CN113042915A - SiC晶锭的加工方法和激光加工装置 - Google Patents

SiC晶锭的加工方法和激光加工装置 Download PDF

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CN113042915A
CN113042915A CN202011421013.8A CN202011421013A CN113042915A CN 113042915 A CN113042915 A CN 113042915A CN 202011421013 A CN202011421013 A CN 202011421013A CN 113042915 A CN113042915 A CN 113042915A
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sic ingot
axis direction
resistance value
sic
laser beam
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平田和也
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Disco Corp
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Abstract

本发明提供SiC晶锭的加工方法和激光加工装置，该SiC晶锭的加工方法能够在SiC晶锭中形成适当的剥离带。SiC晶锭的加工方法包括下述工序：电阻值测量工序，测量SiC晶锭的端面的电阻值；激光光线输出调整工序，与利用电阻值测量工序测量的电阻值相对应地调整激光光线的输出；以及剥离带形成工序，将具有对于SiC晶锭来说为透过性的波长的激光光线的聚光点定位在与要生成的晶片的厚度对应的深度，一边对SiC晶锭照射激光光线一边使SiC晶锭和聚光点沿X轴方向相对地进行加工进给，在SiC晶锭的内部形成带状的剥离带。

Description

SiC晶锭的加工方法和激光加工装置
技术领域
本发明涉及SiC晶锭的加工方法和激光加工装置。
背景技术
IC、LSI、LED等器件是在以Si(硅)、Al2O3(蓝宝石)等作为原材料的晶片的表面上层叠功能层并通过交叉的多条分割预定线对该功能层进行划分而形成的。另外，功率器件、LED等是在以SiC(碳化硅)为原材料的晶片的表面上层叠功能层并通过交叉的多条分割预定线对该功能层进行划分而形成的。形成了器件的晶片通过切削装置、激光加工装置对分割预定线实施加工而分割成各个器件芯片，分割出的各器件芯片被用于移动电话、个人电脑等电气设备中。
形成有器件的晶片通常是利用线切割机将圆柱形状的晶锭薄薄地切断而生成的。通过对切断的晶片的表面和背面进行研磨而精加工成镜面(例如参见专利文献1)。但是，在将晶锭利用线切割机切断并对切断的晶片的表面和背面进行研磨时，晶锭的大部分(70～80％)被舍弃，存在不经济的问题。特别是SiC晶锭的硬度高，难以利用线切割机切断，需要花费相当长的时间，因此生产率差，并且晶锭的单价高，在有效地生成晶片方面存在课题。
因此，本申请人提出了下述技术：将具有对于SiC来说为透过性的波长的激光光线的聚光点定位在SiC晶锭的内部，对SiC晶锭照射激光光线，在切断预定面上形成剥离带，并沿着形成了剥离带的切断预定面从SiC晶锭剥离晶片(例如参见专利文献2)。
现有技术文献
专利文献
专利文献1：日本特开2000-94221号公报
专利文献2：日本特开2016-111143号公报
发明内容
发明所要解决的课题
在SiC晶锭的成长过程中控制氮原子(N)的掺杂量，使SiC晶锭的电阻值落在容许值的范围内。但是，即使为容许值的范围内，SiC晶锭的电阻值也存在偏差。并且，在对SiC晶锭照射激光光线而形成剥离带时，存在会由于SiC晶锭的电阻值的偏差而无法形成适当的剥离带的问题。
因此，本发明的目的在于提供能够在SiC晶锭中形成适当的剥离带的SiC晶锭的加工方法和激光加工装置。
用于解决课题的手段
根据本发明的一个方式，提供一种SiC晶锭的加工方法，其是具有端面的SiC晶锭的加工方法，其具备下述工序：电阻值测量工序，测量SiC晶锭的该端面的电阻值；激光光线输出调整工序，与利用该电阻值测量工序测量的电阻值相对应地调整激光光线的输出；剥离带形成工序，将与c面相对于SiC晶锭的该端面倾斜而由SiC晶锭的该端面和该c面形成偏离角的方向垂直的方向作为X轴方向，将与该X轴方向垂直的方向作为Y轴方向，将具有对于SiC晶锭来说为透过性的波长的激光光线的聚光点定位在与要生成的晶片的厚度对应的深度，一边对SiC晶锭照射激光光线一边使SiC晶锭和该聚光点沿该X轴方向相对地进行加工进给，形成裂纹从SiC分离成Si和C的部分起沿着该c面延伸的带状的剥离带；以及分度进给工序，使SiC晶锭和该聚光点沿该Y轴方向相对地进行分度进给，使剥离带沿该Y轴方向并排设置。
优选实施平坦面形成工序，在该剥离带形成工序之前对SiC晶锭的端面进行磨削而使该端面形成为平坦面。
根据本发明的另一方式，提供一种激光加工装置，其是在SiC晶锭中形成剥离带的激光加工装置，该激光加工装置具备：保持工作台，其保持SiC晶锭；激光光线照射单元，其包含聚光器，将与c面相对于该保持工作台所保持的SiC晶锭的端面倾斜而由SiC晶锭的该端面和该c面形成偏离角的方向垂直的方向作为X轴方向，将与该X轴方向垂直的方向作为Y轴方向，该聚光器将具有对于SiC晶锭来说为透过性的波长的激光光线的聚光点定位在与要生成的晶片的厚度对应的深度而对SiC晶锭照射激光光线，形成裂纹从SiC分离成Si和C的部分起沿着该c面延伸的带状的剥离带；X轴进给机构，其使该保持工作台和该聚光器沿该X轴方向相对地进行加工进给；Y轴进给机构，其使该保持工作台和该聚光器沿该Y轴方向相对地进行分度进给；以及电阻值测量器，其对SiC晶锭的该端面的电阻值进行测量。
优选包含控制单元，该控制单元与该电阻值测量器所测量的电阻值相对应地调整激光光线的输出。
发明效果
根据本发明的SiC晶锭的加工方法，能够在SiC晶锭中形成适当的剥离带。
根据本发明的激光加工装置，能够在SiC晶锭中形成适当的剥离带。
附图说明
图1是本发明实施方式的激光加工装置的立体图。
图2是示出图1所示的激光加工装置的构成的一部分的框图。
图3是示出用于在SiC晶锭中形成适当的剥离带的、SiC晶锭的电阻率与激光光线的脉冲能量的关系的曲线图。
图4的(a)是SiC晶锭的主视图，图4的(b)是SiC晶锭的俯视图。
图5是示出实施平坦面形成工序的状态的立体图。
图6是示出实施电阻值测量工序的状态的主视图。
图7的(a)是示出实施剥离带形成工序的状态的立体图，图7的(b)是示出实施剥离带形成工序的状态的截面图。
图8是示出实施剥离工序的状态的立体图。
具体实施方式
下面参照附图对本发明的SiC晶锭的加工方法和激光加工装置的优选实施方式进行说明。
首先参照图1对按照本发明构成的激光加工装置的优选实施方式进行说明。整体由符号2表示的激光加工装置至少包含：保持单元4，其保持SiC晶锭；激光光线照射单元8，其具备聚光器6，该聚光器6将具有对于SiC晶锭来说为透过性的波长的激光光线的聚光点定位在与要生成的晶片的厚度对应的深度而对SiC晶锭照射激光光线，形成裂纹从SiC分离成Si(硅)和C(碳)的部分起沿着c面延伸的带状的剥离带；X轴进给机构10，其使保持单元4和聚光器6沿X轴方向相对地进行加工进给；Y轴进给机构12，其使保持单元4和聚光器6沿Y轴方向相对地进行分度进给；以及电阻值测量器14，其对SiC晶锭的端面的电阻值进行测量。本实施方式的激光加工装置2进一步具备控制单元16，该控制单元16与电阻值测量器14所测量的电阻值相对应地调整激光光线的输出(参照图2)。需要说明的是，X轴方向为图1中箭头X所示的方向，Y轴方向为图1中箭头Y所示的方向，是与X轴方向垂直的方向。X轴方向和Y轴方向所规定的平面实质上是水平的。
如图1所示，保持单元4包含：在X轴方向上移动自如地搭载在基台18上的X轴可动板20；在Y轴方向上移动自如地搭载在X轴可动板20上的Y轴可动板22；旋转自如地搭载在Y轴可动板22的上表面上的圆形的保持工作台24；以及使保持工作台24旋转的保持工作台用电动机(未图示)。
激光光线照射单元8包含从基台18的上表面向上方延伸、接着实质上水平地延伸的外壳26。如图2所示，在外壳26中内置有：振荡出具有对于SiC晶锭来说为透过性的波长的脉冲激光的激光振荡器28；对从激光振荡器28射出的脉冲激光光线LB的输出进行调整的衰减器30；以及使利用衰减器30调整了输出的脉冲激光光线LB进行反射而导向聚光器6的反光镜32。
如图1所示，激光光线照射单元8的聚光器6安装在外壳26的前端下表面。另外，激光光线照射单元8包含聚光点位置调整机构(未图示)。该聚光点位置调整机构例如可以为具有与聚光器6连结且沿上下方向延伸的滚珠丝杠、以及使该滚珠丝杠旋转的电动机的构成，调整激光振荡器28所射出的脉冲激光光线LB的聚光点的上下方向位置。
之后，将与c面相对于保持单元4所保持的SiC晶锭的端面倾斜而由SiC晶锭的端面和c面形成偏离角的方向垂直的方向作为X轴方向，将与X轴方向垂直的方向作为Y轴方向，聚光器6将具有对于SiC晶锭来说为透过性的波长的脉冲激光光线LB的聚光点定位在与要生成的晶片的厚度对应的深度，对SiC晶锭照射脉冲激光光线LB。
如图1所示，将对保持单元4所保持的SiC晶锭进行拍摄的拍摄单元34与聚光器6沿X轴方向隔开间隔地安装于外壳26的前端下表面。另外，在外壳26的上表面配置有显示出利用拍摄单元34拍摄的图像的显示单元36。
X轴进给机构10具有沿着基台18的上表面在X轴方向延伸的滚珠丝杠38、以及使滚珠丝杠38旋转的电动机40。滚珠丝杠38的螺母部(未图示)与X轴可动板20连结。并且，X轴进给机构10利用滚珠丝杠38将电动机40的旋转运动转换成直线运动并传递至X轴可动板20，使X轴可动板20沿着基台18上的导轨18a相对于聚光器6在X轴方向上相对地进行加工进给。
Y轴进给机构12具有沿着X轴可动板20的上表面在Y轴方向延伸的滚珠丝杠42、以及使滚珠丝杠42旋转的电动机44。滚珠丝杠42的螺母部(未图示)与Y轴可动板22连结。并且，Y轴进给机构12利用滚珠丝杠42将电动机44的旋转运动转换成直线运动并传递至Y轴可动板22，使Y轴可动板22沿着X轴可动板20上的导轨20a相对于聚光器6在Y轴方向上相对地进行分度进给。
如图1所示，电阻值测量器14与拍摄单元34沿X轴方向隔开间隔地安装于外壳26的前端下表面。作为电阻值测量器14，可以使用无接触式或接触式的公知的电阻测定仪(例如Napson株式会社销售的“CE-80P-PN涡流电流电阻测定仪(无接触式)”。利用电阻值测量器14测量的值可以为电阻(mΩ)，或者也可以为电阻率(mΩ·cm)。需要说明的是，在电阻值测量器14为接触式的情况下，可以在外壳26附设使电阻值测量器14升降的升降单元。
由计算机构成的控制单元16包含：根据控制程序进行运算处理的中央处理装置(CPU)；存储控制程序等的只读存储器(ROM)；以及存储运算结果等的可读写的随机存取存储器(RAM)(均未图示)。在控制单元16的只读存储器中预先存储有例如图3所示的用于在SiC晶锭中形成适当的剥离带的SiC晶锭的电阻率与激光光线的脉冲能量的关系。
对图3所示的关系进行说明，例如在SiC晶锭的端面的电阻率为22mΩ·cm的情况下，在照射至SiC晶锭的激光光线的脉冲能量为20μJ时，在SiC晶锭中形成适当的剥离带。但是，在电阻率为22mΩ·cm的情况下，在脉冲能量小于20μJ时，剥离带的裂纹不能充分生长，有可能无法从SiC晶锭适当地剥离晶片。另一方面，在电阻率为22mΩ·cm的情况下，在脉冲能量大于20μJ时，尽管能够以剥离带为起点从SiC晶锭适当地剥离晶片，但剥离带的裂纹会生长至所需要的程度以上，在从SiC晶锭剥离晶片后对SiC晶锭的剥离面和晶片的剥离面进行磨削使其平坦时的磨削量增多，使原材料的损失增大。
关于图3所示的用于在SiC晶锭中形成适当的剥离带的SiC晶锭的电阻率与激光光线的脉冲能量的关系，作为能够以剥离带为起点从SiC晶锭适当地剥离晶片、并且原材料损失比较少的关系，基于预先实施的实验的结果等来适宜地设定。
如图2所示，控制单元16与电阻值测量器14电连接，将利用电阻值测量器14测量的关于电阻值的信号从电阻值测量器14发送到控制单元16中。另外，控制单元16也与激光光线照射单元8的衰减器30电连接。并且，控制单元16通过与从电阻值测量器14发送的电阻值相对应地控制衰减器30来调整脉冲激光光线LB的输出，以使得能够在SiC晶锭中形成适当的剥离带。
如图1所示，本实施方式的激光加工装置2进一步具备以剥离带为起点而从SiC晶锭剥离晶片的剥离单元50、以及对SiC晶锭的端面进行磨削而使该端面形成为平坦面的磨削单元52。
剥离单元50包含：配置在基台18上的导轨18a的终端部的外壳54；从升降自如地支承于外壳54的基端沿X轴方向延伸的臂56；以及使臂56升降的臂升降单元(未图示)。臂升降单元可以为具有与臂56连结且沿上下方向延伸的滚珠丝杠、以及使该滚珠丝杠旋转的电动机的构成。在臂56的前端附设有电动机58，在电动机58的下表面以沿上下方向延伸的轴线为中心旋转自如地连结有吸附片60。在吸附片60的下表面形成有2个以上的吸引孔(未图示)，吸附片60与吸引单元(未图示)连接。另外，在吸附片60中内置有对于吸附片60的下表面赋予超声波振动的超声波振动赋予单元(未图示)。
磨削单元52包含：与外壳26连接的安装壁62；升降自如地安装于安装壁62的单面的升降板64；以及使升降板64升降的升降单元66。升降单元66具有沿着安装壁62的单面沿上下方向延伸的滚珠丝杠68、以及使滚珠丝杠68旋转的电动机70。滚珠丝杠68的螺母部(未图示)与升降板64连结。并且，在升降单元66中，利用滚珠丝杠68将电动机70的旋转运动转换成直线运动并传递至升降板64，使升降板64沿着附设于安装壁62的单面的导轨62a进行升降。
在升降板64的单面固定有沿Y轴方向突出的支承壁72。主轴74以沿上下方向延伸的轴线为中心旋转自如地支承于支承壁72，在支承壁72的上表面搭载有使主轴74旋转的主轴用电动机76。参照图1和图5进行说明，在主轴74的下端固定有圆板状的磨轮安装座78，在磨轮安装座78的下表面利用螺栓80固定有环状的磨削磨轮82。在磨削磨轮82的下表面的外周边部固定有沿周向隔开间隔地而呈环状配置的2个以上的磨削磨具84。
图4中示出了由SiC形成的圆柱状的SiC晶锭86。SiC晶锭86具有：圆形状的第一端面88；与第一端面88相反侧的圆形状的第二端面90；位于第一端面88和第二端面90之间的周面92；从第一端面88到第二端面90的c轴(<0001>方向)；以及与c轴垂直的c面({0001}面)。
在SiC晶锭86中，c面相对于第一端面88倾斜(c轴相对于第一端面88的垂线94倾斜)，由第一端面88和c面形成偏离角α(例如α＝1、3、6度)。形成偏离角α的方向如图4中箭头A所示。并且在SiC晶锭86的周面92上形成有均表示晶体取向的矩形状的第一定向平面96和第二定向平面98。第一定向平面96与形成偏离角α的方向A平行，第二定向平面98与形成偏离角α的方向A垂直。如图4的(b)所示，从上方看，第二定向平面98的长度L2比第一定向平面96的长度L1短(L2<L1)。
接着对本发明的SiC晶锭的加工方法的优选实施方式进行说明，此处对于使用上述的激光加工装置2的SiC晶锭的加工方法进行说明。在本实施方式的SiC晶锭的加工方法中，首先使第二端面90向下，借助适宜的粘接剂(例如环氧树脂系粘接剂)将SiC晶锭86固定于保持工作台24的上表面。需要说明的是，也可以在保持工作台24的上表面形成2个以上的吸引孔，在保持工作台24的上表面生成吸引力来吸引保持SiC晶锭86。
在将SiC晶锭86固定于保持工作台24后，除了SiC晶锭86的端面已经形成得平坦的情况以外，均实施对SiC晶锭86的端面进行磨削而使该端面形成为平坦面的平坦面形成工序。
在平坦面形成工序中，首先利用X轴进给机构10将保持工作台24定位在磨削单元52的磨削磨轮82的下方。接着，如图5所示，利用保持工作台用电动机使保持工作台24从上方看逆时针地以规定的旋转速度(例如300rpm)进行旋转。另外，利用主轴用电动机76使主轴74从上方看逆时针地以规定的旋转速度(例如6000rpm)进行旋转。接着，利用升降单元66使主轴74下降，使磨削磨具84与SiC晶锭86的第一端面88接触。之后，以规定的磨削进给速度(例如0.1μm/s)使主轴74下降。由此能够对SiC晶锭86的第一端面88进行磨削，形成为不会妨碍激光光线的入射的程度的平坦面。
在实施平坦面形成工序后，实施测量SiC晶锭86的第一端面88的电阻值的电阻值测量工序。在电阻值测量工序中，首先利用X轴进给机构10将保持工作台24定位在电阻值测量器14的下方，如图6所示，使SiC晶锭86的第一端面88与电阻值测量器14相对。接着，利用电阻值测量器14测量SiC晶锭86的第一端面88的电阻值。之后，将利用电阻值测量器14测量的关于电阻值的信号发送至控制单元16。需要说明的是，在电阻值测量器14为接触式的情况下，使SiC晶锭86的第一端面88与电阻值测量器14相对后，利用升降单元使电阻值测量器14下降，使电阻值测量器14的测量探针(未图示)与SiC晶锭86的第一端面88接触，测量SiC晶锭86的第一端面88的电阻值。
在实施电阻值测量工序后，实施激光光线输出调整工序，与利用电阻值测量工序测量的电阻值相对应地调整激光光线LB的输出。在激光光线输出调整工序中，基于SiC晶锭86的电阻值与激光光线LB的脉冲能量的关系(例如图3所示的关系)，与从电阻值测量器14发送的电阻值相对应地利用控制单元16控制激光光线照射单元8的衰减器30，调整照射至SiC晶锭86的脉冲激光光线LB的输出。
在实施激光光线输出调整工序后，实施剥离带形成工序，将与c面相对于SiC晶锭86的端面倾斜而由SiC晶锭86的端面和c面形成偏离角α的方向A垂直的方向作为X轴方向，将与X轴方向垂直的方向作为Y轴方向，将具有对于SiC晶锭86来说为透过性的波长的脉冲激光光线LB的聚光点定位在与要生成的晶片的厚度对应的深度，一边对SiC晶锭86照射脉冲激光光线LB一边使SiC晶锭86和聚光点沿X轴方向相对地进行加工进给，形成裂纹从SiC分离成Si和C的部分起沿着c面延伸的带状的剥离带。
在剥离带形成工序中，首先利用拍摄单元34从SiC晶锭86的上方对SiC晶锭86进行拍摄。接着，基于利用拍摄单元34拍摄的SiC晶锭86的图像，利用X轴进给机构10、Y轴进给机构12和保持工作台用电动机使保持工作台24移动和旋转，由此将SiC晶锭86的朝向调整为规定的朝向，并且调整SiC晶锭86和聚光器6在XY平面上的位置。在将SiC晶锭86的朝向调整为规定的朝向时，如图7的(a)所示，通过使第二定向平面98与X轴方向一致，而使与形成偏离角α的方向A垂直的方向与X轴方向一致，并且使形成偏离角α的方向A与Y轴方向一致。
接着，利用聚光点位置调整机构使聚光器6升降，从SiC晶锭86的第一端面88将脉冲激光光线LB的聚光点FP(参照图7的(b))定位在与要生成的晶片的厚度对应的深度。接着，一边利用X轴进给机构10使保持工作台24沿与垂直于形成偏离角α的方向A的方向一致的X轴方向以规定的加工进给速度进行加工进给，一边将具有对于SiC晶锭86来说为透过性的波长的脉冲激光光线LB从聚光器6照射至SiC晶锭86。由此，如图7的(b)所示，通过脉冲激光光线LB的照射将SiC分离成Si和C，接下来照射的脉冲激光光线LB被之前形成的C吸收而将SiC连锁地分离成Si和C，并且沿着X轴方向形成裂纹102从SiC分离成Si和C的部分100起沿着c面延伸的剥离带104。
这样的剥离带形成工序例如可以在下述条件下进行。需要说明的是，下述散焦是从脉冲激光光线LB的聚光点FP定位在SiC晶锭86的上表面的状态起使聚光器6向着SiC晶锭86的上表面移动时的移动量。
SiC晶锭的电阻率：16～22mΩ·cm
激光光线的脉冲能量：20～180μJ
波长：1064nm
平均输出：0.6～5.4W
重复频率：30kHz
脉冲宽度：3ns
加工进给速度：165mm/s
散焦：188μm
剥离带距离SiC晶锭的上表面的位置：500μm
接着实施分度进给工序，使SiC晶锭86和聚光点FP沿Y轴方向相对地进行分度进给，使剥离带104沿Y轴方向并排设置。在分度进给工序中，通过利用Y轴进给机构12使保持工作台24移动，在与形成偏离角α的方向A一致的Y轴方向上按照规定的分度进给量Li使SiC晶锭86相对于聚光点FP相对地进行分度进给。
之后，通过交替反复进行上述剥离带形成工序和分度进给，如图7所示，将沿X轴方向延伸的剥离带104沿Y轴方向隔开规定分度进给量Li的间隔进行并排设置。需要说明的是，使分度进给量Li为不超过裂纹102的宽度的范围，使在Y轴方向上相邻的剥离带104的裂纹102从上下方向看彼此重叠，由此容易在下述的剥离工序中进行晶片的剥离。
在SiC晶锭86的内部(与要生成的晶片的厚度对应的深度)形成2个以上的剥离带104后，实施以剥离带104为起点从SiC晶锭86剥离晶片的剥离工序。
在剥离工序中，首先利用X轴进给机构10将保持工作台24定位在剥离单元50的吸附片60的下方。接着，利用臂升降单元使臂56下降，如图8所示，使吸附片60的下表面与SiC晶锭86的第一端面88密合。接着，使吸引单元工作，将吸附片60的下表面吸附至SiC晶锭86的第一端面88。接着，使超声波振动赋予单元工作，对吸附片60的下表面赋予超声波振动，并且利用电动机58使吸附片60旋转。由此，能够以剥离带104为起点进行晶片106的剥离。
在实施剥离工序后，反复进行如上所述的平坦面形成工序、电阻值测量工序、激光光线输出调整工序、剥离带形成工序、分度进给工序和剥离工序，由此能够由SiC晶锭86生成2个以上的晶片106。
如上所述，本实施方式中，测量SiC晶锭86的端面的电阻值并与所测量的电阻值相对应地调整脉冲激光光线LB的输出，因此能够在SiC晶锭86中形成适当的剥离带104。
需要说明的是，在上述的说明中，对于在SiC晶锭86中形成剥离带104而由SiC晶锭86生成晶片106的示例进行了说明，但在本发明中，也可以在SiC晶片中形成剥离带，将例如厚度1mm左右的1片SiC晶片分割成厚度0.5mm左右的2片SiC晶片。这种情况下，分割前的该1片SiC晶片相当于本发明中的SiC晶锭。
符号说明
2：激光加工装置
4：保持单元
6：聚光器
8：激光光线照射单元
10：X轴进给机构
12：Y轴进给机构
14：电阻值测量器
16：控制单元
86：SiC晶锭
88：第一端面
90：第二端面
100：SiC分离成Si和C的部分
102：裂纹
104：剥离带
106：晶片
LB：脉冲激光光线
FP：脉冲激光光线的聚光点
α：偏离角
A：形成偏离角的方向

Claims (4)

1.一种SiC晶锭的加工方法，其是具有端面的SiC晶锭的加工方法，其具备下述工序：
电阻值测量工序，测量SiC晶锭的该端面的电阻值；
激光光线输出调整工序，与利用该电阻值测量工序测量的电阻值相对应地调整激光光线的输出；
剥离带形成工序，将与c面相对于SiC晶锭的该端面倾斜而由SiC晶锭的该端面和该c面形成偏离角的方向垂直的方向作为X轴方向，将与该X轴方向垂直的方向作为Y轴方向，将具有对于SiC晶锭来说为透过性的波长的激光光线的聚光点定位在与要生成的晶片的厚度对应的深度，一边对SiC晶锭照射激光光线一边使SiC晶锭和该聚光点沿该X轴方向相对地进行加工进给，形成裂纹从SiC分离成Si和C的部分起沿着该c面延伸的带状的剥离带；以及
分度进给工序，使SiC晶锭和该聚光点沿该Y轴方向相对地进行分度进给，使剥离带沿该Y轴方向并排设置。
2.如权利要求1所述的SiC晶锭的加工方法，其进一步具备平坦面形成工序，在该剥离带形成工序之前对SiC晶锭的该端面进行磨削而使该端面形成为平坦面。
3.一种激光加工装置，其是在SiC晶锭中形成剥离带的激光加工装置，该激光加工装置具备：
保持工作台，其保持SiC晶锭；
激光光线照射单元，其包含聚光器，将与c面相对于该保持工作台所保持的SiC晶锭的端面倾斜而由SiC晶锭的该端面和该c面形成偏离角的方向垂直的方向作为X轴方向，将与该X轴方向垂直的方向作为Y轴方向，该聚光器将具有对于SiC晶锭来说为透过性的波长的激光光线的聚光点定位在与要生成的晶片的厚度对应的深度而对SiC晶锭照射激光光线，形成裂纹从SiC分离成Si和C的部分起沿着该c面延伸的带状的剥离带；
X轴进给机构，其使该保持工作台和该聚光器沿该X轴方向相对地进行加工进给；
Y轴进给机构，其使该保持工作台和该聚光器沿该Y轴方向相对地进行分度进给；以及
电阻值测量器，其对SiC晶锭的该端面的电阻值进行测量。
4.如权利要求3所述的激光加工装置，其进一步具备控制单元，该控制单元与该电阻值测量器所测量的电阻值相对应地调整激光光线的输出。
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