CN113025973A - Al-Cu sputtering target material and preparation method thereof - Google Patents
Al-Cu sputtering target material and preparation method thereof Download PDFInfo
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- CN113025973A CN113025973A CN202110237906.5A CN202110237906A CN113025973A CN 113025973 A CN113025973 A CN 113025973A CN 202110237906 A CN202110237906 A CN 202110237906A CN 113025973 A CN113025973 A CN 113025973A
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 98
- 239000013077 target material Substances 0.000 title claims abstract description 31
- 229910018182 Al—Cu Inorganic materials 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 230000002093 peripheral effect Effects 0.000 claims abstract description 25
- 238000003754 machining Methods 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 238000005520 cutting process Methods 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 11
- 239000002904 solvent Substances 0.000 claims description 9
- 239000002173 cutting fluid Substances 0.000 claims description 7
- 239000004215 Carbon black (E152) Substances 0.000 claims description 6
- 229930195733 hydrocarbon Natural products 0.000 claims description 6
- 150000002430 hydrocarbons Chemical class 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 5
- 230000002159 abnormal effect Effects 0.000 abstract description 18
- 239000002245 particle Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000010730 cutting oil Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000007514 turning Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B5/00—Turning-machines or devices specially adapted for particular work; Accessories specially adapted therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q11/00—Accessories fitted to machine tools for keeping tools or parts of the machine in good working condition or for cooling work; Safety devices specially combined with or arranged in, or specially adapted for use in connection with, machine tools
- B23Q11/10—Arrangements for cooling or lubricating tools or work
- B23Q11/1038—Arrangements for cooling or lubricating tools or work using cutting liquids with special characteristics, e.g. flow rate, quality
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
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Abstract
The application relates to the field of materials, in particular to an Al-Cu sputtering target material and a preparation method thereof. The purity of the sputtering target material is more than 99.999%; the roughness Ra of the sputtering target is less than or equal to 0.4 μm, and the difference between the roughness Ra of the outer periphery of the sputtering target and the roughness Ra of the center of the sputtering target is within +/-40%. The difference in roughness between the outer peripheral portion and the central portion is small; abnormal discharge caused by particles or unevenness on the surface of the target can be effectively suppressed.
Description
Technical Field
The application relates to the field of materials, in particular to an Al-Cu sputtering target material and a preparation method thereof.
Background
The sputtering process is a process of bombarding the surface of a solid with particles (ions or neutral atoms, molecules) with certain energy, so that the atoms or molecules near the surface of the solid obtain enough energy to finally escape from the surface of the solid. Sputtering targets have high requirements on surface roughness, resistance, grain size uniformity, composition and structure uniformity, foreign matter (oxide) content and size, magnetic permeability, ultra-high density, ultra-fine grains, and the like.
The target material in the prior art often generates abnormal discharge of different degrees in the sputtering process.
Disclosure of Invention
An object of the embodiments of the present application is to provide an Al-Cu sputtering target and a method for manufacturing the same, which can suppress abnormal discharge.
The application provides an Al-Cu sputtering target material in a first aspect.
The purity of the sputtering target material is more than 99.999%;
the roughness Ra of the sputtering target is less than or equal to 0.4 μm, and the difference between the roughness Ra of the outer periphery of the sputtering target and the roughness Ra of the center of the sputtering target is within +/-40%.
In some embodiments of the present application, the outer peripheral portion ranges from an outermost periphery of the sputtering target to 15mm inward, and the central portion ranges from a center of the sputtering target to 15mm outward.
In some embodiments of the present application, a roughness Rz of a sputtering target is ≦ 3.2 μm, and a difference between the roughness Rz of the outer peripheral portion of the sputtering target and the roughness Rz of the central portion of the sputtering target is within ± 40%.
In some embodiments of the present application, a roughness Ra of a sputtering target is ≦ 0.2 μm, and a difference between the roughness Ra of the outer peripheral portion of the sputtering target and the roughness Ra of the central portion of the sputtering target is within ± 20%.
In some embodiments of the present application, the sputter target is a circular target.
The application also provides a preparation method of the Al-Cu sputtering target material, which comprises the following steps:
and (4) processing by adopting a lathe to obtain the sputtering target material.
In some embodiments of the present application, the cutting fluid is a hydrocarbon solvent or 93 vol% or more ethanol during the lathe machining process.
In some embodiments of the present application, during the machining process of obtaining the sputtering target by using the lathe machining, an inert gas is introduced to the surface of the sputtering target.
In some embodiments of the present application, the lathing conditions are as follows:
the rotation speed is 500rpm-1500rpm, the feeding speed is 0.01mm/min-0.1mm/min, and the cutting feed is 0.01mm-0.05 mm.
In some embodiments of the present application, the lathing conditions are as follows:
the contact angle between the cutter and the processing surface is more than 45 degrees.
The Al-Cu sputtering target and the preparation method thereof provided by the embodiment of the application have at least the following beneficial effects;
the Al-Cu sputtering target has a purity of more than 99.999%, and can be machined to obtain a sputtering target having a difference between the outer peripheral part roughness Ra and the central part roughness Ra of within + -40%, and the difference between the outer peripheral part roughness and the central part roughness is small, so that abnormal discharge caused by particles or irregularities on the surface of the target can be effectively suppressed. As the sputtering time increases, the area of the sputtering target surface to be sputtered gradually expands, and abnormal discharge of the rough portion will continue for a long time. In order to prevent this, a target having a rough and uniform surface is required. The sputtering target surface provided by the embodiment of the application can prevent the phenomenon.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a schematic cross-sectional view of a sputtering target according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions of the embodiments of the present application will be clearly and completely described below. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
In the description of the embodiments of the present application, it is to be understood that the terms "above", "below", "inside" and "within" are inclusive; the range of "numerical value a to numerical value b" includes both values "a" and "b", and "unit of measure" in "numerical value a to numerical value b + unit of measure" represents both "unit of measure" of "numerical value a" and "numerical value b".
The following specifically describes an Al — Cu sputtering target and a method for manufacturing the same in the embodiments of the present application.
An Al-Cu sputtering target material, wherein the purity of the sputtering target material is more than 99.999%;
the roughness Ra of the sputtering target is less than or equal to 0.4 μm, and the difference between the roughness Ra of the outer periphery of the sputtering target and the roughness Ra of the center of the sputtering target is within +/-40%.
In the present application, the purity of the Al — Cu sputtering target is 99.999% or more, in other words, in the present application, the mass percentage of the substance other than Al and Cu in the Al — Cu sputtering target in the target is 0.001% or less.
The roughness Ra of the sputtering target is less than or equal to 0.4 μm, and for example, the roughness Ra of the sputtering target is 0.1 μm, 0.15 μm, 0.2 μm, 0.23 μm, 0.25 μm, 0.29 μm, 0.3 μm, 0.4 μm, or the like. Further, the roughness of the sputtering target also satisfies the following conditions:
the difference between the roughness Ra of the outer peripheral part and the roughness Ra of the central part is within +/-40 percent; in some embodiments, the outer peripheral portion ranges from an outermost periphery of the sputtering target to 15mm inward, and the central portion ranges from a center of the sputtering target to 15mm outward.
Fig. 1 is a schematic cross-sectional view of a sputtering target according to an embodiment of the present application, and referring to fig. 1, in fig. 1, a central circular shaded portion represents a central portion, and an outer circular shaded portion represents an outer peripheral portion. In fig. 1, there is also a partial region between the central portion and the outer peripheral portion, and it should be noted that, in some embodiments of the present application, the area of the region between the central portion and the outer peripheral portion may be zero, or the area of the region may be determined according to the size of the actual sputtering target, and the size of the region between the central portion and the outer peripheral portion is not limited in the present application.
The difference between the roughness Ra of the outer peripheral part and the roughness Ra of the central part is within +/-40 percent; for example, the difference may be-40%, -35%, -30%, -25%, -20%, -10%, -6%, 0, 10%, 18%, 21%, 28%, 30%, 36%, or 40%, etc.
When the surface of the sputtering target is rough and uneven, the area of the sputtering target surface to be sputtered gradually expands with the increase of the sputtering time, and abnormal discharge of the rough portion continues for a long time. In order to prevent the problem, the sputtering target provided by the embodiment of the application satisfies that the roughness Ra is less than or equal to 0.4 μm, the difference between the roughness Ra of the outer peripheral part and the roughness Ra of the central part is within +/-40%, the surface of the target is smooth, the structure is uniform, and the abnormal discharge problem can be effectively inhibited.
In some embodiments of the present application, a roughness Ra of a sputtering target is ≦ 0.2 μm, and a difference between the roughness Ra of the outer peripheral portion of the sputtering target and the roughness Ra of the central portion of the sputtering target is within ± 20%.
In some embodiments of the present application, the roughness Rz ≦ 3.2 μm for the sputtering target, e.g., the roughness Rz of the sputtering target is 0.5 μm, 0.8 μm, 1.3 μm, 1.9 μm, 2.2 μm, 2.8 μm, 3.0 μm, 3.2 μm, and the like. The difference between the roughness Rz of the outer peripheral portion and the roughness Rz of the central portion is within ± 40%; for example, the difference may be-40%, -32%, -30%, -24%, -20%, -18%, -8%, 0, 11%, 14%, 20%, 27%, 32%, 38%, or 40%, etc.
The sputtering target provided by the embodiment of the application has at least the following advantages:
the sputtering target has uniform structure, improves the fineness and the uniformity of the structure, and improves the stability in the film forming process. The difference in the height of the surface particles is small, and the difference in the roughness between the central portion and the outer peripheral portion is small, so that abnormal discharge of the sputtering target material during sputtering can be effectively suppressed.
The application also provides a preparation method of the Al-Cu sputtering target, which mainly comprises ingot casting, forging, hot rolling or cold rolling, stretching, heat treatment (heat treatment comprises homogenization and re-sintering), machining, combination with a back plate, detection, packaging, transportation and the like. Wherein, the mechanical processing mainly comprises cutting, milling, turning, grinding and the like.
In the application, a hydrocarbon solvent or ethanol with the volume fraction of more than 93 percent is used as a cutting fluid to process the sputtering target material in the cutting process. In some embodiments, the cutting fluid is 93 vol% or more ethanol, and the concentration of the ethanol solution may be, for example, 93.2 vol%, 94 vol%, 95 vol%, 97 vol%, 99 vol%, 99.5 vol%, or the like. The hydrocarbon solvent may be, for example, aromatic hydrocarbon, alkane, or other solvents.
The cutting fluid used for machining can uniformly form a high-quality oxide film on the machined surface of the target by using a hydrocarbon solvent or an ethanol solution with the concentration of 93 vol% or more, and has the effect of inhibiting abnormal discharge in the sputtering process. If the concentration of the solvent is too small, oxidation and corrosion are rapidly caused during cutting, and it is difficult to control the uniformity of the oxide film, which in turn causes abnormal discharge. In addition, when a water-soluble cutting oil is used, since partial oxidation and corrosion are rapidly generated after surface processing, uniformity control is difficult, and the water-soluble cutting oil cannot be removed in subsequent processes, which causes abnormal discharge in sputtering.
In some embodiments of the present application, during the cutting process, an inert gas is introduced to the cutting surface of the sputtering target, for example, the inert gas may be nitrogen, argon, or the like, and the inert gas is introduced while the above solvent is used as the cutting fluid, so that a thin uniform oxide film can be formed on the surface of the target, and abnormal discharge can be effectively suppressed.
As an example, in the present application, the conditions for lathe machining are as follows:
the rotation speed is 500rpm-1500rpm, the feeding speed is 0.01mm/min-0.1mm/min, and the cutting feed is 0.01mm-0.05 mm. The roughness of the target surface can be reduced by this processing condition.
Illustratively, the number of revolutions during the lathe machining may be 500rpm, 600rpm, 700rpm, 800rpm, 1000rpm, 1200rpm, 1500rpm, or the like.
The feed rate may be 0.01mm/min, 0.03mm/min, 0.06mm/min, 0.07mm/min, or 0.1mm/min, among others.
The bite can be 0.01mm, 0.02mm, 0.04mm, or 0.05mm, and the like.
Further, in some embodiments of the present application, the contact angle of the tool with the machining surface is 45 ° or more. For example, the contact angle of the tool with the machined surface is 45.2 °, 46 °, 48 °, 50 °, and so on.
By way of example, in the embodiments of the present application, an NC processing machine is used, and the tool is made of diamond, and processing is performed at the same peripheral speed. The aluminum and aluminum alloy target material is a very soft material, abnormal discharge can be caused by surface abrasion or foreign matter mixing and the like when cutting or grinding is carried out, a sharp cutter is required for cutting, and the cutter made of diamond can effectively avoid the problem.
The surface of the sputtering target material is uniform by improving the processing technological parameters of the lathe, the particles and the concave-convex on the surface of the target material are reduced, and the roughness of the peripheral part and the central part is relatively uniform.
The preparation method of the sputtering target provided by the embodiment of the application has the following advantages:
the target material is machined by using a hydrocarbon solvent or an ethanol water solution with the volume percent of more than 93% as a cutting fluid, and the sputtering target material with the difference between the roughness Ra of the outer peripheral part and the roughness Ra of the central part within +/-40% is obtained after lathe machining, the roughness difference between the outer peripheral part and the central part is small, the surface of the sputtering target material is provided with a uniform oxide film, and abnormal discharge caused by particles on the surface of the target material can be effectively inhibited.
Example 1
The embodiment provides an Al-Cu sputtering target material which is mainly prepared by the following steps:
and mounting the target material on a main shaft of a lathe, and processing the target material by adopting a turning tool to obtain the sputtering target material. During the machining, the number of revolutions of the cutter was 500rpm, the feed rate was 0.08mm/min, and the bite was 0.03 mm. And (3) spraying 93 vol% ethanol onto the joint of the cutter head and the target through a water pump attached to the machine tool.
Roughness values Ra and Rz of the Al — Cu sputtering target provided in example 1 were measured.
Example 2 to example 3
Referring to example 1, examples 2 and 3 are different from example 1 in the rotation speed and the like in the cutting process, and the specific parameters are detailed in table 1.
Comparative example 1
Referring to example 1, comparative example 1 is different from example 1 in rotation speed and the like during cutting, and specific parameters are detailed in table 1.
The Al — Cu sputtering targets provided in examples 1 to 3 and comparative example 1 were placed on a sputtering apparatus to perform a discharge test, and the number of abnormal discharges within 1h was measured, and the measurement results are shown in table 1.
TABLE 1
In table 1, the outer peripheral portion is a range from the outermost periphery to a portion 15mm inward of the sputtering target; the center part is the range of the sputtering target material 15mm outwards from the center.
As can be seen from table 1: the number of abnormal discharges in 1 hour of the target provided in examples 1 to 3 is smaller than or equal to 2, and the number of abnormal discharges in 1 hour of the target provided in comparative example 1 is much larger than that in the examples, which shows that the target provided in the examples of the present application can effectively suppress abnormal discharges.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. An Al-Cu sputtering target material is characterized in that,
the purity of the sputtering target material is more than 99.999%;
the roughness Ra of the sputtering target is less than or equal to 0.4 μm, and the difference between the roughness Ra of the outer periphery of the sputtering target and the roughness Ra of the center of the sputtering target is within +/-40%.
2. The Al-Cu sputtering target according to claim 1,
the outer peripheral portion is a range from the outermost periphery of the sputtering target to a position 15mm inward, and the central portion is a range from the center of the sputtering target to a position 15mm outward.
3. The Al-Cu sputtering target according to claim 1, wherein a roughness Rz of the sputtering target is ≦ 3.2 μm, and a difference between a roughness Rz of an outer peripheral portion of the sputtering target and a roughness Rz of a central portion of the sputtering target is within ± 40%.
4. The Al-Cu sputtering target according to claim 1,
the roughness Ra of the sputtering target is less than or equal to 0.2 μm, and the difference between the roughness Ra of the outer peripheral part of the sputtering target and the roughness Ra of the central part of the sputtering target is within +/-20%.
5. The sputtering target according to any one of claims 1 to 3,
the sputtering target is a circular target.
6. The method for preparing an Al-Cu sputtering target according to any one of claims 1 to 5, comprising:
and (4) processing by adopting a lathe to obtain the sputtering target material.
7. The method for preparing a sputtering target according to claim 6,
the cutting fluid is hydrocarbon solvent or ethanol with the volume percent of 93% or more in the lathe machining process.
8. The method for preparing a sputtering target according to claim 6,
and in the machining process of obtaining the sputtering target material by adopting lathe machining, introducing inert gas on the surface of the sputtering target material.
9. The method for preparing an Al-Cu sputtering target according to any one of claims 6 to 8, wherein the conditions for the lathe machining are as follows:
the rotation speed is 500rpm-1500rpm, the feeding speed is 0.01mm/min-0.1mm/min, and the cutting feed is 0.01mm-0.05 mm.
10. The method for preparing an Al-Cu sputtering target according to any one of claims 6 to 8, wherein the conditions for the lathe machining are as follows:
the contact angle between the cutter and the processing surface is more than 45 degrees.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102102183A (en) * | 2009-12-18 | 2011-06-22 | 株式会社神户制钢所 | Al-based alloy sputtering target |
| JP2016183406A (en) * | 2015-03-25 | 2016-10-20 | Ｊｘ金属株式会社 | Copper alloy sputtering target and method for evaluating the same |
| CN106133163A (en) * | 2014-03-24 | 2016-11-16 | 肯联铝业机床杰钦有限公司 | There is after being suitable for turning and anodic oxidation the 6XXX alloy extruded product of low roughness |
| JP6397592B1 (en) * | 2017-10-02 | 2018-09-26 | 住友化学株式会社 | Sputtering target manufacturing method and sputtering target |
| CN111889768A (en) * | 2020-08-03 | 2020-11-06 | 合肥江丰电子材料有限公司 | Processing method for reducing surface roughness of target |
-
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- 2021-03-03 CN CN202110237906.5A patent/CN113025973A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102102183A (en) * | 2009-12-18 | 2011-06-22 | 株式会社神户制钢所 | Al-based alloy sputtering target |
| CN106133163A (en) * | 2014-03-24 | 2016-11-16 | 肯联铝业机床杰钦有限公司 | There is after being suitable for turning and anodic oxidation the 6XXX alloy extruded product of low roughness |
| JP2016183406A (en) * | 2015-03-25 | 2016-10-20 | Ｊｘ金属株式会社 | Copper alloy sputtering target and method for evaluating the same |
| JP6397592B1 (en) * | 2017-10-02 | 2018-09-26 | 住友化学株式会社 | Sputtering target manufacturing method and sputtering target |
| CN109952389A (en) * | 2017-10-02 | 2019-06-28 | 住友化学株式会社 | The manufacturing method and sputtering target of sputtering target |
| CN111889768A (en) * | 2020-08-03 | 2020-11-06 | 合肥江丰电子材料有限公司 | Processing method for reducing surface roughness of target |
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Application publication date: 20210625 |