CN113010929B - Method for constructing physical model of storage unit and obtaining single event upset section - Google Patents
Method for constructing physical model of storage unit and obtaining single event upset section Download PDFInfo
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Abstract
The invention discloses a method for constructing a physical model of a storage unit and acquiring a single-event upset section, which comprises the following steps: the method comprises the steps of obtaining an equal-scale scaling coefficient K of a template memory and a memory to be tested, wherein the memory to be tested and the template memory strictly follow an equal-scale scaling principle; determining a modeling parameter of a to-be-tested storage unit of the to-be-tested storage according to the parameter of the template storage and the equal scaling coefficient K, wherein the to-be-tested storage unit is one storage unit in the to-be-tested storage; and constructing a physical structure model of the storage unit to be tested according to the modeling parameters of the storage unit to be tested. The scheme provided by the patent is simple and easy to operate, short in time and free from irreversible damage to the device.
Description
Technical Field
The invention relates to a single event upset test method of a memory, in particular to a method for constructing a physical model of a memory cell and acquiring a single event upset section.
Background
In an aerospace task, a large number of radiation particles and cosmic rays exist in space, and generate a large number of electron-hole pairs in a memory, and the continuous accumulation of the electron-hole pairs can cause the potential state of a storage unit in the memory to jump. Therefore, the computer simulation of the memory has great significance, the reliability of the memory in a space irradiation environment can be evaluated, and the damage mechanism of the memory can be researched, so that the irradiation resistance reinforcement suggestion is provided for the manufacturing process of the memory, and the safe execution of the space mission is ensured.
Computer simulation of a memory requires at least two types of data to be acquired: the first type: constructing a physical geometric structure model of the storage unit; the second type: the single particle within the sensitive volume flips a critical charge or critical energy.
At present, the first kind of data is mostly obtained by longitudinally cutting a memory and determining the material components of the memory by using a phase analysis means of X-ray diffraction (XRD); and observing the geometrical shape of the material by using a shape analysis method such as a Scanning Electron Microscope (SEM) and an Optical Microscope (OM). This method is time consuming and causes irreversible damage to the memory, and is therefore not suitable for new and expensive memories.
Disclosure of Invention
Objects of the invention
The invention aims to provide a method for constructing a physical model of a storage unit and acquiring a single-particle upset cross section, which aims to solve the technical problem of irreversible damage to a memory.
(II) technical scheme
In order to solve the above problems, the present invention provides a method for constructing a physical model of a memory cell, the method includes obtaining an equal scaling coefficient K of a template memory and a memory to be tested, wherein the memory to be tested and the template memory both strictly follow the equal scaling principle;
Determining a modeling parameter of a to-be-tested storage unit of the to-be-tested storage according to the parameter of the template storage and the equal scaling coefficient K, wherein the to-be-tested storage unit is one storage unit in the to-be-tested storage;
and constructing a physical structure model of the storage unit to be tested according to the modeling parameters of the storage unit to be tested.
In some other embodiments, the obtaining the scaling factors K of the template memory and the memory to be tested includes: obtaining the size f of the memory to be testeds1(ii) a Obtaining the size f of the memory to be testeds1Corresponding size f of the stencil memorys0(ii) a The formula for calculating the equal scaling coefficient K is as follows:
K＝fs0/fs1。
in some other embodiments, the obtaining and the size f of the memory under tests1Corresponding size f of the stencil memorys0The method comprises the following steps: one or more of an area of the template memory, a length of the template memory, a height of the template memory, and a volume of the template memory are obtained. Acquiring the size f of the memory to be testeds1The method comprises the following steps: and acquiring one or more of the area of the memory to be tested, the length of the memory to be tested, the height of the memory to be tested and the volume of the memory to be tested.
In some other embodiments, the obtaining the size f of the memory under tests1The method comprises the following steps:
and acquiring the length of the channel of the storage unit to be tested, the length of the storage unit to be tested or the width of the storage unit to be tested. Obtaining the size f of the memory to be testeds1Corresponding size f of the stencil memorys0The method comprises the following steps: acquiring the channel length of a template storage unit of the template memory, the length of the template storage unit or the width of the template storage unit; wherein the template storage unit is one of the storage units of the template memory.
In some other embodiments, the obtaining the size f of the memory under tests1The method comprises the following steps:
and acquiring the channel length of the storage unit to be detected, the length of the storage unit to be detected or the width of the storage unit to be detected through an optical microscope or a scanning electron microscope.
In some other embodiments, the modeling parameters include: the length of the sensitive body of the memory cell that awaits measuring the width of the sensitive body of the memory cell that awaits measuring the height of the sensitive body of the memory cell that awaits measuring with the position of the sensitive body of the memory cell that awaits measuring, the length of the memory cell that awaits measuring the width of the memory cell that awaits measuring, and the element composition distribution of the longitudinal section of the memory cell that awaits measuring with the element composition thickness of the longitudinal section of the memory cell that awaits measuring.
In some other embodiments, the length of the sensitive body of the memory cell to be tested is denoted as X1Then X1＝X0K, wherein X0: the length of the sensitive body of the template storage unit; the width of the sensitive body of the memory cell to be tested is recorded as Y1Then Y is1＝Y0K, wherein Y0: the width of the sensitive body of the template storage unit; the height of the sensitive body of the memory cell to be tested is recorded as Z1Then Z is1＝Z0K, wherein Z0: the height of the sensitive volume of the template storage unit; length x of the memory cell under test1Then x1＝x0K, wherein x0: the length of the template storage unit; width y of the memory cell under test1Then y is1＝y0K, wherein y0: the width of the template storage unit.
According to another aspect of the present invention, based on the foregoing embodiment, after the step of constructing a physical structure model of the memory cell to be tested according to the element component distribution of the longitudinal section of the memory cell to be tested, the element component thickness of the longitudinal section of the memory cell to be tested, the sensitive volume of the memory cell to be tested, and the bottom area of the memory cell to be tested, the method for obtaining a single-particle upset cross section further includes: obtaining critical energy of the storage unit to be tested; establishing a particle transport model; setting a particle source and emitting N particles to a sensitive body of the storage unit to be detected; counting the deposition energy of each particle in the storage unit to be tested; counting the total number N of single event upset events seuWherein a single event upset event is recorded when one of said particles causes said deposition energy to be greater than said critical energy; according to the formula sigma-Nseu/N·S1Calculating a single-particle upset section sigma, wherein sigma: single event upset cross section, S1: bottom area of the memory cell to be tested, S1＝x1*y1。
In some other embodiments, the critical energy is determined from a critical energy of the template memory and the scaling factor K or the critical energy is determined from a critical charge of the template memory and the scaling factor K.
In some other embodiments, said determining said critical energy from a critical energy of said template memory and said scaling factor K or determining said critical energy from a critical charge of said template memory and said scaling factor K comprises;
the critical energy is recorded as E1Then E is1＝22.5×Qc0/K2(MeV/pC)。
In other embodiments, the parameters of the template memory are obtained from literature or from prior experimental data.
(III) advantageous effects
Therefore, the method comprises the step of obtaining the equal scaling coefficients K of the template memory and the memory to be tested, wherein the memory to be tested and the template memory strictly follow the equal scaling principle. And determining a modeling parameter of a storage unit to be tested of the memory to be tested according to the parameter of the template memory and the equal-scale scaling coefficient K, wherein the storage unit to be tested is one of the storage units in the memory to be tested. And constructing a physical structure model of the storage unit to be tested according to the modeling parameters of the storage unit to be tested. The memory to be tested is not cut longitudinally, and then the material composition of the memory is determined by utilizing a phase analysis means of X-ray diffraction (XRD). And observing the geometrical shape of the memory material by using a topography analysis method such as a Scanning Electron Microscope (SEM) and an Optical Microscope (OM), and the like, thereby determining a geometrical structure longitudinal cutting diagram of the memory material to be tested to construct a simulation model. Obviously, the scheme provided by the patent is simple and easy to operate, has short time and cannot cause irreversible damage to the device.
Drawings
FIG. 1 is a diagram of a method for constructing a physical model of a storage unit in accordance with the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings in conjunction with the following detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
Based on this, the invention provides a method for constructing a physical model of a storage unit, which comprises the following steps: and acquiring an equal-scale scaling coefficient K of a template memory and a memory to be tested, wherein the memory to be tested and the template memory strictly follow the equal-scale scaling principle.
In the implementation, the geometric scaling coefficient is calculated through the template memory parameter and the memory parameter to be measured, and obviously, the geometric scaling coefficient can also be obtained through other methods, for example, scaling is performed according to the geometric scaling coefficient K when the memory is prepared, and a scaling coefficient reference table exists originally. In this embodiment, the parameters and the manufacturing process of the template memory are known, where the memory to be tested and the template memory both strictly follow the equal scaling principle, and strictly follow the equal scaling principle means that the corresponding parameters, such as size, voltage, and doping concentration, need to be accurately divided by the equal scaling factor to ensure that the performance of the template memory is not changed.
Dimensional parameters include area, volume, thickness, and the like. The parameters of the template memory also include other parameters such as critical charge, critical energy, capacitance, and voltage.
The template memory parameters refer to the same parameter types used for calculating the equal-proportion scaling coefficient K, for example, when the equal-proportion scaling coefficient K is calculated, the parameters of the template memory use the doping concentration, and the memory to be tested also uses the doping concentration. Similarly, if the bottom area of the template storage unit is used as the parameter of the template storage, the bottom area of the storage unit to be tested is also used as the parameter of the template storage. The principle of choice of parameters here is that the template memory parameters are known and the memory parameters are readily available.
And determining a modeling parameter of a storage unit to be tested of the memory to be tested according to the parameter of the template memory and the equal-scale scaling coefficient K, wherein the storage unit to be tested is one of the storage units in the memory to be tested.
In the present embodiment, the modeling parameter may be a surface of a storage unit, a vertex coordinate value, a length, a width, a height, an element composition distribution of the storage unit, or the like, and may be arbitrarily selected. The calculation mode of the specific parameter is also flexible and changeable, for example, when the volume of the sensitive body of the storage unit to be measured is calculated, the parameter of the template memory can be the side length and the volume of the sensitive body of the template storage unit of the template memory or the coordinate value in the three-dimensional building standard, the base area of the storage unit to be measured can be calculated in the same way, and the element component thickness of the longitudinal section of the storage unit to be measured can be calculated in the same way.
In this embodiment, the memory cell to be tested is one of the memory cells in the memory to be tested; the template storage unit is one of the storage units in the template memory, and does not specifically specify which storage unit. The memory unit is preceded by a "template" merely to indicate that the memory unit belongs to a template memory; similarly, the memory cell is referred to as "under test" only to indicate that the memory cell belongs to the memory under test, only to distinguish the source of the memory cell, and has no other meaning.
Specifically, the method provided by the present invention can be simulated by using kits such as MCNP, EGS, genant 4, ITS, and the like. In this embodiment, the kit of genant 4 is used, and genant 4 is a three-dimensional monte carlo simulation kit for the transfer of elementary particles from thermal energy to energy, taking into account space and cosmic ray applications, radiation calculations, and the requirements of medical applications, etc.
The simulation test steps of GEANT4 are as follows:
1. constructing a physical geometric model: the physical geometry model of the memory cell is built, and at this time, the material and position of each metal wiring layer and substrate Si and sensitive body in the memory cell need to be input into the genant 4.
2. Selecting a physical process: the physical process describes how the particles interact with the physics. Geant4 provides 7 general classes of physical processes. And selecting a physical process according to the simulation requirement.
3. Setting a particle source: setting the incident particle type, the particle incident direction, the particle energy and the position of the particle source.
4. Outputting the physical quantity needing statistics: GEANT4 may output the following statistical physical quantities
Total number of particles N, type of incident particles, initial energy of particles, and number of single-particle upset N of sensitive bodyseuPhysical reaction type and number, secondary particle information, etc.
The simulation process of GEANT4 is as follows: when the particles are incident into the physical geometric model, corresponding nuclear reaction processes occur with different materials, and deposition energy and secondary particles can be generated. When the deposition energy in the sensitive body is larger than the critical energy of the memory cell, the storage bit of the sensitive body is overturned. Data such as the energy deposited by different metal wiring layers, the type and the quantity of generated secondary particles, the single-particle upset cross section and the like can be obtained through simulation of GEANT 4.
Therefore, the equal-proportion scaling coefficient K can be calculated through the existing or easily measured parameters of the template memory and the corresponding parameters of the memory, and then the sensitive volume of the storage unit to be measured and the bottom area of the storage unit to be measured are calculated according to the equal-proportion scaling coefficient K and the parameters of the template memory, and the element component distribution of the longitudinal section of the storage unit to be measured and the element component thickness of the longitudinal section of the storage unit to be measured are used for constructing the simulation model. Avoiding longitudinally cutting the memory to be tested, and then determining the material composition of the memory by utilizing a phase analysis means of X-ray diffraction (XRD). And observing the geometrical shape of the memory material by using a topography analysis method such as a Scanning Electron Microscope (SEM) and an Optical Microscope (OM), and the like, thereby determining a geometrical structure longitudinal cutting diagram of the memory material to be tested to construct a simulation model. Obviously, the scheme provided by the patent is simple and easy to operate, has high efficiency and cannot cause irreversible damage to the device.
In some other embodiments, the obtaining of the equal ratio of the template memory and the memory to be testedExample scaling factors K include: obtaining the size f of the memory to be testeds1(ii) a Obtaining the size f of the memory to be testeds1Corresponding size f of the stencil memorys0. The formula for calculating the equal scaling coefficient K is as follows:
K＝fs0/fs1。
because the size can be obtained by the appearance of the manufactured device, the method is suitable for the semiconductor device to be tested which is in operation or stops production but does not record other process parameters, and the longitudinal cutting of the semiconductor device is avoided. The correspondence here means that the size is the same, for example, when calculating the equal scaling factor K, if the size f of the memory to be measureds1The area of the unit to be tested of the memory to be tested, the size f of the template memorys0Is the area of the template storage unit of the template memory.
In some other embodiments, the obtaining and the size f of the memory under tests1Corresponding size f of the stencil memorys0The method comprises the following steps: one or more of an area of the stencil memory, a length of the stencil memory, a height of the stencil memory, and a volume of the stencil memory is obtained. Acquiring the size f of the memory to be tested s1The method comprises the following steps: and acquiring one or more of the area of the memory to be tested, the length of the memory to be tested, the height of the memory to be tested and the volume of the memory to be tested.
In this embodiment, the device internal parameters can be obtained by calculating the geometric scaling factor K by obtaining the memory size. All the parameters of the storage unit of the device to be tested can be deduced from all the parameters of the storage unit of the template memory only by acquiring the corresponding size relation and the like of the storage unit, and the method is simple, convenient and quick.
In some other embodiments, the obtaining the size f of the memory under tests1The method comprises the following steps: and acquiring the length of the channel of the storage unit to be tested, the length of the storage unit to be tested or the width of the storage unit to be tested. Obtaining the size f of the memory to be testeds1Corresponding size f of the stencil memorys0The method comprises the following steps: and acquiring the channel length of a template storage unit of the template memory, the length of the template storage unit or the width of the template storage unit. Wherein the template storage unit is one of the storage units of the template memory.
The dimensions, especially the channel length, are more representative of the dimensions of the memory cell, and the calculation results are more accurate and easily obtained.
In some other embodiments, the obtaining the size f of the memory under tests1The method comprises the following steps: and acquiring the channel length of the storage unit to be detected, the length of the storage unit to be detected or the width of the storage unit to be detected through an optical microscope or a scanning electron microscope. The optical microscope or the scanning electron microscope has high resolution, small error and easily obtained experimental data.
In some other embodiments, the modeling parameters include: the length of the sensitive body of the memory cell that awaits measuring the width of the sensitive body of the memory cell that awaits measuring the height of the sensitive body of the memory cell that awaits measuring with the position of the sensitive body of the memory cell that awaits measuring, the length of the memory cell that awaits measuring the width of the memory cell that awaits measuring, and the element composition distribution of the longitudinal section of the memory cell that awaits measuring with the element composition thickness of the longitudinal section of the memory cell that awaits measuring. It is clear that this is not the only type of modeling parameter, but it can also be modeled by other parameters, such as area, volume or coordinate values.
In some other embodiments, the length of the sensitive body of the memory cell to be tested is denoted as X1Then X1＝X0K, wherein X0: the length of the sensitive body of the template storage unit; the width of the sensitive body of the memory cell to be tested is recorded as Y 1Then Y is1＝Y0K, wherein Y0: the width of the sensitive body of the template storage unit; the height of the sensitive body of the memory cell to be tested is recorded as Z1Then Z is1＝Z0K, wherein Z0: the height of the sensitive volume of the template storage unit; length x of the memory cell under test1Then x1＝x0K, wherein x0: the length of the template storage unit; width y of the memory cell under test1Then y is1＝y0K, wherein y0: the width of the template storage unit.
In some other embodiments, the determining, according to the parameter of the template memory and the equal scaling factor K, the sensitive volume of the memory unit to be tested of the memory to be tested and the bottom area of the memory unit to be tested, and the element component distribution of the longitudinal section of the memory unit to be tested and the element component thickness of the longitudinal section of the memory unit to be tested includes: obtaining the bottom area S of the template storage unit0(ii) a The bottom area of the memory cell to be tested is recorded as S1Then S is1＝S0/K2。
It is obvious that in the present embodiment, the equal scaling factor K is calculated by one-dimensional parameters, such as length, width, height, and the like, among the parameters of the template memory. Obtaining the base area of the two-dimensional data storage unit to be tested through one-dimensional data calculation and recording the base area as S 1Or the sensitive volume of the storage unit to be measured of the three-dimensional data is recorded as V1This approach is computationally simple and not prone to error.
In other embodiments, the patent further provides a method for obtaining a single-event upset cross section, where based on the foregoing example, the method includes: the method further comprises the following steps of constructing a physical structure model of the storage unit to be tested according to the element component distribution of the longitudinal section of the storage unit to be tested, the element component thickness of the longitudinal section of the storage unit to be tested, the sensitive volume of the storage unit to be tested and the bottom area of the storage unit to be tested: obtaining critical energy of the storage unit to be tested, establishing a particle transport model, setting a particle source, emitting N particles to a sensitive body of the storage unit to be tested, counting deposition energy of each particle in the storage unit to be tested, and counting the total number N of single-particle upset eventsseuWherein one of said particles causing said deposition energy to be greater than said critical energy is recorded as a single event upset event according to the formula σ Nseu/N·S1Calculating a single-particle upset section sigma, wherein sigma: single event upset cross section, S1: the bottom area of the memory cell to be tested. In this embodiment, N is a natural number of 1 or more, and S is 1＝x1*y1。
Based on the analysis, it is obvious that the calculation method for calculating the single-particle upset section provided by the patent is simple and easy to operate, has high efficiency, and cannot cause irreversible damage to a device.
In other embodiments, the critical energy is determined from a critical energy of the template memory and the scaling factor K or the critical energy is determined from a critical charge of the template memory and the scaling factor K.
Compared with the prior art, the single-event upset cross-section curve of the memory is obtained through a single-event effect ground simulation test, and the single-event upset critical charge is extracted according to the curve; or a single-particle upset cross-section curve of the memory is obtained by establishing a weighted sensitive volume model of the memory and carrying out particle transport calculation, single-particle upset critical charge and the like are extracted based on the cross-section curve, and then critical energy is calculated. The calculation method provided by the embodiment can calculate the equal-scale scaling coefficient K through simple and easily-obtained data, and obtains the critical energy through calculation, so that the method is simple and easily-obtained, a large amount of experiments are avoided, manpower and material resources are saved, and the efficiency is higher.
In some other embodiments, the determining the critical energy according to the critical energy of the template memory and the constant scaling factor K or the determining the critical energy according to the critical charge of the template memory and the constant scaling factor K includes: obtaining critical charge Q of the template memory cellc0(ii) a The critical energy is denoted as E1Then, then
E1＝22.5×Qc0/K2(MeV/pC)。
Specifically, the capacitance calculation formula of the sensitive body of the known memory cell to be measured is as follows:
wherein Q isc0: threshold charge of the template memory cell; c0: capacitance of a sensitive body of the template memory cell; u shape0(ii) a The voltage of the sensitive body of the template memory cell; epsilon: a dielectric permittivity; epsilon0: absolute dielectric constant in vacuum; t is t0: the height of the sensitive volume of the template storage unit; a. ther0: area of the sensitive volume of the template storage unit; k: scaling coefficient in equal proportion; a. ther1: the area of a sensitive body of the memory cell to be tested; t is t1: the height of the sensitive body of the memory unit to be tested; u shape1: the voltage of a sensitive body of the memory cell to be tested; c1: the capacitance of the sensitive body of the storage unit to be tested; qc1: the threshold charge of the memory cell under test.
The substrate material of the memory is Si, which is known to require 3.6eV of deposition energy for each electron-hole pair generation, so that the critical energy E of the memory cell to be tested can be obtained from the critical charge amount of the template memory cell 1The specific calculation formula is as follows:
wherein q iseIs an electron charge amount of 1.6X 10-19C, simplifying the formula:
E1＝Qc1×22.5(MeV/pC)
will Qc1Brought into the above formula
E1＝22.5×Qc0/K2(MeV/pC)
In other embodiments, the parameters of the template memory are obtained from literature or from prior experimental data. It is clear that the required data can be easily obtained in this way, and the data for calculating the equal scaling factor K can be easily obtained by looking up the literature, as well as the data for constructing the model and calculating the critical energy.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explaining the principles of the invention and are not to be construed as limiting the invention. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.
The steps in the embodiments of the present invention may be sequentially adjusted, combined, and deleted according to actual needs.
Claims (6)
1. A method of constructing a physical model of a storage unit, comprising:
Obtaining an equal-scale scaling coefficient K of a template memory and a memory to be tested, wherein the memory to be tested and the template memory strictly follow an equal-scale scaling principle;
determining a modeling parameter of a to-be-tested storage unit of the to-be-tested storage according to the parameter of the template storage and the equal scaling coefficient K, wherein the to-be-tested storage unit is one storage unit in the to-be-tested storage;
constructing a physical structure model of the storage unit to be tested according to the modeling parameters of the storage unit to be tested;
the obtaining f s1 a size of the memory under test includes:
acquiring the channel length of the storage unit to be tested, the length of the storage unit to be tested or the width of the storage unit to be tested;
the obtaining f s0 a size of the template memory corresponding to the size f s1 of the memory under test comprises:
acquiring the channel length of a template storage unit of the template memory, the length of the template storage unit or the width of the template storage unit; wherein the template storage unit is one of the storage units of the template memory;
the modeling parameters include: the length of the sensitive body of the storage unit to be tested, the width of the sensitive body of the storage unit to be tested, the height of the sensitive body of the storage unit to be tested, the position of the sensitive body of the storage unit to be tested, the length of the storage unit to be tested, the width of the storage unit to be tested, the element component distribution of the longitudinal section of the storage unit to be tested and the element component thickness of the longitudinal section of the storage unit to be tested;
And the length of the sensitive body of the memory cell to be tested is recorded as X1, then X1 is X0/K, wherein X0: the length of the sensitive body of the template storage unit;
and the width of the sensitive body of the memory cell to be tested is marked as Y1, then Y1 is Y0/K, wherein Y0: a width of a sensitive volume of the template storage unit;
and the height of the sensitive body of the memory unit to be tested is recorded as Z1, and then Z1 is Z0/K, wherein Z0: the height of the sensitive volume of the template storage unit;
and the length x 1 of the memory cell to be tested is x 1 ═ x 0/K, wherein x 0: the length of the template storage unit;
and the width y 1 of the memory cell to be tested is y 1 ═ y 0/K, wherein y 0: the width of the template storage unit.
2. The method of claim 1, wherein the obtaining the scaling coefficients K of the template memory and the memory under test comprises:
obtaining f s1 a size of the memory to be tested;
obtaining a size f s0 of the template memory corresponding to the size f s1 of the memory to be tested;
the formula for calculating the equal scaling coefficient K is as follows:
K＝f s0 /f s1 。
3. the method of claim 2,
and acquiring the channel length of the storage unit to be detected, the length of the storage unit to be detected or the width of the storage unit to be detected through an optical microscope or a scanning electron microscope.
4. A method for obtaining a single-event upset cross section, comprising the method according to any one of claims 1 to 3, wherein after the step of constructing a physical structure model of the memory cell under test according to the modeling parameters of the memory cell under test, the method further comprises:
obtaining critical energy of the storage unit to be tested;
establishing a particle transport model;
setting a particle source and emitting N particles to a sensitive body of the storage unit to be detected;
counting the deposition energy of each particle in the storage unit to be tested;
counting the total number N seu of the single event upset events, wherein one particle causes the deposition energy to be larger than the critical energy and is recorded as a single event upset event;
calculating a single-particle upset section sigma according to a formula sigma-N seu/N-S1, wherein sigma: single event upset cross section, S1: and the bottom area of the memory cell to be tested is S1 ═ x 1 × y 1.
5. The method of claim 4, wherein obtaining the threshold energy of the memory cell under test comprises:
and determining the critical energy according to the critical energy of the template memory and the equal-proportion scaling coefficient K or determining the critical energy according to the critical charge of the template memory and the equal-proportion scaling coefficient K.
6. The method of claim 5, wherein determining the critical energy from the critical energy of the template memory and the scaling factor K or determining the critical energy from the critical charge of the template memory and the scaling factor K comprises:
obtaining a threshold charge Q c0 for the template memory cell;
when the critical energy is denoted as E1, E1 is 22.5 × Q c 0/K2 (MeV/pC).
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