CN113092539A - High-stable-state PUF (physical unclonable function) utilizing semiconductor gas sensor - Google Patents
High-stable-state PUF (physical unclonable function) utilizing semiconductor gas sensor Download PDFInfo
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Abstract
The invention discloses a high-stability PUF (physical unclonable function) utilizing semiconductor gas sensors, which comprises an external excitation source, 8 semiconductor gas sensors, a resistance value acquisition module and a data processing module, wherein the external excitation source is used for creating a gas environment for the 8 semiconductor gas sensors so that the 8 semiconductor gas sensors respectively generate an output resistance value, the resistance value acquisition module is used for acquiring the output resistance values of the 8 semiconductor gas sensors and transmitting the output resistance values to the data processing module, and the data processing module takes every three of the 8 semiconductor gas sensors as a sensor cluster and takes C as C3 8Every two sensors in the sensor cluster are used as a comparison group and then are sequentially selected from C according to random order 2 56Selecting one comparison group from different comparison groups for resistance comparison, and generating 128-bit binary data as 128-bit output response output of the high-steady-state PUF; the method has the advantages of low cost and high safety.
Description
Technical Field
The present invention relates to a high steady-state PUF, and more particularly, to a high steady-state PUF using a semiconductor gas sensor.
Background
In recent years, the progress of gas sensor technology has led to the expansion of the coverage of the internet of things, and IoT devices have been integrated with various types of gas sensors and widely applied in the fields of heating and ventilation markets, transportation, national defense security, and the like. The gas sensor is used as one of entrances of system data of the Internet of things and connects a digital world and a physical world together. The sensing technology is centered on a sensor, and not only is a nerve terminal of the internet of things, but also is a necessary way and means for an IoT system to acquire data information. How to secure the real terminal in the IoT device from the data generator to the data receiver has become a hot point of research.
Some sensor-level authentication methods proposed at present mostly utilize a trusted computing platform embedded with monitoring equipment to implement encryption and authentication. For example trusteye. M4 for security sensing, which consists of an image sensor, a dedicated hardware security module and an arm port x-M4 processing chip. Such solutions are expensive and the security protection and communication of the keys used for encryption and device authentication are vulnerable to invasive or semi-invasive attacks, with low security.
Physical Unclonable Functions (PUFs) provide a secure and low cost solution using the random inherent properties of physical structures. As a new hardware security primitive, PUFs generate unique identifiers for devices using uncontrolled process random differences in the manufacturing process of the same design. Therefore, the high-stability PUF using the semiconductor gas sensor is designed to be used for safety authentication, and has low cost and high safety, and the high-stability PUF has important significance on the safety of the internet terminal.
Disclosure of Invention
The invention aims to provide a high-stability PUF (physical unclonable function) utilizing a semiconductor gas sensor, which is low in cost and high in safety.
The technical scheme adopted by the invention for solving the technical problems is as follows: a high-stability PUF (physical unclonable function) utilizing semiconductor gas sensors comprises an external excitation source, 8 semiconductor gas sensors, a resistance value acquisition module and a data processing module, wherein 8 semiconductorsThe gas sensors are respectively connected with the resistance value acquisition module, the resistance value acquisition module is connected with the data processing module, the external excitation source is used for creating a gas environment for 8 semiconductor gas sensors to enable the 8 semiconductor gas sensors to respectively generate an output resistance value, the resistance value acquisition module is used for acquiring the output resistance values of the 8 semiconductor gas sensors and transmitting the output resistance values to the data processing module, and the data processing module takes every three of the 8 semiconductor gas sensors as a sensor cluster to obtain the output resistance values
When the data processing module receives the output resistance values of the 8 semiconductor gas sensors output by the resistance value acquisition module, the data processing module is used for processing the output resistance values of the 8 semiconductor gas sensors
Every two sensors in each sensor cluster are used as a comparison group to obtain
A different comparison set, then in random order from
Selecting one comparison group from different comparison groups, taking one sensor cluster in the comparison group as a left cluster and the other sensor cluster as a right cluster, comparing the sum of the output resistance values of three semiconductor gas sensors in the left cluster with the sum of the output resistance values of three semiconductor gas sensors in the right cluster, if the sum of the output resistance values of three semiconductor gas sensors in the left cluster is greater than the sum of the output resistance values of three semiconductor gas sensors in the right cluster, generating a comparison result 1, otherwise generating a comparison result 0, and when the comparison is finished, finishing C25 6After the comparison of different comparison groups, 128 comparison results are generated, the 128 comparison results are sequentially arranged according to the generation sequence to form 128-bit binary data, and the data processing module is used for processing the 128 bitsBinary data is output as a 128-bit output response of the high-steady-state PUF.
Each semiconductor gas-sensitive sensor comprises a base, an alumina ceramic tube, a gas-sensitive material layer, two groups of Pt wires, a Ni-Cr alloy wire and two Au poles, wherein the two Au poles are annular, the two Au poles are attached to the outer side wall of the alumina ceramic tube in a surrounding mode at intervals from left to right, each group of Pt wires respectively comprises two Pt wires, the two groups of Pt wires correspond to the two Au poles one by one, the two Pt wires of each group of Pt wires are correspondingly connected with the upper end and the lower end of the Au pole in one group of Pt wires and one Au pole, the gas-sensitive material layer is formed by coating a gas-sensitive material on the outer side wall of the alumina ceramic tube, the two groups of Pt wires penetrate out of the gas-sensitive material layer, the Ni-Cr alloy wire serves as a heating wire and penetrates through the alumina ceramic tube along the central axis of the alumina ceramic tube, each Pt wire in the two groups of Pt wires is respectively fixed on the base to support the alumina ceramic tube, and two ends of the Ni-Cr alloy wire are fixed on the base. In the structure of the semiconductor gas-sensitive sensor, the gas-sensitive material is separated from the heating wire, so that the contact between the heating wire and the gas-sensitive material is avoided, and meanwhile, the interference of the electric leakage of the insulating layer in the region where the gas-sensitive material is located on a sensitive test signal is reduced, so that the semiconductor gas-sensitive sensor has higher sensitivity.
The gas-sensitive material is prepared by the following method: 5mg of Pb (NO)3)2·2H2O, 701mg SnCl4·5H2Dissolving O and 1200mg of polyvinylpyrrolidone (PVP) in a mixed solution of 5ml of dimethylformamide and 5ml of ethanol, and stirring at room temperature until the mixture is uniformly mixed to obtain a mixed reagent; loading the mixed reagent into an injector, arranging a tin foil at a position 15cm away from the injector nozzle, connecting the tin foil as a cathode with a negative electrode of a high-voltage power supply, connecting the injector nozzle as an anode with a positive electrode of the high-voltage power supply, setting the output voltage of the high-voltage power supply to be 16kV, starting the high-voltage power supply, spraying the mixed reagent by an injector nozzle to form a fiber material, and obtaining the fiber materialHeating to 600 ℃ at a heating rate of 1 ℃/min, and then preserving heat for 2 hours to obtain a nano material; mixing the nano material and deionized water according to the weight ratio of 1: 100 to form paste, which is the gas sensitive material. Compared with single SnO used conventionally in the method2The material changes the property of the gas sensitive material by doping heavy metal elements, thereby further improving the sensitivity of the prepared semiconductor gas sensitive sensor and enhancing the sensitivity of the high-stability PUF.
Compared with the prior art, the high-stability PUF has the advantages that the high-stability PUF is constructed through the external excitation source, 8 semiconductor gas sensors, the resistance value acquisition module and the data processing module, the 8 semiconductor gas sensors are respectively connected with the resistance value acquisition module, the resistance value acquisition module is connected with the data processing module, the external excitation source is used for creating a gas environment for the 8 semiconductor gas sensors, the 8 semiconductor gas sensors respectively generate an output resistance value, the resistance value acquisition module is used for acquiring the output resistance values of the 8 semiconductor gas sensors and transmitting the output resistance values to the data processing module, and the data processing module takes every three of the 8 semiconductor gas sensors as a sensor cluster to obtain the PUF
When the data processing module adopts the output resistance values of the 8 semiconductor gas sensors output by the resistance value acquisition module, the data processing module will perform data processing on the output resistance values
Every two sensors in each sensor cluster are used as a comparison group to obtain
A different comparison set, then in random order from
Selecting one comparison group from different comparison groups, taking one sensor cluster in the comparison group as a left cluster, taking the other sensor cluster as a right cluster, and comparing three semiconductors in the left clusterThe sum of the output resistance values of the gas sensors and the sum of the output resistance values of the three semiconductor gas sensors in the right cluster, if the sum of the output resistance values of the three semiconductor gas sensors in the left cluster is larger than the sum of the output resistance values of the three semiconductor gas sensors in the right cluster, a comparison result 1 is generated, otherwise a comparison result 0 is generated, and when the comparison is finished, the sum of the output resistance values of the three semiconductor gas sensors in the right cluster is larger than the sum of the output resistance values
After the comparison of different comparison groups, 128 comparison results are generated, the 128 comparison results are sequentially arranged according to the generation sequence to form 128-bit binary data, the data processing module outputs the 128-bit binary data as 128-bit output response of the high-stability PUF, therefore, the invention utilizes random texture characteristic information of 8 semiconductor gas sensors with the same design in the manufacturing process to generate a unique identifier for equipment, the semiconductor gas sensors have lower cost, the data processing module adopts a random resistance value clustering comparison method, and the data processing module has strong randomness and higher safety, so that the high-stability PUF has lower cost and higher safety when used for completing data safety transmission and information mutual authentication.
Drawings
FIG. 1 is a block diagram of a highly stable PUF using a semiconductor gas sensor according to the present invention;
FIG. 2 is a schematic diagram showing the overall structure of a semiconductor gas sensor using a highly stable PUF of the semiconductor gas sensor according to the present invention;
FIG. 3 is a schematic view of a partial structure of a semiconductor gas sensor using a highly stable PUF of the semiconductor gas sensor according to the present invention;
FIG. 4 is a diagram illustrating a process for manufacturing a semiconductor gas sensor using a highly stable PUF of the semiconductor gas sensor according to the present invention;
FIG. 5 is an XRD representation of the gas sensitive material of the semiconductor gas sensor using the highly stable PUF of the semiconductor gas sensor according to the present invention;
FIG. 6 is a graph of the response of a semiconductor gas sensor of the present invention utilizing a highly stable PUF of the semiconductor gas sensor;
FIG. 7 is a graph showing a Hamming distance distribution simulation of a highly stable PUF using a semiconductor gas sensor according to the present invention;
FIG. 8 is a graph showing a simulation of the randomness probability distribution of a highly stable PUF using a semiconductor gas sensor according to the present invention;
fig. 9 is a graph showing the reliability simulation of the high steady-state PUF according to the present invention at different voltages.
Detailed Description
The invention is described in further detail below with reference to the accompanying examples.
Example (b): as shown in fig. 1, a high-stable PUF using semiconductor gas sensors, comprising an external excitation source, 8 semiconductor gas sensors, a resistance value collection module and a data processing module, wherein the 8 semiconductor gas sensors are respectively connected with the resistance value collection module, the resistance value collection module is connected with the data processing module, the external excitation source is used for creating a gas environment for the 8 semiconductor gas sensors, so that the 8 semiconductor gas sensors respectively generate an output resistance value, the resistance value collection module is used for collecting the output resistance values of the 8 semiconductor gas sensors and transmitting the output resistance values to the data processing module, and the data processing module takes every three of the 8 semiconductor gas sensors as a sensor cluster to obtain a PUF
When the data processing module adopts the output resistance values of the 8 semiconductor gas sensors output by the resistance value acquisition module, the data processing module will perform data processing on the output resistance values
Every two sensors in each sensor cluster are used as a comparison group to obtain
A different comparison set, then in random order from
Selecting one of the comparison groups from the different comparison groups, and sensing one of the comparison groupsThe device cluster is used as a left cluster, the other sensor cluster is used as a right cluster, the sum of the output resistance values of the three semiconductor gas sensors in the left cluster is compared with the sum of the output resistance values of the three semiconductor gas sensors in the right cluster, if the sum of the output resistance values of the three semiconductor gas sensors in the left cluster is larger than the sum of the output resistance values of the three semiconductor gas sensors in the right cluster, a comparison result 1 is generated, otherwise, a comparison result 0 is generated, and when the comparison is finished, when the comparison result 0 is generated
After the comparison of the different comparison groups, 128 comparison results are generated, the 128 comparison results are sequentially arranged according to the generation sequence to form 128-bit binary data, and the data processing module outputs the 128-bit binary data as the 128-bit output response of the high-steady-state PUF.
In this embodiment, as shown in fig. 2 and 3, each semiconductor gas sensor includes a base 1, an alumina ceramic tube 2, a gas sensitive material layer 3, two sets of Pt lines, a Ni-Cr alloy line 4, and two Au electrodes 5, each of the two Au electrodes 5 is annular, the two Au electrodes 5 are attached to the outer sidewall of the alumina ceramic tube 2 at intervals in a left-right manner, each set of Pt lines includes two Pt lines 6, the two sets of Pt lines correspond to the two Au electrodes 5 one by one, the corresponding set of Pt lines corresponds to one of the Au electrodes 5, the two Pt lines 6 of the set of Pt lines are connected to the upper and lower ends of the Au electrode 5, the gas sensitive material layer 3 is formed by coating the gas sensitive material on the outer sidewall of the alumina ceramic tube 2, the two sets of Pt lines both penetrate from the gas sensitive material layer 3, the Ni-Cr alloy line 4 serves as a heating wire, and penetrates through the alumina ceramic tube 2 along the central axis of the alumina ceramic tube 2, each Pt wire 6 in the two groups of Pt wires is respectively fixed on the base 1 to support the alumina ceramic tube 2, and two ends of the Ni-Cr alloy wire 4 are fixed on the base 1.
As shown in fig. 4, in this embodiment, the gas sensitive material is prepared by the following method: 5mg of Pb (NO)3)2·2H2O, 701mg SnCl4·5H2A first mixed solution 7 of O and 1200mg of polyvinylpyrrolidone (PVP) was dissolved in a second mixed solution 8 of 5ml of dimethylformamide and 5ml of ethanol, and stirred at room temperature until the mixture was uniformMixing to obtain a mixed reagent 9; loading a mixed reagent 9 into an injector 10, arranging a tin foil 11 at a position 15cm away from a nozzle of the injector, connecting the tin foil 11 serving as a cathode with a negative electrode of a high-voltage power supply 12, connecting the nozzle of the injector serving as an anode with a positive electrode of the high-voltage power supply 12, setting the output voltage of the high-voltage power supply 12 to be 16kV, starting the high-voltage power supply 12, spraying the mixed reagent 9 by a nozzle of the injector to form a fiber material 13, heating the obtained fiber material 13 to 600 ℃ at a heating rate of 1 ℃/min, and then preserving heat for 2 hours to obtain a nano material; mixing the nano material and deionized water according to the weight ratio of 1: 100 to form paste, which is the gas sensitive material.
XRD analysis is carried out on the gas-sensitive material of the semiconductor gas sensor utilizing the high-steady-state PUF of the semiconductor gas sensor, and the XRD characteristic diagram of the gas-sensitive material is shown in figure 5. As can be seen from the graph in FIG. 5, the diffraction peaks of (110), (101), (200), (211), (220), (310), (321), etc. match with the peak patterns of JCPDS standard card (PDF #77-0447) of SnO2, and the doping of Pd has the changed SnO2The reason why the crystal structure of (1) has no characteristic peak of PdO in the spectrum is that PdO accounts for a very small mass ratio in the prepared gas sensor.
The magnitude of the response of the semiconductor gas sensor is defined as:
R＝Rg/Ra (1)
wherein Ra is the resistance of the semiconductor gas sensor in the air, and Rg is the resistance of the semiconductor gas sensor in the target gas. The variation trend of the response of the semiconductor gas sensor along with time can be calculated by using the formula (1). Two prepared samples of the semiconductor gas sensor (semiconductor gas sensor 1 and semiconductor gas sensor 2) of the present invention were subjected to two cycle tests, and the response curve thereof is shown in fig. 6. As can be seen from fig. 6, at the same concentration of formaldehyde gas of 200ppm, the response of the semiconductor gas sensor 1 and the response of the semiconductor gas sensor 2 have the same trend, and the relationship between the resistance R1 of the semiconductor gas sensor 1 and the resistance R2 of the semiconductor gas sensor 2 is maintained, which greatly reduces the possibility of the occurrence of the response flip phenomenon during the resistance comparison.
Uniqueness represents the response discrimination of multiple PUFs to the same stimulus, and is calculated by the inter-chip Hamming Distance (HD). In the ideal case, the uniqueness is close to 50%. Uniqueness can be calculated by equation (2):
wherein k is the number of PUFs, RiAnd RjThe output responses of the ith and jth PUFs, HD (R), respectivelyi，Rj) The hamming distance for the ith and jth PUFs.
The hamming distance distribution of the output response of the highly stable PUF using the semiconductor gas sensor of the present invention is shown in fig. 7. The uniqueness of the output response of the high-steady-state PUF using the semiconductor gas sensor of the present invention calculated using equation (2) is 49.039%, close to the ideal value of 50%.
Randomness is used to characterize the distribution of logic 0's and logic 1's in the PUF output response. Equation (3) can be used to calculate randomness:
Randomness＝(1-|1-2P(r＝1)|)×100％ (3)
where r is the output response and P is the probability of 1 in the output response. Ideally, the probability of a logic 0 and a logic 1 should be the same, where the randomness is 100%. 20 groups of high-stable PUF samples utilizing the semiconductor gas sensor are prepared and tested, and 2560-bit binary responses are obtained in total. The number of "0" is 1242, the number of "1" is 1318, and the randomness of the highly stable PUF using the semiconductor gas sensor of the present invention calculated by equation (3) is 97.03%. The statistics for each set of samples are shown in fig. 8. As can be seen from fig. 8, 6 of the 20 high-steady-state PUF samples using the semiconductor gas sensor of the present invention are 100% of ideal values, the sample 11 having the largest deviation from the ideal values is the sample 11, and the deviation rate of the sample 11 is 9.38%.
The reliability of a PUF represents the likelihood that a given input stimulus will always produce a correct output response. Ideally, the reliability is 100%, which means that the PUF will always produce the correct response. Equation (4) can be used to calculate the reliability of the n-bit response:
wherein HD (R)i，Rj) The hamming distance between the output responses of the ith and jth PUFs generated under different circumstances. The variable k represents the number of PUFs. The reliability of 5 selected samples of the high steady-state PUF using the semiconductor gas sensor of the present invention was tested over a voltage range of 4.2V to 4.9V (in 0.1V increments). 4.6V was chosen as the reference point. The statistical results are shown in fig. 9. A total of 5 samples were prepared for testing, and in fig. 9, the PUF1 represents sample 1, the PUF2 represents sample 2, the PUF3 represents sample 3, the PUF4 represents sample 4, and the PUF5 represents sample 5, and it can be seen from fig. 9 that the general tendency of the high-steady-state PUF reliability using the semiconductor gas sensor of the present invention to decline as the voltage deviates from the reference point is a typical characteristic of PUFs.
Claims (3)
1. A high-stability PUF (physical unclonable function) utilizing semiconductor gas sensors is characterized by comprising an external excitation source, 8 semiconductor gas sensors, a resistance acquisition module and a data processing module, wherein the 8 semiconductor gas sensors are respectively connected with the resistance acquisition module, the resistance acquisition module is connected with the data processing module, the external excitation source is used for creating a gas environment for the 8 semiconductor gas sensors to enable the 8 semiconductor gas sensors to respectively generate an output resistance, the resistance acquisition module is used for acquiring the output resistance of the 8 semiconductor gas sensors and transmitting the output resistance to the data processing module, and the data processing module takes every three of the 8 semiconductor gas sensors as a sensor cluster to obtain C3 8When the data processing module adopts 8 semiconductor gas sensors output by the resistance value acquisition moduleWhen the resistance value is output, the data processing module outputs C3 8Every two sensors in each sensor cluster are used as a comparison group to obtain C2 56A different comparison set, then in random order from C2 56Selecting one comparison group from different comparison groups, taking one sensor cluster in the comparison group as a left cluster and the other sensor cluster as a right cluster, comparing the sum of the output resistance values of three semiconductor gas sensors in the left cluster with the sum of the output resistance values of three semiconductor gas sensors in the right cluster, if the sum of the output resistance values of three semiconductor gas sensors in the left cluster is greater than the sum of the output resistance values of three semiconductor gas sensors in the right cluster, generating a comparison result 1, otherwise generating a comparison result 0, and when C is finished, generating a comparison result 02 56After the comparison of the different comparison groups, 128 comparison results are generated, the 128 comparison results are sequentially arranged according to the generation sequence to form 128-bit binary data, and the data processing module outputs the 128-bit binary data as the 128-bit output response of the high-steady-state PUF.
2. The PUF using the semiconductor gas sensor according to claim 1, wherein each of the semiconductor gas sensors comprises a base, an alumina ceramic tube, a gas-sensitive material layer, two sets of Pt wires, a Ni-Cr alloy wire and two Au poles, the two Au poles are annular, the two Au poles are attached to the outer sidewall of the alumina ceramic tube at intervals from left to right, each set of Pt wires comprises two Pt wires, the two sets of Pt wires correspond to the two Au poles one by one, the corresponding set of Pt wires corresponds to one Au pole, the two Pt wires of the set of Pt wires are correspondingly connected to the upper and lower ends of the Au pole, the gas-sensitive material layer is formed by coating the gas-sensitive material on the outer sidewall of the alumina ceramic tube, and the two sets of Pt wires penetrate out of the gas-sensitive material layer, the Ni-Cr alloy wire is used as a heating wire and penetrates through the alumina ceramic tube along the central axis of the alumina ceramic tube, each Pt wire in the two groups of Pt wires is respectively fixed on the base to support the alumina ceramic tube, and two ends of the Ni-Cr alloy wire are fixed on the base.
3. The highly stable PUF according to claim 2, wherein said gas sensitive material is prepared by the following method: 5mg of Pb (NO)3)2·2H2O, 701mg SnCl4·5H2Dissolving O and 1200mg of polyvinylpyrrolidone (PVP) in a mixed solution of 5ml of dimethylformamide and 5ml of ethanol, and stirring at room temperature until the mixture is uniformly mixed to obtain a mixed reagent; loading a mixed reagent into an injector, arranging a tin foil at a position which is 15cm away from a nozzle of the injector, connecting the tin foil serving as a cathode with a negative electrode of a high-voltage power supply, connecting the nozzle of the injector serving as an anode with a positive electrode of the high-voltage power supply, setting the output voltage of the high-voltage power supply to be 16kV, starting the high-voltage power supply, spraying the mixed reagent by a nozzle of the injector to form a fiber material, heating the obtained fiber material to 600 ℃ at a heating rate of 1 ℃/min, and then preserving heat for 2 hours to obtain a nano material; mixing the nano material and deionized water according to the weight ratio of 1: 100 to form paste, which is the gas sensitive material.
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