CN113023660B - Single-board double-side wiring type micro-mechanical structure and preparation method thereof - Google Patents
Single-board double-side wiring type micro-mechanical structure and preparation method thereof Download PDFInfo
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- CN113023660B CN113023660B CN202110329833.2A CN202110329833A CN113023660B CN 113023660 B CN113023660 B CN 113023660B CN 202110329833 A CN202110329833 A CN 202110329833A CN 113023660 B CN113023660 B CN 113023660B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00325—Processes for packaging MEMS devices for reducing stress inside of the package structure
Abstract
The invention discloses a single-board double-side wiring type micro-mechanical structure and a preparation method thereof, wherein the micro-mechanical structure comprises a substrate unit and a device structure unit; the device structure unit comprises a device silicon wafer and wiring structures arranged on two sides of the device silicon wafer, and the wiring structures on the bottom side are provided with two electrical signal extraction modes: a device top side electric signal extraction mode or a device bottom side electric signal extraction mode; the device is characterized in that the device top side electric signal extraction mode is that electric signals are extracted from a bottom side electrode metal layer, a bottom side bonding metal layer and a device top side electric signal extraction structure to the top side of the device in sequence, and the device bottom side electric signal extraction mode is that electric signals are extracted from the bottom side electrode metal layer and the bottom side bonding metal layer to the device bottom side electric signal extraction structure in sequence. The invention not only sets up the multilayer wiring structure on both sides of the silicon chip, can reduce the stress accumulation of the deposited multilayer film to the influence of the movable structure, but also provides the signal interface of multilayer wiring of the bottom side of the two device structures.
Description
Technical Field
The invention relates to a micromechanical structure and a preparation method thereof, in particular to a single-plate double-side wiring type micromechanical structure and a preparation method thereof.
Background
In the field of integrated circuits, multilayer metal wiring has become a fundamental form of circuit miniaturization and high-density integration. Microelectromechanical systems (Micro Electro Mechanical System, MEMS) devices have also faced the need for multilayer metal wiring in recent years, including mainly various types of MEMS sensors, MEMS actuators or actuators, MEMS energy harvesters, etc. based on the law of electromagnetic induction. The existing MEMS magnetic field sensor is mainly based on Lorentz force and Faraday electromagnetic induction law: the former is that alternating current is applied to a metal coil at the top of the MEMS movable structure so as to generate Lorentz force under the action of an external magnetic field to drive the movable structure to resonate, and therefore the magnitude of the magnetic field is estimated by detecting the displacement of the resonant structure; the latter is to make the movable structure in resonance state by a certain micro-structure driving mode such as electrostatic driving, and the metal coil on the top of the movable structure cuts magnetic force lines under the action of external magnetic field, so as to evaluate the magnitude of the magnetic field by detecting the induced electromotive force at two ends of the metal coil. The MEMS actuation or actuator based on the law of electromagnetic induction utilizes the principle similar to the Lorentz force type MEMS magnetic sensor to realize the driving and executing of the MEMS movable structure, and the MEMS energy collector based on the law of electromagnetic induction utilizes the Faraday law of electromagnetic induction, namely, the movable structure is provided with a metal coil which cuts magnetic lines of force of a magnetic field to generate electric potential under the vibration environment to realize the conversion and storage of magnetic field energy to electric field energy.
The various MEMS sensors, MEMS actuators or actuators, MEMS energy collectors, etc. based on the law of electromagnetic induction all require the deposition of metal coils on the MEMS movable structure as basic components for achieving a wide range of functions such as sensing, execution, energy collection and conversion. In addition, according to the law of electromagnetic induction, the lorentz force or induced electromotive force generated by the metal coil linearly increases with the number of turns of the coil. Therefore, the increase of the number of layers of the metal coil provides a direct optimization idea for improving the performance of the electromagnetic induction type MEMS device.
However, in the prior art, multilayer metal wiring can be realized only on the top side of the movable structure, which wastes the bottom area of the movable structure when in motion so that the performance of the electromagnetic induction type MEMS device is limited, and on the other hand, the accumulation of film stress can be caused to influence the movable structure simply by increasing the number of layers of the single-side metal wiring. Therefore, how to provide a single-board double-sided multilayer wiring type micro-mechanical structure is an important issue for optimizing the performance of the electromagnetic induction type MEMS device, wherein how to perform reliable signal interface and interconnection on the multilayer metal wiring at the bottom of the movable structure is particularly critical and urgent.
Disclosure of Invention
The invention aims to overcome the problems, and provides a single-board double-side wiring type micro-mechanical structure, which not only is provided with a multi-layer wiring structure on two sides of a silicon wafer, so that the influence of stress accumulation of deposited multi-layer films on a movable structure can be reduced, but also provides signal interfaces of multi-layer wiring on the bottom sides of two device structures.
Another object of the present invention is to provide a method for manufacturing a single-board double-sided wiring type micro-mechanical structure.
The aim of the invention is achieved by the following technical scheme:
a single-board double-sided wiring type micro-mechanical structure comprises a substrate unit and a device structure unit; the substrate unit comprises a substrate slice, wherein a substrate insulating layer and a substrate bond metal layer are sequentially arranged on the substrate slice;
the device structure unit comprises a device silicon wafer and wiring structures respectively arranged at the top side and the bottom side of the device silicon wafer, wherein the wiring structure at the bottom side comprises a bottom electrode metal layer, a bottom intermetallic insulating layer and a bottom bonding metal layer; the bottom bonding metal layer and the substrate bonding metal layer are connected with each other to form a bonding structure; the bottom side bonding metal layer is electrically connected with the bottom side electrode metal layer through the bottom side metal layer electrode lead-out window;
the wiring structure positioned at the top side comprises a top side insulating layer and a top side metal layer, wherein a top side body silicon electrode lead-out window is formed in the top side insulating layer, and the top side metal layer is electrically connected with a device silicon wafer through the top side body silicon electrode lead-out window; the device silicon wafer and the top insulating layer are provided with insulating grooves surrounding the top body silicon electrode lead-out window, and two sides of the device silicon wafer positioned at the inner side of the insulating grooves are respectively and electrically communicated with the top metal layer and the bottom bonding metal layer to form an independent device top electric signal lead-out structure; the electric signals of the wiring structure positioned at the bottom side are sequentially led out to the top side of the device from the bottom electrode metal layer, the bottom bonding metal layer and the electric signal leading-out structure at the top side of the device.
According to a preferred scheme of the invention, the wiring structure at the bottom side further comprises a bottom side substrate insulating layer, a bottom side body silicon electrode leading-out window is formed in the bottom side substrate insulating layer, and the bottom side bonding metal layer is electrically connected with the device silicon chip through the bottom side body silicon electrode leading-out window.
In a preferred scheme of the invention, the wiring structures on the top side and the bottom side of the device silicon wafer are provided with a plurality of metal layers which can be single-layer, double-layer or three-layer or even more layers.
In a preferred embodiment of the present invention, the substrate sheet is provided with a substrate cavity for moving the movable structure.
A single-board double-sided wiring type micro-mechanical structure comprises a substrate unit and a device structure unit; the substrate unit comprises a substrate slice, wherein a substrate insulating layer and a substrate bond metal layer are sequentially arranged on the substrate slice;
the device structure unit comprises a device silicon wafer and wiring structures respectively arranged at the top side and the bottom side of the device silicon wafer, wherein the wiring structure at the bottom side comprises a bottom electrode metal layer, a bottom intermetallic insulating layer and a bottom bonding metal layer; the bottom bonding metal layer and the substrate bonding metal layer are connected with each other to form a bonding structure; the bottom side bonding metal layer is electrically connected with the bottom side electrode metal layer through the bottom side metal layer electrode lead-out window;
an extraction notch formed by etching the device silicon wafer is arranged above the substrate bond metal layer, and the extraction notch is etched while releasing the movable structure; the area of the substrate bonding metal layer exposed below the extraction notch forms an electric signal extraction structure at the bottom side of the device; the electric signals of the wiring structure positioned at the bottom side are sequentially led out from the bottom electrode metal layer and the bottom bonding metal layer to the electric signal leading-out structure at the bottom side of the device.
A preparation method of a single-board double-side wiring type micro-mechanical structure comprises the following steps:
(1) Preparing a substrate slice, and sequentially depositing a substrate insulating layer and a substrate bonding metal layer on the upper side of the substrate slice; etching the substrate slice to form a substrate cavity for the movable structure to move;
(2) Preparing a device silicon wafer, and depositing a bottom base insulating layer on the bottom side of the device silicon wafer; etching a bottom side body silicon electrode leading-out window on the bottom side body insulating layer;
(3) Depositing a bottom electrode metal layer, a bottom intermetallic insulating layer and a bottom bonding metal layer on the bottom side of the device silicon wafer in sequence; etching a bottom side metal layer electrode lead-out window on the bottom side metal layer after depositing the bottom side metal layer, wherein the bottom side bonding metal layer is electrically connected with the bottom side electrode metal layer through the bottom side metal layer electrode lead-out window;
the bottom bonding metal layer is electrically connected with the device silicon wafer through the bottom body silicon electrode leading-out window;
(4) Placing the prepared bonding metal layers of the device silicon wafer and the substrate slice face to face for bonding process to realize mechanical and electrical connection between the two wafers, wherein the device structure is supported by the substrate through a bonding structure formed between the bonding metal layers;
(5) Depositing a top first insulating layer on the top of the device silicon wafer; etching a top side body silicon electrode leading-out window, a top side body silicon etching window and a top side body silicon etching penetrating release window on the top side first insulating layer;
(6) Sequentially depositing a top first metal layer and a top second insulating layer on the top side of the device silicon wafer; etching a top side metal layer electrode lead-out window on the top side second insulating layer, and depositing a top side second metal layer; the top side second metal layer is electrically connected with the top side first metal layer through the top side metal layer electrode lead-out window;
the top side first metal layer is electrically connected with the device silicon wafer through the top side body silicon electrode leading-out window;
(7) Etching the device silicon wafer at the position of the top side body silicon etching window, and forming an annular insulation groove around the top side body silicon electrode leading-out window; the device silicon chip positioned at the inner side of the insulation groove is respectively and electrically communicated with the top side metal layer and the bottom side bonding metal layer to form an independent top side electric signal lead-out structure, and a device movable structure containing double-side metal multilayer wiring is released; the electric signals of the wiring structure positioned at the bottom side are sequentially led out to the top side of the device from the bottom electrode metal layer, the bottom bonding metal layer and the electric signal leading-out structure at the top side of the device.
In a preferred embodiment of the present invention, in the step (3), the operation of depositing the bottom electrode metal layer and the bottom intermetallic insulating layer on the bottom side of the device silicon wafer is:
depositing a bottom side first metal layer on the bottom side first insulating layer; depositing a bottom second insulating layer on the bottom first metal layer, and etching a first bottom metal layer electrode extraction window for electrode extraction of the bottom first metal layer on the bottom second insulating layer; depositing a bottom second metal layer on the bottom second insulating layer; and depositing a bottom third insulating layer on the bottom second metal layer, and etching a second bottom metal layer electrode extraction window for electrode extraction of the bottom second metal layer on the bottom third insulating layer.
A preparation method of a single-board double-side wiring type micro-mechanical structure comprises the following steps:
(1) Preparing a substrate slice, and sequentially depositing a substrate insulating layer and a substrate bonding metal layer on the upper side of the substrate slice; etching the substrate slice to form a substrate cavity for the movable structure to move;
(2) Preparing a device silicon wafer, and depositing a bottom base insulating layer on the bottom side of the device silicon wafer; etching a bottom side body silicon etching penetration release window on the bottom side body insulating layer;
(3) Depositing a bottom electrode metal layer, a bottom metal insulating layer and a bottom bonding metal layer on the bottom side of the device silicon wafer in sequence; etching a bottom side metal layer electrode lead-out window on the bottom side metal insulating layer after depositing the bottom side metal insulating layer, wherein the bottom side bonding metal layer is electrically connected with the bottom side electrode metal layer through the bottom side metal layer electrode lead-out window;
(4) Placing the prepared bonding metal layers of the device silicon wafer and the substrate slice face to face for bonding process to realize mechanical and electrical connection between the two wafers, wherein the device structure is supported by the substrate through a bonding structure formed between the bonding metal layers;
(5) Depositing a top first insulating layer on the top of the device silicon wafer; etching a top side body silicon etching penetration release window on the top side first insulating layer; the top side body silicon etching penetrating release windows and the bottom side body silicon etching penetrating release windows are symmetrically arranged on two sides of the device silicon wafer;
(6) Sequentially depositing a top metal layer and a top insulating layer on the top side of the device silicon wafer;
(7) Etching the device silicon wafer at the position of the top side body silicon etching penetrating release window to enable the top side body silicon etching penetrating release window to be communicated with the bottom side body silicon etching penetrating release window, releasing the device movable structure containing double-side metal multilayer wiring, and exposing a signal interface area of a substrate bonding metal layer, wherein the signal interface area of the substrate bonding metal layer forms a device bottom side electric signal lead-out structure; the electric signals of the wiring structure positioned at the bottom side are sequentially led out from the bottom electrode metal layer and the bottom bonding metal layer to the electric signal leading-out structure at the bottom side of the device.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention sets up the multilayer wiring structure on the bottom side of the device silicon chip, fully utilizes the area of the bottom of the movable structure when in movement, is favorable to strengthening the performance of the electromagnetic induction MEMS device, and can reduce the influence of stress accumulation of the deposited multilayer film on the movable structure.
2. An independent device top side electric signal extraction structure is constructed by electrically connecting the device bottom side bonding metal layer and the substrate bonding metal layer and arranging an insulation groove around the top side body silicon electrode extraction window, so that an electric signal of a bottom side device is extracted to the device top side.
Drawings
Fig. 1 is a cross-sectional view of a single-board double-sided wiring type micro-mechanical structure in the present invention, wherein a device top side electrical signal extraction structure and a device bottom side electrical signal extraction structure are simultaneously arranged.
Fig. 2 to 14 are sectional views showing a process for manufacturing a single-plate double-sided wiring type micro-mechanical structure according to the present invention, in which fig. 2 is a sectional view showing a process of depositing a substrate insulating layer and a substrate bonding metal layer on one side of a substrate sheet, fig. 3 is a sectional view showing a process of performing photolithography etching on the substrate sheet, fig. 4 is a sectional view showing a process of depositing a substrate insulating layer on the bottom side of a device silicon sheet and performing photolithography etching, fig. 5 is a sectional view showing a process of depositing a first metal layer on the bottom side of a device silicon sheet and performing photolithography etching, fig. 6 is a sectional view showing a process of depositing a second insulating layer on the bottom side of a device silicon sheet and performing photolithography etching, fig. 7 is a sectional view showing a process of depositing a second metal layer on the bottom side of a device silicon sheet and performing photolithography etching, fig. 8 is a cross-sectional view of depositing and etching a bottom third insulating layer on the bottom side of a device silicon wafer, fig. 9 is a cross-sectional view of depositing and etching a bottom bonding metal layer on the bottom side of a device silicon wafer, fig. 10 is a cross-sectional view of an alignment bonding process of a device silicon wafer and a substrate wafer, fig. 11 is a cross-sectional view of depositing and etching a top first insulating layer on the top side of a device silicon wafer, fig. 12 is a cross-sectional view of depositing and etching a top first metal layer on the top side of a device silicon wafer, fig. 13 is a cross-sectional view of depositing and etching a top second insulating layer on the top side of a device silicon wafer, and fig. 14 is a cross-sectional view of depositing and etching a top second metal layer on the top side of a device silicon wafer 23.
Fig. 15 is a cross-sectional view of a single-board double-sided wiring type micro-mechanical structure of the present invention, in which only a top-side electrical signal extraction structure is provided, and the movable structure is etched and released while the top-side electrical signal extraction structure is formed.
Fig. 16 is a cross-sectional view of a single-board double-sided wiring type micro-mechanical structure of the present invention, in which only a bottom side electrical signal extraction structure is provided, and the movable structure is etched and released while the bottom side electrical signal extraction structure is formed. The reference numerals in the drawings are respectively:
Detailed Description
In order that those skilled in the art will well understand the technical solutions of the present invention, the following describes the present invention further with reference to examples and drawings, but the embodiments of the present invention are not limited thereto.
Example 1
Referring to fig. 1, the single-board double-sided wiring type micro-mechanical structure in the present embodiment includes a substrate unit and a device structure unit; the substrate unit comprises a substrate slice 11, a substrate insulating layer 12 and a substrate bonding metal layer 13 are sequentially arranged on the substrate slice 11, and a substrate cavity for moving the movable structure 231 is formed in the substrate slice 11.
Referring to fig. 1, the device structure unit includes a device silicon wafer 23 and wiring structures respectively disposed on top and bottom sides of the device silicon wafer 23, wherein the wiring structures on the bottom side include a bottom side base insulating layer 22, a bottom side electrode metal layer, a bottom side intermetallic insulating layer, and a bottom side bonding metal layer 21; specifically, the bottom electrode metal layer and the bottom inter-metal insulating layer are both provided with two layers, and the bottom electrode metal layer and the bottom inter-metal insulating layer are mutually staggered; the bottom inter-metal insulating layer covers the bottom electrode metal layer. The bottom bonding metal layer 21 and the substrate bonding metal layer 13 are connected with each other to form a bonding structure; at the bonding position, a bottom side body silicon electrode lead-out window 221 is formed on the bottom side base insulating layer 22, and the bottom side bonding metal layer 21 is electrically connected with the device silicon wafer 23 through the bottom side body silicon electrode lead-out window 221; the bottom side intermetallic insulating layer is provided with an electrode leading-out window, and the bottom side bonding metal layer 21 is electrically connected with the bottom side electrode metal layer through the electrode leading-out window. Specifically, the wiring structure in the present embodiment may be a single layer, a double layer, or a triple layer, or even more layers.
Referring to fig. 1, the wiring structure on the top side includes a top insulating layer and a top metal layer, wherein a top side body silicon electrode extraction window 241 is formed on the top insulating layer, and the top metal layer is electrically connected with the device silicon wafer 23 through the top side body silicon electrode extraction window 241; the device silicon wafer 23 and the top insulating layer are provided with insulating grooves surrounding the periphery of the top body silicon electrode lead-out window 241, and two sides of the device silicon wafer 23 positioned at the inner side of the insulating grooves are respectively and electrically communicated with the top metal layer and the bottom bonding metal layer 21 to form an independent top electric signal lead-out structure.
Further, an extraction notch formed by etching the device silicon wafer 23 is arranged above the substrate bond metal layer 13, and the extraction notch is etched while releasing the movable structure 231; wherein the area of the substrate bond metal layer 13 exposed under the extraction notch constitutes a bottom side electrical signal extraction structure. In this way, the motor signal can be led out from the substrate side besides the top side, namely the invention provides two signal interface modes of the multilayer wiring on the bottom side of the device structure, so as to solve the difficult problem of the prior art that the signal interface of the multilayer wiring on the bottom side of the device structure is difficult.
Referring to fig. 1 to 14, the method for manufacturing a single-board double-sided wiring type micro-mechanical structure (simultaneously manufacturing two electrode signal extraction structures) in this embodiment includes the following steps:
(1) A substrate sheet 11 is prepared, and a substrate insulating layer 12 and a substrate bond metal layer 13 are deposited on one side of the substrate sheet 11, followed by photolithographic etching to pattern the substrate bond metal layer 13, as shown in fig. 2.
(2) Further photolithography and etching are performed on the substrate 11, patterning of the insulating layer 12 is performed by dry etching or wet etching, and then the substrate 11 is etched by dry etching or wet etching to form a substrate cavity 111, which is provided for the device movable structure 231 to move in a space as shown in fig. 3.
(3) Preparing a device silicon wafer 23, depositing a bottom substrate insulating layer 22 on the bottom side of the device silicon wafer 23, performing photoetching corrosion, and etching the insulating layer 22 to form an insulating layer window for a bottom bulk silicon electrode lead-out window 221 and a bottom bulk silicon etching penetration release window 222 of the device silicon wafer 23, as shown in fig. 4.
(4) A bottom first metal layer 251' is deposited on the bottom side of the device silicon wafer 23, etched by photolithography, and patterned by metal etching, as shown in fig. 5.
(5) A bottom second insulating layer 27 is deposited on the bottom side of the device silicon wafer 23, and the insulating layer 27 is etched by photolithography to form an insulating layer window for the electrode lead-out window 271 of the bottom first metal layer 251', as shown in fig. 6.
(6) A bottom second metal layer 252' is deposited on the bottom side of the device silicon wafer 23, etched by photolithography, and patterned by metal etching, as shown in fig. 7.
(7) A third insulating layer 28 is deposited on the bottom side of the device silicon wafer 23, and the insulating layer 28 is etched by photolithography to form insulating layer windows, which are a first electrode lead-out window 281 on the bottom side of the device and a first electrode lead-out window 282 on the bottom side of the device, wherein the first electrode lead-out window 281 on the bottom side of the device is used for leading out electrodes of the second metal layer 252' on the bottom side, and the second electrode lead-out window 282 on the bottom side of the device is used for leading out electrodes of the first metal layer 251' on the bottom side and the second metal layer 252' on the bottom side, as shown in fig. 8.
(8) The bottom bonding metal layer 21 (or as bottom interconnection metal) is deposited on the bottom side of the device silicon wafer 23, and is subjected to photolithography and etching, and patterning of the bonding metal layer is achieved by a metal etching method, so that electrodes of the bottom first metal layer 251 'and the bottom second metal layer 252' are respectively led to specific areas of the bottom bulk silicon electrode lead-out window 221 of the device silicon wafer 23, as shown in fig. 9.
(9) The prepared device silicon wafer 23 and the bonding metal layer of the substrate slice 11 are subjected to an alignment bonding process face to face, and mechanical and electrical connection between the two wafers is realized under the action of a certain temperature and pressure, wherein the device structure is supported by the substrate through a bonding structure formed between the bonding metal layers, and meanwhile, an electrode of the metal layer at the bottom side of the device silicon wafer is electrically connected through the bonding metal layer to realize that an electrical signal can be guided to an electrode lead-out area 131 of the bonding metal layer at one side of the substrate slice, as shown in fig. 10.
(10) The bonded device silicon wafer 23 is thinned to a required thickness by using a wafer thinning technology, a top first insulating layer 24 is deposited on the thinned side of the device silicon wafer 23, photoetching corrosion is performed, the insulating layer 24 is etched to be patterned, and an insulating layer window is formed for the top side body silicon electrode leading-out window 241, the top side body silicon etching window 242 and the top side body silicon etching penetrating release window 243 of the device silicon wafer 23, wherein the top side body silicon etching penetrating release window 243 and the bottom side body silicon etching penetrating release window 222 are symmetrically arranged on two sides of the device silicon wafer 23, as shown in fig. 11.
(11) A topside first metal layer 251 is deposited on the topside of the device silicon wafer 23, etched by photolithography, and patterned by metal etching, as shown in fig. 12.
(12) A top second insulating layer 26 is deposited on the top side of the device silicon wafer 23, and the insulating layer 26 is etched by photolithography to form an insulating layer window for the electrode extraction window 261 of the top first metal layer 251, as shown in fig. 13.
(13) A top second metal layer 252 is deposited on the top side of the device silicon wafer 23, etched by photolithography, and patterned by metal etching, as shown in fig. 14.
(14) Etching is performed on the top side of the device silicon wafer 23 by etching the top side bulk silicon etching window 242 and the bulk silicon region exposed by the top side bulk silicon etching penetrating release window 243 on the top side of the device silicon wafer 23, wherein the release of the device movable structure 231 containing the double-sided metal multilayer wiring and the partial exposure of the substrate bond metal layer 13 (i.e. forming the substrate bond metal layer signal interface 131 region) are achieved by the bulk silicon etching corresponding to the bulk silicon etching penetrating release window 243 on the bottom side and the bulk silicon etching corresponding to the bulk silicon etching penetrating release window 222 region on the bottom side of the device silicon wafer 23, and the bulk silicon etching of the region of the top side bulk silicon etching window 242 with annular features is automatically stopped at the bottom side bulk insulating layer 22 of the device silicon wafer 23 and further forms the electrical insulation of the two parts of the device silicon wafer 23 isolated by the bulk silicon etching window 242, as shown in fig. 1.
Finally, the preparation of the single-board double-sided wiring type micro-mechanical structure (not yet packaged, and can be packaged by adopting the existing packaging structure) is completed, and the micro-mechanical structure provides signal extraction or signal interface modes of the bottom side multi-layer metal wiring of the two device silicon chips 23: the multi-layer metal wiring on the bottom side of one device silicon wafer 23 can realize the electrical signal extraction on one side of the substrate slice 11 through the electrical connection formed between the bottom side bonding metal layer 21 and the substrate side bonding metal layer 13 and the exposed signal interface 131 area of the substrate bonding metal layer released by the bulk silicon etching penetration of the device silicon wafer 23; the bottom side multi-layer metal wiring of the two device silicon wafers 23 can also realize the electrical signal extraction at the top side of the device silicon wafer 23 through the electrical connection formed between the bottom side bonding metal layer 21 and the substrate side bonding metal layer 13 and sequentially through the bottom side bulk silicon electrode extraction window 221, the local silicon body of the device silicon wafer 23 isolated by the top side bulk silicon etching window 242, the top side bulk silicon electrode extraction window 241 and the top side multi-layer metal layer 25 (containing metal layers 251 and 252).
In summary, the present embodiment provides a single-board double-sided wiring type micro-mechanical structure and a method for manufacturing the same. The structure can realize the preparation of a single-board double-side wiring type micro-mechanical structure which is difficult to realize in the prior art, and provides two signal interface schemes (respectively at one side of a substrate and one side of a device sheet) of multilayer wiring at the bottom side of a device structure so as to solve the signal interface problem that the prior art is difficult to realize the multilayer wiring at the bottom side of the device structure.
Example 2
Referring to fig. 15, only one manner of top side extraction is provided in the micromechanical structure of the present embodiment: the electric signals of the wiring structure positioned at the bottom side are sequentially led out to the top side of the device from the bottom electrode metal layer, the bottom bonding metal layer and the electric signal leading-out structure at the top side of the device.
Example 3
Referring to fig. 16, only one bottom side extraction mode is provided in the micromechanical structure of the present embodiment: the electric signals of the wiring structure positioned at the bottom side are sequentially led out from the bottom electrode metal layer and the bottom bonding metal layer to the electric signal leading-out structure at the bottom side of the device.
The foregoing is illustrative of the present invention, and is not to be construed as limiting thereof, but rather as various changes, modifications, substitutions, combinations, and simplifications which may be made without departing from the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (8)
1. A single-board double-sided wiring type micro-mechanical structure is characterized by comprising a substrate unit and a device structure unit; the substrate unit comprises a substrate slice, wherein a substrate insulating layer and a substrate bond metal layer are sequentially arranged on the substrate slice;
the device structure unit comprises a device silicon wafer and wiring structures respectively arranged at the top side and the bottom side of the device silicon wafer, wherein the wiring structure at the bottom side comprises a bottom electrode metal layer, a bottom intermetallic insulating layer and a bottom bonding metal layer; the bottom bonding metal layer and the substrate bonding metal layer are connected with each other to form a bonding structure; the bottom side bonding metal layer is electrically connected with the bottom side electrode metal layer through the bottom side metal layer electrode lead-out window;
the wiring structure positioned at the top side comprises a top side insulating layer and a top side metal layer, wherein a top side body silicon electrode lead-out window is formed in the top side insulating layer, and the top side metal layer is electrically connected with a device silicon wafer through the top side body silicon electrode lead-out window; the device silicon wafer and the top insulating layer are provided with insulating grooves surrounding the top body silicon electrode lead-out window, and two sides of the device silicon wafer positioned at the inner side of the insulating grooves are respectively and electrically communicated with the top metal layer and the bottom bonding metal layer to form an independent device top electric signal lead-out structure; the electric signals of the wiring structure positioned at the bottom side are sequentially led out to the top side of the device from the bottom electrode metal layer, the bottom bonding metal layer and the electric signal leading-out structure at the top side of the device.
2. A single-board double-sided wiring type micro-mechanical structure is characterized by comprising a substrate unit and a device structure unit; the substrate unit comprises a substrate slice, wherein a substrate insulating layer and a substrate bond metal layer are sequentially arranged on the substrate slice;
the device structure unit comprises a device silicon wafer and wiring structures respectively arranged at the top side and the bottom side of the device silicon wafer, wherein the wiring structure at the bottom side comprises a bottom electrode metal layer, a bottom intermetallic insulating layer and a bottom bonding metal layer; the bottom bonding metal layer and the substrate bonding metal layer are connected with each other to form a bonding structure; the bottom side bonding metal layer is electrically connected with the bottom side electrode metal layer through the bottom side metal layer electrode lead-out window;
an extraction notch formed by etching the device silicon wafer is arranged above the substrate bond metal layer, and the extraction notch is etched while releasing the movable structure; the area of the substrate bonding metal layer exposed below the extraction notch forms an electric signal extraction structure at the bottom side of the device; the electric signals of the wiring structure positioned at the bottom side are sequentially led out from the bottom electrode metal layer and the bottom bonding metal layer to the electric signal leading-out structure at the bottom side of the device.
3. The single-board double-sided wiring micro-mechanical structure according to claim 1 or 2, wherein the wiring structure at the bottom side further comprises a bottom side base insulating layer, a bottom side body silicon electrode extraction window is formed in the bottom side base insulating layer, and the bottom side bonding metal layer is electrically connected with the device silicon chip through the bottom side body silicon electrode extraction window.
4. The single-board double-sided wiring micro-mechanical structure according to claim 1 or 2, wherein the wiring structures on the top and bottom sides of the device silicon wafer are each provided with several metal layers.
5. The single-board double-sided wiring micro-mechanical structure according to claim 1 or 2, wherein a substrate cavity for moving the movable structure is formed on the substrate sheet.
6. The preparation method of the single-board double-side wiring type micro-mechanical structure is characterized by comprising the following steps of:
(1) Preparing a substrate slice, and sequentially depositing a substrate insulating layer and a substrate bonding metal layer on the upper side of the substrate slice; etching the substrate slice to form a substrate cavity for the movable structure to move;
(2) Preparing a device silicon wafer, and depositing a bottom base insulating layer on the bottom side of the device silicon wafer; etching a bottom side body silicon electrode leading-out window on the bottom side body insulating layer;
(3) Depositing a bottom electrode metal layer, a bottom intermetallic insulating layer and a bottom bonding metal layer on the bottom side of the device silicon wafer in sequence; etching a bottom side metal layer electrode lead-out window on the bottom side metal layer after depositing the bottom side metal layer, wherein the bottom side bonding metal layer is electrically connected with the bottom side electrode metal layer through the bottom side metal layer electrode lead-out window;
the bottom bonding metal layer is electrically connected with the device silicon wafer through the bottom body silicon electrode leading-out window;
(4) Placing the prepared bonding metal layers of the device silicon wafer and the substrate slice face to face for bonding process to realize mechanical and electrical connection between the two wafers, wherein the device structure is supported by the substrate through a bonding structure formed between the bonding metal layers;
(5) Depositing a top first insulating layer on the top of the device silicon wafer; etching a top side body silicon electrode leading-out window, a top side body silicon etching window and a top side body silicon etching penetrating release window on the top side first insulating layer;
(6) Sequentially depositing a top first metal layer and a top second insulating layer on the top side of the device silicon wafer; etching a top side metal layer electrode lead-out window on the top side second insulating layer, and depositing a top side second metal layer; the top side second metal layer is electrically connected with the top side first metal layer through the top side metal layer electrode lead-out window;
the top side first metal layer is electrically connected with the device silicon wafer through the top side body silicon electrode leading-out window;
(7) Etching the device silicon wafer at the position of the top side body silicon etching window, and forming an annular insulation groove around the top side body silicon electrode leading-out window; the device silicon chip positioned at the inner side of the insulation groove is respectively and electrically communicated with the top side metal layer and the bottom side bonding metal layer to form an independent top side electric signal lead-out structure, and a device movable structure containing double-side metal multilayer wiring is released; the electric signals of the wiring structure positioned at the bottom side are sequentially led out to the top side of the device from the bottom electrode metal layer, the bottom bonding metal layer and the electric signal leading-out structure at the top side of the device.
7. The method of fabricating a single-plate double-sided wiring type micro-mechanical structure according to claim 6, wherein in the step (3), the operation of depositing the bottom electrode metal layer and the bottom intermetallic insulating layer on the bottom side of the device silicon wafer is:
depositing a bottom side first metal layer on the bottom side first insulating layer; depositing a bottom second insulating layer on the bottom first metal layer, and etching a first bottom metal layer electrode extraction window for electrode extraction of the bottom first metal layer on the bottom second insulating layer; depositing a bottom second metal layer on the bottom second insulating layer; and depositing a bottom third insulating layer on the bottom second metal layer, and etching a second bottom metal layer electrode extraction window for electrode extraction of the bottom second metal layer on the bottom third insulating layer.
8. The preparation method of the single-board double-side wiring type micro-mechanical structure is characterized by comprising the following steps of:
(1) Preparing a substrate slice, and sequentially depositing a substrate insulating layer and a substrate bonding metal layer on the upper side of the substrate slice; etching the substrate slice to form a substrate cavity for the movable structure to move;
(2) Preparing a device silicon wafer, and depositing a bottom base insulating layer on the bottom side of the device silicon wafer; etching a bottom side body silicon etching penetration release window on the bottom side body insulating layer;
(3) Depositing a bottom electrode metal layer, a bottom metal insulating layer and a bottom bonding metal layer on the bottom side of the device silicon wafer in sequence; etching a bottom side metal layer electrode lead-out window on the bottom side metal insulating layer after depositing the bottom side metal insulating layer, wherein the bottom side bonding metal layer is electrically connected with the bottom side electrode metal layer through the bottom side metal layer electrode lead-out window;
(4) Placing the prepared bonding metal layers of the device silicon wafer and the substrate slice face to face for bonding process to realize mechanical and electrical connection between the two wafers, wherein the device structure is supported by the substrate through a bonding structure formed between the bonding metal layers;
(5) Depositing a top first insulating layer on the top of the device silicon wafer; etching a top side body silicon etching penetration release window on the top side first insulating layer; the top side body silicon etching penetrating release windows and the bottom side body silicon etching penetrating release windows are symmetrically arranged on two sides of the device silicon wafer;
(6) Sequentially depositing a top metal layer and a top insulating layer on the top side of the device silicon wafer;
(7) Etching the device silicon wafer at the position of the top side body silicon etching penetrating release window to enable the top side body silicon etching penetrating release window to be communicated with the bottom side body silicon etching penetrating release window, releasing the device movable structure containing double-side metal multilayer wiring, and exposing a signal interface area of a substrate bonding metal layer, wherein the signal interface area of the substrate bonding metal layer forms a device bottom side electric signal lead-out structure; the electric signals of the wiring structure positioned at the bottom side are sequentially led out from the bottom electrode metal layer and the bottom bonding metal layer to the electric signal leading-out structure at the bottom side of the device.
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