CN113113317A - Preparation method of circulating cooling system based on nanometer limited hydraulic pressure thermal effect - Google Patents
Preparation method of circulating cooling system based on nanometer limited hydraulic pressure thermal effect Download PDFInfo
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- 230000000694 effects Effects 0.000 title claims abstract description 29
- 238000001816 cooling Methods 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 58
- 239000010703 silicon Substances 0.000 claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 57
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000002061 nanopillar Substances 0.000 claims abstract description 28
- 230000008859 change Effects 0.000 claims abstract description 24
- 239000003507 refrigerant Substances 0.000 claims abstract description 19
- 239000007788 liquid Substances 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 239000003822 epoxy resin Substances 0.000 claims abstract description 7
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 7
- 238000005266 casting Methods 0.000 claims abstract description 4
- 230000017525 heat dissipation Effects 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052582 BN Inorganic materials 0.000 claims description 8
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 8
- 230000005684 electric field Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 229910021389 graphene Inorganic materials 0.000 claims description 6
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 claims description 3
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000005057 refrigeration Methods 0.000 abstract description 36
- 238000009413 insulation Methods 0.000 abstract description 2
- 230000006837 decompression Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 11
- 239000002033 PVDF binder Substances 0.000 description 10
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 10
- 239000002041 carbon nanotube Substances 0.000 description 6
- 229910021393 carbon nanotube Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000005094 computer simulation Methods 0.000 description 5
- 238000005457 optimization Methods 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
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- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 239000002071 nanotube Substances 0.000 description 3
- 239000011343 solid material Substances 0.000 description 3
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- 229920001746 electroactive polymer Polymers 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000003134 recirculating effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
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- 150000008282 halocarbons Chemical class 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- -1 hydroxyl modified graphene Chemical class 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
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- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
The invention discloses a preparation method of a circulating cooling system based on a nanometer limited hydraulic pressure thermal effect, which comprises the following steps of integrating an electronic chip needing heat dissipation on a silicon wafer, wherein the silicon wafer is provided with a groove; then depositing a limited layer in the groove; secondly, preparing a rigid nano-pillar array on the surface of the silicon wafer, and enabling the nano-pillar array to be located in a groove of the silicon wafer and to be contacted with a limited layer; then casting an epoxy resin film in the groove, separating a silicon wafer and a silicon wafer after cooling, and filling a liquid refrigerant in the obtained nano micropore array through vapor pressure; and finally, depositing a piezoelectric film on the silicon wafer. The piezoelectric film drives the nano-column to move so as to realize pressurization and decompression of the refrigeration medium, and induce the water limited in the nano-micropores to generate phase change, thereby realizing refrigeration. The refrigerating system has the advantages of large heat insulation temperature, wide working temperature, clean and pollution-free refrigerating medium and the like.
Description
Technical Field
The invention relates to the field of refrigeration of electronic components, in particular to a preparation method of a circulating cooling system based on a nanometer limited water pressure thermal effect.
Background
With the continuous development of science and technology and social economy, the demand of people for refrigeration is continuously improved. The traditional refrigeration technology based on gas compression is not only low in efficiency, but also serious ozone layer hole effect and greenhouse effect are caused by the heavy use of halogenated hydrocarbon refrigerant. In addition, with the rapid development of large-scale integrated circuit technology, the electronic chip technology is continuously pushed towards low power consumption, high performance and miniaturization, the heat flux density of the chip becomes higher and higher, and how to effectively dissipate heat becomes a bottleneck problem which restricts the performance of electronic components. The development of more advanced refrigeration technologies is urgently required to solve these problems.
In recent years, solid-state phase-change refrigeration technology based on phase-change thermal effect of solid materials has been widely studied. The solid refrigeration technology is a technology for generating temperature change by changing the degree of disorder of physical freedom (such as molecular polarization, magnetic moment and the like) of a special solid material under the action of an external field, and can be roughly divided into magnetocaloric refrigeration, electrothermal refrigeration, elastic thermal refrigeration and pressure thermal refrigeration. The solid phase-change refrigeration has the advantages of no pollution, low noise, high efficiency, energy conservation and the like, but also has the defects of high material price, overlarge driving external field, small phase-change latent heat and the like, and further improvement of the refrigeration efficiency and wide application of the technology are hindered.
Compared with solid refrigeration materials, liquid substances such as water, ethanol and the like can contain larger latent heat in the phase change process. Meanwhile, water is used as a refrigerant, so that the environment is not polluted, and the cost is low. However, in a conventional refrigeration cycle based on a phase change of a physical body, a refrigerant is required to evaporate and absorb heat. Unfortunately, the boiling point of water is too high to facilitate cycle refrigeration around room temperature. In addition, although the latent heat of phase change is large when water is used as the refrigerant, the volume of generated water vapor is far larger than that of the commercial refrigerant under the working pressure, so that the compression work is overlarge, the refrigeration efficiency of the water as the refrigerant is far lower than that of freon and solid materials, and the large-scale application is not facilitated.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a method for preparing a circulating cooling system based on a nanometer limited water pressure heat effect aiming at the defects related in the background technology, and provide a strategy for realizing high-efficiency refrigeration at room temperature by using water as a green refrigerant. The refrigeration technology is not limited to water, is also suitable for polar liquid such as ethanol and the like, and is expected to be developed into a stable and efficient circulating cooling system with large isothermal entropy, high heat insulation temperature, wide refrigeration interval.
The invention adopts the following technical scheme for solving the technical problems:
the preparation method of the circulating cooling system based on the nanometer limited hydraulic pressure thermal effect comprises the following steps:
the method comprises the following steps: integrating an electronic chip needing heat dissipation on a silicon wafer, wherein an edge groove is formed in the end face of one side, far away from the electronic chip, of the silicon wafer;
step two: depositing a limited layer with good heat conduction performance in the groove of the silicon wafer;
step three: preparing a rigid nano-pillar array on the surface of the silicon wafer, and inverting the rigid nano-pillar array on the groove of the silicon wafer so that the nano-pillar array on the silicon wafer is positioned in the groove of the silicon wafer and is in contact with the limited layer in the groove;
step four: casting an epoxy resin film in the groove of the silicon wafer, cooling and separating the silicon wafer from the silicon wafer to form a nano micropore array matched with the nano column array on the surface of the silicon wafer in the epoxy resin film on the limited layer in the groove of the silicon wafer;
step five: filling a liquid refrigerant into the nano micropores of the nano micropore array through vapor pressure;
step six: and depositing a piezoelectric film on the end face of the silicon wafer, which is far away from one side of the nano-pillar array, so as to accurately control the nano-pillar array to move up and down through an external electric field, further induce the refrigerant limited in the nano-micropores to generate phase change, and radiate the electronic chip integrated on the silicon wafer.
As a further optimization scheme of the preparation method of the recirculating cooling system based on the nanometer limited hydraulic pressure thermal effect, the limited layer in the second step is made of any one of graphene, hexagonal boron nitride and molybdenum disulfide.
As a further optimization scheme of the preparation method of the circulation cooling system based on the nano limited hydraulic pressure thermal effect, the nano column array in the third step is prepared by any one of a silicon nano column, a sealed carbon nano tube and a sealed boron nitride nano tube.
As a further optimization scheme of the preparation method of the circulation cooling system based on the nanometer limited water pressure thermal effect, the liquid refrigerant in the fifth step is prepared from water or ethanol.
As a further optimization scheme of the preparation method of the recirculating cooling system based on the nanometer limited water pressure thermal effect, the piezoelectric film in the sixth step is made of vinylidene fluoride.
As a further optimization scheme of the preparation method of the circulating cooling system based on the nanometer limited hydraulic pressure thermal effect, the piezoelectric film in the sixth step is replaced by a film material with an electrostrictive effect or a magnetodeformation effect.
Compared with the prior art, the invention adopting the technical scheme has the following technical effects:
1. the invention provides a preparation method of a circulating cooling system based on a nanometer limited water pressure heat effect, which can be applied to refrigeration of electronic chips and other components. Freon and its alternatives are widely used as refrigerants in conventional gas compression refrigeration, but have serious environmental hazards. The nano refrigeration system provided by the discovery uses cheap, environment-friendly and pollution-free water as a refrigerant, is suitable for other polar liquids such as ethanol and the like, and widens the application range of the system.
2. By confining water molecules in the channels of nanometer scale, high van der Waals pressure between the nanometer columns and the confined wall surfaces can enable the water molecules to form an ordered ice state at room temperature, and the water molecules can be changed into a disordered liquid state by decompressing. This ordered to unordered change can produce a temperature change and entropy change that is significantly higher than that of solid refrigeration materials. Most importantly, the refrigeration system can operate efficiently and produce significant refrigeration over a large temperature range around room temperature.
3. The refrigeration effect of the system can be further improved by changing the density of water molecules in the system and optimizing the hydrophilicity and hydrophobicity of the limited layer material so as to adjust the interaction strength of water and solid.
Drawings
FIG. 1 is a schematic view of a process for preparing a circulating cooling system according to the present invention;
FIG. 2 is a schematic view of a circulating cooling system constructed in accordance with the present invention;
FIG. 3 is a graph showing adiabatic temperature changes at different operating temperatures obtained in examples 1 to 3 of the present invention;
fig. 4 is a graph showing the maximum adiabatic temperature change obtained at room temperature using a confined layer and a nanopillar array having different hydrophilicity and hydrophobicity, obtained in examples 4 to 5 of the present invention.
In the figure, 1-silicon wafer, 2-confinement layer, 3-nano column, 4-epoxy film, 5-refrigeration medium, 6-piezoelectric film.
Detailed Description
The technical scheme of the invention is further explained in detail by combining the attached drawings:
the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, components are exaggerated for clarity.
As shown in figure 1, the invention discloses a preparation method of a circulating cooling system based on a nanometer limited hydraulic pressure thermal effect, which comprises the following steps:
the method comprises the following steps: integrating an electronic chip needing heat dissipation on a silicon wafer, wherein an edge groove is formed in the end face of one side, far away from the electronic chip, of the silicon wafer;
step two: depositing a limited layer with good heat conduction performance in the groove of the silicon wafer;
step three: preparing a rigid nano-pillar array on the surface of the silicon wafer, and inverting the rigid nano-pillar array on the groove of the silicon wafer so that the nano-pillar array on the silicon wafer is positioned in the groove of the silicon wafer and is in contact with the limited layer in the groove;
step four: casting an epoxy resin film in the groove of the silicon wafer, cooling and separating the silicon wafer from the silicon wafer to form a nano micropore array matched with the nano column array on the surface of the silicon wafer in the epoxy resin film on the limited layer in the groove of the silicon wafer;
step five: filling a liquid refrigerant into the nano micropores of the nano micropore array through vapor pressure;
step six: and depositing a piezoelectric film on the end face of the silicon wafer, which is far away from one side of the nano-pillar array, so as to accurately control the nano-pillar array to move up and down through an external electric field, further induce the refrigerant limited in the nano-micropores to generate phase change, and radiate the electronic chip integrated on the silicon wafer.
The resulting hydronic cooling system is shown in fig. 2.
The limited layer in the second step can be made of any one of graphene, hexagonal boron nitride and molybdenum disulfide; the nano-column array in the third step can be made of any one of a silicon nano-column, a sealed carbon nano-tube and a sealed boron nitride nano-tube; the liquid refrigerant in the step five is prepared from water or ethanol and is an environment-friendly polar liquid; the piezoelectric film in the sixth step can be made of vinylidene fluoride, and can also be replaced by a film material with an electrostrictive or magnetodeformation effect, such as an electroactive polymer (EAP) film, a magnetic composite film, and the like.
Example 1:
the graphene layer is used as a limited layer, the sealed carbon nano tube is used as a nano column, water is used as a refrigeration medium, and an organic material of polyvinylidene fluoride (PVDF) is used as a piezoelectric film. By applying an external electric field, the piezoelectric film can deform and drive the nano-pillars to move up and down integrally. At room temperature (T 0= 298K) when we reduce the distance between the nano-pillars and the confined layer, disordered to ordered phase transition of water molecules occurs, the temperature of water will rise under adiabatic conditions, and the rising heat can be slowly dissipated through the nano-pillars; when we rapidly separate the nano-column from the limited layer, the water molecules can generate ordered to disordered phase change, and the temperature of water can be reduced, so that the refrigeration of the electronic chip integrated on the silicon wafer is realized. The adiabatic temperature change Δ resulting from the process is estimated by computer simulationTApproaching 50K, see fig. 3.
Example 2:
the graphene layer is used as a limited layer, the sealed carbon nano tube is used as a nano column, water is used as a refrigeration medium, and an organic material of polyvinylidene fluoride (PVDF) is used as a piezoelectric film. By applying an external electric field, the piezoelectric film can deform and drive the nano-pillars to move up and down integrally. When the system is operating at a lower temperature, e.g.T 0= 250K, when we reduce the distance between the nanopillar and the limited layer, the water molecule undergoes a disordered-to-ordered phase change, which causes a temperature rise, the rising heat can be released slowly through the nanopillar, when we increase the distance between the nanopillar and the limited layer rapidly, the water molecule undergoes an ordered-to-disordered phase change, the temperature of the water decreases, and thus the refrigeration of the electronic chip integrated on the silicon wafer is realized. The adiabatic temperature change Δ resulting from the process is estimated by computer simulationTApproaching 40K, see fig. 3.
Example 3:
the graphene layer is used as a limited layer, the sealed carbon nano tube is used as a nano column, water is used as a refrigeration medium, and an organic material of polyvinylidene fluoride (PVDF) is used as a piezoelectric film. By applying an external electric field, the piezoelectric film can deform and drive the nano-pillars to move up and down integrally. When the system is operated at a higher temperature, e.g.T 0= 350K, when we reduce the distance between the nano-column and the limited layer, the water molecules have disordered-to-ordered phase transition, temperature rise can be generated, the raised heat can be released slowly through the nano-column, when we increase the distance between the nano-column and the limited layer rapidly, the water molecules have disordered-to-ordered phase transition, and the temperature of water can be reduced, so that the electronic chip integrated on the silicon wafer can be refrigerated. The adiabatic temperature change Δ resulting from the process is estimated by computer simulationTApproaching 110K, see fig. 3.
Example 4:
a hydrophobic boron nitride film is used as a limited layer, a sealed boron nitride nanotube is used as a nano-column, water is used as a refrigeration medium, and an organic material of polyvinylidene fluoride (PVDF) is used as a piezoelectric film. By applying an external electric field, the piezoelectric film can deform and drive the nano-pillars to move up and down integrally. When in useThe system is at room temperature (T 0= 298K), when we reduce the distance between the nano-column and the limited layer, the water molecules have disordered-to-ordered phase change, the temperature is raised, the raised heat can be released slowly through the nano-column, when we increase the distance between the nano-column and the limited layer rapidly, the water molecules have disordered-to-ordered phase change, the temperature of water is reduced, and therefore the electronic chip integrated on the silicon wafer is cooled. The adiabatic temperature change Δ resulting from the process is estimated by computer simulationTApproaching 60K, see fig. 4.
Example 5:
the method comprises the steps of using hydroxyl modified graphene as a hydrophilic limited layer, using a modified sealed carbon nano tube as a nano column, using water as a refrigeration medium, and using an organic material of polyvinylidene fluoride (PVDF) as a piezoelectric film. By applying an external electric field, the piezoelectric film can deform and drive the nano-pillars to move up and down integrally. When the system is at room temperature (T 0= 298K), when we reduce the distance between the nano-column and the limited layer, the water molecules have disordered-to-ordered phase change, the temperature is raised, the raised heat can be released slowly through the nano-column, when we increase the distance between the nano-column and the limited layer rapidly, the water molecules have disordered-to-ordered phase change, the temperature of water is reduced, and therefore the electronic chip integrated on the silicon wafer is cooled. The adiabatic temperature change Δ resulting from the process is estimated by computer simulationTApproaching 56K, see fig. 4.
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The above-mentioned embodiments, objects, technical solutions and advantages of the present invention are further described in detail, it should be understood that the above-mentioned embodiments are only illustrative of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. The preparation method of the circulating cooling system based on the nanometer limited hydraulic pressure thermal effect is characterized by comprising the following steps of:
the method comprises the following steps: integrating an electronic chip needing heat dissipation on a silicon wafer, wherein an edge groove is formed in the end face of one side, far away from the electronic chip, of the silicon wafer;
step two: depositing a limited layer with good heat conduction performance in the groove of the silicon wafer;
step three: preparing a rigid nano-pillar array on the surface of the silicon wafer, and inverting the rigid nano-pillar array on the groove of the silicon wafer so that the nano-pillar array on the silicon wafer is positioned in the groove of the silicon wafer and is in contact with the limited layer in the groove;
step four: casting an epoxy resin film in the groove of the silicon wafer, cooling and separating the silicon wafer from the silicon wafer to form a nano micropore array matched with the nano column array on the surface of the silicon wafer in the epoxy resin film on the limited layer in the groove of the silicon wafer;
step five: filling a liquid refrigerant into the nano micropores of the nano micropore array through vapor pressure;
step six: and depositing a piezoelectric film on the end face of the silicon wafer, which is far away from one side of the nano-pillar array, so as to accurately control the nano-pillar array to move up and down through an external electric field, further induce the refrigerant limited in the nano-micropores to generate phase change, and radiate the electronic chip integrated on the silicon wafer.
2. The method for preparing the circulation cooling system based on the nanometer limited hydraulic pressure thermal effect as claimed in claim 1, wherein the limited layer in the second step is made of any one of graphene, hexagonal boron nitride and molybdenum disulfide.
3. The method for preparing the circulation cooling system based on the nanometer limited hydraulic pressure thermal effect as claimed in claim 1, wherein the nanometer column array in the third step is made of any one of silicon nanometer column, sealed carbon nanometer tube and sealed boron nitride nanometer tube.
4. The method for preparing the circulation cooling system based on the nano limited hydraulic pressure thermal effect as claimed in claim 1, wherein the liquid refrigerant in the step five is prepared by water or ethanol.
5. The method for preparing the circulation cooling system based on the nanometer limited hydraulic pressure thermal effect as claimed in claim 1, wherein the piezoelectric film in the sixth step is made of vinylidene fluoride.
6. The method for preparing the circulation cooling system based on the nanometer limited hydraulic pressure thermal effect as claimed in claim 1, wherein the piezoelectric film in the sixth step is replaced by a film material with an electrostrictive effect or a magnetodeformative effect.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113831895A (en) * | 2021-07-22 | 2021-12-24 | 中国科学院金属研究所 | Application of carborane material in solid refrigeration |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090000651A1 (en) * | 2005-08-19 | 2009-01-01 | The University Of Akron | Nanoporous Materials for Use in the Conversion of Mechanical Energy and/or Thermal Energy Into Electrical Energy |
| CN104081518A (en) * | 2012-01-10 | 2014-10-01 | 原子能和替代能源委员会 | Passive thermal management device |
| CN110138263A (en) * | 2019-06-13 | 2019-08-16 | 西安交通大学 | A method of micro-structural piezoelectric harvester is prepared based on soluble mould |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090000651A1 (en) * | 2005-08-19 | 2009-01-01 | The University Of Akron | Nanoporous Materials for Use in the Conversion of Mechanical Energy and/or Thermal Energy Into Electrical Energy |
| CN104081518A (en) * | 2012-01-10 | 2014-10-01 | 原子能和替代能源委员会 | Passive thermal management device |
| CN110138263A (en) * | 2019-06-13 | 2019-08-16 | 西安交通大学 | A method of micro-structural piezoelectric harvester is prepared based on soluble mould |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113831895A (en) * | 2021-07-22 | 2021-12-24 | 中国科学院金属研究所 | Application of carborane material in solid refrigeration |
| CN113831895B (en) * | 2021-07-22 | 2023-10-03 | 中国科学院金属研究所 | Application of carborane material in solid refrigeration |
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