CN113118879B - Processing method of sintered silicon carbide for preventing fault holes from appearing on surface of mirror - Google Patents
Processing method of sintered silicon carbide for preventing fault holes from appearing on surface of mirror Download PDFInfo
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- CN113118879B CN113118879B CN202110414009.7A CN202110414009A CN113118879B CN 113118879 B CN113118879 B CN 113118879B CN 202110414009 A CN202110414009 A CN 202110414009A CN 113118879 B CN113118879 B CN 113118879B
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- silicon carbide
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B13/00—Machines or devices designed for grinding or polishing optical surfaces on lenses or surfaces of similar shape on other work; Accessories therefor
- B24B13/01—Specific tools, e.g. bowl-like; Production, dressing or fastening of these tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
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- Mechanical Engineering (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a processing method of sintered silicon carbide for preventing fault holes from appearing on the surface of a mirror surface. The method comprises the following steps: s1, carrying out fine grinding on the reaction sintering silicon carbide reflector by using a CCOS technology to enable the surface type to be converged to PV: 0.45um, RMS: 0.10 um; s2, polishing after fine grinding, wherein the polishing millstone material is asphalt, the abrasive material is cerium oxide, the polishing stage still utilizes the combination of an interferometer and a CCOS technology to polish, and whether white spots appear or not is observed under the condition of keeping the surface type unchanged, and the procedure is finished if the white spots do not appear; s3, carrying out modified film coating after polishing is finished; and S4, continuously polishing after modification until the product requirements are met. The invention can avoid the phenomena of surface faults, holes and the like of the mirror surface and can obtain the reflector with better surface shape and surface.
Description
The technical field is as follows:
the invention relates to a processing method of sintered silicon carbide for avoiding fault holes on the surface of a mirror surface, belonging to the technical field of optical equipment processing.
Background art:
the traditional RB-SiC processing flow comprises the processes of fine grinding, polishing, coating modification and polishing; whereas the fault holes now concentrate in the polishing phase. The traditional grinding has the defects of low processing efficiency and low precision convergence on RB-SiC with high hardness, and is only suitable for single piece small batch production; the ultra-precision grinding technology generates micro deformation on a workpiece, and the residual stress is large; the plasma gasification processing can cause defects such as holes on the surface of the mirror surface; the processing cost of ion beam processing is high, and projections are formed on the surface of the mirror surface due to inconsistent physical and chemical properties of Si phase and SiC phase in RB-SiC; in the chemical mechanical polishing, because the chemical properties of Si and SiC phases in RB-SiC are different, faults, holes and the like appear after polishing.
The invention content is as follows:
aiming at the existing problems, the invention provides a processing method of sintered silicon carbide for avoiding fault holes on the surface of a mirror surface, which is based on the traditional polishing technology, utilizes the characteristic adjustment processing link of RB-SiC to avoid the defects of the traditional method, combines the computer control optical surface forming technology, namely the CCOS technology, does not need high technical support, can avoid the phenomena of faults, holes and the like on the surface of the mirror surface, and can obtain a reflector with better surface shape and surface.
The above purpose is realized by the following technical scheme:
a processing method of sintered silicon carbide for avoiding fault holes on the surface of a mirror surface comprises the following steps:
s1, using CCOS technique to grind the reaction sintered silicon carbide mirror to converge the profile to PV: 0.45um, RMS: 0.10 um;
s2, polishing after fine grinding, wherein the polishing millstone material is asphalt, the abrasive material is cerium oxide, the polishing stage still utilizes the combination of an interferometer and a CCOS technology to polish, and whether white spots appear or not is observed under the condition of keeping the surface shape unchanged, and the procedure is finished if the white spots do not appear;
s3, modifying and coating a film after polishing;
and S4, after the modification is finished, continuing polishing until the product requirement is met.
The processing method of the sintered silicon carbide for avoiding the fault holes on the surface of the mirror surface comprises the following specific steps of S1:
s11, obtaining data by utilizing a three-coordinate measurement surface type, then finely grinding by utilizing a CCOS technology, selecting 7-8um diamond powder polishing powder as an abrasive, finely grinding for one round to enable the surface of the mirror to reach the measurement standard of an interferometer, and then replacing surface type measurement with interferometer measurement;
s12, after the mirror surface reaches the measuring standard of the interferometer, the grinding material is replaced by 5-6um diamond powder, and the mirror surface is finely ground until the final surface type result is PV: 4.65um, RMS: 1.22 um;
s13, after the face shape is stable, replacing 3-4um diamond powder to continue fine grinding, and the result of the fine grinding till the final face shape is pv: 0.68um, RMS: 0.15 um;
s14, finally, replacing 0.5-1um of diamond powder for fine grinding, wherein the fine grinding finally obtains the surface type PV: 0.45um, RMS: 0.1 um.
Has the advantages that:
the invention provides a brand new method for processing a sintered reflector, which can effectively solve the problem that the fault hole phenomenon appears on the mirror surface in the processing process; currently, 120mm silicon carbide mirrors can be surface-type converged to PV at the fine grinding stage: 0.45um, RMS: 0.10 um.
Description of the drawings:
FIG. 1 is a prior art microscopic representation of a mirror before polishing.
FIG. 2 is a schematic view of a prior art polished mirror microscope.
The specific implementation mode is as follows:
as can be seen from the microscopic views before and after polishing in fig. 1 and 2, the absence of Si during polishing is the main cause of voids, which did not occur during the fine grinding stage. Therefore, the invention provides a processing method of sintered silicon carbide for avoiding fault holes on the surface of a mirror, which converges the surface shape of the mirror to an ideal level in a fine grinding stage, reduces the consumption in a polishing stage and avoids the holes caused by the loss of Si phase. The method of the invention comprises the following steps:
a processing method of sintered silicon carbide for avoiding fault holes on the surface of a mirror surface comprises the following steps:
s1, using CCOS technique to grind the reaction sintered silicon carbide mirror to converge the profile to PV: 0.45um, RMS: 0.10 um;
s2, polishing after fine grinding, wherein the polishing millstone material is asphalt, the abrasive material is cerium oxide, the polishing stage still utilizes the combination of an interferometer and a CCOS technology to polish, and whether white spots appear or not is observed under the condition of keeping the surface shape unchanged, and the procedure is finished if the white spots do not appear;
s3, modifying and coating a film after polishing;
and S4, continuing polishing after the modification is finished until the product requirement is met.
The processing method of the sintered silicon carbide for avoiding the fault holes on the surface of the mirror surface comprises the following specific steps of S1:
s11, obtaining data by utilizing a three-coordinate measurement surface type, then finely grinding by utilizing a CCOS technology, selecting 7-8um diamond powder polishing powder as an abrasive, finely grinding for one round to enable the surface of the mirror to reach the measurement standard of an interferometer, and then replacing surface type measurement with interferometer measurement; the CCOS parameters are set automatically based on the actual lens size material, and the abrasive disc size.
S12, after the mirror surface reaches the measurement standard of the interferometer, the abrasive is replaced by 5-6um diamond powder, the mirror surface is finely ground until the difference between the front and rear results is not large, and the final surface type result obtained by the fine grinding is PV: 4.65um, RMS: 1.22 um;
s13, after the face shape is stable, replacing 3-4um diamond powder to continue fine grinding, wherein the difference between the previous result and the next result is not large in the fine grinding, and the final face shape result obtained by the fine grinding is pv: 0.68um, RMS: 0.15 um;
s14, finally, replacing 0.5-1um of diamond powder for fine grinding, wherein the fine grinding is used for improving the specular reflectivity on the basis of keeping the specular surface shape, and the fine grinding is used for finally obtaining the surface shape PV: 0.45um, RMS: 0.1 um. PV in this embodiment is the difference between the peak and the valley, RMS is the root mean square value, and is a parameter indicating the accuracy of the surface shape in the art.
The above embodiments are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modification made on the basis of the technical solution according to the technical idea of the present invention falls within the protection scope of the present invention. The technology not related to the invention can be realized by the prior art.
Claims (1)
1. A processing method of sintered silicon carbide for avoiding fault holes on the surface of a mirror surface is characterized by comprising the following steps: the method comprises the following steps:
s1, using CCOS technique to grind the reaction sintered silicon carbide mirror to converge the profile to PV: 0.45um, RMS: 0.10 um;
s2, polishing after fine grinding, wherein the polishing millstone material is asphalt, the abrasive material is cerium oxide, the polishing stage still utilizes the combination of an interferometer and a CCOS technology to polish, and whether white spots appear or not is observed under the condition of keeping the surface shape unchanged, and the procedure is finished if the white spots do not appear;
s3, modifying and coating a film after polishing;
s4, continuing polishing after the modification is finished until the product requirement is met;
the specific method of step S1 is:
s11, obtaining data by utilizing a three-coordinate measurement surface type, then finely grinding by utilizing a CCOS technology, selecting 7-8um diamond powder polishing powder as an abrasive, finely grinding for one round to enable the surface of the mirror to reach the measurement standard of an interferometer, and then replacing surface type measurement with interferometer measurement;
s12, after the mirror surface reaches the measuring standard of the interferometer, the grinding material is replaced by 5-6um diamond powder, and the mirror surface is finely ground until the final surface type result is PV: 4.65um, RMS: 1.22 um;
s13, after the face shape is stable, replacing 3-4um diamond powder to continue fine grinding, and the result of the fine grinding till the final face shape is pv: 0.68um, RMS: 0.15 um;
s14, finally, replacing 0.5-1um of diamond powder for fine grinding, wherein the fine grinding finally obtains the surface type PV: 0.45um, RMS: 0.1 um.
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| WO2016081951A1 (en) * | 2014-11-23 | 2016-05-26 | M Cubed Technologies | Wafer pin chuck fabrication and repair |
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| CN102848287A (en) * | 2012-09-14 | 2013-01-02 | 中国人民解放军国防科学技术大学 | Combination machining method for removing high-frequency errors in optical elements |
| CN104385064A (en) * | 2014-10-14 | 2015-03-04 | 中国科学院光电技术研究所 | Large-caliber plane machining method combining numerical control small tool and ring polishing machine |
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