CN113050308A - Electro-optical crystal film for electro-optical modulator, preparation method and electronic component - Google Patents
Electro-optical crystal film for electro-optical modulator, preparation method and electronic component Download PDFInfo
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- WYOHGPUPVHHUGO-UHFFFAOYSA-K potassium;oxygen(2-);titanium(4+);phosphate Chemical compound [O-2].[K+].[Ti+4].[O-]P([O-])([O-])=O WYOHGPUPVHHUGO-UHFFFAOYSA-K 0.000 description 1
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- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12042—Potassium niobate (KNbO3)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12045—Lithium tantalate (LiTaO3)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The application discloses an electro-optic crystal film for an electro-optic modulator, a preparation method and an electronic component, wherein a target groove array is prepared on an SOI substrate laminated with an electrode layer; carrying out ion implantation on the electro-optic crystal substrate and cutting the electro-optic crystal substrate into electro-optic crystal slices; transferring each electro-optic crystal slice into a corresponding groove in the target groove array and bonding the electro-optic crystal slice with a substrate layer in the corresponding groove in the target groove array to obtain a bonding body; and carrying out heat treatment on the bonding body to obtain the electro-optic crystal film. The electro-optic crystal thin film layer reserved in each groove forms an optical waveguide structure, and the grooves formed by the electrodes control optical signals of the optical waveguide, so that an electro-optic modulation function is realized. Meanwhile, the SOI substrate is adopted as the substrate, the characteristic that each layer of the SOI substrate has a smooth surface is utilized, and the oxide layer in the corresponding region is etched by combining a wet etching method, so that the surface of the substrate layer meeting the direct bonding requirement is obtained.
Description
Technical Field
The application belongs to the technical field of semiconductors, and particularly relates to an electro-optic crystal film for an electro-optic modulator, a preparation method and an electronic component.
Background
Lithium niobate or lithium tantalate and other electro-optical crystal materials have the advantages of high Curie temperature, strong spontaneous polarization, high electromechanical coupling coefficient, excellent electro-optical effect and the like, so that the electro-optical crystal materials are widely applied to the fields of nonlinear optics, ferroelectricity, piezoelectricity, electro-optics and the like, and particularly, the electro-optical crystal materials are more and more widely concerned and applied to the fields of thin film bulk acoustic wave devices, filters, electro-optical modulators and the like. If an electro-optic modulator is prepared by utilizing electro-optic crystal materials such as lithium niobate or lithium tantalate, the lithium niobate thin film is required to be further prepared into a required optical waveguide structure, and then light is limited in the lithium niobate thin film layer by utilizing the high refractive index difference between the lithium niobate thin film and silicon dioxide.
At present, the method for preparing the lithium niobate thin film into the required optical waveguide structure mainly comprises the following steps: firstly, preparing a substrate layer, an isolation layer and a lithium niobate thin film layer which are sequentially stacked, and then etching the lithium niobate thin film into a required optical waveguide structure by using an etching method, wherein the commonly used lithium niobate etching method comprises wet etching, dry etching, FIB (focused ion beam) etching and other methods.
However, lithium niobate and lithium tantalate have very stable physical and chemical properties, so that etching treatment on the thin film layer is very difficult, and the thin film layer is damaged to a certain extent, thereby affecting the use performance of applied electronic devices.
Disclosure of Invention
In order to solve the technical problem that in the prior art, the thin film layer is damaged to a certain extent due to the fact that the thin film layer is etched to form the optical waveguide, and therefore the use performance of an applied electronic device is affected, the application provides an electro-optical crystal thin film for an electro-optical modulator, a preparation method and an electronic component.
In a first aspect, the present application provides a method for preparing an electro-optic crystal film for an electro-optic modulator, comprising:
preparing an SOI substrate, wherein the SOI substrate comprises a substrate layer, an oxide layer and a silicon layer which are sequentially laminated from bottom to top;
preparing an electrode layer on the silicon layer;
preparing a mask opposite to the target groove array pattern on the electrode layer;
etching a first depth from the area, which is not covered by the mask film, on the surface of the electrode layer to the direction of the SOI substrate, wherein the first depth is greater than or equal to the sum of the thicknesses of the electrode layer and the silicon layer and is less than the sum of the thicknesses of the electrode layer, the silicon layer and the oxide layer;
continuously etching the region on the surface of the electrode layer, which is not covered by the mask, towards the substrate layer by adopting a wet etching method until the oxide layer with the residual thickness, which is not covered by the mask, is completely etched to form a target groove array;
removing the mask;
carrying out ion implantation in the electro-optic crystal substrate from the process of the electro-optic crystal substrate, and sequentially dividing the electro-optic crystal substrate into an electro-optic crystal thin film layer, a separation layer and a residual layer;
preparing an isolation layer on the process surface of the electro-optic crystal substrate, wherein the thickness of the isolation layer is smaller than the sum of the thicknesses of the oxidation layer, the silicon layer and the electrode layer;
cutting the electro-optic crystal substrate with the isolating layer to obtain electro-optic crystal slices matched with the sizes of all grooves in the target groove array;
transferring each electro-optic crystal slice into a corresponding groove in the target groove array and bonding the electro-optic crystal slice with a substrate layer in the corresponding groove in the target groove array to obtain a bonding body;
and carrying out heat treatment on the bonding body, and separating the residual substance layer of each electro-optic crystal slice from the electro-optic crystal thin film layer to obtain the electro-optic crystal thin film, wherein the sum of the thicknesses of the isolation layer and the electro-optic crystal thin film layer in each groove in the target groove array is greater than the sum of the thicknesses of the oxidation layer and the silicon layer.
Optionally, the electrode layer is a single-layer metal film or a composite metal film.
Optionally, a gap is left at the periphery of the electro-optic crystal slice in each groove.
Optionally, the size of each groove in the target groove array is the same or different.
In a second aspect, the present application further provides an electro-optical thin crystal film for an electro-optical modulator, including an SOI substrate having a top surface with a basic groove array, the SOI substrate including a substrate layer, an oxide layer, and a silicon layer stacked in sequence from a bottom surface to the top surface, wherein a depth of each groove in the basic groove array is equal to a sum of thicknesses of the oxide layer and the silicon layer; the silicon layer comprises a first area corresponding to each groove in the basic groove array and a second area without grooves, an electrode layer is laminated on the second area, and the area surrounded by the electrode layer and the basic groove array form a groove array; the bottom of each groove in the groove array is sequentially laminated with an isolating layer and an electro-optic crystal thin film layer, wherein the size of the isolating layer in each groove is the same as that of the electro-optic crystal thin film layer, the thickness of the isolating layer in each groove in the groove array is smaller than the sum of the thicknesses of the oxide layer, the silicon layer and the electrode layer, and the sum of the thicknesses of the isolating layer in each groove in the groove array and the electro-optic crystal thin film layer is larger than the sum of the thicknesses of the oxide layer and the silicon layer.
Optionally, a gap is left between the isolation layer in each groove in the groove array and the periphery of the electro-optic crystal thin film layer.
Optionally, the length of each groove in the groove array is 1 μm to 100mm, the width of each groove in the groove array is 1 μm to 100mm, and the distance between two adjacent grooves is 1 μm to 100 mm.
In a third aspect, the present application further provides an electronic component comprising the electro-optic crystal film for an electro-optic modulator according to any of the second aspects.
The application provides an electro-optic crystal film for an electro-optic modulator, a preparation method and an electronic component, the electro-optic crystal material with very stable physical and chemical properties such as lithium niobate and lithium tantalate is not required to be etched to form an optical waveguide, instead, an electro-optic crystal substrate is cut into a plurality of small electro-optic crystal slices in advance, and then each cut electro-optic crystal slice is transferred into a corresponding groove in a groove array prepared in advance, wherein the electro-optic crystal film layer reserved in each groove forms an optical waveguide structure, and the grooves formed by electrodes control optical signals of the optical waveguide, so that the electro-optic modulation function is realized, and the influence of etching on the damage of the electro-optic crystal film layer is avoided. In addition, the SOI finished product is used as the substrate in the application, the SOI substrate can be directly etched into a structure with a groove array, and the oxide layer in the corresponding area is etched by combining a wet etching method by utilizing the characteristic that each layer of the SOI substrate has a smooth surface, so that the surface of the substrate layer meeting the direct bonding requirement is obtained.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is a flow chart of a method for manufacturing an electro-optic crystal film for an electro-optic modulator according to an embodiment of the present disclosure;
FIG. 2 is a schematic structural diagram of a groove array in a method for manufacturing an electro-optic crystal thin film for an electro-optic modulator according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of a structure after an electro-optic crystal substrate is cut according to an embodiment of the present application;
FIG. 4 is a schematic structural diagram of transferring an electro-optic crystal slice to a target groove array according to an embodiment of the present application;
fig. 5 is a schematic structural diagram of an electro-optic crystal film for an electro-optic modulator according to an embodiment of the present disclosure.
Description of the reference numerals
110-substrate layer, 120-oxide layer, 130-silicon layer, 200-electrode layer, 300-mask, 400-target groove array, 500-electro-optical crystal substrate, 510-electro-optical crystal thin film layer, 520-separation layer, 530-residual layer, 500A-electro-optical crystal slice and 600-isolation layer.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 1, the present application provides a method for preparing an electro-optic crystal film for an electro-optic modulator, comprising the steps of:
SOI (Silicon-On-Insulator, Silicon On an insulating substrate) incorporates a buried oxide layer between the top Silicon layer and the substrate layer. By forming a semiconductor thin film on an insulator, the SOI material has advantages over bulk silicon: the dielectric isolation of components in the integrated circuit can be realized, and the parasitic latch-up effect in a bulk silicon CMOS circuit is thoroughly eliminated; the integrated circuit made of the material also has the advantages of small parasitic capacitance, high integration density, high speed, simple process, small short channel effect, particular application to low-voltage and low-power consumption circuits and the like.
And 2, preparing an electrode layer 200 on the silicon layer 130.
The electrode layer 200 should be made of a metal material with good conductivity, such as: copper (Cu), gold (Au), titanium (Ti), platinum (Pt), molybdenum (Mo), ruthenium (Ru), chromium (Cr), aluminum (Al), tin (Sn), or the like, which is not limited in the present application.
In addition, the electrode layer 200 may adopt a single-layer metal film or a composite metal film, and if the electrode layer 200 adopts a single-layer metal film, the metal material with good conductivity may be independently selected as the electrode layer; if the electrode layer 200 is a composite metal thin film, an Ar/Cr composite metal thin film, a Pt/Cr composite metal thin film, a Mo/Cr composite metal thin film, an Al/Cr composite metal thin film, or the like may be used, which is not limited in the present application. In a specific example, the electrode layer 200 is a composite metal film composed of an Au layer and a Cr layer, that is, a composite metal film composed of metal gold and chromium is used, wherein Cr is used as an adhesion layer, which can ensure that Au and the support substrate have good bonding force, and the conductivity of Au is better than that of Cr, so that the electrical loss is lower, and the driving voltage of the device can be effectively reduced.
Further, the thickness of the Au layer is greater than that of the Cr layer. Since the Au layer mainly functions as an electrode and the Cr layer mainly functions as an adhesive, the thickness of the Au layer is larger than that of the Cr layer.
The method for preparing the electrode layer 200 is not limited in the present application, and for example: and depositing a Cr layer on the silicon layer 130 of the SOI substrate by adopting a magnetron sputtering method, wherein the used target material is a Cr target material, the sputtering power is 10W-1000W, the sputtering pressure is 1Pa-1000Pa, the argon flow is 10sccm-1000sccm, and the thickness of the Cr layer prepared by sputtering is 10nm-1000 nm.
And 3, preparing a mask 300 with a pattern opposite to that of the target groove array 400 on the electrode layer 200.
For the convenience of understanding, it is to be noted that the idea of the method for preparing the electro-optical crystal thin film for the electro-optical modulator provided by the present application is mainly as follows: on one hand, the electro-optic crystal substrate is cut into a plurality of small-sized electro-optic crystal slices; on the other hand, a groove array for bonding an electro-optical crystal slice is prepared on an SOI substrate on which an electrode layer is laminated. The steps 3-5 are mainly used for preparing a groove array used for bonding the electro-optic crystal slice, and the steps 7-9 are mainly used for preparing the electro-optic crystal slice.
From the above analysis, the target groove array 400 is a structure for inserting the corresponding electro-optic crystal slice, and the pattern of the target groove array 400 is not limited in the present application, and can be designed according to actual requirements.
The embodiment of the present application does not limit the method for preparing the mask 300 on the electrode layer 200, for example: a mask 300 is prepared on the electrode layer 200 using a photolithography method. In the embodiment of the present application, the material of the mask 300 is not limited, and may be photoresist, chromium, silicon dioxide, silicon carbide, silicon nitride, or the like.
And 4, etching a first depth from the area, not covered by the mask 300, on the surface of the electrode layer 200 to the direction of the SOI substrate, wherein the first depth is greater than or equal to the sum of the thicknesses of the electrode layer 200 and the silicon layer 130 and is less than the sum of the thicknesses of the electrode layer 200, the silicon layer 130 and the oxide layer 120.
And etching the SOI substrate from the exposed electrode layer until the exposed electrode layer and the silicon layer are completely etched, or continuously etching the oxide layer with a certain thickness after the exposed electrode layer and the silicon layer are completely etched, but not completely etching the oxide layer. That is, after the etching process of step 4, at least a certain thickness of the oxide layer remains in the area not covered by the mask 300.
And 5, continuously etching the surface of the electrode layer 200 from the area not covered by the mask 300 to the substrate layer by adopting a wet etching method until the oxide layer with the residual thickness corresponding to the area not covered by the mask is completely etched away to form the target groove array 400.
It should be noted that, since each layer in the SOI substrate has a smooth surface, at least a part of the oxide layer is remained in step 4 and is not etched, and then, in step 5, the remaining oxide layer in the exposed region is removed by using a wet etching method, so as to ensure that the original smooth surface of the substrate layer can be maintained after the oxide layer is removed, thereby satisfying the bonding requirement.
And removing the residual silicon oxide layer in the exposed area by adopting a wet etching method, namely removing the residual silicon oxide layer in the exposed area by adopting an etching solution, wherein the etching solution does not react with the substrate layer and the electrode layer. For example: and if the oxide layer is a silicon oxide material and the substrate layer is a silicon material, the residual silicon oxide layer in the exposed area can be removed by adopting HF until the underlying substrate layer is leaked out.
As shown in fig. 2, the target groove array 400 refers to a structure formed by arranging the square grooves in fig. 2 in an array, wherein the area where no groove is formed is the area covered by the mask 300. It should be noted that fig. 2 is only an example of the target groove array 400, and the target groove array 400 in the present application may have other configurations, for example: the cross section of each groove in the target groove array 400 may be regular or irregular shapes such as pentagon, hexagon, etc., wherein the size of each groove may be the same, different or partially the same, which is not limited herein. In a specific example, each groove in the target groove array 400 has a length of 1 μm to 100mm, a width of 1 μm to 100mm, a first depth of 50nm to 50 μm, and a pitch between two adjacent grooves of 1 μm to 100mm, wherein the size of each groove may be the same or different. For example: the dimensions of each groove in the target groove array are: the length is 10mm, the width is 5mm, and the first depth is 220 nm.
And 6, removing the mask 300.
After the target groove array is obtained, the mask 300 may be removed, and the method for removing the mask is not limited in this application. For example: if the mask is made of photoresist, the photoresist can be removed by using an acetone solution.
And 7, carrying out ion implantation from the process surface of the electro-optical crystal substrate 500 into the electro-optical crystal substrate, and sequentially dividing the electro-optical crystal substrate 500 into an electro-optical crystal thin film layer 510, a separation layer 520 and a residual layer 530.
The electro-optic crystal substrate 500 in the embodiment of the present application is a base material having a certain thickness and used for preparing an electro-optic crystal thin film layer, and the electro-optic crystal substrate 500 may be made of lithium niobate, lithium tantalate, gallium arsenide, silicon, ceramic, lithium tetraborate, gallium arsenide, potassium titanyl phosphate, rubidium titanyl phosphate crystal, quartz, or other materials, which is not limited in the present application.
In one specific example, the electro-optic crystal substrate 500 is: a lithium niobate wafer having a size of 4 inches, a thickness of 0.5mm, and a smooth surface.
The ion implantation method in the embodiment of the present application is not particularly limited, and any ion implantation method in the prior art may be used, and the implanted ions may be ions that can generate gas by heat treatment, for example: hydrogen ions or helium ions. When implanting hydrogen ions, the implantation dose can be 3 × 1016ions/cm2～8×1016ions/cm2The implantation energy can be 120 KeV-400 KeV; when implanting helium ions, the implantation dose can be 1 × 1016ions/cm2～1×1017ions/cm2The implantation energy may be 50KeV to 1000 KeV. For example, when implanting hydrogen ions, the implantation dose may be 4 × 1016ions/cm2The implantation energy may be 180 KeV; when implanting helium ions, the implantation dose is 4 × 1016ions/cm2The implantation energy was 200 KeV.
In the embodiment of the application, the thickness of the electro-optic crystal thin film layer can be adjusted by adjusting the ion implantation depth, and specifically, the larger the ion implantation depth is, the larger the thickness of the prepared electro-optic crystal thin film layer is; conversely, the smaller the depth of ion implantation, the smaller the thickness of the produced electro-optic crystal thin film layer.
And 8, preparing an isolation layer 600 on the process surface of the electro-optic crystal substrate 500, wherein the thickness of the isolation layer 600 is smaller than the sum of the thicknesses of the oxidation layer, the silicon layer and the electrode layer.
The method prepares the isolating layer 600 on the process surface of the electro-optic crystal substrate after ion implantation, and the method does not limit the material of the isolating layer, such as: the isolating layer can be made of materials such as silicon oxide, silicon nitride, aluminum oxide, quartz, diamond, sapphire or silicon nitride.
The application is also not limited to methods for preparing the barrier layer, such as: the method comprises the steps of depositing silicon oxide on a lithium niobate wafer process surface (namely an ion implantation surface) by adopting a magnetron sputtering method to form an isolation layer, wherein the used target material is a Si target material, the sputtering power is 10W-1000W, the sputtering pressure is 1Pa-1000Pa, the flow rates of oxygen and argon are both 10sccm-1000sccm, the thickness of the isolation layer prepared by sputtering is 100nm-5000nm, and then grinding and polishing are carried out to 1000nm, so that the surface roughness of the isolation layer is less than 1 nm.
And 9, cutting the electro-optic crystal substrate with the isolating layer to obtain an electro-optic crystal slice matched with the size of each groove in the target groove array.
It should be noted that the cutting operation and the etching operation for the electro-optical crystal substrate are two completely different operations. Compare in prior art and handle the electro-optic crystal thin layer etching of formation, this application is through before electro-optic crystal substrate and supporting substrate bonding, cuts the electro-optic crystal substrate after the ion implantation earlier, on the one hand, can reduce the cutting degree of difficulty, improve cutting efficiency, on the other hand, carries out the mode of cutting to the electro-optic crystal substrate after the ion implantation, can obtain the electro-optic crystal section that hardly has any damage to guarantee the quality of the electro-optic crystal thin layer that finally obtains.
As shown in fig. 3, the electro-optical crystal slices are cut according to the preset size of the electro-optical crystal slices, the size of the electro-optical crystal slices 500A obtained by cutting matches with the size of each groove in the target groove array 400, that is, each electro-optical crystal slice 500A obtained by cutting can be respectively transferred to the corresponding groove in the target groove array 400, and then each electro-optical crystal slice is bonded on the part of the isolation layer corresponding to each groove bottom.
In the step 8, an isolation layer is prepared on the electro-optical crystal substrate in advance, so that each electro-optical crystal slice obtained after cutting comprises an isolation layer with the size corresponding to the size of the electro-optical crystal slice, and the electro-optical crystal slice can be directly bonded with the substrate layer in the corresponding groove through the isolation layer in the step 10 to form a bonding body.
The size of the electro-optical crystal slice can be completely the same as the size of the corresponding groove, and can also be slightly smaller than the size of the corresponding groove, which is not limited in the application. For example: the lithium niobate wafer after ion implantation with the size of 4 inches and the thickness of 0.5mm is cut into a block structure with the length of 1 mu m-100mm and the width of 1 mu m-100 mm.
In one specific example, the size of the electro-optic crystal slice satisfies: after the electro-optical crystal slices are transferred into the corresponding grooves in the target groove array, gaps are reserved on the peripheries of the electro-optical crystal slices in the grooves, for example: one groove in the target groove array 400 has a length of 10mm, a width of 5mm, a first depth of 220nm, and an electro-optic crystal slice corresponding to the groove has a length of 8mm and a width of 3 mm.
And 10, transferring each electro-optic crystal slice into a corresponding groove in the target groove array and bonding the electro-optic crystal slice with a substrate layer in the corresponding groove in the target groove array to obtain a bonding body.
As shown in fig. 4, the electro-optical crystal slices prepared in the above steps are transferred into the corresponding grooves, specifically, the electro-optical crystal slices can be transferred manually or by using a preset device. The isolation layer 120 of the electro-optical crystal slices transferred to the corresponding groove is in contact with the substrate layer at the bottom of the groove, and then each electro-optical crystal slice is bonded with the corresponding substrate layer through the isolation layer by a bonding method to form a bonded body.
Because the exposed substrate layer part in the SOI substrate is obtained by removing the oxide layer on the top layer by adopting a wet etching method, the exposed substrate layer surface in the SOI substrate can meet the requirement of bonding with the isolation layer without other treatment.
Further, the surface of the isolation layer in the electro-optic crystal slice can be coated with the polymer BCB in a spin mode, and then the electro-optic crystal slice coated with the polymer BCB in the spin mode is bonded with the substrate layer. Wherein the thickness of the BCB can be 100nm-10000nm, and the BCB is benzocyclobutene. BCB is used as an adhesive to participate in bonding, has low requirements on the cleanliness and the surface morphology of a bonded surface, can be used for carrying out better planarization treatment on a patterned substrate, and has good compatibility with a bonded sample. Moreover, the bonding strength is not lost in other bonding modes, the cost is low, and wafer-level bonding can be realized.
In one implementation manner, the electro-optical crystal slices 500A formed by cutting are arranged and adhered to a supporting sheet, the adhering manner may be a temporary bonding manner such as photoresist, and the arrangement pattern of the electro-optical crystal slices 500A is consistent with the pattern of the target groove array 400; and then, bonding the support sheet with the arrangement of the electro-optic crystal slices 500A after cleaning with the target groove array by adopting a plasma bonding method to form a bonding body.
The bonding method is not particularly limited in the present application, and any bonding method in the prior art, for example, surface activation bonding, may be used to obtain a bonded body. The surface activation method is not limited in the present application, and for example, plasma activation or chemical solution activation may be used.
And 11, carrying out heat treatment on the bonding body, and separating the residual layer of each electro-optic crystal slice from the electro-optic crystal thin film layer to obtain the electro-optic crystal thin film, wherein the sum of the thicknesses of the isolation layer and the electro-optic crystal thin film layer in each groove in the target groove array is greater than the sum of the thicknesses of the oxidation layer and the silicon layer.
In a specific example, the bonded body is subjected to a heat treatment, the temperature of the heat treatment can be 100 ℃ to 600 ℃, bubbles are formed in the separation layer during the heat treatment, for example, H ions form hydrogen, He ions form helium, and the like, the bubbles in the separation layer are connected into one piece as the heat treatment progresses, finally the separation layer is cracked, the residual layer is separated from the electro-optical crystal thin film layer, so that the residual layer is stripped from the bonded body, and a corresponding electro-optical crystal thin film layer is formed on the surface of the separation layer.
And after the residual layers of the electro-optical crystal slices are stripped from the isolation layer, only the electro-optical crystal thin film layer is remained in the corresponding groove and is bonded on the isolation layer, wherein the small-size optical crystal thin film layer remained in each groove on the substrate layer forms an optical waveguide, and the grooves, namely the electrode layers, around the optical crystal thin film layer are formed. Therefore, the electro-optical modulation function can be realized by controlling the voltage of the electrode positioned around the optical crystal thin film layer and adjusting the optical signal output by the optical crystal thin film layer. For example: when the voltage is not applied to the electrodes on the two sides of the electro-optical crystal thin film layers in the two adjacent grooves, the optical signal output of the electro-optical crystal thin film layers in the two adjacent grooves is coherent enhancement, when the voltage is applied to the electrodes on the two sides of the electro-optical crystal thin film layer in one groove, the refractive index of the optical crystal thin film in the groove changes along with the voltage, the optical signal phase of the optical crystal thin film with the voltage is changed, and the optical signal output of the electro-optical crystal thin film layers in the two adjacent grooves is coherent cancellation. Meanwhile, the isolation layer between the electro-optical crystal thin film layer and the substrate layer can prevent optical signals transmitted in the electro-optical crystal thin film layer from leaking to the substrate layer.
In a specific example, a gap is reserved on the periphery of the electro-optical crystal slice in each groove, and a gap is reserved on the inner periphery of the groove of the electro-optical crystal thin film layer correspondingly formed, so that the electro-optical crystal thin film layer is coated by the isolation layer and air in the gap to form a large refractive index difference, and the strong-guiding high-refractive-index contrast structure provides material support for realizing photoelectric integration in a small volume range.
It should be noted that, in practice, the electro-optical crystal film for the electro-optical modulator formed as described above may be cut according to practical application scenarios, and the cut structure may include one or more grooves in a groove array, and an electrode layer is present at the periphery of the groove to form optical waveguides with different configurations. For example, one or more Y-shaped optical waveguides can be cut from the resulting electro-optic crystal film for use in an electro-optic modulator.
In summary, according to the method for preparing the electro-optic crystal thin film for the electro-optic modulator provided by the application, the electro-optic crystal material with very stable physical and chemical properties such as lithium niobate and lithium tantalate does not need to be etched to form the optical waveguide, the electro-optic crystal substrate is cut into a plurality of small electro-optic crystal slices in advance, then each cut electro-optic crystal slice is transferred into the corresponding groove in the groove array prepared in advance, wherein the electro-optic crystal thin film layer reserved in each groove forms the optical waveguide structure, the grooves formed by the electrodes control the optical signal of the optical waveguide, so that the electro-optic modulation function is realized, and the influence of etching on the damage of the prepared electro-optic crystal thin film layer is solved. In addition, the SOI finished product is used as the substrate in the application, the SOI substrate can be directly etched into a structure with a groove array, and the oxide layer in the corresponding area is etched by combining a wet etching method by utilizing the characteristic that each layer of the SOI substrate has a smooth surface, so that the surface of the substrate layer meeting the direct bonding requirement is obtained.
The present application further provides an electro-optical crystal thin film for an electro-optical modulator, which can be prepared by the method for preparing an electro-optical crystal thin film for an electro-optical modulator provided in the above embodiment, as shown in fig. 5, the electro-optical crystal thin film for an electro-optical modulator includes an SOI substrate having a top surface with a basic groove array, the SOI substrate includes a substrate layer 110, an oxide layer 120, and a silicon layer 130 stacked in sequence from a bottom surface to the top surface, wherein the depth of each groove in the basic groove array is equal to the sum of the thicknesses of the oxide layer 120 and the silicon layer 130; the silicon layer 130 comprises a first region corresponding to each groove in the basic groove array and a second region without grooves, an electrode layer 200 is laminated on the second region, wherein the region surrounded by the electrode layer 200 and the basic groove array form a groove array; an isolation layer 600 and an electro-optic crystal thin film layer 510 are sequentially stacked on the bottom of each groove in the groove array, wherein the size of the isolation layer 600 and the electro-optic crystal thin film layer 510 in each groove is the same (namely, the length and the width of the isolation layer 600 are the same as those of the electro-optic crystal thin film layer 510 stacked thereon), the thickness of the isolation layer 600 in each groove in the groove array is smaller than the sum of the thicknesses of the oxide layer 120, the silicon layer 130 and the electrode layer 200, and the sum of the thicknesses of the isolation layer 600 and the electro-optic crystal thin film layer 510 in each groove in the groove array is larger than the sum of the thicknesses of the oxide layer 120 and the silicon layer 130.
The electro-optical crystal thin film for the electro-optical modulator is characterized in that the electro-optical crystal thin film layer 510 is stacked in the corresponding grooves in a small-size slicing mode to form optical waveguides, wherein the peripheries of the grooves are formed by the electrode layers, so that the optical signals output by the electro-optical crystal thin film can be adjusted by controlling the voltage of the electrodes positioned around the electro-optical crystal thin film layer, and the electro-optical modulation function is realized. For example: when the voltage is not applied to the electrodes on the two sides of the electro-optical crystal thin film layers in the two adjacent grooves, the optical signal output of the electro-optical crystal thin film layers in the two adjacent grooves is coherent enhancement, when the voltage is applied to the electrodes on the two sides of the electro-optical crystal thin film layer in one groove, the refractive index of the optical crystal thin film in the groove changes along with the voltage, the optical signal phase of the optical crystal thin film with the voltage is changed, and the optical signal output of the electro-optical crystal thin film layers in the two adjacent grooves is coherent cancellation. The isolation layer at the bottom of the electro-optical crystal thin film layer and the electro-optical crystal thin film layer form a refractive index difference, so that optical signals are limited to be transmitted in the electro-optical crystal thin film layer.
Furthermore, gaps can be reserved on the periphery of the electro-optical crystal thin film layer in each groove, gaps are reserved on the inner periphery of the formed electro-optical crystal thin film layer in the groove, and therefore the electro-optical crystal thin film layer is coated by the isolation layer and air in the gaps, large refractive index difference is formed, and the strong-guiding high-refractive-index contrast structure provides material support for realizing photoelectric integration in a small volume range.
The size of the grooves in the groove array is not limited in the present application, for example, the length of the grooves in the groove array may be 1 μm-100mm, the width of the grooves in the groove array may be 1 μm-100mm, and the distance between two adjacent grooves may be 1 μm-100 mm.
The application also provides an electronic component which comprises the electro-optical crystal film for the electro-optical modulator.
It should be noted that, in practice, the electro-optic crystal film for the electro-optic modulator formed as described above may be cut according to the type of the electro-optic modulator required, and the cut structure may include one or more grooves in a groove array, and an electrode layer is present at the periphery of the groove to form the corresponding type of electro-optic modulator. For example, an electro-optic modulator having one or more Y-shaped optical waveguides can be fabricated from the resulting electro-optic crystal film for an electro-optic modulator.
The same and similar parts among the various embodiments in the present specification can be referred to each other, and especially, the corresponding embodiments of the electro-optic crystal film for the electro-optic modulator can be referred to the preparation method part of the electro-optic crystal film for the electro-optic modulator.
In some of the flows described in the present specification and claims and in the above figures, a number of operations are included that occur in a particular order, but it should be clearly understood that these operations may be performed out of order or in parallel as they occur herein, with the order of the operations being numbered 100, 200, etc. merely to distinguish between the various operations, and the order of execution does not in itself dictate any order of execution. Additionally, the flows may include more or fewer operations, and the operations may be performed sequentially or in parallel.
Further, the present application may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion.
The present application has been described in detail with reference to specific embodiments and illustrative examples, but the description is not intended to limit the application. Those skilled in the art will appreciate that various equivalent substitutions, modifications or improvements may be made to the presently disclosed embodiments and implementations thereof without departing from the spirit and scope of the present disclosure, and these fall within the scope of the present disclosure. The protection scope of this application is subject to the appended claims.
Claims (8)
1. A method for preparing an electro-optic crystal film for an electro-optic modulator, comprising:
preparing an SOI substrate, wherein the SOI substrate comprises a substrate layer, an oxide layer and a silicon layer which are sequentially laminated from bottom to top;
preparing an electrode layer on the silicon layer;
preparing a mask opposite to the target groove array pattern on the electrode layer;
etching a first depth from the area, which is not covered by the mask film, on the surface of the electrode layer to the direction of the SOI substrate, wherein the first depth is greater than or equal to the sum of the thicknesses of the electrode layer and the silicon layer and is less than the sum of the thicknesses of the electrode layer, the silicon layer and the oxide layer;
continuously etching the region on the surface of the electrode layer, which is not covered by the mask, towards the substrate layer by adopting a wet etching method until the oxide layer with the residual thickness, which is not covered by the mask, is completely etched to form a target groove array;
removing the mask;
carrying out ion implantation in the electro-optic crystal substrate from the process of the electro-optic crystal substrate, and sequentially dividing the electro-optic crystal substrate into an electro-optic crystal thin film layer, a separation layer and a residual layer;
preparing an isolation layer on the process surface of the electro-optic crystal substrate, wherein the thickness of the isolation layer is smaller than the sum of the thicknesses of the oxidation layer, the silicon layer and the electrode layer;
cutting the electro-optic crystal substrate with the isolating layer to obtain electro-optic crystal slices matched with the sizes of all grooves in the target groove array;
transferring each electro-optic crystal slice into a corresponding groove in the target groove array and bonding the electro-optic crystal slice with a substrate layer in the corresponding groove in the target groove array to obtain a bonding body;
and carrying out heat treatment on the bonding body, and separating the residual substance layer of each electro-optic crystal slice from the electro-optic crystal thin film layer to obtain the electro-optic crystal thin film, wherein the sum of the thicknesses of the isolation layer and the electro-optic crystal thin film layer in each groove in the target groove array is greater than the sum of the thicknesses of the oxidation layer and the silicon layer.
2. The production method according to claim 1, wherein the electrode layer is a single-layer metal thin film or a composite metal thin film.
3. The method of claim 1, wherein a void is left around the perimeter of the slice of the electro-optic crystal in each recess.
4. The method of claim 1, wherein the dimensions of each groove in the target groove array are the same or different.
5. An electro-optic crystal film for an electro-optic modulator is characterized by comprising an SOI substrate with a basic groove array on the top surface, wherein the SOI substrate comprises a substrate layer, an oxidation layer and a silicon layer which are sequentially stacked from the lower surface to the top surface, and the depth of each groove in the basic groove array is equal to the sum of the thicknesses of the oxidation layer and the silicon layer; the silicon layer comprises a first area corresponding to each groove in the basic groove array and a second area without grooves, an electrode layer is laminated on the second area, and the area surrounded by the electrode layer and the basic groove array form a groove array;
the bottom of each groove in the groove array is sequentially laminated with an isolating layer and an electro-optic crystal thin film layer, wherein the size of the isolating layer in each groove is the same as that of the electro-optic crystal thin film layer, the thickness of the isolating layer in each groove in the groove array is smaller than the sum of the thicknesses of the oxide layer, the silicon layer and the electrode layer, and the sum of the thicknesses of the isolating layer in each groove in the groove array and the electro-optic crystal thin film layer is larger than the sum of the thicknesses of the oxide layer and the silicon layer.
6. An electro-optic crystal film for an electro-optic modulator of claim 5 wherein the spacer layer and the electro-optic crystal film layer within each groove in the array of grooves have voids at their peripheries.
7. An electro-optic crystal film for an electro-optic modulator according to claim 5 wherein the grooves in the groove array have a length of 1 μm to 100mm, the grooves in the groove array have a width of 1 μm to 100mm, and the pitch between two adjacent grooves is 1 μm to 100 mm.
8. An electronic component comprising the electro-optical crystal film for an electro-optical modulator according to any one of claims 5 to 7.
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