CN113025977A - Method and device for modulating free carrier absorption in lead telluride film - Google Patents
Method and device for modulating free carrier absorption in lead telluride film Download PDFInfo
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- CN113025977A CN113025977A CN202110160016.9A CN202110160016A CN113025977A CN 113025977 A CN113025977 A CN 113025977A CN 202110160016 A CN202110160016 A CN 202110160016A CN 113025977 A CN113025977 A CN 113025977A
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract
The invention provides a method and a device for modulating free carrier absorption in a lead telluride film, which adopts a radio frequency magnetron sputtering instrument, and the scheme comprises the following steps: setting relevant sputtering technological parameters; obtaining a free carrier absorption and substrate temperature curve of the lead telluride film; determining a mapping relation between the stoichiometric ratio and the substrate temperature according to the curve; based on the mapping relation, the modulation of free carrier absorption in the lead telluride film is realized by adjusting the substrate temperature; obtaining a lead telluride film with a preset stoichiometric ratio; according to the scheme, the stoichiometric ratio of the prepared lead telluride film is changed by adjusting the temperature of the substrate, so that the amount of the lead element precipitated in the film is changed, the intensity of impurity scattering free carriers is changed, the purpose of modulating the absorption of the free carriers is achieved, and the controllable adjustment of different stoichiometric ratios of the lead telluride film is further realized.
Description
Technical Field
The disclosure belongs to the technical field of preparation of semiconductor materials, and particularly relates to a method and a device for modulating free carrier absorption in a lead telluride film.
Background
The statements in this section merely provide background information related to the present disclosure and may not necessarily constitute prior art.
Free carrier absorption is the absorption of incident photon energy by free carriers (e.g., free electrons) in the photovoltaic material. In order to satisfy the energy conservation and momentum conservation in the absorption process of free carriers to photons, a third particle is also required to participate in the scattering of the free carriers. There are generally three types of particles that implement scattering of free carriers, which are: phonons, longitudinal optical phonons, and doping impurities.
The inventors have found that the photon energy absorbed by the free carriers is less than the band gap energy of the photovoltaic material, and that absorption of the photon energy only transitions to the higher energy state of this energy level, and no electron-hole pairs are generated, generally regarded as detrimental absorption. In the application of photoelectric materials, the existing method generally aims to remove the free carrier absorption process as much as possible without considering the effective utilization of the free carrier absorption in the control of the stoichiometric ratio of the photoelectric materials (namely, the free carrier absorption process is used as a gain source of photoelectric emission), and how to modulate the free carrier absorption process to purposefully change the photoelectric characteristics of the photoelectric materials is a technical problem which is urgently needed to be solved by the prior art.
Disclosure of Invention
In order to solve the problems, the invention provides a method and a device for modulating the absorption of free carriers in a lead telluride film.
According to a first aspect of the embodiments of the present disclosure, there is provided a method for modulating free carrier absorption in a lead telluride film, using a radio frequency magnetron sputtering apparatus, the method including:
setting relevant sputtering technological parameters;
obtaining a free carrier absorption and substrate temperature curve of the lead telluride film;
determining a mapping relation between the stoichiometric ratio and the substrate temperature according to the curve;
and based on the mapping relation, realizing the modulation of free carrier absorption in the lead telluride film by adjusting the substrate temperature, and obtaining the lead telluride film with a preset stoichiometric ratio.
Furthermore, the method needs to fix the substrate on a substrate platform in a vacuum chamber of the radio frequency magnetron sputtering equipment in advance, and install the lead telluride target on the radio frequency magnetron target position.
Furthermore, the setting of the related sputtering process parameters comprises the setting of substrate rotation rate, vacuum degree pumping degree of the vacuum chamber, radio frequency power source power and sputtering time.
Furthermore, the acquisition of the free carrier absorption and substrate temperature curve of the lead telluride film is obtained by performing FTIR spectrum test on the prepared lead telluride film.
Further, the step of determining the mapping relationship between the stoichiometric ratio and the substrate temperature according to the curve includes: and (3) carrying out chemical component analysis on the lead telluride film by using a Cameca SX50 electron probe microanalyzer to determine the mapping relation between the substrate temperature and the stoichiometric ratio of the lead telluride.
Further, the background vacuum setting of the method is 5.0 x 10-4Pa, before preparing the lead telluride film, introducing Ar gas with the purity of 99.999 percent into a vacuum chamber system, wherein the required working air pressure is 0.45 Pa.
Further, in the method, the substrate temperature is adjusted within the range from room temperature to 650 ℃, and the closer the substrate temperature is to the preparation temperature of the stoichiometric ratio, the less free carriers are absorbed; the more the preparation temperature deviates from the stoichiometric ratio, the more free carrier absorption.
According to a second aspect of the embodiments of the present disclosure, there is provided an apparatus for modulating free carrier absorption in a lead telluride film, which includes a radio frequency magnetron sputtering apparatus and a PID temperature controller, wherein the PID temperature controller adjusts the temperature of a substrate by using the above method for modulating free carrier absorption in a lead telluride film.
Furthermore, the radio frequency magnetron sputtering instrument adopts a JGP-450 type radio frequency magnetron sputtering instrument.
Further, the substrate adopts BaF2(111) And (3) a single wafer.
Compared with the prior art, the beneficial effect of this disclosure is:
(1) the scheme disclosed by the invention adopts a magnetron sputtering method to prepare the lead telluride film, and the stoichiometric ratio of the prepared lead telluride film is changed by adjusting the substrate temperature, so that the amount of lead element precipitated in the film is changed, the intensity of free carriers scattered by impurities is changed, and the purpose of modulating the absorption of the free carriers is achieved.
(2) According to the scheme disclosed by the invention, when the lead telluride film is prepared, other impurity sources are not needed, only the substrate temperature is changed, and the difference of the saturated vapor pressures of two elements in the lead telluride compound is utilized, so that the stoichiometric ratio of the prepared lead telluride film is mismatched, and the self-doping is realized.
(3) The substrate heating used in the scheme of the disclosure is accurate PID temperature controller temperature control, and the substrate temperature can be adjusted within the range from room temperature to 650 ℃; when the substrate temperature is 150 ℃, the absorption of free carriers is minimum, and the composition of the lead telluride film is close to the stoichiometric ratio. That is, the closer to the stoichiometric preparation temperature, the less free carrier absorption; the more the deviation from the stoichiometric preparation temperature, the more free carrier absorption; therefore, the purpose of modulating free carrier absorption can be achieved by changing the substrate temperature when the film is prepared.
Advantages of additional aspects of the disclosure will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the disclosure.
Drawings
The accompanying drawings, which are included to provide a further understanding of the disclosure, illustrate embodiments of the disclosure and together with the description serve to explain the disclosure and are not to limit the disclosure.
Fig. 1 is a schematic structural diagram of a magnetron sputtering system for preparing a lead telluride film in the first embodiment of the disclosure;
fig. 2 is a graph of the chemical composition of a lead telluride film as a function of substrate temperature in accordance with a first embodiment of the present disclosure;
fig. 3 is a graph of the free carrier absorption of the lead telluride film according to the first embodiment of the present disclosure as a function of the substrate temperature.
Detailed Description
The present disclosure is further described with reference to the following drawings and examples.
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the disclosure. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
The embodiments and features of the embodiments in the present disclosure may be combined with each other without conflict. The first embodiment is as follows:
the purpose of the embodiment is to provide a method for modulating free carrier absorption in the lead telluride film.
A method for modulating free carrier absorption in a lead telluride film adopts a radio frequency magnetron sputtering instrument, and comprises the following steps:
setting relevant sputtering technological parameters;
obtaining a free carrier absorption and substrate temperature curve of the lead telluride film;
determining a mapping relation between the stoichiometric ratio and the substrate temperature according to the curve;
based on the mapping relation, the modulation of free carrier absorption in the lead telluride film is realized by adjusting the substrate temperature; and obtaining the lead telluride film with the preset stoichiometric ratio.
Specifically, for ease of understanding, the scheme of the present disclosure is described in detail by a specific modulation process:
lead telluride is a narrow band gap semiconductor material commonly used for infrared detection and thermoelectric conversion. The method for preparing the lead telluride film comprises magnetron sputtering, thermal evaporation and laser sputtering. Because the difference between the saturated vapor pressure of tellurium and lead in lead telluride is large, the lead telluride compound with strict stoichiometric ratio is difficult to realize, lead is excessive, and the excessive lead becomes impurity lead. But this also provides a possible way to modulate the free carrier absorption of lead telluride.
The method adopts a magnetron sputtering method to prepare the lead telluride film, and changes the stoichiometric ratio of the prepared lead telluride film by adjusting the substrate temperature, thereby changing the amount of lead element separated out from the film, being used for changing the intensity of free carriers scattered by impurities and achieving the purpose of modulating the absorption of the free carriers.
According to the method, when the lead telluride film is prepared, other impurity sources are not needed, only the temperature of the substrate is changed, and the difference of saturated vapor pressures of two elements in the lead telluride compound is utilized, so that the mismatch of the stoichiometric ratio of the prepared lead telluride film is realized, and the self-doping is realized.
Fig. 1 shows a schematic structural diagram of a magnetron sputtering system for preparing a lead telluride film, and the magnetron sputtering device used in the experiment is a JGP-450 type radio frequency magnetron sputtering apparatus. As shown in fig. 1, the bottom of the vacuum chamber has three cathode targets (one cathode target is inside two targets drawn in the figure and not shown), one of which is a radio frequency magnetron sputtering target. The lead telluride (PbTe) target used in the experiment is arranged on a radio frequency magnetic control target position. And placing the substrate required by the experiment on the substrate holder, and fixing the substrate by the fixing clamping piece. Each target can be water-cooled, the diameter of the target table is 60mm, and the distance between the target and the substrate holder is adjustable (40-80 mm). After the vacuum pumping is carried out for 2 hours, the background vacuum of 5.0 multiplied by 10 required by the experiment can be achieved-4Pa. Before preparing the sample, high-purity Ar gas (99.999%) is introduced into a vacuum chamber system, and the working pressure required by the experiment is 0.45 Pa. The substrate heating used in the instrument is a precise PID temperature controller temperature control, and the substrate temperature can be adjusted within the range from room temperature to 650 ℃. The effect of substrate temperature on the chemical composition of the lead telluride film is shown in fig. 2. Fig. 2 shows that the composition of the lead telluride film is close to the stoichiometric ratio at a substrate temperature of 150 ℃.
Furthermore, the method needs to fix the substrate on a substrate platform in a vacuum chamber of the radio frequency magnetron sputtering equipment in advance, and install the lead telluride target on the radio frequency magnetron target position.
Further, the setting of the relevant sputtering process parameters comprises the setting of substrate rotation rate, vacuum degree pumping degree of a vacuum chamber, radio frequency power source power and sputtering time, wherein the substrate rotation rate is-10 revolutions per minute (r/min); the vacuum degree of the vacuum chamber is 5 multiplied by 10 < -4 > Pa; radio frequency power 20W; the sputtering time is 2 h.
The chemical composition of the lead telluride film is shown in fig. 2 as a function of the substrate temperature by chemical composition analysis of the lead telluride film using a Cameca SX50 electron probe microanalyzer to determine a function of the substrate temperature as a function of the lead telluride stoichiometric ratio.
Fig. 3 shows a relationship curve between free carrier absorption of the lead telluride film and substrate temperature, where the substrate temperature is different and the intensity of free carrier absorption is changed when the lead telluride film is prepared. Fig. 3 shows that free carrier absorption is minimal at a substrate temperature of 150 c, when the composition of the lead telluride film is near stoichiometric. That is, the closer to the stoichiometric preparation temperature, the less free carrier absorption; the more the preparation temperature deviates from the stoichiometric ratio, the more free carrier absorption. Therefore, the purpose of modulating free carrier absorption can be achieved by changing the substrate temperature when the film is prepared.
Example two:
the purpose of this embodiment is to provide a device for modulating free carrier absorption in a lead telluride film.
An apparatus for modulating free carrier absorption in a lead telluride film comprising: the device comprises a radio frequency magnetron sputtering instrument and a PID temperature controller, wherein the PID temperature controller adjusts the temperature of the substrate by using the method for modulating the absorption of free carriers in the lead telluride film.
Furthermore, the radio frequency magnetron sputtering instrument adopts a JGP-450 type radio frequency magnetron sputtering instrument.
Further, the substrate adopts BaF2(111) And (3) a single wafer.
The method and the device for modulating the absorption of the free carriers in the lead telluride film can be realized, and have wide application prospect.
The above description is only a preferred embodiment of the present disclosure and is not intended to limit the present disclosure, and various modifications and changes may be made to the present disclosure by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure.
Although the present disclosure has been described with reference to specific embodiments, it should be understood that the scope of the present disclosure is not limited thereto, and those skilled in the art will appreciate that various modifications and changes can be made without departing from the spirit and scope of the present disclosure.
Claims (10)
1. A method for modulating free carrier absorption in a lead telluride film by adopting a radio frequency magnetron sputtering instrument is characterized by comprising the following steps:
setting relevant sputtering technological parameters;
obtaining a free carrier absorption and substrate temperature curve of the lead telluride film;
determining a mapping relation between the stoichiometric ratio and the substrate temperature according to the curve;
based on the mapping relation, the modulation of free carrier absorption in the lead telluride film is realized by adjusting the substrate temperature; and obtaining the lead telluride film with the preset stoichiometric ratio.
2. The method for modulating the free carrier absorption in the lead telluride film as in claim 1, wherein the method requires fixing the substrate on a substrate platform in a vacuum chamber of a radio frequency magnetron sputtering apparatus in advance, and mounting the lead telluride target on a radio frequency magnetron target position.
3. The method for modulating the absorption of free carriers in the lead telluride film as in claim 1, wherein the setting of the relevant sputtering process parameters includes setting of substrate rotation rate, vacuum pumping degree of the vacuum chamber, radio frequency power source power and sputtering time.
4. The method for modulating the free carrier absorption in the lead telluride film as claimed in claim 1, wherein the curve of the free carrier absorption of the lead telluride film and the substrate temperature is obtained by performing FTIR spectroscopy on the prepared lead telluride film.
5. The method for modulating free carrier absorption in a lead telluride film as claimed in claim 1, wherein said determining a mapping relationship between a stoichiometric ratio and a substrate temperature according to said curve comprises the steps of: and (3) carrying out chemical component analysis on the lead telluride film by using a Cameca SX50 electron probe microanalyzer to determine the mapping relation between the substrate temperature and the stoichiometric ratio of the lead telluride.
6. The method of modulating free carrier absorption in a lead telluride film as in claim 1 wherein the background vacuum setting of said method is 5.0 x 10-4Pa, before preparing the lead telluride film, introducing Ar gas with the purity of 99.999 percent into a vacuum chamber system, wherein the required working air pressure is 0.45 Pa.
7. The method for modulating free carrier absorption in a lead telluride film as in claim 1 wherein the substrate temperature is adjusted in the range of room temperature to 650 ℃ and the closer to the stoichiometric preparation temperature, the less free carrier absorption; the more the preparation temperature deviates from the stoichiometric ratio, the more free carrier absorption.
8. A device for modulating free carrier absorption in a lead telluride film is characterized by comprising a radio frequency magnetron sputtering instrument and a PID temperature controller, wherein the PID temperature controller is connected with a heater positioned on a substrate holder, and the PID temperature controller is used for carrying out temperature regulation on a substrate by using the method for modulating free carrier absorption in the lead telluride film as claimed in any one of claims 1 to 7.
9. The device for modulating the free carrier absorption in the lead telluride film as in claim 8, wherein the radio frequency magnetron sputtering apparatus is a JGP-450 type radio frequency magnetron sputtering apparatus.
10. The device for modulating free carrier absorption in a lead telluride film as in claim 8 wherein said substrate is of BaF2(111) And (3) a single wafer.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4057476A (en) * | 1976-05-26 | 1977-11-08 | General Dynamics Corporation | Thin film photovoltaic diodes and method for making same |
| CN109592651A (en) * | 2018-12-03 | 2019-04-09 | 山东建筑大学 | A kind of lead telluride thin film |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4057476A (en) * | 1976-05-26 | 1977-11-08 | General Dynamics Corporation | Thin film photovoltaic diodes and method for making same |
| CN109592651A (en) * | 2018-12-03 | 2019-04-09 | 山东建筑大学 | A kind of lead telluride thin film |
Non-Patent Citations (1)
| Title |
|---|
| 隋明晓等: "射频磁控溅射法制备碲化铅薄膜的X射线衍射分析", 《理化检验(物理分册)》 * |
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