CN113091968A - Flexible piezoresistive sensor with multilayer structure and preparation method thereof - Google Patents
Flexible piezoresistive sensor with multilayer structure and preparation method thereof Download PDFInfo
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- CN113091968A CN113091968A CN202110366612.2A CN202110366612A CN113091968A CN 113091968 A CN113091968 A CN 113091968A CN 202110366612 A CN202110366612 A CN 202110366612A CN 113091968 A CN113091968 A CN 113091968A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
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Abstract
The invention discloses a flexible piezoresistive sensor with a multilayer structure and a preparation method thereof. The first flexible piezoresistive multilayer structure component comprises a first flexible piezoresistive planar base layer, a first porous dome structure, and a first antenna structure, and the first antenna structure of the first flexible piezoresistive multilayer structure is in contact with the second antenna structure of the second flexible piezoresistive multilayer structure. The flexible piezoresistive sensor with the multilayer structure senses the stress change in a low range through the contact of the antenna structure, so that the sensitivity of the sensor is improved; and the sensing range of the sensor is enlarged by sensing the change of the stress in a large range and a large range through the contact deformation of the porous dome.
Description
Technical Field
The invention relates to the technical field of piezoresistive functional materials, in particular to a flexible piezoresistive sensor with a multilayer structure and a preparation method thereof.
Background
With the rapid development of industrial intelligent technology, research on sensing environmental information by simulating a biomechanical receptor in intelligent devices such as intelligent robots, self-diagnostic instruments, medical care electronic devices, artificial limbs and the like is receiving more and more attention. Among them, a mechanical sensor that converts physical stimulation into a measurable electrical signal has attracted much attention as the most important component of such intelligent electronic products. Therefore, related researchers have intensively researched and applied and developed the electromechanical response mechanical sensor based on four main sensing mechanisms of piezoresistivity, capacitance, piezoelectricity and triboelectricity.
Compared with mechanical sensors such as capacitive sensors, piezoelectric sensors, and friction sensors, piezoresistive mechanical sensors are the first choice for sensors due to their higher spatial resolution, relatively simple input/output control system, and lower noise sensitivity. However, the conventional flexible piezoresistive mechanical sensor focuses on pursuing high sensitivity, and neglects the problem that the detection range of the flexible piezoresistive mechanical sensor is too narrow.
Disclosure of Invention
The invention aims to provide a flexible piezoresistive sensor with a multilayer structure and a preparation method thereof, and the flexible piezoresistive sensor with the multilayer structure is combined with a multi-layer structure of an antenna structure, so that the problem of narrow sensing range of a traditional sensor is solved while the fine load sensing performance of the flexible sensor is improved.
In order to achieve the purpose, the invention provides the following scheme:
a flexible piezoresistive sensor with a multilayer structure comprises two identical flexible piezoresistive multilayer structure components, namely a first flexible piezoresistive multilayer structure component and a second flexible piezoresistive multilayer structure component;
the first flexible piezoresistive multilayer structure component comprises a first flexible piezoresistive planar base layer, a first antenna structure and a first porous dome structure; the upper surface of the first flexible piezoresistive planar substrate layer is connected with a first electrode, and the lower surface of the first flexible piezoresistive planar substrate layer is sequentially connected with the first porous dome structure and the first antenna structure;
the second flexible piezoresistive multilayer structural component comprises a second flexible piezoresistive planar base layer, a second antenna structure and a second porous dome structure; the upper surface of the second flexible piezoresistive planar substrate layer is connected with a second electrode, and the lower surface of the second flexible piezoresistive planar substrate layer is sequentially connected with the second porous dome structure and the second antenna structure;
the first antenna structure is in contact with the second antenna structure.
Optionally, the first antenna structure is identical to the second antenna structure; the first antenna structure comprises a plurality of antennas; wherein one of the antennae is located at the center of the first porous dome structure and the other antennae are evenly distributed around the first porous dome structure.
Optionally, the antenna at the center of the first porous dome structure is at an angle of 90 ° to the horizontal plane of the first porous dome structure; the included angles between the antennae located on the periphery of the first porous dome structure and the horizontal plane of the first porous dome structure are both 45 degrees.
Optionally, the first antenna structure comprises five antennas.
Optionally, the first porous dome structure is the same as the second porous dome structure; the first porous dome structure comprises a first dome structure and a first cylindrical structure which are arranged up and down, the first dome structure is connected with the first antenna structure, and the first cylindrical structure is connected with the first flexible piezoresistive planar substrate layer.
In order to achieve the purpose, the invention also provides the following technical scheme:
a method of making a flexible piezoresistive sensor having a multilayer structure, comprising:
processing the template according to the multilayer structure form to obtain a flexible piezoresistive multilayer structure part generating mold;
preparing a piezoresistive composite material; the piezoresistive composite material is used for manufacturing a flexible piezoresistive multilayer structure component;
paving the piezoresistive composite material into the flexible piezoresistive multilayer structure component generating mold, and then carrying out vacuum heating treatment to obtain a first flexible piezoresistive multilayer structure component;
paving the piezoresistive composite material into the flexible piezoresistive multilayer structure component generating mold, and then performing vacuum heating treatment again to obtain a second flexible piezoresistive multilayer structure component;
and assembling the first flexible piezoresistive multilayer structure component and the second flexible piezoresistive multilayer structure component to obtain the flexible piezoresistive sensor with a multilayer structure.
Optionally, the processing the template to obtain the flexible piezoresistive multilayer structure component generating mold according to the multilayer structure form specifically includes:
performing first hole punching treatment on the template to obtain a porous dome generating mold;
performing a second punching process on the center of the porous dome forming mold to obtain a first antenna forming mold; the included angle between the central axis of the first antenna generating mold and the horizontal plane of the template is 90 degrees;
performing second punching treatment on the periphery of the porous dome generating mold for multiple times to obtain a plurality of second antenna generating molds so as to obtain a flexible piezoresistive multilayer structure part generating mold; and the included angles between the central axes of the second antenna generating molds and the horizontal plane of the template are all 45 degrees.
Optionally, the hole punching aperture of the first hole punching process is 1 mm, the hole punching aperture of the second hole punching process is 0.08 mm, and the hole punching depth of the second hole punching process is greater than the hole punching depth of the first hole punching process.
Optionally, the preparing the piezoresistive composite material specifically comprises:
mixing and stirring a multi-walled carbon nanotube, a dispersing agent and absolute ethyl alcohol to obtain a first mixture;
sonicating the first mixture;
adding a polydimethylsiloxane matrix component into the first mixture, and mixing and stirring to obtain a second mixture;
and stirring the second mixture until the absolute ethyl alcohol is completely volatilized, adding a polydimethylsiloxane curing agent component into the second mixture, and mixing and stirring to obtain the piezoresistive composite material.
Optionally, the assembling the first flexible piezoresistive multilayer structure component and the second flexible piezoresistive multilayer structure component to obtain the flexible piezoresistive sensor with a multilayer structure specifically includes:
placing the first flexible piezoresistive multi-layer structural component and the second flexible piezoresistive multi-layer structural component one above the other with the first antenna structure of the first flexible piezoresistive multi-layer structural component in contact with the second antenna structure of the second flexible piezoresistive multi-layer structural component;
coating silver adhesive on one surface of the first flexible piezoresistive multilayer structure component without the antenna structure, and leading out a first electrode;
coating silver glue on one surface of the second flexible piezoresistive multilayer structure component without the antenna structure, and leading out a second electrode;
and respectively coating insulating coatings on the silver colloid of the first flexible piezoresistive multilayer structure component and the silver colloid of the second flexible piezoresistive multilayer structure component, and then carrying out packaging process to obtain the flexible piezoresistive sensor with the multilayer structure.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the flexible piezoresistive multi-layer structure sensor is provided with two identical flexible piezoresistive multi-layer structure components, a first antenna structure of a first flexible piezoresistive multi-layer structure component is in contact with a second antenna structure of a second flexible piezoresistive multi-layer structure component, and the pressure applied to the flexible piezoresistive sensor is sensed through the stress bending of the first antenna structure and the second antenna structure, so that the function of hypersensitive sensing on slight load change is realized; and the first porous dome structure of the first flexible piezoresistive multilayer structure component and the second porous dome structure of the second flexible piezoresistive multilayer structure component are pressed to deform, so that the sensing of larger compressive load is realized, and the sensing range of the sensor is expanded.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a schematic structural diagram of a flexible piezoresistive sensor having a multilayer structure according to the present invention;
FIG. 2 is a three-dimensional perspective view of the antenna structure of the flexible piezoresistive sensor according to the present invention, which has a multilayer structure;
FIG. 3 is a flow chart illustrating the manufacturing process of the flexible piezoresistive sensor with a multi-layer structure according to the present invention;
FIG. 4 is a front view of a flexible piezoresistive sensor having a multilayer structure according to the present invention after being subjected to different pressures.
Description of the symbols:
1-a first flexible piezoresistive planar substrate layer, 2-a first dome structure, 3-a first cylindrical structure, 4-a first antenna structure, 5-a second flexible piezoresistive planar substrate layer, 6-a second dome structure, 7-a second cylindrical structure, 8-a second antenna structure.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a flexible piezoresistive sensor with a multilayer structure, which can sense slight stress change by using an antenna structure of two identical flexible piezoresistive multilayer structure components, thereby improving the sensitivity and realizing the sensing in a wide stress range by using a porous dome structure.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Example one
As shown in fig. 1, the present embodiment provides a flexible piezoresistive sensor with a multilayer structure, which includes two identical flexible piezoresistive multilayer structure components, namely a first flexible piezoresistive multilayer structure component and a second flexible piezoresistive multilayer structure component; the first flexible piezoresistive multilayer structural component comprises a first flexible piezoresistive planar substrate layer 1, a first antenna structure 4 and a first porous dome structure; the upper surface of the first flexible piezoresistive planar substrate layer 1 is connected with a first electrode, and the lower surface of the first flexible piezoresistive planar substrate layer 1 is sequentially connected with the first porous dome structure and the first antenna structure 4; the second flexible piezoresistive multilayer structural component comprises a second flexible piezoresistive planar substrate layer 5, a second antenna structure 8 and a second porous dome structure; the upper surface of the second flexible piezoresistive planar substrate layer 5 is connected with a second electrode, and the lower surface of the second flexible piezoresistive planar substrate layer 5 is sequentially connected with the second porous circular top layer and the second antenna structure 8; the first antenna structure 4 is in contact with the second antenna structure 8.
Specifically, the first porous dome structure comprises a first dome structure 2 and a first cylindrical structure 3 which are arranged up and down, and the first dome structure 2 is connected with the first antenna structure 4; further, the smooth end face of the first dome structure 2 is connected with the first cylindrical structure 3, and the convex end face of the first dome structure 2 is connected with the first antenna structure 4; the first cylindrical structure 3 is connected to the first flexible piezoresistive planar substrate layer 1. The first porous dome structure is identical to the second porous dome structure.
Further, the first antenna structure 4 is identical to the second antenna structure 8; the first antenna structure 4 comprises a plurality of antennas; wherein one of the antenna structures is located at the center of the first porous dome structure, and the other antennas are uniformly distributed around the first porous dome structure. In this embodiment, the first antenna structure 4 includes five antennas, the second antenna structure 8 includes five antennas, and the first antenna structure 4 is particularly located on the first dome structure 2 at the upper end of the first porous dome structure. The antennae in this embodiment are all bendable antennae.
Preferably, the angle of the antenna at the center of the first porous dome structure is 90 ° from the horizontal plane of the first porous dome structure; the included angles between the antenna at the periphery of the first porous dome structure and the horizontal plane of the first porous dome structure are both 45 degrees, and fig. 2 is a three-dimensional perspective illustration of the antenna structure of the flexible piezoresistive sensor with a multilayer structure.
In the embodiment, the pressure applied to the flexible piezoresistive sensor is sensed by the first antenna structure and the second antenna structure being stressed and bent, so that the function of hypersensitive sensing on slight load changes is realized; and the first porous dome structure of the first flexible piezoresistive multilayer structure component and the second porous dome structure of the second flexible piezoresistive multilayer structure component are pressed to deform, so that the sensing of larger compressive load is realized, and the sensing range of the sensor is expanded. Specifically, as shown in fig. 4 (a), when the flexible piezoresistive sensor having a multilayer structure is not subjected to pressure, an antenna located at the center of a first porous dome structure is in contact with an antenna located at the center of a second porous dome structure; as shown in fig. 4 (b), when the flexible piezoresistive sensor having a multi-layer structure is subjected to a slight compressive load, the antenna located at the center of the first porous dome structure is completely deformed to come into surface contact with the correspondingly bent antenna located at the center of the second porous dome structure, resulting in a change in the overall resistivity of the piezoresistive material; when the flexible piezoresistive sensor with the multilayer structure is subjected to a large compressive load, as shown in (c) of fig. 4, the antenna structure is completely pressed and bent, so that the first dome structure 2 at the upper end of the first porous dome structure is in contact with the second dome structure 6 of the second porous dome structure, and the contact area change can cause further reduction of the overall resistivity of the piezoresistive material; as shown in (d) of fig. 4, when a greater compressive load is applied, the first cylindrical structure 3 at the lower end of the first porous dome structure and the second cylindrical structure 7 at the lower end of the second porous dome structure are deformed by compression, which results in further change of the overall resistivity of the piezoresistive material, thereby increasing the stress sensing range of the flexible piezoresistive sensor with a multilayer structure according to the present invention.
Further, the first flexible piezoresistive planar substrate layer 1 is connected with the first electrode through silver glue; the second flexible piezoresistive planar substrate layer 5 is connected to the second electrode by silver glue. In this embodiment, the first electrode and the second electrode are connected to a resistance measuring device, so that the change of the external mechanical load is sensed in real time by monitoring the change of the resistance value of the flexible piezoresistive sensor.
Preferably, the first electrode and the second electrode are both copper electrodes. Specifically, the copper electrode is adhered to the surface of the flexible piezoresistive material layer through silver colloid.
Example two
As shown in fig. 3, this embodiment provides a method for manufacturing a flexible piezoresistive sensor having a multilayer structure, including:
step 101: and processing the template according to the multilayer structure form to obtain the flexible piezoresistive multilayer structure part generating mold. In this embodiment, the die plate is laser machined to yield a flexible piezoresistive multilayer structural component creating die.
According to the multilayer structure form, the flexible piezoresistive multilayer structure part generating mold obtained by processing the template specifically comprises the following steps:
performing first hole punching treatment on the template to obtain a porous dome generating mold;
in this embodiment, the performing a first hole-punching process on the template to obtain a porous dome-forming mold specifically includes: drawing the punching aperture, the punching number and the hole arrangement rule of the first punching treatment by using drawing software to obtain a punching drawing; and carrying out first drilling treatment on the template by using a laser processing device according to the drilling drawing to obtain the porous dome generating die. Further, the arrangement of the holes processed by the first punching is uniformly arranged in a square shape, and the number of the punched holes can be controlled manually, in this embodiment, 7 × 7 is taken as an example. Preferably, the template is an acrylic plate, and when the acrylic plate is subjected to a first punching treatment, each hole is left with a small machining residue so as to form a porous dome structure later.
Further, the porous dome generation mold is prepared by shielding and controlling the shape of a light spot in the laser drilling process and controlling the scanning path of a non-circular laser light spot to realize the manufacture of a convex structure on the surface of an inner hole of the bottom layer cylinder generation mold, so that the porous dome generation mold comprising the dome structure and the cylinder structure is obtained.
Performing a second punching process on the center of the porous dome forming mold to obtain a first antenna forming mold; the included angle between the central axis of the first antenna generating mold and the horizontal plane of the template is 90 degrees.
Performing second punching treatment on the periphery of the porous dome generating mold for multiple times to obtain a plurality of second antenna generating molds so as to obtain a flexible piezoresistive multilayer structure part generating mold; and the included angles between the central axes of the second antenna generating molds and the horizontal plane of the template are all 45 degrees.
In this embodiment, the performing a second punching process on the periphery of the porous dome forming mold multiple times to obtain a plurality of second antenna forming molds, so as to obtain a flexible piezoresistive multilayer structural component forming mold specifically includes: placing the porous dome generating mold at an angle of 45 degrees with the horizontal direction, adjusting the focal length of a laser processing device, and performing second punching treatment on the periphery of the porous dome generating mold; rotating the processed porous dome generating mold clockwise by 90 degrees along the horizontal direction, adjusting the focal length of the laser processing device again, and performing second punching treatment on the periphery of the generating mold; placing the processed generation die by clockwise rotating by 90 degrees along the horizontal direction again, adjusting the focal length of the laser processing device, and performing third-time second punching processing on the periphery of the generation die; and (3) placing the processed generation die by clockwise rotating for 90 degrees along the horizontal direction for the third time, adjusting the focal length of a laser processing device, and performing second punching processing for the fourth time on the periphery of the generation die to finally obtain the flexible piezoresistive multilayer structure part generation die.
Preferably, the hole punching aperture of the first hole punching process is 1 mm, the hole punching aperture of the second hole punching process is 0.08 mm, and the hole punching depth of the second hole punching process is greater than the hole punching depth of the first hole punching process.
Step 102: preparing a piezoresistive composite material; the piezoresistive composite material is used for manufacturing a flexible piezoresistive multilayer structure component;
the preparation method of the piezoresistive composite material specifically comprises the following steps:
mixing and stirring the multi-walled carbon nano-tube with a dispersant and absolute ethyl alcohol to obtain a first mixture.
The method comprises the following steps of mixing and stirring the multi-walled carbon nanotube, a dispersing agent and absolute ethyl alcohol to obtain a first mixture, and specifically comprises the following steps: uniformly mixing a multi-walled carbon nanotube and a dispersing agent in a mass ratio of 10:1, adding absolute ethyl alcohol, and mixing and stirring to obtain a first mixture; wherein the mass ratio of the multi-walled carbon nano-tube to the absolute ethyl alcohol is 1: 60. Further, placing the multi-walled carbon nano-tube and the dispersing agent in a small beaker, adding absolute ethyl alcohol, sealing the opening by using tin foil paper, placing the opening in a magnetic stirrer, and stirring for 5-6 hours to obtain a first mixture. Specifically, a mass of 1.6 g of multi-walled carbon nanotubes was prepared, a mass of 0.16 g of the required dispersant, and a mass of 96 g of absolute ethanol.
In order to avoid the agglomeration phenomenon of the multi-wall carbon nano tubes, carrying out ultrasonic treatment on the first mixture; specifically, the ultrasonic cleaning time is half an hour to ensure that the multi-walled carbon nanotubes are completely dispersed, the temperature in the ultrasonic treatment process cannot be overheated, and water is flush with the liquid level.
Adding a polydimethylsiloxane matrix component into the first mixture, and mixing and stirring to obtain a second mixture;
in this embodiment, the adding a polydimethylsiloxane matrix component to the first mixture, and mixing and stirring to obtain a second mixture specifically includes: the polydimethylsiloxane matrix component was added to the first mixture, sealed with foil paper, and stirred continuously for 24 hours to obtain a second mixture. Further, in order to ensure that a part of the multi-walled carbon nanotubes are exposed on the outer surface of the flexible piezoresistive composite material after the obtained multi-walled carbon nanotube/polydimethylsiloxane flexible piezoresistive composite material is cured and a conductive path capable of changing the resistance value of the sensor is obtained in the compression process, the mass fraction of the multi-walled carbon nanotubes is 8% of that of the polydimethylsiloxane matrix material, the mass ratio of the polydimethylsiloxane matrix component to the multi-walled carbon nanotubes is 20:1.6, and the mass of the polydimethylsiloxane matrix component added into the first mixture is 20 g.
Stirring the second mixture until the absolute ethyl alcohol is completely volatilized, adding a polydimethylsiloxane curing agent component into the second mixture, and mixing and stirring to obtain the piezoresistive composite material; and specifically, heating and stirring the second mixture at 60 ℃ for 2-3 days to completely volatilize the absolute ethyl alcohol, adding the polydimethylsiloxane curing agent component, and uniformly stirring to obtain the piezoresistive composite material. The mass ratio of the polydimethylsiloxane curing agent component to the polydimethylsiloxane matrix component is 1:10, namely 2 g of the polydimethylsiloxane curing agent component is added.
Specifically, the polydimethylsiloxane matrix component refers to polydimethylsiloxane per se, no other substances are added, the polydimethylsiloxane per se is a colloid-like object, and the polydimethylsiloxane curing agent component refers to a curing agent.
Step 103: after the piezoresistive composite material is paved into the flexible piezoresistive multilayer structure component generation mold, vacuum heating treatment is carried out to obtain a first flexible piezoresistive multilayer structure component, and the method specifically comprises the following steps: uniformly paving the mixed material into the flexible piezoresistive multilayer structure component generating mold, then carrying out vacuum pumping, exhausting and heating curing treatment, and removing the flexible composite material from the flexible piezoresistive multilayer structure component generating mold after curing to obtain a first flexible piezoresistive multilayer structure component; specifically, the flexible piezoresistive multilayer structure part generation mold paved with the mixed material is placed in a vacuum drying oven for vacuumization and exhaust treatment for 1 hour, then is placed in an oven for heating and curing at the temperature of 120 ℃ for 30 minutes, and the first flexible piezoresistive multilayer structure part is obtained after being removed from the generation mold.
Step 104: after the piezoresistive composite material is paved into the flexible piezoresistive multilayer structure component generation mold, vacuum heating treatment is carried out again to obtain a second flexible piezoresistive multilayer structure component, and the method specifically comprises the following steps: uniformly paving the mixed material into the flexible piezoresistive multilayer structure part generating mold again, and then carrying out vacuum pumping, exhaust and heating curing treatment on the flexible piezoresistive multilayer structure part generating mold paved with the mixed material to obtain a second flexible piezoresistive multilayer structure part; specifically, the flexible piezoresistive multilayer structure part generation mold paved with the mixed material is placed in a vacuum drying oven for vacuumization and exhaust treatment for 1 hour, and then is placed in an oven for heating and curing at the temperature of 120 ℃ for 30 minutes, so that the second flexible piezoresistive multilayer structure part is obtained.
Step 105: assembling the first flexible piezoresistive multilayer structure component and the second flexible piezoresistive multilayer structure component to obtain the flexible piezoresistive sensor with a multilayer structure, which specifically comprises: the first flexible piezoresistive multilayer structural component and the second flexible piezoresistive multilayer structural component are placed one on top of the other, and the first antenna structure 4 of the first flexible piezoresistive multilayer structural component is in point contact with the second antenna structure 8 of the second flexible piezoresistive multilayer structural component.
Coating silver adhesive on one surface of the first flexible piezoresistive multilayer structure component without the antenna structure, and leading out a first electrode; and coating silver glue on one surface of the second flexible piezoresistive multilayer structure component without the antenna structure, and leading out a second electrode.
And respectively coating insulating coatings on the silver colloid of the first flexible piezoresistive multilayer structure component and the silver colloid of the second flexible piezoresistive multilayer structure component, and then carrying out packaging process to obtain the flexible piezoresistive sensor with the multilayer structure.
The flexible piezoresistive sensor is provided with a multilayer structure comprising a flexible piezoresistive planar substrate layer, an antenna structure and a porous dome structure, wherein the sensitivity of a flexible piezoresistive material to a fine load is improved through the bendable antenna structure, and the problem of narrow sensing range of the flexible piezoresistive sensor is solved by using the porous dome structure comprising an upper end dome structure and a lower end cylindrical structure. Specifically, when the piezoresistive pressure sensor is compressed by a slight load, the change of the contact area caused by the bending deformation of the flexible antenna structure can cause the resistance value of the piezoresistive pressure sensor to change, so that the piezoresistive pressure sensor can be used for sensing the slight stress change; when the pressure sensor is subjected to a medium compression load, the domes of the porous dome structures are contacted, and the resistance value change of the piezoresistive sensor, caused by the contact area change of the porous dome structures in the compression process, can be used for sensing the change of medium-range stress; when subjected to a significant degree of loading, the column of porous dome structures is compressed and can experience a wide range of stress variations.
Compared with the prior art, the invention has the following advantages:
(1) from the aspect of performance optimization, the invention provides a flexible piezoresistive material with a multilayer structure prepared by using a simple laser processing method and a low-cost multi-wall carbon nano tube/polydimethylsiloxane composite material, and the high-sensitivity wide-range mechanical sensing function of an electromechanical response mechanical sensor is realized. The flexible piezoresistive sensor with the multilayer structure provided by the invention not only solves the problem that other mechanical sensors with electromechanical response cannot have the capacity of hypersensitive sensing performance and wide sensing range, but also the spatial distribution of the multilayer structure processed by the laser can be freely selected according to the original design drawing, and the free adjustment of the high sensitivity of electromechanical response and the mechanical sensing range can be realized.
(2) From the structural characteristic point of view, compared with the traditional single structure, the invention provides a more novel method for synchronously improving the induction performance and the induction range capacity, namely a layered structure. The porous dome structure and the fine antenna structure can sense more fine stress change; meanwhile, the sensor has a multilayer structure, can sense the load change in multiple ranges, and has wider and more practical application compared with the traditional sensor.
(3) From the manufacturing cost perspective, the mechanical sensor has high strain sensitivity coefficient to fine load and sensing capability to wide-range load, and meanwhile, the simple laser processing method and the low material cost enable the cost performance of the mechanical sensor to have magnitude advantages compared with other traditional mechanical sensors.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (10)
1. A flexible piezoresistive sensor having a multilayer structure, wherein the flexible piezoresistive sensor having a multilayer structure comprises two identical flexible piezoresistive multilayer structure components, namely a first flexible piezoresistive multilayer structure component and a second flexible piezoresistive multilayer structure component;
the first flexible piezoresistive multilayer structure component comprises a first flexible piezoresistive planar base layer, a first antenna structure and a first porous dome structure; the upper surface of the first flexible piezoresistive planar substrate layer is connected with a first electrode, and the lower surface of the first flexible piezoresistive planar substrate layer is sequentially connected with the first porous dome structure and the first antenna structure;
the second flexible piezoresistive multilayer structural component comprises a second flexible piezoresistive planar base layer, a second antenna structure and a second porous dome structure; the upper surface of the second flexible piezoresistive planar substrate layer is connected with a second electrode, and the lower surface of the second flexible piezoresistive planar substrate layer is sequentially connected with the second porous dome structure and the second antenna structure;
the first antenna structure is in contact with the second antenna structure.
2. The flexible piezoresistive sensor having a multilayer structure according to claim 1, wherein the first antenna structure is identical to the second antenna structure; the first antenna structure comprises a plurality of antennas; wherein one of the antennae is located at the center of the first porous dome structure and the other antennae are evenly distributed around the first porous dome structure.
3. The flexible piezoresistive sensor having a multilayer structure according to claim 2, wherein the antenna located at the center of the first porous dome structure is at an angle of 90 ° to the horizontal plane of the first porous dome structure; the included angles between the antennae located on the periphery of the first porous dome structure and the horizontal plane of the first porous dome structure are both 45 degrees.
4. The flexible piezoresistive sensor having a multilayer structure according to claim 1, wherein said first antenna structure comprises five antennas.
5. The flexible piezoresistive sensor having a multilayer structure according to claim 1, wherein the first porous dome structure is identical to the second porous dome structure; the first porous dome structure comprises a first dome structure and a first cylindrical structure which are arranged up and down, the first dome structure is connected with the first antenna structure, and the first cylindrical structure is connected with the first flexible piezoresistive planar substrate layer.
6. A method for preparing a flexible piezoresistive sensor with a multilayer structure is characterized in that the method for preparing the flexible piezoresistive sensor with the multilayer structure comprises the following steps:
processing the template according to the multilayer structure form to obtain a flexible piezoresistive multilayer structure part generating mold;
preparing a piezoresistive composite material; the piezoresistive composite material is used for manufacturing a flexible piezoresistive multilayer structure component;
paving the piezoresistive composite material into the flexible piezoresistive multilayer structure component generating mold, and then carrying out vacuum heating treatment to obtain a first flexible piezoresistive multilayer structure component;
paving the piezoresistive composite material into the flexible piezoresistive multilayer structure component generating mold, and then performing vacuum heating treatment again to obtain a second flexible piezoresistive multilayer structure component;
and assembling the first flexible piezoresistive multilayer structure component and the second flexible piezoresistive multilayer structure component to obtain the flexible piezoresistive sensor with a multilayer structure.
7. The method for manufacturing a flexible piezoresistive sensor having a multilayer structure according to claim 6, wherein the processing of the template to obtain the flexible piezoresistive multilayer structure part creation mold according to the form of the multilayer structure comprises:
performing first hole punching treatment on the template to obtain a porous dome generating mold;
performing a second punching process on the center of the porous dome forming mold to obtain a first antenna forming mold; the included angle between the central axis of the first antenna generating mold and the horizontal plane of the template is 90 degrees;
performing second punching treatment on the periphery of the porous dome generating mold for multiple times to obtain a plurality of second antenna generating molds so as to obtain a flexible piezoresistive multilayer structure part generating mold; and the included angles between the central axes of the second antenna generating molds and the horizontal plane of the template are all 45 degrees.
8. The method of claim 7, wherein the first perforation process has a perforation aperture of 1 mm, the second perforation process has a perforation aperture of 0.08 mm, and the second perforation process has a perforation depth greater than the first perforation process.
9. The method for manufacturing a flexible piezoresistive sensor with a multilayer structure according to claim 6, wherein the manufacturing of piezoresistive composite material specifically comprises:
mixing and stirring a multi-walled carbon nanotube, a dispersing agent and absolute ethyl alcohol to obtain a first mixture;
sonicating the first mixture;
adding a polydimethylsiloxane matrix component into the first mixture, and mixing and stirring to obtain a second mixture;
and stirring the second mixture until the absolute ethyl alcohol is completely volatilized, adding a polydimethylsiloxane curing agent component into the second mixture, and mixing and stirring to obtain the piezoresistive composite material.
10. The method for manufacturing a flexible piezoresistive sensor having a multilayer structure according to claim 6, wherein the assembling the first flexible piezoresistive multilayer structure component and the second flexible piezoresistive multilayer structure component to obtain the flexible piezoresistive sensor having a multilayer structure comprises:
placing the first flexible piezoresistive multi-layer structural component and the second flexible piezoresistive multi-layer structural component one above the other with the first antenna structure of the first flexible piezoresistive multi-layer structural component in contact with the second antenna structure of the second flexible piezoresistive multi-layer structural component;
coating silver adhesive on one surface of the first flexible piezoresistive multilayer structure component without the antenna structure, and leading out a first electrode;
coating silver glue on one surface of the second flexible piezoresistive multilayer structure component without the antenna structure, and leading out a second electrode;
and respectively coating insulating coatings on the silver colloid of the first flexible piezoresistive multilayer structure component and the silver colloid of the second flexible piezoresistive multilayer structure component, and then carrying out packaging process to obtain the flexible piezoresistive sensor with the multilayer structure.
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