CN113097680A - Radial substrate integrated waveguide filtering power divider - Google Patents

Radial substrate integrated waveguide filtering power divider Download PDF

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CN113097680A
CN113097680A CN202110267546.3A CN202110267546A CN113097680A CN 113097680 A CN113097680 A CN 113097680A CN 202110267546 A CN202110267546 A CN 202110267546A CN 113097680 A CN113097680 A CN 113097680A
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holes
siw
power divider
center
cavity
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CN113097680B (en
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齐世山
陈守磊
吴文
陈幸
孙光超
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Nanjing University of Science and Technology
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/12Coupling devices having more than two ports
    • H01P5/16Conjugate devices, i.e. devices having at least one port decoupled from one other port

Abstract

The invention discloses a radial substrate integrated waveguide filtering power divider, which comprises an input port, an SIW circular cavity, a U-shaped invasion groove, a first SIW rectangular cavity, a second SIW rectangular cavity, a third SIW rectangular cavity and an output port, wherein the input port is connected with the SIW circular cavity; the input port is arranged at the center of the SIW circular cavity, the SIW circular cavity is divided into five parts along the radial direction, the five parts are respectively connected with one ends of five first SIW rectangular cavities to form a five-path power divider, the other end of each first SIW rectangular cavity is connected with a second SIW rectangular cavity, a third SIW rectangular cavity is arranged between the two second SIW rectangular cavities, the U-shaped groove is arranged on the upper side metal of the first SIW rectangular cavity, the U-shaped opening is directed along the counterclockwise direction, and the output port is arranged between the third SIW rectangular cavities. The radial substrate integrated waveguide filtering power divider has the advantages of compact structure, low loss, wide pass band, low manufacturing cost and convenient application.

Description

Radial substrate integrated waveguide filtering power divider
Technical Field
The invention belongs to the field of microwave and millimeter wave passive devices, and particularly relates to a radial substrate integrated waveguide filtering power divider.
Background
Power splitters are widely used in electronic communication systems, particularly in radar systems and antennas. In practical use, the power divider is used for dividing one path of signals into several paths of uniform or non-uniform signals, but the attenuation of the power divider in a non-working frequency band is not large enough, and signals with unnecessary frequencies cannot be rejected. Typically, a band pass filter is used to filter out unwanted frequencies of the signal. In this case, both the power divider and the filter occupy a large space. With the further development of high integration level and miniaturized system, the integration requirement of microwave devices is higher and higher, and it will be a future trend to integrate the power divider and the band-pass filter into a filtering power divider. More and more research has been carried out to achieve both functions in one device, and these structures have been demonstrated to have smaller dimensions and good performance.
In addition, the traditional waveguide power divider has the advantages of low loss, high Q value and large power capacity, but has large volume and is not easy to be connected with or integrated with other circuits; the microstrip power divider has the advantages of small volume, low cost and the like, but has small power capacity and large loss. In order to have both advantages, a substrate integrated waveguide Structure (SIW) has been proposed. The antenna is widely applied to devices such as antennas, filters, power dividers, resonators and the like due to the advantages of low cost, low loss, small volume, easy integration with other circuits and the like. In the multi-path power division application, the radial structure has obvious advantages because the radial structure has phase balance characteristics. Therefore, using SIW to achieve radial filter power division performance is a suitable choice.
Existing research cannot meet requirements of broadband miniaturized communication systems, and C.rave et al propose a radial SIW power divider with a multilayer substrate, wherein 45% of bandwidth is realized at a central frequency of 20GHz, but an integrated filtering function is not provided. In 2014, Song, K. provided a band-pass filter power divider with multiple probes and multi-path slots on the basis of a single-layer dielectric substrate, the insertion loss is very low, only about 0.3dB, and the band-pass filter power divider has good stop band bandwidth, but the phase difference between adjacent ports is 180 degrees, so that the band-pass filter power divider is not suitable for application environments needing the same phase.
Disclosure of Invention
The invention aims to provide a radial substrate integrated waveguide filter power divider.
The technical solution for realizing the purpose of the invention is as follows: a radial substrate integrated waveguide filtering power divider comprises an input port, an SIW circular cavity, five U-shaped grooves, five first SIW rectangular cavities, five second SIW rectangular cavities, five third SIW rectangular cavities and five output ports;
the input port is arranged in the center of the SIW circular cavity, the SIW circular cavity is divided into five parts along the radial direction, the five parts are respectively connected with one end of five identical first SIW rectangular cavities to form a five-way power divider, the other ends of the five first SIW rectangular cavities are respectively connected with five second SIW rectangular cavities in a one-to-one correspondence mode, the third SIW rectangular cavity is located between the two identical second SIW rectangular cavities, the five U-shaped grooves are arranged on the five first SIW rectangular cavities in a one-to-one correspondence mode, and the output ports (7) are respectively located between the third SIW rectangular cavities (6).
Preferably, the SIW round cavity radius r1Determined by the following equation:
Figure BDA0002972838760000021
Figure BDA0002972838760000022
where c is the speed of light, h is the thickness of the dielectric plate, εrIs the relative dielectric constant, P, of the dielectric substrate01Is 2.405.
Preferably, the U-shaped slot comprises a first slit, a second slit and a third slit; the first gap and the third gap are respectively and vertically connected with two ends of the second gap to form a U shape; the five U-shaped grooves are arranged along the circumferential direction, and the openings are arranged along the anticlockwise direction;
the length u of the innermost side of the first gap from the center of the SIW round cavity is 7 mm.
Preferably, the second gap length/13.2mm, 0.6mm wide; the width w of the first slit and the third slit is 0.6mm, and the length l3By the formula
Figure BDA0002972838760000023
Is determined, where c is the speed of light, εrIs the relative dielectric constant of the dielectric substrate, fzeroZero frequency for excitation。
Preferably, the five first SIW rectangular cavities are formed by dividing five rows of first through holes which are arranged at equal intervals along the radial direction, one end of each row of first through holes is connected with the outer side of the SIW circular cavity, the other end of each row of first through holes points to a third SIW rectangular cavity along the radial direction, the other end of each row of first through holes is connected with a second through hole, the direction of the second through holes is perpendicular to that of one row of first through holes, each first SIW rectangular cavity is provided with a row of third through holes along the circumferential direction, the third through holes are used for separating the first SIW rectangular cavity from the second SIW rectangular cavity, and each first SIW rectangular cavity is defined by two rows of first through holes and one row of third through holes.
Preferably, each column of first through holes comprises six through holes, and the diameter b of the middle four through holes21.2mm, diameter b of through hole at both ends41mm, through hole center spacing s41.6mm, the second through hole comprises two diameters b41mm through hole, center-to-center distance l22.6mm, each row of third through holes comprises five diameters b30.8mm through hole center-to-center spacing s2=1.1mm。
Preferably, adjacent second SIW rectangular cavities and third SIW rectangular cavities are separated by a column of fourth through holes arranged along the radial direction.
Preferably, one second SIW rectangular cavity is defined by two rows of fourth through holes, one row of third through holes and one row of fifth through holes, and the fifth through holes are arranged along the circumferential direction and connected with one end of the fourth through hole, which is deviated from the circle center;
and the third SIW rectangular cavity is formed by two rows of fourth through holes, a second through hole and a row of sixth through holes in a surrounding mode, the sixth through holes are arranged along the circumferential direction and are connected with one ends, deviating from the circle center, of the fourth through holes, and the distance from the sixth through holes to the circle center is smaller than the distance from the fifth through holes to the circle center.
Preferably, each column of fourth through holes comprises four diameters b10.6mm through hole center-to-center spacing s10.8 mm; each row of fifth through holes comprises eleven diameters b51.2mm through holes with a center-to-center spacing s31.6; each row of sixth through holes comprises thirteen diameters b51.2mm through holes with a center-to-center spacing s3=1.6mm。
Preferably, the input port and the output port are 50 ohm standard coaxial wires with an inner diameter a10.6mm, outer diameter a2=2mm。
Compared with the prior art, the invention has the following remarkable advantages:
1. by using the SIW structure, the size is effectively reduced, and the power capacity is improved;
2. the filter function and the power division function are integrated, and the method is suitable for a miniaturized system with a high integration level;
3. the single-layer dielectric substrate is simple to process and is beneficial to further reducing the cost.
4. The stop band bandwidth is widened by adding the U-shaped groove, and the method is suitable for wider application environments.
5. The broadband high-precision optical fiber has broadband performance, good amplitude and phase consistency and very low insertion loss, and is suitable for high-precision systems.
The invention is described in further detail below with reference to the figures and preferred embodiments.
Drawings
Fig. 1 is a schematic bottom layer diagram of a radial substrate integrated waveguide filter power divider according to the present invention.
Fig. 2 is a top-level schematic diagram of a radial substrate integrated waveguide filter power divider according to the present invention.
Fig. 3 is a schematic diagram showing the dimensions of the U-shaped slot in fig. 2.
Fig. 4 is a schematic diagram of the bottom dimension of a radial substrate integrated waveguide filter power divider according to the present invention.
Fig. 5 is a schematic diagram of the top layer size of a radial substrate integrated waveguide filter power divider according to the present invention.
Fig. 6 is a simulation result diagram of insertion loss and return loss of a radial substrate integrated waveguide filter power divider according to the present invention.
Fig. 7 is a diagram showing the simulation result of amplitude consistency of the radial substrate integrated waveguide filter power divider according to the present invention.
Fig. 8 is a simulation result diagram of phase consistency of the radial substrate integrated waveguide filter power divider according to the present invention.
Detailed Description
As shown in fig. 1-2, a radial substrate integrated waveguide filter power divider includes an input port (1), a SIW circular cavity (2), five U-shaped grooves (3), five first SIW rectangular cavities (4), five second SIW rectangular cavities (5), five third SIW rectangular cavities (6), and five output ports (7);
the input port (1) is arranged at the center of the SIW circular cavity (2), the SIW circular cavity (2) is divided into five parts along the radial direction, the five parts are respectively connected with one end of five identical first SIW rectangular cavities (4) to form a five-way power divider, the other ends of the five first SIW rectangular cavities (4) are respectively connected and connected with five second SIW rectangular cavities (5) in a one-to-one correspondence manner, a third SIW rectangular cavity (6) is arranged in the middle of the two identical second SIW rectangular cavities (5), five U-shaped grooves (3) are arranged on the five first SIW rectangular cavities (4) in a one-to-one correspondence manner, and the output port (7) is respectively arranged in the middle of the third SIW rectangular cavity (6).
In a further embodiment, the radius r of the SIW round cavity (2)1Determined by the following equation:
Figure BDA0002972838760000041
Figure BDA0002972838760000042
where c is the speed of light, h is the thickness of the dielectric plate, εrIs the relative dielectric constant, P, of the dielectric substrate01Is 2.405. In the present embodiment, r1≈8mm。
As shown in fig. 3, in a further embodiment, the U-shaped slot (3) comprises a first slit (31), a second slit (32) and a third slit (33); the first gap (31) and the third gap (33) are respectively and vertically connected with two ends of the second gap (32) to form a U shape; the five U-shaped grooves are arranged along the circumferential direction, and the openings are arranged along the anticlockwise direction;
in some embodiments, the length u of the innermost side of the first slit (31) from the center of the SIW round cavity (2) is 7 mm. The second gap (32) is long13.2mm, 0.6mm wide; of the first slit (31) and the third slit (33)Width w is 0.6mm and length l3By the formula
Figure BDA0002972838760000043
Is determined, where c is the speed of light, εrIs the relative dielectric constant of the dielectric substrate, fzeroIs the zero frequency of the excitation.
In some embodiments, when fzeroWhen the frequency is 11.7GHz, the calculation is carried out by the formula:
Figure BDA0002972838760000044
calculated from this,. in this example,. l34.3 mm; for specific application requirements, the l can be changed3To adjust the frequency of the zero.
In a further embodiment, five first SIW rectangular cavities (4) are formed by dividing five rows of first through holes (41) which are arranged at equal intervals in the radial direction, one end of each row of first through holes (41) is connected with the outer side of the SIW circular cavity (2), the other end of each row of first through holes (41) points to a third SIW rectangular cavity (6) in the radial direction, the other end of each row of first through holes (41) is connected with a second through hole (42), the direction of the second through holes (42) is perpendicular to that of the first through holes (41) in one row, each first SIW rectangular cavity (4) is provided with a row of third through holes (43) in the circumferential direction, the third through holes (43) are used for separating the first SIW rectangular cavity (4) from the second SIW rectangular cavity (5), and each first SIW rectangular cavity (4) is formed by the two rows of first through holes (41) and the row of third through holes (43).
In a further embodiment, each row of first through holes (41) comprises six through holes, the middle four through holes having a diameter b21.2mm, diameter b of through hole at both ends41mm, through hole center spacing s41.6mm, the second through hole (42) comprises two diameters b41mm through hole, center-to-center distance l22.6mm, each row of third through holes (43) comprises five diameters b30.8mm through hole center-to-center spacing s2=1.1mm。
In a further embodiment, the adjacent second SIW rectangular cavities (5) and third SIW rectangular cavities (6) are separated by a column of fourth through holes (61) arranged along the radial direction.
In a further embodiment, a second SIW rectangular cavity (5) is defined by two rows of fourth through holes (61), one row of third through holes (43) and one row of fifth through holes (62), wherein the fifth through holes (62) are arranged along the circumferential direction and are connected with one end, deviating from the circle center, of the fourth through holes (61);
a third SIW rectangular cavity (6) is formed by two rows of fourth through holes (61), a second through hole (42) and a row of sixth through holes (51) in a surrounding mode, the sixth through holes (51) are arranged along the circumferential direction and are connected with one ends, deviating from the circle center, of the fourth through holes (61), and the distance from the sixth through holes (51) to the circle center is smaller than the distance from the fifth through holes (62) to the circle center.
In a further embodiment, each column of fourth through holes comprises four diameters b10.6mm through hole center-to-center spacing s10.8 mm; each row of fifth through holes (62) comprises eleven diameters b51.2mm through holes with a center-to-center spacing s31.6; each row of sixth through holes (51) comprises thirteen diameters b51.2mm through holes with a center-to-center spacing s3=1.6mm。
In a further embodiment, as shown in FIGS. 4-5, the input port 1 is a standard coaxial line of 50 Ω with an inner diameter a10.6mm, outer diameter a2=2mm;
For the SIW round chamber 2r in this embodiment0(r0Is the diameter a of the outer conductor2Half of) the impedance, can be calculated using the formula:
Figure BDA0002972838760000051
in certain embodiments, the dielectric plate material used is Druid/RT5880 (. epsilon.) (r2.2, tan delta 0.0009), thickness h of the dielectric plate is 1.575mm, and the formula is substituted to calculate Z0Is approximately 63 omega, so that the connection with the 50 ohm coaxial line can be directly carried out.
In a further embodiment, the output port 7 is five-way, has the same size and structure as the input port, has an inner conductor diameter a1 of 0.6mm and an outer diameter a2 of 2mm, and is coaxially connected by a 50 Ω standard.
The preferred embodiment is designed on a 1.575mm thick Druid/RT5880 dielectric substrate with 1 ounce copper above and below the substrate.
The working principle of the invention is as follows: an excitation signal is fed in an input port 1 through a coaxial line of 50 omega standard, the excitation signal is radially conducted through a SIW circular cavity 2, the signal is divided into five parts by a first SIW rectangular cavity 4, the function of a one-to-five power divider is realized, a signal in a pass band is coupled into a third SIW rectangular cavity 6 through the first SIW rectangular cavity 4 and is output through an output port 7, a low-frequency stop band signal is restrained from being transmitted, a high-frequency stop band signal is coupled into a second SIW rectangular cavity 5 through the first SIW rectangular cavity 4 and cannot be output through the output port 7, and the filtering function is realized; furthermore, a U-shaped groove 3 is etched in the metal on the upper side of the first SIW rectangular cavity 4, transmission zero is excited, and a high-frequency stop band is widened.
The invention integrates the functions of filtering and power division, and realizes the aim of designing a filtering power divider with high phase and amplitude consistency on the SIW.
In some embodiments, the overall circuit size is 1.9 λ0×1.9λ0
Fig. 6 is a simulation result diagram of insertion loss and return loss of a radial substrate integrated waveguide filter power divider according to the present invention. It can be seen that the insertion loss of the filter power divider at 9.3GHz is at least 0.3dB (excluding the power division loss of 7 dB), the return loss is higher than 23dB, the pass band is from 8.21GHz to 10.57GHz, the relative bandwidth is 25.1%, and the stop band attenuation from 11.4GHz to 13.79GHz is better than 20 dB.
Fig. 7 to 8 are simulation result diagrams of amplitude and phase consistency of the radial substrate integrated waveguide filter power divider according to the present invention. It can be seen that the phase imbalance between the ports is less than 0.2 deg., and the amplitude imbalance is less than 0.05 dB.
In summary, the radial substrate integrated waveguide filtering power divider integrates the functions of filtering and power dividing, and has the advantages of wide band, high selectivity, wide band suppression, low loss and the like. The method is suitable for modern high-integration miniaturized communication systems and has excellent performance.

Claims (10)

1. A radial substrate integrated waveguide filtering power divider is characterized by comprising an input port (1), an SIW circular cavity (2), five U-shaped grooves (3), five first SIW rectangular cavities (4), five second SIW rectangular cavities (5), five third SIW rectangular cavities (6) and five output ports (7);
the input port (1) is arranged at the center of the SIW circular cavity (2), the SIW circular cavity (2) is divided into five parts along the radial direction, the five parts are respectively connected with one end of five identical first SIW rectangular cavities (4) to form a five-way power divider, the other ends of the five first SIW rectangular cavities (4) are respectively connected and connected with five second SIW rectangular cavities (5) in a one-to-one correspondence manner, a third SIW rectangular cavity (6) is arranged in the middle of the two identical second SIW rectangular cavities (5), five U-shaped grooves (3) are arranged on the five first SIW rectangular cavities (4) in a one-to-one correspondence manner, and the output port (7) is respectively arranged in the middle of the third SIW rectangular cavity (6).
2. The radial substrate integrated waveguide filter power divider according to claim 1, characterized in that the SIW circular cavity (2) has a radius r1Determined by the following equation:
Figure FDA0002972838750000011
Figure FDA0002972838750000012
where c is the speed of light, h is the thickness of the dielectric plate, εrIs the relative dielectric constant, P, of the dielectric substrate01Is 2.405.
3. The radial substrate integrated waveguide filter power divider according to claim 1, characterized in that the U-shaped slot (3) comprises a first slot (31), a second slot (32) and a third slot (33); the first gap (31) and the third gap (33) are respectively and vertically connected with two ends of the second gap (32) to form a U shape; the five U-shaped grooves are arranged along the circumferential direction, and the openings are arranged along the anticlockwise direction;
the length u of the innermost side of the first gap (31) from the center of the SIW round cavity (2) is 7 mm.
4. The radial substrate integrated waveguide filter power divider of claim 3,
the second gap (32) is long13.2mm, 0.6mm wide; the first slit (31) and the third slit (33) have a width (w) of 0.6mm and a length (l)3By the formula
Figure FDA0002972838750000013
Is determined, where c is the speed of light, εrIs the relative dielectric constant of the dielectric substrate, fzeroIs the zero frequency of the excitation.
5. The radial substrate integrated waveguide filter power divider according to claim 1, wherein five first SIW rectangular cavities (4) are divided by five rows of first through holes (41) arranged at equal intervals in the radial direction, one end of each row of first through holes (41) is connected with the outer side of the SIW circular cavity (2), the other end of each row of first through holes (41) is directed to a third SIW rectangular cavity (6) in the radial direction, the other end of each row of first through holes (41) is connected with a second through hole (42), the direction of the second through holes (42) is perpendicular to the row of first through holes (41), each first SIW rectangular cavity (4) is provided with a row of third through holes (43) in the circumferential direction, the third through holes (43) are used for separating the first SIW rectangular cavity (4) from the second SIW rectangular cavity (5), and each first SIW rectangular cavity (4) is surrounded by two rows of first through holes (41) and a row of third through holes (43).
6. The radial substrate integrated waveguide filter power divider according to claim 5, wherein each column of first through holes (41) comprises six through holes, and the diameter b of the middle four through holes21.2mm, diameter b of through hole at both ends41mm, through hole center spacing s41.6mm, the second through hole (42) comprises two diameters b41mm through hole, center-to-center distance l22.6mm, each row of third through holes (43) comprises five diameters b30.8mm through hole center-to-center spacing s2=1.1mm。
7. The radial substrate integrated waveguide filter power divider according to claim 1, wherein adjacent second SIW rectangular cavities (5) and third SIW rectangular cavities (6) are separated by a column of fourth through holes (61) arranged along the radial direction.
8. The radial substrate integrated waveguide filter power divider according to claim 7, wherein a second SIW rectangular cavity (5) is defined by two rows of fourth through holes (61), one row of third through holes (43) and one row of fifth through holes (62), wherein the fifth through holes (62) are arranged along the circumferential direction and connected with one end of the fourth through hole (61) departing from the center of circle;
a third SIW rectangular cavity (6) is formed by two rows of fourth through holes (61), a second through hole (42) and a row of sixth through holes (51) in a surrounding mode, the sixth through holes (51) are arranged along the circumferential direction and are connected with one ends, deviating from the circle center, of the fourth through holes (61), and the distance from the sixth through holes (51) to the circle center is smaller than the distance from the fifth through holes (62) to the circle center.
9. The radial substrate integrated waveguide filter power divider of claim 8, wherein each column of fourth through holes comprises four diameters b10.6mm through hole center-to-center spacing s10.8 mm; each row of fifth through holes (62) comprises eleven diameters b51.2mm through holes with a center-to-center spacing s31.6; each row of sixth through holes (51) comprises thirteen diameters b51.2mm through holes with a center-to-center spacing s3=1.6mm。
10. The radial substrate integrated waveguide filter power divider according to claim 1, wherein the input port (1) and the output port (7) are 50 ohm standard coaxial lines with an inner diameter a10.6mm, outer diameter a2=2mm。
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王玉洁: "基于基片集成波导的双通带滤波功分器设计", 《微波学报》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115458892A (en) * 2022-10-10 2022-12-09 南京邮电大学 Four-way in-phase unequal power divider based on circular SIW resonant cavity
CN115458892B (en) * 2022-10-10 2023-12-12 南京邮电大学 Four-way in-phase unequal power divider based on circular SIW resonant cavity

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