CN113012749A - Method for detecting single event effect of Flash memory - Google Patents
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- CN113012749A CN113012749A CN202110010876.4A CN202110010876A CN113012749A CN 113012749 A CN113012749 A CN 113012749A CN 202110010876 A CN202110010876 A CN 202110010876A CN 113012749 A CN113012749 A CN 113012749A
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- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
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Abstract
A Flash memory single event effect detection method comprises four steps: firstly, unsealing a Flash memory; secondly, carrying out a single event effect detection test in a static unbiased mode of the device; thirdly, carrying out a single event effect detection test in a static mode of the device; and fourthly, carrying out a single event effect detection test in a dynamic mode of the device. The invention provides a method for detecting the single event effect of a Flash memory, which covers single event upset, single event functional interruption and single event latch-up, can distinguish the upset caused by a storage unit and a peripheral circuit, and provides reference for related single event effect detection tests.
Description
The technical field is as follows:
the invention relates to a method for detecting a single event effect of a Flash memory, belonging to the field of space radiation effect detection.
(II) background of the invention
Various charged particles in the space environment can cause radiation damage to semiconductor devices in the aerospace system. In early studies, the irradiation effects of the devices were mainly total dose effects and displacement damage. The characteristic size of semiconductor devices is continuously reduced, and the single event effect appears along with the characteristic size, and becomes a main factor influencing the normal operation of an aerospace electronic system. When high-energy particles enter a semiconductor device, electron-hole pairs generated by interaction with a sensitive region of the device are collected by the device, and the abnormal function of the device or the damage of the device is a single-particle effect. The single event effect is divided into single event upset, single event latch-up, single event functional interruption, etc.
The basic unit of most Flash memories is a MOS transistor based on floating gate technology, which has two gates, a control gate and a floating gate between the channel and the control gate. Flash can be classified into NOR type and NAND type according to its internal structure and technical implementation characteristics. The NAND type Flash is connected in series among storage units, has higher bit density and lower cost per bit than a NOR architecture. The NOR Flash has the advantages that the units are connected in parallel, the transmission efficiency is high, the reading speed is high, and the on-chip execution function is realized. The single event effect may affect the content and function of the stored data of the Flash memory, for example, the data stored in the Flash memory unit may be turned over from 1 to 0 or from 0 to 1, resulting in data error, logic disorder, instruction exception, etc., and further affecting the stability and reliability of the whole system. As the Flash memories are applied to various types of aerospace systems in large quantity, the evaluation of the single event effect is of great importance.
At present, relevant standards of single event effect tests in China include QJ10005-2008, GJB6777-2009 and GJB7242-2011, but no specific effect detection method is given in the standards. Most researches on single-particle effect detection of Flash memories generally lack effect differentiation and different influence consideration on device storage areas and peripheral circuits.
The patent summarizes and researches the detection technology of the single event effect of the Flash memory, and provides a method for detecting the single event effect of the Flash memory, which covers single event upset, single event functional interruption and single event latch-up and can distinguish the upset caused by a storage unit and a peripheral circuit. The method can provide reference for relevant single event effect detection experiments and support the anti-irradiation identification and inspection of the NOR Flash memory.
(III) the invention content:
1. the purpose is as follows:
the invention aims to provide a Flash memory single event effect detection method, which covers single event upset, single event functional interruption and single event latch-up, can distinguish the upset caused by a memory cell and a peripheral circuit, and provides reference for related single event effect detection experiments.
2. The technical scheme is as follows:
the invention provides a method for detecting a single event effect of a Flash memory, which comprises the following steps:
the method comprises the following steps: and (5) unsealing the device. The main component of the plastic package is epoxy resin, and the plastic package is usually removed by concentrated nitric acid and concentrated sulfuric acid. For ceramic packaged components, the mixed acid is generally used to etch away the package outside the component, exposing the internal chip or leads for subsequent analysis.
Step two: and carrying out a single event effect detection test in a static unbiased mode of the device. The whole-chip writing and reading of the device are firstly carried out for verification, then the bias voltage is removed, and the particle irradiation is carried out on the device. And stopping when the irradiation reaches the expected fluence, recovering the bias voltage, reading the data in the Flash and recording errors.
And performing multiple experiments on the device under the same incident energy to obtain multiple data points, calculating an overturning section, drawing a relation curve of an effect section and an incident particle LET value, and obtaining an LET threshold value and a saturation section of the single particle effect.
Step three: and carrying out a single event effect detection test in a static mode of the device. The device is first written in full slice, read for verification and then irradiated with particles. And stopping when the irradiation reaches the expected fluence, reading data in Flash and recording errors.
And performing multiple experiments on the device under the same incident energy to obtain multiple data points, calculating an overturning section, drawing a relation curve of an effect section and an incident particle LET value, and obtaining an LET threshold value and a saturation section of the single particle effect.
Step four: and carrying out a single event effect detection test in a dynamic mode of the device. The instrument was turned on for particle irradiation. And carrying out full-slice writing on the device and observing whether the operation is finished. If the operation is complete, the full slice is read and compared to the write data. And when the result has the overturn and the overturn number is less than the set threshold value, reading again. And recording the bit which is turned over in two times as single event turning over caused by the storage unit, and recording the bit which is turned over and recovered as turning over caused by a peripheral circuit. And when the result has upset and the upset number is greater than the set threshold value, recording the single event function interruption error. If the operation is not finished, recording the single event function interruption error, and resetting the device for continuous detection. And (3) rewriting 0 or erasing 1 to the upset bit in the test, if the upset does not disappear, recording the bit as a hard error in single event upset, and continuing to perform the test. And when the greatly increased current is observed, the power supply is disconnected, the single event latchup error is recorded, the test is started after the single event latchup is eliminated after the short-time standing.
And performing full erase after full write, and repeating the operations. The test was stopped when the irradiation reached the desired fluence.
And performing multiple experiments on the device under the same incident energy to obtain multiple data points, calculating an overturning section, drawing a relation curve of an effect section and an incident particle LET value, and obtaining an LET threshold value and a saturation section of the single particle effect.
Through the steps, the detection of common single event effects, namely single event upset, single event functional interruption and single event latch-up, of the Flash memory can be completed, the upset caused by the memory cell and the peripheral circuit can be distinguished, and the specific effect sensitivity of different components of the device can be evaluated. The detection method is simple and practical, is easy to implement, and has popularization and application values.
The object of "unsealing the device" described in the first step is as follows:
the ground high-energy particle simulation experiment is the most common experiment method in the current single particle effect research, can better reflect the radiation characteristic of a device, and is a heavy ion beam or proton beam provided by a common ground simulation source particle accelerator, a 252Cf fragment simulation source, a 14MeV neutron source, pulse laser and the like. Since the laser itself is a light that cannot penetrate plastic and ceramic packages, and the cyclotron provides a limited range of particles that cannot penetrate the packages of the devices, it is necessary to de-encapsulate the devices before testing.
The purpose of the single event effect detection test in the static unbiased mode and the static mode of the device in the second and third steps is as follows:
the static and static unbiased modes can eliminate the influence of single event latch-up and single event function interruption of the peripheral circuit, because the peripheral control circuit does not work at the moment, and the incident particles only act on the memory cell. Two static irradiation tests are carried out, so that the overturning mode caused by the storage unit of the device to be tested can be observed, and meanwhile, the single event effect sensitivity of the device in the storage state is evaluated.
The purpose of the single event effect detection test in the dynamic mode of the device in the fourth step is as follows:
in addition to single-event upset, single-event functional interruption and single-event latch caused by a peripheral control circuit may occur in a dynamic irradiation test, and Flash is more prone to destructive faults in the operation processes due to the high voltage existing in the erasing and writing operations of Flash.
And continuously reading and observing whether the error disappears after irradiation, judging whether the error disappears or not to be the turnover caused by the peripheral circuit, and if the error does not disappear, judging that the error disappears is caused by the particle incidence storage unit. Charge loss and trapping in the floating gate of a memory cell causes the floating gate transistor threshold voltage to drift, which can cause data toggling. While peripheral circuits, such as buffers, may pass errors to the memory cells in dynamic mode, also causing data flipping. The Flash memory has short reading time and no high voltage, and correct information can be retrieved by reading again, which means that the information actually stored on the floating gate is not damaged (the amount of stored charge of the floating gate is not changed). In contrast, a faulty bit still exists whose floating gate cell stored a change in charge causing the threshold voltage to drift to another state, and information is permanently lost.
When 0 or 1 is written into the inverted bit in the test, namely the charge quantity of the storage unit is changed again, the inversion error is not lost, and the floating gate unit has a hard error.
The single event functional interruption criterion in the step four is as follows:
single-event functional interrupts are classified into transient and sustained. Transient single event functional interrupts are caused by particle injection control circuits and buffers, which, unlike sustained single event functional interrupts, disappear without resetting the device. Transient single event functional interrupts are further divided into:
(1) page faults, the number of faults in a certain page is far more than the average value of other pages;
(2) block errors, the number of errors in a block far exceeds the average value of other blocks;
(3) vertical error, after an error occurs in one page/block, an error also occurs in the same location in a subsequent page/block.
In single event effect detection, it is common for a large number of data flips, either entire pages or in succession, to be attributed to a single event functional interrupt rather than a large number of single bit flips. And setting a bit flipping threshold according to the capacity of the memory, and judging that the single event function interruption occurs when the read error number is larger than the threshold.
The continuous single-particle functional interruption is represented as functional failure of the device, and can be judged according to actual phenomena, such as the occurrence of whole page reading failure in continuous reading operation, which are related to radiation damage of a peripheral circuit of a floating gate unit. Specific phenomena are that addresses cannot be accessed, write/read/erase operations are suspended, partial erase, the ready signal is always kept busy, resulting in an infinite loop of operations, etc. Sustained single event functional interrupts may be resumed by a power cycle or a reset command.
Wherein the single event latchup criterion in step four is as follows:
single event latchup is caused by the activation of parasitic thyristors, which manifests as a continuous increase in operating current. During normal operation of the device, internal bus contention may be caused by logic state switching in the control circuit and the register, which may cause sudden increase of device current, and the operating current may also be increased due to interruption of the single event function. Unlike single particle latch-up, these current peaks caused by particle incidence have a short duration, and the operating current can be self-restored to normal. The circuit is prevented from being damaged by single event latch-up by detecting the working current of the device and cutting off the power supply when the current is larger than a set threshold value.
Wherein, the data detection mode in the steps two, three and four is as follows:
the Flash memory writes 0 according to the memory address and erases (writes 1) according to the sector, and the common single event effect detection data mode can select a pseudo-random sequence and a complementary sequence thereof for simulating real data, and can also select all 0 and all 1, a checkerboard and an inverse checkerboard.
Most experimental results show that the memory cell will only cause a 0 to 1 flip, while the peripheral circuits will cause 0 to 1 and 1 to 0 flips, so the all-0 mode is the worst case for single bit errors. But since the all 0 mode cannot detect a 1 to 0 flip by the peripheral circuit, a checkerboard and random sequence are used in most detections, with errors from 1 to 0 indicating that the error is coming from the peripheral circuit. After irradiation, all data patterns can be used to test the dut to determine if it has failed, table 1 shows the test data patterns and their applicability.
TABLE 1 data schema and applicability
| Data schema | Applicability of the invention |
| All 0 all 1 | Judging functional failure after irradiation |
| Checkerboard | All assays |
| Random sequence | All assays |
Wherein, the data analysis and processing operations in the second, third and fourth steps are as follows:
the probability of a single event effect occurring is generally expressed in cross section and is defined as:
wherein sigma is the single event effect cross section and the unit is cm2The larger the cross section, the poorer the device's ability to resist single event effects. N is the frequency of a certain effect of the device; phi is the particle fluence, which is the number of incident particles per unit area, in cm-2(ii) a Theta refers to an included angle between the incident direction of ions and the vertical direction of the device; Φ cos θ is the total number of particles incident perpendicularly to the surface of the device.
Curve fitting is typically performed using the Weibull function.
Wherein σhiShowing the flip cross-section caused by heavy ions, LET showing the energy accumulated by heavy ions in a unit sensitive area, LETthRepresenting the minimum energy value, σ, required for heavy ions to cause a single event effectsatDenotes the flip saturation cross section, and W and S denote the shape parameters of the Weibull function.
3. The advantages and the effects are as follows:
the invention has the advantages that:
(1) the method for detecting the single event effect of the Flash memory is provided, single event upset, single event functional interruption and single event blocking are covered, and the common single event effect mode of the Flash memory is covered comprehensively;
(2) the single event upset distinguishing caused by the memory cell and the peripheral circuit is considered, and the single event upset sensitivity of the two components of the device can be evaluated;
(3) the detection method is simple and practical, is easy to implement and has popularization and application values.
(IV) description of the drawings:
FIG. 1 shows a flow chart of single event effect detection of a Flash memory in a dynamic mode
FIG. 2, classification of single event effect of Flash memory and fault reason
FIG. 3 shows the relationship between the single event upset section and LET and the Weibull fitting curve
FIG. 4, Flash memory single event effect detection step
(V) specific embodiment:
the invention relates to a method for detecting a single event effect of a Flash memory, which comprises the following specific implementation steps of:
the method comprises the following steps: and unsealing the selected Flash memory. Common plastic package devices and ceramic package devices are unsealed by acid corrosion combined with an unsealing device, so that internal chips or leads are exposed, and a radiation source can act on a functional area of the devices conveniently.
Step two: writing checkerboard or random sequence data into Flash, performing particle irradiation in a static unbiased mode, namely when the device is not powered on and does not work, reading stored data after irradiation is finished, and recording errors. The device does not work in a static unbiased mode, irradiation only acts on the storage unit, and the static unbiased mode can simulate the single event effect of the device in a storage state.
Step three: writing checkerboard or random sequence data into Flash, performing particle irradiation in a static mode, namely when the device is electrified and does not work, reading stored data after irradiation is finished, and recording errors. In the static mode, the device is only powered on, the peripheral circuit does not work, the irradiation only acts on the memory cell, and the single event upset mode caused by the memory cell, namely from 0 to 1 or from 1 to 0, can be obtained.
Step four: the particle irradiation is carried out in a dynamic mode, namely when the device executes full-slice reading, full-slice writing checkerboard or random sequence data and full-slice erasing operation, and the working current of the device is monitored, wherein the flow chart is shown in figure 1, and the single-particle effect classification and the fault reason of the Flash memory are shown in figure 2. And recording single event upset, single event functional interruption and single event lockout errors in real time, and ending irradiation after the specified fluence is reached.
The criterion of the single-event functional interruption is as follows: for a large number of data flips, either for a whole page or in succession, due to a single event functional interrupt, rather than a large number of single bit flips. And setting a bit flipping threshold according to the capacity of the memory, and judging that the single event function interruption occurs when the read error number is larger than the threshold. And (3) the device has functional failures such as address inaccessibility, write/read/erase operation pause, partial erase, unlimited operation circulation caused by the fact that the ready signal is kept busy forever, and the like, and the occurrence of single-event functional interruption is also judged.
The criterion of the single event upset hard error is as follows: when 0 or 1 is written into the inverted bit in the test, namely the charge quantity of the storage unit is changed again, the inversion error does not disappear, and the floating gate unit has a hard error.
The criterion of single event occlusion is as follows: single event latchup was judged to have occurred when a large increase in current was observed and normal current could not be restored.
The criterion for causing the memory cell and the peripheral circuit to overturn is as follows: and reading the data once after finding the inversion bit, observing whether the error disappears, judging whether the data is inverted by the peripheral circuit if the error disappears, and judging whether the data is inverted by the particle incident storage unit if the data is not erased.
Step five: and carrying out multiple experiments on the device under the same incident energy to obtain multiple data points and calculate a turning section so as to obtain the relation between the effect section and the incident LET value. Curve fitting is carried out through a Weibull function to obtain an LET threshold value and a saturation section of the single event effect, the LET threshold value and the saturation section are used as important indexes for evaluating the single event effect sensitivity, and the relation between the single event upset section and the LET and a Weibull fitting curve are shown in figure 3. The probability of a single event effect occurring is generally expressed in cross-section and is defined as:
wherein sigma is the single event effect cross section and the unit is cm2The larger the cross sectionThe poorer the resistance of the device to the single event effect. N is the frequency of a certain effect of the device; phi is the particle fluence, which is the number of incident particles per unit area, in cm-2(ii) a Theta refers to an included angle between the incident direction of ions and the vertical direction of the device; Φ cos θ is the total number of particles incident perpendicularly to the surface of the device.
Curve fitting is typically performed using the Weibull function.
Wherein σhiShowing the flip cross-section caused by heavy ions, LET showing the energy accumulated by heavy ions in a unit sensitive area, LETthRepresenting the minimum energy value, σ, required for heavy ions to cause a single event effectsatDenotes the flip saturation cross section, and W and S denote the shape parameters of the Weibull function.
Claims (7)
1. A method for detecting single event effect of a Flash memory covers single event upset, single event functional interruption and single event latch-up, and can distinguish the upset caused by a memory cell and a peripheral circuit. The method is characterized in that:
it comprises the following steps:
the method comprises the following steps: and (5) unsealing the device. The main component of the plastic package is epoxy resin, and the plastic package is usually removed by concentrated nitric acid and concentrated sulfuric acid. For ceramic packaged components, the mixed acid is generally used to etch away the package outside the component, exposing the internal chip or leads for subsequent analysis.
Step two: and carrying out a single event effect detection test in a static unbiased mode of the device. The whole-chip writing and reading of the device are firstly carried out for verification, then the bias voltage is removed, and the particle irradiation is carried out on the device. And stopping when the irradiation reaches the expected fluence, recovering the bias voltage, reading the data in the Flash and recording errors.
And performing multiple experiments on the device under the same incident energy to obtain multiple data points, calculating an overturning section, drawing a relation curve of an effect section and an incident particle LET value, and obtaining an LET threshold value and a saturation section of the single particle effect.
Step three: and carrying out a single event effect detection test in a static mode of the device. The whole-chip writing and reading of the device are firstly carried out for verification, and then the particle irradiation is carried out on the device. And stopping when the irradiation reaches the expected fluence, reading data in Flash and recording errors.
And performing multiple experiments on the device under the same incident energy to obtain multiple data points, calculating an overturning section, drawing a relation curve of an effect section and an incident particle LET value, and obtaining an LET threshold value and a saturation section of the single particle effect.
Step four: and carrying out a single event effect detection test in a dynamic mode of the device. And starting the instrument to perform particle irradiation. And carrying out full-slice writing on the device and observing whether the operation is finished. If the operation is complete, the full slice is read and compared to the write data. And when the result has the overturn and the overturn number is less than the set threshold value, reading again. And recording the bit which is turned over in two times as single event turning over caused by the storage unit, and recording the bit which is turned over and recovered as turning over caused by a peripheral circuit. And when the result has upset and the upset number is greater than the set threshold value, recording the single event function interruption error. If the operation is not finished, recording the single event function interruption error, and resetting the device for continuous detection. And (4) rewriting 0 or erasing 1 to the upset bit in the test, if the upset does not disappear, recording the bit as a hard error in single event upset, and continuing the test. And when the greatly increased current is observed, the power supply is disconnected, the single event latchup error is recorded, the test is started after the single event latchup is eliminated after the short-time standing.
And performing full erase after full write, and repeating the operations. The test was stopped when the irradiation reached the desired fluence.
And performing multiple experiments on the device under the same incident energy to obtain multiple data points, calculating an overturning section, drawing a relation curve of an effect section and an incident particle LET value, and obtaining an LET threshold value and a saturation section of the single particle effect.
Through the steps, the detection of common single event effects, namely single event upset, single event functional interruption and single event latch-up, of the Flash memory can be completed, the upset caused by the memory cell and the peripheral circuit can be distinguished, and the specific effect sensitivity of different components of the device can be evaluated. The detection method is simple and practical, is easy to implement, and has popularization and application values.
2. The method for detecting the single event effect of the Flash memory according to claim 1, wherein the method comprises the following steps:
the purpose of the single event effect detection test in the static unbiased mode and the static mode of the device in the second and third steps is as follows:
the static and static unbiased modes can eliminate the influence of single event latch-up and single event function interruption of the peripheral circuit, because the peripheral control circuit does not work at the moment, and the incident particles only act on the memory cell. Two static irradiation tests are carried out, so that the overturning mode caused by the storage unit of the device to be tested can be observed, and meanwhile, the single event effect sensitivity of the device in the storage state is evaluated.
3. The method for detecting the single event effect of the Flash memory according to claim 1, wherein the method comprises the following steps:
the "single event effect detection test in device dynamic mode" described in step four aims to be as follows:
in addition to single-event upset, single-event functional interruption and single-event latch caused by a peripheral control circuit may occur in a dynamic irradiation test, and Flash is more prone to destructive faults in the operation processes due to the high voltage existing in the erasing and writing operations of Flash.
And continuously reading and observing whether the error disappears after irradiation, judging that the error is the turnover caused by the peripheral circuit if the error disappears, and judging that the error is caused by the particle incident storage unit if the error does not disappear. Charge loss and trapping in the floating gate of a memory cell causes the floating gate transistor threshold voltage to drift, which can cause data inversion. While peripheral circuits, such as buffers, may pass errors to the memory cells in dynamic mode, also causing data flipping. The Flash memory has short reading time and no high voltage, and correct information can be retrieved by reading again, which means that the information actually stored on the floating gate is not damaged (the amount of stored charge of the floating gate is not changed). In contrast, a faulty bit still exists whose floating gate cell stored a change in charge causing the threshold voltage to drift to another state, and information is permanently lost.
When 0 or 1 is written into the inverted bit in the test, namely the charge quantity of the storage unit is changed again, the inversion error does not disappear, and the floating gate unit has a hard error.
4. The method for detecting the single event effect of the Flash memory according to claim 1, wherein the method comprises the following steps:
the single event functional interruption criterion in the step four is as follows:
single-event functional interrupts are classified into transient and sustained. Transient single event functional interrupts are caused by particle incident control circuits and buffers, which disappear without resetting the device, unlike sustained single event functional interrupts. Transient single event functional interrupts are further divided into:
(1) page faults, the number of faults in a certain page is far more than the average value of other pages;
(2) block errors, the number of errors in a block far exceeds the average value of other blocks;
(3) vertical error, after an error occurs in one page/block, an error also occurs in the same location in a subsequent page/block.
In single event effect detection, it is common for a large number of data flips, either entire pages or in succession, to be attributed to a single event functional interrupt rather than a large number of single bit flips. And setting a bit upset threshold according to the capacity of the memory, and judging that the single event function interruption occurs when the read error number is greater than the threshold.
The continuous single-particle functional interruption is represented as functional failure of the device, and can be judged according to actual phenomena, such as the occurrence of a whole page reading failure in continuous reading operation, which is related to radiation damage of a peripheral circuit of a floating gate unit. Specific phenomena are that addresses cannot be accessed, write/read/erase operations are suspended, partial erase, the ready signal is always kept busy, resulting in an infinite loop of operations, etc. Sustained single event functional interrupts may be resumed by a power cycle or a reset command.
5. The method for detecting the single event effect of the Flash memory according to claim 1, wherein the method comprises the following steps:
the single event latchup criterion in step four is as follows:
single event latchup is caused by the activation of parasitic thyristors, which manifests as a continuous increase in operating current. During normal operation of the device, internal bus contention may be caused by logic state switching in the control circuit and the register, which may cause sudden increase of device current, and the operating current may also be increased due to interruption of the single event function. Unlike single event latchup, these current peaks caused by particle incidence have a short duration, and the operating current can be self-restored to normal. And the power supply is cut off when the current is larger than a set threshold value by detecting the working current of the device, so that the circuit is prevented from being damaged by single event latch-up.
6. The method for detecting the single event effect of the Flash memory according to claim 1, wherein the method comprises the following steps:
the data mode detection in the second, third and fourth steps is as follows:
the Flash memory writes 0 according to the memory address and erases (writes 1) according to the sector, and the common single event effect detection data mode can select a pseudo-random sequence and a complementary sequence thereof for simulating real data, and can also select all 0 and all 1, a checkerboard and an inverse checkerboard.
Most experimental results show that the memory cell will only cause a 0 to 1 flip, while the peripheral circuits will cause 0 to 1 and 1 to 0 flips, so the all 0 mode is the worst case for single bit errors. But since the all 0 mode cannot detect a 1 to 0 flip by the peripheral circuit, a checkerboard and random sequence are used in most detections, with errors from 1 to 0 indicating that the error is coming from the peripheral circuit. After irradiation, all data patterns can be used to test the dut to determine if it has failed, table 1 shows the test data patterns and their applicability.
TABLE 1 data schema and applicability
7. The method for detecting the single event effect of the Flash memory according to claim 1, wherein the method comprises the following steps:
the data analysis and processing operations in the second, third and fourth steps are as follows:
the probability of a single event effect occurring is generally expressed in cross section and is defined as:
wherein sigma is the single event effect cross section and the unit is cm2The larger the cross section, the poorer the device's ability to resist single event effects. N is the frequency of a certain effect of the device; phi is the particle fluence, which is the number of incident particles per unit area, in cm-2(ii) a Theta refers to an included angle between the incident direction of ions and the vertical direction of the device; Φ cos θ is the total number of particles incident normal to the surface of the device.
Curve fitting is typically performed using the Weibull function.
Wherein σhiShowing the flip cross-section caused by heavy ions, LET showing the energy accumulated by heavy ions in a unit sensitive area, LETthRepresenting the minimum energy value, σ, required for heavy ions to cause a single event effectsatDenotes the flip saturation cross section, W and S denote the shape parameters of the Weibull function.
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| CN114090327A (en) * | 2022-01-20 | 2022-02-25 | 浙江吉利控股集团有限公司 | Single-particle error processing method, system and device |
| CN114090327B (en) * | 2022-01-20 | 2022-05-17 | 浙江吉利控股集团有限公司 | Single-particle error processing method, system and device |
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