CN113076023B - Display substrate, manufacturing method and display device - Google Patents
Display substrate, manufacturing method and display device Download PDFInfo
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- CN113076023B CN113076023B CN202110264746.3A CN202110264746A CN113076023B CN 113076023 B CN113076023 B CN 113076023B CN 202110264746 A CN202110264746 A CN 202110264746A CN 113076023 B CN113076023 B CN 113076023B
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- 239000000758 substrate Substances 0.000 title claims abstract description 82
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 230000008859 change Effects 0.000 claims abstract description 7
- 239000010409 thin film Substances 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 7
- 239000004973 liquid crystal related substance Substances 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 8
- 230000000903 blocking effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
- G06F3/0418—Control or interface arrangements specially adapted for digitisers for error correction or compensation, e.g. based on parallax, calibration or alignment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
Abstract
The embodiment of the application provides a display substrate, a manufacturing method and a display device, the display substrate comprises a substrate and a plurality of photoelectric sensing devices arranged on the substrate in an array mode, and the photoelectric sensing devices generate touch signals based on light change. In the display substrate provided by the embodiment of the application, the photoelectric sensing device is adopted to realize touch detection, and compared with a touch scheme in the prior art, the photoelectric sensing device is less influenced by the environment and the screen size, and the reliability and the accuracy of touch identification are ensured. Moreover, the volume of the photoelectric sensing device is smaller, and the blocking taking the photoelectric sensing device as a unit can realize more accurate touch positioning.
Description
Technical Field
The embodiment of the application relates to the technical field of display devices, in particular to a display substrate, a manufacturing method and a display device.
Background
According to the touch principle, common touch screens can be divided into infrared touch screens and capacitive touch function screens. The infrared touch screen belongs to optical touch control, infrared receiving tubes and infrared transmitting tubes are fully distributed around the screen, and the infrared receiving tubes and the infrared transmitting tubes are arranged on the surface of the screen in a one-to-one corresponding position relationship, so that an optical network formed by a plurality of infrared rays is formed. When a user touches the screen, the finger can block at least two infrared rays passing through the position, so that the position of the touch point on the screen can be judged by analyzing the infrared receiving tube which does not receive the infrared rays. However, the infrared touch screen is unfavorable for the design of ultrathin and narrow frames due to the fact that a large number of infrared receiving tubes and infrared transmitting tubes are required to be added at the peripheral frame of the screen.
The capacitive Touch screen comprises Touch capacitive sensors (Touch sensors) arranged in an array and Touch lines (Touch lines) connected with the Touch capacitive sensors. When a user touches the touch screen, the capacitance of the touch capacitive sensor positioned at the touch point can be changed, and the position of the touch point on the touch screen can be detected according to the changed capacitance of the touch capacitive sensor. However, capacitive touch screens are susceptible to the influence of application environments, and when the temperature, humidity and electric field of the surrounding environment change, the capacitive touch screens can drift, so that inaccurate touch is caused. In addition, the common voltage Vcom is liable to be insufficient in supply at the far end, particularly when the screen size is large, so that a defect of poor touch is liable to be caused.
Therefore, it can be seen that the above touch screen has certain limitations.
Disclosure of Invention
In view of the above, an object of the embodiments of the present application is to provide a display substrate, a manufacturing method and a display device.
In a first aspect, an embodiment of the present application provides a display substrate, including a substrate and a plurality of photo-sensing devices disposed in an array on the substrate, where the photo-sensing devices generate a touch signal based on a light change.
In the display substrate provided by the embodiment of the application, the photoelectric sensing device is adopted to realize touch detection, and compared with a touch scheme in the prior art, the photoelectric sensing device is less influenced by the environment and the screen size, and the reliability and the accuracy of touch identification are ensured. In addition, the photoelectric sensing device is small in size, and more accurate touch control positioning can be realized by taking the photoelectric sensing device as a block of units
In one possible implementation manner, the display substrate is further provided with a thin film transistor and a gate line connected with the thin film transistor on the substrate, the photoelectric sensing device is connected with the gate line, and the gate line is multiplexed into a signal line connected with the photoelectric sensing device.
In one possible implementation manner, the photoelectric sensing device is a PIN device, and the PIN device includes a first device electrode, an N-type semiconductor, an intrinsic semiconductor, a P-type semiconductor and a second device electrode which are sequentially arranged, and the first device electrode or the second device electrode is connected with the gate line.
In one possible implementation manner, the thin film transistor comprises a data line and a touch control line which are arranged to cross the grid line, the thin film transistor is connected between the grid line and the data line, and the PIN device is connected between the grid line and the touch control line.
In one possible implementation manner, the first device electrode is connected with the gate line, and the second device electrode is connected with the touch control line; the conducting voltage of the PIN device is smaller than the difference value between the high-level voltage of the grid electrode and the touch line voltage.
In one possible implementation manner, the touch control line is arranged in parallel with the data line, and the thin film transistor and the PIN device are arranged between the data line and the touch control line.
In one possible embodiment, the thin film transistor includes a gate electrode, a source electrode, and a drain electrode, the drain electrode is connected to a pixel electrode, and one of the first device electrode and the second device electrode, which is remote from the substrate, is made of the same material as the pixel electrode.
In one possible embodiment, the thin film transistor is a bottom gate type, and one of the first device electrode and the second device electrode, which is close to the substrate, and the gate electrode are made of the same material.
In one possible embodiment, the thin film transistor and the PIN device are made of the same semiconductor material, which is low temperature polysilicon, amorphous silicon, or oxide semiconductor.
In a second aspect, an embodiment of the present application provides a method for manufacturing a display substrate, including:
Obtaining a substrate base plate;
and manufacturing a photoelectric sensing device on the substrate.
In one possible implementation, a gate line, a data line, a touch line, and a thin film transistor connected between the gate line and the data line are fabricated on the substrate base plate;
The manufacturing of the photoelectric sensing device on the substrate base plate comprises the following steps:
And manufacturing a PIN device connected between the grid line and the touch control line.
In one possible embodiment, the thin film transistor includes a gate layer, a gate insulating layer, an active layer, and a source/drain layer stacked from the substrate, wherein a source electrode of the source/drain layer is connected to the data line, and a drain electrode of the source/drain layer is connected to the pixel electrode; the PIN device comprises a first device electrode, a PIN structure layer and a second device electrode which are stacked from the substrate;
The manufacturing method comprises the following steps:
Forming the gate layer, the gate line and the first device electrode through a one-time patterning process;
And/or
Forming at least one of the active layer and the PIN structure layer through a one-time patterning process, wherein the PIN structure layer comprises an N-type semiconductor layer, an intrinsic semiconductor layer and a P-type semiconductor layer;
And/or
Forming the pixel electrode and the second device electrode through a one-time patterning process;
And/or
And forming the data line and the touch control line through a one-time composition process.
In a third aspect, an embodiment of the present application also provides a display apparatus, including a control chip and a display substrate in the embodiment of the first aspect, where the control chip is in signal connection with a photo-electric sensing device in the display substrate.
In one possible embodiment, the display device is a liquid crystal display, or an organic light emitting diode display.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the related art, the drawings that are required to be used in the embodiments or the related technical descriptions will be briefly described, and it is apparent that the drawings in the following description are only one or more embodiments of the present application, and other drawings may be obtained according to the drawings without inventive effort for those skilled in the art.
FIG. 1 is an equivalent circuit diagram of a display substrate according to an embodiment of the present application;
FIG. 2 is an equivalent circuit diagram of a corresponding single pixel in FIG. 1;
Fig. 3 is a schematic cross-sectional view of a display substrate according to an embodiment of the present application.
Reference numerals illustrate:
1-substrate base plate, 2-data line, 3-thin film transistor, 4-gate electrode layer, 5-gate insulating layer, 6-PIN device, 7-first device electrode, 8-N type semiconductor, 9-touch line, 10-intrinsic semiconductor, 11-P type semiconductor, 12 second device electrode, 13-source drain layer, 14-active layer, 15-passivation layer.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The embodiment of the application provides a display device, which comprises a display substrate and a pixel array, wherein a driving circuit for driving the pixel array to display is arranged on the display substrate. The display device adopts In-Cell touch technology, and the touch circuit is also arranged on the display substrate.
Fig. 1 is an equivalent circuit diagram of a display substrate provided in an embodiment of the present application, where, as shown in fig. 1, the display substrate includes a substrate, and Gate lines Gate, data lines Data, touch lines Touch, thin film transistors TFT and PIN devices disposed on the substrate, where the Gate lines Gate extend along a first direction, a plurality of Gate lines Gate1-Gate3 are uniformly arranged along a second direction, the first direction and the second direction are mutually perpendicular, and the first direction is a transverse direction and the second direction is a longitudinal direction, taking the azimuth shown in fig. 1 as an example.
The Data lines Data extend in the second direction, and the plurality of Data lines Data1 to Data3 are uniformly arranged in the first direction. The Gate line Gate and the Data line Data vertically cross. The Touch lines Touch1-Touch3 are uniformly arranged along the first direction, that is, the Touch lines Touch correspond to the Data lines Data in parallel.
A thin film transistor TFT is disposed at the crossing position of the Gate line Gate and the Data line Data, a PIN device is disposed at the crossing position of the Gate line Data and the Touch line Touch, fig. 2 is an equivalent circuit diagram of a corresponding single pixel in fig. 1, as shown in fig. 1 and 2,
The thin film transistor TFT comprises a grid G, a source S and a drain D, wherein the grid G is connected with a grid line Gate, the source S is connected with a Data line Data, the drain S is connected with a Pixel electrode Pixel, and the display of a Pixel corresponding to the Pixel electrode Pixel can be controlled through the Pixel electrode Pixel by controlling the switch of the thin film transistor TFT.
The PIN device is arranged on one side of the thin film transistor TFT and comprises a first device electrode, a PIN structure layer and a second device electrode, wherein the first device electrode is connected with the Gate line Gate, and the second device electrode is connected with the Touch line Touch. That is, the Gate line Gate is multiplexed as a signal line connected to the PIN device.
The first device electrode may be an anode or a cathode, and the second device electrode may be a cathode or an anode, respectively, depending on the PIN structure layer. In this embodiment, the PIN structure layer includes an N-type semiconductor, an intrinsic semiconductor, and a P-type semiconductor disposed between a first device electrode and a second device electrode, where the first device electrode is an anode, and the second device electrode is a cathode. And, the on voltage of the PIN device is smaller than the difference between the high level voltage of the gate and the touch line voltage, that is, the PIN device is in an on state when the gate inputs high level, and in an off state when the gate inputs low level.
The display device further comprises TDDI (Touch AND DISPLAY DRIVER Integration) chips, the TDDI chips are used for display driving and Touch detection, the Gate lines Gate, touch lines Touch and Data lines Data are connected with the TDDI chips at the periphery of the display area, and the TDDI chips can detect real-time Touch states and specific information of Touch coordinate positions of the display device.
The control principle of the display device is as follows:
The Touch control line Touch inputs a fixed voltage (such as 22V) which is smaller than the high level signal voltage (such as 24V) of the Gate line Gate, and the difference value between the fixed voltage and the high level signal voltage of the Gate line Gate can enable the PIN device to be conducted.
When a high-level signal is input to a certain Gate line Gate, the PIN device is conducted, so that a current flowing from the Gate line Gate to the Touch line Touch is generated; when a finger touches the screen, the PIN device is shielded, so that the current passing through the PIN device is correspondingly reduced due to the reduction of illumination intensity, the current of the Touch line Touch is changed at the moment, the TDDI chip reads the current change of the corresponding Touch line Touch, and the Touch position can be accurately positioned in a Touch manner according to Gate and Touch line Touch.
When a low-level signal (such as-8V) is input to a certain Gate line Gate, the PIN device is not conducted, namely the touch control is not operated.
As can be seen from the above description, the touch design using the In-Cell has at least the following advantages:
Firstly, by adopting the circuit structure, the display driving and the touch detection can synchronously work, namely, the touch circuit for touch detection works while the driving circuit for driving the display works; the touch control circuit for touch control detection stops working at the same time of stopping the driving circuit for driving the display. Compared with the time-sharing multiplexing display touch scheme in the prior art, the design has the advantages that the synchronism of touch detection and display control and the accuracy of touch control are greatly improved.
Secondly, accurate touch positioning taking pixel size (Dot) as a unit and high-response-speed touch can be realized by adopting the PIN device array.
Thirdly, the voltage drop of the grid line and the touch line does not influence the conduction of the PIN device, so that even at the far end of the display screen, the PIN device can realize normal touch detection only by conduction, the problem of poor touch is avoided, and the like, thereby being suitable for large-size touch screens and large-size spliced screens.
Thirdly, the circuit wiring can be reduced by sharing the grid line, so that the aperture opening ratio is improved; moreover, the method is also applicable to the field of the present invention. The simplification of circuit lines can reduce wiring space, thereby realizing the design beneficial to narrow edges.
In the above embodiments, the PIN device is taken as an example for description, but the embodiments of the present application are not limited thereto, and other photo-sensing devices capable of generating an electrical signal change based on a light change may be used, for example: PN type devices, avalanche type devices, gaAsP type devices, and the like.
The embodiment of the application provides a manufacturing method of a display substrate, which comprises the following steps:
Obtaining a substrate base plate;
and manufacturing a photoelectric sensing device on the substrate.
Further, manufacturing a grid line, a data line, a touch control line and a thin film transistor connected between the grid line and the data line on the substrate;
Fabricating a photo-sensing device on a substrate, comprising:
and manufacturing a PIN device connected between the grid line and the touch control line.
In the embodiment of the application, the thin film transistor TFT can be of a top gate type, a bottom gate type or a double gate type, and semiconductor materials in the PIN device and the thin film transistor can also be low-temperature polysilicon, amorphous silicon or oxide semiconductor.
However, in the manufacturing process of the display substrate, the structures and the materials of the thin film transistor TFT and the PIN device can be adjusted, so that the PIN device and the thin film transistor can have more structures and can be prepared from the same layer and the same material, and the purpose of improving the manufacturing efficiency is achieved.
For example, fig. 3 is a cross-sectional view of a display substrate provided in the embodiment of the present application, as shown in fig. 3, including a substrate 1, and a thin film transistor 3 and a PIN device 6 disposed on the substrate 1; the thin film transistor 3 and the PIN device 6 are both a-Si based devices.
The thin film transistor is a bottom gate type, and includes a gate layer 4, a gate insulating layer 5, an active layer 14, a source/drain layer 13, and a passivation layer 15 stacked from a substrate 1. The PIN device 6 includes a first device electrode 7, an N-type semiconductor 8, an intrinsic semiconductor 10, a P-type semiconductor 11, and a second device electrode 12, which are disposed in this order from the substrate 1.
The substrate 1 is also provided with a grid line, a data line 2 and a touch control line 9, wherein the grid line is connected with the grid electrode and the first device electrode 7, the data line 2 is positioned at one side of the thin film transistor 3 far away from the PIN device 6 and is connected with the source electrode; the drain electrode of the thin film transistor 6 is connected to the pixel electrode. The touch line 9 is located at a side of the PIN device 6 away from the thin film transistor 3, and the second device electrode 12 is connected to the touch line 9.
The base method of the display substrate comprises the following steps:
Providing a substrate
Manufacturing a grid layer, a grid line and a first device electrode of a PIN device on a substrate;
manufacturing a gate insulating layer on the gate layer;
Manufacturing an active layer on the manufactured gate insulating layer, and manufacturing a PIN structure layer on the first device electrode;
Manufacturing a data line, a source drain layer and a touch control line;
forming a passivation layer and a via hole communicated with the touch line;
forming a pixel electrode connected with the drain electrode in the source drain layer and a second device electrode of the PIN device; and connecting the second device electrode and the touch line through the via hole to finish the manufacture of the substrate.
In the manufacturing process, the grid layer, the grid line and the first device electrode are manufactured by the same material;
the active layer and the PIN structure layer are made of the same material;
The pixel electrode and the second device electrode are made of the same material;
the data line, the source drain layer and the touch line are made of the same material.
The same layer and material are formed by one patterning process.
The display device provided by the embodiment of the application can be a Liquid Crystal Display (LCD), and the LCD comprises an array substrate, a color film substrate and a Liquid crystal layer arranged between the array substrate and the color film substrate. The display substrate is the array substrate. The array substrate is provided with a driving circuit for controlling the display of the display device, and the driving circuit achieves the aim of controlling the display of each pixel point by controlling the rotation direction of liquid crystal molecules in the liquid crystal layer.
In another embodiment, the display device provided by the embodiment of the application may be an organic light emitting semiconductor (OrganicElectroluminesence Display, OLED) display screen, where the display device includes an organic light emitting layer above a display substrate, and a pixel electrode in the display substrate may be used as an anode or an anode of the organic light emitting layer.
In the description of the embodiments of the present application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," and the like indicate an orientation or a positional relationship based on that shown in the drawings, and are merely for convenience of description and to simplify the description, and do not indicate or imply that the apparatus or elements to be referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In describing embodiments of the present application, it should be noted that, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "connected" should be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in embodiments of the present application will be understood in detail by those of ordinary skill in the art.
Furthermore, the technical features mentioned in the different embodiments of the application described above can be combined with one another as long as they do not conflict with one another.
Thus far, the technical solution of the present application has been described in connection with the preferred embodiments shown in the drawings, but it is easily understood by those skilled in the art that the scope of protection of the present application is not limited to these specific embodiments. Equivalent modifications and substitutions for related technical features may be made by those skilled in the art without departing from the principles of the present application, and such modifications and substitutions will fall within the scope of the present application.
Claims (12)
1. A display substrate, characterized in that: the touch control device comprises a substrate and a plurality of photoelectric sensing devices arranged on the substrate in an array manner, wherein the photoelectric sensing devices generate touch control signals based on light change; the display substrate is also provided with a thin film transistor and a grid line connected with the thin film transistor, and comprises a data line and a touch control line which are arranged in a crossing way with the grid line;
the photoelectric sensing device is a PIN device which comprises a first device electrode, an N-type semiconductor, an intrinsic semiconductor, a P-type semiconductor and a second device electrode which are sequentially arranged, and the PIN device is connected between the grid line and the touch control line;
The first device electrode is connected with the grid line, and the second device electrode is connected with the touch control line; the conducting voltage of the PIN device is smaller than the difference value between the high-level voltage of the grid line and the touch line voltage.
2. The display substrate of claim 1, wherein: the grid lines are multiplexed into signal lines connected with the photoelectric sensing devices.
3. The display substrate of claim 1, wherein: the thin film transistor is connected between the gate line and the data line.
4. The display substrate of claim 1, wherein: the touch control line is parallel to the data line, and the thin film transistor and the PIN device are arranged between the data line and the touch control line.
5. The display substrate of claim 1, wherein: the thin film transistor comprises a grid electrode, a source electrode and a drain electrode, wherein the drain electrode is connected with a pixel electrode, and one of the first device electrode and the second device electrode, which is far away from the substrate base plate, and the pixel electrode are made of the same material.
6. The display substrate of claim 5, wherein: the thin film transistor is a bottom gate type, and one of the first device electrode and the second device electrode, which is close to the substrate, and the gate electrode are made of the same material.
7. The display substrate of claim 1, wherein: the thin film transistor and the PIN device are made of the same semiconductor material, and the semiconductor material is low-temperature polycrystalline silicon, amorphous silicon or oxide semiconductor.
8. A manufacturing method of a display substrate is characterized in that:
Obtaining a substrate base plate;
manufacturing a photoelectric sensing device on the substrate;
Manufacturing a grid line, a data line, a touch line and a thin film transistor on the substrate; the thin film transistor comprises a grid layer, a grid insulating layer, an active layer and a source-drain layer which are stacked from the substrate, wherein a source electrode in the source-drain layer is connected with the data line, and a drain electrode is connected with the pixel electrode;
wherein, the manufacturing of the photoelectric sensing device on the substrate base plate comprises the following steps:
Manufacturing a PIN device connected between the grid line and the touch control line; the PIN device comprises a first device electrode, a PIN structure layer and a second device electrode which are stacked from the substrate base plate; the PIN structure layer comprises an N-type semiconductor layer, an intrinsic semiconductor layer and a P-type semiconductor layer.
9. The method of claim 8, wherein the thin film transistor is connected between the gate line and the data line.
10. The method of manufacturing according to claim 9, further comprising:
Forming the gate layer, the gate line and the first device electrode through a one-time patterning process;
And/or
Forming at least one of the active layer and the PIN structure layer through a one-time patterning process,
And/or
Forming the pixel electrode and the second device electrode through a one-time patterning process;
And/or
And forming the data line and the touch control line through a one-time composition process.
11. A display device, characterized in that: comprising a control chip and the display substrate of any one of claims 1-7, said control chip being in signal connection with a photo-sensing device in said display substrate.
12. The display device according to claim 11, wherein: the display device is a liquid crystal display screen or an organic light emitting diode display screen.
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| CN102997993A (en) * | 2011-09-09 | 2013-03-27 | 三星电子株式会社 | Light-sensing apparatus, method of driving the light-sensing apparatus, and optical touch screen apparatus including the light-sensing apparatus |
| CN107422560A (en) * | 2017-09-04 | 2017-12-01 | 京东方科技集团股份有限公司 | A kind of array base palte, its detection method and display device |
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| CN103500747B (en) * | 2013-09-30 | 2017-01-25 | 京东方科技集团股份有限公司 | Array substrate, array substrate driving method and display device |
| KR102636734B1 (en) * | 2016-09-07 | 2024-02-14 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
| CN109145775B (en) * | 2018-08-02 | 2021-02-26 | 武汉华星光电技术有限公司 | Display panel and display device |
| CN109360838B (en) * | 2018-09-26 | 2022-04-26 | 京东方科技集团股份有限公司 | Sensing and controlling display panel and sensing and controlling display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102997993A (en) * | 2011-09-09 | 2013-03-27 | 三星电子株式会社 | Light-sensing apparatus, method of driving the light-sensing apparatus, and optical touch screen apparatus including the light-sensing apparatus |
| CN107422560A (en) * | 2017-09-04 | 2017-12-01 | 京东方科技集团股份有限公司 | A kind of array base palte, its detection method and display device |
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