CN113078087A - Substrate conveying device suitable for epitaxial furnace - Google Patents

Substrate conveying device suitable for epitaxial furnace Download PDF

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Publication number
CN113078087A
CN113078087A CN202110320187.3A CN202110320187A CN113078087A CN 113078087 A CN113078087 A CN 113078087A CN 202110320187 A CN202110320187 A CN 202110320187A CN 113078087 A CN113078087 A CN 113078087A
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CN
China
Prior art keywords
cantilever
tray
epitaxial furnace
moving rod
release lever
Prior art date
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Pending
Application number
CN202110320187.3A
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Chinese (zh)
Inventor
陈国钦
胡凡
袁祖浩
巴赛
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CETC 48 Research Institute
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CETC 48 Research Institute
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Publication date
Application filed by CETC 48 Research Institute filed Critical CETC 48 Research Institute
Priority to CN202110320187.3A priority Critical patent/CN113078087A/en
Publication of CN113078087A publication Critical patent/CN113078087A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742Mechanical parts of transfer devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02378Silicon carbide
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02529Silicon carbide
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02634Homoepitaxy

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention discloses a substrate conveying device suitable for an epitaxial furnace, which comprises a manipulator, a cantilever and a tray which are sequentially connected, wherein a moving rod and a position sensor matched with the moving rod are arranged on the cantilever along the length direction of the cantilever, a positioning block is arranged on the moving rod, and an elastic reset piece is arranged between the cantilever and the moving rod. The invention has the advantages of simple structure, being beneficial to improving the repeated transmission precision in high-temperature environment, and the like.

Description

Substrate conveying device suitable for epitaxial furnace
Technical Field
The invention relates to epitaxial growth equipment, in particular to a substrate conveying device suitable for an epitaxial furnace.
Background
In the epitaxial technology, the process chamber of the epitaxial furnace is usually in a high-temperature and high-vacuum environment, and in order to ensure the production efficiency and quality of the epitaxial furnace, multiple back-and-forth transfers of epitaxial wafers in the transfer chamber and the process chamber are usually required to be realized in the environment.
In the epitaxial growth, especially the epitaxial growth of the silicon carbide substrate, high vacuum, high temperature and low impurity environment are required, and the temperature of a process chamber is up to over 900 ℃ in the process of loading and unloading. Because the distance between the process cavity and the transfer cavity is far and a larger transfer distance is needed, a longer cantilever is generally needed to increase the stroke of the manipulator, in the prior art, the tray and the cantilever are generally connected by screws, the structure increases the drooping amount of the transfer tail end, and the substrate transfer precision is seriously influenced. In addition, the maintenance period of the silicon carbide epitaxial furnace is short, the maintenance is frequent, and the position of a base for placing a substrate cannot be ensured to be consistent due to the structural reason after each maintenance, so that the repeated conveying precision of a manipulator is difficult to ensure.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides the substrate conveying device which is simple in structure and beneficial to improving the repeated conveying precision and is suitable for the epitaxial furnace.
In order to solve the technical problems, the invention adopts the following technical scheme:
the utility model provides a substrate conveyer suitable for epitaxial furnace, includes consecutive manipulator, cantilever and tray, be equipped with on the cantilever along the carriage release lever that cantilever length direction arranged and with carriage release lever complex position sensor, be equipped with the locating piece on the carriage release lever, the cantilever with be equipped with the elasticity reset piece between the carriage release lever.
As a further improvement of the above technical solution: the elastic reset piece is a spiral spring and is sleeved on the moving rod, a limiting part is arranged on the cantilever, and the elastic reset piece is abutted to the first limiting part.
As a further improvement of the above technical solution: the movable rod is located between the position sensor and the tray, and the positioning block is arranged at one end, close to the tray, of the movable rod.
As a further improvement of the above technical solution: the cantilever and the tray are of an integrated structure.
As a further improvement of the above technical solution: the cantilever is a titanium alloy cantilever or a quartz cantilever, and the tray is a titanium alloy tray or a quartz tray.
Compared with the prior art, the invention has the advantages that: the invention discloses a substrate conveying device suitable for an epitaxial furnace, wherein a movable rod and a position sensor matched with the movable rod are arranged on a cantilever, a positioning block is arranged on the movable rod, an elastic reset piece is arranged between the cantilever and the movable rod, the positioning block is contacted with the designated position of a process cavity in the substrate conveying process to drive the movable rod to move towards the position sensor, the position sensor is triggered to stop moving, the substrate is conveyed in place at the moment, the elastic reset piece is compressed in the moving process of the movable rod, and the movable rod is driven to reset by the elastic reset piece after the positioning block is separated from the contact, so that the repeated conveying precision of a manipulator is improved.
Drawings
Fig. 1 is a schematic view showing the structure of a substrate transfer apparatus for an epitaxial furnace according to the present invention.
The reference numerals in the figures denote: 1. a manipulator; 2. a cantilever; 21. a limiting part; 3. a tray; 4. a travel bar; 5. a position sensor; 6. positioning blocks; 7. an elastic reset piece.
Detailed Description
The invention is described in further detail below with reference to the figures and specific examples of the specification.
Fig. 1 shows an embodiment of a substrate transfer device for an epitaxial furnace according to the present invention, which includes a robot 1, a cantilever 2, and a tray 3 connected in sequence, wherein the cantilever 2 is provided with a moving rod 4 arranged along a length direction of the cantilever 2 and a position sensor 5 engaged with the moving rod 4, the moving rod 4 is provided with a positioning block 6, and an elastic reset member 7 is provided between the cantilever 2 and the moving rod 4.
In this substrate handling process, locating piece 6 takes place the contact with the process chamber assigned position, drives the motion of movable rod 4 to position sensor 5, and stop motion behind the trigger position sensor 5 indicates that the substrate transports this moment and targets in place, and movable rod 4 is at the removal in-process, and compression elasticity resets 7, breaks away from the contact back at locating piece 6, and elasticity resets 7 and drives movable rod 4 and reset, is favorable to improving manipulator 1's repeated conveying precision. Compared with the scheme of directly adopting the position sensor 5, the invention is additionally provided with the moving rod 4, the positioning block 6 and the elastic reset piece 7 on the basis of the position sensor 5, thereby being more beneficial to ensuring the positioning precision in a high-temperature environment.
Further, in this embodiment, the elastic restoring member 7 is a coil spring and is sleeved on the moving rod 4, the cantilever 2 is provided with a limiting portion 21, and the elastic restoring member 7 abuts against the limiting portion 21. When the movable rod 4 moves, the elastic reset piece 7 moves along with the movable rod 4, the limiting part 21 provides limitation for the elastic reset piece 7, so that the elastic reset piece 7 is compressed, the elastic reset piece 7 generates elastic deformation, and after the positioning block 6 is separated from contact, the elastic reset piece 7 drives the movable rod 4 to reset, and the structure is simple and reliable.
Further, in this embodiment, the moving rod 4 is located between the position sensor 5 and the tray 3, and the positioning block 6 is located at one end of the moving rod 4 close to the tray 3, so that the whole structure is compact, and the layout is reasonable.
In a preferred embodiment, the cantilever 2 and the tray 3 are of an integral structure, which can minimize the sagging amount of the end of the robot 1, and contribute to further improving the substrate transfer accuracy.
In a preferred embodiment, the cantilever 2 is a titanium alloy cantilever or a quartz cantilever, and the tray 3 is a titanium alloy tray or a quartz tray. The quartz or titanium alloy material can resist the high temperature of over 900 ℃, improves the temperature resistance of the device for conveying the substrate, and can be used for epitaxial growth of substrates such as silicon carbide and the like.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make numerous possible variations and modifications to the present invention, or modify equivalent embodiments to equivalent variations, without departing from the scope of the invention, using the teachings disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention should fall within the protection scope of the technical scheme of the present invention, unless the technical spirit of the present invention departs from the content of the technical scheme of the present invention.

Claims (5)

1. The utility model provides a substrate conveyer suitable for epitaxial furnace, includes manipulator (1), cantilever (2) and tray (3) that consecutive, its characterized in that: be equipped with on cantilever (2) along the carriage release lever (4) that cantilever (2) length direction arranged and with carriage release lever (4) complex position sensor (5), be equipped with locating piece (6) on carriage release lever (4), cantilever (2) with be equipped with elasticity piece (7) that resets between carriage release lever (4).
2. The substrate transfer apparatus for an epitaxial furnace according to claim 1, wherein: elasticity resets piece (7) and is located for coil spring and cover on carriage release lever (4), be equipped with spacing portion (21) on cantilever (2), elasticity reset piece (7) with spacing portion (21) butt.
3. The substrate transfer apparatus for an epitaxial furnace according to claim 1, wherein: the moving rod (4) is located between the position sensor (5) and the tray (3), and the positioning block (6) is arranged at one end, close to the tray (3), of the moving rod (4).
4. The substrate transfer apparatus for an epitaxial furnace according to any one of claims 1 to 3, wherein: the cantilever (2) and the tray (3) are of an integrated structure.
5. The substrate transfer apparatus for an epitaxial furnace according to claim 4, wherein: the cantilever (2) is a titanium alloy cantilever or a quartz cantilever, and the tray (3) is a titanium alloy tray or a quartz tray.
CN202110320187.3A 2021-03-25 2021-03-25 Substrate conveying device suitable for epitaxial furnace Pending CN113078087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110320187.3A CN113078087A (en) 2021-03-25 2021-03-25 Substrate conveying device suitable for epitaxial furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110320187.3A CN113078087A (en) 2021-03-25 2021-03-25 Substrate conveying device suitable for epitaxial furnace

Publications (1)

Publication Number Publication Date
CN113078087A true CN113078087A (en) 2021-07-06

Family

ID=76610846

Family Applications (1)

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CN202110320187.3A Pending CN113078087A (en) 2021-03-25 2021-03-25 Substrate conveying device suitable for epitaxial furnace

Country Status (1)

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CN (1) CN113078087A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105810620A (en) * 2014-12-30 2016-07-27 亦立科技有限公司 Wafer transmitting arm, wafer transmitting device and wafer maintaining mechanism
CN209947813U (en) * 2019-05-06 2020-01-14 杭州弘晟智能科技有限公司 Tool for handling substrate and epitaxial growth furnace comprising same
CN112309941A (en) * 2020-10-29 2021-02-02 北京北方华创微电子装备有限公司 A transport subassembly and semiconductor processing equipment for semiconductor processing equipment

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105810620A (en) * 2014-12-30 2016-07-27 亦立科技有限公司 Wafer transmitting arm, wafer transmitting device and wafer maintaining mechanism
CN209947813U (en) * 2019-05-06 2020-01-14 杭州弘晟智能科技有限公司 Tool for handling substrate and epitaxial growth furnace comprising same
CN112309941A (en) * 2020-10-29 2021-02-02 北京北方华创微电子装备有限公司 A transport subassembly and semiconductor processing equipment for semiconductor processing equipment

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