CN113009743B - Pixel structure and display panel - Google Patents
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- CN113009743B CN113009743B CN202110207217.XA CN202110207217A CN113009743B CN 113009743 B CN113009743 B CN 113009743B CN 202110207217 A CN202110207217 A CN 202110207217A CN 113009743 B CN113009743 B CN 113009743B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
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Abstract
The application provides a pixel structure and a display panel, the pixel structure includes a first scanning line and a second scanning line, the first scanning line and the second scanning line are arranged in parallel, an active layer is arranged between the first scanning line and the second scanning line, the first scanning line has a main portion and a protruding portion connected with the main portion, the protruding portion extends from the main portion to the second scanning line, and the protruding portion crosses over the active layer. The application provides a novel pixel structure, when the bright spot appears in display panel, can improve the repairing effect effectively through breaking the active layer.
Description
Technical Field
The application relates to the technical field of display, in particular to a pixel structure and a display panel.
Background
The manufacturing process of the display panel comprises a plurality of manufacturing process technologies and a transfer program, a plurality of particles can be generated in the manufacturing process, most of the particles can be cleaned by a cleaning machine, but a little of the particles can remain in the display panel, and then the display picture of the display panel has the defects of bright spots and the like.
In order to ensure the quality of the display panel and improve the sensory perception of human eyes, bright spots cannot exist in the display panel, and therefore, the bright spots need to be repaired into dark spots by a laser method. However, the pixel structure in the prior art limits the bright point repairing effect of the display panel.
Disclosure of Invention
The application provides a pixel structure and a display panel to solve the technical problem that the pixel structure in the prior art limits the bright point repairing effect of the display panel.
The application provides a pixel structure, which comprises a first scanning line and a second scanning line, wherein the first scanning line and the second scanning line are arranged in parallel, an active layer is arranged between the first scanning line and the second scanning line, the first scanning line is provided with a main part and a convex part, the convex part extends from the main part to the second scanning line, and the convex part crosses over the active layer
In the pixel structure provided by the application, if the pixel structure displays a bright spot, the active layer corresponding to the bright spot is cut off so as to convert the bright spot into a dark spot.
In the pixel structure provided by the present application, the active layer includes a repair portion, and the protrusion portion has an opening, where the opening is disposed corresponding to the repair portion.
In the pixel structure provided by the application, the length of the opening is 2 micrometers to 3 micrometers, and the width of the opening is 1.5 micrometers to 3 micrometers.
In the pixel structure provided by the present application, the trunk portion includes a first trunk portion and a second trunk portion, and the protrusion portion includes a first branch and a second branch;
the first branch is connected with the first main part, the second branch is connected with the second main part, and one end of the first branch far away from the first main part is connected with one end of the second branch far away from the second main part;
the first branch and the second branch both cross over the active layer, the part of the first branch, which is overlapped with the active layer, is a first grid electrode, the part of the second branch, which is overlapped with the active layer, is a second grid electrode, and the repair part is positioned between the first grid electrode and the second grid electrode.
In the pixel structure provided by the present application, the protrusion portion further includes a third branch, and an end of the first branch away from the first main portion is connected to an end of the second branch away from the second main portion through the third branch.
In the pixel structure provided by the application, the active layer is arranged in parallel with the main portion, and the active layer is linear.
In the pixel structure provided by the application, the active layer further comprises a first functional part and a second functional part, and the first functional part and the second functional part are connected through the repair part;
the width of the repair portion is smaller than the width of the first functional portion, and/or the width of the repair portion is smaller than the width of the second functional portion.
In the pixel structure provided by the application, the pixel structure further comprises a black matrix, and the black matrix at least covers the first scanning line, the second scanning line and the active layer;
the black matrix is provided with a first side edge, the first side edge faces the active layer and is internally concave to form a notch, and the shape of the notch is matched with that of the protruding part.
The application also provides a display panel, which comprises the pixel structure.
The application provides a novel pixel structure, in this pixel structure, through setting up the active layer between first scanning line and second scanning line for the active layer is injectd in current sub-pixel unit, if sub-pixel unit shows for the bright spot, then cuts off the active layer in order to change the bright spot into when the dim spot, can not exert an influence to adjacent sub-pixel unit, thereby has improved display panel's bright spot repair effect.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic diagram of a first planar structure of a pixel structure provided in the present application;
FIG. 2 is a schematic view of a first structure of the active layer and the first scan line of FIG. 1;
FIG. 3 is a schematic diagram of a second structure of the active layer and the first scan line in FIG. 1;
FIG. 4 is a schematic diagram of a second planar structure of a pixel structure provided herein;
fig. 5 is a schematic structural view of the active layer and the first scan line in fig. 4;
fig. 6 is a schematic diagram of a third planar structure of a pixel structure provided in the present application;
fig. 7 is a schematic structural view of the active layer and the first scan line in fig. 6;
FIG. 8 is a schematic diagram of a fourth planar structure of a pixel structure provided herein;
FIG. 9 is a schematic cross-sectional view of the pixel structure of FIG. 1;
fig. 10 is a schematic structural diagram of a display panel provided in the present application;
fig. 11 is a timing diagram of clock signals of the GOA circuit in fig. 10.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 1, fig. 1 is a schematic view of a first planar structure of a pixel structure provided in the present application. As shown in fig. 1, in the embodiment of the present application, the pixel structure 100 includes a first scan line 30 and a second scan line 20. The first scan line 30 and the second scan line 20 are disposed in parallel. The active layer 10 is disposed between the first scan line 30 and the second scan line 20. The first scanning line 30 has a trunk portion 31 and a convex portion 32. The protrusion 32 extends from the main stem 31 toward the second scan line 20, and the protrusion 32 crosses the active layer 10.
In the embodiment of the present application, the pixel structure 100 further includes a data line 40, a source 41, a drain 42, a black matrix 50, and a pixel electrode 60. The data line 40 intersects with the first scan line 30 and the second scan line 20 to form a sub-pixel unit a. The source 41 and the drain 42 are both connected to the active layer 10. Specifically, a source contact region and a drain contact region (not shown) are disposed at two ends of the active layer 10, the source 41 is connected to the source contact region through a contact via, and the drain 42 is connected to the drain contact region through a contact via. The drain electrode 42 is connected to the pixel electrode 60 through a contact via hole. The portion of the protrusion 32 overlapping the active layer 10 serves as a gate electrode. The black matrix 50 is used to cover the first scan line 30, the second scan line 20, the data line 40, and other signal traces, so as to prevent color mixing between adjacent sub-pixel units a.
In the embodiment of the present application, the material of the active layer 10 may be single crystal silicon, low temperature polysilicon, or metal semiconductor oxide, which is not particularly limited in the present application.
In the embodiment of the present application, the material of the pixel electrode 60 may be one or more of transparent conductive materials such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, and the like, which is not particularly limited in this application.
In the embodiment of the present invention, the material of the first scan line 30, the second scan line 20, the source electrode 41, the drain electrode 42, and the data line 40 may be one or more of conductive metals such as aluminum, molybdenum, copper, chromium, and nickel, which is not particularly limited in this application.
The embodiment of the present application provides a novel pixel structure 100, and by designing the first scan line 30 as a bending pattern including the trunk portion 31 and the protrusion portion 32, and using the overlapped portion of the protrusion portion 32 and the active layer 10 as a gate, the pixel structure 100 is effectively simplified, and meanwhile, the aperture ratio of the sub-pixel unit a is improved. In addition, in the pixel structure 100, the active layer 10 is limited in the current sub-pixel unit a by arranging the active layer 10 between the first scanning line 30 and the second scanning line 20, and if the sub-pixel unit a displays a bright point, when the corresponding active layer 10 is cut off to convert the bright point into a dark point, no influence is exerted on the adjacent sub-pixel unit a, so that the bright point repairing effect of the display panel is improved.
It should be noted that, in the embodiment of the present application, the second scan line 20 and the first scan line 30 have the same structure, and are not described herein again. In addition, it should be understood by those skilled in the art that the pixel structure 100 includes a plurality of sub-pixel units a arranged in an array, and the structure of each sub-pixel unit a is the same.
Furthermore, in the description of the embodiments of the present application, it should be understood that the terms "first", "second", and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features.
Referring to fig. 1 and fig. 2, fig. 2 is a schematic view of a first structure of the active layer and the first scan line in fig. 1. The active layer 10 includes a repair portion 11. The projection 32 has an opening 320. The opening 320 is provided corresponding to the repair portion 11. If the sub-pixel unit a shows a bright spot, the repair portion 11 corresponding to the bright spot is cut off to turn the bright spot into a dark spot.
It can be understood that in the pixel structure 100, the protruding portion 32 is made of a non-transparent conductive material, and when the repairing portion 11 is subjected to a disconnection operation, the protruding portion 32 may generate visual interference, thereby affecting the accuracy of the bright point repairing of the display panel. Therefore, the embodiment of the present application can improve the accuracy of the bright point repair of the display panel by providing an opening 320 in the protruding portion 32 to expose the repair portion 11.
Specifically, in the embodiment of the present application, the repairing portion 11 is disconnected in a laser manner. That is, the repair portion 11 is irradiated with a light beam of high energy density to turn off the repair portion 11, thereby causing the corresponding sub-pixel cell a to display as a dark spot.
Alternatively, the opening 320 completely exposes the repair portion 11. In the first aspect, the bright point repair accuracy of the display panel can be ensured. In the second aspect, the first scan line 30 can be prevented from being damaged by the energy generated by the laser, so as to ensure that the other sub-pixel units a connected to the first scan line 30 emit light normally. In a third aspect, the complete repair part 11 can be observed to ensure that the repair part 11 is completely broken, thereby improving the bright point repair effect of the display panel.
Further, the length a of the opening 320 is 2 to 3 micrometers, and the width b of the opening 320 is 1.5 to 3 micrometers. Specifically, in an embodiment of the present application, the length a of the opening 320 and the width b of the opening 320 are both 2.5 micrometers. This design reduces the size of the protrusion 32 while avoiding laser damage to the first scan line 30, thereby improving the aperture ratio of the sub-pixel unit a.
Further, in the present embodiment, the active layer 10 is disposed parallel to the trunk portion 31, and the active layer 10 is linear.
Specifically, the active layer 10 further includes a first functional portion 12 and a second functional portion 13, and the first functional portion 12 and the second functional portion 13 are connected by the repair portion 11. The width of the repair portion 11, the first functional portion 12, and the second functional portion 13 is the same.
In addition, the protrusion portion 32 is perpendicular to the main portion 31, and the protrusion portion 32 extends from the main portion 31 toward the pixel electrode 60. The trunk portion 31 is linear. The projection 32 is rectangular. When the first scan line 30 is fabricated, the protrusion 32 and the opening 320 may be formed simultaneously by the same mask, or after the protrusion 32 is formed, the protrusion 32 may be etched to form the opening 320.
Wherein, the portions of the protrusion 32 overlapping the active layer 10 serve as the first gate 3210 and the second gate 3220, respectively. The repair portion 21 is provided to be offset from the first gate 3210 and the second gate 3220.
In the embodiment of the present application, the active layer 10 is linearly arranged, and the widths of the active layer 10 at different positions are consistent, so that the process is simplified, and the aperture ratio of the sub-pixel unit a is improved. Meanwhile, the first scan line 30 has a simple and regular structure, thereby further reducing the difficulty of the process.
Referring to fig. 3, fig. 3 is a schematic diagram of a second structure of the active layer and the first scan line in fig. 1. The difference from the active layer and the scanning line shown in fig. 2 is that, in the present embodiment, the width of the repair portion 11 is smaller than the width of the first functional portion 12, and/or the width of the repair portion 11 is smaller than the width of the second functional portion 13.
It is understood that when the active layer 10 is broken by using the laser method, the first scan line 30 located near the active layer 10 may be damaged by the high-energy beam. Therefore, the width of the repair portion 11 is smaller than the width of the first functional portion 12, and/or the width of the repair portion 11 is smaller than the width of the second functional portion 13, so that the first scanning line 30 can be prevented from being damaged under the condition that the size of the first scanning line 30 and the size of the opening 320 are constant. In addition, since the width of the repair portion 11 is narrow, it is more likely to be broken by laser.
Referring to fig. 4 and 5, fig. 4 is a schematic diagram of a second plane structure of a pixel structure provided in the present application, and fig. 5 is a schematic diagram of the active layer and the first scan line in fig. 4. The difference from the pixel structure 100 shown in fig. 1 is that, in the pixel structure 100 provided in the present embodiment, the trunk portion 31 includes a first trunk portion 311 and a second trunk portion 312. The projection 32 includes a first branch 321 and a second branch 322. The first branch 321 is connected to the first trunk 311. The second branch 322 is connected to the second stem 312. The end of the first branch 321 away from the first main portion 311 is connected to the end of the second branch 322 away from the second main portion 312.
The first branch 321 extends from the first main portion 311 to the second scan line 20. The second branch 322 extends from the second trunk 312 toward the second scan line 20. The first branch 321 and the second branch 322 are both linear.
Wherein the first branch 321 and the second branch 322 both cross the active layer 10. A portion of the first branch 321 overlapping the active layer 10 is a first gate 3210. A portion of the second branch 322 overlapping the active layer 10 is a second gate 3220. The repair portion 21 is located between the first gate 3210 and the second gate 3220.
In the embodiment of the present application, the main portion 31 is composed of the first main portion 311 and the second main portion 322, and the first main portion 311 and the second main portion 322 are disposed at an interval, so that the coverage area of the first scan line 30 is effectively reduced, and the aperture ratio of the sub-pixel unit a is improved. The first gate 3210 and the second gate 3220 are used as a part of the first scan line 30 and are integrally formed with the first scan line 30, so that the process for manufacturing the pixel structure 100 can be reduced. In addition, the overlapping region of the active layer 10 with the first gate 3210 and the second gate 3220 is a channel region, and the non-overlapping region of the active layer 10 with the first gate 3210 and the second gate 3220 is a doped region, so that a plurality of channel regions and doped regions are formed by the overlapping of the first branch 321 and the second branch 322 with the active layer 10, respectively, and the leakage current can be effectively reduced, thereby improving the display effect of the display panel.
In addition, in the description of the embodiments of the present application, it should be noted that the terms "connected" and "connected" are to be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected, unless explicitly stated or limited otherwise; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
For example, in the embodiment of the present application, an end of the first branch 321 away from the first main portion 311 and an end of the second branch 322 away from the second main portion 312 may be directly connected in contact or indirectly connected through an intermediate medium.
Specifically, in some embodiments, with continued reference to fig. 7, protrusion 32 further includes a third branch 323. The end of the first branch 321 away from the first main portion 311 is connected to the end of the second branch 322 away from the second main portion 312 via a third branch 323. The first branch 321 is perpendicular to the first main portion 311. The second branch portion 322 is perpendicular to the second stem portion 312. The third branch 323 is parallel to the first stem 311 and the second stem 312.
In other embodiments, please refer to fig. 6 and fig. 7 simultaneously, in which fig. 6 is a schematic diagram of a third plane structure of the pixel structure provided in the present application, and fig. 7 is a schematic diagram of the active layer and the first scan line in fig. 6. The difference from the pixel structure 100 shown in fig. 4 is that, in the pixel structure 100 provided in the present embodiment, the projection 32 is composed of the first branch 321 and the second branch 322. The end of the first branch 321 away from the first main portion 311 is connected to the end of the second branch 322 away from the second main portion 312.
The first branch 321 is connected to the first trunk 311. The second branch 322 is connected to the second stem 312. The first branch 321 extends from the first trunk 311 to the second scan line 20. The second branch 322 extends from the second trunk 312 toward the second scan line 20.
Specifically, in the direction extending from the first trunk portion 311 to the second scanning line 20, the first branch 321 and the second branch 322 are both in a diagonal shape, so that the first gate 3210 and the second gate 3220 are both in a diagonal shape, and the effective lengths of the first gate 3210 and the second gate 3220 are increased under the condition that the width of the first branch 321 and the width of the second branch 322 are constant. Further, the overlapping portion of the active layer 10 with the first gate 3210 and the second gate 3220 is a channel region, and the channel region is in a diagonal shape. Similarly, under the condition that the width of the first branch 321 and the width of the second branch 322 are constant, the effective length of the channel region is effectively increased, and the leakage current is further reduced.
In another embodiment of the present application, please refer to fig. 8, wherein fig. 8 is a schematic diagram of a fourth plane structure of a pixel structure provided in the present application. The difference from the pixel structure shown in fig. 4 is that in the pixel structure 100 provided in this embodiment, the active layer 10 is a bending pattern.
Specifically, the active layer 10 partially overlaps the data line 40. Since the portion of the active layer 10 overlapping the data line 40 is covered by the data line 40, the aperture ratio of the sub pixel unit a is not affected. Meanwhile, by adjusting the size of the overlapping portion of the active layer 10 and the data line 40, the aspect ratio of the active layer 10 may be adjusted.
Please refer to fig. 1, fig. 4, and fig. 6. In the embodiment of the present application, the shape of the black matrix 50 is adapted to the shape of the first scan line 30.
Specifically, the black matrix 50 has a first side 50 a. In the pixel structure 100 shown in fig. 1, since the trunk portion 31 is linear and the protrusion portion 32 is rectangular, the first side 50a is disposed parallel to the trunk portion 31 to cover the first scan line 30. In the pixel structure 100 shown in fig. 4 and the pixel structure 100 shown in fig. 6, the first side 50a is recessed toward the active layer 10 to form a gap 500, and the shape of the gap 500 is matched with the shape of the protrusion 32.
The black matrix 50 is designed according to the structure of the first scan line 30 in the embodiment of the application, so that the shape of the black matrix 50 is adapted to the shape of the first scan line 30, and the area of the black matrix 50 can be effectively reduced while light mixing between the sub-pixel units a is avoided, thereby improving the aperture ratio of the sub-pixel units a.
Further, please refer to fig. 9. Fig. 9 is a schematic cross-sectional structure diagram of the pixel structure in fig. 1.
Specifically, the pixel structure 100 includes: a substrate 61; a light shielding layer 62 disposed on the substrate 61, wherein the light shielding layer 62 is disposed corresponding to the active layer 10 and is used for preventing the active layer 10 from being irradiated by backlight, thereby affecting the performance of the switching device; a buffer layer 63 provided on the substrate 61 and the light-shielding layer 62; an active layer 10 disposed on the buffer layer 63; a first insulating layer 64 disposed on the active layer 10; a first scan line 30 disposed on the first insulating layer 64, the first scan line 30 including a first gate 3210 and a second gate 3220; a second insulating layer 65 disposed on the first scan line 30 and the first insulating layer 64; the source electrode 41 and the drain electrode 42 are connected to the active layer 10 through contact vias penetrating the first insulating layer 64 and the second insulating layer 65; the data line 40 is disposed at the same layer as the source 41 and the drain 42; a planarization layer 66 disposed on the source electrode 41, the drain electrode 42, the data line 40, and the second insulating layer 65; a common electrode 67 disposed on the planarization layer 66; a passivation layer 68 disposed on the common electrode 67; and a pixel electrode 60 disposed on the passivation layer 68, wherein the pixel electrode 60 is connected to the drain electrode 42 through a via hole penetrating the passivation layer 68 and the planarization layer 66. The common electrode 67 and the pixel electrode 60 overlap to form a first storage capacitor. The common electrode 67 and the pixel electrode 60 correspond to two plates of the first storage capacitor.
It should be noted that this embodiment is only for describing the pixel structure 100 in detail, and is not to be construed as limiting the present application. In this embodiment, the transistor formed by the active layer 10, the first gate 3210, the second gate 3220, the source 41, and the drain 42 has a top-gate structure. In other embodiments, the transistors in the pixel structure 100 may also be a bottom gate structure, which is not described herein.
Accordingly, referring to fig. 10, an embodiment of the present invention further provides a display panel 1000. The display panel 100 includes the pixel structure 100 according to any of the above embodiments, and the pixel structure 100 may refer to the above contents, which are not described herein again.
In addition, the display panel 1000 may be a liquid crystal display panel. The display panel 1000 may further include a GOA circuit 200(Gate driver Array, Array substrate Gate driving technology) and other functional components. The GOA circuit and other functional components in the embodiments of the present application are well known to those skilled in the art, and will not be described herein.
In the embodiment of the present application, when the pixel resolution of the display panel 1000 is high, the GOA circuit 200 may adopt a pre-charge mode in order to ensure the normal charging of the display panel 1000. Fig. 11 shows a timing chart of a clock signal of the GOA circuit. It should be noted that the circuit structure of the GOA circuit 200 and the operation principle thereof are well known to those skilled in the art, and are not described herein again.
Specifically, when the GOA circuit 200 operates in the pre-charge mode, the (n-1) th clock signal CK (n-1) and the (n) th clock signal CK (n) are overlapped, and the (n) th clock signal CK (n) and the (n +1) th clock signal CK (n +1) are overlapped, where n is a positive integer greater than 1.
It can be understood that, since the (n-1) th sub-pixel unit a and the nth sub-pixel unit a are connected to the same data line, when the nth sub-pixel unit a displays a bright point, if the corresponding pixel electrode and the common electrode are laser-shorted by using the conventional repairing method, the data voltage of the (n-1) th sub-pixel unit a is pulled down to 0V in the time period overlapped by the clock signals, thereby reducing the bright point repairing effect of the display panel 1000. In the display panel 1000 provided in the embodiment of the present application, by disconnecting the active layer of the sub-pixel unit a, the data voltage does not flow back; meanwhile, in the pixel structure 100 provided by the embodiment of the present application, the active layer is disposed in the nth sub-pixel unit a, and the disconnection of the active layer does not have a bad influence on the (n-1) th sub-pixel unit a, so that the bright point repairing effect of the display panel 1000 is improved.
The display panel 1000 provided in this embodiment of the application includes a pixel structure 100, where the pixel structure 100 includes a first scan line and a second scan line, the first scan line and the second scan line are disposed in parallel, an active layer is disposed between the first scan line and the second scan line, the first scan line has a main portion and a protruding portion, the protruding portion extends from the main portion to the second scan line, and the protruding portion crosses the active layer. The pixel structure 100 effectively simplifies the pixel structure 100 by designing the first scan line as a bending pattern including a main portion and a protruding portion, and using a portion where the protruding portion overlaps with the active layer as a gate electrode; in addition, the active layer is arranged between the first scanning line and the second scanning line, so that the active layer is limited in the current sub-pixel unit a, and if the sub-pixel unit a displays a bright point, when the corresponding active layer is cut off to convert the bright point into a dark point, the adjacent sub-pixel unit a is not affected, and thus the bright point repairing effect of the display panel 1000 is improved.
The pixel structure and the display panel provided by the present application are described in detail above, and the principles and embodiments of the present application are described herein by applying specific examples, and the description of the above examples is only used to help understanding the method and the core concept of the present application; meanwhile, for a person skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (9)
1. A pixel structure, comprising: the scanning line structure comprises a first scanning line and a second scanning line, wherein the first scanning line and the second scanning line are arranged in parallel, an active layer is arranged between the first scanning line and the second scanning line, the first scanning line is provided with a main part and a convex part connected with the main part, the convex part extends from the main part to the second scanning line, and the convex part crosses the active layer;
the active layer comprises a repair part, the protruding part is provided with an opening, and the opening is arranged corresponding to the repair part.
2. The pixel structure of claim 1, wherein if the pixel structure displays a bright dot, the active layer corresponding to the bright dot is turned off to convert the bright dot into a dark dot.
3. The pixel structure of claim 1, wherein the opening has a length of 2 to 3 microns and a width of 1.5 to 3 microns.
4. The pixel structure of claim 1, wherein the trunk portion comprises a first trunk portion and a second trunk portion, and the protrusion portion comprises a first branch and a second branch;
the first branch is connected with the first main part, the second branch is connected with the second main part, and one end of the first branch far away from the first main part is connected with one end of the second branch far away from the second main part;
the first branch and the second branch both cross over the active layer, the part of the first branch, which is overlapped with the active layer, is a first grid electrode, the part of the second branch, which is overlapped with the active layer, is a second grid electrode, and the repair part is positioned between the first grid electrode and the second grid electrode.
5. The pixel structure of claim 4, wherein the protrusion further comprises a third branch, and an end of the first branch away from the first main portion is connected with an end of the second branch away from the second main portion through the third branch.
6. The pixel structure according to any one of claims 2 to 5, wherein the active layer is disposed parallel to the trunk portion, and the active layer is linear.
7. The pixel structure according to claim 6, wherein the active layer further comprises a first functional portion and a second functional portion, the first functional portion and the second functional portion being connected by the repair portion;
the width of the repair portion is smaller than the width of the first functional portion, and/or the width of the repair portion is smaller than the width of the second functional portion.
8. The pixel structure of claim 1, further comprising a black matrix covering at least the first scan line, the second scan line, and the active layer;
the black matrix is provided with a first side edge, the first side edge faces the active layer and is internally concave to form a notch, and the shape of the notch is matched with that of the protruding part.
9. A display panel comprising the pixel structure of any one of claims 1 to 8.
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JP2009151093A (en) * | 2007-12-20 | 2009-07-09 | Ips Alpha Technology Ltd | Display device |
CN109360858A (en) * | 2018-09-28 | 2019-02-19 | 合肥鑫晟光电科技有限公司 | Thin film transistor (TFT), display base plate and restorative procedure, display device |
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CN1637552A (en) * | 2003-12-30 | 2005-07-13 | Lg.菲利浦Lcd株式会社 | Thin film transistor substrate of a horizontal electric field type and method of darkening defective pixel in the same |
JP2009151093A (en) * | 2007-12-20 | 2009-07-09 | Ips Alpha Technology Ltd | Display device |
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