CN113050365A - Optical proximity correction method and system, mask, equipment and medium - Google Patents
Optical proximity correction method and system, mask, equipment and medium Download PDFInfo
- Publication number
- CN113050365A CN113050365A CN201911380358.0A CN201911380358A CN113050365A CN 113050365 A CN113050365 A CN 113050365A CN 201911380358 A CN201911380358 A CN 201911380358A CN 113050365 A CN113050365 A CN 113050365A
- Authority
- CN
- China
- Prior art keywords
- pattern
- optical proximity
- semicircular
- graph
- minimum length
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012937 correction Methods 0.000 title claims abstract description 150
- 238000000034 method Methods 0.000 title claims abstract description 80
- 230000003287 optical effect Effects 0.000 title claims abstract description 60
- 238000011161 development Methods 0.000 claims description 16
- 241001212149 Cathetus Species 0.000 claims description 9
- 238000004364 calculation method Methods 0.000 claims description 8
- 238000012544 monitoring process Methods 0.000 claims description 6
- 238000000605 extraction Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 238000010586 diagram Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 6
- 238000004088 simulation Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012942 design verification Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Abstract
The invention provides an optical proximity correction method and system, a mask, equipment and a medium, wherein the optical proximity correction method comprises the following steps: providing an original layout graph, wherein the original layout graph comprises a first graph and a second graph which are adjacent, extracting a first central point of a first end part in the first graph and a second central point of a second end part in the second graph, taking a connecting line of the first central point and the second central point as a hypotenuse, establishing a right triangle, taking the minimum length of the hypotenuse and the second right-angle side in the right triangle, and calculating to obtain the minimum length of the first right-angle side; obtaining the minimum width of the precompensation correction gap according to the minimum length of the first right-angle edge; and adding a pre-compensation correction gap on the original layout graph according to the minimum width of the pre-compensation correction gap to obtain the corrected layout. The invention improves the yield of chip production.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to an optical proximity correction method and system, a mask, equipment and a medium.
Background
With the rapid development of Integrated Circuit (IC) manufacturing technology, the process nodes of the conventional IC are gradually reduced, and the size of the IC devices is continuously reduced. In the deep submicron semiconductor manufacturing process, as the feature size is continuously reduced and the pattern complexity becomes higher and higher, the Optical Proximity Correction (OPC) technology has been widely applied to the mask plate publication of each key level. The OPC method which is most widely applied at present is a model-based OPC correction method, and the basic principle of the OPC method is that an exposure model based on specific photoetching conditions is established, an original layout or a target layout is simulated to obtain a simulation error, then the original layout is segmented and cut according to a certain rule, a fragment is subjected to offset compensation and re-simulation according to the simulation error, and a corrected layout with a simulation result consistent with the target layout is obtained through simulation and correction of a plurality of rounds.
For corner-to-corner patterns (corner-to-corner designs) in an original layout, bridge connection is easy to occur after the patterns are transferred from a mask to a wafer, as shown in fig. 1, and further the yield of a chip is affected, so an OPC method is generally adopted in the industry to prevent the corner-to-corner patterns from generating bridge connection. The current OPC method is generally divided into three steps, the first step is to create a pre-compensation modified design, the second step is to add a compensation module to the original pattern, and the third step is to perform design verification. The first step is the key to influence whether the etched graph is bridged, if an engineer obtains an accurate improved data design, the bridging problem can be well improved, but the currently adopted method for establishing the pre-compensation improved design mostly depends on the experience of the engineer, the same set of correction design is often adopted for different corner diagonal graphs, the influence of a process window is not considered, along with the continuous reduction of the characteristic size, how to deal with the problem of bridging the corner diagonal graphs of different sizes, and enough process windows are reserved at the same time, so that the problem to be solved by technical personnel in the field is urgently needed.
Disclosure of Invention
The invention provides a method and a system for correcting optical proximity, a mask, equipment and a medium, which are used for providing a larger process window and further improving the yield of chip production.
In order to solve the above problems, the present invention provides an optical proximity correction method and system, a reticle, a device and a medium, wherein the optical proximity correction method comprises:
providing an original layout graph, wherein the original layout graph comprises a first graph and a second graph which are adjacent, and a first end part of the first graph is close to a second end part of the second graph;
extracting a first central point of the first end part and a second central point of the second end part, and establishing a right-angled triangle by taking a connecting line of the first central point and the second central point as a hypotenuse, wherein the right-angled triangle further comprises a first right-angled edge and a second right-angled edge, the first right-angled edge is parallel to the correction direction, and the second right-angled edge is perpendicular to the correction direction;
extracting the minimum length of the hypotenuse and the minimum length of a second right-angle side in the right-angle triangle, and calculating to obtain the minimum length of the first right-angle side;
obtaining the minimum width of the precompensation correction gap according to the minimum length of the first right-angle edge;
and adding a pre-compensation correction gap on the original layout graph according to the minimum width of the pre-compensation correction gap to obtain a corrected layout.
Optionally, the first graph and the second graph are corner-diagonal graphs, both the first graph and the second graph are strip-shaped rectangular graphs at corners and diagonals, and the first graph and the second graph are parallel at corners and diagonals.
Optionally, in the step of building a right-angled triangle, the first right-angled side is parallel to the first figure and the second figure at the corner.
Optionally, the first end forms a first semicircular pattern after being transferred to the wafer, the second end forms a second semicircular pattern after being transferred to the wafer, and in the step of extracting the minimum length of the bevel edge and the second square edge, the minimum length of the bevel edge is obtained by adding the edge arc radii of the first semicircular pattern and the second semicircular pattern and the minimum pattern pitch between the first semicircular pattern and the second semicircular pattern.
Optionally, the line width of the first pattern is WAThe line width of the second pattern is WBThe radius of the edge arc of the first semicircular figure is based on 0.5 x n2*WAObtaining the edge arc radius of the second semi-circular graph based on 0.5 x n2*WBObtaining wherein n is2For the post-development oblique arc deformation parameter, n2Is in the range of 0.7 to 1.3.
Optionally, a minimum pattern pitch D between the first and second semi-circular patternsABAnd obtaining the target object based on a Rayleigh criterion and an exposure process window.
Optionally, the graphics overlap by a distance DABIs calculated by the formula DAB＝k1*λ/NA+kcdu+kovlWherein k1 is Rayleigh criterion factor, λ is optical wavelength, NA is lens angular aperture value, kcduAs a characteristic dimension uniformity parameter, kovlIs an overlay accuracy performance parameter.
Optionally, the method for obtaining the characteristic dimension uniformity parameter includes: and monitoring the stability coefficient, and calculating to obtain the characteristic size uniformity parameter.
Optionally, the method for obtaining the overlay accuracy performance parameter includes: and monitoring the stability coefficient, and calculating to obtain the alignment precision performance parameter.
Optionally, in the step of extracting the minimum length of the oblique edge and the second right-angle edge, the minimum length of the second right-angle edge is obtained by adding the edge arc radii of the first semicircular pattern and the second semicircular pattern, and the pattern pitch between the first semicircular pattern and the second semicircular pattern.
Optionally, in the step of extracting the minimum length of the oblique edge and the second right-angle edge, the minimum length of the second right-angle edge is the centerline distance Y between the first pattern and the second patternAB。
Optionally, the minimum length of the first right-angle side is obtained by adding the radius of the arc top of the first semicircular pattern, the radius of the arc top of the second semicircular pattern, and the distance δ AB, corner between the arc tops of the first semicircular pattern and the second semicircular pattern.
Optionally, the line width of the first pattern is WAThe line width of the second pattern is WBThe radius of the arc top of the first semicircular figure is based on 0.5 x n1*WAObtaining the radius of the arc top of the second semi-circular graph based on 0.5 x n1*WBObtaining wherein n is1For the post-development crown deformation parameter, n1Is in the range of 0.7 to 1.3.
Optionally, in the step of obtaining the minimum width of the pre-compensation correction gap according to the minimum length of the first right-angle edge, a distance δ AB between arc tops of the first and second semicircular patterns, corner ═ sqrt ((0.5 × n ═ sqrt)2*WA+DAB+0.5*n2*WB)^2-(YAB)^2)-(0.5*n1*WA+0.5*n1*WB) And taking the distance delta AB between the arc tops of the first semicircular pattern and the second semicircular pattern and the corner as the minimum width of the pre-compensation correction gap.
Optionally, in the step of adding a pre-compensation correction gap on the original layout pattern, the pre-compensation correction gap is added on one side of the first pattern, or the pre-compensation correction gap is added on one side of the second pattern.
Correspondingly, the present invention further provides an optical proximity correction system, configured to perform optical proximity correction on an original layout pattern, and add a pre-compensation correction gap on the original layout pattern, where the original layout pattern includes a first pattern and a second pattern that are adjacent to each other, and a first end of the first pattern is close to a second end of the second pattern, and the optical proximity correction system includes:
an information extraction device for extracting a first center point of the first end portion and a second center point of the second end portion;
the calculation device establishes a right-angled triangle by taking a connecting line of the first central point and the second central point as a hypotenuse according to the positions of the first central point and the second central point, and the right-angled triangle further comprises a first right-angled edge and a second right-angled edge, wherein the first right-angled edge is parallel to the correction direction, and the second right-angled edge is perpendicular to the correction direction; the calculation device is further used for calculating the minimum length of the first right-angle side according to the minimum length of the hypotenuse and the minimum length of the second right-angle side in the right-angle triangle, and obtaining the minimum width of the pre-compensation correction gap according to the minimum length of the first right-angle side;
and the correcting device is used for adding the pre-compensation correction gap on the original layout graph according to the minimum width of the pre-compensation correction gap to obtain the corrected layout.
Correspondingly, the invention also provides a mask plate, and the pattern on the mask plate is obtained by any one of the optical proximity correction methods.
Accordingly, the present invention also provides an apparatus comprising: at least one memory and at least one processor, the memory storing one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the optical proximity correction method.
Accordingly, the present invention also provides a storage medium storing one or more computer instructions for implementing the optical proximity correction method.
Compared with the prior art, the technical scheme of the invention has the following advantages: by adopting the optical proximity correction method provided by the invention, the minimum width of the pre-compensation correction gap correspondingly added to the corner diagonal patterns with different sizes can be obtained by calculating the geometric size in the original layout of the corner diagonal patterns aiming at the corner diagonal patterns with different sizes, the bridging problem formed after the pattern etching is controllably improved, and the yield of chip production is further improved.
Drawings
FIG. 1 is a schematic diagram of a mask pattern and an etched pattern on a wafer in the prior art;
FIG. 2 is a schematic diagram of a bridging phenomenon occurring after etching of the reticle pattern shown in FIG. 1;
FIG. 3 is a block diagram of an embodiment of a method for optical proximity correction;
FIG. 4 is a diagram illustrating the minimum width of the pre-compensation correction gap extracted in the optical proximity correction method according to the present invention;
FIG. 5 is a schematic diagram of the addition of a pre-compensated correction gap according to the optical proximity correction method of the present invention;
FIG. 6 is a functional block diagram of an embodiment of an optical proximity correction system of the present invention.
Detailed Description
As described in the background art, for corner-to-corner patterns (corner-to-corner designs) in an original layout, bridge connection is likely to occur after etching and forming on a wafer, as shown in fig. 1, thereby affecting the yield of chips, and therefore, an OPC method is generally used in the industry to prevent the corner-to-corner patterns from having bridge connection.
Referring to fig. 1, a diagram of a mask pattern and an etched pattern on a wafer in the prior art is shown. As shown, the a pattern 010 and the b pattern 011 are both stripe patterns, such as patterns for forming stripe gates. The A pattern 010 and the B pattern 011 are angle diagonal patterns, and the A pattern 010 and the B pattern 011 respectively and correspondingly form a first etched pattern 020 and a second etched pattern 021 in the wafer manufacturing process.
Referring to fig. 2, it is shown that since the a pattern 010 and the b pattern 011 are not corrected, after etching on the wafer, the a etched pattern 020 and the b etched pattern 021 generate bridge points 030 at the diagonal corners, which affects the yield of the chip. A common OPC method is adopted to add correction patterns between an A pattern 010 and a B pattern 011 on a mask, and the conventional method is to add the same correction patterns to different patterns according to experience without considering the influence of a process window and can also deform the developed patterns.
In order to solve the above technical problems, the present invention provides an optical proximity correction method, a mask and a chip. The bridging problem of different corner diagonal patterns generated in the semiconductor manufacturing process is improved more controllably, meanwhile, enough process windows are reserved, and the yield of chip production is improved. In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Referring to FIG. 3, a step diagram of an optical proximity correction method according to an embodiment of the present invention is shown. The optical proximity correction method of the embodiment comprises the following steps:
step S1, providing an original layout graph, wherein the original layout graph comprises a first graph and a second graph which are adjacent, and a first end part of the first graph is close to a second end part of the second graph;
step S2, extracting a first central point of the first end part and a second central point of the second end part, and establishing a right-angled triangle by taking a connecting line of the first central point and the second central point as a hypotenuse, wherein the right-angled triangle further comprises a first right-angled edge and a second right-angled edge, the first right-angled edge is parallel to the correction direction, and the second right-angled edge is perpendicular to the correction direction;
step S3, extracting the minimum length of the side of the hypotenuse and the minimum length of the second right-angle side in the right-angle triangle, and calculating to obtain the minimum length of the first right-angle side;
step S4, obtaining the minimum width of the pre-compensation correction gap according to the minimum length of the first right-angle edge;
and step S5, adding a pre-compensation correction gap on the original layout graph according to the minimum width of the pre-compensation correction gap to obtain a corrected layout.
According to the optical proximity correction method of the embodiment, the right-angled triangle is arranged in the corner-diagonal graph, the minimum length of the first corner-diagonal graph is calculated according to a geometric method, and the minimum length of the first corner-diagonal graph is the transverse minimum distance between the two corner-diagonal graphs in layout design, so that the corresponding transverse minimum distance can be calculated according to the corner-diagonal graphs with different sizes, the minimum width of the pre-compensation correction gap is further obtained, namely the pre-compensation correction gap is set in a targeted manner, and the precision of the etched graph is improved.
Specifically, please refer to fig. 4, which is a schematic diagram illustrating the minimum width of the pre-compensation correction gap extracted in the optical proximity correction method of the present embodiment. The optical proximity correction method according to the present embodiment will be described below with reference to fig. 4.
Firstly, step S1 is performed to provide an original layout pattern, where the original layout pattern includes a first pattern and a second pattern adjacent to each other, and a first end of the first pattern is close to a second end of the second pattern.
FIG. 4 shows two corner-to-corner patterns in the original layout: adjacent first graphic 101 and second graphic 102. In this embodiment, a first end (not labeled) of the first pattern 101 is adjacent to a second end of the second pattern 102.
It should be noted that, in this embodiment, the first pattern 101 and the second pattern 102 are strip-shaped rectangular patterns with diagonal corners at the diagonal corners, such as strip-shaped gate patterns, and the first pattern 101 and the second pattern 102 are parallel. However, the present invention is not limited to this, and in other embodiments, the first pattern 101 and the second pattern 102 may also be other diagonal patterns, and the first pattern 101 and the second pattern 102 may also be parallel or orthogonal patterns with ends close to each other.
To solve the bridging problem that may occur after the development etching, a pre-compensation correction gap needs to be added in the correction direction, which is the horizontal transverse direction pointed by the arrow Q1 in the present embodiment, and the correction direction is the direction in which the bridging problem is likely to occur.
Step S2 is performed to extract the first center point 203 of the first end portion and the second center point 204 of the second end portion, and a right triangle is created by using a connection line between the first center point 203 and the second center point 204 as a hypotenuse. The right-angle triangle further comprises a first right-angle side and a second right-angle side, the first right-angle side is parallel to the correction direction, and the second right-angle side is perpendicular to the correction direction.
In this embodiment, in the step of creating the right triangle, the first right side is parallel to the first figure 101 and the second figure 102 at the diagonal corner. In other cases, such as where the first and second patterns are orthogonally disposed, the first right-angle edge may be parallel to only the first pattern or the second pattern.
As shown in fig. 4, the first end portion forms a first semicircular pattern 201 after development and etching, and the second end portion forms a second semicircular pattern 202 after development. This is due to a diffraction phenomenon of an exposure process and a natural phenomenon caused by an etching process, and it is desirable that no bridging occurs in the first and second half- circular patterns 201 and 202 after development.
And step S3 is executed, the minimum length of the hypotenuse and the minimum length of the second cathetus in the right triangle are extracted, and the minimum length of the first cathetus is calculated.
In the present embodiment, in the step of extracting the minimum lengths of the hypotenuse and the second cathetus, the minimum length of the hypotenuse is defined by the edge arc radius S1 of the first semicircular pattern 201 and the edge arc radius S2 of the second semicircular pattern 202, and the pattern overlapping distance D between the first semicircular pattern 201 and the second semicircular pattern 202ABAnd adding the two to obtain the final product. As shown in the figure, the edge arc radius refers to a distance from the arc edge of the first semicircular pattern 201 to the first center point 203 and a distance from the second semicircular pattern 202 to the second center point 204 in the oblique line, which is a connection line between the first center point 203 and the second center point 204.
In this embodiment, the line width of the first pattern 101 is WAThe line width of the second pattern 102 is WBThe radius of the edge arc of the first semicircular pattern 201 is 0.5 x n2*WAThe radius of the arc of the edge of the second semi-circular pattern 202 is calculated to be 0.5 x n2*WBAnd (4) calculating.
Wherein n is2Is a parameter of the deformation of the arc of the edge after development, namely the dimensional deformation coefficient of the graph after development and the graph of the original layout, n2Is in the range of 0.7 to 1.3. The size of the arc deformation parameter of the edge after development is determined by the experience of engineers or the number of semiconductor processes in the pastThus obtaining the compound.
Thus, the minimum length of the hypotenuse is 0.5 n2*WA+DAB+0.5*n2*WBThe minimum length refers to the minimum length of the first right-angle side calculated according to the length, and the minimum width of the required added pre-compensation correction gap can be obtained.
In this embodiment, the minimum pattern pitch D between the first semicircular pattern 201 and the second semicircular pattern 202 is setABAnd calculating the Rayleigh criterion and the exposure process window. The minimum pattern pitch DABRefers to the minimum spacing between the edges of the pattern after the corner-to-corner pattern is transferred to the wafer to prevent bridging problems from occurring. After the first pattern 101 and the second pattern 102 are exposed and developed, the minimum pattern pitch D between the first semicircular pattern 201 and the second semicircular pattern 202ABIs an important factor for influencing whether the first semicircular pattern 201 and the second semicircular pattern 202 are bridged or not, and the pattern overlapping distance D between the first semicircular pattern 201 and the second semicircular pattern 202ABRefers to the minimum distance at which the first half-circle pattern 201 and the second half-circle pattern 202 may bridge after the development.
Specifically, the pattern overlap interval DABIs calculated by the formula DAB＝k1*λ/NA+kcdu+kovlWherein k1 is Rayleigh criterion factor, λ is optical wavelength, NA is lens angular aperture value, kcduIs a Characteristic Dimension (CD) uniformity parameter, kovlIs an overlay precision (overlay) performance parameter.
It should be noted that the above-mentioned pattern overlapping interval DABThe calculation formula is a calculation notice obtained according to the current photoetching process, and when the photoetching process is adjusted or improved, the formula can be adjusted into other formulas.
In this embodiment, the method for obtaining the characteristic dimension uniformity parameter includes: monitoring the stability coefficient by using a full-mapping characteristic dimension instrument, thereby calculating to obtain the characteristic dimension uniformity parameter; the method for obtaining the alignment precision performance parameters comprises the following steps: and monitoring the stability coefficient of the alignment precision by using a full-mapping alignment precision instrument, thereby calculating to obtain the alignment precision performance parameter. This has the advantage that the characteristic dimension uniformity parameter and the overlay accuracy performance parameter can be obtained relatively conveniently and accurately. However, the present invention is not limited in this regard and other tools in the existing semiconductor manufacturing process may be used to measure the feature uniformity parameter and the overlay accuracy performance parameter in other embodiments.
With continued reference to FIG. 4, in the step of extracting the minimum lengths of the hypotenuse and the second cathetus, the minimum length of the second cathetus is the distance Y between the center lines of the first graphic 101 and the second graphic 202AB。
The minimum length of the first right-angle side is obtained by adding the arc top radius S3 of the first semicircular pattern 201, the arc top radius S4 of the second semicircular pattern 202 and the distance δ AB, corner between the arc tops of the first semicircular pattern 201 and the second semicircular pattern 202.
Specifically, in the present embodiment, the radius S3 of the arc top of the first semicircular pattern 201 is set to 0.5 × n1*WAThe radius S3 of the arc top of the second semi-circular pattern 202 is calculated to be 0.5 x n1*WBAnd (4) calculating.
Wherein n is1Is the deformation parameter of the developed arc top, namely the dimensional deformation coefficient of the developed graph and the original layout graph, n1Is in the range of 0.7 to 1.3. The magnitude of the post-development dome deformation parameter is obtained from engineer experience or past semiconductor processing data.
And step S4 is executed, and the minimum width of the pre-compensation correction gap is obtained according to the minimum length of the first right-angle edge.
In this embodiment, according to a geometric relationship of three sides of the triangle, i.e. a pythagorean theorem, a distance δ AB between the arc tops of the first semicircular pattern 201 and the second semicircular pattern 202 is calculated as follows:
δAB,corner＝sqrt((0.5*n2*WA+DAB+0.5*n2*WB)^2-(YAB)^2)-(0.5*n1*WA+0.5*n1*WB)
in the present embodiment, the distance δ AB, corner between the arc tops of the first semicircular pattern 201 and the second semicircular pattern 202 is used as the minimum width of the pre-compensation correction gap.
It should be noted that, in other embodiments, the distance δ AB between the arc tops of the first semicircular pattern 201 and the second semicircular pattern 202 may also be adjusted according to the shape of the original layout pattern, which is not limited in the present invention.
And step S5, adding a pre-compensation correction gap on the original layout graph according to the minimum width of the pre-compensation correction gap to obtain a corrected layout.
Specifically, as shown in fig. 5, a schematic diagram of the optical proximity correction method of the present embodiment for adding the pre-compensation correction gap is shown. Taking the distance delta AB between the arc tops of the first semicircular pattern 201 and the second semicircular pattern 202, corner as the minimum width d of the pre-compensation correction gapABCorrecting the minimum width d of the gap according to said precompensationABAnd adding a precompensation correction gap 301 on the original layout graph to obtain a corrected layout.
It should be noted that, as shown in fig. 4 and 5, in the step of adding the pre-compensation correction gap to the original layout pattern in the present embodiment, the pre-compensation correction gap 301 is added to the second pattern 102 side, and in other embodiments, the pre-compensation correction gap may be added to the first pattern 101 side.
After the pre-compensation correction gap 301 is added in the correction direction of the first pattern 101 and the second pattern 102, the first semicircular pattern 201 and the second semicircular pattern 202 formed after exposure and development are not easy to generate a bridging phenomenon.
Therefore, according to the optical proximity correction method provided by the present embodiment, the minimum width d of the pre-compensation correction gap 301 can be obtainedABThe addition of the pre-compensation correction gap 301 can correct a bridging phenomenon that corner-diagonal patterns are liable to generate, and the minimum width of the pre-compensation correction gap 301dABThe method is obtained according to the sizes of the first graph 101 and the second graph 202, the Rayleigh criterion and the photoetching process window, so that a pre-compensation correction gap can be set in a targeted manner, the bridging phenomenon of corner-diagonal graphs is improved, the graph deformation after development is not easy to occur, and the precision of the graph after etching is improved.
The invention also provides an optical proximity correction system, which is used for performing optical proximity correction on an original layout graph, and adding a pre-compensation correction gap on the original layout graph, wherein the original layout graph comprises a first graph and a second graph which are adjacent, and a first end part of the first graph is close to a second end part of the second graph, and the optical proximity correction system comprises:
an information extraction device 200, the information extraction device 200 being configured to extract a first center point of the first end portion and a second center point of the second end portion.
The calculation device 300 is used for establishing a right-angled triangle by taking a connecting line of the first central point and the second central point as a hypotenuse according to the positions of the first central point and the second central point, and the right-angled triangle further comprises a first right-angled edge and a second right-angled edge, wherein the first right-angled edge is parallel to the correction direction, and the second right-angled edge is perpendicular to the correction direction; the calculation device is further configured to calculate the minimum length of the first right-angle side according to the minimum length of the hypotenuse and the minimum length of the second right-angle side in the right-angle triangle, and obtain the minimum width of the pre-compensation correction gap according to the minimum length of the first right-angle side.
And the correcting device 400 is used for adding a pre-compensation correction gap on the original layout graph according to the minimum width of the pre-compensation correction gap to obtain a corrected layout.
According to the optical proximity correction system provided by the embodiment, the minimum width of the pre-compensation correction gap can be obtained, the bridge phenomenon which is easily generated by the corner-diagonal pattern can be corrected by adding the pre-compensation correction gap, and the minimum width of the pre-compensation correction gap is obtained according to the sizes of the first pattern and the second pattern, the Rayleigh criterion and the photoetching process window, so that the pre-compensation correction gap can be set in a targeted manner, the bridge phenomenon of the corner-diagonal pattern is improved, the pattern deformation after the development is not easy to occur, and the precision of the pattern after the etching is improved.
It should be noted that the optical proximity correction system may be a layout design auxiliary system operating in a computer, or may be a manufacturing auxiliary system operating in a semiconductor manufacturing line.
The invention also provides a mask plate, and the graph on the mask plate is designed by the optical proximity correction method in the embodiment.
Specifically, in the reticle provided in this embodiment, a pre-compensation correction gap is provided in a corner-diagonal pattern that is likely to cause a bridge phenomenon, and a method for adding the pre-compensation correction gap includes: providing an original layout graph, wherein the original layout graph comprises a first graph and a second graph which are adjacent, and a first end part of the first graph is close to a second end part of the second graph;
extracting a first central point of the first end part and a second central point of the second end part, and establishing a right-angled triangle by taking a connecting line of the first central point and the second central point as a hypotenuse, wherein the right-angled triangle further comprises a first right-angled edge and a second right-angled edge, the first right-angled edge is parallel to the correction direction, and the second right-angled edge is perpendicular to the correction direction;
extracting the minimum length of the hypotenuse and the second right-angle side in the right-angle triangle, and calculating to obtain the minimum length of the first right-angle side;
obtaining the minimum width of the precompensation correction gap according to the minimum length of the first right-angle edge;
and adding a pre-compensation correction gap on the original layout graph according to the minimum width of the pre-compensation correction gap to obtain a corrected layout.
The mask provided by the embodiment can correct the bridging phenomenon easily generated by the corner and diagonal patterns by an improved optical proximity correction method, and the minimum width of the pre-compensation correction gap is obtained according to the sizes of the first pattern and the second pattern, the Rayleigh criterion and the photoetching process window, so that the pre-compensation correction gap can be set pertinently, the bridging phenomenon after the corner and diagonal patterns are developed and etched is improved, the developed patterns are not easy to deform, and the precision of the etched patterns is improved.
The embodiment of the present invention further provides an apparatus, which can implement the optical proximity correction method provided by the embodiment of the present invention by loading the above optical proximity correction method in the form of a program.
An optional hardware structure provided by the device of the embodiment of the present invention includes: at least one memory and at least one processor. The memory stores one or more computer instructions.
The processor and memory may communicate over one or more of a communication bus or a communication module interface.
The processor may be a central processing unit CPU, or an application Specific Integrated circuit asic, or one or more Integrated circuits configured to implement embodiments of the present invention.
The memory may comprise high-speed RAM memory, and may also include non-volatile memory (non-volatile memory), such as at least one disk memory.
Wherein the memory stores one or more computer instructions that are executed by the processor to implement the optical proximity correction method provided by embodiments of the present invention.
It should be noted that the above terminal device may further include other devices (not shown) that may not be necessary for the disclosure of the embodiment of the present invention; these other components may not be necessary to understand the disclosure of embodiments of the present invention, which are not individually described herein.
Embodiments of the present invention also provide a storage medium storing one or more computer instructions for implementing the optical proximity correction method provided by the embodiments of the present invention.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (19)
1. An optical proximity correction method for adding a pre-compensated correction gap in a correction direction, comprising:
providing an original layout graph, wherein the original layout graph comprises a first graph and a second graph which are adjacent, and a first end part of the first graph is close to a second end part of the second graph;
extracting a first central point of the first end part and a second central point of the second end part, and establishing a right-angled triangle by taking a connecting line of the first central point and the second central point as a hypotenuse, wherein the right-angled triangle further comprises a first right-angled edge and a second right-angled edge, the first right-angled edge is parallel to the correction direction, and the second right-angled edge is perpendicular to the correction direction;
extracting the minimum length of the hypotenuse and the minimum length of a second right-angle side in the right-angle triangle, and calculating to obtain the minimum length of the first right-angle side;
obtaining the minimum width of the precompensation correction gap according to the minimum length of the first right-angle edge;
and adding a pre-compensation correction gap on the original layout graph according to the minimum width of the pre-compensation correction gap to obtain a corrected layout.
2. The method of claim 1, wherein the first pattern and the second pattern are corner-to-corner patterns, the first pattern and the second pattern are both stripe-shaped rectangular patterns at corners and corners, and the first pattern and the second pattern are parallel at corners and corners.
3. The optical proximity correction method of claim 2, wherein in the step of establishing a right triangle, the first right side is parallel to the first and second patterns at the diagonal of the corner.
4. The optical proximity correction method of claim 1, wherein the first end portion forms a first semicircular pattern after being transferred to the wafer, the second end portion forms a second semicircular pattern after being transferred to the wafer, and in the step of extracting the minimum length of the hypotenuse and the second square, the minimum length of the hypotenuse is obtained by adding the edge arc radii of the first semicircular pattern and the second semicircular pattern, and the minimum pattern pitch between the first semicircular pattern and the second semicircular pattern.
5. The optical proximity correction method of claim 4, wherein the line width of the first pattern is WAThe line width of the second pattern is WBThe radius of the edge arc of the first semicircular figure is based on 0.5 x n2*WAObtaining the edge arc radius of the second semi-circular graph based on 0.5 x n2*WBObtaining wherein n is2For the post-development oblique arc deformation parameter, n2Is in the range of 0.7 to 1.3.
6. The optical proximity correction method of claim 5, wherein a minimum pattern pitch D between the first and second semicircular patternsABAnd obtaining the target object based on a Rayleigh criterion and an exposure process window.
7. The optical proximity correction method of claim 6, wherein the pattern overlap interval DABIs calculated by the formula DAB＝k1*λ/NA+kcdu+kovlWherein k1 is Rayleigh criterion factor, λ is optical wavelength, NA is lens angular aperture value, kcduAs a characteristic dimension uniformity parameter, kovlIs an overlay accuracy performance parameter.
8. The method of claim 7, wherein obtaining the feature size uniformity parameter comprises: and monitoring the stability coefficient, and calculating to obtain the characteristic size uniformity parameter.
9. The optical proximity correction method of claim 7, wherein the method of deriving the overlay accuracy performance parameter comprises: and monitoring the stability coefficient, and calculating to obtain the alignment precision performance parameter.
10. The optical proximity correction method of claim 6, wherein in the step of extracting the minimum lengths of the hypotenuse and the second cathetus, the minimum length of the second cathetus is obtained by adding the edge arc radii of the first semicircular pattern and the second semicircular pattern and the pattern pitch between the first semicircular pattern and the second semicircular pattern.
11. The optical proximity correction method of claim 10, wherein in the step of extracting the minimum length of the hypotenuse and the second cathetus, the minimum length of the second cathetus is a centerline spacing Y of the first pattern and the second patternAB。
12. The method of claim 11, wherein the minimum length of the first straight edge is obtained by adding the radius of the arc top of the first semicircular pattern, the radius of the arc top of the second semicircular pattern, and the distance δ AB, corner between the arc tops of the first semicircular pattern and the second semicircular pattern.
13. The optical proximity correction method of claim 12, wherein the line width of the first pattern is WAThe line width of the second pattern is WBThe radius of the arc top of the first semicircular figure is based on 0.5 x n1*WAObtaining the radius of the arc top of the second semi-circular graph based on 0.5 x n1*WBObtaining wherein n is1For arc-topping after developmentForm factor, n1Is in the range of 0.7 to 1.3.
14. The optical proximity correction method of claim 13, wherein in the step of obtaining the minimum width of the pre-compensation correction gap according to the minimum length of the first straight edge, a distance δ AB between arc tips of the first and second semicircular patterns, corner ═ sqrt ((0.5 ═ n ═ sqrt)2*WA+DAB+0.5*n2*WB)^2-(YAB)^2)-(0.5*n1*WA+0.5*n1*WB) And taking the distance delta AB between the arc tops of the first semicircular pattern and the second semicircular pattern and the corner as the minimum width of the pre-compensation correction gap.
15. The optical proximity correction method according to claim 1, wherein in the step of adding a pre-compensation correction gap on the original layout pattern, the pre-compensation correction gap is added on the side of the first pattern, or the pre-compensation correction gap is added on the side of the second pattern.
16. An optical proximity correction system for performing optical proximity correction on an original layout pattern, wherein a pre-compensation correction gap is added on the original layout pattern, the original layout pattern comprises a first pattern and a second pattern which are adjacent to each other, and a first end of the first pattern is close to a second end of the second pattern, the optical proximity correction system is characterized by comprising:
an information extraction device for extracting a first center point of the first end portion and a second center point of the second end portion;
the calculation device establishes a right-angled triangle by taking a connecting line of the first central point and the second central point as a hypotenuse according to the positions of the first central point and the second central point, and the right-angled triangle further comprises a first right-angled edge and a second right-angled edge, wherein the first right-angled edge is parallel to the correction direction, and the second right-angled edge is perpendicular to the correction direction; the calculation device is further used for calculating the minimum length of the first right-angle side according to the minimum length of the hypotenuse and the minimum length of the second right-angle side in the right-angle triangle, and obtaining the minimum width of the pre-compensation correction gap according to the minimum length of the first right-angle side;
and the correcting device is used for adding the pre-compensation correction gap on the original layout graph according to the minimum width of the pre-compensation correction gap to obtain the corrected layout.
17. A reticle, characterized in that the pattern on the reticle is obtained by any one of the optical proximity correction methods of claims 1-15.
18. An apparatus, comprising:
at least one memory and at least one processor, the memory storing one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the optical proximity correction method of any of claims 1-15.
19. A storage medium storing one or more computer instructions for implementing the optical proximity correction method of any one of claims 1-15.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911380358.0A CN113050365A (en) | 2019-12-27 | 2019-12-27 | Optical proximity correction method and system, mask, equipment and medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911380358.0A CN113050365A (en) | 2019-12-27 | 2019-12-27 | Optical proximity correction method and system, mask, equipment and medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113050365A true CN113050365A (en) | 2021-06-29 |
Family
ID=76506621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911380358.0A Pending CN113050365A (en) | 2019-12-27 | 2019-12-27 | Optical proximity correction method and system, mask, equipment and medium |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113050365A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115453816A (en) * | 2022-11-08 | 2022-12-09 | 华芯程(杭州)科技有限公司 | Optical proximity effect correction method, device and equipment |
Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030213613A1 (en) * | 2002-05-17 | 2003-11-20 | Strozewski Kirk J. | Lithography correction method and device |
| US20080206656A1 (en) * | 2003-06-30 | 2008-08-28 | Asml Masktools B.V. | Scattering bar OPC application method for sub-half wavelength lithography patterning |
| KR20090106890A (en) * | 2008-04-07 | 2009-10-12 | 주식회사 하이닉스반도체 | Method for verification OPC layout |
| CN101937171A (en) * | 2009-07-03 | 2011-01-05 | 中芯国际集成电路制造(上海)有限公司 | Method for building optical proximity correction model, optical proximity correction method and mask |
| CN103091969A (en) * | 2011-10-28 | 2013-05-08 | 上海华虹Nec电子有限公司 | Optical proximity effect correction method for opposite wire ends or nearly opposite wire ends |
| CN103186033A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method and manufacture method of connecting holes |
| WO2013097541A1 (en) * | 2011-12-27 | 2013-07-04 | 无锡华润上华科技有限公司 | Optical proximity correction method |
| CN103309149A (en) * | 2013-06-08 | 2013-09-18 | 上海华力微电子有限公司 | Optical proximity effect correction method |
| CN103543599A (en) * | 2013-11-12 | 2014-01-29 | 上海华力微电子有限公司 | Optical proximity correcting (OPC) method capable of improving line-end shortening effect |
| CN103631084A (en) * | 2012-08-29 | 2014-03-12 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method |
| CN104216235A (en) * | 2014-08-15 | 2014-12-17 | 上海华力微电子有限公司 | Figure pretreatment method and method for measuring figure density |
| CN106372300A (en) * | 2016-08-30 | 2017-02-01 | 上海华力微电子有限公司 | Method for detecting and analyzing manufacturability |
| CN108073047A (en) * | 2016-11-15 | 2018-05-25 | 无锡华润上华科技有限公司 | Method for correcting optical approach effect and system |
| US20190157399A1 (en) * | 2016-07-19 | 2019-05-23 | National Institute Of Advanced Industrial Science And Technology | Semiconductor device and manufacturing method thereof |
| CN110119061A (en) * | 2018-02-06 | 2019-08-13 | 中芯国际集成电路制造(上海)有限公司 | The production method of optical adjacent correction method and mask plate |
| CN110221515A (en) * | 2018-03-02 | 2019-09-10 | 中芯国际集成电路制造(上海)有限公司 | The production method of optical adjacent correction method and mask plate |
-
2019
- 2019-12-27 CN CN201911380358.0A patent/CN113050365A/en active Pending
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030213613A1 (en) * | 2002-05-17 | 2003-11-20 | Strozewski Kirk J. | Lithography correction method and device |
| US20080206656A1 (en) * | 2003-06-30 | 2008-08-28 | Asml Masktools B.V. | Scattering bar OPC application method for sub-half wavelength lithography patterning |
| KR20090106890A (en) * | 2008-04-07 | 2009-10-12 | 주식회사 하이닉스반도체 | Method for verification OPC layout |
| CN101937171A (en) * | 2009-07-03 | 2011-01-05 | 中芯国际集成电路制造(上海)有限公司 | Method for building optical proximity correction model, optical proximity correction method and mask |
| CN103091969A (en) * | 2011-10-28 | 2013-05-08 | 上海华虹Nec电子有限公司 | Optical proximity effect correction method for opposite wire ends or nearly opposite wire ends |
| WO2013097541A1 (en) * | 2011-12-27 | 2013-07-04 | 无锡华润上华科技有限公司 | Optical proximity correction method |
| CN103186033A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method and manufacture method of connecting holes |
| CN103631084A (en) * | 2012-08-29 | 2014-03-12 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method |
| CN103309149A (en) * | 2013-06-08 | 2013-09-18 | 上海华力微电子有限公司 | Optical proximity effect correction method |
| CN103543599A (en) * | 2013-11-12 | 2014-01-29 | 上海华力微电子有限公司 | Optical proximity correcting (OPC) method capable of improving line-end shortening effect |
| CN104216235A (en) * | 2014-08-15 | 2014-12-17 | 上海华力微电子有限公司 | Figure pretreatment method and method for measuring figure density |
| US20190157399A1 (en) * | 2016-07-19 | 2019-05-23 | National Institute Of Advanced Industrial Science And Technology | Semiconductor device and manufacturing method thereof |
| CN106372300A (en) * | 2016-08-30 | 2017-02-01 | 上海华力微电子有限公司 | Method for detecting and analyzing manufacturability |
| CN108073047A (en) * | 2016-11-15 | 2018-05-25 | 无锡华润上华科技有限公司 | Method for correcting optical approach effect and system |
| CN110119061A (en) * | 2018-02-06 | 2019-08-13 | 中芯国际集成电路制造(上海)有限公司 | The production method of optical adjacent correction method and mask plate |
| CN110221515A (en) * | 2018-03-02 | 2019-09-10 | 中芯国际集成电路制造(上海)有限公司 | The production method of optical adjacent correction method and mask plate |
Non-Patent Citations (1)
| Title |
|---|
| RYAN PEARMAN ET AL.: "How curvilinear mask patterning will enhance the EUV process window: a study using rigorous wafer+mask dual simulation", 《PROC. OF SPIE》, 27 June 2019 (2019-06-27), pages 1 - 9, XP060125252, DOI: 10.1117/12.2536632 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115453816A (en) * | 2022-11-08 | 2022-12-09 | 华芯程(杭州)科技有限公司 | Optical proximity effect correction method, device and equipment |
| CN115453816B (en) * | 2022-11-08 | 2023-03-10 | 华芯程(杭州)科技有限公司 | Optical proximity effect correction method, device and equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9910348B2 (en) | Method of simultaneous lithography and etch correction flow | |
| US7278125B2 (en) | Semiconductor integrated circuit pattern verification method, photomask manufacturing method, semiconductor integrated circuit device manufacturing method, and program for implementing semiconductor integrated circuit pattern verification method | |
| US8307310B2 (en) | Pattern generating method, method of manufacturing semiconductor device, computer program product, and pattern-shape-determination-parameter generating method | |
| JP2006318978A (en) | Pattern design method | |
| KR102185558B1 (en) | Method for optical proximity correction | |
| US7600213B2 (en) | Pattern data verification method, pattern data creation method, exposure mask manufacturing method, semiconductor device manufacturing method, and computer program product | |
| US10755016B2 (en) | Hot spot and process window monitoring | |
| TWI547753B (en) | Methods and systems for designing and manufacturing optical lithography masks | |
| CN103149792A (en) | Optical proximity correction method | |
| EP1199651A2 (en) | Method for mask data verification and computer readable record medium recording the verification program | |
| US10061209B2 (en) | Method for verifying a pattern of features printed by a lithography process | |
| CN104166304B (en) | Method for correcting auxiliary pattern | |
| JP5082902B2 (en) | Photomask manufacturing method, photomask manufacturing apparatus, and photomask | |
| JP4643302B2 (en) | Mask pattern creation method, layout creation method, photomask manufacturing method, photomask, and semiconductor device manufacturing method | |
| CN113050365A (en) | Optical proximity correction method and system, mask, equipment and medium | |
| TWI588595B (en) | Method of optical proximity correction | |
| US6998205B2 (en) | Optical proximity correction method | |
| JP5572973B2 (en) | Pattern verification method, verification apparatus, and program | |
| JP2006058413A (en) | Method for forming mask | |
| US8701052B1 (en) | Method of optical proximity correction in combination with double patterning technique | |
| JP2008020734A (en) | Design pattern preparation method for semiconductor device, program, and method of manufacturing the semiconductor device | |
| CN111104773B (en) | Rule-based exposure compensation method | |
| CN104166305B (en) | OPC method for reducing correction iteration times | |
| JP2005316135A (en) | Design correction method, design pattern generating method, and process proximity correction method | |
| KR20080018039A (en) | Opc processing method for preventing off grid |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |