CN113078084A - Semiconductor manufacturing method and system - Google Patents
Semiconductor manufacturing method and system Download PDFInfo
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- CN113078084A CN113078084A CN202010009195.1A CN202010009195A CN113078084A CN 113078084 A CN113078084 A CN 113078084A CN 202010009195 A CN202010009195 A CN 202010009195A CN 113078084 A CN113078084 A CN 113078084A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 61
- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 230000001681 protective effect Effects 0.000 claims abstract description 95
- 238000000034 method Methods 0.000 claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000007789 gas Substances 0.000 claims description 115
- 238000010926 purge Methods 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 238000001514 detection method Methods 0.000 claims description 16
- 230000009471 action Effects 0.000 claims description 14
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- 238000007689 inspection Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 7
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 96
- 230000032258 transport Effects 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 5
- 230000036541 health Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910052756 noble gas Inorganic materials 0.000 description 4
- 150000002835 noble gases Chemical class 0.000 description 4
- 206010021143 Hypoxia Diseases 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009965 odorless effect Effects 0.000 description 2
- 230000029058 respiratory gaseous exchange Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/6773—Conveying cassettes, containers or carriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67389—Closed carriers characterised by atmosphere control
- H01L21/67393—Closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to the technical field of semiconductor manufacturing, and discloses a semiconductor manufacturing method and system. The method comprises the following steps: in the operation of transmitting the wafer, introducing protective gas into the wafer carrying box, and controlling the real-time parameters of the protective gas in the wafer carrying box within a safety range; and adjusting the amount of introduced protective gas according to the real-time parameters. The invention can control the stable gas environment in the wafer conveying process by improving the automatic material handling system of the semiconductor manufacturing production line, is beneficial to avoiding the wafer from being influenced by the environment of temperature and water vapor in the conveying process, and further improves the yield of the wafer in production.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor manufacturing method and system.
Background
Semiconductor manufacturing lines typically employ automated material handling systems that transport cassettes containing wafers from one semiconductor manufacturing process tool to the next via overhead transport carts to load ports of the process tools.
With the continuous reduction of the feature size of semiconductor integrated circuit devices, the design size of the conventional dynamic random access memory is smaller than 25 nm, and in order to prevent the wafer from being influenced by temperature, water vapor and other active gases in the transportation process between different process steps, the wafer is protected by introducing an inactive gas into the wafer carrying box. However, since the wafer cassette is a non-hermetic system, and the concentration of moisture and other active gases increases due to slow leakage of the inactive gas over time, the wafers are exposed to the risk of oxidation and corrosion, and therefore, it becomes especially important to control the stable gas environment during the wafer transportation process.
Disclosure of Invention
The invention aims to provide a semiconductor manufacturing method and a semiconductor manufacturing system, which can improve the yield of wafers in production by controlling the stable gas environment in the wafer conveying process.
In order to solve the above technical problem, the present invention provides a semiconductor manufacturing method, comprising:
in the operation of transmitting the wafers among different process steps, introducing protective gas into the wafer carrying box, and controlling the real-time parameters of the protective gas in the wafer carrying box within a safety range;
and adjusting the amount of introduced protective gas according to the real-time parameters.
Optionally, a sensor is disposed on the wafer cassette, wherein the sensor includes: gas sensor, baroceptor, temperature sensor.
Optionally, the acquiring the real-time parameter includes: detecting the temperature in the wafer carrying box in real time through a temperature sensor; detecting the air pressure in the wafer carrying box in real time through an air pressure sensor; and detecting the concentration of protective gas, the concentration of water vapor and the concentration of oxygen in the wafer carrying box in real time through a gas sensor.
Optionally, the sensor interfaces with an automated handling system and a shielding gas purge system.
Optionally, when the real-time parameter of the shielding gas in the wafer cassette is not within the safety range, the automated handling system outputs a reminding message.
Optionally, setting a first threshold value of the shielding gas concentration; when the gas sensor detects that the real-time parameter of the concentration of the protective gas in the wafer carrying box is lower than the first threshold value, the automatic carrying system outputs reminding information, starts the protective gas purging system to fill the protective gas into the wafer carrying box, and stops the gas filling action of the protective gas purging system when the real-time parameter of the concentration of the protective gas reaches a safety range.
Optionally, a second threshold of the water vapor concentration is set, when the gas sensor detects that the real-time parameter of the water vapor concentration in the wafer carrying box rises to the second threshold, the automatic carrying system outputs reminding information, the protective gas purging system is started to fill protective gas into the wafer carrying box, the water vapor is replaced, and when the real-time parameter of the protective gas concentration reaches a safety range, the gas filling action of the protective gas purging system is stopped.
Optionally, a third threshold of the oxygen concentration is set, when the gas sensor detects that the oxygen concentration in the wafer carrier box rises to the third threshold, the automatic handling system outputs reminding information, starts the protective gas purging system to fill protective gas into the wafer carrier box, replaces oxygen, and stops the gas filling action of the protective gas purging system when the real-time parameter of the protective gas concentration reaches a safety range.
Optionally, the detecting and inflating actions are repeated until the automated handling system performs the handling action to transport the wafer carrier to the next process step.
Optionally, the shielding gas comprises: nitrogen gas and/or rare gas.
An aspect of the present invention also provides a semiconductor manufacturing system, including:
the inflation module is used for introducing protective gas into the wafer carrying box;
the detection module is used for detecting real-time parameters of protective gas in the wafer carrying box;
the judging module is used for receiving the real-time parameters and judging whether the real-time parameters of the protective gas in the wafer carrying box are in a safety range or not;
and the execution module is used for adjusting the amount of introduced protective gas according to the instruction of the judgment module and controlling the real-time parameters of the protective gas in the wafer carrying box within a safety range.
Optionally, the detection module includes: the first detection module is used for detecting the temperature in the wafer carrying box in real time through a temperature sensor; the second detection module is used for detecting the air pressure in the wafer carrying box in real time through an air pressure sensor; and the third detection module is used for detecting the concentration of the protective gas, the concentration of water vapor and the concentration of oxygen in the wafer carrying box in real time through the gas sensor.
Optionally, the executing module further includes: and the execution module is used for outputting reminding information when the real-time parameters of the protective gas in the wafer carrying box are not in the safety range.
Compared with the existing conductor manufacturing technology, the automatic material handling system of the semiconductor manufacturing production line is mainly improved, so that a stable gas environment can be controlled in the wafer conveying process, the wafers are prevented from being influenced by the temperature and water vapor in the conveying process, and the wafer production yield is improved.
Drawings
FIG. 1 is a schematic diagram of a semiconductor fabrication process in accordance with one embodiment of the present invention;
FIG. 2 is a schematic diagram of a semiconductor manufacturing system in accordance with one embodiment of the present invention.
Brief description of the drawings
A wafer cassette 0;
a suspended conveying trolley 1;
a shielding gas 2;
semiconductor manufacturing process equipment 3;
the next semiconductor manufacturing process equipment 4.
Detailed Description
The invention provides a semiconductor manufacturing method which is provided by the invention and is combined with the drawings and the detailed description. As will be described in further detail.
Fig. 1 is a schematic diagram of a semiconductor manufacturing method according to an embodiment of the invention.
A facility in a clean room (FAB) for semiconductor manufacturing is provided, which in one embodiment is configured to transfer at least one customized transfer tool. A semiconductor manufacturing line typically employs an automated material handling system that transports wafers from one semiconductor manufacturing process tool 3 to the next 4 by carrying a wafer carrier (FOUP)0 containing the wafers to a load port of the process tool via an overhead transport vehicle (OHT) 1. In the operation of transmitting the wafer, the protective gas 2 is introduced into the wafer cassette 0, and the real-time parameters of the protective gas 2 in the wafer cassette 0 are detected.
The shielding gas 2 includes: nitrogen gas and/or rare gas. Noble gases are also known as inert gases. They are colorless and odorless monatomic gases at normal temperature and pressure, and are difficult to chemically react. Therefore, there are semiconductor manufacturing processes in which they are commonly used as a protective gas, taking advantage of the chemical property that noble gases are extremely inactive.
In order to protect the wafer in the stable gas environment, it is necessary to keep the concentration of water vapor, oxygen, etc. in the wafer cassette 0 close to zero, and the protective gas 2, such as nitrogen, may be continuously introduced into the wafer cassette 0. However, if the concentration of the shielding gas 2 is not detected and the shielding gas is introduced into the wafer cassette 0, the nitrogen content in the whole semiconductor manufacturing clean room (FAB), the overhead hoist transport vehicle (OHT)1 and the workshop of the semiconductor manufacturing line will continuously rise, which will affect the normal breathing of all technicians in the semiconductor manufacturing line and even cause oxygen deficiency to cause life risk. Thereby causing environmental, safety, health (ESH) accidents.
Meanwhile, when the concentration of the protective gas 2 is reduced, the wafer defects are generated on the wafer due to the increase of the concentration of the water vapor and the oxygen. Therefore, the real-time parameters of the protective gas 2 in the wafer cassette 0 need to be controlled within a safe range, and the amount of the introduced protective gas 2 needs to be adjusted according to the real-time parameters.
Specifically, a sensor is simultaneously disposed on the wafer cassette 0, wherein the sensor includes: gas sensors, gas pressure sensors, temperature sensors, etc.
Detecting the temperature in the wafer carrying box 0 in real time through a temperature sensor; detecting the air pressure in the wafer carrying box 0 in real time through an air pressure sensor; and detecting the concentration of the protective gas 2 in the wafer carrying box 0 in real time through a gas sensor. Therefore, the concentration of water vapor and the concentration of oxygen in the wafer cassette 0 can be detected in real time.
For example, the concentration of water vapor and oxygen in the wafer cassette 0 is calculated and tested by counting for a period of time, and the threshold values are set respectively. And adjusting the filling amount of the introduced nitrogen according to the change of a gas concentration curve output by the gas sensor. Therefore, the nitrogen filling operation can be changed into a dynamic operation, thereby reducing the accidents causing environment, safety and health (ESH) and improving the safety of the ESH.
Further, the sensor interfaces with an automated handling system and a shielding gas purge system. And when the gas concentration parameter of the protective gas 2 in the wafer carrying box 0 is not in the safety range, the company automatic carrying system outputs reminding information.
And prompting the concentration parameter of the current protective gas 2 to an operator on duty in a short message and mail mode through a company automatic handling system connected with a machine host. Meanwhile, the output reminding information is used for reminding the operator on duty in a short message and mail mode.
The purpose of the sensor interfacing with the automated handling system and the shielding gas purging system is to obtain time parameters (Queue time waiting time) between different process steps from the automated handling system, and the sensor continuously monitors the concentration of the shielding gas 2 in the wafer cassette 0 within this time range, while dynamically regulating and controlling the sensor through the shielding gas purging system. The wafer is ensured to be in a stable environment in the waiting time between different process steps.
Specifically, a first threshold value of the concentration of the shielding gas 2 is set; when the real-time parameter of the concentration of the protective gas 2 in the wafer carrying box 0 is lower than the first threshold value, the automatic carrying system outputs reminding information, starts the protective gas purging system to fill the protective gas 2 into the wafer carrying box 0, and stops the inflation action of the protective gas purging system when the real-time parameter of the concentration of the protective gas 2 reaches a safety range.
And setting a second threshold value of the water vapor concentration, outputting reminding information by the automatic handling system when the real-time parameter of the water vapor concentration in the wafer carrying box 0 rises to the second threshold value, starting the protective gas purging system to fill the protective gas 2 in the wafer carrying box 0, replacing the water vapor, and stopping the gas filling action of the protective gas purging system when the real-time parameter of the concentration of the protective gas 2 reaches a safety range.
And setting a third threshold value of the oxygen concentration, outputting reminding information by the automatic handling system when the oxygen concentration in the wafer carrying box 0 rises to the third threshold value, starting the protective gas purging system to fill the wafer carrying box 0 with the protective gas 2, replacing the oxygen, and stopping the inflation action of the protective gas purging system when the real-time parameter of the concentration of the protective gas 2 reaches a safe range.
For example, a threshold value of the shielding gas concentration may also be set. When the gas concentration parameter of the protective gas 2 in the wafer carrying box 0 is smaller than the threshold value, the company automatic carrying system outputs reminding information, so that the speed of introducing the protective gas 2 can be increased by a worker, and the filling amount of the protective gas 2 is increased. Until the gas concentration parameter of the shielding gas 2 stabilizes at a threshold value.
When the gas concentration parameter of the protective gas 2 in the wafer carrying box 0 is greater than the threshold value, the company automatic carrying system outputs reminding information, and the staff can reduce the speed of introducing the protective gas 2 and control the filling amount of the protective gas 2. Until the gas concentration parameter of the shielding gas 2 stabilizes at a threshold value.
Further, repeating any one of the above detecting and inflating actions until the automated handling system performs a handling action to transport the pod to a next process step.
Specifically, in the present embodiment, the detection operation may be performed by selecting any one of the three (the shielding gas concentration, the water vapor concentration, and the oxygen concentration) to be detected, and the shielding gas 2 may be introduced, and the gas concentrations of the two gases may be decreased. Or the detected action can be considered that the three (the concentration of the protective gas, the concentration of water vapor and the concentration of oxygen) are detected, and if any one of the three is not up to the standard, the inflation action is performed.
Therefore, in the embodiment, the automatic material handling system of the semiconductor manufacturing production line is mainly improved, so that the stable gas environment can be controlled in the wafer conveying process, the wafer is favorably prevented from being influenced by the temperature and the water vapor in the conveying process, the filling amount of the introduced protective gas 2 is dynamically controlled, the accidents of environment, safety and health (ESH) are reduced, the safety of the ESH is improved, and the yield of the wafer in production is improved.
Embodiments of the present invention also provide a semiconductor manufacturing system.
FIG. 2 is a schematic diagram of a semiconductor manufacturing system in accordance with one embodiment of the present invention.
The present embodiment provides a system for a semiconductor manufacturing equipment (FAB) that improves yield in wafer production by controlling a stable gas environment during wafer transfer between different process steps.
And the gas filling module 100 is used for filling the wafer cassette 0 with the protective gas 2.
The detecting module 200 is used for detecting real-time parameters of the protective gas 2 in the wafer cassette 0.
In this embodiment, the semiconductor manufacturing line basically employs an automated material handling system, which transports a wafer carrier (FOUP)0 containing wafers to a load port of a process tool via an overhead transport vehicle (OHT)1, and transfers the wafers from one semiconductor manufacturing process tool 3 to the next semiconductor manufacturing process tool 4. In the operation of transmitting the wafer, the protective gas 2 is introduced into the wafer cassette 0, and the real-time parameters of the protective gas 2 in the wafer cassette 0 are detected. The shielding gas 2 includes: nitrogen gas and/or rare gas. Noble gases are also known as inert gases. They are colorless and odorless monatomic gases at normal temperature and pressure, and are difficult to chemically react. Therefore, there are semiconductor manufacturing processes in which they are commonly used as a protective gas, taking advantage of the chemical property that noble gases are extremely inactive.
In order to protect the wafer in the stable gas environment and keep the concentration of water vapor, oxygen, etc. in the wafer cassette 0 close to zero, the wafer cassette 0 needs to be continuously filled with the protective gas 2, for example, nitrogen is continuously filled into the wafer cassette 0. However, if the concentration of the shielding gas 2 is not detected and the shielding gas is introduced into the wafer cassette 0, the nitrogen content in the whole semiconductor manufacturing clean room (FAB), the overhead hoist transport vehicle (OHT)1 and the workshop of the semiconductor manufacturing line will continuously rise, which will affect the normal breathing of all technicians in the semiconductor manufacturing line and even cause oxygen deficiency to cause life risk. Thereby causing environmental, safety, health (ESH) accidents.
Therefore, further, the detection module 200 comprises: the first detection module is used for detecting the temperature in the wafer carrying box 0 in real time through a temperature sensor; the second detection module is used for detecting the air pressure in the wafer carrying box 0 in real time through an air pressure sensor; and the third detection module is used for detecting the concentration of the protective gas 2 in the wafer carrying box 0, the concentration of water vapor and the concentration of oxygen in real time through a gas sensor.
Therefore, the concentration, temperature and pressure of the shielding gas 2 in the wafer cassette 0 can be detected in real time. The detection module 200 sends the detected real-time parameters to the judgment module 300 through an instruction.
The determining module 300 is configured to receive the information of the detecting module 200, and feed back a determining instruction to the executing module 400 according to the real-time parameter.
The determining module 300 is configured to determine whether a real-time parameter of the shielding gas 2 in the wafer cassette is within a safe range, and send a determining instruction to the executing module 300.
And the execution module 400 is configured to adjust the amount of the introduced protective gas 2 according to the instruction of the determination module, and control the real-time parameter of the protective gas 2 in the wafer cassette 0 within a safe range.
The execution module 400 further comprises: and the execution module is used for outputting reminding information when the real-time parameter of the protective gas 2 in the wafer carrying box 0 is not in the safety range.
And the concentration parameters of the current protective gas 2 are regularly prompted to the operator on duty in a short line and mail mode through a company automatic handling system connected with a machine host. Meanwhile, the output reminding information is used for reminding the operator on duty in a short message and mail mode.
Specifically, for example: when the gas concentration parameter of the protective gas 2 in the wafer carrying box 0 is smaller than the threshold value, the company automatic carrying system outputs reminding information, so that the speed of introducing the protective gas 2 can be increased by a worker, and the filling amount of the protective gas 2 is increased. Until the gas concentration parameter of the shielding gas 2 stabilizes at a threshold value.
When the gas concentration parameter of the protective gas 2 in the wafer carrying box 0 is greater than the threshold value, the company automatic carrying system outputs reminding information, and the staff can reduce the speed of introducing the protective gas 2 and control the filling amount of the protective gas 2. Until the gas concentration parameter of the shielding gas 2 stabilizes at a threshold value.
Therefore, in the embodiment, the automatic material handling system of the semiconductor manufacturing production line is mainly improved, so that the stable gas environment can be controlled in the wafer conveying process, the wafer is favorably prevented from being influenced by the temperature and the water vapor in the conveying process, the filling amount of the introduced protective gas 2 is dynamically controlled, the accidents of environment, safety and health (ESH) are reduced, the safety of the ESH is improved, and the yield of the wafer in production is improved.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (11)
1. A method of manufacturing a semiconductor, comprising:
in the operation of transmitting the wafer, introducing protective gas into the wafer carrying box, and controlling the real-time parameters of the protective gas in the wafer carrying box within a safety range;
and adjusting the amount of introduced protective gas according to the real-time parameters.
2. The semiconductor manufacturing method according to claim 1, further comprising: set up the sensor in the wafer carries the box, wherein, the sensor includes: gas sensor, baroceptor, temperature sensor.
3. The semiconductor manufacturing method of claim 2, wherein obtaining the real-time parameters comprises: detecting the temperature in the wafer carrying box in real time through a temperature sensor; detecting the air pressure in the wafer carrying box in real time through an air pressure sensor; and detecting the concentration of protective gas, the concentration of water vapor and the concentration of oxygen in the wafer carrying box in real time through a gas sensor.
4. The semiconductor manufacturing method according to claim 2, further comprising: the sensor is interfaced with an automated handling system and a shielding gas purging system.
5. The semiconductor manufacturing method according to claim 4, further comprising: and when the real-time parameters of the protective gas in the wafer carrying box are not in the safety range, the automatic carrying system outputs reminding information.
6. The semiconductor manufacturing method according to claim 5, further comprising: setting a first threshold value of the protective gas concentration; when the gas sensor detects that the real-time parameter of the concentration of the protective gas in the wafer carrying box is lower than the first threshold value, the automatic carrying system outputs reminding information, starts the protective gas purging system to fill the protective gas into the wafer carrying box, and stops the gas filling action of the protective gas purging system when the real-time parameter of the concentration of the protective gas reaches a safety range.
7. The semiconductor manufacturing method according to claim 6, further comprising: and repeating the detection and the inflation until the automatic carrying system carries out the carrying action to carry the wafer carrying box to the next process step.
8. The semiconductor manufacturing method according to claim 1, wherein the protective gas includes: nitrogen gas and/or rare gas.
9. A semiconductor manufacturing system, comprising:
the inflation module is used for introducing protective gas into the wafer carrying box;
the detection module is used for detecting real-time parameters of protective gas in the wafer carrying box;
the judging module is used for receiving the real-time parameters and judging whether the real-time parameters of the protective gas in the wafer carrying box are in a safety range or not;
and the execution module is used for adjusting the amount of introduced protective gas according to the instruction of the judgment module and controlling the real-time parameters of the protective gas in the wafer carrying box within a safety range.
10. The semiconductor manufacturing system of claim 9, wherein the inspection module comprises:
the first detection module is used for detecting the temperature in the wafer carrying box in real time through a temperature sensor;
the second detection module is used for detecting the air pressure in the wafer carrying box in real time through an air pressure sensor;
and the third detection module is used for detecting the concentration of the protective gas, the concentration of water vapor and the concentration of oxygen in the wafer carrying box in real time through the gas sensor.
11. The semiconductor manufacturing system of claim 9, wherein the execution module further comprises: and the execution module is used for outputting reminding information when the real-time parameters of the protective gas in the wafer carrying box are not in the safety range.
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| CN202010009195.1A CN113078084A (en) | 2020-01-06 | 2020-01-06 | Semiconductor manufacturing method and system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024082598A1 (en) * | 2022-10-16 | 2024-04-25 | 上海哥瑞利软件股份有限公司223 | Method for monitoring gas concentration and air pressure data of semiconductor 12-inch n2stk |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1503749A (en) * | 2001-01-10 | 2004-06-09 | 恩特格里斯鳄鱼有限公司 | Transportable container including an internal environment monitor |
| TWM323684U (en) * | 2007-07-20 | 2007-12-11 | Santa Phoenix Technology Inc | Automatic nitrogen purification system |
| CN101600637A (en) * | 2006-09-14 | 2009-12-09 | 布鲁克斯自动化公司 | Carrier gas system and substrate objective table are to the connection of loading the port |
| KR101171218B1 (en) * | 2011-09-06 | 2012-08-06 | 김호준 | Apparatus of purging gas inside wafer carrier in type of front opening unified pod and the method thereof |
| CN109727899A (en) * | 2017-10-30 | 2019-05-07 | 三星电子株式会社 | Substrate carrier |
| CN109786283A (en) * | 2017-11-14 | 2019-05-21 | 台湾积体电路制造股份有限公司 | Sensing system, the system for monitoring wafer transfer box and the method for monitoring its environment |
-
2020
- 2020-01-06 CN CN202010009195.1A patent/CN113078084A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1503749A (en) * | 2001-01-10 | 2004-06-09 | 恩特格里斯鳄鱼有限公司 | Transportable container including an internal environment monitor |
| CN101600637A (en) * | 2006-09-14 | 2009-12-09 | 布鲁克斯自动化公司 | Carrier gas system and substrate objective table are to the connection of loading the port |
| TWM323684U (en) * | 2007-07-20 | 2007-12-11 | Santa Phoenix Technology Inc | Automatic nitrogen purification system |
| KR101171218B1 (en) * | 2011-09-06 | 2012-08-06 | 김호준 | Apparatus of purging gas inside wafer carrier in type of front opening unified pod and the method thereof |
| CN109727899A (en) * | 2017-10-30 | 2019-05-07 | 三星电子株式会社 | Substrate carrier |
| CN109786283A (en) * | 2017-11-14 | 2019-05-21 | 台湾积体电路制造股份有限公司 | Sensing system, the system for monitoring wafer transfer box and the method for monitoring its environment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024082598A1 (en) * | 2022-10-16 | 2024-04-25 | 上海哥瑞利软件股份有限公司223 | Method for monitoring gas concentration and air pressure data of semiconductor 12-inch n2stk |
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