CN109355638B - Preparation method of phase-change controllable all-inorganic perovskite film and device application - Google Patents

Preparation method of phase-change controllable all-inorganic perovskite film and device application Download PDF

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CN109355638B
CN109355638B CN201811532568.2A CN201811532568A CN109355638B CN 109355638 B CN109355638 B CN 109355638B CN 201811532568 A CN201811532568 A CN 201811532568A CN 109355638 B CN109355638 B CN 109355638B
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徐伟龙
蔡小红
陈海悦
郑敏
肖进
赵宇
卞维柏
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Changzhou Institute of Technology
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Abstract

The invention belongs to the technical field of photoelectric functional materials, and particularly relates to a preparation method of a phase-change controllable all-inorganic perovskite thin film and application of a device. The method comprises the following steps: (1) respectively placing precursor lead bromide and cesium bromide in a vapor deposition device, placing a substrate in a deposition area, and vacuumizing the whole device; (2) introducing inert gas into the vapor deposition device; (3) setting deposition temperature and deposition time, wherein the deposition temperature is selected from 500-800 ℃, and the perovskite thin film has different components and crystal forms at different deposition temperatures. The invention adopts the chemical vapor deposition method, has simple process conditions, easy and accurate control, is suitable for industrialized production, has good film uniformity, good adhesiveness with the substrate material and good coverage, and the prepared photoelectric film has wide application prospect. The invention realizes that the perovskite phase is CsPb through changing the deposition temperature2Br5To CsPbBr3And (4) controllable growth. The photoelectric detector prepared on the basis of the perovskite thin film obtained by the invention has good photoelectric response and switching characteristics.

Description

Preparation method of phase-change controllable all-inorganic perovskite film and device application
Technical Field
The invention belongs to the technical field of photoelectric functional materials, and particularly relates to a preparation method of a phase-change controllable all-inorganic perovskite thin film and application of a device.
Background
In recent years, organic and inorganic hybrid perovskite has a wide application prospect in the fields of solar cells, light emitting diodes and detectors due to the characteristics of wide spectrum absorption, adjustable electronic characteristics, high carrier mobility and the like. However, the development of organic-inorganic hybrid perovskite materials is largely hindered by the phenomena of phase separation and light-induced halogen separation. And the metal ions (such as cesium, rubidium and the like) are adopted to replace organic ions, so that the scheme for solving the problem of very good thermal instability of the perovskite is provided. Thus, a wide variety of solution-based methods are used to grow morphologically controlled all-inorganic perovskite crystals, and perovskite devices prepared based on such crystals exhibit excellent performance. However, for the industrial application of large-sized perovskite devices, the solution method is limited by the insufficient film thickness and phase transition, that is, all inorganic perovskites are generally prepared by the solution method, but the solution method is challenging in the preparation of large-area, high-surface-coverage and large-thickness films.
The chemical vapor deposition can be used for preparing high-quality electronic thin films and organic-inorganic hybrid perovskite thin films, the preparation of all-inorganic perovskite thin films is less, and the research on the deposition temperature is less on the structure, the appearance and the optical characteristics of the thin films. In order to meet the rapid development requirement of optoelectronic devices, the research and development of all-inorganic perovskite materials with controllable phase change are very important.
Disclosure of Invention
In view of the technical problems in the prior art, the invention relates to a method for preparing an all-inorganic perovskite thin film with controllable phase change by using a Chemical Vapor Deposition (CVD) method. The invention utilizes a chemical vapor deposition method to control the components and the crystal form of the perovskite film by adjusting the deposition temperature so as to prepare the high-quality all-inorganic perovskite film.
The technical scheme adopted by the invention is as follows.
The invention provides a preparation method of a phase-change controllable all-inorganic perovskite film, which comprises the following specific steps:
(1) respectively placing precursor lead bromide and cesium bromide in a vapor deposition device, placing a substrate in a deposition area, and vacuumizing the whole device;
(2) introducing inert gas into the vapor deposition device;
(3) setting deposition temperature and deposition time, wherein the deposition temperature is selected from 500-800 ℃, and the perovskite thin film has different components and crystal forms at different deposition temperatures.
In the step (1), vacuumizing to 100Pa, and repeating for 3 times to remove redundant oxygen and water vapor; the substrate material is silicon.
In the step (2), the inert gas is argon, and the flow rate is 80 sccm.
The heating procedure in the step (3) is as follows: heating from room temperature to set temperature for 60min, maintaining for 40min, stopping heating, and cooling to room temperature.
Experiments prove that under the conditions of heating time of 60min and holding time of 40min, when the deposition temperature is 500 ℃, the obtained perovskite is substantially CsPb2Br5Phase (1); when the deposition temperature is 600 ℃ and 700 ℃, the obtained perovskite is CsPb2Br5-CsPbBr3Biphasic structure and CsPbBr with increasing temperature3Increasing phases; when the deposition temperature is 750 ℃, the obtained perovskite is substantially CsPbBr3Phase (1); when the substrate temperature is 800 ℃, the perovskite thin film is degraded.
The invention leads the precursors of cesium bromide (CsBr) and lead bromide (PbBr) before deposition2) Separately placing the perovskite thin films, and finally forming the perovskite thin films with different morphologies, crystals and defect states on the substrate through the change of the deposition temperature. The invention can realize the preparation of the full inorganic perovskite film with different phases, improve the perovskite crystallization quality and reduce the defect state density.
Due to the large difference of the melting points of the precursor materials, when the film is prepared by chemical vapor deposition, the selection of a proper deposition temperature is the key for growing the high-quality perovskite film and realizing the controllable growth of the perovskite crystalline phase. In the process of one deposition, a determined deposition temperature can be set to obtain the perovskite thin film with uniform components and crystal structures, and different deposition temperatures can be set in different stages to obtain the perovskite thin film with layered distribution and variable components and crystal structures.
The invention also provides a preparation method of the perovskite photoelectric device, the device comprises a substrate and a perovskite thin film, the substrate is an interdigital electrode, and the perovskite thin film is prepared by the preparation method of the phase-change controllable all-inorganic perovskite thin film.
The interdigital electrode is a silicon substrate, and the electrode material is gold.
Compared with other processes, the inorganic perovskite film prepared by the method has the following excellent effects:
(1) the chemical vapor deposition method is adopted, the process conditions are simple, the precise control is easy, the method is suitable for industrial production, meanwhile, the uniformity of the film is good, the adhesion with the substrate material and the coverage are good, and the prepared photoelectric film has wide application prospect;
(2) by changing the deposition temperature, the perovskite phase is changed from CsPb2Br5To CsPbBr3Controllable growth;
(3) with the change of the deposition temperature, the crystallization characteristic, the morphological characteristic and the photophysical characteristic of the prepared perovskite thin film are correspondingly changed, and with the rise of the temperature (500-750 ℃), the size of perovskite crystal grains is gradually increased, the density of defect states is gradually reduced, and the crystallization quality of the thin film is improved;
(4) the photoelectric detector prepared based on the perovskite thin film shows good photoelectric response and switching characteristics;
(5) for other types of perovskite thin films (ABX)3) Materials can also be deposited by the method, and the method has universality.
Drawings
FIG. 1 is a schematic diagram of a perovskite thin film prepared by chemical vapor deposition according to an embodiment of the present invention;
FIG. 2 is an X-ray diffraction spectrum of a perovskite thin film according to an embodiment of the present invention;
FIG. 3 is a graph showing the morphology and elemental distribution of a perovskite thin film according to an embodiment of the present invention;
FIG. 4 is a fluorescent spectrum and a fluorescent image of a perovskite thin film according to an embodiment of the present invention;
FIG. 5 is a time-resolved fluorescence spectrum image of a perovskite thin film and a fluorescence decay curve according to an embodiment of the present invention;
FIG. 6 shows the perovskite-based thin film optoelectronic device structure and performance in an embodiment of the present invention.
Detailed Description
In order to more clearly illustrate the technical solutions of the present invention, the following description is given with reference to specific embodiments and accompanying drawings, and it is obvious that the embodiments in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other embodiments can be obtained according to these embodiments without any inventive work.
Example 1
The vapor deposition apparatus used in this example and the principle of producing a perovskite thin film by chemical vapor deposition are shown in fig. 1. In the examples, a Chemical Vapor Deposition (CVD) apparatus was used, the reactants were cesium bromide and lead bromide, the purity was 99% or more, the carrier gas was argon, the purity was 99% or more, and the substrate material was silicon, P-type, and (100) crystal face. In the device preparation process, the interdigital electrode is used as a substrate, and the electrode material is gold. Are all commercially available products.
CsPb growth by CVD technique2Br5Perovskite thin film material:
1. respectively placing reactants of cesium bromide and lead bromide in a CVD system, and placing a substrate in a deposition area, so as to be beneficial to the reaction and deposition of gas-phase substances;
2. starting a mechanical pump, vacuumizing to 100Pa, and repeating for three times;
3. starting a heating program, setting the temperature at 500 ℃, heating for 60min, and then keeping the temperature for 40 min;
4. argon gas is introduced while heating, and the flow rate of the gas is set to be 80 sccm;
5. after the reaction was completed, it was cooled to room temperature.
As can be seen from FIG. 2a, the perovskite prepared at 500 ℃ is CsPb2Br5And (4) phase(s). As can be seen from FIG. 3(a deposition temperature of 500 deg.C, b deposition temperature of 600 deg.C, c deposition temperature of 700 deg.C, d and e deposition temperatures of 750 deg.C, and f deposition temperature of 800 deg.C), the perovskite has a non-uniform surface and a small particle size, and Cs, Pb and Br are uniformly distributed on the surface of the thin film at a ratio of 11:23:57 to CsPb2Br5Is very similar to that of XThe results of the ray diffraction tests are identical.
Depositing the perovskite thin film on a silicon substrate interdigital electrode, wherein the electrode material is gold, obtaining the perovskite photoelectric device, and carrying out performance test, as shown in figure 6.
Example 2
The vapor deposition apparatus and the raw materials of this example were the same as those of example 1.
CsPb growth by CVD technique2Br5-CsPbBr3Biphase perovskite thin film material
The preparation steps and process conditions were as described in example 1, except that:
the process conditions are as follows: the growth temperature is 600 ℃, the heating time from room temperature to 600 ℃ is 60min, the reaction time is 40min at the temperature, and the flow rate of the carrier gas is 80 sccm.
As shown in FIG. 2b, the perovskite prepared at 600 ℃ is CsPb2Br5-CsPbBr3Two-phase structure, i.e. CsPbBr begins to appear in perovskite3And (4) phase(s). As can be seen from FIG. 3b, the surface of the perovskite thin film is relatively uniform, and the particle size is increased
Depositing the perovskite thin film on a silicon substrate interdigital electrode, wherein the electrode material is gold, obtaining the perovskite photoelectric device, and carrying out performance test, as shown in figure 6.
Example 3:
the vapor deposition apparatus and the raw materials of this example were the same as those of example 1.
CVD technology for growing CsPb2Br5-CsPbBr3 biphase perovskite thin film material
The preparation steps and process conditions were as described in example 1, except that:
the process conditions are as follows: the growth temperature is 700 ℃, the heating time from room temperature to 700 ℃ is 60min, the reaction time is 40min at the temperature, and the flow rate of the carrier gas is 80 sccm.
As shown in FIG. 2c, the perovskite prepared at 700 ℃ is CsPb2Br5-CsPbBr3Two-phase structure, CsPbBr3The specific phase gravity increases significantly. As can be seen from FIG. 3c, the particle size of the surface of the perovskite thin film is large.
Depositing the perovskite thin film on a silicon substrate interdigital electrode, wherein the electrode material is gold, obtaining the perovskite photoelectric device, and carrying out performance test, as shown in figure 6.
Example 4:
the vapor deposition apparatus and the raw materials of this example were the same as those of example 1.
CsPbBr growth by CVD technique3Phase perovskite thin film material
The preparation steps and process conditions were as described in example 1, except that:
the process conditions are as follows: the growth temperature is 750 ℃, the heating time from room temperature to 750 ℃ is 60min, the reaction time is 40min at the temperature, and the flow rate of the carrier gas is 80 sccm.
As shown in FIG. 2d, the perovskite prepared at 750 ℃ is CsPbBr3A single phase structure. As can be seen from FIGS. 3d-e, the particles of the perovskite thin film are mainly spherical, and the imaging test of an energy spectrometer shows that the ratio of Cs, Pb and Br is 16:17:48, and CsPbBr3The stoichiometric ratios in (a) are very similar, which is consistent with the X-ray diffraction test results.
Depositing the perovskite thin film on a silicon substrate interdigital electrode, wherein the electrode material is gold, obtaining the perovskite photoelectric device, and carrying out performance test, as shown in figure 6.
Example 5:
the vapor deposition apparatus and the raw materials of this example were the same as those of example 1.
High temperature degradation of perovskite thin film materials
The preparation steps and process conditions were as described in example 1, except that:
the process conditions are as follows: the growth temperature is 800 ℃, the heating time from room temperature to 800 ℃ is 60min, the reaction time is 40min at the temperature, and the flow rate of the carrier gas is 80 sccm.
As shown in fig. 2e, the perovskite thin film prepared under the 800 ℃ condition was degraded. As can be seen in fig. 3f, the perovskite becomes a layered structure.
Depositing the perovskite thin film on a silicon substrate interdigital electrode, wherein the electrode material is gold, obtaining the perovskite photoelectric device, and carrying out performance test, as shown in figure 6.
FIG. 4 is a photoluminescence spectrum of the perovskite thin films of examples 1 to 5, wherein the peak position of the luminescence is concentrated at 530-540nm, which is typical of green light. The emission peak position is red-shifted with the increase of temperature, and the full width at half maximum is narrowed, which also reflects the reduction of perovskite structure defects.
FIG. 5 is a time-resolved fluorescence spectroscopy image of the perovskite thin films of examples 1-5 above (a deposition temperature of 500 deg.C, b deposition temperature of 600 deg.C, c deposition temperature of 700 deg.C, d deposition temperature of 750 deg.C, e deposition temperature of 800 deg.C), which allows differentiation of photoexcitation kinetics at different locations, avoiding local information that is evenly covered by the overall spectrum. Fluorescence attenuation lines were extracted from different positions of the image and fitted using two lifetimes, the fitting results being collated in tables 1-5. For two different lifetimes, the short lifetime is generally considered to be surface recombination, while the long lifetime represents the bulk recombination process. The fluorescence lifetime increases with increasing deposition temperature, especially with increasing long lifetime values and specific gravities, indicating that the defect state density decreases with increasing temperature.
FIG. 6 is a structure of the perovskite photoelectric device of the above examples 1 to 5, using silicon substrate interdigital electrodes, the electrode material being gold, on which perovskite thin film is deposited. Photoelectric response tests show that the device deposited under the condition of 750 ℃ has stronger photoelectric response, and the on-off ratio can reach 2.5 multiplied by 104Moreover, the performance does not degrade over multiple cycles, indicating good stability and repeatability.
Table 1 fluorescence decay data in example 1
500℃ τ1 τ2 τm
A 0.64ns(72.4％) 7.17ns(27.6％) 2.44ns
B 0.48ns(73.3％) 6.40ns(26.7％) 2.06ns
C 0.36ns(79.8％) 6.20ns(20.2％) 1.54ns
Table 2 fluorescence decay data in example 2
600℃ τ1 τ2 τm
A 2.34ns(46.3％) 16.53ns(53.7％) 9.96ns
B 1.24ns(83.0％) 24.51ns(17.0％) 5.19ns
C 0.59ns(83.4％) 4.32ns(16.6％) 1.21ns
Table 3 fluorescence decay data in example 3
700℃ τ1 τ2 τm
A 5.55ns(36.8％) 26.26ns(63.2％) 18.63ns
B 2.72ns(56.8％) 19.47ns(43.2％) 9.95ns
C 0.96ns(86.9％) 20.38ns(13.1％) 3.50ns
Table 4 fluorescence decay data in example 4
750℃ τ1 τ2 τm
A 10.44ns(35.5％) 36.52ns(64.5％) 27.25ns
B 3.26ns(48.3％) 26.46ns(51.7％) 15.26ns
C 3.04ns(76.5％) 12.40ns(23.5％) 5.24ns
Table 5 fluorescence decay data in example 5
800℃ τ1 τ2 τm
A 0.42ns(54.8％) 1.61ns(45.2％) 0.96ns
B 0.38ns(81.7％) 1.58ns(18.3％) 0.60ns
C 0.09ns(88.5％) 0.35ns(11.5％) 0.12ns
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (7)

1. The preparation method of the phase-change controllable all-inorganic perovskite thin film is characterized by comprising the following specific steps of:
(1) respectively placing precursor lead bromide and cesium bromide in a vapor deposition device, placing a substrate in a deposition area, and vacuumizing the whole device;
(2) introducing inert gas into the vapor deposition device;
(3) setting deposition temperature and deposition time, wherein the deposition temperature is selected from 500-800 ℃, and the perovskite thin film has different components and crystal forms at different deposition temperatures;
wherein, under the condition of heating time of 60min and holding time of 40min, when the deposition temperature is 500 ℃, the obtained perovskite is substantially CsPb2Br5Phase (1); when the deposition temperature is 600 ℃ and 700 ℃, the obtained perovskite is CsPb2Br5-CsPbBr3Biphasic structure and CsPbBr with increasing temperature3Increasing phases; when the deposition temperature is 750 ℃, the obtained perovskite is substantially CsPbBr3Phase (1); when the substrate temperature is 800 ℃, the perovskite thin film is degraded.
2. The method according to claim 1, wherein in the step (1), a vacuum is applied to 100Pa, and the process is repeated 3 times to remove excess oxygen and water vapor.
3. The production method according to claim 1, wherein in the step (1), the substrate material is silicon.
4. The production method according to claim 1, wherein in the step (2), the inert gas is argon gas, and a flow rate is 80 sccm.
5. The method according to claim 1, wherein the heating procedure in the step (3) is: heating from room temperature to set temperature for 60min, maintaining for 40min, stopping heating, and cooling to room temperature.
6. A method of fabricating a perovskite optoelectronic device, wherein the device comprises a substrate and a perovskite thin film, wherein the substrate is an interdigital electrode, and the perovskite thin film is fabricated by the fabrication method as set forth in any one of claims 1 to 5.
7. The method of fabricating a perovskite optoelectronic device as claimed in claim 6 wherein the interdigitated electrode is a silicon substrate and the electrode material is gold.
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CN114540771B (en) * 2022-03-04 2022-12-20 浙江大学 Pure inorganic lead halide perovskite absorption layer and preparation method and application thereof

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