CN113035980B - Near-infrared image sensor and preparation method thereof - Google Patents
Near-infrared image sensor and preparation method thereof Download PDFInfo
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- CN113035980B CN113035980B CN202110262139.3A CN202110262139A CN113035980B CN 113035980 B CN113035980 B CN 113035980B CN 202110262139 A CN202110262139 A CN 202110262139A CN 113035980 B CN113035980 B CN 113035980B
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- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims description 18
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000002955 isolation Methods 0.000 claims description 8
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 12
- 230000009286 beneficial effect Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
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- 238000011982 device technology Methods 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- 125000006850 spacer group Chemical group 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
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Abstract
The invention discloses a near-infrared image sensor and a preparation method thereof. The near-infrared image sensor comprises a substrate made of a first material, wherein the substrate comprises photodiode areas, the photodiode areas comprise grooves formed in the substrate and U-shaped second material layers located on the inner walls of the grooves, and the forbidden bandwidth of the second material is smaller than that of the first material. The preparation method comprises the following steps: providing a substrate, the substrate being made of a first material, the substrate comprising respective photodiode regions; forming a trench in a photodiode region of a substrate; and epitaxially growing a U-shaped second material layer on the inner wall of the groove, wherein the forbidden bandwidth of the second material is smaller than that of the first material. The second material layer on the side wall of the groove in the near-infrared image sensor not only improves the absorption of normal incidence near-infrared light, but also is beneficial to the absorption of photons accumulated on the side wall during oblique incidence, thereby reducing crosstalk and improving the quantum efficiency of near-infrared wave bands.
Description
Technical Field
The present invention relates to the field of semiconductor device technology, and more particularly, to a Near Infrared (NIR) image sensor and a method for fabricating the same.
Background
Back-illuminated complementary metal oxide semiconductor (BSI-CMOS) image sensors have become the mainstream of mobile phone cameras, and the demand for Near Infrared (NIR) image sensors for iris verification, face recognition, and dynamic capture is increasing. The back-illuminated image sensor is a sensor more suitable for Near Infrared (NIR), but because the near infrared application wavelength is longer (700nm to 1000nm), the quantum efficiency of the conventional pixel structure in the NIR band is lower, for example, the quantum efficiency in the 850nm band is about 10% and the quantum efficiency in the 940nm band is about 4%, so that it becomes more important to enhance the NIR sensitivity. The simplest approach is to increase the thickness of the incident photon absorbing layer, but process limitations such as high energy implantation make this difficult.
The conventional front-illuminated image sensor also faces the situation of low red light quantum efficiency due to the shallow depth of the photodiode, so that the problem of improving the absorption efficiency of red light and near infrared light is urgently solved.
Disclosure of Invention
The invention innovatively provides a Near Infrared (NIR) image sensor and a preparation method thereof, and the absorption efficiency of near infrared band light can be obviously improved by introducing a second material epitaxial layer.
To achieve the above technical objects, in one aspect, the present invention discloses a near infrared image sensor. The near-infrared image sensor comprises a substrate, wherein the substrate is made of a first material and comprises photodiode areas, the photodiode areas comprise grooves formed in the substrate and U-shaped second material layers located on the inner walls of the grooves, and the forbidden bandwidth of the second material is smaller than that of the first material.
Further, for the near infrared image sensor, the photodiode region further includes a first material layer filled in the second material layer.
Further, for the near-infrared image sensor, the first material is silicon, and the second material is silicon germanium.
Further, the near-infrared image sensor is a front-illuminated image sensor or a back-illuminated image sensor.
Further, the near-infrared image sensor also comprises a back deep channel isolation region formed by filling medium between adjacent grooves and/or a substrate region between adjacent grooves.
Further, in the case where the near-infrared image sensor is a back-illuminated image sensor, the near-infrared image sensor further includes a dielectric layer formed on the back surface of the substrate, a metal grid in the dielectric layer, and a microlens on the back surface of the dielectric layer.
Further, the near-infrared image sensor further includes a transfer gate formed on the front surface of the substrate.
In order to achieve the above technical object, in another aspect, the present invention discloses a method for manufacturing a near-infrared image sensor. The preparation method of the near-infrared image sensor comprises the following steps: providing a substrate made of a first material, the substrate comprising respective photodiode regions; forming a trench in the photodiode region of the substrate; and epitaxially growing a U-shaped second material layer on the inner wall of the groove, wherein the forbidden bandwidth of the second material is smaller than that of the first material.
Further, for the method for manufacturing the near-infrared image sensor, after the U-shaped second material layer is epitaxially grown on the inner wall of the trench, the method further includes: and epitaxially growing the first material in the U-shaped second material layer to fill the groove.
Further, for the preparation method of the near-infrared image sensor, the first material is silicon, and the second material is silicon germanium.
The invention has the beneficial effects that:
in the near-infrared (NIR) image sensor and the preparation method thereof provided by the embodiment of the invention, the second material layer on the side wall of the groove in the near-infrared image sensor not only improves the absorption of normal incidence near-infrared light, but also is beneficial to the absorption of photons accumulated on the side wall during oblique incidence, thereby reducing crosstalk and improving the quantum efficiency of NIR waveband.
Drawings
In the figure, the position of the upper end of the main shaft,
fig. 1 is a schematic structural diagram of a near-infrared image sensor provided in embodiment 1 of the present invention;
FIG. 2 is a simulation graph of photon number density absorbed by a near infrared image sensor with a backside deep trench isolation structure according to an exemplary embodiment of the present invention;
fig. 3 is a schematic structural diagram of a near-infrared image sensor provided in embodiment 2 of the present invention;
fig. 4 is a schematic structural diagram of a near-infrared image sensor provided in embodiment 3 of the present invention
Fig. 5A to 5F are flowcharts of a method for manufacturing a near-infrared image sensor according to embodiment 4 of the present invention.
Detailed Description
The present invention provides a near-infrared image sensor and a method for manufacturing the same, which are explained and illustrated in detail below with reference to the drawings.
Fig. 1 is a schematic structural diagram of a near-infrared image sensor according to an embodiment of the present invention. As shown in fig. 1, this embodiment provides a Near Infrared (NIR) image sensor including a substrate made of a first material. The substrate includes respective photodiode regions 110. The photodiode region 110 includes a trench formed on a substrate, and a U-shaped second material layer 120 on an inner wall of the trench. Wherein the forbidden band width of the second material is smaller than that of the first material.
As an alternative implementation, the photodiode region 110 of this embodiment may further include a first material layer filled in the U-shaped second material layer 120.
In this embodiment, the substrate may be a silicon-based substrate, i.e., the first material may be silicon and the second material may be silicon germanium. Because the forbidden bandwidth of germanium-silicon is smaller than that of silicon, the absorption efficiency is higher for the near-infrared band with longer wavelength and smaller single photon energy. The U-shaped germanium-silicon layer grown by epitaxy not only improves the absorption of normal incidence near infrared light, but also is beneficial to the absorption of photons accumulated on the side wall during oblique incidence, thereby reducing crosstalk and improving quantum efficiency.
The near-infrared image sensor of this embodiment may further include backside deep trench isolation regions 130 formed by dielectric fill between adjacent trenches and/or substrate regions between adjacent trenches.
The near-infrared image sensor of this embodiment may be a front-illuminated image sensor or a back-illuminated image sensor.
Fig. 1 is a schematic structural diagram of a near-infrared image sensor provided in embodiment 1 of the present invention. As shown in fig. 1, the near-infrared image sensor of embodiment 1 is a back-illuminated image sensor. The Near Infrared (NIR) image sensor of embodiment 1 includes a substrate made of a first material. The substrate includes respective photodiode regions 110. The photodiode region 110 includes a trench formed on a substrate, and a U-shaped second material layer 120 on an inner wall of the trench. The photodiode region 110 may further include a first material layer filled in the U-shaped second material layer 120. The near-infrared image sensor of this embodiment further includes a back-side deep trench isolation (BDTI) structure 130. The near infrared image sensor of this embodiment may further include a dielectric layer 140 formed on the back surface of the substrate, a metal grid 150 within the dielectric layer 140, and a Microlens (ML) 160 on the back surface of the dielectric layer 140. The near-infrared image sensor of this embodiment may further include a transfer gate 170 formed on the front surface of the substrate. As shown in fig. 2, angularly incident light accumulates at the sidewalls due to the blocking of the BDTI structure, and effectively absorbing this portion of light both increases quantum efficiency and reduces optical crosstalk.
Fig. 3 is a schematic structural diagram of a near-infrared image sensor provided in embodiment 2 of the present invention. As shown in fig. 3, the near-infrared image sensor of embodiment 2 is a back-illuminated image sensor, and the structure of the near-infrared image sensor of embodiment 2 is mainly different from that of embodiment 1 in that: the BDTI structure in the near-infrared image sensor of example 1 was removed. The near-infrared image sensor of embodiment 2 does not include a Back Deep Trench Isolation (BDTI) structure. The second material layer formed by epitaxy can well absorb light from adjacent pixels (pixels), so that no electrons can electrically escape from the inside of the pixels to the adjacent pixels under the action of an electric field, and the generation of optical crosstalk is effectively avoided. The light on the side wall is absorbed through the second material layer, the crosstalk is reduced while the quantum efficiency is improved, and the near infrared image sensor with the BDTI structure has smaller dark current compared with the near infrared image sensor without the BDTI structure.
Fig. 4 is a schematic structural diagram of a near-infrared image sensor provided in embodiment 3 of the present invention. As shown in fig. 4, the near-infrared image sensor of embodiment 3 is a front-illuminated image sensor. The Near Infrared (NIR) image sensor of embodiment 3 includes a substrate made of a first material. The substrate includes respective photodiode regions 110. The photodiode region 110 includes a trench formed on a substrate, and a U-shaped second material layer 120 on an inner wall of the trench. The photodiode region 110 may further include a first material layer filled in the U-shaped second material layer. The near-infrared image sensor of embodiment 3 may further include a metal layer 450 formed on the front surface of the substrate, a dielectric layer 440 between the metal layers, a transfer gate 470 within the dielectric layer 440, an anti-reflective dielectric layer 480 formed on the front surface of the metal layer 450, a filter 490 formed on the front surface of the anti-reflective dielectric layer 480, and a microlens 460 formed on the front surface of the filter 490.
Fig. 5A to 5F are flowcharts of a method for manufacturing a near-infrared image sensor according to embodiment 4 of the present invention.
As shown in fig. 5A-5F, in step 1, a substrate is provided, the substrate being made of a first material, the substrate including respective photodiode regions 110.
In step 2, a trench is formed in the photodiode region 110 of the substrate. In particular, regions of the substrate corresponding to Near Infrared (NIR) pixels may be trenched.
In step 3, a U-shaped second material layer 120 is epitaxially grown on the inner wall of the trench, and the forbidden bandwidth of the second material is smaller than that of the first material.
The method for manufacturing the near-infrared image sensor of this embodiment may further include, after step 3, the steps of: a first material is epitaxially grown in the U-shaped second material layer 120 to fill the trench.
The method for manufacturing the near-infrared image sensor according to this embodiment may further include the following steps after the first material is epitaxially grown in the U-shaped second material layer 120 to fill the trench: performing ion implantation (implant) in the photodiode region 110; poly deposition (poly deposition) to form the transfer gate 170; forming a side wall (spacer); forming an Inter Layer Dielectric (ILD); and forming a metal interconnection layer.
The method for manufacturing the near-infrared image sensor of this embodiment may further include, after forming the metal interconnection layer, the steps of: thinning the back of the substrate; and (5) manufacturing a back structure. In the case where the near-infrared image sensor is a back-illuminated image sensor, the second material layer 120 may serve as a back-side thinning stop layer.
For the case where the near infrared image sensor is a back-illuminated image sensor and includes a back side deep trench isolation structure, the step of fabricating the back side structure may further include the steps of: forming a back deep trench isolation structure 130; depositing to form a dielectric layer 140; forming a metal grid (metal grid) 150; passivation (passivation); a microlens (ML, microlens) 160 is formed.
In this embodiment, the first material may be silicon and the second material may be silicon germanium. The germanium-silicon process is compatible with the existing silicon-based process, so that the germanium-silicon process is easier to apply to the existing image sensor process, and the MOS device is still manufactured on the silicon-based substrate. The proportion of germanium in the germanium-silicon layer can be adjusted so as to adjust the forbidden bandwidth of the germanium-silicon layer, so that the NIR absorption efficiency is higher.
In the near-infrared (NIR) image sensor and the preparation method thereof provided by the embodiment of the invention, the second material layer on the side wall of the groove in the near-infrared image sensor not only improves the absorption of normal incidence near-infrared light, but also is beneficial to the absorption of photons accumulated on the side wall during oblique incidence, thereby reducing crosstalk and improving the quantum efficiency of NIR waveband.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the description herein, references to the description of the term "the present embodiment," "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and simplifications made in the spirit of the present invention are intended to be included in the scope of the present invention.
Claims (10)
1. A near-infrared image sensor is characterized by comprising a substrate, wherein the substrate is made of a first material and comprises photodiode areas, the photodiode areas comprise grooves formed in the substrate, U-shaped second material layers are located on the inner walls of the grooves, and the forbidden band width of the second material is smaller than that of the first material.
2. The near-infrared image sensor of claim 1, wherein the photodiode region further comprises a first material layer filled in the U-shaped second material layer.
3. The near-infrared image sensor according to claim 1 or 2, wherein the first material is silicon and the second material is silicon germanium.
4. The near-infrared image sensor of claim 1, wherein the near-infrared image sensor is a front-illuminated image sensor or a back-illuminated image sensor.
5. The near-infrared image sensor of claim 1, further comprising backside deep trench isolation regions formed by dielectric filling between adjacent trenches and/or substrate regions between adjacent trenches.
6. The near-infrared image sensor of claim 1, wherein for the case where the near-infrared image sensor is a back-illuminated image sensor, the near-infrared image sensor further comprises a dielectric layer formed on the back side of the substrate, a metal grid within the dielectric layer, and a microlens on the back side of the dielectric layer.
7. The near-infrared image sensor of claim 6, further comprising a transfer gate formed on the front surface of the substrate.
8. A method for manufacturing a near-infrared image sensor is characterized by comprising the following steps:
providing a substrate made of a first material, the substrate comprising respective photodiode regions;
forming a trench in the photodiode region of the substrate;
and epitaxially growing a U-shaped second material layer on the inner wall of the groove, wherein the forbidden bandwidth of the second material is smaller than that of the first material.
9. The method for manufacturing a near-infrared image sensor according to claim 8, further comprising, after epitaxially growing a U-shaped second material layer on the inner wall of the trench: and epitaxially growing the first material in the U-shaped second material layer to fill the groove.
10. The method of claim 8 or 9, wherein the first material is silicon and the second material is silicon germanium.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008026178A (en) * | 2006-07-21 | 2008-02-07 | Advanced Telecommunication Research Institute International | Tactile sensor device |
| CN104201184A (en) * | 2014-09-24 | 2014-12-10 | 格科微电子（上海）有限公司 | Image sensor and forming method thereof |
| ITUB20169957A1 (en) * | 2016-01-13 | 2017-07-13 | Lfoundry Srl | METHOD FOR MANUFACTURING NIR CMOS PERFORMED SENSORS |
| CN107305901A (en) * | 2016-04-19 | 2017-10-31 | 豪威科技股份有限公司 | Imaging sensor, imaging system and method for making image sensor |
| EP3610510A1 (en) * | 2017-04-13 | 2020-02-19 | Artilux Inc. | Germanium-silicon light sensing apparatus ii |
| CN111146221A (en) * | 2019-11-26 | 2020-05-12 | 上海集成电路研发中心有限公司 | Wide-spectrum image sensor structure and forming method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7436038B2 (en) * | 2002-02-05 | 2008-10-14 | E-Phocus, Inc | Visible/near infrared image sensor array |
| US10009552B2 (en) * | 2012-09-20 | 2018-06-26 | Semiconductor Components Industries, Llc | Imaging systems with front side illuminated near infrared imaging pixels |
| US9799702B2 (en) * | 2016-03-24 | 2017-10-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deep trench isolation structure and method of forming same |
| CN109037249B (en) * | 2017-06-12 | 2021-11-02 | 上海耕岩智能科技有限公司 | Image detection display device, device and preparation method thereof |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008026178A (en) * | 2006-07-21 | 2008-02-07 | Advanced Telecommunication Research Institute International | Tactile sensor device |
| CN104201184A (en) * | 2014-09-24 | 2014-12-10 | 格科微电子（上海）有限公司 | Image sensor and forming method thereof |
| ITUB20169957A1 (en) * | 2016-01-13 | 2017-07-13 | Lfoundry Srl | METHOD FOR MANUFACTURING NIR CMOS PERFORMED SENSORS |
| CN107305901A (en) * | 2016-04-19 | 2017-10-31 | 豪威科技股份有限公司 | Imaging sensor, imaging system and method for making image sensor |
| EP3610510A1 (en) * | 2017-04-13 | 2020-02-19 | Artilux Inc. | Germanium-silicon light sensing apparatus ii |
| CN111146221A (en) * | 2019-11-26 | 2020-05-12 | 上海集成电路研发中心有限公司 | Wide-spectrum image sensor structure and forming method |
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