CN113097332B - 可穿戴红外成像设备 - Google Patents

可穿戴红外成像设备 Download PDF

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CN113097332B
CN113097332B CN202110209625.9A CN202110209625A CN113097332B CN 113097332 B CN113097332 B CN 113097332B CN 202110209625 A CN202110209625 A CN 202110209625A CN 113097332 B CN113097332 B CN 113097332B
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CN113097332A (zh
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吴英
黄绍春
翟渊
申均
冷重钱
李金�
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Ningbo Qipu Core Microsystem Technology Co ltd
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Chongqing University of Science and Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots

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Abstract

本发明公开一种可穿戴红外成像设备，包括眼镜和量子点LED，该量子点LED贴合在所述眼镜的镜片外壁面上，且阳极与阴极之间依次设置有载流子阻挡层、空穴传输层、量子点发光层、电子传输层和石墨烯红外吸收层。采用本发明的可穿戴红外成像设备，集成多层石墨烯探测器结构和量子点LED，无需复杂的红外相机读出电路，可以直接将中远红外、中红外、近红外辐射转换为可见光图像，超低功耗，无需制冷，厚度薄、结构透明，可直接与眼镜片等曲面玻璃贴合方便佩戴。

Description

可穿戴红外成像设备
技术领域
本发明涉及可穿戴设备技术领域，特别是涉及一种可穿戴红外成像设备。
背景技术
红外探测成像及其相关技术，在最近二十年取得了飞速的发展，已广泛应用于电力、医疗、消防、公安、冶金、化工、国防建设等多个军民领域。红外技术的核心问题如何是将具有远红外、中红外，或近红外辐射特征的目标景象，转变成为人眼可视的可见光图像。
目前，红外探测器主要分为两类，第一类是利用光热效应，即将入射光子的能量直接转化为热量，从而引起材料电阻率的改变。这类探测器能够在常温下工作，但是灵敏度很低，无法满足实际需求。
第二类是基于光电效应，这类探测器直接将光子转化成电流，因此具有很高的灵敏度。虽然光子探测器灵敏度高，响应速度快，但光子探测机制决定了其一般需在低温下工作，以抑制在室温下因探测器材料产生热激发而引起过大的暗电流和噪声，且响应的频谱范围有限，难以应用到可穿戴设备中。
发明内容
为解决以上技术问题，本发明提供一种可穿戴红外成像设备，极大设备的外部电路，缩小探测器的体积，以便应用到可穿戴设备上。
技术方案如下：
提供了一种可穿戴红外成像设备，包括眼镜，在第一种可实现方式中，还包括量子点LED，该量子点LED贴合在所述眼镜的镜片外壁面上，且阳极与阴极之间依次设置有空穴传输层、量子点发光层、电子传输层和石墨烯红外吸收层。
结合第一种可实现方式，在第二种可实现方式中，还包括电源，该电源设置于所述眼镜的镜架上，且正极、负极分别与所述阳极、阴极电连接。
结合第一种可实现方式，在第三种可实现方式中，所述量子点LED的阳极和阴极均为石墨烯电极层。
结合第一种可实现方式，在第四种可实现方式中，所述量子点LED的阳极为石墨烯电极层，阴极为铝电极层。
结合第一种可实现方式，在第五种可实现方式中，所述石墨烯红外吸收层包括多层石墨烯层，每层石墨烯层之间设置有势垒层。
结合第五种可实现方式，在第六种可实现方式中，所述势垒层材料为二硫化钼。
结合第一种可实现方式，在第七种可实现方式中，所述电子传输层为氧化锌层。
结合第一种可实现方式，在第八种可实现方式中，所述量子点LED的阳极与空穴传输层之间设置有载流子阻挡层。
结合第八种可实现方式，在第九种可实现方式中，所述载流子阻挡层的材料为三氧化钼。
有益效果：采用本发明的可穿戴红外成像设备，集成多层石墨烯探测器结构和量子点LED，无需复杂的红外相机读出电路，可以直接将中远红外、中红外、近红外辐射转换为可见光图像，超低功耗，无需制冷，厚度薄、结构透明，可直接与眼镜片等曲面玻璃贴合方便佩戴。
附图说明
图1为本发明的结构示意图；
图2为图1中量子点LED2的结构示意图。
具体实施方式
下面结合实施例和附图对本发明作进一步说明。
实施例一、如图1、图2所示，该可穿戴红外成像设备包括眼镜1和量子点LED2，该量子点LED2贴合在所述眼镜1的镜片3外壁面上，且阳极4与阴极5之间依次设置有空穴传输层6、量子点发光层7、电子传输层8和石墨烯红外吸收层9。
具体而言，眼镜1与现有的眼镜1结构相同，设置有镜片3和镜架12。量子点LED2设置有透明的衬底10，衬底10贴合在镜片3的外壁面上，衬底10的外壁面上覆盖有阳极4，阳极4上依次生长有空穴传输层6、量子点发光层7、电子传输层8和石墨烯红外吸收层9，石墨烯红外吸收层9表面覆盖有阴极5，形成pn型结构器件。
由于石墨烯红外吸收层9是无带隙的层间跃迁，因此不需要额外的辐射耦合结构就可以持续吸收远红外、中红外、近红外辐射，从而连续产生大量能级高于石墨烯势垒的电子。产生的电子的能级高于石墨烯势垒，被石墨烯捕获的几率低，具有极大的光电流增益，转换效率高。
石墨烯红外吸收层9产生的电子在辅助电场的作用下，可以沿电子传输层8进入量子点发光层7，在电致发光效应的作用下，量子点发光层7产生可见光子。量子点发光层7产生的光子有小部分会进入石墨烯红外吸收层9中，被石墨烯二次吸收，激发石墨烯产生额外的电子，同时伴随着石墨烯中光生空穴的迅速局域化，具有光学正反馈特性，提高转换效率。另一部分从衬底10射出探测器，形成可见光图像，透过镜片3就可以看见形成的图像。
在本实施例中，优选的，还包括电源11，该电源11设置于所述眼镜1的镜架12上，且正极、负极分别与所述阳极4、阴极5电连接。因为无需复杂的红外相机读出电路，所以在本实施例中，可以直接将电池集成到镜架12上以方便佩戴，电源11可以是纽扣电池，电池的正极通过一导线连接量子点LED2的阳极4，负极通过另一导线连接量子点LED2的阴极5，通过电池可以为量子点LED2提供辅助电场。
在本实施例中，优选的，所述量子点LED2的阳极4和阴极5均为单层的石墨烯电极层。石墨烯单原子层结构具有极好的平坦性、柔性性，可以减小器件表面的粗糙度，以及避免局部强电场导致电流集中，易于集成在其他器件，如眼镜1上。同时石墨烯具有良好的热稳定性，对热不敏感，无需进行制冷，而且具有良好的化学稳定性，可以通过合理掺杂获得所需的稳定的功函数。
在本实施例中，优选的，所述石墨烯红外吸收层9包括多层石墨烯层13，相邻石墨烯层13之间设置有势垒层14。
在本实施例中，优选的，所述势垒层14材料为二硫化钼。
在本实施例中，优选的，所述电子传输层8为氧化锌层。
在本实施例中，优选的，所述量子点LED2的空穴传输层6包括上层传输层4a和下层传输层4b，下层传输层4b和上层传输层4a依次设置在载流子阻挡层3和量子点发光层5之间，所述下层传输层4b和上层传输层4a可以是由同种聚噻吩类、三芳胺类为代表的芳香多胺化合物制成，如PEDOT-PSS材料、NPB材料。也可以上层传输层4a为PEDOT-PSS材料，下层传输层4b为NPB材料，如此，下层传输层4b可以同时作为空穴传输层和空穴注入层。
在本实施例中，优选的，所述量子点LED2的阳极4与空穴传输层6之间设置有载流子阻挡层15。
在本实施例中，优选的，所述载流子阻挡层15的材料为三氧化钼。
实施例二、实施二与实施例一大致相同，其主要区别在于：所述量子点LED2的阳极4为石墨烯电极层，阴极5为铝电极层。
最后需要说明的是，上述描述仅仅为本发明的优选实施例，本领域的普通技术人员在本发明的启示下，在不违背本发明宗旨及权利要求的前提下，可以做出多种类似的表示，这样的变换均落入本发明的保护范围之内。

Claims (8)

1.一种可穿戴红外成像设备，包括眼镜，其特征在于：还包括量子点LED，该量子点LED贴合在所述眼镜的镜片外壁面上，且阳极与阴极之间依次设置有空穴传输层、量子点发光层、电子传输层和石墨烯红外吸收层，所述石墨烯红外吸收层包括多层石墨烯层，每层石墨烯层之间设置有势垒层。
2.根据权利要求1所述的可穿戴红外成像设备，其特征在于：还包括电源，该电源设置于所述眼镜的镜架上，且正极、负极分别与所述阳极、阴极电连接。
3.根据权利要求1所述的可穿戴红外成像设备，其特征在于：所述量子点LED的阳极和阴极均为石墨烯电极层。
4.根据权利要求1所述的可穿戴红外成像设备，其特征在于：所述量子点LED的阳极为石墨烯电极层，阴极为铝电极层。
5.根据权利要求1所述的可穿戴红外成像设备，其特征在于：所述势垒层材料为二硫化钼。
6.根据权利要求1所述的可穿戴红外成像设备，其特征在于：所述电子传输层为氧化锌层。
7.根据权利要求1所述的可穿戴红外成像设备，其特征在于：所述量子点LED的阳极与空穴传输层之间设置有载流子阻挡层。
8.根据权利要求7所述的可穿戴红外成像设备，其特征在于：所述载流子阻挡层的材料为三氧化钼。
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102910621A (zh) * 2012-10-23 2013-02-06 上海乘鹰新材料有限公司 多层石墨烯及其修饰电极的制备方法、用途
CN105977336A (zh) * 2016-05-30 2016-09-28 北京理工大学 一种量子点红外探测与显示器件及其制备方法
US9500904B2 (en) * 2013-06-28 2016-11-22 Boe Technology Group Co., Ltd. Light valve device, infrared display apparatus, dedicated spectacles and system
JP2016208116A (ja) * 2015-04-16 2016-12-08 株式会社半導体エネルギー研究所 撮像装置および電子機器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101558801B1 (ko) * 2014-08-21 2015-10-12 경희대학교 산학협력단 그래핀-실리콘 양자점 하이브리드 구조를 이용한 포토 다이오드 및 그 제조방법
US11145692B2 (en) * 2017-12-12 2021-10-12 Universal Display Corporation Hybrid wearable organic light emitting diode (OLED) illumination devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102910621A (zh) * 2012-10-23 2013-02-06 上海乘鹰新材料有限公司 多层石墨烯及其修饰电极的制备方法、用途
US9500904B2 (en) * 2013-06-28 2016-11-22 Boe Technology Group Co., Ltd. Light valve device, infrared display apparatus, dedicated spectacles and system
JP2016208116A (ja) * 2015-04-16 2016-12-08 株式会社半導体エネルギー研究所 撮像装置および電子機器
CN105977336A (zh) * 2016-05-30 2016-09-28 北京理工大学 一种量子点红外探测与显示器件及其制备方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
High-performance graphene-quantum-dot photodetectors;Chang Oh Kim等;《Scientific Reports》;20140707;第7卷(第4期);全文 *
红外量子点及其光电探测器研究进展;李汝劼 等;《红外技术》;20200520;第42卷(第5期);全文 *

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