CN113078083A - Quartz boat for diffusion of laminated tiles and half large-size silicon wafers and diffusion method - Google Patents
Quartz boat for diffusion of laminated tiles and half large-size silicon wafers and diffusion method Download PDFInfo
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- CN113078083A CN113078083A CN202010003778.3A CN202010003778A CN113078083A CN 113078083 A CN113078083 A CN 113078083A CN 202010003778 A CN202010003778 A CN 202010003778A CN 113078083 A CN113078083 A CN 113078083A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 192
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 192
- 239000010703 silicon Substances 0.000 title claims abstract description 192
- 238000009792 diffusion process Methods 0.000 title claims abstract description 150
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 122
- 239000010453 quartz Substances 0.000 title claims abstract description 114
- 235000012431 wafers Nutrition 0.000 title abstract description 164
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 52
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 87
- 229910052757 nitrogen Inorganic materials 0.000 claims description 43
- 230000002787 reinforcement Effects 0.000 claims description 32
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 19
- 229910052698 phosphorus Inorganic materials 0.000 claims description 19
- 239000011574 phosphorus Substances 0.000 claims description 19
- 238000005520 cutting process Methods 0.000 claims description 16
- 230000000087 stabilizing effect Effects 0.000 claims description 8
- 238000007599 discharging Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 239000013589 supplement Substances 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 238000003780 insertion Methods 0.000 abstract description 6
- 230000037431 insertion Effects 0.000 abstract description 6
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 description 89
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 22
- 239000001301 oxygen Substances 0.000 description 22
- 229910052760 oxygen Inorganic materials 0.000 description 22
- 238000000151 deposition Methods 0.000 description 18
- 230000008021 deposition Effects 0.000 description 14
- 239000010410 layer Substances 0.000 description 14
- 125000004437 phosphorous atom Chemical group 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012966 insertion method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a quartz boat for diffusion of stacked and half-large-size silicon wafer batteries, which comprises a quartz boat body, a support piece, a reinforcing piece and a locking piece, wherein the support piece is detachably connected with the quartz boat body, can move relative to the reinforcing piece and is locked by the locking piece, and is arranged at the bottom of the quartz boat body so as to be convenient for supporting silicon wafers; the reinforcing piece is detachably connected with the quartz boat body, the reinforcing piece can move relative to the quartz boat body and is locked by the locking piece, and the reinforcing piece and the supporting piece are arranged in parallel, so that the silicon wafer inserting piece can be conveniently positioned; the support piece and the reinforcing piece are both provided with clamping teeth, and the clamping teeth on the support piece correspond to the clamping teeth on the reinforcing piece one by one; the latch includes connecting portion and supporting part, and connecting portion are connected with the supporting part. The quartz boat has the beneficial effects that the quartz boat is suitable for being used when a silicon wafer battery is diffused, the quartz boat is improved, the silicon wafer is cut, and the insertion is carried out in a vertical mode, so that the production requirement of a diffusion furnace is met.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a quartz boat for diffusion of laminated and semi-large-size silicon wafers and a diffusion method.
Background
With the rapid increase of the demand of the solar photovoltaic power generation market for high-power solar photovoltaic modules, the shingled and half-sheet solar photovoltaic modules become mainstream products of the high-power modules. Large-size silicon wafers (e.g., M6166 x166mm, M9190 x190mm, M10200 x200mm, M12210 x210mm) can be combined with the shingle and half-tile assembly technology to achieve higher power assembly production. Because the large-size integral silicon wafers (such as M6166 x166mm, M9190 x190mm, M10200 x200mm and M12210 x210mm) exceed the limit range of the pipe diameter of the existing diffusion furnace pipe, after the silicon wafers are inserted, a quartz boat cannot be placed in the diffusion furnace, the diffusion production requirement cannot be met, and the modification cost of the diffusion furnace is high.
Disclosure of Invention
In view of the above problems, the invention provides a quartz boat and a diffusion method for diffusion of stacked and half large-size silicon wafers, which are particularly suitable for diffusion of large-size silicon wafer batteries, and the quartz boat is improved, and simultaneously the silicon wafers are cut and inserted in a vertical mode, so that the production requirements of a diffusion furnace are met.
In order to solve the technical problems, the invention adopts the technical scheme that: a quartz boat for diffusion of stacked and half-sheet large-size silicon wafer batteries comprises a quartz boat body, a supporting piece, a reinforcing piece and a locking piece, wherein,
the supporting piece is detachably connected with the quartz boat body, can move relative to the reinforcing piece and is locked by the locking piece, and is arranged at the bottom of the quartz boat body so as to be convenient for supporting the silicon wafer;
the reinforcing piece is detachably connected with the quartz boat body, the reinforcing piece can move relative to the quartz boat body and is locked by the locking piece, and the reinforcing piece and the supporting piece are arranged in parallel, so that the silicon wafer inserting piece can be conveniently positioned;
the support piece and the reinforcing piece are both provided with clamping teeth, and the clamping teeth on the support piece correspond to the clamping teeth on the reinforcing piece one by one; and the number of the first and second groups,
the latch includes connecting portion and supporting part, and connecting portion are connected with the supporting part.
Further, the quantity of reinforcement is a plurality of, and a plurality of reinforcements set gradually along the length direction of quartz boat body, and the reinforcement can remove for the quartz boat body, and adjacent reinforcement opposite face all is equipped with the latch, is convenient for spread not unidimensional silicon chip.
Further, the reinforcement includes the connecting rod, the both ends of connecting rod respectively with quartz boat body sliding connection, the retaining member is connected with connecting piece one end, be convenient for lock the reinforcement on quartz boat body.
Furthermore, at least one supporting piece is arranged between the adjacent reinforcing pieces, and one end of each supporting piece is connected with the locking piece, so that the supporting pieces are conveniently locked on the quartz boat body.
Furthermore, the reinforcing piece and the supporting piece are both perpendicular to the length direction of the quartz boat body.
Further, connecting portion include card post and card post supporting part, and the both sides of card post are located to card post supporting part symmetry.
Furthermore, the clamping column supporting part protrudes out of the side wall of the clamping column.
Further, the distance between the adjacent clamping teeth is 2.18-2.58 mm.
A diffusion method for a laminated and semi-large-size silicon wafer battery comprises the following steps,
s1: cutting the silicon wafer after texturing, and dividing the silicon wafer after texturing into two parts to form a half silicon wafer;
s2: loading the cut half silicon wafers in a vertical mode;
s3: and (3) performing diffusion:
s30: stabilizing the surface temperature of the half silicon wafer and reducing the temperature difference between the center and the edge of the silicon wafer;
s31: preparing an oxide layer, and oxidizing the surface of the half silicon wafer;
s32: low-temperature constant source diffusion is carried out, and a phosphorus source is deposited on the surface of the half silicon wafer;
s33: high-temperature propulsion is carried out, so that PN junctions are conveniently formed;
s34: high-temperature source communication is carried out, and diffusion source supplement is carried out;
s35: secondly, pushing the junction to form a phosphorosilicate glass layer;
s36: and (6) cooling and discharging.
Further, in step S30, the temperature of the diffusion furnace is raised, and nitrogen is introduced to maintain the temperature, wherein the temperature of the diffusion furnace is raised to the diffusion temperature, the diffusion temperature is 760-.
By adopting the technical scheme, the quartz boat has a simple structure, is convenient to use, can be adjusted according to different sizes of silicon wafers, and meets the requirements of inserting pieces of the silicon wafers with different sizes; meanwhile, the quartz boat is divided into a plurality of spaces by the reinforcing parts, so that silicon wafer inserting is conveniently carried out in a vertical mode, and the existing diffusion furnace can meet the requirements of large-size silicon wafer diffusion production; the existing solar production diffusion furnace tube is not required to be modified, only the quartz boat is required to be modified, and the modification cost is low; the diffusion capacity is not greatly lost, and the manufacturing process of the produced battery piece is not influenced.
Drawings
FIG. 1 is a schematic diagram of a prior art silicon wafer insertion method;
FIG. 2 is a schematic side view of the structure of FIG. 1;
FIG. 3 is a schematic view of a vertical mode insert of one embodiment of the present invention;
FIG. 4 is a side view schematic of the structure of FIG. 3;
FIG. 5 is a schematic view of a quartz boat according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a latch according to an embodiment of the present invention.
In the figure:
1. furnace tube 2 of diffusion furnace, quartz boat 3 and silicon wafer
4. Reinforcing piece 5, latch 6 and quartz boat body
7. Support piece
Detailed Description
The invention is further described with reference to the following figures and specific embodiments.
Fig. 3 shows a schematic structural diagram of an embodiment of the present invention, specifically showing the structure of the embodiment, and the embodiment relates to a quartz boat and a diffusion method for diffusion of stacked and half large-size silicon wafer batteries, which are used when a large-size silicon wafer is diffused, and the quartz boat is provided with a plurality of reinforcing members capable of moving relative to a quartz boat body, so that when the silicon wafer is diffused, the silicon wafer can be inserted in a vertical manner, and the cut silicon wafer is inserted into the quartz boat for diffusion, thereby facilitating the diffusion of the large-size silicon wafer, and the existing diffusion furnace is not required to be modified, reducing the production cost, and increasing the productivity.
A quartz boat for diffusion of stacked and half-large-size silicon wafer batteries is disclosed, as shown in FIGS. 3-6, and comprises a quartz boat body 6, a support member 7, a reinforcement member 4 and a locking member, wherein the support member 7 is detachably connected with the quartz boat body 6, the support member 7 can move relative to the quartz boat body 6 and is locked by the locking member, and the support member 7 is arranged at the bottom of the quartz boat body 6 so as to support a silicon wafer 3; the reinforcing piece 4 is detachably connected with the quartz boat body 6, the reinforcing piece 4 can move relative to the quartz boat body 6 and is locked through the locking piece, and the reinforcing piece 4 and the supporting piece 7 are arranged in parallel, so that the silicon wafer 3 can be conveniently positioned when being inserted into the wafer; the support member 7 and the reinforcing member 4 are both provided with latch teeth 5, and the latch teeth 5 on the support member 7 correspond to the latch teeth 5 on the reinforcing member 4 one by one; and, the latch 5 includes a connection portion and a support portion, the connection portion being connected with the support portion. When carrying out the loading of silicon chip 3, carry out the distance regulation between the adjacent reinforcement 4 according to the size of silicon chip 3, the silicon chip 3 of being convenient for is placed between adjacent reinforcement 4, and simultaneously, carry out support piece 7's regulation according to the distance between the adjacent reinforcement 4, make support piece 7 be located between the adjacent reinforcement 4, the silicon chip 3 of being convenient for loads on the quartz boat, and fix a position through reinforcement 4, support, prevent that silicon chip 3 from rocking on the quartz boat, cause silicon chip 3 to damage, the silicon chip 3 of being convenient for diffuses.
Specifically, the quartz boat body 6 is a supporting framework, which facilitates the installation of the reinforcing member 4 and the supporting member 7. The quartz boat body 6 comprises a first end plate, a second end plate, a first connecting rod, a second connecting rod, a third connecting rod and a fourth connecting rod, wherein two ends of the first connecting rod, the second connecting rod, the third connecting rod and the fourth connecting rod are connected with the first end plate and the second end plate, the first connecting rod and the second connecting rod are arranged in parallel, the third connecting rod and the fourth connecting rod are arranged in parallel, meanwhile, the first connecting rod and the second connecting rod are positioned on the same plane, the third connecting rod and the fourth connecting rod are positioned on the same plane, the plane where the first connecting rod and the second connecting rod are positioned is positioned on the plane where the third connecting rod and the fourth connecting rod are positioned, the two planes are arranged in parallel, so that the first connecting rod, the second connecting rod, the third connecting rod and the fourth connecting rod form a containing space, the silicon wafers 3 are convenient to be placed, the distance between the first connecting rod and the second connecting rod can be the same as the distance between the third connecting rod and, or the distance between the first connecting rod and the second connecting rod can be larger than the distance between the third connecting rod and the fourth connecting rod, and the distance is selected according to actual requirements, and no specific requirements are made here. Meanwhile, the lengths of the first connecting rod, the second connecting rod, the third connecting rod and the fourth connecting rod are selected according to the length of the actual diffusion furnace tube, and no specific requirement is made here.
The quantity of foretell reinforcement 4 is a plurality of, and a plurality of reinforcements 4 set gradually along the length direction of quartz boat body 6, and reinforcement 4 can remove for quartz boat body 6, and adjacent 4 opposite faces of reinforcement all are equipped with latch 5, are convenient for spread not unidimensional silicon chip 3. The reinforcement 4 is used for strengthening the intensity of the quartz boat body 6, and meanwhile, the accommodating space inside the quartz boat body 6 is separated, so that the silicon wafer 3 convenient to carry out vertical mode insertion.
This reinforcement 4 is shaft-like structure, and the both ends of reinforcement 4 are connected with head rod and second connecting rod respectively, and reinforcement 4 sets up with the head rod is perpendicular, and a plurality of 4 parallel arrangement of reinforcement separate into several little spaces with the inside accommodation space of quartz boat body 6, the placing of the silicon chip 3 of being convenient for. The both ends of this reinforcement 4 respectively with head rod and second connecting rod sliding connection for reinforcement 4 can slide along the head rod, makes the position of reinforcement 4 can be adjusted, is convenient for adjust the distance between the adjacent reinforcement 4, is convenient for to the loading of not unidimensional silicon chip 3.
This reinforcement 4 includes the connecting rod, the both ends of connecting rod respectively with quartz boat body 6 sliding connection, the retaining member is connected with the connecting rod, the reinforcement 4 of being convenient for locks on quartz boat body 6. The first connecting rod and the second connecting rod are both provided with a sliding chute, the sliding chute on the first connecting rod corresponds to the sliding chute on the second connecting rod in position, and two ends of the connecting rod are slidably arranged in the sliding chutes, so that the connecting rod is conveniently connected with the first connecting rod and the second connecting rod in a sliding manner corresponding to the connecting rod; the bottom at the spout of the first connecting rod or the spout of second connecting rod is equipped with the through-hole, the tip in the one end of connecting rod is equipped with the connecting hole, the one end slidable mounting that this connecting rod was equipped with the connecting hole is in the spout that is equipped with the through-hole, be convenient for be connected with the retaining member, the retaining member is located the spout and is equipped with the outside of the first connecting rod or the second connecting rod of through-hole, retaining member one end is passed the through-hole and is connected with the connecting hole of connecting rod, the size of the other end of retaining member is greater than the size of through-hole, make the retaining member card in the outside of this first connecting rod. Preferably, the attachment holes are threaded holes and the locking member is attached to the reinforcing member 4 by means of threads.
All be equipped with latch 5 on one side of adjacent 4 opposite faces of reinforcement, and the position one-to-one of latch 5 on both sides is convenient for fix a position silicon chip 3. The number of the latch teeth 5 is multiple, the latch teeth 5 are arranged on the reinforcing part 4 at equal intervals, the distance between every two adjacent latch teeth 5 is 2.18-2.58mm, and the latch teeth are selected according to actual requirements and do not need to be specifically required.
The number of the support pieces 7 is multiple, at least one support piece 7 is arranged between the adjacent reinforcing pieces 4, two ends of each support piece 7 are respectively connected with the third connecting rod and the fourth connecting rod, the support pieces 7 are perpendicular to the third connecting rods, and the support pieces 7 are in sliding connection with the third connecting rods and the fourth connecting rods, so that the support pieces 7 can slide on the third connecting rods and the fourth connecting rods, the support pieces 7 and the reinforcing pieces 4 are convenient to match to adjust the positions and the distances according to the size of the silicon wafer 3, and the silicon wafer 3 is convenient to load.
This support piece 7 is the bracing piece, all be equipped with the spout on third connecting rod and fourth connecting rod, and the spout of third connecting rod and the position of the spout of fourth connecting rod are corresponding, make the both ends of bracing piece slide respectively and locate in the spout of third connecting rod and the spout of fourth connecting rod, and be equipped with the screw hole at the tip of the one end of bracing piece, be equipped with the through-hole bottom the spout of head rod or the bottom of the spout of fourth connecting rod, the bracing piece is when the installation, the one end that the bracing piece was equipped with the screw hole is installed on third connecting rod or the fourth connecting rod that the spout is equipped with the through-hole, the retaining member of being convenient for passes the through-hole and is connected with the screw hole of bracing piece, fix the bracing piece locking. A plurality of clamping teeth 5 are arranged on one side of the support member 7 facing the first connecting rod, and the clamping teeth 5 correspond to the clamping teeth 5 on the reinforcing member 4 one by one, so that the silicon wafers 3 can be loaded conveniently.
The locking member is preferably a bolt, and the material of the locking member is the same as that of the reinforcing member 4, and is quartz.
The latch 5 includes a connecting portion and a supporting portion, the supporting portion is connected to one end of the connecting portion, and the other end of the connecting portion is connected to the reinforcing member 4 or the supporting member 7. The connecting part comprises a plurality of clamping column supporting parts and clamping column supporting parts, the clamping column supporting parts are symmetrically arranged on two sides of the clamping column, and the clamping column supporting parts and the clamping columns are integrally formed, so that the service life of the clamping teeth 5 is long; the number of the clamping column supporting parts is selected according to the length of the clamping column, and no specific requirement is made here. The support part of the clamping column is preferably a semicircular bulge, so that the clamping teeth 5 are in point contact with the silicon wafer 3 when in contact, and the clamping teeth 5 can support the silicon wafer 3 conveniently. The diameter of the supporting part of the latch 5 is selected according to actual requirements, and the diameter of the supporting part is smaller than that of the clamping column.
The supporting part is in an arc-shaped structure and is positioned at the end part of the connecting part, and the supporting part can be in a semi-arc-shaped structure, so that the silicon wafer 3 can be conveniently inserted into the clamping groove.
The pipe diameter of the inner wall of a quartz furnace tube 1 of the diffusion furnace is 280mm, the silicon wafer with the size of 158.75 x 158.75mm is maximally born in the mode of parallel entering according to the front face of the existing diffusion tool (the placing mode is shown in figures 1 and 2), the silicon wafer is limited by the pipe diameter of the furnace tube 1 of the diffusion furnace when entering the boat and is larger than the silicon wafer with the size, the height of the entering boat is limited due to the unchanged pipe diameter of the furnace tube, and the existing quartz boat 2 and the inserting sheet mode can not meet the use requirement. The quartz boat will be described with reference to 210x210mm silicon wafers, and when loading 210x210mm silicon wafers, the silicon wafers are diced and half of the silicon wafers are loaded on the quartz boat after dicing so that the 210x210mm silicon wafers can be loaded on the quartz boat 2 and can be diffused in the diffusion furnace.
Firstly, adjusting the distance between the reinforcing parts 4 on the quartz boat and the position of the supporting part 7, wherein the size of a half silicon wafer is 210x105mm according to the size of the silicon wafer, and the distance between the adjacent reinforcing parts 4 is adjusted to be 215.5-216.5mm, so that the width between the adjacent reinforcing parts 4 is larger than the width of the silicon wafer 3, the silicon wafer is prevented from being damaged by collision during inserting the silicon wafer, and the supporting part 7 is adjusted to be between the adjacent reinforcing parts 4; after the reinforcing part 4 and the supporting part 7 are adjusted, inserting the quartz boat into a diffusion furnace for diffusion, as shown in fig. 3 and 4.
Compared with the existing quartz boat, the total length of the quartz boat is not changed, the quartz boat is 1044.5-1045.5mm, a silicon wafer with the width of 210mm is inserted, the width between the clamping teeth 5 is larger than the size of the silicon wafer, the silicon wafer is prevented from being damaged by collision during inserting the silicon wafer, the design is needed, a clamping groove with the thickness of 215.5-216.5mm is adopted, and the size of the reinforcing piece 4 for fixing the silicon wafer is 7.7-8.3mm, so that only 4 rows can be inserted; the width of the quartz boat 2 is 187.8-188.2mm, and the capacity is lost by about 20% if the clamping groove is designed according to the original design; in order to improve the capacity of the single pipe, the number of the clamping teeth 5 on the reinforcing part 4 and the supporting part 7 is increased, the width between the clamping teeth 5 is changed from 4.73-4.83mm to 2.31-2.41mm, and the number of the clamping grooves on the reinforcing part 4 is improved from 40 grooves/row to 80 grooves/row; according to the single-side diffusion, 2 wafers can be inserted into each groove, and the single tube capacity is about 640 pcs/tube when the 210x210mm semi-wafer process is used, which is about 60% higher than the capacity of a conventional quartz boat carrier, namely 400pcs boat.
A diffusion method for a laminated and semi-large-size silicon wafer battery comprises the following steps,
s1: cutting the silicon wafer after texturing, dividing the silicon wafer after texturing into two parts to form a half silicon wafer: when the silicon wafer after texturing is cut, laser is adopted for cutting, the silicon wafer after texturing is cut into two half silicon wafers, and the half silicon wafers are rectangular.
S2: loading half silicon wafers in a vertical mode: inserting a half silicon wafer into the quartz boat, loading the half silicon wafer on the quartz boat, and inserting the half silicon wafer into the quartz boat in a vertical mode, namely, the half silicon wafer is vertical to the length direction of the quartz boat; and (4) placing the quartz boat after the insertion into a diffusion furnace for diffusion.
S3: and (3) performing diffusion:
s30: the surface temperature of the half silicon wafer is stabilized, and the temperature difference between the center and the edge of the half silicon wafer is reduced: specifically, in the step of stabilizing the surface temperature of the half silicon wafer, the temperature of the diffusion furnace is raised, nitrogen is introduced, and the temperature is maintained, wherein the temperature of the diffusion furnace is raised to the diffusion temperature, the diffusion temperature is 760-. Namely, after silicon wafer diffusion, the etched and cleaned monocrystalline silicon wafer is placed into a diffusion furnace, the temperature of the diffusion furnace is raised to the diffusion temperature, the temperature of the diffusion furnace is kept at the diffusion temperature, nitrogen is introduced during the process, the temperature of the surface of the silicon wafer is stabilized, the temperature difference between the center and the edge of the silicon wafer is reduced, and better uniformity is obtained during subsequent introduction of reaction gas.
S31: preparing an oxide layer, and oxidizing the surface of a half silicon wafer: specifically, in the step of preparing the oxide layer, the temperature of a diffusion furnace is maintained according to the diffusion temperature, oxygen and nitrogen are introduced, the silicon wafer is oxidized according to the oxidation time, wherein the flow rate of the oxygen is 1-3slm, the flow rate of the nitrogen is 16-20slm, and the oxidation time is 3-5min, and the step is selected according to actual requirements without specific requirements. In the process of preparing the oxide layer, the temperature of the diffusion furnace is maintained at the diffusion temperature, nitrogen and oxygen are introduced to oxidize the surface of the half silicon wafer, and a silicon dioxide oxide layer is formed on the surface of the half silicon wafer.
S32: and (3) low-temperature constant source diffusion, and depositing a phosphorus source on the surface of the half silicon wafer: specifically, in the low-temperature constant source diffusion step, the temperature of a diffusion furnace is maintained according to the diffusion temperature, nitrogen, oxygen and a diffusion source are introduced, deposition is carried out according to the deposition time, and a phosphorus source is deposited on the surface of the silicon wafer, wherein the nitrogen flow is 8-10slm, the oxygen flow is 1-1.3slm, and the diffusion source is N2POCL3, the flow rate of the diffusion source is 0.8-1slm, the deposition time is 10-15min, and the selection is carried out according to actual requirements, and no specific requirement is made here. And when constant source diffusion is carried out, the temperature of the diffusion furnace is maintained at the diffusion temperature, phosphorus source deposition is carried out, and phosphorus atoms enter the monocrystalline silicon piece.
S33: high-temperature propulsion, the formation of PN junction is facilitated: specifically, in the high-temperature propelling step, the temperature of the diffusion furnace is raised to the propelling temperature, nitrogen is introduced, and propelling is carried out according to the propelling time, so that phosphorus atoms are diffused to the deep part of the monocrystalline silicon wafer again, and finally a deeper and uniform PN junction is formed, wherein the propelling temperature is 840-860 ℃, the nitrogen flow is 6-8slm, and the propelling time is 10-15 min. When the high-temperature propulsion is carried out, the temperature of the diffusion furnace is increased and is maintained after being increased to the propulsion temperature, so that the high-temperature propulsion is convenient.
S34: high-temperature source connection, diffusion source supplement: specifically, in the step, the temperature of the diffusion furnace is kept according to the propelling temperature, nitrogen, oxygen and a diffusion source are introduced, and deposition is carried out according to the high-temperature deposition time, so as to carry out deposition of the phosphorus source, wherein the propelling temperature is 840-860 ℃, the nitrogen flow is 6-8slm, the oxygen flow is 0.1-0.2slm, the diffusion source flow is 0.1-0.3slm, and the high-temperature deposition time is 2-5min, which are selected according to actual requirements, and are not specifically required.
S35: and (2) performing two-step junction pushing to form a phosphorosilicate glass layer: specifically, in the two-step push-junction step, the temperature of the diffusion furnace is kept according to the push temperature, nitrogen is introduced, and pushing is carried out according to the push-junction time, a phosphorus source glass layer and a shallow PN junction are formed on the surface of the monocrystalline silicon piece, the push temperature is 840-860 ℃, the nitrogen flow is 6-8slm, the push-junction time is 3-5min, and the selection is carried out according to actual requirements, wherein no specific requirement is made here.
S36: cooling and discharging: specifically, in the step of cooling and discharging, the temperature of the diffusion furnace is reduced to the discharging temperature, and the boat is discharged, wherein the discharging temperature is 740-.
And (5) carrying out the uniformity test of the monocrystalline silicon wafer, and carrying out the next working procedure.
Example one
The silicon wafer of 210x210mm is taken as an example for explanation.
Cutting the silicon wafer after texturing, and dividing the silicon wafer after texturing into two parts: cutting a 210x210mm silicon wafer, cutting the silicon wafer by adopting laser, and cutting the silicon wafer into 210x105mm half silicon wafers;
loading half silicon wafers in a vertical mode: inserting a half silicon wafer into the quartz boat, loading the half silicon wafer on the quartz boat, and inserting the half silicon wafer into the quartz boat in a vertical mode, namely, the half silicon wafer is vertical to the length direction of the quartz boat; and (4) placing the quartz boat after the insertion into a diffusion furnace for diffusion.
During diffusion, placing a quartz boat loaded with half silicon wafers into a diffusion furnace, placing the quartz boat into the diffusion furnace, raising the temperature in the diffusion furnace to 760 ℃, keeping the temperature for 5min, introducing nitrogen gas into the diffusion furnace for 16slm, and stabilizing the surface temperature of the silicon wafers;
after the temperature is stable, introducing oxygen 1slm and nitrogen 16slm, and carrying out surface oxidation on the half-chip silicon wafer for 3min to form a silicon dioxide oxide layer with the thickness of about 3-5nm on the surface of the silicon wafer;
stabilizing the temperature of the diffusion furnace to 760 ℃, introducing nitrogen and oxygen, wherein the flow rate of the nitrogen is 8slm, the flow rate of the oxygen is 1slm, and a diffusion source N is2The flow rate of the POCL3 is 0.8slm, a phosphorus source is deposited on the surface of a half silicon wafer, the deposition time is 10min, and phosphorus atoms enter the silicon wafer;
heating the diffusion furnace to 840 ℃, wherein only nitrogen is introduced at the high temperature without introducing a phosphorus source, the flow rate of the nitrogen is 6slm, performing high-temperature propulsion, the propulsion time is 10min, and diffusing phosphorus atoms on the surface to the deep part of the half silicon wafer again to finally form a deeper and uniform PN junction;
maintaining the temperature of a diffusion furnace at 840 ℃, introducing nitrogen, oxygen and a diffusion source, wherein the flow of the nitrogen is 6slm, the flow of the oxygen is 0.1slm, and the flow of the diffusion source is 0.1slm, performing diffusion source supplement, and depositing a phosphorus source on the surface of a silicon wafer, wherein the high-temperature deposition time is 2 min;
maintaining the temperature of the diffusion furnace at 840 ℃, introducing nitrogen at constant temperature, wherein the flow rate of the nitrogen is 6slm, performing high-temperature junction pushing for 3min, and forming a phosphorus source glass layer and a shallower PN junction on the surface;
and reducing the temperature of the diffusion furnace, and reducing the temperature of the diffusion furnace to 740 ℃ for discharging.
Example two
The silicon wafer of 210x210mm is taken as an example for explanation.
Cutting the silicon wafer after texturing, and dividing the silicon wafer after texturing into two parts: cutting a 210x210mm silicon wafer, cutting the silicon wafer by adopting laser, and cutting the silicon wafer into 210x105mm half silicon wafers;
loading half silicon wafers in a vertical mode: inserting a half silicon wafer into the quartz boat, loading the half silicon wafer on the quartz boat, and inserting the half silicon wafer into the quartz boat in a vertical mode, namely, the half silicon wafer is vertical to the length direction of the quartz boat; and (4) placing the quartz boat after the insertion into a diffusion furnace for diffusion.
During diffusion, putting the quartz boat loaded with the half silicon wafers into a diffusion furnace, heating the temperature in the diffusion furnace to 780 ℃, keeping the temperature for 8min, and introducing 20slm of nitrogen to stabilize the surface temperature of the silicon wafers;
after the temperature is stable, introducing 3slm of oxygen and 20slm of nitrogen, and oxidizing the surface of the half silicon wafer for 5min to form a silicon dioxide oxide layer with the thickness of about 3-5nm on the surface of the half silicon wafer;
stabilizing the temperature of the diffusion furnace to 780 ℃, introducing nitrogen and oxygen, wherein the flow rate of the nitrogen is 10slm, the flow rate of the oxygen is 1.3slm, and a diffusion source N is2The flow rate of the POCL3 is 1slm, a phosphorus source is deposited on the surface of a half silicon wafer, the deposition time is 15min, and phosphorus atoms enter the silicon wafer;
heating the diffusion furnace to 860 ℃, only introducing nitrogen at a high temperature without introducing a phosphorus source, wherein the flow rate of the nitrogen is 8slm, performing high-temperature propulsion, the propulsion time is 15min, and diffusing phosphorus atoms on the surface to the deep part of the half silicon wafer again to finally form a deeper and uniform PN junction;
maintaining the temperature of a diffusion furnace at 860 ℃, introducing nitrogen, oxygen and a diffusion source, wherein the flow of the nitrogen is 8slm, the flow of the oxygen is 0.2slm, and the flow of the diffusion source is 0.3slm, performing diffusion source supplement, and depositing a phosphorus source on the surface of a silicon wafer, wherein the high-temperature deposition time is 5 min;
maintaining the temperature of the diffusion furnace at 860 ℃, introducing nitrogen at a constant temperature, wherein the flow rate of the nitrogen is 8slm, performing high-temperature junction pushing for 5min, and forming a phosphorus source glass layer and a shallower PN junction on the surface;
and reducing the temperature of the diffusion furnace to 760 ℃ and taking out.
EXAMPLE III
The silicon wafer of 210x210mm is taken as an example for explanation.
Cutting the silicon wafer after texturing, and dividing the silicon wafer after texturing into two parts: cutting a 210x210mm silicon wafer, cutting the silicon wafer by adopting laser, and cutting the silicon wafer into 210x105mm half silicon wafers;
loading half silicon wafers in a vertical mode: inserting a half silicon wafer into the quartz boat, loading the half silicon wafer on the quartz boat, and inserting the half silicon wafer into the quartz boat in a vertical mode, namely, the half silicon wafer is vertical to the length direction of the quartz boat; and (4) placing the quartz boat after the insertion into a diffusion furnace for diffusion.
During diffusion, putting the quartz boat loaded with the half silicon wafers into a diffusion furnace, heating the temperature in the diffusion furnace to 770 ℃, keeping the temperature for 6min, and introducing 18slm nitrogen to stabilize the surface temperature of the silicon wafers;
after the temperature is stable, introducing oxygen 2slm and nitrogen 18slm, and carrying out surface oxidation on the half-chip silicon wafer for 4min to form a silicon dioxide oxide layer with the thickness of about 3-5nm on the surface of the silicon wafer;
stabilizing the temperature of the diffusion furnace to 770 ℃, introducing nitrogen and oxygen, wherein the flow rate of the nitrogen is 9slm, the flow rate of the oxygen is 1.2slm, and a diffusion source N is2The flow rate of the POCL3 is 0.9slm, a phosphorus source is deposited on the surface of a half silicon wafer, the deposition time is 13min, and phosphorus atoms enter the silicon wafer;
heating the diffusion furnace to 850 ℃, wherein at high temperature, only introducing nitrogen instead of a phosphorus source at a flow rate of 7slm, performing high-temperature propulsion for 13min, and diffusing phosphorus atoms on the surface to the deep part of the half silicon wafer to finally form a deeper and uniform PN junction;
maintaining the temperature of a diffusion furnace at 850 ℃, introducing nitrogen, oxygen and a diffusion source, wherein the flow of the nitrogen is 7slm, the flow of the oxygen is 0.15slm, and the flow of the diffusion source is 0.2slm, performing diffusion source supplement, and depositing a phosphorus source on the surface of a silicon wafer, wherein the high-temperature deposition time is 4 min;
maintaining the temperature of the diffusion furnace at 850 ℃, introducing nitrogen at constant temperature, wherein the flow rate of the nitrogen is 7slm, performing high-temperature junction pushing for 4min, and forming a phosphorus source glass layer and a shallower PN junction on the surface;
and reducing the temperature of the diffusion furnace to 750 ℃ and taking out the boat.
By adopting the technical scheme, the temperature stabilizing process is adopted, so that the temperature of the diffusion furnace is at the diffusion temperature, the temperature difference between the center and the edge of the silicon wafer is reduced, and the uniformity of the silicon wafer is good due to the introduction of the reaction gas; adopting a small source to slowly diffuse at low temperature for a long time, uniformly distributing the small source on the surface layer of the silicon wafer, and reducing the surface concentration by high-temperature rapid propulsion; and a small amount of source supplement is carried out on the surface to obtain ohmic contact with printing, a normal-pressure diffusion furnace is used, the uniformity after diffusion is controllable, and the conversion efficiency of the single crystal solar cell is improved.
By adopting the technical scheme, the quartz boat has a simple structure, is convenient to use, can be adjusted according to different sizes of silicon wafers, and meets the requirements of inserting pieces of the silicon wafers with different sizes; meanwhile, the quartz boat is divided into a plurality of spaces by the reinforcing parts, so that silicon wafer inserting is conveniently carried out in a vertical mode, and the existing diffusion furnace can meet the requirements of large-size silicon wafer diffusion production; the existing solar production diffusion furnace tube is not required to be modified, only the quartz boat is required to be modified, and the modification cost is low; the diffusion capacity is not greatly lost, and the manufacturing process of the produced battery piece is not influenced.
The embodiments of the present invention have been described in detail, but the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (10)
1. A quartz boat for diffusion of a stack tile and half large-size silicon wafer battery is characterized in that: comprises a quartz boat body, a supporting piece, a reinforcing piece and a locking piece, wherein,
the supporting piece is detachably connected with the quartz boat body, can move relative to the reinforcing piece and is locked by the locking piece, and is arranged at the bottom of the quartz boat body so as to be convenient for supporting a silicon wafer;
the reinforcing piece is detachably connected with the quartz boat body, the reinforcing piece can move relative to the quartz boat body and is locked by the locking piece, and the reinforcing piece and the supporting piece are arranged in parallel, so that the silicon wafer can be conveniently positioned when being inserted;
the supporting piece and the reinforcing piece are both provided with clamping teeth, and the clamping teeth on the supporting piece correspond to the clamping teeth on the reinforcing piece one by one; and the number of the first and second groups,
the latch comprises a connecting part and a supporting part, and the connecting part is connected with the supporting part.
2. The quartz boat for diffusion of stacked, half-size silicon wafer cells as claimed in claim 1, wherein: the quantity of reinforcement is a plurality of, and is a plurality of the reinforcement is along the length direction of quartz boat body sets gradually, just the reinforcement can for the quartz boat body removes, and is adjacent the reinforcement opposite face all is equipped with the latch is convenient for spread not unidimensional silicon chip.
3. The quartz boat for diffusion of stacked, half-size silicon wafer cells as claimed in claim 2, wherein: the reinforcing piece comprises a connecting rod, the two ends of the connecting rod are respectively in sliding connection with the quartz boat body, and the locking piece is connected with one end of the connecting piece, so that the reinforcing piece is locked on the quartz boat body conveniently.
4. The quartz boat for diffusion of stacked, half-size silicon wafer cells according to claim 2 or 3, wherein: and at least one supporting piece is arranged between the adjacent reinforcing pieces, and one end of each supporting piece is connected with the locking piece, so that the supporting pieces are conveniently locked on the quartz boat body.
5. The quartz boat for diffusion of stacked, half-size silicon wafer cells as claimed in claim 4, wherein: the reinforcing piece and the supporting piece are both perpendicular to the length direction of the quartz boat body.
6. The quartz boat for diffusion of stacked, half-size silicon wafer cells as claimed in claim 5, wherein: the connecting portion include card post and card post supporting part, card post supporting part symmetry is located the both sides of card post.
7. The quartz boat for diffusion of stacked, half-size silicon wafer cells as claimed in claim 6, wherein: the clamping column supporting part protrudes out of the side wall of the clamping column.
8. The quartz boat for diffusion of laminated, semi-large size silicon wafer cells according to any one of claims 4 to 6, wherein: the distance between the adjacent clamping teeth is 2.18-2.58 mm.
9. A diffusion method for a laminated tile and half large-size silicon wafer battery is characterized by comprising the following steps: comprises the following steps of (a) carrying out,
s1: cutting the silicon wafer after texturing, and dividing the silicon wafer after texturing into two parts to form a half silicon wafer;
s2: loading the half silicon wafer in a vertical mode;
s3: and (3) performing diffusion:
s30: stabilizing the surface temperature of the half silicon wafer and reducing the temperature difference between the center and the edge of the silicon wafer;
s31: preparing an oxide layer, and oxidizing the surface of the half silicon wafer;
s32: low-temperature constant source diffusion is carried out, and a phosphorus source is deposited on the surface of the half silicon wafer;
s33: high-temperature propulsion is carried out, so that PN junctions are conveniently formed;
s34: high-temperature source communication is carried out, and diffusion source supplement is carried out;
s35: secondly, pushing the junction to form a phosphorosilicate glass layer;
s36: and (6) cooling and discharging.
10. The diffusion process for a stack of tiled, half-size silicon wafer cells according to claim 9, wherein: in the step S30, the temperature of the diffusion furnace is raised, nitrogen is introduced, and the temperature is maintained, wherein the temperature of the diffusion furnace is raised to the diffusion temperature, the diffusion temperature is 760-.
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| CN114122190A (en) * | 2021-10-14 | 2022-03-01 | 山西潞安太阳能科技有限责任公司 | Method for improving monocrystalline PERC thermal oxidation process by normal pressure diffusion equipment |
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| CN114122190A (en) * | 2021-10-14 | 2022-03-01 | 山西潞安太阳能科技有限责任公司 | Method for improving monocrystalline PERC thermal oxidation process by normal pressure diffusion equipment |
| CN114122190B (en) * | 2021-10-14 | 2023-12-26 | 山西潞安太阳能科技有限责任公司 | Transformation method for realizing monocrystalline PERC (PERC) thermal oxidation process by normal pressure diffusion equipment |
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