not to meet the decoding condition, the current decoding information is determined not to be the decoding result of the page, and step S611 is executed.

S610, determining that the decoding information is a decoding result of the page;

in the embodiment of the present application, the decoding result of a page may be regarded as read storage information in the page.

S611, judging whether the current reading times of the page exceed the preset highest reading times; if the current reading times of the page does not exceed the highest reading times, executing step S612;

in the embodiment of the present application, the preset maximum number of times of reading may be regarded as a preset upper limit of the number of times of reading.

And S612, reading the page once to acquire a voltage area to which the threshold voltage of each cell in the page belongs, and returning to execute the step S605.

In the embodiment of the present application, an upper limit of the number of readings (i.e., the highest number of readings) is preset, and if the number of readings of the current page does not exceed the upper limit of the number of readings, step S612 is executed, the page is read again to obtain a voltage region to which the threshold voltage of each cell in the page belongs, and then step S605 is executed again; and if the current reading times of the page exceed the upper limit of the reading times, determining that the page decoding fails, namely data reading fails.

In the embodiment of the application, if it is considered that one physical page in TLC includes three logical pages, which are an upper page, a middle page, and a lower page, when decoding a page, the upper page of the page may be decoded, the middle page of the page may be decoded, and the lower page of the page may be decoded. The implementation concept of decoding the upper page/middle page/lower page of the page is the same as that of decoding the page in the above embodiment, and will not be described in detail here.

The information decoding method provided by the present application as shown in fig. 6 is an improvement on the conventional information decoding method. The required minimum reading times N and the maximum reading times M are set, and the LLR value of the more reliable cell is obtained by increasing the reading times so as to reduce the error rate of code words (the error rate exceeds the error correction capability), provide the possibility of being corrected for the code words and enhance the LDPC error correction capability in a phase-changing manner.

Under the interference of noise, the variation of the threshold voltage of the cell has uncertainty. The threshold voltage of the cell is read for multiple times, the reading results of each time are different, the cells may be classified into different voltage regions, that is, the same cell corresponds to multiple LLR values, and the multiple LLR values corresponding to the same cell may not be unique. Table 2 is a schematic table of the mean LLR values of cells.

	Cell 1	Cell 2	Cell 3	……
					1^st Read	LLR1	LLR1	LLR5
2^nd Read	LLR2	LLR1	LLR4
					3^rd Read	LLR1	LLR1	LLR4
4^th Read	LLR1	LLR1	LLR4
					……
n^th Read	LLR2	LLR1	LLR5
					Final LLR	Sum1/n	Sum2/n	Sum3/n

Note: in table 2, Suml is the sum of n LLR values for Cell 1, and analogizes Cell 2 and Cell 3 … ….

Fig. 7 is a schematic diagram of an information decoding method according to an embodiment of the present application, and it can be seen from fig. 7 that an information decoding method according to an embodiment of the present application is as follows:

1. LLR table (pre-experiment): confirming region division voltages under different PE times and different storage time, counting the ratio of each state in different regions, further obtaining LLR values of different regions, and tabulating;

2. reading the order table (pre-experiment): determining the lower limit of the number of reading times required by UBER being lower than a threshold LUBER under different PE times and different storage times, and tabulating;

3. data writing and reading: writing the code word obtained by coding into a block of PE for a certain number of times, after storing for a certain time, searching an LLR table, searching for a corresponding region division voltage RVx-RVy, searching for a lower limit table of reading times, and judging the required minimum reading operation time N;

4. determining LLR value: using the region division voltage RVx-RVy, reading the voltage region to which the cell threshold voltage belongs for N times, wherein the cell corresponds to N LLR values, calculating the LLR mean value of the N LLRs, and endowing the LLR mean value to the cell;

5. LDPC soft decoding: soft decoding is carried out by using an LLR mean sum-product algorithm;

6. increasing the number of reading times: if the decoding fails, the reading times are increased, the LLR mean value is re-determined, and the decoding is performed again until the decoding succeeds or the reading times reach the reading time upper limit.

As shown in fig. 8, the apparatus includes:

a page determining unit 81, configured to determine a page in a memory to be subjected to information decoding, where the page is composed of at least one memory cell;

the information acquisition unit 82 is used for acquiring target basic information of the page, wherein the target basic information comprises the historical editing and erasing times of the page and the storage duration of the information stored in the current page in the page;

an information determining unit 83 configured to determine, according to the target base information, target confidence LLR information and a target minimum number of reads of the page, the target LLR information indicating at least one voltage region of the page and an LLR value of each voltage region;

the calculating unit 84 is configured to read a page with the lowest target reading frequency, obtain a voltage region to which a threshold voltage of each cell in the page belongs when the page is read each time, and calculate an LLR mean value of each cell in the page by using the target LLR information and the voltage region to which each threshold voltage of the cell belongs;

and the information decoding unit 85 is configured to decode the LLR mean values of all cells in the page to obtain a decoding result of the page.

In the embodiment of the present application, preferably, the information determining unit includes:

the device comprises a first determining unit, a second determining unit and a processing unit, wherein the first determining unit is used for determining a target page group of a page in a memory, the memory is composed of a plurality of page groups, and the page groups comprise a plurality of pages;

the device comprises a first obtaining unit, a second obtaining unit and a third obtaining unit, wherein the first obtaining unit is used for obtaining at least one LLR information and at least one lowest reading time corresponding to a target page group, the at least one LLR information comprises LLR information of each piece of basic information of the target page group in at least one piece of preset basic information, and the at least one lowest reading time comprises the lowest reading time of the target page group in each piece of basic information;

a second determining unit, configured to determine target LLR information of the target page group in the target base information from the at least one LLR information;

and the third determining unit is used for determining the target minimum reading times of the target page group in the target basic information from at least one minimum reading time.

In this embodiment of the present application, preferably, the calculating unit, configured to obtain a voltage region to which a threshold voltage of each cell in a page belongs when the page is read each time, and calculate an LLR mean value of each cell in the page by using the target LLR information and the voltage region to which each threshold voltage of the cell belongs, includes:

the second acquisition unit is used for acquiring a voltage area to which the threshold voltage of each cell in the page belongs when the page is read each time;

the fourth determining unit is used for determining LLR values of voltage areas to which the threshold voltages of the cells in the target LLR information belong;

the first calculating unit is used for calculating the LLR mean value of the cell according to the LLR values of the voltage areas to which all threshold voltages of the cell belong.

In this embodiment, preferably, the information decoding unit includes:

the second computing unit is used for decoding LLR mean values of all cells in the page to obtain decoding information of the page;

the third acquisition unit is used for acquiring a check matrix matched with the coding matrix adopted when the storage information is stored in the page;

the third calculating unit is used for calculating error code information according to the decoding information and the check matrix, and the error code information represents the error code rate of the decoding information;

the first judging unit is used for judging whether the decoding information meets the preset decoding condition according to the error code information;

and the fifth determining unit is used for determining that the decoding information meets the decoding condition according to the error code information and determining that the decoding information is the decoding result of the page.

Further, the information decoding unit provided in the embodiment of the present application further includes:

the second judgment unit is used for judging whether the current reading times of the page exceed the preset highest reading times or not;

and the return processing unit is used for reading the page once to obtain a voltage area to which the threshold voltage of each cell in the page belongs if the current reading times of the page does not exceed the highest reading times, and returning to execute the steps of obtaining the voltage area to which the threshold voltage of each cell in the page belongs when the page is read each time, and calculating the LLR mean value of each cell in the page by using the target LLR information and the voltage area to which each threshold voltage of the cell belongs.

An information reading apparatus provided in an embodiment of the present application further includes an LLR information generating unit, where the LLR information generating unit includes:

the selection unit is used for selecting unselected basic information from at least one preset basic information;

the sixth determining unit is used for determining threshold voltage distribution information of the currently selected basic information of the target page group, wherein the threshold voltage distribution information indicates the number of cells of at least one storage state of the target page group under each threshold voltage;

the fourth acquisition unit is used for acquiring at least one optimal reading reference voltage of the target page group according to the threshold voltage distribution information, wherein the at least one optimal reading reference voltage comprises a threshold voltage corresponding to an intersection point of two adjacent storage states in at least one storage state;

a seventh determining unit, configured to determine at least one target optimal read reference voltage of the target page group using the at least one optimal read reference voltage based on a threshold voltage distribution of each of the at least one memory state;

and the eighth determining unit is used for determining LLR information of the currently selected basic information of the target page group based on the at least one target optimal reading reference voltage.

In the embodiment of the present application, preferably, the seventh determining unit includes:

the first optimal reading reference voltage determining unit is used for determining each first optimal reading reference voltage from the at least one optimal reading reference voltage by utilizing the threshold voltage distribution of each storage state in the at least one storage state, and the data represented by two storage states adjacent to the first optimal reading reference voltage are different;

a second optimal read reference voltage determining unit, configured to determine two second optimal read reference voltages corresponding to each optimal read reference voltage according to preset floating-on-voltage information and floating-off-voltage information, where one second optimal read reference voltage is related to the floating-on-voltage information and the other second optimal read reference voltage is related to the floating-off-voltage information;

a target optimal read reference voltage determining unit for determining a third optimal read reference voltage respectively associated with each of the first optimal read reference voltages from all of the second optimal read reference voltages; the first optimal reading reference voltage, the second optimal reading reference voltage corresponding to the first optimal reading reference voltage, and the third optimal reading reference voltage form at least one target optimal reading reference voltage of the target page group.

Further, an embodiment of the present application further provides an electronic device, where the electronic device includes: the processor and the memory are connected through a communication bus; the processor is used for calling and executing the program stored in the memory; the memory is used for storing programs, and the programs are used for realizing the information decoding method provided by the embodiment of the application.

Furthermore, an embodiment of the present application further provides a computer-readable storage medium, where computer-executable instructions are stored in the computer-readable storage medium, and the computer-executable instructions are used to execute an information decoding method provided by the embodiment of the present application.

The embodiment of the application provides an information decoding method, an information decoding device, electronic equipment and a storage medium, wherein a page in a memory to be subjected to information decoding is determined, and the page is composed of at least one cell; acquiring target basic information of a page, wherein the target basic information comprises historical editing and erasing times of the page and storage duration of information stored in the current page in the page; determining target LLR information and target minimum reading times of the page according to the target basic information, wherein the target LLR information indicates at least one voltage area of the page and an LLR value of each voltage area; reading the page with the lowest target reading times, acquiring a voltage region to which the threshold voltage of each cell in the page belongs when the page is read each time, and calculating the LLR mean value of each cell in the page by using the target LLR information and the voltage region to which each threshold voltage of the cell belongs; and then decoding the LLR mean values of all the cells in the page to obtain a decoding result of the page.

Based on this, according to the information decoding method, the information decoding device, the electronic device and the storage medium provided by the embodiment of the application, the LLR mean values of the cells in the page are determined based on the target minimum reading times of the page, and then the LLR mean values of all the cells in the page are decoded to obtain the decoding result of the page, so that the threshold voltage fluctuation of the cells caused by random telegraph noise can be reduced, the LLR value given to the cells is inaccurate, the LDPC soft decoding efficiency is low, and the LDPC soft decoding error correction capability is limited.

The information decoding method, apparatus, electronic device and storage medium provided by the present invention are described in detail above, and the principle and implementation of the present invention are explained in this document by applying specific examples, and the description of the above examples is only used to help understanding the method and core ideas of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.

It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.

It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include or include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An information decoding method, comprising:

reading the threshold voltage of at least one memory cell for multiple times, and determining the voltage area to which the read threshold voltage belongs;

determining a plurality of LLR values corresponding to each cell by using a voltage region to which each threshold voltage of each cell belongs, and obtaining an LLR mean value of each cell according to the plurality of LLR values corresponding to each cell;

and decoding the LLR mean values of all the cells to obtain a decoding result.

2. The method of claim 1, wherein the reading the threshold voltage of at least one memory cell for a plurality of times, and the determining the voltage region to which the read threshold voltage belongs comprises:

reading the page with the lowest target reading times, and acquiring a voltage area to which the threshold voltage of each cell in the page belongs when the page is read each time.

3. The method of claim 2, wherein the determining a plurality of LLR values corresponding to each of the cells by using a voltage region to which each of the threshold voltages of each of the cells belongs, and obtaining an LLR mean value of each of the cells according to the plurality of LLR values corresponding to each of the cells comprises:

determining target confidence LLR information and target minimum reading times of the page according to the target basic information, wherein the target confidence LLR information indicates at least one voltage area of the page and an LLR value of each voltage area;

and calculating the LLR mean value of each cell in the page by using the target confidence LLR information and the voltage region of each threshold voltage of the cell.

4. The method of claim 3, wherein the determining the target confidence LLR information and the target minimum number of reads for the page according to the target base information comprises:

determining target confidence LLR information of the target page group in the target base information from the at least one LLR information;

5. The method of claim 3, wherein the calculating the LLR mean value of each cell in the page by using the target confidence LLR information and the voltage region to which each threshold voltage of the cell belongs comprises:

determining an LLR value of a voltage region to which a threshold voltage of the cell belongs in the target confidence LLR information;

and calculating the LLR mean value of the cell according to the LLR values of the voltage areas to which all the threshold voltages of the cell belong.

6. The method of claim 1, wherein the decoding the LLR mean values of all the cells to obtain a decoding result comprises:

decoding LLR mean values of all the cells in a page to obtain decoding information of the page;

calculating error code information according to the decoding information and the check matrix, wherein the error code information represents the error rate of the decoding information;

and if the decoding information meets the decoding condition according to the error code information, determining that the decoding information is the decoding result of the page.

7. The method of claim 6, wherein if it is determined from the error information that the decoding information does not satisfy the decoding condition, the method further comprises:

and if the current reading times of the page do not exceed the highest reading times, reading the page once to acquire a voltage region to which the threshold voltage of each cell in the page belongs, and returning to execute the step of acquiring the voltage region to which the threshold voltage of each cell in the page belongs when the page is read each time, and calculating the LLR mean value of each cell in the page by using the target confidence LLR information and the voltage region to which each threshold voltage of the cell belongs.

8. The method of claim 3, wherein generating at least one LLR information corresponding to a target page group comprises:

9. The method of claim 8, wherein determining at least one target optimal read reference voltage for the target page group using the at least one optimal read reference voltage based on a threshold voltage distribution for each of the at least one memory state comprises:

10. An information reading apparatus, characterized by comprising:

the computing unit is used for reading the threshold voltage of at least one memory cell for multiple times and determining the voltage area to which the read threshold voltage belongs; determining a plurality of LLR values corresponding to each cell by using a voltage region to which each threshold voltage of each cell belongs, and obtaining an LLR mean value of each cell according to the plurality of LLR values corresponding to each cell;

and the information decoding unit is used for decoding the LLR mean values of all the cells to obtain a decoding result.

11. An electronic device, comprising: the system comprises a processor and a memory, wherein the processor and the memory are connected through a communication bus; the processor is used for calling and executing the program stored in the memory; the memory for storing a program for implementing the information decoding method according to any one of claims 1 to 9.

12. A computer-readable storage medium having computer-executable instructions stored thereon for performing the information decoding method of any one of claims 1-9.