CN113008220B - Piezoelectric type magnetic tuning disc gyroscope and preparation method and application thereof - Google Patents
Piezoelectric type magnetic tuning disc gyroscope and preparation method and application thereof Download PDFInfo
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- CN113008220B CN113008220B CN202110223123.1A CN202110223123A CN113008220B CN 113008220 B CN113008220 B CN 113008220B CN 202110223123 A CN202110223123 A CN 202110223123A CN 113008220 B CN113008220 B CN 113008220B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C25/00—Manufacturing, calibrating, cleaning, or repairing instruments or devices referred to in the other groups of this subclass
Abstract
The invention discloses a piezoelectric type magnetic tuning disc gyroscope and a preparation method and application thereof. The disk gyroscope comprises a supporting structure with a cavity, a resonant disk suspended on the cavity, and a plurality of elastic connecting pieces connecting the resonant disk and the supporting structure. The resonant disk is provided with at least one pair of driving electrodes and at least one pair of sensitive electrodes, the driving electrodes and the sensitive electrodes respectively comprise a first electrode, a piezoelectric layer and a second electrode which are sequentially stacked on the resonant disk, and the resonant disk is further provided with a first magnetic layer, or the driving electrodes and the sensitive electrodes respectively comprise a first electrode, a piezoelectric layer and a conductive first magnetic layer which are sequentially stacked on the resonant disk. The disk gyroscope is driven by the inverse piezoelectric effect, the piezoelectric effect is detected, and the frequency is tuned by the magnetostrictive effect and the magnetoelectric coupling effect, so that the use of a micro capacitor is avoided, the processing difficulty is reduced, and the possibility of further reducing the size of a device and the sensitivity of the device are improved.
Description
Technical Field
The invention belongs to the technical field of Micro Electro Mechanical Systems (MEMS), and relates to a piezoelectric type magnetic tuning disc gyroscope, and a preparation method and application thereof.
Background
The micro-electro-mechanical system is designed under the micron or even nanometer size, and is manufactured by the technologies of photoetching, corrosion, thin film growth, LIGA (LIGA is three words of lithograph, galanoformeng and Abformmung in Germany), namely the abbreviations of photoetching, electroforming and injection molding), silicon micromachining, non-silicon micromachining, precision machining and the like, and integrates a mechanical structure, a driving system, an optical system and a control system into an independent whole, thereby producing various high-tech electro-mechanical devices with excellent performance and low cost.
A gyroscope is a sensor for detecting the rotation angular velocity or angular acceleration of an object, and is widely applied to the fields of consumer electronics, military industry, aerospace and the like. In recent years, with the advent of 5G technology, the number and types of sensors in electronic devices have increased dramatically, and demands for miniaturization and integration of devices have increased.
At present, a MEMS gyroscope generally adopts capacitance driving, in order to ensure good signal response, a capacitance gap of several microns or even submicron level needs to be designed on the structure, which puts higher requirements on the aspects of process design and process precision, and meanwhile, the size of a device is difficult to be reduced.
The industry also partially tries to adopt a piezoelectric driving mode, but the mode degeneracy tuning scheme is not mature, so that the mechanical sensitivity and the detection sensitivity of the MEMS gyroscope are not high.
Disclosure of Invention
The invention mainly aims to provide a piezoelectric type magnetic tuning disk gyroscope, a preparation method and application thereof, which can avoid the use of a micro capacitor, and simultaneously, the frequency of a driving mode and the frequency of a sensitive mode tend to be consistent by using the technical scheme of tuning the resonance frequency by using the magnetostrictive effect and the magnetoelectric coupling effect, so that the sensitivity of the gyroscope is improved, and the defects of the prior art are overcome.
In order to achieve the purpose of the invention, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides a piezoelectric type magnetic tuning disc gyroscope which comprises a supporting structure with a cavity, a resonant disc and a plurality of elastic connecting pieces, wherein the resonant disc is arranged on the cavity in a suspending mode, the elastic connecting pieces are distributed around the resonant disc, and the resonant disc is connected with the supporting structure through the elastic connecting pieces; at least one pair of driving electrodes and at least one pair of sensitive electrodes are symmetrically distributed on the resonant disc, wherein one group of driving electrodes comprises two driving electrodes which are oppositely arranged, one group of sensitive electrodes comprises two sensitive electrodes which are oppositely arranged, and an included angle which is larger than 0 and smaller than 180 degrees is formed between one driving electrode and one sensitive electrode; each driving electrode and each sensitive electrode comprise a first electrode, a piezoelectric layer and a second electrode which are sequentially stacked on the resonant disk, first magnetic layers are further distributed on the resonant disk, and the at least one pair of driving electrodes and the at least one pair of sensitive electrodes are arranged around the first magnetic layers, or each driving electrode and each sensitive electrode comprise a first electrode, a piezoelectric layer and a conductive first magnetic layer which are sequentially stacked on the resonant disk.
Further, the first magnetic layer is a magnetic tuning layer with magnetostrictive effect; or, the conductive first magnetic layer and the piezoelectric layer cooperate to form a magnetoelectric coupling heterojunction.
Furthermore, a second magnetic layer is further distributed on the resonant disc, the at least one pair of driving electrodes and the at least one pair of sensing electrodes are arranged around the second magnetic layer, the first magnetic layer and the piezoelectric layer are matched to form a magnetoelectric coupling heterojunction, and the second magnetic layer is a magnetic tuning layer with a magnetostrictive effect.
Further, the support structure comprises a first substrate, the cavity is formed in the first substrate, and the first substrate, the resonator plate and the elastic connection member are integrally provided.
Further, the supporting structure further comprises a second substrate cooperating with the first substrate, the cavity is formed between the first substrate and the second substrate, the resonant disk and the elastic connecting member are integrally formed on the first substrate, and the driving electrode and the sensing electrode are distributed on a side surface of the first substrate facing the cavity.
Further, the first substrate includes an SOI substrate, and the second substrate includes a glass substrate.
Further, the first electrode and the second electrode comprise metal electrodes.
Further, the material of the piezoelectric layer includes AlN, znO, PZT, or AlScN, but is not limited thereto.
Further, the material of the first magnetic layer includes FeGa, feGaB, coFeB, coFe, ni, niFe or Terfenol-D, but is not limited thereto.
Further, the disk gyroscope is integrally in a central symmetrical structure.
Further, the group of driving electrodes and the group of matched sensitive electrodes form an included angle of 90 degrees.
Furthermore, the elastic connecting pieces are a plurality of micro springs which are uniformly distributed along the periphery of the resonant disk.
Further, an embodiment of the present invention provides a method for manufacturing the piezoelectric magnetically-tuned disk gyroscope, including:
sequentially forming a first electrode, a piezoelectric layer and a second electrode on the first surface of a first substrate, processing to form at least one pair of driving electrodes and at least one pair of sensitive electrodes, forming a first magnetic layer on the first surface of the substrate,
or, sequentially forming a first electrode, a piezoelectric layer and a conductive first magnetic layer on the first surface of the first substrate, and processing to form at least one pair of driving electrodes and at least one pair of sensitive electrodes;
processing and forming a pattern corresponding to the resonant disk and the elastic connecting piece on the first substrate;
and processing a second surface of the first substrate to form a cavity structure, and releasing the resonant disk and the elastic connecting piece, wherein the first surface is opposite to the second surface.
Further, an embodiment of the present invention further provides another method for manufacturing the piezoelectric magnetically tuned disk gyroscope, where the method includes:
sequentially forming a first electrode, a piezoelectric layer and a conductive first magnetic layer on a first surface of a first substrate, and processing to form at least one pair of driving electrodes and at least one pair of sensitive electrodes;
forming a second magnetic layer on the first surface of the first substrate;
processing and forming a pattern corresponding to the resonant disk and the elastic connecting piece on the first substrate;
and processing a second surface of the first substrate to form a cavity structure, and releasing the resonant disk and the elastic connecting piece, wherein the first surface is opposite to the second surface.
Further, another method for manufacturing a piezoelectric magnetic tuning disk gyroscope is provided in the embodiments of the present invention, and includes:
sequentially forming a first electrode, a piezoelectric layer and a second electrode on the first surface of a first substrate, processing to form at least one pair of driving electrodes and at least one pair of sensitive electrodes, forming a first magnetic layer on the first surface of the first substrate,
or, sequentially forming a first electrode, a piezoelectric layer and a conductive first magnetic layer on the first surface of the first substrate, and processing to form at least one pair of driving electrodes and at least one pair of sensitive electrodes;
processing and forming a pattern corresponding to the resonant disk, the elastic connecting piece and the electrode outlet on the first substrate;
processing a cavity structure on a second substrate;
bonding the first substrate to the first substrate such that the first surface of the first substrate is disposed opposite the cavity structure, and releasing the resonator plate and the elastic connection member.
Further, the present invention also provides a method for using the piezoelectric type magnetic tuning disk gyroscope, which comprises:
applying voltage to a pair of driving electrodes to enable the resonant disk to vibrate, and detecting signals of the gyroscope through a pair of sensitive electrodes forming an included angle of 90 degrees with the pair of driving electrodes;
and applying a variable magnetic field to the position of the first magnetic layer at least, and adjusting the magnitude and the direction of the variable magnetic field to enable the magnetostrictive effect and the magnetoelectric coupling effect to act synergistically to adjust the resonance frequency of the resonance disk together.
Compared with the prior art, the invention has at least the following beneficial effects:
(1) By adopting the technical scheme of piezoelectric driving and magnetic tuning, micro-capacitors are not needed, frequency splitting caused by uneven tiny capacitance gaps caused by machining precision is avoided, and meanwhile, the process of the MEMS resonant gyroscope is simplified.
(2) The prepared gyroscope device has small size and simple structure.
(3) The used materials and process design are compatible with the traditional micro-nano processing technology, and the mass preparation is easy.
(4) By using the technical scheme of tuning the frequency by using the magnetostrictive effect and the magnetoelectric coupling effect, the frequencies of the driving mode and the sensitive mode tend to be consistent, and the sensitivity of the gyroscope is improved.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings of the present invention will be briefly described below, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a top view of a piezoelectric magnetically-tuned disk gyroscope according to embodiment 1 of the present invention;
FIG. 2 is a cross-sectional view of a piezoelectric magnetically tunable disk gyroscope according to embodiment 1 of the present invention;
fig. 3 is a cross-sectional view of a piezoelectric type magnetically-tuned disk gyroscope according to embodiment 2 of the present invention;
FIG. 4 is a sectional view of a piezoelectric type magnetically tunable disk gyroscope according to embodiment 3 of the present invention;
FIG. 5 is a top view of the resonant disk portion of the piezoelectric magnetic tuning disk gyroscope of embodiment 4 of the present invention;
FIG. 6 is a sectional view of a resonance plate portion of a piezoelectric type magnetic tuning plate gyroscope according to embodiment 4 of the present invention;
FIG. 7 is a plan view of a glass substrate portion of a piezoelectric magnetically-tuned disk gyroscope according to example 4 of the present invention;
FIG. 8 is a sectional view of a glass substrate portion of a piezoelectric magnetically tunable disk gyroscope according to embodiment 4 of the present invention;
fig. 9 is a cross-sectional view of a piezoelectric type magnetically-tuned disk gyroscope according to embodiment 4 of the present invention;
FIG. 10a is a top view of a Piezo-magnetically tuned disk gyroscope of example 1 of the present invention with different spring configurations;
FIG. 10b is a top view of a Piezo-magnetic tuning disk gyroscope according to example 1 of the present invention with different numbers of electrodes;
FIG. 10c is a top view of a Piezo-magnetic tuning disk gyroscope according to example 1 of the present invention with an alternative arrangement of electrodes;
FIG. 10d is a top view of a Piezo-magnetic tuning disk gyroscope according to example 1 of the present invention with another electrode arrangement.
Description of reference numerals: 1, SOI substrate, 11, buried oxide layer, 2, cavity, 3, micro spring, 4, resonant disk, 5, working electrode, 51, first electrode, 52, piezoelectric layer, 53, second electrode, 54, first magnetic layer, 55, second magnetic layer, 6, lead electrode, 7, glass substrate, 8, bonding and lead electrode, 9, bonding electrode, and 10, electrode outlet.
Detailed Description
In view of the defects of the prior art, the inventor of the present invention has made long-term research and practice to provide the technical scheme of the present invention, and the wafer is processed to realize the in-plane bending resonance mode of the piezoelectric transverse drive, and the resonance frequency is tuned through the magnetoelectric coupling effect and the magnetostrictive effect, so that the present invention has the potential of micron-scale devices.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention. In addition, unless otherwise specified, various raw materials, reagents, and equipment used in the following examples are commercially available, and magnetron sputtering, photolithography, dry etching, wet etching, and the like used therein may be performed in a manner known in the art.
Example 1
The present embodiment is a scheme for tuning a resonant frequency by changing the structural stiffness of a device through a magnetostrictive effect in a piezoelectric magnetic tuning disk gyroscope according to the present invention.
Referring to fig. 1, which is a top view of the device in the present embodiment, wherein the resonant disk 4 is anchored to the SOI substrate 1 through eight micro-springs 3, corresponding to the number of micro-springs 3, eight working electrodes 5 are provided on the resonant disk 4 and eight lead electrodes 6 are provided on the substrate 1, which can be used for driving and signal detection and output of the resonant disk 4.
Referring to fig. 2, a cross-sectional view of the device in this embodiment includes: the SOI device comprises an SOI substrate 1, a first electrode 51 positioned on the substrate 1, a piezoelectric layer 52 positioned on the first electrode 51, a second electrode 53 positioned on the piezoelectric layer 52, and the first electrode 51, the piezoelectric layer 52 and the second electrode 53 jointly form a working electrode 5 and a lead electrode 6 of the device. Wherein the working electrode 5 comprises a driving electrode and a sensitive electrode. And the device further comprises a magnetic tuning layer consisting of a first magnetic layer 54 on the substrate 1, the resonator plate 4 being directly fabricated on the substrate 1 by etching and sacrificial layer release and the back cavity 2 being formed by deep silicon etching and chemical etching.
In a more typical embodiment, a single crystal SOI wafer of (100) crystal orientation is used as the SOI substrate 1, metal Mo as the first electrode 51 and the second electrode 53, A1N as the piezoelectric layer 52, and fega as the first magnetic layer 54 to constitute the magnetic tuning layer.
The specific process of the device of the embodiment includes:
providing an SOI wafer as an SOI substrate 1, and growing a first electrode 51 on the substrate 1 by adopting a magnetron sputtering method;
then growing an AlN piezoelectric layer 52 on the first electrode 51 and a second electrode 53 on the piezoelectric layer 52 by using a magnetron sputtering method, and processing the AlN piezoelectric layer and the second electrode into a driving electrode and a sensitive electrode;
then coating photoresist, and exposing the area where the magnetic tuning layer is located by dry etching after photoetching, wherein the dry etching process can adopt an IBE (ion beam etching) process;
depositing a magnetic film in the area of the magnetic tuning layer by adopting a magnetron sputtering method to form a first magnetic layer 54, and forming the magnetic tuning layer by adopting photoetching and stripping processes, wherein the first magnetic layer 54 can adopt a novel magnetostrictive material FeGa with good magnetostrictive effect;
coating a layer of thick photoresist on the upper surface of the wafer, performing IBE etching on the first electrode 51, the piezoelectric layer 52 and the second electrode 53 in sequence after photoetching, and enabling the three to have the same pattern;
after the photoresist is washed off, the photoresist is continuously coated on the upper surface of the wafer, and deep silicon etching is carried out after photoetching to obtain the patterns of the micro spring 3 and the resonance disc 4;
coating a layer of photoresist for protection on the upper surface of a wafer, firstly thinning the back of the wafer to a proper thickness, then coating the photoresist on the back of the wafer, etching the back of the substrate 1 by adopting a deep silicon etching process after photoetching until an oxygen buried layer 11 of the SOI substrate 1 is etched to obtain a back cavity 2, and washing off the protective photoresist;
and finally, removing the buried oxide layer 11 in the back cavity 2 by wet etching, and releasing the resonant disk 4 and the micro spring 3 to finish the preparation of the device.
Example 2
The present embodiment is a scheme for tuning a resonant frequency of a piezoelectric magnetically tuned disk gyroscope according to a magnetoelectric coupling effect.
Referring to fig. 3, a cross-sectional view of the device in this embodiment includes: the device comprises an SOI substrate 1, a first electrode 51 positioned on the substrate 1, a piezoelectric layer 52 positioned on the first electrode 51, a first magnetic layer 54 with electric conduction capability positioned on the piezoelectric layer 52, and the first electrode 51, the piezoelectric layer 52 and the first magnetic layer 54 jointly form a working electrode 5 of the device. Wherein the piezoelectric layer 52 forms a magnetoelectric coupling heterojunction with the first magnetic layer 54, and the working electrode 5 includes a driving electrode and a sensing electrode. And the device further comprises a resonator plate 4 directly fabricated on the substrate 1 by etching and sacrificial layer release and a back cavity 2 formed by deep silicon etching and chemical etching.
The specific process of the device of the embodiment includes:
providing an SOI wafer as an SOI substrate 1, and growing a first electrode 51 on the substrate 1 by adopting a magnetron sputtering method;
then growing an AlN piezoelectric layer 52 by using magnetron sputtering;
then, a magnetic thin film is continuously grown on the AlN piezoelectric layer 52 to form a first magnetic layer 54, and a magnetoelectric coupling heterojunction is formed with the piezoelectric layer 52 to form a driving electrode and a sensitive electrode, wherein the first magnetic layer 54 is made of a novel magnetostrictive material, namely, feGa, with good conductivity, and can serve as the second electrode 53;
coating a layer of thick photoresist on the upper surface of the wafer, photoetching, sequentially carrying out IBE etching on the first magnetic layer 54, carrying out ICP etching on the piezoelectric layer 52 and carrying out IBE etching on the first electrode 51 to ensure that the three layers have the same pattern;
after the photoresist is washed away, the photoresist is continuously coated on the upper surface of the wafer, and deep silicon etching is carried out after the photoresist is etched, so that the patterns of the micro spring 3 and the resonance disc 4 are obtained;
coating a layer of photoresist for protection on the upper surface of a wafer, firstly thinning the back of the wafer to a proper thickness, then coating the photoresist on the back of the wafer, etching the back of the substrate 1 by adopting a deep silicon etching process after photoetching until an oxygen buried layer 11 of the SOI substrate 1 is etched to obtain a back cavity 2, and washing off the protective photoresist;
and finally, removing the buried oxide layer 11 in the back cavity 2 by wet etching, and releasing the resonant disk 4 and the micro spring 3 to finish the preparation of the device.
Example 3
The embodiment is a scheme that the piezoelectric type magnetic tuning disk gyroscope simultaneously adopts the magnetostrictive effect to change the rigidity of the device structure and the magnetoelectric coupling effect to tune the resonant frequency.
Referring to fig. 4, a cross-sectional view of the device in this embodiment includes: the SOI device comprises an SOI substrate 1, a first electrode 51 positioned on the substrate 1, a piezoelectric layer 52 positioned on the first electrode 51, a first magnetic layer 54 with electric conduction capability positioned on the piezoelectric layer 52, and the first electrode 51, the piezoelectric layer 52 and the first magnetic layer 54 together form a working electrode 5 of the device. Wherein the working electrode 5 comprises a driving electrode and a sensing electrode, and the piezoelectric layer 52 and the first magnetic layer 54 form a magnetoelectric coupling heterojunction. And the device further comprises a magnetic tuning layer consisting of a resonant disk 4 prepared directly on the substrate 1 by etching and sacrificial layer release, a back cavity 2 formed by deep silicon etching and chemical etching, and a second magnetic layer 55 located on the resonant disk 4.
The specific process of the device of the embodiment includes:
providing an SOI wafer as an SOI substrate 1, and growing a first electrode 51 on the substrate 1 by adopting a magnetron sputtering method;
then growing an MN piezoelectric layer 52 by using magnetron sputtering;
then coating photoresist, and exposing the region where the magnetic tuning layer is located by dry etching after photoetching, wherein the dry etching process can adopt an RIE (reactive ion etching) process;
depositing a magnetic film on the piezoelectric layer 52 and the magnetic tuning layer by magnetron sputtering, wherein the magnetic film can be made of a novel magnetostrictive material FeGa with good conductivity and magnetostrictive effect, and separating the magnetic film on the piezoelectric layer 52 and the magnetic tuning layer by photoetching and IBE (ion beam etching) etching processes to form a first magnetic layer 54 and a second magnetic layer 55;
coating a layer of thick photoresist on the upper surface of the wafer, photoetching, and then sequentially carrying out IBE etching on the first magnetic layer 54, the piezoelectric layer 52 and the first electrode 51 to form the same pattern;
after the photoresist is washed off, the photoresist is continuously coated on the upper surface of the wafer, and deep silicon etching is carried out after photoetching to obtain the patterns of the micro spring 3 and the resonance disc 4;
coating a layer of photoresist for protection on the upper surface of a wafer, firstly thinning the back of the wafer to a proper thickness, then coating the photoresist on the back of the wafer, etching the back of the substrate 1 by adopting a deep silicon etching process after photoetching until an oxygen buried layer 11 of the SOI substrate 1 is etched to obtain a back cavity 2, and washing off the protective photoresist;
and finally, removing the oxygen burying layer 11 in the back cavity 2 by wet etching, and releasing the vibrating disk 4 and the micro spring 3 to finish the preparation of the device.
When the three embodiments are used specifically, a pair of opposite working electrodes 5 is selected as driving electrodes, the resonator is driven to vibrate according to a preset frequency through an inverse piezoelectric effect, another pair of working electrodes 5 which have a 90-degree difference with the driving electrodes is selected as detecting electrodes according to different selected modes, and signals of the gyroscope are detected through the piezoelectric effect. Outside the device, at the magnetic tuning layer and/or at the position of eight working electrodes 5, a variable magnetic field is provided for the device by means of an additional MEMS magnetic induction coil, and by controlling the direction and the size of the magnetic field, the magnetic tuning layer is deformed to different degrees to change the rigidity of the resonant disk 4 and/or adjust the resonant frequency of the resonant disk through the magnetoelectric coupling effect of a magnetoelectric coupling heterojunction between the first magnetic layer 54 and the piezoelectric layer 52, so that the driving frequency and the detection frequency of the gyroscope tend to be consistent, and further the mechanical sensitivity and the detection sensitivity of the gyroscope are improved.
Example 4
This embodiment is another embodiment of embodiment 3 of the present invention, in which a cavity 2 of a device is prepared on a glass substrate 7, and the device is prepared by bonding an SOI substrate 1 and the glass substrate 7, so that etching of a back cavity by using a deep silicon etching process is avoided, and electrical reliability of the device can be improved.
The device of the embodiment is prepared by two parts, namely an SOI (silicon on insulator) process and a glass substrate process.
Referring to fig. 5, which is a top view of the SOI technology device, wherein the resonant disk 4 is anchored on the SOI substrate 1 through the micro-springs 3, and corresponding to the number of the micro-springs 3, eight working electrodes 5 are disposed on the resonant disk 4, and eight bonding electrodes 9 and corresponding eight electrode outlets 10 are disposed on the substrate 1, which can be used for driving and signal detection and output of the resonant disk 4.
Referring to fig. 6, a cross-sectional view of a device in SOI technology, comprising: the SOI device comprises an SOI substrate 1, a first electrode 51 positioned on the substrate 1, a piezoelectric layer 52 positioned on the first electrode 51, a first magnetic layer 54 with electric conduction capability positioned on the piezoelectric layer 52, and the first electrode 51, the piezoelectric layer 52 and the first magnetic layer 54 together form a working electrode 5 of the device. Wherein the working electrode 5 comprises a driving electrode and a sensing electrode, and the piezoelectric layer 52 and the first magnetic layer 54 form a magnetoelectric coupling heterojunction. And the device further comprises a resonant disk 4 and an electrode outlet 10 prepared directly on the substrate 1 by etching and sacrificial layer release, a back cavity 2 formed by deep silicon etching and chemical etching, a magnetic tuning layer consisting of a second magnetic layer 55 located on the resonant disk 4, and a top bonding electrode 9 provided for the bonding process.
Referring to fig. 7, which is a top view of a process device on a glass substrate, a cavity 2 is prepared in the middle of a glass substrate 7 by chemical etching, and a bonding and wire electrode 8 is grown at a position corresponding to a bonding electrode 9 on an SOI substrate 1, so that the next bonding process can be carried out.
Referring to fig. 8, a cross-sectional view of a device processed on a glass substrate, comprising: a glass substrate 7, and a bonding and wire electrode 8 and a cavity 2 located on the glass substrate 7.
Referring to fig. 9, a cross-sectional view of a device after bonding the SOI substrate 1 and the glass substrate 7 according to the present embodiment includes: the SOI device comprises an SOI substrate 1, a first electrode 51 positioned on the substrate 1, a piezoelectric layer 52 positioned on the first electrode 51, a first magnetic layer 54 with electric conduction capability positioned on the piezoelectric layer 52, and a working electrode 5 and a bonding electrode 9 which are formed by the first electrode 51, the piezoelectric layer 52 and the first magnetic layer 54. Wherein the electrode 5 comprises a driving electrode and a sensing electrode, and the piezoelectric layer 52 and the first magnetic layer 54 form a magnetoelectric coupling heterojunction. And the device further comprises a magnetic tuning layer consisting of the resonator plate 4 and the electrode outlet 10, which are prepared directly on the substrate 1 by etching and sacrificial layer release, the back cavity 2 formed between the SOI substrate 1 and the glass substrate 7 by a bonding process, and a second magnetic layer 55 located on the resonator plate 4.
The specific process of the device of the embodiment includes:
providing an SOI wafer as an SOI substrate 1, and growing a first electrode 51 on the SOI substrate 1 by adopting a magnetron sputtering method;
then growing an AlN piezoelectric layer 52 by using magnetron sputtering;
then coating photoresist, and exposing the area where the magnetic tuning layer is located through dry etching after photoetching, wherein the dry etching process can adopt an IBE (ion beam etching) process;
depositing a magnetic film on the piezoelectric layer 52 and the magnetic tuning layer by magnetron sputtering, wherein the magnetic film can be made of a novel magnetostrictive material FeGa with good conductivity and magnetostrictive effect, and then separating the magnetic film on the piezoelectric layer 52 and the magnetic tuning layer by photoetching and RIE etching processes to form a first magnetic layer 54 and a second magnetic layer 55;
then, growing the top bonding electrode 9 by photoetching and stripping tools, wherein the bonding electrode 9 can be made of metal Au;
coating a layer of thick photoresist on the upper surface of the wafer, photoetching, sequentially carrying out IBE etching on the first magnetic layer 54, carrying out ICP etching on the piezoelectric layer 52 and carrying out IBE etching on the first electrode 51 to ensure that the three layers have the same pattern;
after the photoresist is washed off, the photoresist is continuously coated on the upper surface of the wafer, and deep silicon etching is carried out after the photoresist is etched, so that the patterns of the micro spring 3, the resonant disc 4 and the electrode outlet 10 are obtained;
etching a cavity 2 with a proper size on the glass substrate 7 by adopting a chemical etching method;
growing a bonding and lead electrode 8 on the glass substrate 7 at a position corresponding to a bonding electrode 9 on the SOI substrate 1 by adopting photoetching and stripping processes, wherein the bonding and lead electrode 8 is made of the same metal Au material as the bonding electrode 9;
then bonding the glass substrate 7 and the SOI substrate 1 according to the one-to-one corresponding position relation of the bonding electrode 9 and the bonding and lead electrode 8 on the glass substrate;
after the bonding is completed, the buried oxide layer 11 of the SOI substrate 1 shown in fig. 6 is completely etched, and the device is completed.
It should be noted that the process of this embodiment can also be applied to the schemes of embodiment 1 and embodiment 2 of the present invention, and only the corresponding preparation steps need to be changed according to embodiment 4.
The structure of the gyroscope related in the embodiment of the invention can also adopt various design schemes, and the number of the electrodes, the distribution mode of the electrodes and the shape of the micro spring 3 are designed differently according to the requirements of the use environment and the precision.
Referring to fig. 10a and 10b, on the basis of the device structure in embodiment 1 of the present invention, the same structure of the micro-spring 3 and the electrode distribution manner can be adopted, and the design manner with different numbers of electrodes can be adopted.
Specifically, the scheme of 4-32 groups of unequal electrode numbers can be adopted according to actual requirements.
Referring to fig. 10a and 10c, on the basis of the device structure in embodiment 1 of the present invention, the same number of electrodes and electrode distribution may be adopted, and different design manners of the structure of the micro spring 3 may be adopted, so as to meet different structural stiffness requirements of the device.
Referring to fig. 10c and 10d, on the basis of the device structure in embodiment 1 of the present invention, the same structure of the micro spring 3 and the number of electrodes are used, and different electrode distribution patterns are used, so that the device changes in mode shape.
It should be noted that the above-described various design schemes are applied to the devices in the embodiments 2, 3, and 4 of the present invention at the same time.
The above description is only an example of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can understand that the modifications or substitutions within the technical scope of the present invention are included in the scope of the present invention.
Claims (14)
1. A piezoelectric type magnetic tuning disk gyroscope is characterized by comprising a supporting structure with a cavity, a resonant disk suspended on the cavity and a plurality of elastic connecting pieces distributed around the resonant disk, wherein the resonant disk is connected with the supporting structure through the elastic connecting pieces; at least one pair of driving electrodes and at least one pair of sensitive electrodes are symmetrically distributed on the resonant disc, wherein one group of driving electrodes comprises two driving electrodes which are oppositely arranged, one group of sensitive electrodes comprises two sensitive electrodes which are oppositely arranged, and an included angle which is larger than 0 and smaller than 180 degrees is formed between one driving electrode and one sensitive electrode;
each driving electrode and each sensitive electrode comprise a first electrode, a piezoelectric layer and a second electrode which are sequentially stacked on the resonant disc, first magnetic layers are further distributed on the resonant disc, the at least one pair of driving electrodes and the at least one pair of sensitive electrodes are arranged around the first magnetic layers, and the first magnetic layers are magnetic tuning layers with magnetostrictive effects;
or each driving electrode and each sensitive electrode comprise a first electrode, a piezoelectric layer and a conductive first magnetic layer which are sequentially stacked on the resonant disc, and the conductive first magnetic layer and the piezoelectric layer are matched to form a magnetoelectric coupling heterojunction.
2. The disk gyroscope of claim 1, wherein when each of the drive electrodes and each of the sense electrodes includes the electrically conductive first magnetic layer, a second magnetic layer is further disposed on the resonant disk, the second magnetic layer being a magnetic tuning layer having a magnetostrictive effect, and at least one pair of drive electrodes and at least one pair of sense electrodes are disposed around the second magnetic layer.
3. The disc gyroscope of claim 1, wherein the support structure comprises a first substrate, the cavity is formed within the first substrate, and the first substrate, the resonant disc, and the resilient connector are integrally provided; alternatively, the support structure further comprises a second substrate cooperating with the first substrate, the cavity is formed between the first substrate and the second substrate, the resonator disks and the elastic connecting members are integrally formed on the first substrate, and the driving electrodes and the sensing electrodes are distributed on a side surface of the first substrate facing the cavity.
4. The disk gyroscope of claim 3, wherein the first substrate comprises an SOI substrate and the second substrate comprises a glass substrate.
5. The disk gyroscope of claim 1, wherein the first and second electrodes comprise metal electrodes.
6. The disk gyroscope of claim 1, wherein the material of the piezoelectric layer comprises AlN, znO, PZT, or AlScN.
7. The disk gyroscope of claim 1, wherein the material of the first magnetic layer comprises FeGa, feGaB, coFeB, coFe, ni, niFe, or Terfenol-D.
8. Disc gyroscope according to claim 1, characterized in that the disc gyroscope exhibits overall a centrosymmetric structure.
9. The disc gyroscope of claim 1, wherein the set of drive electrodes and the set of cooperating sense electrodes are angled at 90 °.
10. The disk gyroscope of claim 1, wherein the plurality of elastic connections are a plurality of micro-springs evenly distributed along the periphery of the resonant disk.
11. The method of manufacturing a piezoelectric magnetically tuned disk gyroscope of claim 1, comprising:
sequentially forming a first electrode, a piezoelectric layer and a second electrode on the first surface of a first substrate, processing to form at least one pair of driving electrodes and at least one pair of sensitive electrodes, forming a first magnetic layer on the first surface of the substrate,
or, sequentially forming a first electrode, a piezoelectric layer and a conductive first magnetic layer on the first surface of the first substrate, and processing to form at least one pair of driving electrodes and at least one pair of sensitive electrodes;
processing and forming a pattern corresponding to the resonant disk and the elastic connecting piece on the first substrate;
and processing a second surface of the first substrate to form a cavity structure, and releasing the resonant disk and the elastic connecting piece, wherein the first surface is opposite to the second surface.
12. The method of manufacturing a piezoelectric magnetically tuned disk gyroscope of claim 2, comprising:
sequentially forming a first electrode, a piezoelectric layer and a conductive first magnetic layer on a first surface of a first substrate, and processing to form at least one pair of driving electrodes and at least one pair of sensitive electrodes;
forming a second magnetic layer on the first surface of the first substrate;
processing and forming a pattern corresponding to the resonant disk and the elastic connecting piece on the first substrate;
and processing a second surface of the first substrate to form a cavity structure, and releasing the resonant disk and the elastic connecting piece, wherein the first surface is opposite to the second surface.
13. The method of manufacturing a piezoelectric magnetically tuned disk gyroscope of claim 1, comprising:
sequentially forming a first electrode, a piezoelectric layer and a second electrode on the first surface of a first substrate, processing to form at least one pair of driving electrodes and at least one pair of sensitive electrodes, forming a first magnetic layer on the first surface of the substrate,
or, sequentially forming a first electrode, a piezoelectric layer and a conductive first magnetic layer on the first surface of the first substrate, and processing to form at least one pair of driving electrodes and at least one pair of sensitive electrodes;
processing and forming a pattern corresponding to the resonant disk, the elastic connecting piece and the electrode outlet on the first substrate;
processing a cavity structure on a second substrate;
and bonding the first substrate and the second substrate, so that the first surface of the first substrate is opposite to the cavity structure, and releasing the resonant disk and the elastic connecting piece.
14. The method of using a piezoelectric magnetically tuned disk gyroscope of claim 2, comprising:
applying voltage to a pair of driving electrodes to make the resonant disk vibrate, and simultaneously detecting signals of the gyroscope through a pair of sensitive electrodes forming an included angle of 90 degrees with the pair of driving electrodes;
and applying a variable magnetic field to the position of the first magnetic layer at least, and adjusting the magnitude and the direction of the variable magnetic field to enable the magnetostrictive effect and the magnetoelectric coupling effect to act synergistically to adjust the resonance frequency of the resonance disk together.
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