CN113097100A - Cleaning method and cleaning equipment - Google Patents
Cleaning method and cleaning equipment Download PDFInfo
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- CN113097100A CN113097100A CN202110250495.3A CN202110250495A CN113097100A CN 113097100 A CN113097100 A CN 113097100A CN 202110250495 A CN202110250495 A CN 202110250495A CN 113097100 A CN113097100 A CN 113097100A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 125
- 238000000034 method Methods 0.000 title claims abstract description 43
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000001301 oxygen Substances 0.000 claims abstract description 55
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 55
- 239000002184 metal Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910001868 water Inorganic materials 0.000 claims abstract description 21
- 239000007789 gas Substances 0.000 claims description 57
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 27
- 229910052802 copper Inorganic materials 0.000 claims description 27
- 239000010949 copper Substances 0.000 claims description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 238000001514 detection method Methods 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 57
- 238000005530 etching Methods 0.000 description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 239000008367 deionised water Substances 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 7
- 238000010926 purge Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 1
- PTVDYARBVCBHSL-UHFFFAOYSA-N copper;hydrate Chemical compound O.[Cu] PTVDYARBVCBHSL-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The embodiment of the invention discloses a cleaning method, which is used for cleaning a wafer to be cleaned, wherein the surface of the wafer to be cleaned is provided with a naked metal part, and the cleaning method is characterized by comprising the following steps: processing a chamber of a cleaning device to enable the oxygen concentration in the chamber to be lower than a preset value; putting the wafer to be cleaned into the chamber; and introducing a cleaning solution containing water into the chamber to clean the wafer to be cleaned.
Description
Technical Field
The invention relates to the field of semiconductor cleaning, in particular to a cleaning method and cleaning equipment.
Background
Wet cleaning of wafers having exposed metal surfaces is often involved during the manufacturing process of semiconductor devices. The metal surface is typically exposed by etching, after which the wafer is cleaned with an aqueous cleaning solution in order to remove residues and contaminants adhering to the wafer.
However, after the above cleaning step, the exposed metal portions of the wafer surface are susceptible to defects.
Disclosure of Invention
In view of the above, embodiments of the present invention provide a cleaning method and a cleaning apparatus to solve the problems in the background art.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
the embodiment of the invention provides a cleaning method, which is used for cleaning a wafer to be cleaned, wherein the surface of the wafer to be cleaned is provided with a naked metal part, and the method comprises the following steps:
processing a chamber of a cleaning device to enable the oxygen concentration in the chamber to be lower than a preset value;
putting the wafer to be cleaned into the chamber;
and introducing a cleaning solution containing water into the chamber to clean the wafer to be cleaned.
In the above aspect, the metal includes copper.
In the above scheme, the processing a chamber of a cleaning device to make the oxygen concentration in the chamber lower than a preset value includes:
exhausting air within the chamber;
and introducing cleaning protective gas into the chamber to enable the oxygen concentration in the chamber to be lower than a preset value.
In the above scheme, the purge protection gas comprises nitrogen.
In the above scheme, the oxygen concentration in the chamber is obtained by an oxygen concentration detection unit located in the chamber.
In the above scheme, the preset value is 5% by volume percentage.
An embodiment of the present invention further provides a cleaning apparatus, including: a chamber, and a gas control unit in communication with the chamber; wherein,
the chamber is used for accommodating a wafer to be cleaned;
the gas control unit is used for processing the chamber before the cleaning equipment cleans the wafer to be cleaned with the surface having the bare metal part by using the cleaning solution containing water, so that the oxygen concentration in the chamber is lower than a preset value.
In the above scheme, the gas control unit comprises a gas inlet unit and a gas outlet unit;
the air outlet unit is used for discharging air in the cavity;
the gas inlet unit is used for introducing cleaning protective gas into the cavity, so that the oxygen concentration in the cavity is lower than a preset value.
In the above aspect, the air intake unit includes a plurality of air intake passages and a switch member that controls the air intake passages;
the gas inlet unit is used for introducing the cleaning protective gas into the chamber through at least one gas inlet passage;
the switch component is used for controlling at least one of the air inlet passages to be communicated with the chamber before the cleaning equipment cleans the wafer to be cleaned with the cleaning solution containing water, wherein the surface of the wafer to be cleaned is provided with a naked metal part.
In the above scheme, the gas control unit comprises an oxygen concentration detection unit;
the oxygen concentration detection unit is used for detecting the oxygen concentration in the cavity.
In the above aspect, the metal includes copper.
In the above scheme, the purge protection gas comprises nitrogen.
In the above scheme, the preset value is 5% by volume percentage.
The cleaning method and the cleaning equipment provided by the embodiment of the invention are used for cleaning a wafer to be cleaned, wherein the surface of the wafer to be cleaned is provided with a bare metal part, and the method comprises the following steps: processing a chamber of a cleaning device to enable the oxygen concentration in the chamber to be lower than a preset value; putting the wafer to be cleaned into the chamber; and introducing a cleaning solution containing water into the chamber to clean the wafer to be cleaned. Therefore, the oxygen in the chamber can be prevented from reacting with the exposed metal part on the surface of the wafer to be cleaned in the wet cleaning process, and the metal part after reaction is prevented from being removed in the cleaning process by using the water-containing cleaning solution, namely, the phenomenon that the metal part is lost in the cleaning process is avoided.
Drawings
FIGS. 1a-1c are schematic illustrations of related art etching and cleaning of copper-containing wafers;
FIG. 2 is a schematic diagram and a chemical reaction formula of copper depletion during deionized water cleaning;
FIG. 3 is a block flow diagram of a cleaning method according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a cleaning apparatus according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the present invention; that is, not all features of an actual embodiment are described herein, and well-known functions and structures are not described in detail.
In the drawings, the size of layers, regions, elements, and relative sizes may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on" … …, "adjacent to … …," "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on … …," "directly adjacent to … …," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention. And the discussion of a second element, component, region, layer or section does not necessarily imply that a first element, component, region, layer or section is present in the invention.
Spatial relationship terms such as "under … …", "under … …", "below", "under … …", "above … …", "above", and the like, may be used herein for ease of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below … …" and "below … …" can encompass both an orientation of up and down. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In the following description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
Wet cleaning of wafers having exposed metal surfaces is often involved during the manufacturing process of semiconductor devices. Copper, the most commonly used conductive interconnect material in the art, is often exposed during the etching of the contact hole, and the wafer is cleaned after the etching step with an aqueous cleaning solution in order to remove residues and contaminants that adhere in the contact hole and to the copper surface.
FIGS. 1a-1c are schematic illustrations of related art etching and cleaning of copper-containing wafers. As can be seen from fig. 1a, the wafer comprises copper with silicon nitride and ethyl orthosilicate deposited on the copper in sequence; next, etching silicon nitride and tetraethoxysilane on the copper to expose the surface of the copper, specifically referring to fig. 1 b; after etching, the wafer is cleaned, and as can be seen from fig. 1c, the copper surface is over-etched.
In order to investigate the cause of the over-etching phenomenon, the inventors have cleaned a wafer having an exposed copper surface by etching with deionized water, hydrofluoric acid diluted with deionized water, and hydrofluoric acid containing no water, respectively, and have found that the copper surface of the wafer cleaned with deionized water and hydrofluoric acid diluted with deionized water is over-etched more severely, and the exposed copper surface is hardly over-etched when the wafer is cleaned with hydrofluoric acid containing no water.
Based on the above experimental results, the inventors found that when copper is cleaned with deionized water, the surface of copper is easily reacted with oxygen to generate copper oxide, and the copper oxide is reacted with hydrogen ions in water to generate copper ions and water, and the specific chemical reaction formula is as follows:
Cu+(1/2)O2→CuO
CuO+2H+→Cu2++H2O
fig. 2 shows a schematic of copper depletion of copper when rinsed with deionized water.
Based on this, the following technical solutions of the embodiments of the present invention are proposed.
An embodiment of the present invention provides a cleaning method for cleaning a wafer to be cleaned, where a surface of the wafer to be cleaned has a bare metal portion, the method including: processing a chamber of a cleaning device to enable the oxygen concentration in the chamber to be lower than a preset value; putting the wafer to be cleaned into the chamber; and introducing a cleaning solution containing water into the chamber to clean the wafer to be cleaned.
In a particular embodiment, the metal comprises copper. It is understood that the embodiments of the present invention can be applied to any metal other than copper, and since pure metal is oxidized by reaction with oxygen under normal conditions, metal parts made of any metal material can be cleaned by the cleaning method provided in the embodiments of the present invention in order to avoid the risk of loss of the metal parts during the cleaning process.
The cleaning method is described in detail below with reference to a wafer having exposed copper on the surface.
Fig. 3 is a block flow diagram of a cleaning method according to an embodiment of the present invention, and as shown in the figure, the method includes the following steps:
In step 301, the cleaning apparatus includes a wafer cleaning apparatus having a chamber for accommodating a wafer to be cleaned, and the chamber of the cleaning apparatus is processed before the wafer to be cleaned is placed in the cleaning apparatus, so that the oxygen concentration in the chamber is lower than a preset value.
In one embodiment, the processing the chamber of the cleaning apparatus to make the oxygen concentration in the chamber lower than the preset value includes: exhausting air within the chamber; and introducing cleaning protective gas into the chamber to enable the oxygen concentration in the chamber to be lower than a preset value. Specifically, a vacuuming device can be used for exhausting air in the chamber, and cleaning protective gas can be introduced into the chamber, wherein the cleaning protective gas can promote residual air in the chamber to be better exhausted.
In a specific embodiment, the purge shielding gas comprises nitrogen.
It will be appreciated that the lower the oxygen concentration in the chamber, the less likely an over-etch will form when cleaning copper, and thus the oxygen concentration in the chamber is preferably zero. However, in the actual process, it is difficult to achieve zero oxygen concentration, and it takes a long time.
In one embodiment, the predetermined value is 5% (volume ratio).
The cleaning apparatus further includes an oxygen concentration detection unit, which is provided, for example, in the chamber. In the process of processing the chamber, the oxygen concentration detection unit may acquire the oxygen concentration in the chamber in real time.
In step 302, the wafer to be cleaned is placed into the chamber. Specifically, the cleaning apparatus may further include a support unit disposed within the chamber for seating the wafer; and putting the wafer to be cleaned into the chamber, specifically, putting the wafer to be cleaned on the supporting unit in the chamber.
In one embodiment, the wafer to be cleaned is a wafer processed by an etching process, and the metal part is exposed in the etching process.
Because the chamber is processed in advance, the oxygen concentration is lower than the preset value, the surface of the metal part can not react with oxygen and water in the cleaning liquid in the cleaning process, and metal loss is caused.
In step 303, the cleaning solution containing water is introduced into the chamber to clean the wafer to be cleaned.
In some embodiments, the cleaning solution may be aqueous hydrofluoric acid, but is not limited thereto, and the cleaning solution may be other cleaning solutions commonly used in the art.
An embodiment of the present invention further provides a cleaning apparatus, where the cleaning apparatus includes: the method comprises the following steps: a chamber, and a gas control unit in communication with the chamber; wherein,
the chamber is used for accommodating a wafer to be cleaned;
the gas control unit is used for processing the chamber before the cleaning equipment cleans the wafer to be cleaned with the surface having the bare metal part by using the cleaning solution containing water, so that the oxygen concentration in the chamber is lower than a preset value.
Specifically, the gas control unit comprises a gas inlet unit and a gas outlet unit; the air outlet unit is used for discharging air in the cavity; the gas inlet unit is used for introducing cleaning protective gas into the cavity, so that the oxygen concentration in the cavity is lower than a preset value.
More specifically, the intake unit includes a plurality of intake passages and a switching member that controls the intake passages;
the gas inlet unit is used for introducing the cleaning protective gas into the chamber through at least one gas inlet passage;
the switch component is used for controlling at least one of the air inlet passages to be communicated with the chamber before the cleaning equipment cleans the wafer to be cleaned with the cleaning solution containing water, wherein the surface of the wafer to be cleaned is provided with a naked metal part.
In one embodiment, the gas control unit comprises an oxygen concentration detection unit; the oxygen concentration detection unit is used for detecting the oxygen concentration in the cavity.
In a particular embodiment, the metal comprises copper. It is understood that the embodiments of the present invention can be applied to any metal other than copper, and since pure metal is oxidized by reaction with oxygen under normal conditions, metal parts made of any metal material can be cleaned by the cleaning method provided in the embodiments of the present invention in order to avoid the risk of loss of the metal parts during the cleaning process.
In a specific embodiment, the purge shielding gas comprises nitrogen. However, other gases that do not react with the wafer and the cleaning solution may be used as the cleaning shielding gas.
It will be appreciated that the lower the oxygen concentration in the chamber, the less likely it is that the metal surface will form over-etching during cleaning, and thus the oxygen concentration in the chamber is preferably zero; however, in the actual process, it is difficult to achieve zero oxygen concentration, and it takes a long time.
In one embodiment, the predetermined value is 5% (volume percent).
Next, the cleaning apparatus provided by the embodiment of the present invention and the positive effects thereof will be described in further detail with reference to a specific example shown in fig. 4.
As can be seen from the figure, the cleaning apparatus includes a chamber 41, an inlet gas unit 42 and an outlet gas unit 43 communicating with the chamber, and an oxygen concentration detection unit 44 located in the chamber 41. The chamber is used for accommodating a wafer to be cleaned; the intake unit 42 includes a plurality of intake passages and a switching member for controlling the plurality of intake passages to communicate with the chamber 41; the gas outlet unit 43 is used for discharging gas in the chamber 41; the oxygen concentration detection unit 44 is configured to detect the oxygen concentration in the chamber 41.
The plurality of air inlet passages comprise a first air inlet passage 421 and a corresponding switch component 422 thereof, and the switch component 422 controls the first air inlet passage 421 to lead the cleaning protective gas to enter the chamber; the purge gas is preferably nitrogen.
It will be appreciated that the plurality of inlet passages further includes a second inlet passage 423 and its corresponding switch member 424, and that the second inlet passage 423 may be used to vent air into the chamber. In a particular embodiment, the air is purified and dried air.
In the actual cleaning process, the first air inlet passage or the second air inlet passage is selectively opened according to the surface condition of the wafer to be cleaned. For example, when the surface of the wafer to be cleaned has bare metal, in order to prevent the metal from reacting with oxygen in the air, the first gas inlet passage is opened, and cleaning protective gas is introduced into the chamber; when the surface of the wafer to be cleaned does not have bare metal, the second air inlet passage can be opened at the moment, and air is introduced into the chamber.
The cleaning apparatus further includes a Fan Filter Unit (FFU) 45, and the Fan Filter Unit 45 is located between the air inlet Unit 42 and the chamber 41, and is used for pushing and filtering the gas introduced from the air inlet Unit 42. In a particular embodiment, the fan filter unit 45 includes a fan 451, a primary filter bank 452, and a high efficiency filter bank 453.
The cleaning apparatus further comprises a support unit 46, the support unit 46 being adapted to support the wafer to be cleaned.
In the actual cleaning process, the air outlet unit 43 of the cleaning apparatus is first activated to discharge the air in the chamber 41. Then, the purge protection gas is introduced into the chamber 41 through the first gas inlet path 421 by the switching part 422. In this process, the oxygen concentration in the chamber 41 is acquired in real time by the oxygen concentration detection unit 44.
When the oxygen concentration is lower than a preset value, for example, 5% (by volume percentage), the wafer to be cleaned is placed in the chamber 41. Next, a cleaning solution containing water is introduced into the chamber 41 to clean the wafer to be cleaned.
It is understood that the lower the oxygen concentration in the chamber, the less likely that over-etching will be formed when cleaning the wafer to be cleaned, and thus the cleaning apparatus can perform cleaning of the wafer to be cleaned having a bare metal portion on the surface thereof using the aqueous cleaning solution.
It should be appreciated that reference throughout this specification to "one embodiment," "some embodiments," "other embodiments," "alternative embodiments," or "a particular embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, appearances of the phrases "an embodiment," "some embodiments," "other embodiments," "alternative embodiments," or "a particular embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. It should be understood that, in the various embodiments of the present application, the sequence numbers of the above-mentioned processes do not mean the execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application. The above-mentioned serial numbers of the embodiments of the present application are merely for description and do not represent the merits of the embodiments.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, and any modifications, equivalents, improvements, etc. that are within the spirit and principle of the present invention should be included in the present invention.
Claims (13)
1. A cleaning method for cleaning a wafer to be cleaned, the wafer to be cleaned having a surface with a bare metal portion, the method comprising:
processing a chamber of a cleaning device to enable the oxygen concentration in the chamber to be lower than a preset value;
putting the wafer to be cleaned into the chamber;
and introducing a cleaning solution containing water into the chamber to clean the wafer to be cleaned.
2. The cleaning method of claim 1, wherein the metal comprises copper.
3. The cleaning method according to claim 1, wherein the processing the chamber of the cleaning apparatus to make the oxygen concentration in the chamber lower than a preset value comprises:
exhausting air within the chamber;
and introducing cleaning protective gas into the chamber to enable the oxygen concentration in the chamber to be lower than a preset value.
4. The cleaning method of claim 3, wherein the cleaning shielding gas comprises nitrogen.
5. The cleaning method according to claim 1, wherein the oxygen concentration in the chamber is obtained by an oxygen concentration detection unit located in the chamber.
6. The cleaning method according to claim 1, wherein the preset value is 5% by volume.
7. A cleaning apparatus, comprising: a chamber, and a gas control unit in communication with the chamber; wherein,
the chamber is used for accommodating a wafer to be cleaned;
the gas control unit is used for processing the chamber before the cleaning equipment cleans the wafer to be cleaned with the surface having the bare metal part by using the cleaning solution containing water, so that the oxygen concentration in the chamber is lower than a preset value.
8. The cleaning apparatus according to claim 7, wherein the gas control unit includes an inlet gas unit and an outlet gas unit;
the air outlet unit is used for discharging air in the cavity;
the gas inlet unit is used for introducing cleaning protective gas into the cavity, so that the oxygen concentration in the cavity is lower than a preset value.
9. The washing apparatus according to claim 8, wherein the air intake unit includes a plurality of air intake passages and an opening and closing member that controls the air intake passages;
the gas inlet unit is used for introducing the cleaning protective gas into the chamber through at least one gas inlet passage;
the switch component is used for controlling at least one of the air inlet passages to be communicated with the chamber before the cleaning equipment cleans the wafer to be cleaned with the cleaning solution containing water, wherein the surface of the wafer to be cleaned is provided with a naked metal part.
10. The cleaning apparatus according to claim 7, wherein the gas control unit includes an oxygen concentration detection unit;
the oxygen concentration detection unit is used for detecting the oxygen concentration in the cavity.
11. The cleaning apparatus defined in claim 7, wherein the metal comprises copper.
12. The cleaning apparatus defined in claim 8, wherein the cleaning cover gas comprises nitrogen.
13. The cleaning apparatus according to claim 7, wherein the preset value is 5% by volume.
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