CN113063968A - Method for regulating photoelectric property of atomic size device by electric field - Google Patents
Method for regulating photoelectric property of atomic size device by electric field Download PDFInfo
- Publication number
- CN113063968A CN113063968A CN202110283405.0A CN202110283405A CN113063968A CN 113063968 A CN113063968 A CN 113063968A CN 202110283405 A CN202110283405 A CN 202110283405A CN 113063968 A CN113063968 A CN 113063968A
- Authority
- CN
- China
- Prior art keywords
- channel length
- atomic
- electric field
- curve
- regulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
The invention discloses a method for regulating and controlling photoelectric performance of an atomic size device through an electric field, which comprises the steps of firstly building a photoelectric device with an atomic channel length, controlling the change of the photoelectric performance by regulating the channel length under the action of the electric field, realizing the controllable regulation of the atomic channel length by measuring the channel length with the precision of 0.01nm to reach the atomic level and applying the electric field, thereby realizing the regulation and control of the conductivity and the photoelectric on-off ratio of the device and establishing the quantitative association of the atomic channel length and the photoelectric performance. The invention has very important guiding function on the performance of devices such as a field effect transistor, a photoelectric detector, a sensor and the like and the design of the whole MEMS.
Description
Technical Field
The invention belongs to the technical field of semiconductor testing, and particularly relates to an electric field regulation and control method for photoelectric performance of an atomic size device.
Background
The C-AFM is a conductive module of an atomic force microscope, and is combined with an external conductive circuit on the basis of an AFM contact mode, a certain bias voltage is applied between a needle point and a sample, and the current value between a conductive probe and the sample is recorded, and the C-AFM is used for measuring local conductivity, local piezoelectricity, photoelectric properties and the like. (Advanced Materials,2015,27(4): 695-. (Applied Surface Science,2006,252, (6):2375-
The main method for regulating and controlling the photoelectric property comprises the following steps: surface plasmon effect (appl. phys. lett.2011,13: 3678-. However, the above method has some disadvantages that the plasma effect-enhancing effect is selective to the thin film substrate and the operation process is complicated; the research of surface modification by laser irradiation is many, but the quantitative correlation between irradiation and photoelectric property is not established; doping can control the photoelectric properties, but can degrade the crystalline quality of the nanomaterial. Therefore, the photoelectric property of the semiconductor nano device is effectively regulated, and the semiconductor nano device has important significance for constructing a high-performance photoelectric device of the semiconductor nano device, in particular a vertical structure device (Science advances,2019,5(12): eaax 6061.).
Photolithography (Small,2018,14(49):1870239.) and electron beam exposure (Nature nanotechnology,2011,6(3):147.) are conventional methods for building devices with channel lengths. However, the above method cannot adjust the device channel length. Research by related researchers finds that as electronic devices and photoelectric devices are smaller and smaller in size, the channel length is reduced, and the reduction of the channel length to an atomic scale can generate different properties and has a great influence on device and circuit performance and semiconductor device design optimization, namely the channel length has a great influence on the photoelectric performance of the device (ACS nano,2015,9(3): 2843-2855.).
Therefore, the deep research on the influence of the atomic channel length on the photoelectric performance of the device plays a very important role in the design of the whole integrated circuit.
Disclosure of Invention
The present application is directed to solving at least one of the problems in the prior art. Therefore, one of the objectives of the present invention is to provide a method for adjusting the photoelectric properties of atomic scale devices by electric field.
In order to solve the technical problems, the invention adopts the following technical scheme:
a method for regulating photoelectric properties of an atomic size device by an electric field comprises the steps of applying bias voltage for set time to the atomic size device by utilizing a C-AFM to realize regulation of the length of an atomic channel, and calculating the conductivity and the on-off ratio of the device under each corresponding channel length after the bias voltage action through testing an I-V curve and an I-T curve of the atomic size device after the bias voltage action, so as to obtain relational expressions of the channel length and the conductivity as well as the channel length and the on-off ratio.
Further, the specific process is as follows:
the method comprises the following steps: building an electric field
Placing the device on a C-AFM sample stage, and connecting the device and a conductive probe into a loop through a lead;
step two: measuring channel length
Firstly, recording an original topography of an atomic device and measuring the height of the original topography to obtain an initial channel length, applying a fixed bias voltage for a set time through a C-AFM (carbon-atomic force microscope), so that a contact part of a sample and a needle point is subjected to an electric field effect, recording the topography of the atomic device after the bias voltage for the set time is applied, and making a height map to obtain the channel length after the electric field effect;
step three: testing photoelectric properties
Performing electrical tests on the device after the bias voltage is applied, wherein the electrical tests comprise an I-V curve test and an I-T curve test, and calculating the conductivity and the on-off ratio of the device corresponding to the channel length after the electric field is acted according to the I-V curve and the I-T curve obtained by the tests;
step four: establishes the quantitative correlation between the atomic channel length and the photoelectric performance
And fitting to obtain a relational expression of the channel length and the conductivity and the channel length and the on-off ratio according to the conductivity and the on-off ratio of the device under the corresponding channel length after the electric field obtained by the step three acts.
Further, the procedure for testing the I-T curve is as follows: and the laser focusing lens is arranged in a sample chamber of the C-AFM and is connected with a laser through an optical fiber, an optical signal is introduced into a contact area of the conductive probe and the device, and an I-T curve under the square wave pulse condition is measured.
Further, the specific process of device construction is as follows: and plating a Pt layer on the substrate, transferring the semiconductor nano material onto the Pt layer, and enabling the conductive probe to be in contact with the semiconductor nano material so that the conductive probe, the semiconductor nano material and the power supply form a loop.
Furthermore, one end of the power supply is connected with the conductive probe, the other end of the power supply is connected with the sample stage or the Pt layer, and the sample stage is a conductive sample stage.
Further, the substrate is a Si substrate.
Further, the method comprises the following steps: the Pt layer is plated on the substrate in a magnetron sputtering mode.
Further, after the substrate coated with the Pt is washed by deionized water → washed by ethanol → dried, the semiconductor nano material is transferred to the Pt layer by a micro-mechanical stripping method.
Further, the thickness of the Pt layer is 150 nm.
Compared with the prior art, the invention has the following advantages: the invention realizes the controllable adjustment of the atomic channel length by applying an electric field to an atomic device, calculates the conductivity and the current on-off ratio under the corresponding channel length according to the measured I-V curve and I-T curve, establishes the quantitative association between the atomic channel length and the photoelectric property, and has the accuracy of measuring the channel length up to 0.01nm, thereby realizing the adjustment and control of the atomic channel length and having very important guiding function on the performance of devices such as a field effect transistor, a photoelectric detector, a sensor and the like and the design of the whole MEMS.
Drawings
FIG. 1 is a schematic test diagram;
FIG. 2 is a raw topography;
FIG. 3 is a graph of the topography after the electric field is applied;
FIG. 4 is a graph of channel length for different bias application times;
FIG. 5 is an I-T curve corresponding to different bias application times;
FIG. 6 is a graph of current switching ratio versus time (T) for different bias application times;
fig. 7 is a graph of channel length versus current on-off ratio.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, a method for regulating photoelectric properties of an atomic scale device by an electric field includes the following steps:
the method comprises the following steps: atomic device building
Plating a Pt layer on a substrate, transferring a semiconductor nano material onto the Pt layer, and enabling a conductive probe to be in contact with the semiconductor nano material to enable the conductive probe, the semiconductor nano material and a power supply to form a loop so as to apply an electric field to the material;
step two: measuring channel length
Measuring raw channel length
Recording a topography of the atomic device through an atomic force microscope, and making a height map to obtain an initial channel length;
measuring channel length after electric field
Applying fixed bias voltage for a set time to the atomic device through the conductive probe, recording the topography of the atomic device under different bias duration time and making a height map to obtain the channel length of the atomic device under different bias duration time;
step three: testing photoelectric properties
And performing electrical test on the atomic device after the bias voltage is applied for set time, wherein the electrical test comprises I-V curve test and I-T curve test, and calculating the conductivity and the on-off ratio of the atomic device under the corresponding channel length according to the I-V curve and the I-T curve obtained by the test.
Step four: establishes the quantitative correlation between the atomic channel length and the photoelectric performance
And fitting to obtain a relational expression of the channel length and the conductivity and the channel length and the on-off ratio according to the conductivity and the on-off ratio of the device under the corresponding channel length after the bias voltage obtained by the third step is acted.
The specific procedure of the I-T curve test is as follows: the laser focusing lens is arranged in a sample chamber of the conductive atomic force microscope and is connected with the laser through an optical fiber, an optical signal is introduced into a contact area of the conductive probe and an atomic device, a square wave pulse is applied to the atomic device, the voltage value of the square wave pulse is equal to that in the third step, the current values of different optical signals in a loop under the action time are measured, and an I-T curve is drawn;
the invention realizes the controllable adjustment of the atomic channel length by applying an electric field to an atomic device (in the embodiment, the device is biased by using a conductive atomic force microscope), obtains an I-V curve and an I-T curve of the device under the corresponding channel length by electrically testing the atomic device after applying the bias for a set time, and has the advantages of applying square-wave pulse voltage (1 Hz-0.5V) in the electrical testing process, small voltage and short testing process (6 seconds), so the influence on the channel length can be ignored. According to the measured I-V curve and I-T curve, the conductivity and current on-off ratio under the corresponding channel length are calculated, the quantitative correlation between the atomic channel length and the photoelectric performance is established, the accuracy of measuring the atomic channel length reaches 0.01nm, and the method plays an important guiding role in the performance of devices such as a field effect transistor, a photoelectric detector, a sensor and the like and the design of the whole MEMS.
The present invention will be further described with reference to the following test examples and the accompanying drawings.
With nano functional material MoS2To illustrate, a 150nmPt layer is first plated on a Si substrate by magnetron sputtering, the substrate is washed with deionized water → washed with alcohol → dried, and MoS is then deposited2Transferring the Pt layer to a Pt layer by a micro-mechanical stripping method, placing an atomic device on a C-AFM sample stage, and connecting the atomic device and a conductive probe into a loop through a lead.
Referring to fig. 2 and 3, MoS is first measured using a conductive atomic force microscope2Original channel length, and measuringObtaining an original I-V curve and an original I-T curve under the condition of square wave pulse, applying fixed bias for a certain time through C-AFM, and recording the MoS after bias application2The topography map is used for obtaining the channel length after the electric field is acted, and according to the change rule of the channel length in different time periods under the fixed bias voltage, the quantitative relation between V multiplied by T (V represents the bias voltage magnitude, and T represents the bias voltage acting time) and the channel length is established through a fitting curve, and the quantitative relation is shown in figure 4.
And (3) carrying out electrical test on the atomic device after the bias voltage with set time is applied, measuring an I-V curve and an I-T curve under the condition of square wave pulse (1Hz, -0.5V), and finally calculating the conductivity and the current on-off ratio of the atomic device after the action of an electric field according to the measured I-V curve and the I-T curve, wherein FIG. 5 is the I-T curve corresponding to different channel lengths, and FIG. 6 shows the I-T curves corresponding to different channel lengths.
The channel length versus current switching ratio is shown in fig. 7: by combining fig. 4, the one-to-one correspondence relationship between the channel length and the current on-off ratio can be obtained, thereby realizing quantitative regulation and control of photoelectric properties.
In summary, the embodiment utilizes the conductive atomic force microscope to construct the MoS2Atomic scale channel length device, measuring MoS2The relationship between the channel length and the I-V curve and the I-T curve, thereby better regulating and controlling MoS2The photoelectric properties of (1).
The above examples are merely illustrative for clearly illustrating the present invention and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. Nor is it intended to be exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the scope of the invention.
Claims (9)
1. A method for regulating and controlling photoelectric performance of an atomic size device is characterized by comprising the following steps: the method comprises the steps of applying a local electric field to an atomic device to adjust the channel length of the atomic device, and calculating the conductivity and the on-off ratio of the device under the corresponding channel length after the action of the electric field through testing the I-V curve and the I-T curve of the atomic device after the action of the electric field, so as to obtain the relational expressions of the channel length and the conductivity and the channel length and the on-off ratio.
2. A regulation and control method according to claim 1, characterized in that the specific process is as follows:
the method comprises the following steps: building an electric field
Placing the device on a sample stage of a conductive atomic force microscope (C-AFM), and connecting the device and a conductive probe into a loop through a lead;
step two: measuring channel length
Firstly, recording an original topography of an atomic device and measuring the height of the original topography to obtain an initial channel length, applying a fixed bias voltage for a set time through a C-AFM (carbon-atomic force microscope), so that a contact part of a sample and a needle point is subjected to an electric field effect, recording the topography of the atomic device after the bias voltage for the set time is applied, and making a height map to obtain the channel length after the electric field effect;
step three: testing photoelectric properties
Performing electrical tests on the device after the bias voltage is applied, wherein the electrical tests comprise an I-V curve test and an I-T curve test, and calculating the conductivity and the on-off ratio of the device corresponding to the channel length after the bias voltage is applied according to the I-V curve and the I-T curve obtained by the tests;
step four: establishing quantitative correlation between atomic-level channel length and photoelectric performance
And fitting to obtain a relational expression of the channel length and the conductivity and the channel length and the on-off ratio according to the conductivity and the on-off ratio of the device under the corresponding channel length after the bias voltage obtained by the third step is acted.
3. The method of claim 2, wherein the step of: the procedure for testing the I-T curve is as follows: and the laser focusing lens is arranged in a sample chamber of the C-AFM and is connected with a laser through an optical fiber, an optical signal is introduced into a contact area of the conductive probe and the device, and an I-T curve under the square wave pulse condition is measured.
4. The regulation and control method according to claim 2 or 3, wherein: the specific process of atomic device building is as follows: and plating a Pt layer on the substrate, transferring the semiconductor nano material onto the Pt layer, and enabling the conductive probe to be in contact with the semiconductor nano material so that the conductive probe, the semiconductor nano material and the power supply form a loop.
5. The method of regulating as claimed in claim 4, wherein: one end of the power supply is connected with the conductive probe, the other end of the power supply is connected with the sample stage or the Pt layer, and the sample stage is a conductive sample stage.
6. The method of regulating as claimed in claim 4, wherein: the substrate is a Si substrate.
7. The method of regulating as claimed in claim 4, wherein: the Pt layer is plated on the substrate in a magnetron sputtering mode.
8. The method of regulating as claimed in claim 4, wherein: and (3) washing the substrate plated with the Pt by deionized water → washing by ethanol → drying, and transferring the semiconductor nano material to the Pt layer by a micro-mechanical stripping method.
9. The method of regulating as claimed in claim 4, wherein: the thickness of the Pt layer is 150 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110283405.0A CN113063968A (en) | 2021-03-17 | 2021-03-17 | Method for regulating photoelectric property of atomic size device by electric field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110283405.0A CN113063968A (en) | 2021-03-17 | 2021-03-17 | Method for regulating photoelectric property of atomic size device by electric field |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113063968A true CN113063968A (en) | 2021-07-02 |
Family
ID=76560836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110283405.0A Pending CN113063968A (en) | 2021-03-17 | 2021-03-17 | Method for regulating photoelectric property of atomic size device by electric field |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113063968A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107342345A (en) * | 2017-06-27 | 2017-11-10 | 重庆大学 | A kind of phototransistor based on ferroelectricity gate medium and thin layer molybdenum disulfide raceway groove |
| CN109817757A (en) * | 2019-01-18 | 2019-05-28 | 中国空间技术研究院 | One kind two tungsten selenide thin slices/zinc oxide nano-belt junction field effect transistor photodetector and preparation method thereof |
-
2021
- 2021-03-17 CN CN202110283405.0A patent/CN113063968A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107342345A (en) * | 2017-06-27 | 2017-11-10 | 重庆大学 | A kind of phototransistor based on ferroelectricity gate medium and thin layer molybdenum disulfide raceway groove |
| CN109817757A (en) * | 2019-01-18 | 2019-05-28 | 中国空间技术研究院 | One kind two tungsten selenide thin slices/zinc oxide nano-belt junction field effect transistor photodetector and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 穆军政: "光、电场对MoS2纳米片电学性能的影响", 《中国优秀硕士学位论文全文数据库 工程科技Ⅰ辑》, no. 2, 15 February 2021 (2021-02-15), pages 13 - 32 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Tian et al. | The fabrication and characterization of adjustable nanogaps between gold electrodes on chip for electrical measurement of single molecules | |
| US20140193585A1 (en) | Method for Modifying Probe Tip | |
| CN113063968A (en) | Method for regulating photoelectric property of atomic size device by electric field | |
| Zhang et al. | Facilely Achieved Self‐Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100% | |
| JP2006278638A (en) | Process for fabricating semiconductor element, semiconductor element, and semiconductor device | |
| CN110164993A (en) | A kind of ultraviolet band multi-wavelength detector and preparation method thereof | |
| Lin et al. | Polarity‐Dependent Piezotronic Effect and Controllable Transport Modulation of ZnO with Multifield Coupled Interface Engineering | |
| CN116666498A (en) | Simply prepared plasmon-modified MoS 2 Wide-spectrum photosensitive field effect transistor and preparation method thereof | |
| KR20190140329A (en) | Perovskite device and method of forming thereof | |
| CN104217931A (en) | Graphene doping method and doped graphene | |
| CN114335335A (en) | Method for adjusting gap distance in metal tunneling junction | |
| CN101783364A (en) | Nano electronic device and manufacturing method thereof | |
| CN105845567B (en) | Utilize the technique of physical method preparation nanometer Schottky junction structure | |
| JP2006278639A (en) | Process for fabricating semiconductor element, and semiconductor device | |
| Korte et al. | Surface photovoltage investigation of recombination at the a-Si/c-Si heterojunction | |
| CN114709280B (en) | Photoelectric detector and preparation method thereof | |
| Hou | Self-powered infrared detection, polarization sensing, and visual synaptic behavior in a multifunctional MoS 2/Ta 2 NiS 5 heterojunction | |
| CN117293208B (en) | Photoelectric detector based on lead sulfide/silicon composite structure and preparation method thereof | |
| CN113138294B (en) | Method for regulating and controlling concentration of two-dimensional electron gas | |
| CN112563400B (en) | Photo-thermal detector based on platinum diselenide-bismuth telluride and preparation method thereof | |
| CN116081612B (en) | Method for preparing graphene sub-nanoscale gap through feedback control electric breakdown | |
| CN116525457A (en) | Floating gate memory with adjustable storage duration based on two-dimensional material and preparation process thereof | |
| Mukherjee et al. | Photoconductivity in VO2–ZnO Inter-Nanowire Junction and Nanonetwork Device | |
| Aidil et al. | Fabrication and characterization of poly-Si nanowire with Thin Film of Ni/Au contact pad using conventional photolithography | |
| Eladl et al. | Experimental Performance Analysis of Fabricated Si/Ge Thin Film Structure. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20210702 |
|
| WD01 | Invention patent application deemed withdrawn after publication |