CN113028967A - Flexible micro-displacement sensor and flexible micro-displacement sensing device - Google Patents
Flexible micro-displacement sensor and flexible micro-displacement sensing device Download PDFInfo
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- CN113028967A CN113028967A CN202110319968.0A CN202110319968A CN113028967A CN 113028967 A CN113028967 A CN 113028967A CN 202110319968 A CN202110319968 A CN 202110319968A CN 113028967 A CN113028967 A CN 113028967A
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- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
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Abstract
The invention relates to a flexible micro-displacement sensor and a flexible micro-displacement sensing device, wherein the flexible micro-displacement sensor comprises a plurality of flexible electric conductors which are vertically overlapped, gaps are formed among different flexible electric conductors, and filling media are arranged in the gaps; when the distance between two adjacent flexible electric conductors in the vertical direction is reduced, the resistance between the two flexible electric conductors is exponentially attenuated. When the distance between the inner flexible electric conductors is changed due to the deformation of the flexible micro-displacement sensor caused by the external action, the resistance between two adjacent flexible electric conductors is exponentially attenuated along with the reduction of the distance, and the sensitivity of the micro-displacement sensor is greatly improved.
Description
Technical Field
The invention relates to the technical field of sensor equipment, in particular to a flexible micro-displacement sensor and a flexible micro-displacement sensing device.
Background
At present, the principle of the commercial displacement sensor is that the sensitive material is acted by stress and pressure, and the micro deformation of the sensitive material causes the change of an electrical signal.
The conventional displacement sensor mainly comprises a strain gauge, wherein the basic structure of the strain gauge comprises a flexible substrate and metal copper circuits distributed on the substrate. When the strain gauge is attached to a detection sample and the sample is stretched in parallel along the strain gauge, the metal copper circuit is weakly deformed, so that the resistance change of the metal copper circuit is caused. As the circuit of the metal copper has very good conductivity, most of the metal copper is in the hundred ohm level, the sensitivity coefficient is 2.0 +/-1%, and the resistance change caused by the micron level deformation is possibly only one percent of order change, the precision requirement on the detection equipment is improved. In addition, the strain gauge is used for detecting displacement parallel to the substrate direction thereof, and therefore, it needs to be attached to a test sample and cannot be used alone, and a displacement signal perpendicular to the substrate direction cannot be effectively detected.
Therefore, the micro-displacement sensor represented by the strain gauge has the problems of weak signal and single detection direction.
Therefore, the invention of a micro-displacement sensor which has high stability and high sensitivity and can detect displacement signals in the vertical direction is an urgent need for the development of industrial technology.
Disclosure of Invention
Based on this, the present invention provides a flexible micro-displacement sensor and a flexible micro-displacement sensing device, wherein when the distance between two adjacent flexible conductors changes due to the deformation caused by the external action, the resistance between two adjacent flexible conductors decreases exponentially with the decrease of the distance, thereby greatly improving the sensitivity of the micro-displacement sensor.
In a first aspect, the present invention provides a flexible micro-displacement sensor comprising:
the flexible conductors are vertically stacked, gaps are formed among different flexible conductors, and filling media are filled in the gaps;
when the distance between two adjacent flexible electric conductors in the vertical direction is reduced, the resistance between the two flexible electric conductors is exponentially attenuated.
Furthermore, the flexible conductor comprises a plurality of conductive films which are vertically overlapped at equal intervals.
Further, the flexible electric conductor comprises conductive fibers, and the conductive fibers are arranged in a staggered and superposed mode.
Further, the flexible conductor comprises a conductive film and conductive fibers, and the conductive film and the conductive fibers are arranged in a staggered and overlapped mode.
Further, the filling medium is air.
Further, the conductive film is any one of: metal thin film, metal nanowire thin film, semiconductor thin film.
Further, the conductive fiber is any one of the following: carbon fiber filaments, metal wires, conductive polymer fibers.
In a second aspect, the present invention further provides a flexible micro-displacement sensing device, comprising a flexible substrate and the flexible micro-displacement sensor according to the first aspect of the present invention, wherein the flexible micro-displacement sensor is disposed on the flexible substrate.
Further, the device comprises a plurality of flexible micro-displacement sensors which are connected in series or in parallel.
Further, for two flexible micro-displacement sensors connected in series, the two flexible micro-displacement sensors have a common flexible conductor and are connected in series through the common flexible conductor, and the common flexible conductor is located at the top or the bottom of the two flexible micro-displacement sensors connected in series.
According to the flexible micro-displacement sensor and the flexible micro-displacement sensing device provided by the embodiment of the invention, the plurality of flexible electric conductors are vertically overlapped, and the distance between two adjacent flexible electric conductors in the vertical direction is set to be smaller than the first distance, so that an electronic tunneling action can be generated between the two adjacent flexible electric conductors, when the distance between the two adjacent flexible electric conductors is changed due to the deformation generated by the external action, the resistance between the two adjacent flexible electric conductors is exponentially attenuated along with the reduction of the distance due to the generation of the electronic tunneling action, and the sensitivity of the micro-displacement sensor is greatly improved.
For a better understanding and practice, the invention is described in detail below with reference to the accompanying drawings.
Drawings
FIG. 1 is a schematic diagram of the basic structure of a flexible micro-displacement sensor according to an embodiment of the present invention;
FIG. 2 is a graph illustrating the variation of the interface resistance between two adjacent conductive films with the distance when the tunneling action of electrons occurs;
FIG. 3 is a schematic diagram of power connections for a flexible micro-displacement sensor in accordance with an embodiment of the invention;
FIG. 4 is a schematic diagram of the flexible micro-displacement sensor in an unstressed use state;
FIG. 5 is a schematic diagram of the flexible micro-displacement sensor in use when a force F1 is applied to the sensor;
FIG. 6 is a schematic diagram of the flexible micro-displacement sensor in use when a force F2 is applied to the sensor;
FIG. 7 is a graphical representation of performance test results for the flexible micro-displacement sensor of FIGS. 3-6;
FIG. 8 is a schematic structural diagram of a flexible micro-displacement sensor in one embodiment of the present invention;
FIG. 9 is a schematic structural diagram of a flexible micro-displacement sensor in accordance with an embodiment of the present invention;
FIG. 10 is a schematic diagram of the basic structure of a flexible micro-displacement sensing device according to an embodiment of the present invention;
FIG. 11 is a schematic structural view of a flexible micro-displacement sensing device in one embodiment;
fig. 12 is a schematic structural view of a flexible micro-displacement sensing device in one embodiment.
Detailed Description
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
Referring to fig. 1, which is a schematic diagram illustrating a basic structure of a flexible micro-displacement sensor 10 according to an embodiment of the present invention, in fig. 1, the flexible micro-displacement sensor 10 includes a plurality of flexible conductive films 11, the plurality of flexible conductive films 11 are vertically stacked, and a gap is formed between every two adjacent flexible conductive films 11, and a non-conductive filling medium is filled in the gap.
In the example of fig. 1, the distance between each two adjacent conductive films 11 is the same d0, and the distance d0 is such that the resistance between the two adjacent conductive films 11 decays exponentially as the distance between the two adjacent conductive films 11 decreases.
According to the description in quantum mechanics, the occurrence probability of electron tunneling increases exponentially as the tunneling distance decreases, and therefore, as the two adjacent conductive thin films 11 are within the distance where electron tunneling occurs and the distance between the two adjacent conductive thin films decreases, the occurrence probability of electron tunneling behavior continuously increases, thereby causing the interface resistance between the two adjacent conductive thin films 11 to exhibit an exponential decay characteristic.
As shown in fig. 2, fig. 2 is a curve that causes the interface resistance between two adjacent conductive films 11 to change with distance when the electron tunneling behavior occurs, and it can be seen from fig. 2 that the interface resistance between two adjacent conductive films 11 decreases with distance when the electron tunneling behavior occurs, and in fig. 2, R is the interface resistance between two adjacent conductive films 11, Δ d is the distance change between two adjacent conductive films 11, R0 is the initial resistance between two adjacent conductive films 11, and k is a constant calibrated according to the conductive film characteristic experiment.
Therefore, the value of d0 is within a distance range where electron tunneling behavior can occur between two adjacent conductive films 11, that is, the distance d0 allows electrons on the surface of one conductive film 11 to tunnel into the other conductive film 11 along the direction of the electric field line, and when the distance d0 is decreased, the probability of electron tunneling behavior increases exponentially, so that the interface resistance between two adjacent conductive films 11 decreases exponentially with the decrease of the distance.
In the embodiment of the present invention, the conductive film 11 may be made of conductive materials such as a metal film, a metal nanowire film, and a semiconductor film, and when distances of the electron tunneling phenomenon generated by different conductive materials are different, the distances of the electron tunneling phenomenon generated by different conductive materials may be measured through experiments, and then the value of d0 is determined.
In a specific application, as shown in fig. 3, the conductive film 11 on the top is connected to the negative electrode of the dc power U, and the conductive film 11 on the bottom is connected to the positive electrode of the dc power U, so that electrons on the surface of the conductive film 11 on the top tunnel to the conductive film 11 under the top along the direction of the electric lines of force.
In other examples, the top conductive film 11 may be connected to the positive electrode of the dc power source U, and the bottom conductive film 11 may be connected to the negative electrode of the dc power source U, so that electrons on the surface of the lower conductive film 11 tunnel to the upper conductive film 11 along the direction of the electric lines of force.
Fig. 4-6 are schematic diagrams of several states of use of the flexible micro-displacement sensor 10, in fig. 4, the distance between adjacent conductive films 11 of the micro-displacement sensor 10 is kept at d0 when not being subjected to external action; in fig. 5, the micro-displacement sensor 10 is applied with a force F1 vertically downward from the top, so that each conductive film 11 is displaced such that the distance between each two adjacent conductive films 11 is reduced from d0 to d 1; in fig. 5, the micro-displacement sensor 10 is applied with a force F2 from the top and vertically downward, so that each conductive film 11 is displaced such that the distance between each two adjacent conductive films 11 is reduced from d0 to d2, wherein F2 is greater than F1, and d2< d1< d 0.
Fig. 7 is a test result of the flexible micro-displacement sensor 10 of fig. 3-6, and it can be seen that the resistance of the flexible micro-displacement sensor 10 is exponentially attenuated during the linear decrease of the distance between the conductive films 11 from d0 to d1 or d 2.
When the resistance of the flexible micro-displacement sensor 10 decays exponentially, the current of the loop formed by the flexible micro-displacement sensor and the dc power supply U rises exponentially, and by detecting the current, the amount of change in the resistance generated by the flexible micro-displacement sensor 10 can be measured, and further the amount of change in the displacement generated by the flexible micro-displacement sensor 10 due to the force F1 or the force F2 can be obtained according to the above-mentioned curve.
In the example of fig. 3, the displacement amount range Δ d of the flexible micro-displacement sensor 10 is the sum of the distances between 4 conductive films, i.e., 4 times d0, and in other examples, when the number of conductive films 11 is greater, the displacement amount range Δ d of the flexible micro-displacement sensor 10 may also be the sum of the distances between a greater number of conductive films 11.
In other examples, the distance between each conductive film 11 may be different, for example, the distance between two adjacent conductive films 11 may be arranged in a trend of increasing or decreasing from top to bottom. When an external force is applied, the displacements of different conductive films 11 may be different, for example, the displacement of the conductive film 11 near the top may be larger than the displacement of the conductive film 11 near the bottom, but when the external force is applied to the conductive film 11 near the top, as a whole, the conductive film 11 at the top transfers the force downwards in sequence through the filling medium, so that each conductive film 11 generates displacements with similar amplitudes, and the resistance change of the whole micro-displacement sensor 10 is in an exponential attenuation relationship in fig. 7 compared with the total displacement change.
In the embodiment of the present invention, the displacement change generated by the micro displacement sensor 10 may be a deformation displacement generated by the action of gravity of an object, the pressure of gas, the pressure of liquid, or the like, and the direction of the deformation displacement is a vertical direction.
In the example of fig. 1, the filling medium between the conductive films 11 is preferably air, and in other embodiments, the filling medium may be other non-conductive gas according to different application scenarios.
As shown in fig. 8, in another embodiment, the flexible conductive body constituting the flexible micro-displacement sensor 10 may further include a plurality of flexible conductive fibers 12, and since the diameter of the conductive fibers 12 is smaller, in the example of fig. 8, the plurality of conductive fibers 12 are alternately stacked in the vertical direction, and the distance between two adjacent conductive fibers 12 in the vertical direction is within a range of a distance between the two adjacent conductive fibers 12 where an electron tunneling behavior can occur, that is, the distance is such that electrons on the surface of one conductive fiber 12 tunnel into another or a plurality of adjacent conductive fibers 12 along the direction of the electric line of force, and when the distance becomes smaller, the probability of the electron tunneling behavior increases exponentially.
In the example of fig. 8, the conductive fiber 12 at the top is connected to the negative electrode of the dc power source U, and the conductive fiber at the bottom is connected to the positive electrode of the dc power source U, so that the electrons on the surface of the upper conductive fiber 12 tunnel to the conductive fiber 12 below the upper conductive fiber along the direction of the power line.
In another embodiment, as shown in fig. 9, the flexible electrical conductor constituting the flexible micro-displacement sensor 10 comprises a plurality of flexible conductive fibers 12 and at least one conductive film 11, exemplified by 1 conductive film 11 in fig. 9. Because the diameters of the conductive fibers 12 are smaller, in fig. 9, the conductive fibers 12 are arranged in a staggered manner in the vertical direction, and the distance between two adjacent conductive fibers 12 in the vertical direction is within a range of the distance between the two adjacent conductive fibers 12, where the electron tunneling behavior can occur, that is, the distance enables electrons on the surface of one conductive fiber 12 to tunnel into another conductive fiber or conductive fibers 12 along the direction of the electric line of force, and when the distance becomes smaller, the probability of the occurrence of the electron tunneling behavior increases exponentially. In the example of fig. 9, the distance between at least one conductive fiber 12 and the conductive film 11 is within a range of a distance between the conductive fiber 12 and the conductive film 11, where the distance enables electrons on the surface of one conductive fiber 12 to tunnel into the conductive film 11 along the direction of the electric line of force, and when the distance is smaller, the probability of occurrence of the electron tunneling between the conductive fiber 12 and the conductive film 11 increases exponentially.
In the example of fig. 8 and 9, the conductive fibers 12 may be carbon fiber filaments, metal wires, conductive polymer fibers, or the like. In another example, the flexible micro-displacement sensor 10 according to the present invention may be another flexible conductor or a combination thereof stacked in the vertical direction, and the resistance between two flexible conductors may exponentially decrease when the distance between the two flexible conductors adjacent to each other in the vertical direction decreases.
Referring to fig. 10, which is a schematic diagram of a basic structure of a flexible micro-displacement sensing device 20 according to an embodiment of the present invention, the flexible micro-displacement sensing device 20 includes a flexible substrate 21 and any one of the flexible micro-displacement sensors 10 in the foregoing embodiments, in fig. 10, the flexible micro-displacement sensor 10 is exemplarily set by vertically overlapping a plurality of conductive films 11 at equal intervals, and the conductive film 11 at the bottommost portion of the flexible micro-displacement sensor 10 is fixed on the flexible substrate 21, where the flexible substrate 21 may be a flexible circuit board.
In other examples, the flexible micro-displacement sensing device 20 may further include a plurality of flexible micro-displacement sensors 10 disposed on the flexible substrate 21, and the plurality of flexible micro-displacement sensors 10 are connected in parallel or in series.
Referring to fig. 11, fig. 11 illustrates a scenario in which a plurality of flexible micro-displacement sensors 10 are serially connected to each other and disposed on a flexible substrate 21, and the plurality of flexible micro-displacement sensors 10 are serially connected to each other, so that resistance changes generated by the plurality of flexible micro-displacement sensors 10 are mutually overlapped under the condition of generating the same deformation displacement, thereby exponentially increasing the sensitivity of the flexible micro-displacement sensor device 20.
In fig. 11, a plurality of flexible micro-displacement sensors 10 are connected in series with each other by a wire. Referring to fig. 12, in a preferred embodiment, two flexible micro-displacement sensors connected in series have a common conductive film 11, and are connected in series through the common conductive film 11, and the common conductive film 11 may be specifically located on the top or bottom of two flexible micro-displacement sensors 10 connected in series.
According to the flexible micro-displacement sensor and the flexible micro-displacement sensing device provided by the embodiment of the invention, the plurality of flexible electric conductors are vertically overlapped, and the distance between two adjacent flexible electric conductors in the vertical direction is set to be smaller than the first distance, so that an electronic tunneling action can be generated between the two adjacent flexible electric conductors, when the distance between the two adjacent flexible electric conductors is changed due to the deformation generated by the external action, the resistance between the two adjacent flexible electric conductors is exponentially attenuated along with the reduction of the distance due to the generation of the electronic tunneling action, and the sensitivity of the micro-displacement sensor is greatly improved.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention.
Claims (10)
1. A flexible micro-displacement sensor is characterized in that:
the flexible power supply comprises a plurality of flexible electric conductors, wherein the flexible electric conductors are vertically stacked, gaps are formed among different flexible electric conductors, and filling media are arranged in the gaps;
when the distance between two adjacent flexible electric conductors in the vertical direction is reduced, the resistance between the two flexible electric conductors is exponentially attenuated.
2. A flexible micro-displacement sensor according to claim 1, wherein:
the flexible conductor comprises a plurality of conductive films which are vertically overlapped at equal intervals.
3. A flexible micro-displacement sensor according to claim 1, wherein:
the flexible conductor comprises conductive fibers, and the conductive fibers are arranged in a staggered and superposed mode.
4. A flexible micro-displacement sensor according to claim 1, wherein:
the flexible conductor comprises a conductive film and conductive fibers, and the conductive film and the conductive fibers are arranged in a staggered and superposed mode.
5. A flexible micro-displacement sensor according to claim 1, wherein:
the filling medium is air.
6. A flexible micro-displacement sensor according to claim 2, wherein:
the conductive film is any one of the following: metal thin film, metal nanowire thin film, semiconductor thin film.
7. A flexible micro-displacement sensor according to claim 3, wherein:
the conductive fiber is any one of the following: carbon fiber filaments, metal wires, conductive polymer fibers.
8. A flexible micro-displacement sensing device is characterized in that:
comprising a flexible substrate and a flexible micro-displacement sensor according to any of claims 1-7, which is arranged on the flexible substrate.
9. A flexible micro-displacement sensing device according to claim 8, wherein:
the device comprises a plurality of flexible micro-displacement sensors arranged on the flexible substrate, and the plurality of flexible micro-displacement sensors are mutually connected in series or in parallel.
10. A flexible micro-displacement sensing device according to claim 9, wherein:
aiming at two flexible micro-displacement sensors which are connected in series, the two flexible micro-displacement sensors have a common flexible conductor and are connected in series through the common flexible conductor, and the common flexible conductor is positioned at the top or the bottom of the two flexible micro-displacement sensors which are connected in series.
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