CN113066873A - Photoelectric detector and preparation method thereof - Google Patents

Photoelectric detector and preparation method thereof Download PDF

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CN113066873A
CN113066873A CN201911412413.XA CN201911412413A CN113066873A CN 113066873 A CN113066873 A CN 113066873A CN 201911412413 A CN201911412413 A CN 201911412413A CN 113066873 A CN113066873 A CN 113066873A
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layer
electrode
light
photonic crystal
emitting layer
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CN113066873B (en
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邓承雨
芦子哲
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TCL Research America Inc
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TCL Research America Inc
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Abstract

The invention belongs to the technical field of display, and particularly relates to a photoelectric detector and a preparation method thereof. The present invention provides a photodetector including: a first electrode, a second electrode, a light emitting layer disposed between the first electrode and the second electrode, and a reinforcing layer disposed between the light emitting layer and the first electrode; the material of the reinforcing layer comprises: metal nanoparticles and photonic crystals. The incident light is gathered by utilizing the metal nano particles and the photonic crystals, and the effective local electric field generated by the interaction of the metal nano particles and the photonic crystals promotes a large amount of electrons to be injected into the luminescent layer, so that the luminescent rate of the luminescent layer is accelerated, and the superposition occurs when the plasma resonance peak excited by the effective local electric field is the same as or close to the emission frequency of the luminescent layer material, thereby greatly increasing the light emission efficiency and the light emission intensity of the luminescent layer.

Description

Photoelectric detector and preparation method thereof
Technical Field
The invention belongs to the technical field of display, and particularly relates to a photoelectric detector and a preparation method thereof.
Background
In recent years, quantum dots and related materials thereof have wide application prospects in the fields of biochemistry, optical detection and analysis and the like due to excellent optical properties, such as narrow fluorescence emission half-peak width, high fluorescence quantum yield, easiness in modifying various functional groups on the surface and the like, and incomparable characteristics in biochemical performance, such as good biocompatibility, low cytotoxicity and the like.
Ultraviolet photodetectors have found widespread use and research in fire monitoring, bioanalysis, environmental sensors, and optical communication/imaging. In recent years, silicon and inorganic wide bandgap semiconductor-based ultraviolet photodetectors have made great progress, but due to the comprehensive influence of multiple factors, the existing ultraviolet photodetectors still have the disadvantages of low sensitivity, slow response shortening and the like, and the development of a new generation of ultraviolet photodetectors becomes a technical problem to be solved urgently by those skilled in the art.
Disclosure of Invention
The invention mainly aims to provide a photoelectric detector, aiming at solving the problems of low sensitivity, slow response time shortening and the like of the conventional photoelectric detector.
Another object of the present invention is to provide a method for manufacturing a photodetector.
To achieve the above object, in a first aspect, the present invention provides a photodetector comprising: a first electrode, a second electrode, a light emitting layer disposed between the first electrode and the second electrode, and a reinforcing layer disposed between the light emitting layer and the first electrode;
the material of the reinforcing layer comprises: metal nanoparticles and photonic crystals.
The invention provides a photoelectric detector, wherein a reinforced layer is arranged between a luminous layer and a first electrode, and the material of the reinforced layer comprises: metal nanoparticles and photonic crystals. When the first electrode is a transparent electrode, the enhancement layer can receive light rays incident from the first electrode, an external light source is incident on the enhancement layer through the first electrode, the metal nanoparticles are excited by the light source to generate plasma resonance peaks to form local electric fields distributed in a sub-wavelength region close to the surface of the nanostructure, and meanwhile, the local electric fields can be further modulated and expanded when the dielectric structures are periodically and orderly arranged through the photonic crystals, so that highly amplified effective local electric fields are generated at the contact interface of the metal nanoparticles and the photonic crystals, on one hand, a large number of electrons are injected into the light-emitting layer, the light absorption efficiency of the light-emitting layer is improved, the recombination rate of the electrons and holes in the light-emitting layer is enhanced, and the light-emitting rate of the light-emitting layer is accelerated; on the other hand, when the wavelength of the plasma resonance peak is the same as or close to the excitation wavelength of the material of the light-emitting layer, the light signal superposition occurs, so that the light emission efficiency and the light emission intensity of the light-emitting layer are greatly increased, and the purposes of improving the detection sensitivity of the photoelectric detector and shortening the response time are further achieved.
Correspondingly, the preparation method of the photoelectric detector comprises the following steps of preparing the enhancement layer:
depositing a reinforcement layer on a substrate, the reinforcement layer comprising a material comprising: metal nanoparticles and photonic crystals;
when the substrate is a first electrode, the step of depositing the enhancement layer on the substrate comprises: depositing a reinforcement layer on the first electrode;
when the substrate is a second electrode, the substrate comprises the second electrode and a light-emitting layer arranged on the second electrode, and the step of depositing the enhancement layer on the substrate comprises: depositing a reinforcement layer on the light emitting layer.
The preparation method of the photoelectric detector provided by the invention is obtained by depositing the enhancement layer on the substrate, and has the advantages of simple method and convenient operation. The material of the enhancement layer is selected from metal nano particles and photonic crystals, incident light is gathered by the metal nano particles and the photonic crystals, and an effective local electric field generated by interaction of the metal nano particles and the photonic crystals promotes a large amount of electrons to be injected into the light-emitting layer, so that the light-emitting rate of the light-emitting layer is accelerated, and when a plasma resonance peak excited by the effective local electric field is the same as or similar to the emission frequency of the material of the light-emitting layer, superposition occurs, so that the light-emitting efficiency and the light-emitting intensity of the light-emitting layer are greatly increased.
Drawings
Fig. 1 is a cross-sectional structure of a photodetector according to an embodiment of the present invention;
fig. 2 is a cross-sectional structure of a photodetector according to an embodiment of the present invention;
FIG. 3 is a flowchart of a step of preparing an enhancement layer according to an embodiment of the present invention;
fig. 4 is a flowchart of a method for manufacturing a photodetector according to an embodiment of the present invention.
Reference numerals: a second electrode L01, a light emitting layer L02, an enhancement layer L03, a first electrode L04, a photonic crystal layer L031, and a metal nanoparticle layer L032.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
A photodetector, as shown in fig. 1, comprising: a first electrode L04, a second electrode L01, a light emitting layer L02 disposed between the first electrode L04 and the second electrode L01, and a reinforcing layer L03 disposed between the light emitting layer L02 and the first electrode L04;
the material of the reinforcing layer L03 includes: metal nanoparticles and photonic crystals.
In the photodetector provided in the embodiment of the present invention, the enhancement layer is disposed between the light emitting layer and the first electrode, and the material of the enhancement layer includes: metal nanoparticles and photonic crystals. When the first electrode is a transparent electrode, the enhancement layer can receive light incident through the first electrode, so that an external light source is incident on the enhancement layer through the first electrode, the metal nanoparticles are excited by the light source to generate plasma resonance peaks to form local electric fields distributed in a sub-wavelength region close to the surface of the nanostructure, and simultaneously, the local electric field may be further modulated and amplified by the dielectric structure in the periodic ordered arrangement of the photonic crystal, thereby generating a highly amplified effective local electric field at the contact interface of the metal nanoparticles and the photonic crystal, which, on the one hand, a large amount of electrons are injected into the light-emitting layer, so that the light absorption efficiency of the light-emitting layer is improved, and the recombination rate of the electrons and holes in the light-emitting layer is enhanced, so that the light-emitting rate of the light-emitting layer is increased; on the other hand, when the wavelength of the plasma resonance peak is the same as or close to the excitation wavelength of the material of the light-emitting layer, the light signal superposition occurs, so that the light emission efficiency and the light emission intensity of the light-emitting layer are greatly increased, and the purposes of improving the detection sensitivity of the photoelectric detector and shortening the response time are further achieved.
In one embodiment, the first electrode is a transparent electrode, and the enhancement layer is capable of receiving light incident through the first electrode. When the light emitting device works, an external light source is gathered on the enhancement layer through the transparent electrode and acts on the light emitting layer through the enhancement layer, the light emitting layer emits light signals, and the light signals are acquired by the related detection elements.
Different from the prior art, the photoelectric detector of the embodiment of the invention is provided with the enhancement layer between the transparent electrode and the luminescent layer, and the material of the enhancement layer comprises: metal nanoparticles and photonic crystals. Through utilizing incident light to arouse metal nanoparticle and produce plasma resonance effect and utilize the photonic crystal effect that photonic crystal produced, make the effective local electric field that metal nanoparticle and photonic crystal interact produced, promoted a large amount of electrons and injected into the luminescent layer, the luminous rate of luminescent layer has been accelerated, plasma formant that produces when metal nanoparticle arouses takes place the light signal stack with the excitation wavelength of luminescent layer material the same or when being close, thereby greatly increased the luminous efficacy and the luminous intensity of luminous layer, and then improve photoelectric detector's detectivity and shorten detect time.
The enhancement layer can be a mixture layer of metal nanoparticles and photonic crystals or a composite layer formed by the metal nanoparticle layer and the photonic crystal layer.
As an embodiment, as shown in fig. 2, the enhancement layer includes a photonic crystal layer L031 and a metal nanoparticle layer L032, which are sequentially disposed, and the metal nanoparticles are physically doped on a contact interface between the photonic crystal layer and the metal nanoparticle layer.
The enhancement layer is set into the photonic crystal layer and the metal nano-particle layer which are sequentially arranged, so that the enhancement layer with an ordered arrangement structure is promoted to be formed, and the detection sensitivity of the photoelectric detector is further improved; the metal nano particles are physically doped on the contact interface of the photonic crystal layer and the metal nano particle layer to form a plasma photonic crystal, and a plasma resonance peak generated by the plasma photonic crystal layer is matched with an emission peak of the light emitting layer to form superposition resonance, so that the effect of enhancing the luminous intensity of the light emitting layer material is achieved, the fluorescence emission rate of the light emitting layer material is increased, and the corresponding rate of the photoelectric detector is improved.
Furthermore, the relative positions of the photonic crystal layer and the metal nanoparticle layer in the photoelectric detector can be flexibly adjusted according to the actual preparation process, so that the metal nanoparticles are physically doped on the contact interface of the photonic crystal layer and the metal nanoparticle layer. Because the particle size (100-700 nm) of the photonic crystal is often larger than the particle size (50-200 nm) of the metal nanoparticles, in the actual process, the metal nanoparticles are often deposited on the photonic crystal, so that the metal nanoparticles can be doped into the gaps formed between the photonic crystals on the contact interface in the film forming process, and further the metal nanoparticles are physically doped on the contact interface between the photonic crystal layer and the metal nanoparticle layer. In some embodiments, the metal nanoparticles are disposed on a surface of the photonic crystal layer distal from the light emitting layer.
In the photoelectric detector, the enhancement layer can be formed by sequentially and circularly arranging a plurality of photonic crystal layers and metal nano-particle layers to form a composite structure such as A-B-A-B or A-B-A-B-A-B and the like, so that the orderliness of the enhancement layer can be improved to a certain extent, and the detection sensitivity of the photoelectric detector can be improved. Preferably, the number of cycles for the photonic crystal layer and the metal nanoparticle layer in the enhancement layer is 1-5 times.
In one embodiment, the thickness of the photonic crystal layer is 1-10 μm, and the thickness of the metal nanoparticle layer is 100-150 nm. Within the thickness range of the layer, the metal nano particles can be embedded or partially embedded into the photonic crystal and can be stably arranged together in the form of intermolecular force to form a plasma photonic crystal mixing and superposing enhancement effect.
In one embodiment, the reinforcing layer has a thickness of 5 to 80 microns.
Specifically, the metal nanoparticles are selected to be metal nanoparticles with a particle size of 50-200 nm, and can form a plasma resonance peak under the excitation of visible light with a wavelength of 650nm and 300-.
The particle size of the metal nano-particles is directly related to the frequency of a plasma resonance peak generated subsequently, and when the frequency of the generated plasma resonance peak is matched with the frequency of exciting light of the light-emitting layer, light signal overlapping can be generated, so that the light emission efficiency and the light emission intensity of the light-emitting layer are greatly increased. In some embodiments, the light emitting layer emits blue light and the metal nanoparticles have a particle size of 50 to 80 nanometers. In some embodiments, the light emitting layer emits green light and the metal nanoparticles have a particle size of 80 to 120 nm. In some embodiments, the light emitting layer emits red light, and the particle size of the metal nanoparticles is 120-180 nm.
As an embodiment, the metal nanoparticles are selected from at least one of gold nanoparticles, silver nanoparticles, copper nanoparticles, zinc nanoparticles, and platinum nanoparticles. The metal nanoparticles have controllable shapes and sizes and good light absorption and photoelectric conversion performances.
Specifically, the photonic crystal is a structural material having a periodic dielectric structure on an optical scale, the periodic dielectric structure has a wavelength selection function, and can selectively pass light of a specific waveband and prevent light of other wavebands from passing through the periodic dielectric structure, and meanwhile, a local electric field radiated to the surface of the photonic crystal can be more effectively amplified due to a photonic crystal effect generated by regular periodic arrangement of the photonic crystal.
According to the embodiment of the invention, the metal nano particles are compounded with the photonic crystals, the metal nano particles can be excited by incident light to generate a plasma resonance effect to form a local electric field distributed in a sub-wavelength region close to the surface of the nano structure, and the local electric field can be further modulated and expanded when the photonic crystals are in a dielectric structure in periodic ordered arrangement, so that a highly amplified effective local electric field is generated at a contact interface of the metal nano particles and the photonic crystals, a large amount of electrons are injected into the light-emitting layer, the light absorption efficiency of the light-emitting layer is improved, the recombination rate of the electrons and holes in the light-emitting layer is enhanced, and the light-emitting rate of the light-emitting layer is accelerated; meanwhile, the effective local electric field can excite a plasma resonance peak, and the plasma resonance peak and the excitation frequency of the material of the light-emitting layer are overlapped when the plasma resonance peak and the excitation frequency of the material of the light-emitting layer are the same or close, so that the light emission efficiency and the light emission intensity of the light-emitting layer are greatly increased, and the purposes of improving the detection sensitivity of the photoelectric detector and shortening the response time are achieved.
In one embodiment, the weight ratio of the metal nanoparticles to the photonic crystal is (2-5): 1. When the weight ratio of the metal nanoparticles to the photonic crystal is more than 5:1, the metal nanoparticles are too much, so that the metal nanoparticles are excessively and disorderly embedded into the photonic crystal, and an excessively thick metal nano layer is formed on the outer surface of the photonic crystal, which is not favorable for forming an orderly arrangement structure; when the weight ratio of the metal nanoparticles to the photonic crystal is less than 2:1, the number of the metal nanoparticles is too small, the plasmon resonance effect generated by light excitation is weak, and a sufficient effective local electric field cannot be generated.
As an implementation mode, the particle size of the photonic crystal is 100-700 nm. The particle size of the photonic crystal is directly related to the frequency of a plasma resonance peak generated subsequently, and when the frequency of the generated plasma resonance peak is matched with the frequency of light emitted by the light emitting layer, the light emitting efficiency and the light emitting intensity of the light emitting layer can be greatly increased. In some embodiments, the light emitting layer emits blue light (wavelength is 400-450nm), and the particle size of the photonic crystal is 200-350 nm. In some embodiments, the light emitting layer emits green light (wavelength is 500-550nm), and the particle size of the photonic crystal is 350-500 nm. In some embodiments, the light emitting layer emits red light (wavelength of 600-650nm), and the particle size of the photonic crystal is 500-700 nm.
In one embodiment, the material of the photonic crystal is at least one selected from the group consisting of polymethyl methacrylate, opal, polycarbonate, and polystyrene. The photonic crystal materials have good solution processability, are beneficial to processing and forming photonic crystal microspheres with various particle sizes, have visible light transmittance of over 85 percent, are the most excellent high-molecular transparent materials at present, resist the change of water vapor and oxygen and are not easily interfered by the external environment.
Specifically, the material of the light emitting layer may refer to a conventional light emitting material in the art, and may be excited to emit light of a specific wavelength under the action of photoelectricity, including but not limited to inorganic semiconductor quantum dots or organic light emitting materials. In some embodiments, the inorganic semiconductor quantum dots comprise at least one of perovskite quantum dots, organic-inorganic perovskite quantum dots, graphene quantum dots, copper indium sulfide quantum dots, silicon quantum dots. In some embodiments, the organic luminescent material is selected from an anthracene compound selected from 9- (phenanthryl) -10-3 (9-phenylcarbazol-9-yl) anthracene, 9, 10-bis-biphenyl-4-yl-2, 6-diphenylanthracene, and/or a coumarin compound selected from 5,6,11, 12-tetraphenylbenzene, 3(2' -benzothiazolyl) -7-diethylaminocoumarin, 8-hydroxyquinoline aluminum, poly (1, 4-phenylenevinylene).
As an embodiment, the material of the light-emitting layer is selected from quantum dot materials, the quantum dot materials are selected from semiconductor compounds of more than two elements of groups IV, II-VI, II-V, III-VI, IV-VI, I-III-VI, II-IV-VI and II-IV-V of the periodic table or mixtures thereof, and the structure of the quantum dot materials can be a homogeneous binary component mononuclear structure, a homogeneous multi-component alloy component mononuclear structure, a multi-component alloy component gradient mononuclear structure, a binary component discrete core-shell structure and the like. In some embodiments, the quantum dot material is selected from at least one of CdSe, CdS, ZnSe, ZnS, CdTe, ZnTe, CdZnS, ZnSeS, CdSeS, CdSeSTe, cdznsett, InP, InAs, InAsP, PbS, PbSe, PbSeS, PbSeTe, and PbSTe. The quantum dot materials have quantum dot characteristics and high light emission efficiency.
The wavelength of the emitted light of the light-emitting layer is directly related to the particle size of the material of the light-emitting layer, preferably, the particle size of the material of the light-emitting layer is 10-70 nanometers, and the emitted light of the light-emitting layer is red light, green light and blue light. In some embodiments, the light-emitting layer has a material particle size of 10-25nm when the light-emitting wavelength is 400-450 nm. In some embodiments, the light-emitting layer has a material particle size of 30-50nm when the light-emitting wavelength is 500-550 nm. In some embodiments, the light-emitting layer has a material particle size of 50-70nm when the light-emitting wavelength is 600-650 nm.
Furthermore, the particle sizes of the metal nanoparticles and the photonic crystals in the enhancement layer are adjusted, so that the plasma resonance peak frequency generated by the interaction of the metal nanoparticles and the photonic crystals is matched with the frequency of the emitted light of the light emitting layer, and then the plasma resonance peak frequency and the frequency of the emitted light of the light emitting layer are superposed, and the light emitting performance of the photoelectric detector is further optimized.
As an embodiment, the light-emitting wavelength of the light-emitting layer is 400-450 nm; the particle size of the metal nano-particles is 50-80 nanometers, and the particle size of the photonic crystal is 200-350 nanometers.
As an embodiment, the light-emitting wavelength of the light-emitting layer is 500-550 nm; the particle size of the metal nano-particles is 80-120 nanometers, and the particle size of the photonic crystal is 350-500 nanometers.
As an embodiment, the light-emitting wavelength of the light-emitting layer is 600-650 nm; the particle size of the metal nanoparticles is 120-180 nm; and/or the particle size of the photonic crystal is 500-700 nm.
The kind and thickness of the first electrode and the second electrode can refer to the electrode conventional in the art, and can be a rigid electrode or a flexible electrode, so that the first electrode is a transparent electrode. In some embodiments, the first electrode is selected from an indium tin oxide transparent electrode, a flexible polyetheretherketone flexible transparent electrode, or an indium zinc oxide transparent electrode. In some embodiments, the second electrode is selected to be an aluminum electrode.
Based on the technical scheme, the embodiment of the invention also provides a preparation method of the photoelectric detector.
Correspondingly, the preparation method of the photoelectric detector comprises the following steps of preparing the enhancement layer:
s01, depositing an enhancement layer on the substrate, wherein the enhancement layer comprises the following materials: metal nanoparticles and photonic crystals;
when the substrate is a first electrode, the step of depositing the enhancement layer on the substrate comprises: depositing a reinforcement layer on the first electrode;
when the substrate is a second electrode, the substrate comprises the second electrode and a light-emitting layer arranged on the second electrode, and the step of depositing the enhancement layer on the substrate comprises: depositing a reinforcement layer on the light emitting layer.
The preparation method of the photoelectric detector provided by the embodiment of the invention is obtained by depositing the enhancement layer on the substrate, and has the advantages of simple method and convenient operation. The material of the enhancement layer is selected from metal nano particles and photonic crystals, the particle size of the metal nano particles is 50-200 nanometers, incident light is gathered by the metal nano particles and the photonic crystals, and an effective local electric field generated by interaction of the metal nano particles and the photonic crystals promotes a large number of electrons to be injected into the light-emitting layer, so that the light-emitting rate of the light-emitting layer is accelerated, and when a plasma resonance peak excited by the effective local electric field is the same as or close to the emission frequency of the material of the light-emitting layer, superposition occurs, so that the light-emitting efficiency and the light-emitting intensity of the light-emitting layer are greatly increased.
As an embodiment, as shown in fig. 3, the step of depositing the enhancement layer on the substrate includes:
s011, depositing a photonic crystal layer on the substrate;
and S012, depositing a metal nanoparticle solution on the photonic crystal layer, and heating to form an enhancement layer.
The photonic crystal layer is deposited on the substrate firstly, so that the photonic crystals can be orderly arranged, and the metal nano particle solution is deposited on the photonic crystal layer after the state of the photonic crystals is stable, so that the metal nano particles can be orderly embedded or partially embedded into a gap formed on a contact interface of the photonic crystal layer in the film forming process, and a complete plasma photonic crystal structure with periodic repetition is obtained.
The preparation of the photoelectric detector can be realized by sequentially depositing the light-emitting layer, the enhancement layer and the first electrode on the second electrode, and also can be realized by sequentially depositing the first electrode, the enhancement layer, the light-emitting layer and the second electrode on the first electrode.
In one embodiment, the substrate is a second electrode, and the substrate includes a second electrode and a light emitting layer disposed on the second electrode. Specifically, as shown in fig. 4, the method for manufacturing the photodetector includes the following steps:
s11, depositing a light-emitting layer on the second electrode;
s12, depositing a reinforced layer on the light-emitting layer, wherein the material of the reinforced layer comprises: metal nanoparticles and photonic crystals;
and S13, depositing a first electrode on the enhancement layer.
In step S11, a light-emitting layer is deposited on the second electrode;
the step of depositing the light-emitting layer on the second electrode can refer to the conventional operation in the art, such as depositing the light-emitting material on the second electrode to form the light-emitting layer by using a magnetron sputtering method, a chemical vapor deposition method, an evaporation method, a spin coating method, an inkjet printing method, and the like.
The light emitting layer and the second electrode can refer to the light emitting layer and the second electrode, which is not repeated herein for brevity.
In step S12, depositing a reinforcing layer on the light emitting layer, wherein the material of the reinforcing layer includes: metal nanoparticles and photonic crystals;
the materials, compositions and structures of the metal nanoparticles and the photonic crystals and the structure of the enhancement layer can refer to the metal nanoparticles, the photonic crystals and the enhancement layer, which are not described in detail herein for saving space.
The step of depositing the enhancement layer on the light emitting layer may employ a method of depositing a mixture of metal nanoparticles and photonic crystals on the light emitting layer, or a method of sequentially depositing metal nanoparticles and photonic crystals on the light emitting layer.
In some embodiments, the step of depositing a reinforcing layer over the light emitting layer comprises:
s121, depositing a photonic crystal layer on the light-emitting layer;
and S122, depositing a metal nanoparticle solution on the photonic crystal layer, and performing heating treatment to form an enhancement layer.
In step S121, a photonic crystal layer is deposited on the light emitting layer to form a photonic crystal layer. As an embodiment, the photonic crystal layer is deposited on the light emitting layer using an evaporation method. The photonic crystal is an organic matter, has a low boiling point, is easy to obtain steam substances, can promote to obtain a uniformly arranged layer structure by using an evaporation method, and is favorable for improving the detection sensitivity of the photoelectric detector. In some embodiments, the photonic crystal is evaporated for 10-60 minutes at 150-300 ℃, which is beneficial to controlling the deposition speed of the photonic crystal and forming the photonic crystal layer with uniform film layer and moderate thickness.
In step S122, a metal nanoparticle solution is deposited on the photonic crystal layer, so that the metal nanoparticle solution is coated on the photonic crystal layer, which is beneficial to initially depositing the small-particle-size metal nanoparticles in the metal nanoparticle solution in the surface gap of the photonic crystal layer.
Wherein the metal nanoparticle solution is a solution in which metal nanoparticles are dispersed, and in some embodiments, the metal nanoparticles in the metal nanoparticle solution have a particle size of 50 to 200 nm.
And carrying out heating treatment to promote the volatilization of the solvent and the deposition of the metal nano particles into the surface gaps of the photonic crystal layer so as to form the enhancement layer. In some embodiments, the treatment is heat treated at 70 ℃ to 90 ℃.
In a further embodiment, the thickness of the photonic crystal layer is 1-10 microns, and the thickness of the metal nanoparticle layer is 100-150 nm.
And S13, depositing a first electrode on the enhancement layer.
Wherein the first electrode is substantially the same as the first electrode described above, and should have the same properties and effects. In some embodiments, the first electrode is a transparent electrode and the enhancement layer is capable of receiving light incident through said first electrode.
In one embodiment, the substrate is a first electrode, and the first electrode is a transparent electrode. Specifically, the preparation method of the photoelectric detector comprises the following steps:
s21, depositing an enhancement layer on the first electrode, wherein the material of the enhancement layer comprises: metal nanoparticles and photonic crystals;
s22, depositing a light-emitting layer on the enhancement layer;
and S23, depositing a second electrode on the light-emitting layer.
Wherein the step of depositing the enhancement layer on the first electrode may refer to the step S12 described above, preferably by sequentially depositing a photonic crystal layer and a metal nanoparticle solution on the first electrode, followed by a heating treatment.
In order that the details of the above-described implementation and operation of the present invention will be clearly understood by those skilled in the art, and the advanced performance of a photodetector and a method of manufacturing the same according to an embodiment of the present invention will be apparent, the implementation of the present invention will be illustrated by the following examples.
Example 1
The embodiment provides an ultraviolet photodetector, and a preparation method of the ultraviolet photodetector specifically comprises the following steps:
(1) blue CdSeS quantum dots with the particle size of 20nm and the concentration of 30mg/mL are coated on the aluminum electrode in a spinning mode at the speed of 1000r/min to form a quantum dot light-emitting layer with the thickness of 10 mu m.
(2) Polymethyl methacrylate photonic crystals having a particle size of 100nm were evaporated at 150 ℃ for 15 minutes to form a photonic crystal layer of 2 μm thickness on the quantum dot light emitting layer.
(3) And (3) coating the ethanol solution of the nano-gold with the particle size of 30nm on the photonic crystal layer of the device prepared in the step (2), heating in a 70 ℃ oven, and embedding the nano-gold particles in the solution into gaps formed among the photonic crystals on the surface of the photonic crystal layer along with the volatilization of the ethanol solvent to form a gold nano-particle layer with the thickness of 100 nm.
(4) Evaporating indium tin oxide onto the gold nanoparticle layer to form an anode; and then, sealing and packaging to obtain the ultraviolet photoelectric detection device.
Example 2
The embodiment provides an ultraviolet photodetector, and a preparation method of the ultraviolet photodetector specifically comprises the following steps:
(1) blue inorganic perovskite quantum dots with the particle size of 30nm and the concentration of 30mg/mL are coated on the aluminum electrode in a spinning mode at the speed of 2000r/min to form a quantum dot light-emitting layer with the thickness of 30 microns.
(2) The polystyrene photonic crystal having a particle size of 200nm was evaporated at 250 ℃ for 40 minutes to form a 9 μm thick photonic crystal layer on the quantum dot light emitting layer.
(3) And (3) inserting the device prepared in the step (2) into a methanol solution of nano-silver with the particle size of 60nm, heating the device in an oven at the temperature of 80 ℃, and embedding nano-silver particles in the solution into gaps formed among the photonic crystals on the surface of the photonic crystal layer along with the volatilization of the methanol solvent to form a silver nano-particle layer with the thickness of 150 nm.
(4) Evaporating polyether-ether-ketone onto the silver nanoparticle layer to form a flexible polyether-ether-ketone transparent anode; and then, sealing and packaging to obtain the ultraviolet photoelectric detection device.
Example 3
The embodiment provides an ultraviolet photodetector, and a preparation method of the ultraviolet photodetector specifically comprises the following steps:
(1) and (3) spin-coating blue graphene quantum dots with the particle size of 20nm and the concentration of 30mg/mL on an aluminum electrode at the speed of 2500r/min to form a quantum dot light-emitting layer with the thickness of 20 microns.
(2) Polycarbonate photonic crystals having a particle size of 150nm were evaporated at 180 ℃ for 25 minutes to form a photonic crystal layer of 5 μm thickness on the quantum dot light emitting layer.
(3) And (3) inserting the device prepared in the step (2) into a methanol solution of nano-gold with the particle size of 40nm, heating in an oven at 85 ℃, and embedding nano-gold particles in the solution into gaps formed among the photonic crystals on the surface of the photonic crystal layer along with the volatilization of an ethanol solvent to form a gold nano-particle layer with the thickness of 120 nm.
(4) Evaporating indium zinc oxide onto the gold nanoparticle layer to form an anode; and then, sealing and packaging to obtain the ultraviolet photoelectric detection device.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims (15)

1. A photodetector, comprising: a first electrode, a second electrode, a light emitting layer disposed between the first electrode and the second electrode, and a reinforcing layer disposed between the light emitting layer and the first electrode;
the material of the reinforcing layer comprises: metal nanoparticles and photonic crystals.
2. The photodetector of claim 1, wherein the first electrode is a transparent electrode, and the enhancement layer is capable of receiving light incident through the first electrode; and/or
The particle size of the metal nano-particles is 50-200 nm.
3. The photodetector of claim 1, wherein the enhancement layer comprises a photonic crystal layer and a metal nanoparticle layer, which are sequentially disposed, and a contact interface between the photonic crystal layer and the metal nanoparticle layer is physically doped with the metal nanoparticles.
4. The photodetector of claim 3, wherein the photonic crystal layer has a thickness of 1-10 microns; and/or
The thickness of the metal nanoparticle layer is 100-150 nm.
5. The photodetector of any one of claims 1 to 3, wherein the light-emitting layer has an emission wavelength of 400-450 nm;
the particle size of the metal nano-particles is 50-80 nanometers, and/or the particle size of the photonic crystal is 200-350 nanometers.
6. The photodetector of any one of claims 1 to 3, wherein the light-emitting layer has an emission wavelength of 500-550 nm;
the particle size of the metal nano-particles is 80-120 nanometers; and/or the particle size of the photonic crystal is 350-500 nm.
7. The photodetector of any one of claims 1 to 3, wherein the light-emitting layer has an emission wavelength of 600-650 nm;
the particle size of the metal nanoparticles is 120-180 nm; and/or the particle size of the photonic crystal is 500-700 nm.
8. The photodetector of any one of claims 1 to 3, wherein the weight ratio of the metal nanoparticles to the photonic crystals in the enhancement layer is (2-5): 1.
9. The photodetector of any one of claims 1 to 3, wherein the material of the photonic crystal is selected from at least one of polymethylmethacrylate, opal, polycarbonate, and polystyrene.
10. The photodetector of any one of claims 1 to 3, wherein the metal nanoparticles are selected from at least one of gold nanoparticles, silver nanoparticles, copper nanoparticles, zinc nanoparticles, and platinum nanoparticles.
11. A method for preparing a photoelectric detector is characterized by comprising the following steps of preparing an enhancement layer:
depositing a reinforcement layer on a substrate, the reinforcement layer comprising a material comprising: metal nanoparticles and photonic crystals;
when the substrate is a first electrode, the step of depositing the enhancement layer on the substrate comprises: depositing a reinforcement layer on the first electrode;
when the substrate is a second electrode, the substrate comprises the second electrode and a light-emitting layer arranged on the second electrode, and the step of depositing the enhancement layer on the substrate comprises: depositing a reinforcement layer on the light emitting layer.
12. The method of claim 11, wherein the first electrode is a transparent electrode, and the reinforcing layer is capable of receiving light incident through the first electrode; and/or
The particle size of the metal nano-particles is 50-200 nm.
13. The method of claim 11, wherein the step of depositing the enhancement layer on the substrate comprises:
depositing a photonic crystal layer on the substrate;
and depositing a metal nanoparticle solution on the photonic crystal layer, and performing heating treatment to form an enhancement layer.
14. The production method according to claim 13, wherein the thickness of the photonic crystal layer is 1 to 10 μm; and/or
The thickness of the metal nanoparticle layer is 100-150 nm.
15. The method of any one of claims 11 to 14, wherein the weight ratio of the metal nanoparticles to the photonic crystals in the reinforcing layer is (2-5): 1.
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