CN113075865B

CN113075865B - Apparatus and method for processing semiconductor substrate

Info

Publication number: CN113075865B
Application number: CN202010011091.4A
Authority: CN
Inventors: 梁贤石; 金帅炯; 金成昱; 权炳仁
Original assignee: Xia Tai Xin Semiconductor Qing Dao Ltd
Current assignee: Xia Tai Xin Semiconductor Qing Dao Ltd
Priority date: 2020-01-06
Filing date: 2020-01-06
Publication date: 2022-11-08
Anticipated expiration: 2040-01-06
Also published as: US11079690B2; US20210208515A1; CN113075865A

Abstract

The present invention relates to an apparatus and method for processing a semiconductor substrate. In an embodiment provided by the present invention, an apparatus for processing a semiconductor substrate is provided, the apparatus comprising a substrate carrier and a gas source. The substrate stage is used for bearing the substrate on the substrate stage, and comprises a substrate stage base and a first opening formed on the base body stage base. The first opening is an annular opening. The gas source is coupled to the first opening for supplying a first gas/air to the lower surface of the substrate through the first opening.

Description

Apparatus and method for processing semiconductor substrate

Technical Field

The present invention relates to a carrier for holding a semiconductor substrate during exposure in a photolithography process. More particularly, the present invention relates to a carrier for holding a semiconductor substrate during exposure, which does not contact the back surface of the semiconductor substrate, to prevent particles on the back surface of the semiconductor substrate from causing focus errors during exposure

Background

In general, photolithography is commonly used to form and pattern a photosensitive coating, such as a photoresist layer, on a semiconductor substrate. To achieve the above object, in photolithography, a semiconductor substrate is first coated with a photoresist material. Then, the photoresist layer is exposed to define a predetermined pattern on the photoresist layer. In the exposure process, the semiconductor substrate is transferred into an exposure apparatus (such as a stepper exposure apparatus or a scanning exposure apparatus) and is fixed on a semiconductor substrate base by vacuum. The pattern is projected onto the semiconductor substrate by a light source passing through the mask, and is imaged on the semiconductor substrate. However, particles on the backside of the substrate or on the top surface of the substrate pedestal may cause the substrate to deform when it is mounted on the substrate pedestal, and the deformation of the substrate due to the particles may cause unexpected results during exposure.

Drawings

Fig. 1 is a schematic view of an apparatus 100 for processing a semiconductor substrate in accordance with an embodiment of the present invention.

Fig. 2 is a top view of a semiconductor substrate holder according to a first embodiment of the present invention.

Fig. 3 isbase:Sub>A schematic view of the substrate carrier of fig. 2 taken alongbase:Sub>A sectionbase:Sub>A-base:Sub>A.

FIG. 4 isbase:Sub>A schematic view of the substrate holder of FIG. 2 taken along section A-A as provided in accordance withbase:Sub>A second embodiment of the present disclosure, in some embodiments provided in accordance with the present disclosure.

FIG. 5 is a top view of a substrate carrier according to a third embodiment of the present disclosure in some embodiments of the present disclosure.

FIG. 6 is a top view of a substrate carrier according to a fourth embodiment of the present disclosure, in some embodiments according to the present disclosure.

Fig. 7 is a top view of a substrate carrier according to a fifth embodiment of the present disclosure, in some embodiments according to the present disclosure.

FIG. 8 is a schematic view of the substrate holder of FIG. 7 taken along section B-B as provided by a fifth embodiment of the present disclosure in accordance with some embodiments of the present disclosure.

FIG. 9 is a top view of a substrate carrier according to a sixth embodiment of the present disclosure in some embodiments according to the present disclosure.

Figure 10 is a schematic view of the substrate carrier of figure 9 taken along the C-C cross-section according to a sixth embodiment of the present disclosure in some embodiments of the present disclosure.

FIG. 11 isbase:Sub>A schematic view of the substrate edge holder of FIG. 2 taken along section A-A as provided in accordance withbase:Sub>A second embodiment of the present disclosure, in some embodiments provided in accordance with the present disclosure.

FIG. 12 is an enlarged, partially cross-sectional view of the substrate carrier and substrate edge carrier of FIG. 11 in accordance with certain embodiments provided by the present disclosure.

FIG. 13 isbase:Sub>A schematic view of the substrate edge holder of FIG. 2 taken along section A-A in accordance withbase:Sub>A third embodiment of the present disclosure, in some embodiments in accordance with the present disclosure.

FIG. 14 is a top view of a substrate carrier according to a seventh embodiment of the present disclosure in some embodiments according to the present disclosure.

FIG. 15 is a schematic view of the substrate edge holder of FIG. 14 taken along section D-D as provided in accordance with a fourth embodiment of the present disclosure, in some embodiments provided in accordance with the present disclosure.

FIG. 16 is a flow chart of a method of processing a semiconductor substrate according to a first embodiment of the present disclosure in some embodiments according to the present disclosure.

Figure 17 is a flow chart of a method of processing a semiconductor substrate according to a second embodiment of the present disclosure in some embodiments thereof.

FIG. 18 is a flow chart of a method of processing a semiconductor substrate according to a third embodiment of the present disclosure in some embodiments according to the present disclosure.

FIG. 19 is a flowchart of a method of processing a semiconductor substrate according to a fourth embodiment of the present disclosure in some embodiments according to the present disclosure.

Description of the main elements

S semiconductor substrate

R light shield

100. Device for measuring the position of a moving object

105. Substrate carrier

110. Substrate carrying platform base

115. Substrate bearing seat

120. Substrate edge bearing seat

125. Substrate stage driving element

130. First interferometer

135. Photomask carrying platform

140. Light source

145. Lighting module

150. Projection module

155. Base of photomask carrier

160. Photomask support seat

165. Driving device for mask stage

170. Second interferometer

175. Detection element

180. Control element

210. 220, 230, 240 first opening

250. 260, 270 second opening

280. Center opening

310. 320, 330, 340 first channel

350. 360, 370 second channel

380. Central passage

390a first inlet

390b second inlet

400. Lifting part

415. Substrate bearing seat

410. 420, 430, 440 first channel

450. 460, 470 second channel

480. Central passage

500. Channel

515. Substrate bearing seat

510. 520, 530, 540 first opening

615. Substrate bearing seat

650. 660, 670 second opening

715. Substrate bearing seat

710. 720, 730, 740 first opening

Widths W71, W72, W73, W74

810. 820, 830, 840 first channel

890a first inlet

915. Substrate bearing seat

910. 920, 930, 940 first opening

Width of Wa, wb, wc, wd

1010. 1020, 1030, 1040 first channel

990a first inlet

1100. Substrate edge carrier

1110. 1120, 1130, 1140 third opening

1150. 1160, 1170, 1180 third channel

1190. Third inlet

Angle alpha

Angle of beta

1210. 1220 horizontal line

1300. Substrate edge bearing seat

1310. Third opening

1320. The fourth opening

1330. Third channel

1340. The fourth channel

1350. Third inlet

1360. The fourth inlet

1415. Substrate bearing seat

1500. Substrate edge bearing seat

1510. The fourth opening

1520. The fourth channel

1530. The fourth inlet

The following detailed description will further illustrate the invention in conjunction with the above-described figures.

Detailed Description

A non-contact semiconductor substrate carrier according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings, in which like elements are referred to by like reference numerals.

Fig. 1 is a schematic diagram of an apparatus 100 for processing a semiconductor substrate in accordance with an embodiment of the present invention. In this embodiment, the apparatus 100 is a photolithography apparatus for transferring a pattern on a mask onto a substrate. In other embodiments, the apparatus 100 is used for testing or inspecting the semiconductor substrate, for example, testing or inspecting the surface of the substrate. As shown in fig. 1, the apparatus 100 includes a substrate stage 105 for carrying a semiconductor substrate S thereon. The aforementioned substrate carrier will be described further below. The substrate carrier 105 provides a first gas/atmosphere on its surface for lifting or floating the substrate on the surface of the substrate carrier and evacuates a second gas/atmosphere along its surface to stabilize the position of the substrate above it.

In this embodiment, the substrate stage 105 comprises a substrate stage base 110, a substrate holder 115, a substrate edge holder 120, a substrate stage driving component 125, and a first interferometer 130. The substrate holder 115 is mounted on the substrate stage base 110, and supports the substrate S thereon. The substrate edge pedestal 120 is mounted on the substrate stage base 110 and is used to hold the substrate on the substrate stage base 115. In some embodiments, the substrate stage base 110 is movable in the X and Y directions, thereby moving the substrate holder 115 and the substrate edge holder 120 in the X and Y directions. In other embodiments, the substrate stage base 110 can move in the X, Y, and Z directions, thereby moving the substrate holder 115 and the substrate edge holder 120 in the X, Y, and Z directions.

The base material stage driving element 125 is connected to the substrate stage base 110, and drives the substrate stage base 110. The first interferometer 130 is located near the substrate stage base 110, and is used for tracking the position of the substrate stage base 110.

As shown in FIG. 1, the apparatus 100 further includes a mask stage 135, a light source 140, an illumination module 145, and a projection module 150. In this embodiment, the mask stage 135 includes a mask stage base 155, a mask support base 160, mask stage drivers 165, a second interferometer 170, and a detector 175. The mask support base 160 is mounted on the mask stage base 155 and supports a mask (R) thereon. In some embodiments, the mask stage base 155 is movable in the X and Y directions, thereby moving the mask support base 160 in the X and Y directions. In other embodiments, the mask stage base 155 can move in the X, Y, and Z directions, thereby moving the mask support base 160 in the X, Y, and Z directions. The mask stage driving device 165 is connected to the mask stage base 155, and drives the mask stage base 155. The second interferometer 170 is located near the mask stage base 155 and tracks the position of the mask stage base 155. The inspection device 175 is used to confirm the characteristics of the mask R, such as the shape or type of the mask R.

In some embodiments, the detecting element 175 includes a recognition element, an image sensing element, and an image processing element. The identification device is used to read the mask identification symbol (such as bar code) on the mask (R). The image sensor is used to sense the image on the mask (R). The image sensor may include an area sensor (area sensor), a reflective sensor, a camera, or the like. The image processing device is used for processing the mask mark symbols read by the identification device and the images on the mask (R) acquired by the image sensing device.

The aforementioned light source 140 is used to generate light. The illumination module 145 is used to direct the light generated by the light source 140 onto the mask (R) to generate a mask (R) image pattern. The projection module 150 is used for projecting the image pattern of the mask (R) onto the substrate (S) at a predetermined projection ratio (e.g., 1/4 or 1/5).

In some embodiments, the projection module 150 comprises a plurality of optical modules, each of which comprises a plurality of lenses. One of the optical modules includes at least one concave mirror (e.g., a catadioptric optical system). Another of the plurality of optical modules further includes at least one diffractive optical element (e.g., a diffractive optic) and a high-reflectivity mirror module.

As shown in fig. 1, the apparatus 100 further includes a control device 180 connected to the substrate stage driving device 125 and the mask stage driving device 165, for controlling the operations of the substrate stage driving device 125 and the mask stage driving device 165. In this embodiment, the control unit 180 includes a Central Processing Unit (CPU) and a memory.

Fig. 2 is a top view of a substrate holder 115 according to a first embodiment of the present invention. As shown in fig. 2, the substrate holder 115 has a plurality of

first openings

210, 220, 230, and 240, a plurality of

second openings

250, 260, and 270, and a central opening 280. The first gas may be directed to the bottom surface of the substrate (S) through the plurality of

first openings

210, 220, 230, and 240 of the substrate holder 115, so that the substrate (S) may rise/float on the substrate holder 115. The first openings 210-240 are elongated openings configured to uniformly distribute the first gas/air between the substrate carrier 115 and the substrate (S).

The second gas along the surface of the substrate holder 115 may be pumped out through the plurality of

second openings

250, 260, and 270, thereby stabilizing the position of the substrate on the substrate holder 115.

In this embodiment, the first and second openings 210-270 are concentric and annular openings. As shown in FIG. 2, the first and second openings 210-270 are continuous circular or closed openings. In various embodiments, the distance between adjacent pairs of first and second openings, such as the distance between the first opening 220 and the second opening 260, is less than or equal to about 15 mm. As shown in fig. 2, the first and second openings are alternately arranged on the substrate holder 115, for example, in some embodiments, the

first openings

210, 220, 230 and 240 surround the

second openings

250, 260 and 270. In other embodiments, the

second openings

250, 260, and 270 surround the

first openings

210, 220, 230, and 240. Other contemplated arrangements are not described in detail herein.

Although the substrate holder 115 is exemplified by four first openings 210-240 and three second openings 250-270, it will be apparent to those skilled in the art that the number of the first and second openings can be increased or decreased after reading this disclosure. For example, in a specific embodiment, the number of the first openings and the number of the second openings are the same, for example, the number of the first openings and the number of the second openings are both 5.

As shown in FIG. 2, the first openings 210-240 have the same width (W21). In some embodiments, the widths (W21) of the first openings 210-240 are the same as the widths (W22) of the second openings 250-270. In other embodiments, the widths (W21) of the first openings 210-240 are different from the widths (W22) of the second openings 250-270, for example, greater or less than the widths of the second openings 250-270.

The central opening 280 facilitates the extraction of the second gas. In this embodiment, the width of the central opening 280 is greater than the width (W21) of the first openings 210-240 and the width (W22) of the second openings 250-270. In other embodiments, the substrate carrier 115 may not have the central opening 280.

As shown in FIG. 2, the substrate edge holder 120 includes a pair of edge-supporting members disposed on opposite sides of the substrate holder 115 and extending along the edge of the substrate holder 115. In this embodiment, the edge carrying elements of each substrate edge carrier 120 are curved. In other embodiments, the edge carrying elements of each substrate edge carrying pedestal 120 are straight strips.

Although the substrate edge pedestal 120 is exemplified by a pair of edge support devices, it will be apparent to those skilled in the art from this disclosure that the number of edge support devices can be increased or decreased as desired. For example, in some embodiments, the substrate edge holder 120 can comprise an edge holder that can partially or completely surround the substrate holder 115. In other embodiments, the substrate edge carrier 120 may comprise three or more edge-carrying components disposed adjacent to the substrate carrier 115.

Fig. 3 isbase:Sub>A schematic view of the substrate holder 115 of fig. 2 taken along thebase:Sub>A-base:Sub>A section. As shown in FIG. 3, the substrate holder 115 is further defined by a plurality of

first passages

310, 320, 330, and 340, a plurality of

second passages

350, 360, and 370, a central passage 380, a first inlet 390a, and a second inlet 390 b. Each of the first, second and central passages 310-380 is connected to each of the first, second and central openings 210-280. In the present embodiment, each of the first, second and central passages 310-380 has the same width as each of the corresponding first, second and central openings 210-280. The first inlet 390a is located at the center of the substrate holder 115 and communicates with the

first openings

210, 220, 230, and 240 via

first passages

310, 320, 330, and 340 for receiving the first gas from a gas source (not shown). The second inlet 390b is located center-to-edge with the second openings 250-270 and the central opening 280 communicating via second passages 350-370 and a central passage 380 to receive the second gas from a vacuum source (not shown).

The edge support element of each substrate edge support 120 includes an upper surface, a lower surface, and an intermediate surface between the upper and lower surfaces. The upper, lower and middle surfaces are higher than the substrate edge support base for supporting the substrate (S) by the edge of the substrate (S).

FIG. 4 isbase:Sub>A schematic view of the substrate holder 415 of FIG. 2 alongbase:Sub>A cross-section A-A according tobase:Sub>A second embodiment of the present disclosure, in some embodiments according to the present disclosure. As shown in fig. 4, the substrate holder 415 of the present embodiment is different from the substrate holder 115 of the previous embodiments in that a plurality of raised portions 400 are included on the upper surface of the substrate holder 415. Each of the first openings 210-240, the second openings 250-270, and the central opening 280 is formed on the corresponding elevated portion 400. Each of the first passages 410-440, the second passages 450-470, and the central passage 480 extends from each of the corresponding raised portions 400 to a corresponding one of the first openings 210-240, the second openings 250-270, and the central opening 280, respectively.

Fig. 5 is a top view of a substrate carrier 515 according to a third embodiment of the present disclosure in some embodiments according to the present disclosure. As shown in fig. 5, the substrate holder 515 of the present embodiment is different from the substrate holder 115 of the previous embodiment in that each of the first openings 510-540 of the substrate holder 515 is a discontinuous annular opening. In the present embodiment, each of the first openings 510-540 includes a plurality of separate gas/air channels 500. In some embodiments, the channel 500 is arcuate. In other embodiments, the channel 500 is a straight strip.

Fig. 6 is a top view of a substrate holder 615 according to a fourth embodiment of the present disclosure in some embodiments of the present disclosure. As shown in fig. 6, the substrate holder 615 of the present embodiment differs from the substrate holder 115 of the previous embodiments in that the second openings 650-670 of the substrate holder 615 are a plurality of holes arranged in concentric circles and formed in the substrate holder 615.

Fig. 7 is a top view of a substrate carrier 715 provided in accordance with a fifth embodiment of the present disclosure, in some embodiments provided in accordance with the present disclosure. As shown in FIG. 7, the first openings 710-740 have different widths W71, W72, W73, and W74, respectively. For example, the widths W71, W72, W73, and W74 of the first openings increase from the innermost side (e.g., the width W71 of the opening 710) to the outermost side (e.g., the width W74 of the opening 740). In other words, the width W74 is wider than the width W73, the width W73 is wider than the width W72, and the width W72 is wider than the width W71. With this structure, the first gas/air can be more uniformly distributed on the back surface of the substrate (S).

In one embodiment, the width W71 of the first opening 710 is narrower than the width of the second openings 250-270. In some embodiments, the width W72 of the first opening 720 is the same as the width of the second openings 250-270. In other embodiments, the widths W73 and W74 of the

first openings

730 and 740 are wider than the widths of the second openings 250-270.

FIG. 8 is a schematic view of the substrate holder 715 of FIG. 7 along a section B-B in accordance with a fifth embodiment of the present disclosure, in some embodiments provided in accordance with the present disclosure. As shown in FIG. 8, each of the first channels 810-840 is connected to each of the first openings 710-740, and the width of each of the first channels 810-840 is the same as the width of the corresponding first opening 710-740. The first inlet 890a is located at the center of the substrate holder 715.

In a specific embodiment, the widths W71, W72, W73, and W74 decrease from the innermost opening to the outermost opening, such as from the first opening 710 to the first opening 740. In this particular embodiment, the first inlet 890a is located at an edge of the substrate holder 815.

Fig. 9 is a top view of a substrate carrier 915 provided in accordance with a sixth embodiment of the present disclosure, in some embodiments provided in accordance with the present disclosure. As shown in FIG. 9, the substrate holder 915 of the present embodiment differs from the substrate holder 115 of the previous embodiments in that the first openings 910-940 have widths that vary along their extent. For example, the width (Wb) of the left side of the opening 940 is wider than the width (Wd) of the right side thereof, and the width Wa of the upper portion of the opening is the same as the width Wc of the lower portion thereof. The widths Wc and Wa of the first opening 940 are smaller than the width Wb of the first opening 940, but wider than the width Wd of the first opening 940.

FIG. 10 is a schematic view of the substrate holder 915 shown in FIG. 9 along a cross-section C-C provided in accordance with a sixth embodiment of the present disclosure, in some embodiments provided in accordance with the present disclosure. As shown in FIG. 10, each of the first channels 810-840 is connected to each of the first openings 710-740, and the width of the first channels 1010-1040 is the same as the width of the corresponding first openings 910-940. In this embodiment, the first inlet 990a is located at the edge of the substrate holder 915.

Figure 11 isbase:Sub>A schematic view of the substrate edge pedestal 1100 of figure 2 taken along sectionbase:Sub>A-base:Sub>A according tobase:Sub>A second embodiment of the present disclosure in some embodiments according to the present disclosure. As shown in fig. 11, the substrate edge carrier 1100 of the present embodiment is different from the substrate edge carrier 120 of the previous embodiment in that the substrate edge carrier 1100 has a sidewall, a plurality of

third openings

1110, 1120, 1130, and 1140, a plurality of

third channels

1150, 1160, 1170, and 1180, and a third inlet 1190 are formed on the sidewall.

Each of the third channels 1150-1180 is correspondingly connected to each of the third openings 1110-1140. The third inlet 1190 is connected between the third passageway 1150-1180 and the gas/air source.

Third gas/air is introduced to the edge of the substrate (S) through the third inlet 1190, the third passages 1150-1180, and the third openings 1110-1140 to fix the substrate (S) to the center of the substrate holder 115, i.e., to minimize the lateral movement of the substrate (S) relative to the substrate holder 115 when the substrate (S) floats on the substrate holder 115.

Although the substrate edge carrier 1100 is illustrated with four openings 1110-1140, it will be apparent to those skilled in the art that the number of openings in the edge carrier can be increased or decreased as desired after reading this disclosure.

Fig. 12 is an enlarged, partially cross-sectional view of the substrate holder 115 and substrate edge holder 110 of fig. 11, in accordance with some embodiments provided by the present disclosure. As shown in fig. 12, the

third channels

1150 and 1180 form respective angles α and β with

horizontal lines

1210 and 1220 perpendicular to the inlet 1190. In this embodiment, the included angles α and β are equal to or greater than about 20 degrees, for example, about 20 ± 0.5 degrees. In some embodiments, each of the

third channels

1160, 1170 extends in a direction perpendicular to the inlet 1190. In other embodiments, each of the

third channels

1160, 1170 and the inlet 1190 are at an obtuse angle.

FIG. 13 isbase:Sub>A schematic view of the substrate edge holder of FIG. 2 taken along section A-A in accordance withbase:Sub>A third embodiment of the present disclosure, in some embodiments in accordance with the present disclosure. As shown in fig. 13, the substrate edge holder 1300 of the present embodiment differs from the substrate edge holder 120 of the previous embodiments in that the substrate edge holder 1300 includes sidewalls having third and

fourth openings

1310, 1320, third and

fourth channels

1330, 1340, and third and

fourth inlets

1350, 1360 formed therein.

Each of the third and

fourth channels

1330, 1340 is connected to a corresponding third and

fourth opening

1310, 1320. Each of the third and

fourth inlets

1350, 1360 is connected between the third and

fourth channels

1330, 1340 and the gas/air and vacuum sources.

The first gas/air is introduced from the third inlet 1350, the third channel 1330 and the third opening 1310 to the edge of the substrate (S) by the gas/air source, thereby fixing the substrate (S) on the center of the substrate holder 115.

The second gas/air is pumped from the substrate edge holder 1300 through the fourth opening 1320, the fourth passageway 1340, and the third inlet 1360 by the vacuum source.

Figure 14 is a top view of a substrate carrier 1415 according to a seventh embodiment of the present disclosure in some embodiments thereof. As shown in fig. 14, the substrate holder 1415 of the present embodiment is different from the substrate holder 115 of the previous embodiment in that the substrate holder 1415 does not have the second openings 250-270 and the central opening 280.

Figure 15 is a schematic view of the substrate edge pedestal 1500 of figure 14 taken along section D-D according to a fourth embodiment of the present disclosure in some embodiments provided according to the present disclosure. As shown in fig. 15, the substrate carrier 1415 does not include the second passages 350-370 and the central passage 380. In addition, the substrate edge holder 1500 of the present embodiment differs from the substrate edge holder 120 of the previous embodiments in that the substrate edge holder 1500 includes a sidewall, a fourth opening 1510, a fourth channel 1520 connected to the fourth opening, and a fourth inlet 1530 connected to the fourth channel 1520 and the vacuum source in the sidewall. The second gas/air is pumped out of the substrate edge holder 1500 by the vacuum source through the fourth opening 1510, the fourth channel 1520, and the fourth inlet 1530.

FIG. 16 is a flow chart of a method of processing a semiconductor substrate according to a first embodiment of the present disclosure in some embodiments according to the present disclosure. The foregoing method 1600 will be described with reference to fig. 1-10. As shown in fig. 16, in a process 1610, a gas/air source provides a first gas/air through a first opening (e.g., openings 210-240, 510-540, 710-740, 910-940) in a substrate carrier (e.g.,

substrate carrier

115, 415, 515, 615, 715, 915).

In process 1620, a vacuum source evacuates a second gas/air from the upper surface of the substrate carrier through the second opening (e.g., openings 250-270, 650-670) and the central opening (e.g., opening 280).

In flow 1630, a substrate edge holder (e.g., substrate edge holder 120) receives a semiconductor substrate thereon. The first gas/air and the second gas/air space the substrate and the substrate holder apart from each other at a predetermined distance. The size of the gap between the substrate and the surface of the substrate holder may be adjusted by adjusting the gas/air and the vacuum source. The substrate edge carrier holds the substrate in the center of the substrate carrier.

In process 1640, a photolithography process is performed on the substrate. In other embodiments, the inspection process is performed on the substrate in the process 1640.

In this embodiment, the supply of the first gas/air and the withdrawal/evacuation of the second gas are continued. In another embodiment, the first gas/air is intermittently supplied and the second gas is pumped/evacuated. In some embodiments, the first gas/air is continuously supplied, but the second gas is intermittently pumped/evacuated. In other embodiments, the first gas/air is supplied intermittently, but the second gas is continuously withdrawn/evacuated. In certain embodiments, the alternating between supplying the first gas/air and withdrawing/evacuating the second gas is performed.

FIG. 17 is a flow chart of a method of processing a semiconductor substrate according to a second embodiment of the present disclosure in some embodiments thereof. The method 1700 is described with reference to fig. 11 and 12. As shown in fig. 17, in process 1710, a gas/air source provides a first gas/air through a first opening (e.g., openings 210-240) in a substrate carrier (e.g., substrate carrier 115) and through a third opening (e.g., openings 1110-1140) in a substrate edge carrier (e.g., substrate edge carrier 1110).

In process 1720, a vacuum source evacuates a second gas/air from the upper surface of the substrate carrier through the second opening (e.g., openings 250-270, 650-670) and the central opening (e.g., opening 280).

In process 1730, the substrate carrier receives a semiconductor substrate thereon. The first gas/air and the second gas/air space the substrate and the substrate holder apart from each other at a predetermined distance. The size of the gap between the substrate and the surface of the substrate holder may be adjusted by adjusting the gas/air and the vacuum source. The first gas/air directed to the edge of the substrate through the third opening maintains the substrate in the center of the substrate holder.

In flow 1740, a photolithography process is performed on the substrate. In other embodiments, an inspection process is performed on the substrate in the process 1740.

In this embodiment, the first gas/air is continuously supplied through the first and third openings, and the second gas is continuously extracted/evacuated through the second opening. In another embodiment, the first gas/air is intermittently supplied through the first and third openings, and the second gas is intermittently pumped/evacuated through the second opening. In some embodiments, the first gas/air is continuously supplied through the first and third openings, and the second gas is intermittently pumped/evacuated through the second opening. In other embodiments, the first gas/air is intermittently supplied through the first and third openings, and the second gas is continuously withdrawn/evacuated through the second opening. In a particular embodiment, alternating between supplying said first gas/air through said first and third openings and withdrawing/evacuating said second gas through said second opening.

FIG. 18 is a flow chart of a method of processing a semiconductor substrate according to a third embodiment of the present disclosure in some embodiments according to the present disclosure. The foregoing method 1800 will be described with reference to fig. 13. As shown in fig. 18, in a process 1810, a gas/air source provides a first gas/air through a first opening (e.g., openings 210-240) in a substrate carrier (e.g., substrate carrier 115) and through a third opening (e.g., opening 1310) in a substrate edge carrier (e.g., substrate edge carrier 1300).

In process 1820, a vacuum source evacuates a second gas/air from the upper surface of the substrate carrier through the second opening (e.g., openings 250-270), the central opening (e.g., opening 280), and the fourth opening (e.g., opening 1320) in the substrate carrier at the edge of the substrate carrier.

In flow 1830, the substrate carrier receives a semiconductor substrate thereon. The first gas/air and the second gas/air space the substrate and the substrate holder apart from each other at a predetermined distance. The size of the gap between the substrate and the surface of the substrate holder may be adjusted by adjusting the gas/air and the vacuum source. The first gas/air directed to the edge of the substrate through the third opening maintains the substrate in the center of the substrate holder.

In flow 1840, a photolithography process is performed on the substrate. In other embodiments, a detection process is performed on the substrate in flow 1840.

In this embodiment, the first gas/air is continuously supplied through the first and third openings, and the second gas is continuously extracted/evacuated through the second and fourth openings. In another embodiment, the first gas/air is intermittently supplied through the first and third openings, and the second gas is intermittently extracted/evacuated through the second and fourth openings. In some embodiments, the first gas/air is continuously supplied through the first and third openings, and the second gas is intermittently extracted/evacuated through the second and fourth openings. In other embodiments, the first gas/air is intermittently supplied through the first and third openings, and the second gas is continuously withdrawn/evacuated through the second and fourth openings. In a particular embodiment, alternating between supplying said first gas/air through said first and third openings and withdrawing/evacuating said second gas through said second and fourth openings.

FIG. 19 is a flowchart of a method of processing a semiconductor substrate according to a fourth embodiment of the present disclosure in some embodiments according to the present disclosure. The method 1900 is described with reference to fig. 14 and 15. As shown in fig. 19, in a process 1910, a gas/air source provides a first gas/air through a first opening (e.g., openings 1410-1440) in a substrate carrier (e.g., substrate carrier 1415).

In flow 1920, a vacuum source evacuates the second gas/air from the upper surface of the substrate carrier through a fourth opening (e.g., opening 1510) located on the substrate edge carrier (e.g., substrate edge carrier 1450).

In process 1930, the substrate edge carrier receives a semiconductor substrate thereon. The first gas/air and the second gas/air space the substrate and the substrate holder apart from each other at a predetermined distance. The size of the gap between the substrate and the surface of the substrate holder may be adjusted by adjusting the gas/air and the vacuum source. The substrate edge carrier holds the substrate in the center of the substrate carrier.

In process 1940, a photolithography process is performed on the substrate. In other embodiments, a detection process is performed on the substrate in flow 1940.

In this embodiment, the first gas/air is continuously supplied through the first opening, and the second gas is continuously pumped/evacuated through the fourth opening. In another embodiment, the first gas/air is intermittently supplied through the first opening, and the second gas is intermittently pumped/evacuated through the fourth opening. In some embodiments, the first gas/air is continuously supplied through the first opening and the second gas is intermittently pumped/evacuated through the fourth opening. In other embodiments, the first gas/air is intermittently supplied through the first opening and the second gas is continuously pumped/evacuated through the fourth opening. In a specific embodiment, the first gas/air is supplied through the first opening and the second gas is evacuated/evacuated through the fourth opening.

In one embodiment, an apparatus for processing a semiconductor substrate is provided that includes a substrate carrier and a gas source. The substrate stage is used for bearing the substrate on the substrate stage, and comprises a substrate stage base and a first opening formed on the base body stage base. The first opening is an annular opening. The gas source is coupled to the first opening for supplying a first gas/air to the lower surface of the substrate through the first opening.

In another embodiment, an apparatus for processing a semiconductor substrate is provided that includes a substrate carrier and a gas source. The substrate carrier is used for carrying the substrate on the substrate carrier and comprises a substrate carrier base and a substrate edge bearing seat. The substrate edge carrier is adjacent to the substrate carrier and has a sidewall with a first opening. The gas source is connected to the first opening for supplying a first gas/air to an edge of the substrate through the first opening to hold the substrate in a center of the substrate holder.

In another embodiment, a method for processing a semiconductor substrate is provided that includes supplying a first air/gas through a first opening in a substrate carrier, receiving the substrate on the substrate carrier, retaining the substrate in a center of the substrate carrier, and performing a process on the substrate. The at least one first opening is an elongated opening.

In summary, the substrate holder and the substrate edge holder provided in the embodiments of the present invention can float the substrate on the substrate holder, prevent the back surface of the substrate from contacting the surface of the substrate holder, and maintain the substrate at the center of the substrate holder by the substrate edge holder. In this way, the substrate carrier and the substrate edge carrier provided by the present invention can avoid the defect on the wafer after the photolithography process caused by the contamination particles on the back side of the substrate during the process.

It should be understood that the above examples are only for illustrating the present invention and are not to be construed as limiting the present invention. It will be apparent to those skilled in the art that various other modifications and variations can be made in the technical spirit of the present invention within the scope of the appended claims.

Claims

1. An apparatus for processing a substrate, comprising:

a substrate stage for carrying the substrate thereon, the substrate stage comprising a substrate holder having a first opening, a second opening formed therein, and a substrate edge holder, wherein the first opening is an annular opening, the substrate edge holder is adjacent to the substrate holder and has a sidewall, and the sidewall has a third opening;

a gas source connected to the first opening for supplying a first gas to the lower surface of the substrate through the first opening; and

and a vacuum source connected to the second opening and the third opening, for exhausting a second gas between the upper surface of the substrate holder and the lower surface of the substrate through the second opening.

2. An apparatus for processing a semiconductor substrate, comprising:

a substrate carrier for carrying the substrate thereon, the substrate carrier further comprising:

a substrate carrier; and

a substrate edge carrier, the substrate edge carrier being adjacent to the substrate stage and having a sidewall, the sidewall having a first opening; and

the gas source is connected to the first opening for supplying a first gas to the edge of the substrate through the first opening to maintain the substrate in the center of the substrate holder.

3. The apparatus of claim 2, further comprising: the first channel is connected between the first opening and the gas source, and an acute angle is formed between the first channel and the horizontal line.

4. The apparatus of claim 2, wherein the sidewall of the substrate edge holder further comprises a second opening, the apparatus further comprising a vacuum source coupled to the second opening to evacuate a second gas between the upper surface of the substrate holder and the lower surface of the substrate through the second opening.

5. The apparatus of claim 2, wherein the substrate carrier has a plurality of first openings, wherein each of the first openings has a different width; the apparatus further includes a gas source coupled to the first opening for supplying a first gas to the lower surface of the substrate through the first opening.

6. The apparatus of claim 5, wherein the substrate holder has a plurality of second openings, wherein the second openings and the first openings are alternately disposed on the substrate holder; the apparatus further includes a vacuum source coupled to the second opening for drawing a second gas between the upper surface of the substrate holder and the lower surface of the substrate through the second opening.

7. The apparatus of claim 2, wherein the substrate carrier has a plurality of first openings, wherein the first openings have different widths along their lengths; the apparatus further includes a gas source coupled to the first opening for supplying a first gas to the lower surface of the substrate through the first opening.

8. A method of processing a substrate, the method comprising:

supplying a first gas through first openings in a substrate carrier, wherein at least one of the first openings is elongated or elongated;

receiving the substrate on the substrate holder;

holding the substrate at the center of the substrate holder;

supplying the first gas through a third opening in the substrate edge carrier adjacent to the substrate carrier;

drawing the second gas through a fourth opening in the substrate edge carrier adjacent to the substrate carrier;

a process is performed on the substrate.