CN113078265B - CMOS image sensor and manufacturing method thereof - Google Patents
CMOS image sensor and manufacturing method thereof Download PDFInfo
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- CN113078265B CN113078265B CN202110327423.4A CN202110327423A CN113078265B CN 113078265 B CN113078265 B CN 113078265B CN 202110327423 A CN202110327423 A CN 202110327423A CN 113078265 B CN113078265 B CN 113078265B
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- G—PHYSICS
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Abstract
The invention provides a CMOS image sensor and a manufacturing method thereof, wherein a metal filter layer is formed, a plurality of filtering holes penetrating through the metal filter layer in the vertical direction are formed, then an isolation dielectric layer is formed on the side wall of each filtering hole, and a sandwich structure of bottom transparent electrode-photosensitive layer-top transparent electrode is formed in each filtering hole. The invention adopts the metal filter layer with the filter holes to selectively transmit light with corresponding wavelength, and adopts the photosensitive layer to carry out photosensitive on the light waves which pass through the filter holes so as to generate photoelectric signals, and finally, the photoelectric signals are read out through the reading circuit. The photosensitive layer can comprise organic photosensitive materials such as fullerene derivatives, the degree of freedom of adjustment of the photosensitive range is high, and the metal filter layer is very thin, and the fullerene photosensitive layer has good photosensitive characteristics under the very thin thickness, so that the pixel density and the resolution of visible light of the CMOS image sensor can be extremely high, and an organic color filter plate is not needed, so that the pixel density can be further improved.
Description
Technical Field
The invention belongs to the technical field of optics, and relates to a CMOS image sensor and a manufacturing method thereof.
Background
A conventional color CMOS Image Sensor (CIS) based on Bayer filters has different filter plates on top of light sensing units of different colors, and the light sensing units are photodiodes. With the increasing requirements of imaging resolution, the area of the photodiode in the CIS is made smaller. However, the photosensitivity and the full-well capacity of the photodiode deteriorate as their area becomes smaller, and therefore the reduction in pixel (pixel) size is limited; meanwhile, the filter plate on the top of the photosensitive unit further limits the reduction of the pixel size.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention provides a CMOS image sensor and a method for fabricating the same, which can solve the problem that the conventional photodiode is difficult to be further reduced in size.
To achieve the above and other related objects, the present invention provides a method for fabricating a CMOS image sensor, comprising:
forming a metal filter layer;
forming a plurality of filter holes in the metal filter layer, the filter holes penetrating the metal filter layer in a vertical direction;
forming an isolation medium layer on the side wall of the light filtering hole;
and sequentially forming a bottom transparent electrode, a photosensitive layer and a top transparent electrode in the light filtering hole.
Optionally, a plurality of the filter holes are arranged periodically.
Optionally, the plurality of filter holes include a plurality of first filter holes, a plurality of second filter holes, and a plurality of third filter holes, and the first filter holes, the second filter holes, and the third filter holes have different apertures.
Optionally, the first filter hole is configured to transmit red light, the second filter hole is configured to transmit green light, and the third filter hole is configured to transmit blue light.
Optionally, the plurality of light filtering holes are arranged in a bayer array or a honeycomb array.
Optionally, the photosensitive layer comprises an organic photosensitive material.
Optionally, the organic photosensitive material comprises a fullerene derivative.
Optionally, a thickness of the photosensitive layer is in a range of 50-100nm, and a thickness of the metal filter layer is in a range of 70-120nm.
Optionally, the method further includes the steps of providing a substrate, and forming a readout circuitry and an interconnection layer, wherein the readout circuitry is located in the substrate, and the interconnection layer is located between the substrate and the metal filter layer to electrically connect the readout circuitry and the bottom transparent electrode.
The present invention also provides a CMOS image sensor including:
a metal filter layer;
the metal filter layer is provided with a plurality of metal filter holes, and the metal filter layer is provided with a plurality of metal filter holes;
the isolation medium layer is positioned on the side wall of the light filtering hole;
and the sandwich structure is positioned in the light filtering hole and sequentially comprises a bottom transparent electrode, a photosensitive layer and a top transparent electrode from bottom to top.
Optionally, a plurality of the filter holes are arranged periodically.
Optionally, the plurality of filter holes include a plurality of first filter holes, a plurality of second filter holes and a plurality of third filter holes, and the first filter holes, the second filter holes and the third filter holes have different apertures.
Optionally, the first filter hole is configured to transmit red light, the second filter hole is configured to transmit green light, and the third filter hole is configured to transmit blue light.
Optionally, the plurality of light filtering holes are arranged in a bayer array or a honeycomb array.
Optionally, the photosensitive layer comprises an organic photosensitive material.
Optionally, the organic photosensitive material comprises a fullerene derivative.
Optionally, a thickness of the photosensitive layer is in a range of 50-100nm, and a thickness of the metal filter layer is in a range of 70-120nm.
Optionally, the CMOS image sensor further comprises a readout circuit located in a substrate and an interconnection layer located between the substrate and the metal filter layer to electrically connect the readout circuit and the bottom transparent electrode.
As described above, the method for fabricating a CMOS image sensor according to the present invention forms a metal filter layer, forms a plurality of filtering holes penetrating the metal filter layer in a vertical direction, forms an isolation dielectric layer on sidewalls of the filtering holes, and forms a bottom transparent electrode-photosensitive layer-top transparent electrode sandwich structure in the filtering holes. The invention adopts the metal filter layer with the filter hole to selectively transmit light with corresponding wavelength, and adopts the photosensitive layer to carry out photosensitive on the light wave passing through the filter hole so as to generate a photoelectric signal, and finally, the photoelectric signal is read out through the reading circuit. The photosensitive layer can be made of organic photosensitive material such as fullerene derivative. The invention can realize the adjustment of the photosensitive range of the photosensitive layer by changing the functional group of the fullerene derivative in the photosensitive layer, and has higher degree of freedom. The size of the metal filter layer can be in a submicron level, and meanwhile, the fullerene photosensitive layer has good photosensitive characteristics in the submicron level, so that the pixel density of the CMOS image sensor can be extremely high, and the resolution of visible light can be extremely high. In addition, the invention can avoid using organic color filter plate, to improve the pixel density of CMOS image sensor.
Drawings
Fig. 1 is a process flow chart of a method for fabricating a CMOS image sensor according to the present invention.
Fig. 2 is a schematic view showing a substrate provided for a method of fabricating a CMOS image sensor according to the present invention.
Fig. 3 is a schematic diagram illustrating a method for fabricating a CMOS image sensor according to the present invention, in which a readout circuit is formed in a substrate and an interconnection layer is formed on the substrate.
Fig. 4 is a schematic diagram illustrating a metal filter layer formed on the interconnection layer according to the method for fabricating a CMOS image sensor of the present invention.
Fig. 5 is a schematic diagram illustrating a method for manufacturing a CMOS image sensor according to the invention, in which a plurality of filter holes are formed in the metal filter layer.
Fig. 6 is a schematic diagram showing a plurality of the filter holes arranged in a bayer array.
Fig. 7 is a schematic diagram showing a plurality of the filter holes arranged in a honeycomb array.
Fig. 8 is a schematic diagram illustrating a method for fabricating a CMOS image sensor according to the present invention, in which an isolation dielectric layer is formed on a sidewall of the light-filtering hole.
Fig. 9 is a schematic diagram illustrating a method for fabricating a CMOS image sensor according to the present invention, in which a bottom transparent electrode is formed at the bottom of the light-filtering hole.
Fig. 10 is a schematic view illustrating a photosensitive layer formed on the bottom transparent electrode according to the method for fabricating a CMOS image sensor of the present invention.
Fig. 11 is a schematic diagram illustrating a method for fabricating a CMOS image sensor according to the present invention, in which a top transparent electrode is formed on the photosensitive layer.
Description of the element reference numerals
S1 to S4
1. Substrate
2. Readout circuit
3. Dielectric layer
4. Interconnection line
5. Metal filter layer
6. First light filtering hole
7. Second light filtering hole
8. Third filtering hole
9. Isolation dielectric layer
10. Bottom transparent electrode
11. Photosensitive layer
12. Top transparent electrode
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 11. It should be noted that the drawings provided in this embodiment are only for schematically illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings and not drawn according to the number, shape and size of the components in actual implementation, and the form, quantity and proportion of each component in actual implementation may be arbitrarily changed, and the component layout may be more complicated.
Example one
Referring to fig. 1, a process flow diagram of a CMOS image sensor manufacturing method is shown, which includes the following steps:
s1: forming a metal filter layer;
s2: forming a plurality of filtering holes in the metal filtering layer, wherein the filtering holes penetrate through the metal filtering layer in the vertical direction;
s3: forming an isolation medium layer on the side wall of the light filtering hole;
s4: and sequentially forming a bottom transparent electrode, a photosensitive layer and a top transparent electrode in the light filtering hole.
Referring to fig. 2 to 4, the step S1 is executed: and forming a metal filter layer.
Specifically, as shown in fig. 2, a substrate 1 is provided. The substrate 1 may be a silicon substrate, a germanium substrate, a silicon-on-insulator substrate, a III-V compound substrate, or other suitable semiconductor substrate, which may be P-type doped or N-type doped.
As shown in fig. 3, in the present embodiment, a readout circuit 2 is formed in the substrate 1 by using a CMOS process, and an interconnection layer is formed on the substrate 1.
As an example, the active region of the readout circuitry 2 may be formed in the substrate 1 by ion implantation. The interconnection layer comprises a dielectric layer 3 and interconnection lines 4 positioned in the dielectric layer 3. The dielectric layer 3 includes, but is not limited to, an insulating material such as silicon oxide, silicon nitride, etc., and the interconnection line 4 includes, but is not limited to, a conductive metal such as Cu, W, etc. The interconnect lines 4 may be formed by a suitable process such as sputtering, plating, etching, etc., and the interconnect layer may include one or more layers of the interconnect lines 4.
As shown in fig. 4, a metal filter layer 5 is formed on the interconnection layer by sputtering, electroplating or other suitable processes.
As an example, the material of the metal filter layer 5 may include one or more of copper, aluminum, tungsten, nickel, titanium, or other suitable metal materials; the thickness of the metal filter layer 5 is in the range of 70-120nm.
Referring to fig. 5, the step S2 is executed: a plurality of filter holes are formed in the metal filter layer 5 by using suitable processes such as photolithography and etching, and the filter holes penetrate through the metal filter layer 5 in the vertical direction.
By way of example, the plurality of filter holes are arranged periodically, and the opening shape of the filter holes includes, but is not limited to, a circle.
As an example, the plurality of filter holes include a plurality of first filter holes 6, a plurality of second filter holes 7, and a plurality of third filter holes 8, and the first filter holes 6, the second filter holes 7, and the third filter holes 8 have different apertures from each other to selectively transmit light of different wavelengths.
It should be noted that the larger the aperture (e.g. diameter) of the filter hole, the longer the wavelength of light that can be transmitted through the filter hole; at the same time, the distance between the filters also affects the wavelength of the transmitted light.
In this embodiment, the first filter hole 6 is used for transmitting red light, the second filter hole 7 is used for transmitting green light, and the third filter hole 8 is used for transmitting blue light.
By way of example, the plurality of filter holes may be arranged in a bayer array as shown in fig. 6, in a honeycomb array as shown in fig. 7, or in other suitable arrays, and the scope of the present invention should not be limited excessively herein.
Referring to fig. 8, the step S3 is executed: an isolation dielectric layer 9 is formed on the sidewall of the light filtering hole by using a chemical vapor deposition method, a physical vapor deposition method or other suitable methods, and the isolation dielectric layer 9 includes, but is not limited to, silicon oxide, silicon nitride, aluminum oxide or other suitable insulating materials. In this embodiment, the isolation dielectric layer 9 further covers the upper surface of the metal filter layer 5.
Referring to fig. 9 to 11, step S4 is executed: and sequentially forming a bottom transparent electrode 10, a photosensitive layer 11 and a top transparent electrode 12 in the light filtering hole, wherein a sandwich structure consisting of the bottom transparent electrode 10, the photosensitive layer 11 and the top transparent electrode 12 is isolated from the metal light filtering layer 5 through the isolation dielectric layer 9.
Specifically, as shown in fig. 9, a bottom transparent electrode 10 is formed at the bottom of the light filtering hole by magnetron sputtering or other suitable methods, and the bottom transparent electrode 10 is electrically connected to the readout circuit through the interconnection layer. The bottom transparent electrode 10 is made of, but not limited to, indium Tin Oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), fluorine-doped tin oxide (FTO), or other suitable transparent electrode materials.
As shown in fig. 10, a photosensitive layer 11 is formed on the bottom transparent electrode 10.
By way of example, the photosensitive layer 11 may include an organic photosensitive material, such as a fullerene derivative or other suitable photosensitive organic material. In this embodiment, the photosensitive layer 11 preferably includes a fullerene derivative, which is an organic material that can effectively sense light even in a small size, and selectively absorb light of different wavelengths and generate photocurrent by changing the functional group attached thereto.
As an example, one molecular structure of the fullerene derivative is shown as follows, wherein Cy represents a cyclic carbohydrate, X represents a branched alkyl group, and R1, R2, R3, R4, R5, R6, R7, and R8 each represents one of a hydrogen atom, a halogen atom, a hydroxyl group, an alkoxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazine group, a hydrazone group, a carbonyl group, a carbamoyl group, a thiol group, an ester group, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a silyl group, a C1-C20 alkyl group, a C2-C20 alkenyl group, a C2-C20 alkynyl group, a C6-C30 aryl group, a C7-C30 aralkyl group, a C1-C30 alkoxy group, a C1-C20 heteroalkyl group, a C3-C20 heteroaryl group, a C3-C20 heteroaralkyl group, a C3-C30 cycloalkyl group, a C3-C15 cycloalkenyl group, a C6-C15 cycloalkynyl group, a C3-C30 heterocycloalkyl group, or a combination of at least two thereof. Of course, in other embodiments, the molecular structure of the fullerene derivative may be in other forms as long as effective sensitization can be achieved, and the scope of the present invention should not be limited excessively herein.
Specifically, the fullerene derivative has a high degree of freedom in adjusting the range of photosensitivity of the molecule thereof via a functional group. In this embodiment, for the fullerene derivative in different filter holes, the photosensitive wavelength may be the wavelength selectively transmitted by the filter hole, or may be the full visible light spectrum range.
Specifically, a solution containing a fullerene derivative may be coated on the surface of the bottom transparent electrode 10 and dried to obtain the fullerene photosensitive layer 11.
As an example, the photosensitive layer 11 has a thickness in the range of 50 to 100nm.
As shown in fig. 11, a top transparent electrode 12 is formed on the photosensitive layer 11 by magnetron sputtering or other suitable methods. The material of the top transparent electrode 12 includes, but is not limited to, indium Tin Oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), fluorine-doped tin dioxide (FTO), or other suitable transparent electrode materials.
The manufacturing method of the CMOS image sensor of the embodiment can firstly complete the manufacturing of the silicon-based readout circuit, then manufacture the metal filter layer on the surface, and finally manufacture the transparent electrode-photosensitive layer-transparent electrode sandwich structure in the metal filter hole; because the size of the metal filter layer is in a submicron level, and the photosensitive layer has good photosensitive characteristics in the submicron level, the pixel density of the CMOS image sensor can be extremely high, and the resolution of visible light can be extremely high. In addition, the invention adopts the photosensitive layer, so that the organic color filter plate can be removed, and the pixel density can be further extremely high.
Example two
In the present embodiment, a CMOS image sensor is provided, please refer to fig. 11, which shows a schematic cross-sectional structure diagram of the CMOS image sensor, including: the structure comprises a metal filter layer 5, a plurality of filter holes, an isolation medium layer 9 and a sandwich structure, wherein the filter holes are positioned in the metal filter layer 5 and penetrate through the metal filter layer 5 in the vertical direction; the isolation medium layer 9 is positioned on the side wall of the light filtering hole; the sandwich structure is positioned in the light filtering hole and sequentially comprises a bottom transparent electrode 10, a photosensitive layer 11 and a top transparent electrode 12 from bottom to top.
Specifically, the material of the metal filter layer 5 may include one or more of copper, aluminum, tungsten, nickel, titanium, or other suitable metal materials; the thickness of the metal filter layer 5 is in the range of 70-120nm.
Specifically, the plurality of filter holes are arranged periodically, and the opening shape of the filter holes includes, but is not limited to, a circle. In this embodiment, the plurality of filter holes include a plurality of first filter holes 6, a plurality of second filter holes 7, and a plurality of third filter holes 8, and the first filter holes 6, the second filter holes 7, and the third filter holes 8 have different apertures to selectively transmit light with different wavelengths. Wherein, the larger the aperture (e.g. diameter) of the filter hole, the longer the wavelength that can transmit light; at the same time, the distance between the filters also affects the wavelength of the light that is transmitted. In this embodiment, the first filter hole 6 is used for transmitting red light, the second filter hole 7 is used for transmitting green light, and the third filter hole 8 is used for transmitting blue light. The plurality of filter holes may be arranged in a bayer array as shown in fig. 6, may be arranged in a honeycomb array as shown in fig. 7, and may be arranged in other suitable arrays, which should not unduly limit the scope of the present invention.
Specifically, the isolation dielectric layer 9 is used for isolating the metal filter layer 5 from the sandwich structure, and the isolation dielectric layer 9 is made of, but not limited to, silicon oxide, silicon nitride, aluminum oxide, or other suitable insulating materials. In this embodiment, the isolation dielectric layer 9 further covers the upper surface of the metal filter layer 5.
Specifically, in the sandwich structure, the bottom transparent electrode 10 and the top transparent electrode 12 are made of materials including, but not limited to, indium Tin Oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), fluorine-doped tin oxide (FTO), or other suitable transparent electrode materials. The photosensitive layer 11 may include an organic photosensitive material such as a fullerene derivative or other suitable photosensitive organic material. In this embodiment, the photosensitive layer 11 preferably includes a fullerene derivative, which is an organic material that can effectively sense light even in a small size, and selectively absorb light of different wavelengths and generate photocurrent by changing the functional group attached thereto. The fullerene derivative has a high degree of freedom in adjusting the photosensitive range of the molecule thereof through a functional group. In this embodiment, for the fullerene derivative in different filter holes, the photosensitive wavelength may be the wavelength selectively transmitted by the filter hole, or may be the full visible spectrum range. The photosensitive layer 11 has a thickness ranging from 50 to 100nm.
Specifically, the CMOS image sensor further includes a readout circuit 2 and an interconnection layer, the readout circuit 2 is located in a substrate 1, and the interconnection layer is located between the substrate 1 and the metal filter layer 5 to electrically connect the readout circuit 2 and the bottom transparent electrode 10. The substrate 1 may be a silicon substrate, a germanium substrate, a silicon-on-insulator substrate, a III-V compound substrate, or other suitable semiconductor substrate, which may be P-type doped or N-type doped. The interconnection layer comprises a dielectric layer 3 and interconnection lines 4 positioned in the dielectric layer 3. The dielectric layer 3 includes, but is not limited to, an insulating material such as silicon oxide, silicon nitride, etc., and the interconnection line 4 includes, but is not limited to, a conductive metal such as Cu, W, etc. The interconnect layer may comprise one or more layers of the interconnect lines 4.
In summary, the method for fabricating a CMOS image sensor of the present invention forms a metal filter layer, forms a plurality of filtering holes penetrating through the metal filter layer in a vertical direction, then forms an isolation dielectric layer on sidewalls of the filtering holes, and forms a bottom transparent electrode-photosensitive layer-top transparent electrode sandwich structure in the filtering holes. The invention adopts the metal filter layer with the filter hole to selectively transmit light with corresponding wavelength, and adopts the photosensitive layer to carry out photosensitive on the light wave passing through the filter hole so as to generate a photoelectric signal, and finally, the photoelectric signal is read out through the reading circuit. The photosensitive layer can be made of organic photosensitive material such as fullerene derivative. The invention can realize the adjustment of the photosensitive range of the photosensitive layer by changing the functional group of the fullerene derivative in the photosensitive layer, and has higher degree of freedom. Because the size of the metal filter layer can be in a submicron level, and meanwhile, the fullerene photosensitive film has good photosensitive characteristics in the submicron level, the pixel density of the CMOS image sensor can be extremely high, and the resolution of visible light can be extremely high. In addition, the invention can avoid using organic color filter plate, to improve the pixel density of CMOS image sensor. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Those skilled in the art can modify or change the above-described embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (18)
1. A method for manufacturing a CMOS image sensor is characterized by comprising the following steps:
forming a metal filter layer;
forming a plurality of filter holes in the metal filter layer, the filter holes penetrating the metal filter layer in a vertical direction;
forming an isolation medium layer on the side wall of the light filtering hole;
and sequentially forming a bottom transparent electrode, a photosensitive layer and a top transparent electrode in the light filtering hole.
2. The method for manufacturing a CMOS image sensor according to claim 1, wherein: the plurality of the light filtering holes are arranged periodically.
3. The method of fabricating a CMOS image sensor according to claim 1, wherein: the plurality of filtering holes comprise a plurality of first filtering holes, a plurality of second filtering holes and a plurality of third filtering holes, and the diameters of the first filtering holes, the second filtering holes and the third filtering holes are different from each other.
4. The method for manufacturing a CMOS image sensor according to claim 3, wherein: the first filtering hole is used for transmitting red light, the second filtering hole is used for transmitting green light, and the third filtering hole is used for transmitting blue light.
5. The method for manufacturing a CMOS image sensor according to claim 3, wherein: the plurality of light filtering holes are arranged in a Bayer array or honeycomb array.
6. The method for manufacturing a CMOS image sensor according to claim 1, wherein: the photosensitive layer includes an organic photosensitive material.
7. The method for manufacturing a CMOS image sensor according to claim 6, wherein: the organic photosensitive material includes a fullerene derivative.
8. The method of fabricating a CMOS image sensor according to claim 1, wherein: the thickness range of the photosensitive layer is 50-100nm, and the thickness range of the metal filter layer is 70-120nm.
9. The method of fabricating a CMOS image sensor according to claim 1, wherein: the method further comprises the steps of providing a substrate, and forming a readout circuit and an interconnection layer, wherein the readout circuit is located in the substrate, and the interconnection layer is located between the substrate and the metal filter layer to electrically connect the readout circuit and the bottom transparent electrode.
10. A CMOS image sensor, comprising:
a metal filter layer;
the metal filter layer is provided with a plurality of metal filter holes, and the metal filter layer is provided with a plurality of metal filter holes;
the isolation medium layer is positioned on the side wall of the light filtering hole;
and the sandwich structure is positioned in the light filtering hole and sequentially comprises a bottom transparent electrode, a photosensitive layer and a top transparent electrode from bottom to top.
11. The CMOS image sensor of claim 10, wherein: the plurality of light filtering holes are arranged periodically.
12. The CMOS image sensor of claim 10, wherein: the plurality of filtering holes comprise a plurality of first filtering holes, a plurality of second filtering holes and a plurality of third filtering holes, and the aperture of each of the first filtering holes, the aperture of each of the second filtering holes and the aperture of each of the third filtering holes are different from each other.
13. The CMOS image sensor of claim 12, wherein: the first filtering hole is used for transmitting red light, the second filtering hole is used for transmitting green light, and the third filtering hole is used for transmitting blue light.
14. The CMOS image sensor of claim 12, wherein: the plurality of light filtering holes are arranged in a Bayer array or a honeycomb array.
15. The CMOS image sensor of claim 10, wherein: the photosensitive layer includes an organic photosensitive material.
16. The CMOS image sensor of claim 15, wherein: the organic photosensitive material includes a fullerene derivative.
17. The CMOS image sensor of claim 10, wherein: the thickness range of the photosensitive layer is 50-100nm, and the thickness range of the metal filter layer is 70-120nm.
18. The CMOS image sensor of claim 10, wherein: the CMOS image sensor further comprises a readout circuit and an interconnection layer, wherein the readout circuit is located in the substrate, and the interconnection layer is located between the substrate and the metal filter layer to electrically connect the readout circuit and the bottom transparent electrode.
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