CN113015330B - Magnetic random access memory based on III-V group narrow bandgap semiconductor - Google Patents
Magnetic random access memory based on III-V group narrow bandgap semiconductor Download PDFInfo
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- CN113015330B CN113015330B CN202110242787.2A CN202110242787A CN113015330B CN 113015330 B CN113015330 B CN 113015330B CN 202110242787 A CN202110242787 A CN 202110242787A CN 113015330 B CN113015330 B CN 113015330B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
Abstract
The invention discloses a magnetic random access memory based on a III-V group narrow bandgap semiconductor, which comprises the following structures: the invention realizes that the integrated circuit board is matched with the narrow forbidden band core frame plate, the frequency conversion relay board and the narrow forbidden band pins are butted by the through holes of the composite circuit panel with the built-in lamination layer through guiding the diode to form a cross-passage staggered frequency conversion relay operation effect by the frequency conversion relay board and the narrow forbidden band pins, the amplification protection degree of an inclined frame corrugated pipe in a frequency conversion relay and the narrow forbidden band lamination relay operation effect of semiconductor compounds of the narrow forbidden band pins are ensured, the electromagnetic anti-interference strength of a magnetic random access memory and partition plate electrostatic particles and dust particles are improved by the arc extinguishing brush wheel rod, the operation effect of a central control input and output fine architecture circuit panel with internal relay contact is improved, the timeliness and the durability of the memory are improved, the downtime hidden danger is reduced, and the smooth storage operation efficiency is improved.
Description
Technical Field
The invention discloses a magnetic random access memory based on a III-V group narrow bandgap semiconductor, belonging to the field of electronics.
Background
The bipolar transistor storage and the compound semiconductor storage of the magnetic random access memory are operated efficiently, the operation and storage density of a computer host and the high-speed operation efficiency of big data integration are improved, the sensitivity and the precision of continuous high-frequency data input, output and reading of a memory bank are ensured, and the defects which are common in the prior art and need to be optimized are as follows:
a singlechip integrated magnetic random access memory is prepared on the basis of a photovoltaic semiconductor compound chip board with a narrow forbidden band of III-V groups, the operation of transmitting electric signals by a medium is better in magneto-resistance property, but the superposed semiconductor boards can generate electrostatic particles and adsorb dust particles due to magnetic buttons, so that the operation efficiency of a semiconductor memory bank using a bipolar transistor is influenced, the phenomenon of continuous downtime or reading failure of the memory bank is caused, and the operation of a cache band and a database conversion operation of a computer host are influenced.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a magnetic random access memory based on a III-V group narrow bandgap semiconductor, so as to solve the problems that the magnetic random access memory integrated with a single chip microcomputer is prepared on the basis of a photovoltaic semiconductor compound chip board with a III-V group narrow bandgap, the operation of transmitting electric signals by a medium is better in magneto-resistance property, but the superposed semiconductor boards can generate electrostatic particles and adsorb dust particles due to magnetic buttons, so that the operation efficiency of a semiconductor memory bar using a bipolar transistor is influenced, the phenomenon of continuous shutdown or reading failure of the memory bar is caused, and the operation of a cache band and a database conversion operation of a computer host are influenced.
In order to achieve the purpose, the invention is realized by the following technical scheme: a magnetic random access memory based on III-V narrow forbidden band semiconductor comprises the following structures: the narrow forbidden band core frame plate is closely attached to the left lower corner of the integrated circuit board and is positioned on the same vertical surface, the resistance frame block is arranged on the top of the narrow forbidden band core frame plate, more than two single chip microcomputer plates are arranged and are inserted and embedded on the front side of the integrated circuit board, the copper sheet pin plate is provided with more than two and is tightly attached to the bottom of the integrated circuit board, the narrow forbidden band core frame plate is provided with an arc extinguishing brush wheel rod, a frequency conversion relay plate and a narrow forbidden band pin, the arc extinguishing brush wheel rods are three and are all arranged on the right side of the frequency conversion relay board, the narrow forbidden band pins are three and are all inserted and embedded on the left side of the frequency conversion relay board, the arc extinguishing brush wheel rod is electrically connected with the variable-frequency relay board and is located on the same vertical surface, and the variable-frequency relay board is closely attached to the lower left corner of the integrated circuit board and is located on the same vertical surface.
In order to optimize the technical scheme, the method further comprises the following steps:
as a further improvement of the invention, the arc extinguishing brush wheel rod consists of a magnetic brush leading frame wheel and a pin ball rod, wherein the magnetic brush leading frame wheel is arranged on the left side of the pin ball rod, and the magnetic brush leading frame wheel and the pin ball rod are nested into a whole and are positioned on the same vertical plane.
As a further improvement of the invention, the magnetic drawing brush frame wheel consists of a linking magnetic frame rod and an electromagnetic shaft wheel, wherein the linking magnetic frame rod is arranged inside the electromagnetic shaft wheel, and the linking magnetic frame rod and the electromagnetic shaft wheel are tightly attached together and are positioned on the same vertical plane.
As a further improvement of the invention, the frequency conversion relay board consists of a frequency conversion relay and a silicon frame groove board, wherein the frequency conversion relay is installed inside the silicon frame groove board and is electrically connected with the silicon frame groove board and is positioned on the same vertical plane.
As a further improvement of the invention, the variable frequency relay is composed of a tilted corrugated pipe and a frequency converter shell, wherein the tilted corrugated pipe is installed inside the frequency converter shell, and the tilted corrugated pipe and the frequency converter shell are inserted together and are on the same vertical plane.
As a further improvement of the invention, the integrated circuit board is composed of a diode through hole and a circuit panel, the diode through hole is installed inside the circuit panel, and the diode through hole and the circuit panel are of an integral structure and are on the same vertical plane.
As a further improvement of the invention, the diode through hole is composed of a diode bracket and a through hole groove, the diode bracket is installed inside the through hole groove, and the diode bracket and the through hole groove are inserted and embedded together and are on the same vertical plane.
As a further improvement of the invention, the resistance frame block is composed of a resistance block and a lead frame, the resistance block is installed inside the lead frame, and the resistance block is electrically connected with the lead frame and is positioned on the same vertical surface.
As a further improvement of the invention, the resistance block consists of a resistance tube shell and a copper core cylindrical block, the copper core cylindrical block is arranged inside the resistance tube shell, and the resistance tube shell and the copper core cylindrical block are nested into a whole and have collinear axes.
As a further improvement of the invention, the armature magnetic frame rod is a composite magnetic frame structure of a tooth plate inserted armature thyristor cap rod, so that electrostatic particles and dust particles are conveniently adsorbed to form the operation effect of electrostatic arc extinguishing by winding brushes, and the anti-interference efficiency of pins is improved.
As a further improvement of the invention, the inclined frame corrugated pipe is a composite pipe frame structure with a semicircular plate inserted with a double corrugated pipe at the left high and the right low, so that the corrugated frequency conversion relay operation effect is facilitated, and the internal magnetic random storage operation efficiency is improved.
As a further improvement of the invention, the diode bracket is a composite electric tube bracket structure of a capacitor plate inserted with the diode bracket, so that the internal-induction frequency-conversion electrical signal data of a relay can be conveniently converted into a magnetic random storage operation effect.
As a further improvement of the invention, the resistance tube shell is a resistance shell frame structure with left and right pin shell cylinders inserted with copper cores, so that the relay frequency modulation resistance is conveniently inserted left and right to form a relay frequency modulation resistance connection operation effect.
Advantageous effects
The invention relates to a magnetic random access memory based on III-V group narrow bandgap semiconductor, wherein the worker embeds the diode through hole of an integrated circuit board in a circuit panel, the narrow forbidden band pins of the narrow forbidden band core frame plate are butted with the through hole slots through the diode bracket to form a relay operation effect of breakdown current, electric signals are inserted into a host computer for operation through a joint resistor frame block and a singlechip board conduction copper sheet pin plate for adaptive input and output of stored data, and the magnetic brush-leading frame wheel of the arc-extinguishing brush wheel rod is matched with the electromagnetic shaft wheel through the magnetic linking frame rod at one side of the pin ball rod to realize the electrostatic arc-extinguishing anti-interference operation effect, and then, a variable frequency relay of the variable frequency relay board forms dual-corrugated-pipe relay variable frequency operation with a frequency converter shell through an inclined corrugated pipe in a silicon crystal frame groove board, so that the anti-static-interference breakdown operability and the safe and stable operation effect of the amplified operation current of the magnetic random access memory based on the III-V family narrow bandgap semiconductor are improved.
The invention has the following advantages after operation:
the integrated circuit board is matched with the narrow forbidden band core frame plate, the diode through holes are guided to be in butt joint with the variable frequency relay board and the narrow forbidden band pins by the composite circuit panel with the built-in laminated layers to form a transverse-passage staggered variable frequency relay operation effect, the amplification protection degree of the inclined frame corrugated pipe in the variable frequency relay and the narrow forbidden band laminated relay operation effect of semiconductor compounds of the narrow forbidden band pins are guaranteed, the electromagnetic anti-interference strength of the magnetic random access memory and the partition plate electrostatic particles and dust particles are improved by the arc extinguishing brush wheel rod, the operation effect of the central control input and output fine framework circuit panel with the internal relay contact is improved, the timeliness and the durability of the memory are improved, the downtime hidden danger is reduced, and the smooth storage operation efficiency is improved.
Drawings
Other features, objects, and advantages of the present invention will become more apparent from the following detailed description of the embodiments of the invention when taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a schematic structural diagram of a magnetic random access memory based on a III-V narrow bandgap semiconductor according to the present invention.
Fig. 2 is a detailed cross-sectional structural diagram of the integrated circuit board and the narrow bandgap core frame plate according to the present invention.
Fig. 3 is a detailed cross-sectional structural diagram of the narrowband forbidden core frame plate and the resistor frame block of the invention.
Fig. 4 is a detailed cross-sectional structural schematic diagram of the narrow forbidden band core frame plate, the arc extinguishing brush wheel rod and the variable frequency relay plate.
FIG. 5 is an enlarged cross-sectional view of the diode via in operation according to the present invention.
Fig. 6 is a schematic cross-sectional enlarged structure view of the working state of the resistor block of the present invention.
FIG. 7 is an enlarged cross-sectional view of the magnetic brush carrier wheel of the present invention in an operational state.
Fig. 8 is a schematic diagram of the cross-section enlarged structure of the working state of the variable frequency relay of the invention.
Description of reference numerals: an integrated circuit board-1, a narrow forbidden band core frame board-2, a resistance frame block-3, a single chip microcomputer board-4, a copper sheet pin board-5, an arc extinguishing brush wheel rod-2A, a frequency conversion relay board-2B, a narrow forbidden band pin-2C, a magnetic leading brush frame wheel-2A 1, a pin ball rod-2A 2, an armature magnetic frame rod-2A 11, an electromagnetic shaft wheel-2A 12, a frequency conversion relay-2B 1, a silicon crystal frame slot board-2B 2, an inclined frame corrugated pipe-2B 11, a frequency converter shell-2B 12, a diode through hole-11, a circuit panel-12, a diode support-111, a through hole groove-112, a resistance block-31, a pin frame-32, a resistance pipe shell-311 and a copper core column block-312.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
The first embodiment is as follows:
referring to fig. 1-8, the present invention provides a magnetic random access memory based on III-V narrow bandgap semiconductor, which comprises: the narrow forbidden band core frame plate 2 is tightly attached to the lower left corner of the integrated circuit board 1 and is positioned on the same vertical plane, the resistor frame block 3 is installed on the top of the narrow forbidden band core frame plate 2, the single chip board 4 is provided with more than two and is inserted and embedded on the front side of the integrated circuit board 1, the copper sheet pin 5 is provided with more than two and is tightly attached to the bottom of the integrated circuit board 1, the narrow forbidden band core frame plate 2 is provided with three arc extinguishing brush wheel rods 2A, a variable frequency relay plate 2B and narrow forbidden band pins 2C, the arc extinguishing brush wheel rods 2A are provided with three and are all installed on the right side of the variable frequency relay plate 2B, the narrow forbidden band pins 2C are provided with three and are all inserted and embedded on the left side of the variable frequency relay plate 2B, the arc extinguishing brush wheel rods 2A are electrically connected with the variable frequency relay plate 2B and are positioned on the same vertical plane, the variable-frequency relay board 2B is tightly attached to the left lower corner of the integrated circuit board 1 and is positioned on the same vertical plane.
Referring to fig. 4, the arc extinguishing brush wheel rod 2A is composed of a magnetic guiding brush wheel 2A1 and a pin ball rod 2A2, the magnetic guiding brush wheel 2A1 is installed on the left side of the pin ball rod 2A2, the magnetic guiding brush wheel 2A1 and the pin ball rod 2A2 are nested into a whole and are located on the same vertical plane, the variable frequency relay board 2B is composed of a variable frequency relay 2B1 and a silicon crystal frame slot board 2B2, the variable frequency relay 2B1 is installed inside the silicon crystal frame slot board 2B2, the variable frequency relay 2B1 is electrically connected with the silicon crystal frame slot board 2B2 and is located on the same vertical plane, and the operation effect of relaying and preventing electrostatic interference is formed on the right side of the silicon crystal frame slot board 2B2 through the magnetic guiding brush wheel 2A 1.
Referring to fig. 7, the magnetic drawing brush carrier wheel 2a1 is composed of an armature magnetic carrier rod 2a11 and an electromagnetic arbor wheel 2a12, the armature magnetic carrier rod 2a11 is installed inside the electromagnetic arbor wheel 2a12, the armature magnetic carrier rod 2a11 and the electromagnetic arbor wheel 2a12 are tightly attached together and located on the same vertical plane, the armature magnetic carrier rod 2a11 is a composite magnetic carrier structure in which a toothed plate is inserted into an armature thyristor cap rod, so that electrostatic particles and dust particles are adsorbed to form a brush-wound electrostatic arc extinguishing operation effect, the pin interference resistance efficiency is improved, and the armature magnetic carrier rod 2a11 adsorbs the electrostatic ions to demagnetize around the electromagnetic arbor wheel 2a12 with high efficiency.
Referring to fig. 8, the frequency conversion relay 2B1 is composed of an oblique frame corrugated tube 2B11 and a frequency converter housing 2B12, the oblique frame corrugated tube 2B11 is installed inside the frequency converter housing 2B12, the oblique frame corrugated tube 2B11 and the frequency converter housing 2B12 are inserted and embedded together and are located on the same vertical plane, the oblique frame corrugated tube 2B11 is a composite wire tube frame structure with a semicircular sheet plate inserted and inserted with a dual corrugated tube in a left-high-right-low mode, so that the operation effect of the corrugated frequency conversion relay is facilitated, the operation efficiency of internal magnetic attraction random storage is improved, and the operation effect of magnetic random storage and conversion of an electric signal of dual-corrugated frequency conversion pipeline conduction is formed in the frequency converter housing 2B12 through the oblique frame corrugated tube 2B 11.
Referring to fig. 2, the integrated circuit board 1 is composed of a diode through hole 11 and a circuit panel 12, the diode through hole 11 is installed inside the circuit panel 12, the diode through hole 11 and the circuit panel 12 are integrated and located on the same vertical plane, and a relay operation effect of inserting an auxiliary frame protection pin is formed by embedding the diode through hole 11 in the circuit panel 12.
Referring to fig. 5, the diode through hole 11 is composed of a diode support 111 and a through hole slot 112, the diode support 111 is installed inside the through hole slot 112, the diode support 111 and the through hole slot 112 are inserted and embedded together and are located on the same vertical plane, the diode support 111 is a composite electric support structure of a capacitor plate inserted and connected with the diode support, so that a magnetic random storage operation effect is formed by frequency conversion electric signal data in a relay conveniently, and a voltage stabilization operation effect of a breakdown current is formed by the diode support 111 and the through hole slot 112.
The working process is as follows: the worker embeds the diode through hole 11 of the integrated circuit board 1 in the circuit panel 12, forms the relay operation effect of the breakdown current by butting the narrow forbidden band pin 2C of the narrow forbidden band core frame plate 2 with the through hole groove 112 through the diode bracket 111, leads the electric signal to be inserted into the host computer for operation by connecting the resistance frame block 3 and the singlechip board 4 to conduct the copper sheet pin plate 5 for adaptive input and output of the stored data, and the magnetic leading brush frame wheel 2A1 of the arc extinguishing brush wheel rod 2A is matched with the electromagnetic shaft wheel 2A12 at one side of the pin ball rod 2A2 through the linking iron magnetic frame rod 2A11 to realize the operation effect of electrostatic arc extinguishing and interference resistance, then, the frequency conversion relay 2B1 of the frequency conversion relay board 2B forms a double-corrugated-tube relay frequency conversion operation in the silicon crystal frame groove board 2B2 through the inclined-frame corrugated tube 2B11 and the frequency converter shell 2B12, and the anti-static-interference downtime operability and the safe and stable operation effect of the amplification operation current of the magnetic random access memory based on the III-V family narrow bandgap semiconductor are improved.
Example two:
referring to fig. 1 to 8, the present invention provides a magnetic random access memory based on a III-V narrow bandgap semiconductor, which is otherwise the same as embodiment 1 except that:
referring to fig. 3, the resistor block 3 is composed of a resistor block 31 and a lead frame 32, the resistor block 31 is installed inside the lead frame 32, the resistor block 31 is electrically connected with the lead frame 32 and is located on the same vertical plane, and the operation effect of node amplification resistance regulation and stabilization current is formed in the lead frame 32 through the resistor block 31.
Referring to fig. 6, the resistor block 31 is composed of a resistor casing 311 and a copper core cylindrical block 312, the copper core cylindrical block 312 is installed inside the resistor casing 311, the resistor casing 311 and the copper core cylindrical block 312 are nested into a whole, and the axes of the resistor casing 311 and the copper core cylindrical block 312 are collinear, the resistor casing 311 is a resistor casing frame structure with left and right lead casing tubes for inserting copper cores, so that the relay frequency modulation resistor is conveniently inserted into the resistor casing frame structure from left to right to form a relay frequency modulation resistor engagement operation effect, and the resistor casing 311 wraps the copper core cylindrical block 312 to form a relay protection operation effect.
The operation effect of circuit backflow feedback is formed by the whole compiling of the previous single chip microcomputer database and the reading of the input and the output of the memory strip, so that the resistance block 31 of the resistance frame block 3 is in the auxiliary flow regulation and voltage stabilization balance of the potential conduction resistance tube shell 311 and the copper core column block 312 in the lead frame 32, and the stability of the memory plate block of the internal circuit is improved.
The invention achieves the effect of applying the integrated circuit board 1 to be matched with the narrow forbidden band core frame board 2, leading the diode through hole 11 to be butted with the frequency conversion relay board 2B and the narrow forbidden band pin 2C to form a transverse passage dislocation frequency conversion relay operation effect by the composite circuit panel 12 with a built-in laminated layer, ensuring the amplification protection degree of the inclined frame corrugated pipe 2B11 in the frequency conversion relay 2B1 and the narrow forbidden band laminated relay operation effect of the semiconductor compound of the narrow forbidden band pin 2C, improving the electromagnetic anti-interference strength of the magnetic random access memory and the partition plate electrostatic particles and dust particles by the arc extinguishing brush wheel rod 2A, improving the operation effect of the central control input and output fine framework circuit panel 12 with internal relay contact, improving the timeliness and durability of the memory, reducing the hidden trouble of breakdown, improving the smooth memory operation efficiency, thereby solving the problem of preparing the integrated magnetic random access memory by the photovoltaic semiconductor compound board based on the III-V family narrow forbidden band, the operation of transmitting electric signals by a medium with better magneto-resistance property is realized, but the superposed semiconductor plates can generate electrostatic particles and adsorb dust particles due to magnetic buttons, so that the operation efficiency of a semiconductor memory bank using the bipolar transistor is influenced, the phenomenon of continuous downtime or reading failure of the memory bank is caused, and the operation of a running cache tape and database conversion operation of a computer host are influenced.
The specific embodiments described herein are merely illustrative of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the scope of the invention or exceeding the scope of the claims appended hereto.
Claims (1)
1. A magnetic random access memory based on III-V narrow forbidden band semiconductor comprises the following structures: integrated circuit board (1), narrow forbidden zone core frame board (2), resistance frame piece (3), single chip microcomputer board (4), copper sheet pin board (5), its characterized in that:
the narrow forbidden band core frame plate (2) is tightly attached to the lower left corner of the integrated circuit board (1), the resistor frame block (3) is installed on the top of the narrow forbidden band core frame plate (2), the single chip microcomputer plate (4) is provided with more than two and is inserted and embedded in the front side of the integrated circuit board (1), and the copper sheet pin guide plate (5) is provided with more than two and is tightly attached to the lower bottom of the integrated circuit board (1);
the narrow forbidden band core frame plate (2) is provided with an arc extinguishing brush wheel rod (2A), a frequency conversion relay plate (2B) and a narrow forbidden band pin (2C);
the arc extinguishing brush wheel rods (2A) are three and are all installed on the right side of the frequency conversion relay board (2B), the narrow forbidden band pins (2C) are three and are all inserted and embedded on the left side of the frequency conversion relay board (2B), the arc extinguishing brush wheel rods (2A) are electrically connected with the frequency conversion relay board (2B), and the frequency conversion relay board (2B) is tightly attached to the lower left corner of the integrated circuit board (1);
the arc extinguishing brush wheel rod (2A) is composed of a magnetic leading brush frame wheel (2A1) and a pin ball rod (2A2), the magnetic leading brush frame wheel (2A1) is installed on the left side of the pin ball rod (2A2), and the magnetic leading brush frame wheel (2A1) and the pin ball rod (2A2) are nested into a whole;
the magnetic drawing brush frame wheel (2A1) is composed of a holding magnetic frame rod (2A11) and an electromagnetic shaft wheel (2A12), the holding magnetic frame rod (2A11) is installed inside the electromagnetic shaft wheel (2A12), and the holding magnetic frame rod (2A11) and the electromagnetic shaft wheel (2A12) are tightly attached together;
the frequency conversion relay board (2B) consists of a frequency conversion relay (2B1) and a silicon crystal frame slot board (2B2), the frequency conversion relay (2B1) is installed inside the silicon crystal frame slot board (2B2), and the frequency conversion relay (2B1) is electrically connected with the silicon crystal frame slot board (2B 2);
the variable frequency relay (2B1) is composed of an inclined frame corrugated pipe (2B11) and a frequency converter shell (2B12), the inclined frame corrugated pipe (2B11) is installed inside the frequency converter shell (2B12), and the inclined frame corrugated pipe (2B11) and the frequency converter shell (2B12) are inserted and embedded together;
the integrated circuit board (1) is composed of a diode through hole (11) and a circuit panel (12), the diode through hole (11) is installed inside the circuit panel (12), and the diode through hole (11) and the circuit panel (12) are of an integrated structure;
the diode through hole (11) consists of a diode support (111) and a through hole groove (112), the diode support (111) is arranged inside the through hole groove (112), and the diode support (111) and the through hole groove (112) are inserted and embedded together;
the resistor frame block (3) consists of a resistor block (31) and a lead frame (32), the resistor block (31) is installed inside the lead frame (32), and the resistor block (31) is electrically connected with the lead frame (32);
the resistor block (31) is composed of a resistor tube shell (311) and a copper core cylindrical block (312), the copper core cylindrical block (312) is installed inside the resistor tube shell (311), and the resistor tube shell (311) and the copper core cylindrical block (312) are nested into a whole.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110242787.2A CN113015330B (en) | 2021-03-05 | 2021-03-05 | Magnetic random access memory based on III-V group narrow bandgap semiconductor |
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| CN202110242787.2A CN113015330B (en) | 2021-03-05 | 2021-03-05 | Magnetic random access memory based on III-V group narrow bandgap semiconductor |
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| CN113015330B true CN113015330B (en) | 2022-03-11 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101097987A (en) * | 2006-03-29 | 2008-01-02 | 株式会社东芝 | Magnetic recording element and magnetic memory |
| CN107534018A (en) * | 2015-04-27 | 2018-01-02 | 东芝存储器株式会社 | Magnetic memory device |
| CN112054116A (en) * | 2020-09-14 | 2020-12-08 | 上海科技大学 | Magnetic random access memory based on III-V group narrow bandgap semiconductor |
| CN112416085A (en) * | 2020-11-26 | 2021-02-26 | 南京信息工程大学 | Block chain arithmetic device for computer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6010005B2 (en) * | 2013-09-09 | 2016-10-19 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
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- 2021-03-05 CN CN202110242787.2A patent/CN113015330B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101097987A (en) * | 2006-03-29 | 2008-01-02 | 株式会社东芝 | Magnetic recording element and magnetic memory |
| CN107534018A (en) * | 2015-04-27 | 2018-01-02 | 东芝存储器株式会社 | Magnetic memory device |
| CN112054116A (en) * | 2020-09-14 | 2020-12-08 | 上海科技大学 | Magnetic random access memory based on III-V group narrow bandgap semiconductor |
| CN112416085A (en) * | 2020-11-26 | 2021-02-26 | 南京信息工程大学 | Block chain arithmetic device for computer |
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