CN113098396B - Oscillator device comprising spin hall oscillator array with spin wave coupling - Google Patents
Oscillator device comprising spin hall oscillator array with spin wave coupling Download PDFInfo
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Abstract
The present invention provides an oscillator device comprising a spin hall oscillator array of spin wave coupling. The output power of a single spin hall oscillator is generally in the order of microwatts, and the actual application needs are difficult to meet. To increase the output power, an array of multiple spin hall oscillators may be employed, but synchronization problems exist between the multiple spin hall oscillators. In some embodiments of the present invention, adjacent spin hall oscillators are connected to each other using a resonance enhancing unit. The spin hall oscillators can excite spin waves in the resonance enhancing units, and can enable adjacent spin hall oscillators to be magnetically coupled with each other, so that the spin hall oscillators can rapidly resonate to the same frequency and phase during operation, and the output power of oscillation signals of the whole device is improved. The oscillator device has the advantages of high coupling strength, short delay time, obviously improved coupling performance, considerable improvement on the distance between spin Hall oscillators and the like, and has a simpler structure and easy manufacture.
Description
Technical Field
The present invention relates generally to the field of spintronics, and more particularly to an oscillator device comprising a spin hall oscillator array of spin wave coupling.
Background
The oscillator is an electronic device for converting a direct current signal into an alternating current signal, and common electronic oscillators comprise an RC oscillator, an LC oscillator, a crystal oscillator and the like, and are widely applied to important fields such as radio communication, biological sensors, microwave technology and the like at present. The Spin transfer torque nanometer oscillator (Spin-Transfer Torque Nano Oscillator, STTNO) is a novel oscillator developed on the basis of the STT effect, has excellent performances of simple structure, low power consumption, small size, high frequency, high sensitivity, easy integration, wide working temperature range and the like compared with the traditional electronic oscillator, and has wide application prospect. Spin hall oscillators also have transient memory properties and nonlinear effects that can play a neuronal role in neuromorphic computation for developing hardware neural networks that resemble human brain functions. The basic structure of the oscillator is a sandwich structure formed by a magnetic film (FM 1)/a nonmagnetic film (NM)/a magnetic film (FM 2), electrons spin polarized by the FM1 layer penetrate through the NM layer and enter the FM2 layer, a moment effect can be generated on the magnetic moment in the FM2 layer of the magnetic film, and the magnetic moment direction in the FM2 layer can be promoted to advance around one direction so as to generate a microwave oscillation output signal. However, due to the restriction of spin polarization, a higher current density is often required in the process of realizing microwave oscillation, which not only increases energy consumption, but also causes noise to affect the quality of the output microwave signal.
To solve this problem, a novel Spin nanooscillator based on Spin-Orbit Torque (SOT), also called Spin hall nanooscillator or Spin hall oscillator, has been proposed, which drives a magnetic moment precession using a Spin hall effect, and can reduce the current density required for the Spin oscillator to some extent. However, since the microwave output power of a single spin hall oscillator is on the order of microwatts, there is a considerable time from its practical use. In order to solve the existing problems, it is attempted to combine a plurality of spin hall oscillators into an array so that they can jointly output microwaves, thereby increasing the total power. However, how to lock multiple spin oscillators at the same frequency remains a problem to be overcome. To solve this problem, there have been various attempts in industry and academia at present, such as applying the same bias current to a plurality of oscillators to make them oscillate synchronously, or applying an external excitation signal to make a plurality of oscillators oscillate synchronously or to lock the phases of the excitation signal and the oscillation phase of the oscillator together. These approaches, while increasing the total output power, also greatly increase the complexity of the system, making spin hall oscillator arrays incapable of exhibiting unique advantages over conventional electronic microwave transmission systems.
Disclosure of Invention
In view of the above and other problems in the prior art, embodiments of the present invention provide a spin hall oscillator array of spin wave coupling that is capable of resonating individual spin hall oscillators to the same frequency by spin wave coupling. The device has the advantages of simple structure, high coupling strength and short delay time, and in addition, the coupling performance is obviously improved, and the distance between spin Hall oscillators is obviously improved.
According to an exemplary embodiment, there is provided an oscillator device including an array of spin hall oscillators, each spin hall oscillator including a spin orbit coupling layer, a free magnetic layer formed on the spin orbit coupling layer, an intermediate layer formed on the free magnetic layer, and a fixed magnetic layer formed on the intermediate layer, wherein the free magnetic layer of each spin hall oscillator is connected with the free magnetic layer of an adjacent spin hall oscillator through a resonance enhancing unit.
In an exemplary embodiment, each spin hall oscillator further includes a first electrode formed on the fixed magnetic layer, and second and third electrodes formed on the spin orbit coupling layer at opposite sides of the free magnetic layer, the second and third electrodes for applying an in-plane current flowing through the spin orbit coupling layer, one of the second and third electrodes and the first electrode for applying a vertical current flowing through the spin hall oscillator.
In an exemplary embodiment, the array of spin hall oscillators is arranged in a row and column direction, and the spin orbit coupling layer extends in the row direction, the column direction, or an oblique direction at an angle to the row and column directions.
In an exemplary embodiment, a plurality of spin hall oscillators formed on the same spin orbit coupling layer share two electrodes formed on the same spin orbit coupling layer on both sides of the plurality of spin hall oscillators as the second electrode and the third electrode, or electrodes are formed on both sides of the plurality of spin hall oscillators and between adjacent spin hall oscillators among the plurality of spin hall oscillators as the second electrode and the third electrode of each spin hall oscillator.
In an exemplary embodiment, the resonance enhancing unit is formed of a magnetic insulating material.
In an exemplary embodiment, the resonance enhancing unit includes one or more of an oxide of a metal material such as Fe, co, ni, cu, zn, mn, ba, sr, mg, pb, Y and an alloy oxide of a rare earth element such as Sm, nd and a 3d transition metal element such as Fe, co, ni.
In an exemplary embodiment, the resonance enhancing unit is in direct contact with a portion of the upper surface of the spin-orbit coupling layer or is separated from the upper surface of the spin-orbit coupling layer by a non-magnetic insulating layer comprising one or more of MgO、Al2O3、Al2MgO4、ZnO、ZnMgO2、TiO2、HfO2、TaO2、Cd2O3、ZrO2、Ga2O3、Sc2O3、V2O5、Fe2O3、Co2O3、NiO、SiO2、Si3N4、BN、AlN.
In an exemplary embodiment, the spin-orbit coupling layer is formed of a material having a spin hall effect including a heavy metal material including one or more of Cr, Y, zr, nb, mo, tc, ru, rh, pd, hg, cd, in, sn, sb, hf, ta, β -Ta, W, β -W, re, os, ir, pt, au, hg, tl, pb, bi, po, and Sm, an antiferromagnetic material including one or more of IrMn and PtMn, wherein the ratio content of each element is any value greater than 0 and less than 1, or a topological insulator material including one or more of CaTe、HgTe、CdTe、AlSb、InAs、GaSb、AlSB、BiSe、SnTe、Bi1-xSbx、Bi2Se3、Sb2Te3、Bi2Te3、(CrxV1-x)y(BizSb1-z)2-yTe3、Bi2Te2Se、(Bi,Sb)2Te3、Bi2-xSbxTe3-ySey、Sb2Te2Se、TlBiSe2、TlBiTe2、TlBi(S,Se)2、MnBi2Te4、V(Bi,Sb)2Te3、PbBi2Te4、GeBi2Te4、PbSb2Te4、PbBi4Te7、MnBi4Te7、MnBi6Te10、CrMnI3、MnSiTe3、PdCl3、PdBr3、PdI3、PtI3、PtBr3、NiBr3、VBr3、FeBr3、FeI3、RuI3、CoBr2、CrP2S6、SnTe、Pb1-xSnxTe、Bi2-xCrxSe3、BiTeCl、HgTe/CdTe、Ag2Te、SmB6、Bi14Rh3I9、LuBiPt、DyBiPt、GdBiPt and Nd 2(Ir1-xRhx)2O7.
In an exemplary embodiment, the intermediate layer is formed of a non-magnetically conductive material comprising one or more metals of Ti, V, zn, cu, ag, au, nb, ta, cr, mo, W, re, ru, os, rh, ir, pt, hf, cd, zr, sc, or comprising SiC, C, or a ceramic material, or a non-magnetically insulating material comprising one or more of MgO、Al2O3、Al2MgO4、ZnO、ZnMgO2、TiO2、HfO2、TaO2、Cd2O3、ZrO2、Ga2O3、Sc2O3、V2O5、Fe2O3、Co2O3、NiO、CuO.
In an exemplary embodiment, the free magnetic layer, the intermediate layer, and the fixed magnetic layer of the spin hall oscillator have a circular, elliptical, triangular, square, rectangular, regular pentagonal, regular hexagonal, circular or elliptical ring shape.
Embodiments of the present invention achieve a number of beneficial technical effects, such as:
1. Under the same excitation current condition, compared with a spin Hall oscillator array with simple demagnetizing coupling, the array containing the resonance enhancement unit has stronger coupling strength, shorter delay time for initial stable operation in a coupling state and improved stability. The spin wave transferred in the resonance enhancing unit acts on the free magnetic layers of the spin Hall oscillators, so that the phase difference of the spin Hall oscillators is greatly reduced when the spin Hall oscillators stably work, and the furthest resonance distance is also greatly improved.
2. In the invention, since the connecting substance (resonance enhancing unit) between each spin hall oscillator belongs to an insulator, no current interference is generated between the spin hall oscillators, and each spin hall oscillator can independently read the electrical signals, thereby providing convenience for related theoretical research. Further, the coupling strength between the spin hall oscillators can be changed by selecting appropriate magnetic insulators at different resonance distances, thereby optimizing resonance effects, for example, improving and alleviating restrictions such as maximum and minimum coupling distances.
3. In the invention, the magnetic moment of the free magnetic layer is driven to precess by utilizing the spin Hall effect to generate an oscillation signal, so that the current density passing through the oscillator is effectively reduced, the possibility of damage of the device due to breakdown is avoided to a great extent, and the reliability of the device is effectively improved.
4. In the present invention, the spin-orbit coupling layer for generating spin hall effect and the magnetic insulator resonance enhancing unit can be arranged in a relatively inclined staggered manner, effectively utilizing space, and providing possibility for coexistence of strong association and individual manipulation of the oscillator.
The foregoing and other features and advantages of the invention will be apparent from the following description of exemplary embodiments, as illustrated in the accompanying drawings.
Drawings
Fig. 1 is a schematic diagram of the structure of two adjacent spin hall oscillators according to an embodiment of the present invention.
Fig. 2 is a cross-sectional view of a spin hall oscillator according to an embodiment of the present invention.
Fig. 3 is a top view of the structure shown in fig. 1.
Fig. 4 is a schematic view of the structure of fig. 1 in a mode of operation.
Fig. 5 is an overall schematic diagram of an array in which spin hall oscillators are connected by a resonance enhancing unit according to an embodiment of the present invention.
Fig. 6 is a top view of a spin hall oscillator array according to one embodiment of the present invention.
Fig. 7 is a top view of a spin hall oscillator array according to another embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood that the figures are not drawn to scale.
Fig. 1 is a schematic structural diagram of a basic coupling unit formed by coupling two adjacent spin hall oscillators together through a resonance enhancing unit according to an embodiment of the present invention. Fig. 2 is a cross-sectional view of the spin hall oscillator included in fig. 1, and fig. 3 is a top view of the structure shown in fig. 1.
Referring to fig. 1, an oscillator device according to an embodiment of the present application includes an array of spin hall oscillators formed on a substrate 101, wherein fig. 1 shows only two adjacent spin hall oscillators. Each spin hall oscillator includes a spin orbit coupling layer 105, a free magnetic layer 304 formed on the spin orbit coupling layer 105, an intermediate layer 303 formed on the free magnetic layer 304, a fixed magnetic layer (also referred to as a reference magnetic layer) 302 formed on the intermediate layer 303, and a top electrode 301 formed on the fixed magnetic layer 302. On the spin orbit coupling layer 105 on opposite sides of the free magnetic layer 304, two bottom electrodes 102 are also formed. It will be appreciated that although the bottom electrode 102 is shown in a lower position relative to the top electrode 301 in fig. 1, it may extend upwardly to be flush with the top surface of the top electrode 301. It should also be appreciated that while FIG. 1 shows a structure in which the fixed magnetic layer 302 is above the free magnetic layer 304, an inverted structure in which the free magnetic layer 304 is above the fixed magnetic layer 302 may be employed, with the electrode 301 below the fixed magnetic layer 302 and the spin-orbit coupling layer 105 above and in contact with the free magnetic layer 304. In the present application, spatially relative terms such as "upper", "above", "lower", "below", and the like are employed for convenience of description, but it is to be understood that such spatially relative terms are to be construed as encompassing corresponding spatial positional relationships when the relevant structure is viewed in various orientations.
Fig. 1 shows a spin hall oscillator of a generally rectangular shape, such as layers 301-304, but it is understood that the spin hall oscillator may have various shapes, examples of which include, but are not limited to, circular, elliptical, triangular, square, rectangular, regular pentagonal, regular hexagonal, circular or elliptical rings, and the like. The distance between adjacent spin hall oscillators may be between several tens to several hundred nanometers.
The substrate 101 may be a semiconductor substrate or an insulating substrate, examples of materials for the semiconductor substrate include, but are not limited to Si, ge, inSb, pbTe, inAs, inP, gaAs, inGaAs, gaSb, or other combinations of group III-V or group IV materials, etc. Examples of insulating substrate materials include, but are not limited to, siO 2, glass, quartz, sapphire, and the like. Although a few examples of substrate materials are described herein, it should be understood that the present invention is not limited thereto, and that any material on which a semiconductor device can be constructed may be used and remain within the spirit and scope of the present invention.
The spin-orbit coupling layer 105 may be embedded in the substrate 101 and extended a certain length so that the bottom electrodes 102 may be formed at both ends thereof, and the spin hall oscillator unit may be located on the spin-orbit coupling layer 105 between the two bottom electrodes 102, as shown in fig. 2. Fig. 3 is a top view of the structure shown in fig. 1. Referring to fig. 1 and 3, the extension direction of the spin orbit coupling layer 105 may be inclined with respect to the extension direction of the adjacent spin hall oscillator unit, and the included angle therebetween may be in the range of 30 degrees to 60 degrees, for example, preferably about 45 degrees. For example, a trench may be etched in the substrate 101, the spin-orbit coupling layer 105 may be deposited into the trench, and then the spin-orbit coupling layer 105 outside the trench may be removed by an etch-back process. Alternatively, the spin-orbit coupling layer 105 may be formed on the substrate 101, and after removing the excessive spin-orbit coupling layer by a mask etching process, a planarization layer is deposited between the spin-orbit coupling layers 105, and a planar upper surface is obtained by a polishing process, and the spin-orbit coupling layer 105 is exposed to the upper surface.
The spin-orbit coupling layer 105 may be formed of a material having a spin hall effect, that is, a material having a strong spin-orbit coupling, which may include a heavy metal, an antiferromagnetic material, a topological insulator material, or the like. Examples of heavy metal materials include, but are not limited to, one or more of Cr, Y, zr, nb, mo, tc, ru, rh, pd, hg, cd, in, sn, sb, hf, ta, β -Ta, W, β -W, re, os, ir, pt, au, hg, tl, pb, bi, po, and Sm; examples of antiferromagnetic materials include, but are not limited to, irMn, ptMn, etc., wherein the ratio content of each element may be any value between 0 and 1 (excluding 0 and 1); examples of topological insulator materials include, but are not limited to, one or more of CaTe、HgTe、CdTe、AlSb、InAs、GaSb、AlSB、BiSe、SnTe、Bi1-xSbx、Bi2Se3、Sb2Te3、Bi2Te3、(CrxV1-x)y(BizSb1-z)2-yTe3、Bi2Te2Se、(Bi,Sb)2Te3、Bi2-xSbxTe3-ySey、Sb2Te2Se、TlBiSe2、TlBiTe2、TlBi(S,Se)2、MnBi2Te4、V(Bi,Sb)2Te3、PbBi2Te4、GeBi2Te4、PbSb2Te4、PbBi4Te7、MnBi4Te7、MnBi6Te10、CrMnI3、MnSiTe3、PdCl3、PdBr3、PdI3、PtI3、PtBr3、NiBr3、VBr3、FeBr3、FeI3、RuI3、CoBr2、CrP2S6、SnTe、Pb1-xSnxTe、Bi2-xCrxSe3、BiTeCl、HgTe/CdTe、Ag2Te、SmB6、Bi14Rh3I9、LuBiPt、DyBiPt、GdBiPt and Nd 2(Ir1-xRhx)2O7.
The free magnetic layer 304 is formed in direct contact with the spin-orbit coupling layer 105, and the free magnetic layer 304 and the fixed magnetic layer 302 may be formed of ferromagnetic materials, examples of which include, but are not limited to, co, fe, ni, and alloys thereof with B, zr, pt, pd, hf, ta, V, zr, ti, cr, W, mo, nb, etc. The fixed magnetic layer 302 may have a fixed magnetic moment, although not shown, an antiferromagnetic pinning layer may be formed between the fixed magnetic layer 302 and the top electrode 301 to pin the magnetic moment of the fixed magnetic layer 302, examples of materials that may be used to form the antiferromagnetic pinning layer include, but are not limited to IrMn, rhMn, ruMn, osMn, feMn, feMnCr, feMnRh, crPtMn, tbMn, niMn, ptMn, ptPdMn, etc. In some embodiments, instead of an antiferromagnetic pinning structure, a self pinning scheme may be employed instead, such as where the fixed magnetic layer 302 is formed of a material having a higher coercivity and is formed to have a greater thickness than the free magnetic layer 304, or may be formed of an artificial antiferromagnetic (SAF) structure or a multi-layer stack structure, or the like. One of the free magnetic layer 304 and the fixed magnetic layer 302 may have an in-plane magnetic moment, the other may have a perpendicular magnetic moment perpendicular to the in-plane magnetic moment, or both may have perpendicular in-plane magnetic moments.
The intermediate layer 303 may be formed of a non-magnetically conductive material to constitute a Spin-Valve Oscillator (SVO), or may be formed of a non-magnetically insulating material to constitute a magnetic tunnel junction Oscillator (Magnetic Tunnel Junction Oscillators, MTJO). Examples of non-magnetic conductive materials include, but are not limited to, one or more metals of Ti, V, zn, cu, ag, au, nb, ta, cr, mo, W, re, ru, os, rh, ir, pt, hf, cd, zr, sc, or SiC, C, or ceramic materials, etc. may also be employed; examples of non-magnetic insulating materials include, but are not limited to, one or more of MgO、Al2O3、Al2MgO4、ZnO、ZnMgO2、TiO2、HfO2、TaO2、Cd2O3、ZrO2、Ga2O3、Sc2O3、V2O5、Fe2O3、Co2O3、NiO、CuO. It should be understood that various structures, materials, etc. of spin valves and magnetic tunnel junctions are known in the art, and the present invention is not limited to the embodiments described above, but encompasses various variations thereof.
The top electrode 301 and the bottom electrode 102 may be formed of a material having excellent electrical conductivity, examples of which may include a metal or alloy material selected from, but not limited to, one or more of Mg、Al、Ca、Sc、Ti、V、Mn、Cu、Zn、Ga、Ge、Sr、Y、Zr、Nb、Mo、Tc、Ru、Rh、Pd、Ag、Cr、Cd、In、Sn、Sb、Ba、Hf、Ta、W、Re、Os、Ir、Pt、Au、Tl、Pb、Bi、Po、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm and Yb, and may also be a carbon-based conductive material selected from, but not limited to, graphite, carbon nanotubes, bamboo charcoal, or the like.
With continued reference to FIG. 1, the free magnetic layers 304 of adjacent spin Hall oscillators may be interconnected by a resonance enhancing unit 104, and the resonance enhancing unit 104 may be formed of a magnetically insulating material. Adjacent free magnetic layers 304 may be magnetically coupled together using a resonance enhancing unit 104 formed of a magnetically insulating material. Specifically, when a spin-polarized current flows through the free magnetic layer 304 and generates a magnetic moment precession therein, it injects a spin flow into the resonance enhancing unit 104, which in turn can affect the magnetic moment precession of the adjacent free magnetic layer 304, thereby making both tend to settle at the resonance frequency, achieving a phase lock effect. Further, since the resonance enhancing unit 104 is formed of a magnetic insulating material, no current interference is generated between the spin hall oscillators, and the electrical signal of each spin hall oscillator can be read independently.
In some embodiments, the resonance enhancing unit 104 may be in direct contact with a portion of the upper surface of the spin-orbit coupling layer 105 formed in the substrate 101 thereunder, or the resonance enhancing unit 104 may be separated from the spin-orbit coupling layer 105 by a non-magnetic insulating layer (not shown) formed thereunder. The resonance enhancing unit 104 also preferably does not contact the fixed magnetic layer 302. In this way, the resonance enhancing unit 104 can be prevented from being affected by the spin flow from the fixed magnetic layer 302 and the spin-orbit coupling layer 105, so that the free magnetic layer 304 connected by the resonance enhancing unit 104 can reach a stable resonance frequency more quickly. Non-magnetic insulating materials may also be formed on both sides and over the resonance enhancing unit 104 to protect it and prevent it from contacting other magnetic layers.
In some embodiments, examples of the magnetic insulating material used to form the resonance enhancing unit 104 include, but are not limited to, one or more of oxides of metal materials such as Fe, co, ni, cu, zn, mn, ba, sr, mg, pb, Y and alloy oxides of rare earth elements such as Sm, nd and 3d transition metal elements such as Fe, co, ni, examples of these oxides and alloy oxides include Y3Fe5O12、Fe3O4、Co3O4、BiFeO3、BaFe12O19、SrFe12O19、PbFe12O19、MnO·ZnO·Fe2O3、NiO·ZnO·Fe2O3、BaO·Fe2O3, etc., although other magnetic insulating materials may be used. In some embodiments, examples of non-magnetic insulating materials formed around the resonance enhancing unit 104 include, but are not limited to, one or more of MgO、Al2O3、Al2MgO4、ZnO、ZnMgO2、TiO2、HfO2、TaO2、Cd2O3、ZrO2、Ga2O3、Sc2O3、V2O5、Fe2O3、Co2O3、NiO、SiO2、Si3N4、BN、AlN.
Fig. 4 is a schematic view of the structure of fig. 1 in a mode of operation. As shown in fig. 4, when an in-plane current flowing through the spin-orbit coupling layer 105 is applied between the two bottom electrodes 102, a spin flow is accumulated on the surface of the spin-orbit coupling layer 105 due to the spin hall effect (SPIN HALL EFFECT, SHE), and the spin flow diffuses into the free magnetic layer 304 in contact therewith, so that a magnetic moment of the free magnetic layer 304 precesses, thereby generating an oscillation signal. The density of the injected spin flow J S may be expressed as J S＝IS/A, where I S represents the magnitude of the spin flow and A is the area of the free magnetic layer 304 in contact therewith. The spin flow density J S, which is related to the density Jq of the charge flow through the spin-orbit coupling layer 105, can be represented by the formula J S＝Jq θ, where θ is the spin hall angle, which reflects the spin transfer efficiency of the spin-orbit coupling layer 105, e.g., for Pt or Ta layers, the θ value can typically range from 12% to 15%.
With continued reference to fig. 4 and 2, the spin hall oscillator begins to operate when a spin flow generated by the spin hall effect is injected into the free magnetic layer 304 of the spin hall oscillator. During operation of the spin hall oscillators, spin waves are also excited in the resonance enhancing units 104 formed of the magnetic insulator material connected to the free magnetic layer 304 due to the precession of the magnetization direction of the free magnetic layer, and the spin waves can transfer energy between the different spin hall oscillators. Because the total energy of the system is the lowest when resonance occurs between the oscillators, a plurality of spin Hall oscillators evolve over a period of time and finally work stably in a coupled state. This results in a significantly reduced phase difference for stable operation, an increased furthest resonant distance, and a significantly shorter delay time required for stable operation in the coupled state, as compared to a nanooscillator array without resonance enhancing unit connections.
Referring to fig. 4, a dotted arrow indicates the electron flow direction in the spin orbit coupling layer 105, and a hollow arrow indicates the spin wave injection direction. In addition, a perpendicular current flowing through the spin hall oscillator is also applied between the top electrode 301 and one of the bottom electrodes 102, which enters the free magnetic layer 304 after spin-polarizing through the fixed magnetic layer 302, the spin-polarizing current inducing a torque, i.e., STT torque, to the magnetic moment of the free magnetic layer 304 by the STT effect. At the same time, the spin flow injected from the spin-orbit coupling layer 105 also applies a torque, i.e., SOT torque, to the magnetic moment of the free magnetic layer 304. Under the combined action of these two torques and the magnetocrystalline anisotropy of the free magnetic layer 304 itself, the magnetization direction of the free magnetic layer 304 precesses. The resistance of the spin hall oscillator is proportional to the cosine of the angle of magnetization direction between the free magnetic layer and the fixed magnetic layer due to the giant magnetoresistance effect or the tunneling magnetoresistance effect. When the vertical current flowing into the spin hall oscillator is a direct current constant current, since the magnetization direction of the fixed magnetic layer is fixed, the voltage drop on the spin hall oscillator will change along with the precession of the magnetization direction of the free magnetic layer, thereby generating an oscillation signal. As described above, by providing the resonance enhancing unit 104, each spin hall oscillator can be made to resonate to the same frequency when operating, and the output power of the oscillator array can be increased.
The principle of the present invention is explained above by the spin wave coupling structure of the adjacent two spin hall oscillators. Fig. 5 shows an array of spin hall oscillators, in which the free magnetic layer of each spin hall oscillator is connected to the free magnetic layer of an adjacent spin hall oscillator by a resonance enhancing unit. Fig. 6 and 7 show an oscillator device including an array of spin hall oscillators in which a plurality of spin hall oscillators are arranged in a matrix in rows and columns, and a free magnetic layer of each spin hall oscillator is connected to a free magnetic layer of an adjacent spin hall oscillator through a resonance enhancing unit. In fig. 6, the spin-orbit coupling layer 105 extends at an oblique angle to the row and column directions of the array, for example, between 30 degrees and 60 degrees, preferably about 45 degrees. Two bottom electrodes 102 are formed on the spin orbit coupling layers 105 on both sides of each spin hall oscillator, so that each spin hall oscillator can be individually operated by the two bottom electrodes 102 and the top electrode 301. In fig. 7, the spin orbit coupling layer 105 may extend in a row or column direction of the array, and two bottom electrodes 102 are formed only at both ends of the spin orbit coupling layer 105, thereby simultaneously injecting spin waves to one row or one column of spin hall oscillators through the spin orbit coupling layer 105. In addition, each spin hall oscillator can also be operated individually by applying a vertical current through the spin hall oscillator using one of the bottom electrodes 102 and the top electrode 301 of the spin hall oscillator.
The oscillator device of the present invention comprising a spin hall oscillator array can be fabricated using existing semiconductor processes. For example, atomic layer deposition (Atomic Layer Deposition, ALD), magnetron sputter deposition (magnetron sputtering deposition), or Sub-atmospheric chemical vapor deposition (Sub-Atmospheric Chemical Vapor Deposition, SACVD) may be used to deposit the various layers, which are etched using photolithographic and etching techniques such as electron beam etching, reactive ion etching, etc., to obtain the desired pattern. Grinding, lift-off (lift-off) or the like processes may also be employed to remove undesired layers or portions. These semiconductor process steps are known in the art, and the process sequence and parameters thereof may be adjusted according to the structures described in the above embodiments, and will not be described herein.
Although the present invention has been described above with reference to exemplary embodiments, the scope of protection of the present invention is not limited to the embodiments described above. It will be apparent to persons skilled in the relevant art that various changes and modifications in form and detail can be made therein without departing from the scope and spirit of the invention. The scope of the invention is defined only by the following claims and their equivalents.
Claims (8)
1. An oscillator device comprising an array of spin hall oscillators, each spin hall oscillator comprising a spin orbit coupling layer, a free magnetic layer formed on the spin orbit coupling layer, an intermediate layer formed on the free magnetic layer, and a fixed magnetic layer formed on the intermediate layer, wherein the free magnetic layer of each spin hall oscillator is connected to the free magnetic layer of an adjacent spin hall oscillator by a resonance enhancing unit;
Each spin hall oscillator further includes a first electrode formed on the fixed magnetic layer, and second and third electrodes formed on the spin orbit coupling layer on opposite sides of the free magnetic layer, the second and third electrodes for applying an in-plane current flowing through the spin orbit coupling layer, one of the second and third electrodes and the first electrode for applying a vertical current flowing through the spin hall oscillator;
wherein the array of spin hall oscillators is arranged in a row and column direction, and the spin orbit coupling layer extends in the row direction, the column direction, or an oblique direction at an angle to the row and column directions.
2. The oscillator device according to claim 1, wherein a plurality of spin hall oscillators formed on the same spin orbit coupling layer share two electrodes formed on the same spin orbit coupling layer on both sides of the plurality of spin hall oscillators as the second electrode and the third electrode, or electrodes are formed on both sides of the plurality of spin hall oscillators and between adjacent spin hall oscillators among the plurality of spin hall oscillators as the second electrode and the third electrode of each spin hall oscillator.
3. The oscillator device according to claim 1, wherein the resonance enhancing unit is formed of a magnetic insulating material.
4. The oscillator device according to claim 1, wherein the resonance enhancing unit includes one or more of an oxide of a metal material such as Fe, co, ni, cu, zn, mn, ba, sr, mg, pb, Y and an alloy oxide of a rare earth element such as Sm, nd and a 3d transition metal element such as Fe, co, ni.
5. The oscillator device of claim 1, wherein the resonance enhancement unit is in direct contact with a portion of an upper surface of the spin-orbit coupling layer or is separated from the upper surface of the spin-orbit coupling layer by a non-magnetic insulating layer comprising one or more of MgO、Al2O3、Al2MgO4、ZnO、ZnMgO2、TiO2、HfO2、TaO2、Cd2O3、ZrO2、Ga2O3、Sc2O3、V2O5、Fe2O3、Co2O3、NiO、SiO2、Si3N4、BN、AlN.
6. The oscillator device of claim 1, wherein the spin-orbit coupling layer is formed of a material having a spin hall effect including a heavy metal material including one or more of Cr, Y, zr, nb, mo, tc, ru, rh, pd, hg, cd, in, sn, sb, hf, ta, β -Ta, W, β -W, re, os, ir, pt, au, hg, tl, pb, bi, po, and Sm, an antiferromagnetic material including one or more of IrMn and PtMn, or a topological insulator material including one or more of CaTe、HgTe、CdTe、AlSb、InAs、GaSb、AlSB、BiSe、SnTe、Bi1-xSbx、Bi2Se3、Sb2Te3、Bi2Te3、(CrxV1-x)y(BizSb1-z)2-yTe3、Bi2Te2Se、(Bi,Sb)2Te3、Bi2-xSbxTe3-ySey、Sb2Te2Se、TlBiSe2、TlBiTe2、TlBi(S,Se)2、MnBi2Te4、V(Bi,Sb)2Te3、PbBi2Te4、GeBi2Te4、PbSb2Te4、PbBi4Te7、MnBi4Te7、MnBi6Te10、CrMnI3、MnSiTe3、PdCl3、PdBr3、PdI3、PtI3、PtBr3、NiBr3、VBr3、FeBr3、FeI3、RuI3、CoBr2、CrP2S6、SnTe、Pb1-xSnxTe、Bi2-xCrxSe3、BiTeCl、HgTe/CdTe、Ag2Te、SmB6、Bi14Rh3I9、LuBiPt、DyBiPt、GdBiPt and Nd 2(Ir1-xRhx)2O7, wherein the proportioning content of each element is any value greater than 0 and less than 1.
7. The oscillator device of claim 1, wherein the intermediate layer is formed of a non-magnetically conductive material comprising one or more metals of Ti, V, zn, cu, ag, au, nb, ta, cr, mo, W, re, ru, os, rh, ir, pt, hf, cd, zr, sc, or comprising SiC, C, or a ceramic material, or a non-magnetically insulating material comprising one or more of MgO、Al2O3、Al2MgO4、ZnO、ZnMgO2、TiO2、HfO2、TaO2、Cd2O3、ZrO2、Ga2O3、Sc2O3、V2O5、Fe2O3、Co2O3、NiO、CuO.
8. The oscillator device of claim 1, wherein the free magnetic layer, the intermediate layer, and the fixed magnetic layer of the spin hall oscillator have a circular, elliptical, triangular, square, rectangular, regular pentagonal, regular hexagonal, circular or elliptical ring shape.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090071404A (en) * | 2007-12-26 | 2009-07-01 | 가부시키가이샤 히타치세이사쿠쇼 | Magnetic memory and write method of magnetic memory |
| CN106463610A (en) * | 2014-06-18 | 2017-02-22 | 英特尔公司 | Coupled spin hall nano oscillators with tunable strength |
| CN107658382A (en) * | 2017-08-28 | 2018-02-02 | 西安交通大学 | A kind of magnetic random memory based on logic gates |
| CN109637569A (en) * | 2018-11-23 | 2019-04-16 | 北京航空航天大学 | A kind of magnetic memory cell and its method for writing data |
| JPWO2020179493A1 (en) * | 2019-03-01 | 2020-09-10 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8604886B2 (en) * | 2010-12-20 | 2013-12-10 | Intel Corporation | Spin torque oscillator having multiple fixed ferromagnetic layers or multiple free ferromagnetic layers |
| US9966901B2 (en) * | 2015-11-19 | 2018-05-08 | Samsung Electronics Co., Ltd. | Spin-torque oscillator based on easy-cone anisotropy |
-
2021
- 2021-04-02 CN CN202110361570.3A patent/CN113098396B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090071404A (en) * | 2007-12-26 | 2009-07-01 | 가부시키가이샤 히타치세이사쿠쇼 | Magnetic memory and write method of magnetic memory |
| CN106463610A (en) * | 2014-06-18 | 2017-02-22 | 英特尔公司 | Coupled spin hall nano oscillators with tunable strength |
| CN107658382A (en) * | 2017-08-28 | 2018-02-02 | 西安交通大学 | A kind of magnetic random memory based on logic gates |
| CN109637569A (en) * | 2018-11-23 | 2019-04-16 | 北京航空航天大学 | A kind of magnetic memory cell and its method for writing data |
| JPWO2020179493A1 (en) * | 2019-03-01 | 2020-09-10 |
Non-Patent Citations (6)
| Title |
|---|
| Injection-Locked Spin Hall-Induced Coupled-Oscillators for Energy Efficient Associative Computing;Deliang Fan;《IEEE Transactions on Nanotechnology》;全文 * |
| Novel Cascadable Magnetic Majority Gates for Implementing Comprehensive Logic Functions;Xin Li;《IEEE Transactions on Electron Devices》;全文 * |
| 关联电子材料的自旋态限域调控与自旋电子器件应用研究进展;孙继荣;《中国基础科学》;全文 * |
| 具有倾斜极化层的自旋阀结构中磁翻转以及磁振荡模式的微磁模拟;吕刚;张红;侯志伟;;物理学报(17);全文 * |
| 双势垒磁性隧道结中电子的自旋极化输运;刘德;张红梅;翟利学;;科技导报(14);全文 * |
| 自旋转矩纳米振荡器的研究进展;钟智勇;王棋;金立川;唐晓莉;白飞明;张怀武;;真空电子技术(02);全文 * |
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