CN113024128A - Tin disulfide-C3N4Nano-sheet array photo-anode and preparation method thereof - Google Patents

Tin disulfide-C3N4Nano-sheet array photo-anode and preparation method thereof Download PDF

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CN113024128A
CN113024128A CN202110344316.2A CN202110344316A CN113024128A CN 113024128 A CN113024128 A CN 113024128A CN 202110344316 A CN202110344316 A CN 202110344316A CN 113024128 A CN113024128 A CN 113024128A
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tin disulfide
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tin
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CN113024128B (en
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吕慧丹
王子良
刘勇平
庄杨
陈丹杨
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Guilin University of Technology
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    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
    • C03C17/3464—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a chalcogenide
    • C03C17/347—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a chalcogenide comprising a sulfide or oxysulfide
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    • C—CHEMISTRY; METALLURGY
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Abstract

The invention provides a tin disulfide-C3N4The preparation method of the nanosheet array photoanode comprises the following steps: (1) placing sulfur powder as a sulfur source and tin tetrachloride pentahydrate as a tin source in a double-temperature-zone tubular furnace, and preparing a tin disulfide nanosheet array by chemical vapor deposition; (2) sintering at high temperature to obtain light yellow C3N4Then ultrasonically stripping C in a mixed solution of water and isopropanol3N4After the completion of the stripping, the supernatant was collected by centrifugation to obtain C3N4An ultra-thin nanosheet colloidal solution; (3) soaking tin disulfide nanosheet array in C3N4Drying the ultrathin nanosheet colloidal solution for different times, and sintering in a tubular furnace under the argon atmosphere to obtain tin disulfide-C3N4And (3) a nanosheet array photoanode. Tin disulfide-C prepared by the method of the invention3N4The nano-sheet array photo-anode material has higher conductivity, and simultaneously has obvious stability and photoelectrocatalysis performanceAnd (5) obviously improving.

Description

Tin disulfide-C3N4Nano-sheet array photo-anode and preparation method thereof
Technical Field
The invention belongs to the technical field of photoelectrocatalysis, and particularly relates to tin disulfide-C3N4Nanosheet array photoanode and tin disulfide-C3N4A preparation method of a nano-sheet array photo-anode.
Background
With the development of society, people face the problems of continuous consumption of fossil energy (petroleum, coal, natural gas and the like) and increasingly serious environmental pollution, so that the development of renewable energy (solar energy, hydrogen energy, water energy, tidal energy, wind energy, biomass energy and the like) arouses great interest. The clean characteristic of solar energy can radically change the problem of environmental pollution caused by fossil energy consumption, so that the photoelectrochemical water decomposition has wide prospect in the aspect of converting the solar energy into clean chemical fuel such as hydrogen and the like.
As one of Transition Metal Dichalcogenides (TMDS), tin disulfide has attracted much attention because of its advantages of being inexpensive, non-toxic, and environmentally friendly, wherein the large surface area of two-dimensional tin disulfide increases the interface contact area, thus promoting the rapid transfer of interface charges and electrochemical reactions, but the photoelectrocatalytic water decomposition performance and stability of tin disulfide still cannot achieve ideal effects. The formation of a heterojunction is an effective method for improving photocatalytic performance. C3N4The active material is matched with a tin disulfide energy band and combined to prepare a heterojunction photo-anode, so that the activity of photoelectrocatalysis can be improved. The morphology has a large influence on the performance of the heterojunction, and the nanosheet has a large specific surface area and is beneficial to improving the photocatalytic activity. Based on the technical scheme, the invention provides tin disulfide-C with high photoelectric catalytic activity3N4A nanoplatelet photoanode material.
Disclosure of Invention
The first purpose of the invention is to provide tin disulfide-C3N4The preparation method of the nanosheet array photoanode solves the problems of low catalytic activity and poor stability of the existing photoelectric catalyst tin disulfide.
The second purpose of the invention is to provide tin disulfide-C prepared by the method3N4Nanosheet arrayAnd a photo-anode.
The first purpose of the invention is realized by the following technical scheme:
tin disulfide-C3N4The preparation method of the nanosheet array photoanode comprises the following steps:
(1) placing sulfur powder as a sulfur source, tin tetrachloride pentahydrate as a tin source and conductive glass (FTO) as a substrate in a double-temperature-zone tubular furnace, and preparing a tin disulfide nanosheet array by chemical vapor deposition in an environment of introducing argon and hydrogen mixed gas;
(2) urea filled in a crucible is taken as a precursor, and is sintered at high temperature in a muffle furnace to obtain light yellow C3N4(ii) a Then preparing C3N4Ultrasonically stripping in a mixed solution of water and isopropanol, centrifuging and collecting supernatant to obtain C3N4An ultra-thin nanosheet colloidal solution;
(3) soaking tin disulfide nanosheet array in C3N4Sintering the ultrathin nanosheet colloidal solution in a tubular furnace at different times under the argon atmosphere to obtain tin disulfide-C3N4And (3) a nanosheet array photoanode.
The method prepares the tin disulfide nanosheet array on FTO by a chemical vapor deposition method, and then adopts a solution stripping method to obtain C3N4Ultra-thin nanosheets prepared by soaking tin disulfide nanosheet array in C3N4In the ultrathin nanosheet solution, finally sintering to obtain the tin disulfide-C3N4And (3) a nanosheet array photoanode. Tin disulfide-C prepared by the method of the invention3N4The nano-sheet array photo-anode material has higher conductivity, and meanwhile, the stability and the photoelectric catalytic performance are also obviously improved.
The preparation method of the invention can be further improved as follows:
in the step (1), the mass ratio of the sulfur powder to the tin tetrachloride pentahydrate is 0.4-1: 0.2-0.5.
In the step (1), the tin disulfide nanosheet array is prepared in a dual-temperature-zone tube furnace by using FTO as a substrate, and the specific operation is as follows: the burning boat containing sulfur powder is placed in the upstream central heating area, the reaction temperature is 200-400 ℃, the burning boat containing tin tetrachloride pentahydrate is placed in the downstream central heating area, and the reaction temperature is 300-500 ℃.
Further, 2 FTO substrates are obliquely placed side by side at a position 8cm away from the right end of the burning boat in the downstream central heating area.
Further, the two temperature zones are heated up to the set temperature for 45min at the same time, and the temperature is kept for 10-30 min.
Further, argon is introduced in the temperature rising process, the gas flow is 80s.c.c.m, the argon flow is reduced to 60s.c.c.m in the heat preservation process, and hydrogen is introduced, and the gas flow is 20 s.c.c.m; and (5) closing a hydrogen gas path after the heat preservation time is over, changing the flow of the argon gas to 80s.c.c.m again, and taking out the sample after the temperature of the isopipe furnace is reduced to the room temperature to obtain the tin disulfide nanosheet.
And (2) carrying out ultrasonic cleaning in acetone, deionized water and ethanol before the FTO is used in the step (1), wherein the ultrasonic cleaning time is 30min each time.
In the step (1), the argon gas has a purity of 99.99 percent, and the hydrogen gas has a purity of 99.99 percent.
The volume ratio of water to propanol in step (2) is 2: 1.
Further, C3N4The mass-to-volume ratio of the mixed solution with water and propanol is 6:1 (mg/mL).
The step (3) is specifically operated as follows: array of tin disulfide nanosheets obtained in (1) in C3N4Soaking the ultrathin nanosheet colloid solution for 2-5h, continuously stirring in the soaking process, and then sintering in a tubular furnace filled with argon at 350-550 ℃ for 1-3h, wherein the argon flow in the sintering process is 80 s.c.c.m.
The second purpose of the invention is realized by the following technical scheme:
tin disulfide-C3N4The nanosheet array photoanode is prepared by the method.
Compared with the prior art, the invention has the following beneficial effects:
(1) tin disulfide-C of the invention3N4The preparation method of the nanosheet array photoanode obtains the tin disulfide-C on the FTO substrate3N4The nano-sheet array photo-anode material has good conductivity, high photoelectrocatalysis activity and obviously improved stability at 0.5mol/LNa2SO4Photocurrent density in solution and at 1.23V (vs. Ag/AgCl) was 8.7mA cm-2And simultaneously shows better stability in a time current curve test.
(2) The preparation method is simple, low in cost and easy to control reaction conditions. Provides a good method for preparing the photo-anode material with high photoelectric catalytic activity, and is beneficial to the progress and development of the photoelectric catalytic decomposition technology.
Drawings
FIG. 1 shows tin disulfide-C obtained in example 2 of the present invention3N4An XRD spectrum of the nano-sheet array photo-anode material.
FIG. 2 shows tin disulfide-C obtained in example 2 of the present invention3N4SEM image of nano-sheet array photo-anode material.
FIG. 3 shows tin disulfide-C obtained in example 2 of the present invention3N4EDS spectrogram of the nano-sheet array photo-anode.
FIG. 4 shows tin disulfide-C obtained in examples 1 to 3 of the present invention3N4LSV curve diagram of photoelectrocatalysis performance of the nanosheet array photoanode.
FIG. 5 shows tin disulfide-C obtained in examples 1 to 3 of the present invention3N4Time-current (i-t) curve diagram of nano-sheet array photoanode.
Detailed Description
The present invention is further described below in conjunction with specific examples to better understand and implement the technical solutions of the present invention for those skilled in the art.
Example 1
Tin disulfide-C3N4The preparation method of the nanosheet array photoanode comprises the following steps:
(1) and (3) respectively ultrasonically treating FTO (1cm multiplied by 2.5cm) in acetone, alcohol and ethanol solution for 30min to remove surface pollutants, and drying for later use. In a double-temperature-zone tube furnace, a burning boat containing 0.68g of sulfur powder is placed in an upstream central heating zone, the reaction temperature is 250 ℃, a burning boat containing 0.34g of tin tetrachloride pentahydrate is placed in a downstream central heating zone, the reaction temperature is 450 ℃, and 2 FTO substrates are obliquely placed side by side at a position 8cm away from the right end of the burning boat in the downstream central heating zone. The two temperature zones are heated up to the set temperature for 45min at the same time, and the temperature is kept for 17 min. Argon is introduced in the temperature rising process, the gas flow is 80s.c.c.m, the argon flow is reduced to 60s.c.c.m in the heat preservation process, and hydrogen is introduced, and the gas flow is 20 s.c.c.m. And (5) closing a hydrogen gas path after the heat preservation time is over, changing the flow of the argon gas to 80s.c.c.m again, and taking out the sample after the temperature of the isopipe furnace is reduced to the room temperature to obtain the tin disulfide nanosheet.
(2) Preparing light yellow C by adopting a sintering method3N4Get 90mgC3N4And putting into a brown glass bottle with a cover. Sequentially adding 10ml of deionized water and 5ml of isopropanol, stirring uniformly and then carrying out ultrasonic treatment for 24 h. Centrifuging the obtained solution in a centrifuge at 3000r/min for 10min, and collecting supernatant to obtain C3N4And (3) an ultrathin nanosheet colloidal solution.
(3) Take 15mlC3N4And transferring the ultrathin nanosheet colloidal solution into a 25ml beaker, fixing the tin disulfide nanosheet on the wall of the beaker by using a clamp, stirring and soaking for 4 hours, taking out the sample, and drying the sample in an oven at 60 ℃ for 3 hours. And then transferring the sample into a tube furnace to be sintered in argon atmosphere, heating up to 350 ℃ at the heating rate of 2 ℃/min, preserving the heat for 1h, cooling to room temperature, and taking out to obtain the tin disulfide-C3N4And (3) a nanosheet array photoanode.
Example 2
Tin disulfide-C3N4The preparation method of the nanosheet array photoanode comprises the following steps:
(1) and (3) respectively ultrasonically treating FTO (1cm multiplied by 2.5cm) in acetone, alcohol and ethanol solution for 30min to remove surface pollutants, and drying for later use. In a double-temperature-zone tube furnace, a burning boat containing 0.4g of sulfur powder is placed in an upstream central heating zone, the reaction temperature is 200 ℃, a burning boat containing 0.2g of tin tetrachloride pentahydrate is placed in a downstream central heating zone, the reaction temperature is 300 ℃, and 2 FTO substrates are obliquely placed side by side at a position 8cm away from the right end of the burning boat in the downstream central heating zone. The two temperature zones are heated up to the set temperature for 45min and then are kept warm for 30 min. Argon is introduced in the temperature rising process, the gas flow is 80s.c.c.m, the argon flow is reduced to 60s.c.c.m in the heat preservation process, and hydrogen is introduced, and the gas flow is 20 s.c.c.m. And (5) closing a hydrogen gas path after the heat preservation time is over, changing the flow of the argon gas to 80s.c.c.m again, and taking out the sample after the temperature of the isopipe furnace is reduced to the room temperature to obtain the tin disulfide nanosheet.
(2) Preparing light yellow C by adopting a sintering method3N4Get 90mgC3N4And putting into a brown glass bottle with a cover. Sequentially adding 10ml of deionized water and 5ml of isopropanol, stirring uniformly and then carrying out ultrasonic treatment for 24 h. Centrifuging the obtained solution in a centrifuge at 3000r/min for 10min, and collecting supernatant to obtain C3N4And (3) an ultrathin nanosheet colloidal solution.
(3) Take 15mlC3N4And transferring the ultrathin nanosheet colloidal solution into a 25ml beaker, fixing the tin disulfide nanosheet on the wall of the beaker by using a clamp, stirring and soaking for 2 hours, taking out the sample, and drying the sample in an oven at 60 ℃ for 3 hours. And then transferring the sample into a tube furnace to be sintered in argon atmosphere at the heating rate of 2 ℃/min, heating to 400 ℃, keeping the temperature for 2h, cooling to room temperature, and taking out to obtain the tin disulfide-C3N4And (3) a nanosheet array photoanode.
Example 3
Tin disulfide-C3N4The preparation method of the nanosheet array photoanode comprises the following steps:
(1) and (3) respectively ultrasonically treating FTO (1cm multiplied by 2.5cm) in acetone, alcohol and ethanol solution for 30min to remove surface pollutants, and drying for later use. In a double-temperature-zone tube furnace, a burning boat containing 1.0g of sulfur powder is placed in an upstream central heating zone, the reaction temperature is 400 ℃, a burning boat containing 0.5g of tin tetrachloride pentahydrate is placed in a downstream central heating zone, the reaction temperature is 500 ℃, and 2 FTO substrates are obliquely placed side by side at a position 8cm away from the right end of the burning boat in the downstream central heating zone. The two temperature zones are heated up to the set temperature for 45min and then are kept warm for 10 min. Argon is introduced in the temperature rising process, the gas flow is 80s.c.c.m, the argon flow is reduced to 60s.c.c.m in the heat preservation process, and hydrogen is introduced, and the gas flow is 20 s.c.c.m. And (5) closing a hydrogen gas path after the heat preservation time is over, changing the flow of the argon gas to 80s.c.c.m again, and taking out the sample after the temperature of the isopipe furnace is reduced to the room temperature to obtain the tin disulfide nanosheet.
(2) Preparing light yellow C by adopting a sintering method3N4Get 90mgC3N4And putting into a brown glass bottle with a cover. Sequentially adding 10ml of deionized water and 5ml of isopropanol, stirring uniformly and then carrying out ultrasonic treatment for 24 h. Centrifuging the obtained solution in a centrifuge at 3000r/min for 10min, and collecting supernatant to obtain C3N4And (3) an ultrathin nanosheet colloidal solution.
(3) Take 15mlC3N4And transferring the ultrathin nanosheet colloidal solution into a 25ml beaker, fixing the tin disulfide nanosheet on the wall of the beaker by using a clamp, stirring and soaking for 5 hours, taking out the sample, and drying the sample in an oven at 60 ℃ for 3 hours. And then transferring the sample into a tube furnace to be sintered in argon atmosphere, heating up to 550 ℃, keeping the temperature for 3h, cooling to room temperature, and taking out to obtain the tin disulfide-C3N4And (3) a nanosheet array photoanode.
Example 4
(1) And (3) respectively ultrasonically treating FTO (1cm multiplied by 2.5cm) in acetone, alcohol and ethanol solution for 30min to remove surface pollutants, and drying for later use. In a double-temperature-zone tube furnace, a burning boat containing 0.8g of sulfur powder is placed in an upstream central heating zone, the reaction temperature is 300 ℃, a burning boat containing 0.25g of tin tetrachloride pentahydrate is placed in a downstream central heating zone, the reaction temperature is 400 ℃, and 2 FTO substrates are obliquely placed side by side at a position 8cm away from the right end of the burning boat in the downstream central heating zone. The two temperature zones are heated up to the set temperature for 45min at the same time, and the temperature is kept for 20 min. Argon is introduced in the temperature rising process, the gas flow is 80s.c.c.m, the argon flow is reduced to 60s.c.c.m in the heat preservation process, and hydrogen is introduced, and the gas flow is 20 s.c.c.m. And (5) closing a hydrogen gas path after the heat preservation time is over, changing the flow of the argon gas to 80s.c.c.m again, and taking out the sample after the temperature of the isopipe furnace is reduced to the room temperature to obtain the tin disulfide nanosheet.
(2) Preparing light yellow C by adopting a sintering method3N4Get 90mgC3N4And putting into a brown glass bottle with a cover. Adding 10ml of the mixture in turn for separationMixing the water with 5ml of isopropanol, stirring uniformly, and then carrying out ultrasonic treatment for 24 h. Centrifuging the obtained solution in a centrifuge at 3000r/min for 10min, and collecting supernatant to obtain C3N4And (3) an ultrathin nanosheet colloidal solution.
(3) Take 15mlC3N4And transferring the ultrathin nanosheet colloidal solution into a 25ml beaker, fixing the tin disulfide nanosheet on the wall of the beaker by using a clamp, stirring and soaking for 3 hours, taking out the sample, and drying the sample in an oven at 60 ℃ for 3 hours. And then transferring the sample into a tube furnace to be sintered in argon atmosphere, heating up to 450 ℃ at the heating rate of 2 ℃/min, preserving the heat for 1h, cooling to room temperature, and taking out to obtain the tin disulfide-C3N4And (3) a nanosheet array photoanode.
Photoelectrochemical property test: tin disulfide-C prepared in the example is directly mixed3N4The nanosheet array material is used as a working electrode (the test area is 1 cm)2) The platinum sheet electrode is an auxiliary electrode, and the Ag/AgCl electrode is a reference electrode. 0.5mol/LNa at room temperature2SO4And carrying out photoelectrochemical performance test in the electrolyte.
As shown in fig. 1, an XRD pattern of the photoanode material prepared in example 2 is shown. For tin disulfide-C3N4Nanosheet array photoanode due to SnS2Nanosheet surface-supported C3N4The content is less, and the figure shows that C is caused3N4Characteristic peak of (A) and SnS2The characteristic peak positions of the nano-sheets are coincident, so that further tin disulfide-C is needed3N4And carrying out structural characterization on the nanosheet array photoanode. In addition, the major diffraction peaks of tin disulfide appear at 2 θ ═ 14.92 °,28.12 °,32.05 °,41.78 °,49.86 ° and 52.36 °, and match well with standard card (JCPDS No. 23-0677).
As shown in fig. 2, is an SEM image of the photoanode material prepared in example 2. From the figure, C can be clearly seen3N4Presence of nanosheets, C prepared by ultrasonic exfoliation3N4The volume of the nano-sheet is far less than that of SnS2Nanosheets, some C3N4Loaded in SnS2SnS on nanosheet surface, even in partial region2Nanosheet quilt C3N4Complete coverage indicates that the two are well bonded, which reduces interfacial transport resistance and facilitates electron transport.
As shown in fig. 3, which is an EDS spectrum of the photo-anode material prepared in example 2, it can be seen that the material only contains four elements, i.e., C, N, S, and Sn, and no other impurities are introduced.
As shown in fig. 4, which is a plot of LSV of the photoanode materials prepared in examples 1-3. It can be seen from the figure that as the soaking time increases, the tin disulfide surface is loaded with C3N4The content also gradually increases, tin disulfide-C3N4The photoelectrocatalysis performance of the nanosheet array photoanode shows a trend that the photoelectrocatalysis performance is firstly improved and then gradually reduced, and meanwhile, the stannic disulfide nanosheet has the most excellent photoelectrocatalysis performance when the soaking time of the stannic disulfide nanosheet in the supernatant is 8 hours.
As shown in FIG. 5, a time-current (i-t) graph is shown for the photoanode materials prepared in examples 1-3. It can be seen from the figure that C has the same regularity as in figure 4, while loading with the surface of the tin disulphide3N4Increase in the content of tin disulfide-C compared with tin disulfide3N4The stability of the nano-sheet array photoanode also shows a trend of gradually increasing and then gradually decreasing.
The above embodiments illustrate various embodiments of the present invention in detail, but the embodiments of the present invention are not limited thereto, and those skilled in the art can achieve the objectives of the present invention based on the disclosure of the present invention, and any modifications and variations based on the concept of the present invention fall within the scope of the present invention, which is defined by the claims.

Claims (10)

1. Tin disulfide-C3N4The preparation method of the nano-sheet array photo-anode is characterized by comprising the following steps:
(1) placing sulfur powder as a sulfur source, tin tetrachloride pentahydrate as a tin source and conductive glass (FTO) as a substrate in a double-temperature-zone tubular furnace, and preparing a tin disulfide nanosheet array by chemical vapor deposition in an environment of introducing argon and hydrogen mixed gas;
(2) urea filled in a crucible is taken as a precursor, and is sintered at high temperature in a muffle furnace to obtain light yellow C3N4(ii) a Then preparing C3N4Ultrasonically stripping in a mixed solution of water and isopropanol, centrifuging and collecting supernatant to obtain C3N4An ultra-thin nanosheet colloidal solution;
(3) soaking tin disulfide nanosheet array in C3N4Drying the ultrathin nanosheet colloidal solution for different times, and sintering in a tubular furnace under the argon atmosphere to obtain tin disulfide-C3N4And (3) a nanosheet array photoanode.
2. Tin disulfide-C according to claim 13N4The preparation method of the nanosheet array photoanode is characterized in that the mass ratio of the sulfur powder to the tin tetrachloride pentahydrate in the step (1) is 0.4-1: 0.2-0.5.
3. Tin disulfide-C according to claim 13N4The preparation method of the nano-sheet array photo-anode is characterized in that in the step (1), the tin disulfide nano-sheet array is prepared in a dual-temperature-zone tube furnace by taking FTO as a substrate, and the specific operation is as follows: the burning boat containing sulfur powder is placed in the upstream central heating area, the reaction temperature is 200-400 ℃, the burning boat containing tin tetrachloride pentahydrate is placed in the downstream central heating area, and the reaction temperature is 300-500 ℃.
4. Tin disulfide-C according to claim 33N4The preparation method of the nano-sheet array photo-anode is characterized in that 2 FTO substrate rows are obliquely arranged at a position 8cm away from the right end of a downstream central heating zone burning boat.
5. Tin disulfide-C according to claim 33N4The preparation method of the nano-sheet array photo-anode is characterized in that two temperature zones are heated to a set temperature for 45min at the same time, and the temperature is kept for 10-30 min.
6. Tin disulfide-C according to claim 33N4The preparation method of the nano-sheet array photo-anode is characterized in that argon is introduced in the temperature rising process, the gas flow is 80s.c.c.m, the argon flow is reduced to 60s.c.c.m in the heat preservation process, and hydrogen is introduced, and the gas flow is 20 s.c.m. And (5) closing a hydrogen gas path after the heat preservation time is over, changing the flow of the argon gas to 80s.c.c.m again, and taking out the sample after the temperature of the isopipe furnace is reduced to the room temperature to obtain the tin disulfide nanosheet.
7. Tin disulfide-C according to claims 1 to 63N4The preparation method of the nano-sheet array photoanode is characterized in that ultrasonic cleaning is carried out in acetone, deionized water and ethanol before FTO is used in the step (1), and the ultrasonic cleaning time is 30min each time; in the step (1), the argon gas has a purity of 99.99 percent, and the hydrogen gas has a purity of 99.99 percent.
8. Tin disulfide-C according to claim 73N4The preparation method of the nano-sheet array photo-anode is characterized in that the volume ratio of water to propanol in the step (2) is 2: 1; c3N4The mass volume ratio of the mixed solution of the water and the propyl alcohol is 6: 1.
9. Tin disulfide-C according to claim 13N4The preparation method of the nanosheet array photoanode comprises the following specific operations in step (3): and (2) soaking the tin disulfide nanosheet array obtained in the step (1) in an ultrathin nanosheet colloidal solution for 2-5h, continuously stirring in the soaking process, and then sintering in a tubular furnace filled with argon at the temperature of 350-550 ℃ for 1-3h, wherein the argon flow in the sintering process is 80 s.c.c.m.
10. Tin disulfide-C3N4A nanosheet array photoanode, characterized in that it is produced by the method of any one of claims 1 to 9.
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