CN113064330A - Digital mask process based on maskless photoetching machine - Google Patents
Digital mask process based on maskless photoetching machine Download PDFInfo
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- CN113064330A CN113064330A CN202110344156.1A CN202110344156A CN113064330A CN 113064330 A CN113064330 A CN 113064330A CN 202110344156 A CN202110344156 A CN 202110344156A CN 113064330 A CN113064330 A CN 113064330A
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- ultraviolet light
- bitmap image
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- process based
- mask process
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention relates to a digital mask process based on a maskless photoetching machine, which is characterized in that a designed graph is processed by software to generate a black-white binary bitmap image, then the bitmap image is transmitted into a DMD (digital micromirror device), ultraviolet light is reflected by the part of the bitmap image corresponding to the ultraviolet light by utilizing the characteristic of the DMD, the ultraviolet light is not reflected by a black area, and the ultraviolet light is reflected by a white area, so that a sample is correctly exposed, and photoetching is completed. The invention can realize high-efficiency photoetching, improve the working efficiency and improve the accuracy.
Description
Technical Field
The invention relates to a digital mask process based on a maskless photoetching machine.
Background
In the development of modern integrated circuits, uv lithography plays an irreplaceable role. The ultraviolet lithography technique is a process of performing space-selective exposure on ultraviolet-sensitive photoresist by using an ultraviolet light source and then transferring a designed circuit layout onto a silicon wafer to form an integrated circuit. The resolution and overlay accuracy of the lithography machine directly determine the integration level of the manufactured integrated circuit, and also become key indexes for evaluating the quality of the lithography equipment.
The conventional photoetching machine needs to customize an optical mask plate, so that the price is high, and the flexibility is poor. Any design changes require the mask to be remanufactured. The laser direct writing equipment has high flexibility and can achieve high precision, but the exposure efficiency is low due to line-by-line scanning. In recent years, technologies based on spatial light modulators (DMD/DLP) have achieved a great deal of progress in ultraviolet exposure.
The traditional method for photoetching by using a mask needs to design a layout firstly and then send the layout to be processed, the period is long, the design details need to be repeatedly knocked, the laser direct-writing photoetching needs to be scanned line by line, and the equipment is expensive.
Disclosure of Invention
In order to solve the above technical problems, an object of the present invention is to provide a digital mask process based on a maskless lithography machine.
In order to achieve the purpose, the invention adopts the following technical scheme:
a digital mask process based on a maskless photoetching machine is characterized in that a designed graph is processed by software to generate a black-white binary bitmap image, the bitmap image is transmitted into a DMD, ultraviolet light is reflected by the part, corresponding to the bitmap image, of the ultraviolet light by utilizing the characteristics of the DMD, the ultraviolet light is not reflected in a black area, the ultraviolet light is reflected in a white area, a sample is correctly exposed, and photoetching is completed.
Preferably, in the digital mask process based on the maskless lithography machine, the proportion of different objective lens magnifications is set before the bitmap image is generated.
Preferably, in the digital mask process based on the maskless lithography machine, the generation software is GDS editing software.
Preferably, in the digital mask process based on the maskless lithography machine, each pixel at different objective magnification represents an actual distance of 1 micron.
By the scheme, the invention at least has the following advantages:
the invention can adopt the ultraviolet lithography machine to the designed graph through the characteristics of the black area and the white area aiming at different ultraviolet lights, so that the graph can be rapidly lithographically formed, and simultaneously, the corresponding different pixel proportions can be confirmed, so that the product accuracy is improved.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic diagram of a black and white binary image of a bitmap image of the present invention;
fig. 2 is a schematic diagram of a pixel of a bitmap image of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Examples
As shown in fig. 1, in a digital mask process based on a maskless lithography machine, a designed pattern is processed by software to generate a binary black-and-white bitmap image, and then the bitmap image is transmitted to a DMD (digital micromirror device), ultraviolet light is reflected by a part of the bitmap image corresponding to the ultraviolet light by using the characteristics of the DMD, the ultraviolet light is not reflected by a black area, and the ultraviolet light is reflected by a white area, so that a sample is correctly exposed, and lithography is completed.
The generation software in the invention is GDS editing software.
In the above-mentioned lithography process, the ultraviolet light is finally emitted from the objective lens after being reflected by a specific region of the DMD in the lithography, so that a ratio is generated between the size of the bitmap image and the final image according to the difference of the magnification of the objective lens, 2 pixels under a 20x objective lens represent the actual distance of 1 micron, five pixels under a 50x objective lens represent the actual distance of 1 micron, ten pixels under a 100x objective lens represent the actual distance of 1 micron, when the image is generated, the image drawn by the image through GDS editing software is generated according to a certain ratio, the image in the file format has no unit, and under the condition that the unit is set to be one micron, the ratio of different magnifications is calculated, so that the derived image can meet the use requirement of the lithography machine, and the 20x objective lens is a mask image with two pixels representing one micron.
As shown in fig. 2, the side length of the thin white square in the figure is 10 pixels, the thickness of the cross is 8 pixels, under a 20x objective, the side length of the final photo-etched white square is actually 5 micrometers, the thickness of the cross is actually 4 micrometers, under a 50-fold objective, the actual side length of the white square is 2 micrometers, and the actual thickness of the cross is 1.6 micrometers.
Software used in the invention is not specified, and any GDS editing software or CAD editing software based on the QT framework can realize the functions through development.
In the complete manufacturing process of the digital mask, the original image is firstly obtained, and the sources of the image can be divided into two types: the graphics directly drawn on the editing software and the drawn graphics files in the GDS, DXF and other formats.
The data after the image drawing is stored according to a GDS metadata format, and the data can be displayed on a canvas object in software after being opened (the canvas object can be regarded as a drawing area of drawing software, a drawn graph can be displayed on the canvas in real time, and meanwhile, the data for drawing the graph is stored in a memory in the GDS format). By using a QImage function under a QT frame, GDS format data is made to be image matrix data required by generating a bitmap format, and the proportion of a picture at the moment is the proportion relative to the current resolution of a canvas, and as a photoetching machine needs to correspond to the actual length when using the picture, for example: two pixels are corresponding to 1 micron under 20 times, and the actual corresponding conditions under different resolutions are consistent (for example, two pixels are corresponding to 1 micron under 20 times, two pixels are corresponding to 1 micron in a picture with the resolution of 1080 × 1080 or 9720 × 9720, two pixels are corresponding to 1 micron, and the condition that the resolution affects the size of the image does not exist), so before generating a bitmap image, data generated by QImage needs to be converted according to corresponding parameters, the image matrix data at the moment is the corresponding image under the required objective magnification, a bitmap head file is added to the image matrix data by using a QImageWriter function, the bitmap image is generated and stored in a computer, and reading used by a photoetching machine is waited.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, it should be noted that, for those skilled in the art, many modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (4)
1. A digital mask process based on a maskless photoetching machine is characterized in that: the designed graph is processed by software to generate a black-white binary bitmap image, then the bitmap image is transmitted into the DMD, the ultraviolet light is reflected by the part of the bitmap image corresponding to the ultraviolet light by utilizing the characteristic of the DMD, the ultraviolet light is not reflected by a black area, and the ultraviolet light is reflected by a white area, so that a sample is correctly exposed, and photoetching is completed.
2. The digital mask process based on the maskless lithography machine according to claim 1, characterized in that: the proportions at different objective magnifications are set before the bitmap image is generated.
3. The digital mask process based on the maskless lithography machine according to claim 1, characterized in that: the generation software is GDS editing software.
4. The maskless lithography machine-based digital reticle process according to claim 2, characterized in that: each pixel at a different objective magnification represents a real distance of 1 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110344156.1A CN113064330B (en) | 2021-03-31 | 2021-03-31 | Digital mask process based on maskless photoetching machine |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110344156.1A CN113064330B (en) | 2021-03-31 | 2021-03-31 | Digital mask process based on maskless photoetching machine |
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| CN113064330A true CN113064330A (en) | 2021-07-02 |
| CN113064330B CN113064330B (en) | 2022-09-20 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102880892A (en) * | 2012-08-30 | 2013-01-16 | 天津芯硕精密机械有限公司 | Method for adding barcodes in real time during exposure of mask-free photoetching machine |
| CN108303860A (en) * | 2018-03-26 | 2018-07-20 | 西安电子科技大学 | A kind of distributed exposure method for maskless lithography scanning |
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- 2021-03-31 CN CN202110344156.1A patent/CN113064330B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102880892A (en) * | 2012-08-30 | 2013-01-16 | 天津芯硕精密机械有限公司 | Method for adding barcodes in real time during exposure of mask-free photoetching machine |
| CN108303860A (en) * | 2018-03-26 | 2018-07-20 | 西安电子科技大学 | A kind of distributed exposure method for maskless lithography scanning |
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| CN113064330B (en) | 2022-09-20 |
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