CN109355638A - A kind of full-inorganic perovskite thin film preparation method and device application that phase transformation is controllable - Google Patents
A kind of full-inorganic perovskite thin film preparation method and device application that phase transformation is controllable Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 230000009466 transformation Effects 0.000 title claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 34
- 239000012071 phase Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000012808 vapor phase Substances 0.000 claims abstract description 10
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims abstract description 7
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 claims abstract description 7
- 239000004615 ingredient Substances 0.000 claims abstract description 6
- 230000008021 deposition Effects 0.000 claims abstract description 5
- 239000011261 inert gas Substances 0.000 claims abstract description 5
- 239000002243 precursor Substances 0.000 claims abstract description 5
- 238000004062 sedimentation Methods 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000007772 electrode material Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 230000014759 maintenance of location Effects 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 16
- 230000008569 process Effects 0.000 abstract description 12
- 239000010408 film Substances 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 6
- 230000005693 optoelectronics Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000005137 deposition process Methods 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 229910052792 caesium Inorganic materials 0.000 description 3
- 238000009396 hybridization Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000701 chemical imaging Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001857 fluorescence decay curve Methods 0.000 description 1
- 238000002189 fluorescence spectrum Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005297 material degradation process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
The invention belongs to photoelectric functional material technology field more particularly to a kind of full-inorganic perovskite thin film preparation methods and device application that phase transformation is controllable.The described method includes: precursor lead bromide and cesium bromide are respectively placed in vapor phase growing apparatus by (1), substrate is placed in crystallizing field, and vacuumize to whole device；(2) inert gas is passed through into vapor phase growing apparatus；(3) depositing temperature and sedimentation time are set, depositing temperature is under 500-800 DEG C, different deposition temperatures, ingredient and the crystal form difference of perovskite thin film.The present invention uses chemical vapor deposition method, and process conditions are simple, is easy to accurately control, and is suitble to industrialization production, while uniformity of film is good, with substrate material adhesion, spreadability is good, and the optoelectronic film of preparation has broad application prospects.The present invention realizes Perovskite Phase from CsPb by changing depositing temperature2Br5To CsPbBr3Controllable growth.Photodetector based on the perovskite thin film preparation that the present invention obtains, shows good photoelectric respone and switching characteristic.
Description
Technical field
The invention belongs to photoelectric functional material technology field more particularly to a kind of full-inorganic perovskite thin films that phase transformation is controllable
Preparation method and device application.
Background technique
In recent years, for organic inorganic hybridization perovskite because of its wide-spectrum absorption, characteristic electron is adjustable, the spies such as carrier mobility height
Point makes it have biggish application prospect in solar battery, light emitting diode and detector field.However, mutually separation and light
Induction halogen segregation phenomenon largely hinders the development of organic inorganic hybridization perovskite material.And use metal ion
It is to solve the extraordinary scheme of perovskite thermal instability that (such as caesium, rubidium etc.), which replaces organic ion,.Therefore, a variety of to be based on solution
Method for the controllable full-inorganic perovskite crystal of growth morphology, the perovskite device based on the preparation of this crystal shows excellent
Performance.However for large scale perovskite device industry application, solwution method will be by film thickness deficiency and phase transition institute
Limitation, that is to say, that full-inorganic perovskite is usually all to be prepared by solution methods, however solwution method is in large area, high surface
It faces the challenge in covering, the preparation of big thickness thin film.
Chemical vapor deposition can be used for preparing the electric thin of high quality, and it is thin to be also used for organic inorganic hybridization perovskite
Film, it is prepared by full-inorganic perovskite thin film it is less, by research depositing temperature for membrane structure, pattern and optical characteristics compared with
It is few.In order to adapt to opto-electronic device fast development needs, the controllable full-inorganic perovskite material of research and development phase transformation is particularly significant.
Summary of the invention
In view of the above technical problems existing in the prior art, the side chemical vapor deposition (CVD) is utilized the present invention relates to a kind of
Method is prepared for the controllable full-inorganic perovskite thin film of phase transformation.The present invention utilizes chemical vapour deposition technique, by adjusting depositing temperature
The ingredient and crystal form for controlling perovskite thin film, prepare high-quality full-inorganic perovskite thin film.
The technical solution adopted by the present invention is as described below.
The present invention provides a kind of full-inorganic perovskite thin film preparation method that phase transformation is controllable, and the specific steps of the method are such as
Under:
(1) precursor lead bromide and cesium bromide are respectively placed in vapor phase growing apparatus, substrate are placed in crystallizing field, and right
Whole device vacuumizes；
(2) inert gas is passed through into vapor phase growing apparatus；
(3) depositing temperature and sedimentation time are set, depositing temperature is under 500-800 DEG C, different deposition temperatures, perovskite
The ingredient of film and crystal form difference.
In above-mentioned steps (1), it is evacuated to 100Pa, and be repeated 3 times, to remove extra oxygen and vapor；Substrate material
Material is silicon.
In above-mentioned steps (2), inert gas is argon gas, flow 80sccm.
Heating schedule in above-mentioned steps (3) are as follows: be heated to the temperature-time set as 60min, when then keeping from room temperature
Between be 40min, stop heating, be cooled to room temperature.
Determined through overtesting, when heated between 60min, in the case where retention time 40min, when depositing temperature is 500 DEG C
When, obtained perovskite is essentially CsPb2Br5Phase；When depositing temperature is 600 DEG C, 700 DEG C, obtained perovskite is
CsPb2Br5-CsPbBr3Double structure, and as temperature increases CsPbBr3Mutually increase；When depositing temperature is 750 DEG C, obtain
Perovskite be essentially CsPbBr3Phase；It is when underlayer temperature is 800 DEG C, perovskite thin film degradation.
The present invention before the deposition, by precursor cesium bromide (CsBr) and lead bromide (PbBr2) separated, then pass through
The perovskite thin film of different-shape, crystallization, defect state is finally formed on the substrate in the change of depositing temperature.The present invention can be real
The preparation of existing out of phase full-inorganic perovskite thin film, improves perovskite crystalline quality, reduces defect state density.
Since the different melting points of precursor material are larger, when preparing film using chemical vapor deposition, it is suitable heavy to choose
Accumulated temperature degree is growth high quality perovskite thin film, realizes the key of perovskite crystalline phase controllable growth.During primary depositing
Both a determining depositing temperature can have been set, ingredient and the uniform perovskite thin film of crystalline structure are obtained, it can also be in difference
The different depositing temperature of phase sets obtains layered distribution, the perovskite thin film of ingredient and crystalline structure variation.
The present invention also provides a kind of perovskite photoelectric device preparation method, the device includes substrate and perovskite thin film,
The substrate is interdigital electrode, the perovskite thin film full-inorganic perovskite thin film preparation method system controllable by above-mentioned phase transformation
It is standby.
The interdigital electrode is silicon substrate, and electrode material is gold.
The inorganic perovskite thin film of the method for the present invention preparation has following excellent results compared with other techniques:
(1) chemical vapor deposition method is used, process conditions are simple, are easy to accurately control, and are suitble to industrialization production, simultaneously
Uniformity of film is good, and with substrate material adhesion, spreadability is good, and the optoelectronic film of preparation has broad application prospects；
(2) changed by depositing temperature, realize Perovskite Phase from CsPb2Br5To CsPbBr3Controllable growth；
(3) as depositing temperature changes, crystallization property, shape characteristic and the optical physics of the perovskite thin film of preparation are special
Property corresponding variation all occurs, and as temperature increases (500-750 DEG C), perovskite crystallite dimension is gradually increased, while defect
The density of states gradually decreases, and film crystalline quality improves；
(4) photodetector based on perovskite thin film preparation, shows good photoelectric respone and switching characteristic；
(5) for other kinds of perovskite thin film (ABX3) material, it also can use this method and deposited, this method
With universality.
Detailed description of the invention
Fig. 1 is that chemical vapor deposition prepares perovskite thin film schematic diagram in the embodiment of the present invention；
Fig. 2 is the X-ray diffraction spectrum of perovskite thin film in the embodiment of the present invention；
Fig. 3 is the appearance structure and distribution diagram of element of perovskite thin film in the embodiment of the present invention；
Fig. 4 is perovskite thin film fluorescence spectrum and fluorescent image in the embodiment of the present invention；
Fig. 5 is the imaging of perovskite thin film time resolution fluorescence spectral and fluorescence decay curve in the embodiment of the present invention；
Fig. 6 is that perovskite thin film optoelectronic device structure and performance are based in the embodiment of the present invention.
Specific embodiment
In order to illustrate more clearly of technical solution of the present invention, it is illustrated below in conjunction with specific embodiments and the drawings,
It should be evident that the embodiment in being described below is only some embodiments of the present invention, those of ordinary skill in the art are come
It says, without creative efforts, other examples can also be obtained according to these embodiments.
Embodiment 1
The gaseous phase deposition device and use chemical vapor deposition used in the present embodiment prepares the principle of perovskite thin film such as
Shown in Fig. 1.Chemical vapor deposition (CVD) device is all made of in embodiment, reactant is cesium bromide and lead bromide, and purity all exists
99% or more, carrier gas is argon gas, and for purity 99% or more, substrate material selects silicon, p-type, (100) crystal face.It was prepared in device
Cheng Zhong, using interdigital electrode as substrate, electrode material is gold.It is commercially available product.
CsPb is grown with CVD technology2Br5Perovskite thin film material:
1. reactant cesium bromide and lead bromide are individually positioned in CVD system, substrate is placed on crystallizing field, is conducive to gas
Phase substance reaction simultaneously deposits；
2. starting mechanical pump, it is evacuated to 100Pa, repeatedly for three times；
3. opening heating schedule, setting temperature is 500 DEG C, then heating time 60min is kept at such a temperature
40min；
4. being passed through argon gas while heating, the flow set of gas is 80sccm；
5. reaction terminates, it is cooled to room temperature.
Such as Fig. 2 a it is found that the perovskite prepared under the conditions of 500 DEG C is CsPb2Br5Phase.As (depositing temperature of a is Fig. 3
500 DEG C, the depositing temperature of b is 600 DEG C, and the depositing temperature of c is 700 DEG C, and the depositing temperature of d and e are 750 DEG C, the depositing temperature of f
It is 800 DEG C) it is found that the surface of perovskite is uneven, particle size is smaller, is imaged and is found using energy disperse spectroscopy, Cs, Pb, Br is thin
Film surface is evenly distributed, and its ratio be 11:23:57, with CsPb2Br5In stoichiometric ratio it is closely similar, this and X-ray diffraction
Test result matches.
Above-mentioned perovskite thin film is deposited on silicon substrate interdigital electrode, electrode material is gold, perovskite photoelectric device is obtained,
And be tested for the property, as shown in Figure 6.
Embodiment 2
The vapor phase growing apparatus and raw material of the present embodiment are same as Example 1.
CsPb is grown with CVD technology2Br5-CsPbBr3Phase perovskite thin-film material
Preparation step and process conditions are as described in Example 1, except that:
Process conditions: growth temperature is 600 DEG C, is heated to 600 DEG C of times from room temperature as 60min, reacts at such a temperature
Time is 40min, and the flow of carrier gas is 80sccm.
As shown in Figure 2 b, the perovskite prepared under the conditions of 600 DEG C is CsPb2Br5-CsPbBr3Double structure, i.e. calcium titanium
Start CsPbBr occur in mine3Phase.As known to Fig. 3 b, perovskite thin film surface is more uniform, and particle size increases
Above-mentioned perovskite thin film is deposited on silicon substrate interdigital electrode, electrode material is gold, perovskite photoelectric device is obtained,
And be tested for the property, as shown in Figure 6.
Embodiment 3:
The vapor phase growing apparatus and raw material of the present embodiment are same as Example 1.
CsPb2Br5-CsPbBr3 phase perovskite thin-film material is grown with CVD technology
Preparation step and process conditions are as described in Example 1, except that:
Process conditions: growth temperature is 700 DEG C, is heated to 700 DEG C of times from room temperature as 60min, reacts at such a temperature
Time is 40min, and the flow of carrier gas is 80sccm.
As shown in Figure 2 c, the perovskite prepared under the conditions of 700 DEG C is CsPb2Br5-CsPbBr3Double structure, CsPbBr3
Compared to significantly increasing again.Such as Fig. 3 c it is found that perovskite thin film surface particles size is larger.
Above-mentioned perovskite thin film is deposited on silicon substrate interdigital electrode, electrode material is gold, perovskite photoelectric device is obtained,
And be tested for the property, as shown in Figure 6.
Embodiment 4:
The vapor phase growing apparatus and raw material of the present embodiment are same as Example 1.
CsPbBr is grown with CVD technology3Phase perovskite thin film material
Preparation step and process conditions are as described in Example 1, except that:
Process conditions: growth temperature is 750 DEG C, is heated to 750 DEG C of times from room temperature as 60min, reacts at such a temperature
Time is 40min, and the flow of carrier gas is 80sccm.
As shown in Figure 2 d, the perovskite prepared under the conditions of 750 DEG C is CsPbBr3Phase structure.If Fig. 3 d-e is it is found that calcium
The particle of titanium ore film is based on spherical shape, and energy disperse spectroscopy imaging test finds Cs, and Pb, Br ratio is 16:17:48, with CsPbBr3In
Stoichiometric ratio it is closely similar, this matches with X-ray diffraction test result.
Above-mentioned perovskite thin film is deposited on silicon substrate interdigital electrode, electrode material is gold, perovskite photoelectric device is obtained,
And be tested for the property, as shown in Figure 6.
Embodiment 5:
The vapor phase growing apparatus and raw material of the present embodiment are same as Example 1.
High temperature makes perovskite thin film material degradation
Preparation step and process conditions are as described in Example 1, except that:
Process conditions: growth temperature is 800 DEG C, is heated to 800 DEG C of times from room temperature as 60min, reacts at such a temperature
Time is 40min, and the flow of carrier gas is 80sccm.
As shown in Figure 2 e, the perovskite thin film degradation prepared under the conditions of 800 DEG C.If Fig. 3 f is it is found that perovskite becomes layer
Shape structure.
Above-mentioned perovskite thin film is deposited on silicon substrate interdigital electrode, electrode material is gold, perovskite photoelectric device is obtained,
And be tested for the property, as shown in Figure 6.
Fig. 4 is the photoluminescence spectrum of the perovskite thin film of above-described embodiment 1-5, and luminous peak position concentrates on 530-540nm, is
Typical green light.Red shift occurs as the temperature rises for luminous peak position, while halfwidth narrows, this also reflects perovskite knot
Structure defect is reduced.
Fig. 5 be the perovskite thin film of above-described embodiment 1-5 time resolution fluorescence spectral imaging (depositing temperature of a be 500
DEG C, the depositing temperature of b is 600 DEG C, and the depositing temperature of c is 700 DEG C, and the depositing temperature of d is 750 DEG C, and the depositing temperature of e is 800
DEG C), which can distinguish the light excitation power process of different location, avoid the part averagely covered by overall spectrum
Information.Fluorescence decay spectral line is extracted from image different location, is fitted using two service life, fitting result is organized in
In table 1-5.For two different service life, short life is typically considered surface recombination, and the long-life indicates bluk recombination process.It is glimmering
The light service life increases as depositing temperature increases, and especially long-life value and specific gravity increases, and shows defect state density with temperature
Increase and reduces.
Fig. 6 is the structure of the perovskite photoelectric device of above-described embodiment 1-5, and used is silicon substrate interdigital electrode, electricity
Pole material is gold, and perovskite thin film is deposited on electrode material.The device that photoelectric respone test deposits under the conditions of showing 750 DEG C
With stronger photoelectric respone, Simultaneous Switching ratio can achieve 2.5 × 104, and in multiple circulation, performance can't drop
It is low, illustrate with good stability and repeatable.
Fluorescence decay data in 1 embodiment 1 of table
| 500℃ | τ1 | τ2 | τm |
| A | 0.64ns (72.4%) | 7.17ns (27.6%) | 2.44ns |
| B | 0.48ns (73.3%) | 6.40ns (26.7%) | 2.06ns |
| C | 0.36ns (79.8%) | 6.20ns (20.2%) | 1.54ns |
Fluorescence decay data in 2 embodiment 2 of table
| 600℃ | τ1 | τ2 | τm |
| A | 2.34ns (46.3%) | 16.53ns (53.7%) | 9.96ns |
| B | 1.24ns (83.0%) | 24.51ns (17.0%) | 5.19ns |
| C | 0.59ns (83.4%) | 4.32ns (16.6%) | 1.21ns |
Fluorescence decay data in 3 embodiment 3 of table
| 700℃ | τ1 | τ2 | τm |
| A | 5.55ns (36.8%) | 26.26ns (63.2%) | 18.63ns |
| B | 2.72ns (56.8%) | 19.47ns (43.2%) | 9.95ns |
| C | 0.96ns (86.9%) | 20.38ns (13.1%) | 3.50ns |
Fluorescence decay data in 4 embodiment 4 of table
| 750℃ | τ1 | τ2 | τm |
| A | 10.44ns (35.5%) | 36.52ns (64.5%) | 27.25ns |
| B | 3.26ns (48.3%) | 26.46ns (51.7%) | 15.26ns |
| C | 3.04ns (76.5%) | 12.40ns (23.5%) | 5.24ns |
Fluorescence decay data in 5 embodiment 5 of table
| 800℃ | τ1 | τ2 | τm |
| A | 0.42ns (54.8%) | 1.61ns (45.2%) | 0.96ns |
| B | 0.38ns (81.7%) | 1.58ns (18.3%) | 0.60ns |
| C | 0.09ns (88.5%) | 0.35ns (11.5%) | 0.12ns |
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (7)
1. a kind of full-inorganic perovskite thin film preparation method that phase transformation is controllable, which is characterized in that the specific steps of the method are such as
Under:
(1) precursor lead bromide and cesium bromide are respectively placed in vapor phase growing apparatus, substrate are placed in crystallizing field, and to entire
Device vacuumizes；
(2) inert gas is passed through into vapor phase growing apparatus；
(3) depositing temperature and sedimentation time are set, depositing temperature is under 500-800 DEG C, different deposition temperatures, perovskite thin film
Ingredient and crystal form it is different.
2. preparation method according to claim 1, which is characterized in that in the step (1), be evacuated to 100Pa, lay equal stress on
It is 3 times multiple, to remove extra oxygen and vapor.
3. preparation method according to claim 1, which is characterized in that in the step (1), the substrate material is silicon.
4. preparation method according to claim 1, which is characterized in that in the step (2), inert gas is argon gas, stream
Amount is 80sccm.
5. preparation method according to claim 1, which is characterized in that heating schedule in the step (3) are as follows: from room temperature plus
Heat is to the temperature-time set as 60min, and then the retention time is 40min, stops heating, is cooled to room temperature.
6. a kind of perovskite photoelectric device preparation method, which is characterized in that the device includes substrate and perovskite thin film, described
Substrate is interdigital electrode, and the perovskite thin film is prepared by the preparation method as described in any one of claim 1-5.
7. perovskite photoelectric device preparation method according to claim 6, which is characterized in that the interdigital electrode is silicon lining
Bottom, electrode material are gold.
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