CN113005425A - Method for improving red light luminous efficiency of amorphous silicon carbide film - Google Patents
Method for improving red light luminous efficiency of amorphous silicon carbide film Download PDFInfo
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- CN113005425A CN113005425A CN202110201017.3A CN202110201017A CN113005425A CN 113005425 A CN113005425 A CN 113005425A CN 202110201017 A CN202110201017 A CN 202110201017A CN 113005425 A CN113005425 A CN 113005425A
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- carbide film
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 29
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000003990 capacitor Substances 0.000 claims abstract description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 13
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910000077 silane Inorganic materials 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 45
- 239000010409 thin film Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 239000005304 optical glass Substances 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 238000000605 extraction Methods 0.000 abstract description 5
- 238000002360 preparation method Methods 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 238000004377 microelectronic Methods 0.000 abstract description 3
- 238000000295 emission spectrum Methods 0.000 description 8
- 238000005424 photoluminescence Methods 0.000 description 8
- 229910052724 xenon Inorganic materials 0.000 description 8
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 8
- 230000001276 controlling effect Effects 0.000 description 5
- 229910004012 SiCx Inorganic materials 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/65—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System including AIVBIV alloys, e.g. SiGe, SiC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for improving the red light luminous efficiency of an amorphous silicon carbide film, belonging to the technical field of nano photoelectronic device materials. The method comprises the following steps: in a parallel-plate capacitive radio frequency plasma enhanced chemical vapor deposition system, a substrate is fixed on the upper surface of a lower plate of a capacitor plate and is heated at the same time; introducing mixed gas of silane and methane into a reaction cavity; setting the flow ratio of silane to methane in the mixed gas according to the amorphous silicon carbide film preparation process, introducing ammonia gas with micro flow on the basis, and simultaneously modulating an extraction opening of the reaction chamber to keep the air pressure of the reaction chamber unchanged at 20 Pa; and applying a radio frequency signal to the upper plate of the capacitor plate to control the growth time. The method can improve the red light luminous efficiency of the amorphous silicon carbide film by more than 4 times, and the nitrogen-doped silicon-rich amorphous silicon carbide film with strong red light emission prepared by the method can be compatible with the current microelectronic process and is easy to be practical.
Description
Technical Field
The invention relates to the technical field of luminescent materials, in particular to a method for improving the red light luminous efficiency of an amorphous silicon carbide film by utilizing N doping.
Background
Optoelectronic integration based on semiconductor silicon-based materials is the core of a new generation of semiconductor devices in the 21 st century, and a silicon-based light source is the key for realizing monolithic optoelectronic integration of Si. The high-efficiency silicon-based light source is a significant research subject in the field of material science and microelectronics at present, and has important basic and application research significance.
Amorphous silicon carbide (a-SiC)x) The film is a wide-band-gap semiconductor material, has excellent physical and chemical properties such as high doping efficiency, transparency in a visible light region and the like, and has wide application prospects in the fields of silicon-based photoelectric integration, photovoltaic cells, detectors and the like. a-SiCxThe properties of the film are closely related to the content of C and Si atoms in the film and the bonding manner between the atoms. The Si content of the film is increased, so that the band gap of the film is reduced; on the contrary, increasing the C content of the film effectively increases the band gap of the film. By regulating a-SiCxThe Si and C contents of the film can also obtain light emission from red light to green light. However, the light emission intensity of the thin film is weak, wherein the red light emission efficiency is lower, which is mainly caused by the defect state of the thin film. The study shows that in a-SiCxThe defect state density can be reduced to a certain extent by doping H in the film, but the luminescence of the film is only slightly enhanced. In a-SiCxThe film is doped with O to obtain strong white light emission, and a net gain coefficient of 53cm is obtained at a wavelength of 630nm under ultraviolet light pumping-1However, as O is doped, the band gap of the film becomes larger, and enhanced red emission cannot be obtained. Similarly, the film is doped with N, so that stronger light emission can be obtained, but with the addition of N, the emission waveband of the film is mainly concentrated in a blue-green light waveband. Up to now, no N-doped p-reinforced a-SiC has been foundxStudy of thin film red emission.
Disclosure of Invention
In view of the above-mentioned technical problems, the present invention aims to provide a method for improving the red light emitting efficiency of an amorphous silicon carbide thin film.
In order to achieve the purpose of the invention, the technical scheme adopted by the invention is as follows:
a method for improving the red light luminous efficiency of an amorphous silicon carbide film comprises the following steps:
a) in a parallel-plate capacitive radio frequency plasma enhanced chemical vapor deposition system, a substrate is fixed on the upper surface of a lower plate of a capacitor plate; the substrate is a monocrystalline silicon wafer, a quartz wafer or optical glass;
b) adjusting the distance between the upper and lower electrode plates of the capacitor electrode plate to 2.5cm, grounding the lower electrode plate of the capacitor electrode plate, and heating the capacitor electrode plate to enable the substrate temperature to reach 250-;
c) introducing mixed gas of silane and methane into a reaction cavity according to a certain flow ratio; preferably, the flow ratio of silane to methane is 3.5sccm:5 sccm;
d) introducing ammonia gas with a micro flow into the reaction cavity, wherein the flow range of the ammonia gas is 0.3-2.2 sccm; the air pressure in the reaction cavity is kept at 20 Pa;
e) and applying a radio frequency signal with the radio frequency power of 20-40W to the upper plate of the capacitor plate, and controlling the growth time for 30 minutes.
The method of the invention has the following advantages:
(1) the preparation method of the N-doped amorphous silicon carbide film does not need expensive equipment technology, has simple preparation process and low cost, is compatible with the current microelectronic process, and is easy to be put into practical use.
(2) The preparation process parameters of the N-doped amorphous silicon carbide film can be accurately adjusted, and the N-doped amorphous silicon carbide film has good controllability and repeatability, high reliability and can realize large-area production.
(3) By doping N into the amorphous silicon carbide film, the defect state density of the film can be reduced to a certain degree, the red light emission efficiency of the amorphous silicon carbide film is improved, and the red light emission of the film can be improved by more than 3 times.
Drawings
FIG. 1 is NH3Photoluminescence images of the N-doped amorphous silicon carbide film and the non-N-doped amorphous silicon carbide film prepared at the flow rate of 0.5sccm under the excitation of a xenon lamp at the wavelength of 350 nm.
FIG. 2 is NH3Photoluminescence images of the N-doped amorphous silicon carbide film and the non-N-doped amorphous silicon carbide film prepared at the flow rate of 1.0sccm under the excitation of a xenon lamp at the wavelength of 350 nm.
FIG. 3 is NH3Photoluminescence images of the N-doped amorphous silicon carbide film and the non-N-doped amorphous silicon carbide film prepared at the flow rate of 1.5sccm under the excitation of a xenon lamp at the wavelength of 350 nm.
FIG. 4 is NH3Photoluminescence images of the N-doped amorphous silicon carbide film and the non-N-doped amorphous silicon carbide film prepared at the flow rate of 2.0sccm under the excitation of a xenon lamp at the wavelength of 350 nm.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following will describe the method of the present invention in further detail with reference to the accompanying drawings.
Cleaning and pretreating a substrate before preparation: the substrate is first rinsed with deionized water and then with HCl, H2O2、H2The proportion of the O composition is 1: 2: boiling 5 acidic cleaning solution for 5 min, washing with deionized water, and washing with NH4OH、H2O2、H2The proportion of the O composition is 1: 2: the alkaline cleaning solution of 6 is boiled for 5 minutes and is washed with deionized water. And drying the substrate after the washing is finished.
Example 1
a) In the flat capacitive radio frequency plasma enhanced chemical vapor deposition equipment, the distance between the upper electrode plate and the lower electrode plate of the capacitor plate is adjusted to 2.5cm, and the lower electrode plate of the capacitor plate is grounded.
b) Adding SiH4And CH4Gas is introduced into the reaction chamber, SiH4And CH4The gas flow ratio was 3.5sccm:5 sccm.
c) Introducing ammonia gas (the purity is 99.9999%) into the reaction cavity, adjusting the flow of the ammonia gas to be 0.5sccm, and simultaneously adjusting an extraction opening of the reaction chamber to keep the pressure of the reaction chamber unchanged at 20 Pa.
d) And (3) applying a radio frequency signal with the radio frequency power of 30W and the radio frequency of 40.68MHz to the upper plate, and controlling the growth time to be 30 minutes and the growth temperature to be 250 ℃.
e) Irradiating the film prepared in the step d) by using 350nm ultraviolet light of a xenon lamp, wherein the relationship between the photoluminescence red light emission spectrum and the red light emission spectrum of the film without N doping is shown in figure 1.
The result shows that the red light emission efficiency of the N-doped amorphous silicon carbide film prepared by the invention is improved by more than 0.5 times.
Example 2
a) In the flat capacitive radio frequency plasma enhanced chemical vapor deposition equipment, the distance between the upper electrode plate and the lower electrode plate of the capacitor plate is adjusted to 2.5cm, and the lower electrode plate of the capacitor plate is grounded.
b) Adding SiH4And CH4Gas is introduced into the reaction chamber, SiH4And CH4The gas flow ratio was 3.5sccm:5 sccm.
c) Introducing ammonia gas (the purity is 99.9999%) into the reaction cavity, adjusting the flow of the ammonia gas to be 1.0sccm, and simultaneously adjusting an extraction opening of the reaction chamber to keep the pressure of the reaction chamber unchanged at 20 Pa.
d) And (3) applying a radio frequency signal with the radio frequency power of 30W and the radio frequency of 40.68MHz to the upper plate, and controlling the growth time to be 30 minutes and the growth temperature to be 250 ℃.
e) Irradiating the film prepared in the step d) by using 350nm ultraviolet light of a xenon lamp, wherein the relationship between the photoluminescence red light emission spectrum and the red light emission spectrum of the film without N doping is shown in figure 2.
The result shows that the red light emission efficiency of the N-doped amorphous silicon carbide film prepared by the invention is improved by more than 1 time.
Example 3
a) In the flat capacitive radio frequency plasma enhanced chemical vapor deposition equipment, the distance between the upper electrode plate and the lower electrode plate of the capacitor plate is adjusted to 2.5cm, and the lower electrode plate of the capacitor plate is grounded.
b)Adding SiH4And CH4Gas is introduced into the reaction chamber, SiH4And CH4The gas flow ratio was 3.5sccm:5 sccm.
c) Introducing ammonia gas (the purity is 99.9999%) into the reaction cavity, adjusting the flow of the ammonia gas to be 1.5sccm, and simultaneously adjusting an extraction opening of the reaction chamber to keep the pressure of the reaction chamber unchanged at 20 Pa.
d) And (3) applying a radio frequency signal with the radio frequency power of 30W and the radio frequency of 40.68MHz to the upper plate, and controlling the growth time to be 30 minutes and the growth temperature to be 250 ℃.
e) Irradiating the film prepared in the step d) by using 350nm ultraviolet light of a xenon lamp, wherein the relationship between the photoluminescence red light emission spectrum and the red light emission spectrum of the film without N doping is shown in figure 3.
The result shows that the red light emission efficiency of the N-doped amorphous silicon carbide film prepared by the invention is improved by more than 1.5 times.
Example 4
a) In the flat capacitive radio frequency plasma enhanced chemical vapor deposition equipment, the distance between the upper electrode plate and the lower electrode plate of the capacitor plate is adjusted to 2.5cm, and the lower electrode plate of the capacitor plate is grounded.
b) Adding SiH4And CH4Gas is introduced into the reaction chamber, SiH4And CH4The gas flow ratio was 3.5sccm:5 sccm.
c) Introducing ammonia gas (the purity is 99.9999%) into the reaction cavity, adjusting the flow of the ammonia gas to be 2.0sccm, and simultaneously adjusting an extraction opening of the reaction chamber to keep the pressure of the reaction chamber unchanged at 20 Pa.
d) And (3) applying a radio frequency signal with the radio frequency power of 30W and the radio frequency of 40.68MHz to the upper plate, and controlling the growth time to be 30 minutes and the growth temperature to be 250 ℃.
e) Irradiating the film prepared in the step d) by using 350nm ultraviolet light of a xenon lamp, wherein the relationship between the photoluminescence red light emission spectrum and the red light emission spectrum of the film without N doping is shown in figure 4.
The result shows that the red light emission efficiency of the N-doped amorphous silicon carbide film prepared by the invention is improved by more than 3 times.
Claims (4)
1. A method for improving the red light luminous efficiency of an amorphous silicon carbide film is characterized by comprising the following steps:
a) in a parallel-plate capacitive radio frequency plasma enhanced chemical vapor deposition system, a substrate is fixed on the upper surface of a lower plate of a capacitor plate;
b) adjusting the distance between the upper and lower electrode plates of the capacitor electrode plate to 2.5cm, grounding the lower electrode plate of the capacitor electrode plate, and heating the capacitor electrode plate to enable the substrate temperature to reach 250-;
c) introducing mixed gas of silane and methane into a reaction cavity according to a certain flow ratio;
d) introducing ammonia gas with a micro flow into the reaction cavity, and keeping the air pressure in the reaction cavity at 20 Pa;
e) and applying a radio frequency signal with the radio frequency power of 20-40W to the upper plate of the capacitor plate, and controlling the growth time for 30 minutes.
2. The method for improving the red light emitting efficiency of the amorphous silicon carbide thin film according to claim 1, wherein in the step a), the substrate is a monocrystalline silicon wafer, a quartz wafer or an optical glass.
3. The method as claimed in claim 1, wherein in the step c), the flow ratio of silane to methane is 3.5sccm:5 sccm.
4. The method as claimed in claim 1, wherein the flow rate of ammonia gas in step d) is 0.3-2.2 sccm.
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| CN202110201017.3A CN113005425A (en) | 2021-02-23 | 2021-02-23 | Method for improving red light luminous efficiency of amorphous silicon carbide film |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1684282A (en) * | 2004-04-12 | 2005-10-19 | 韩国电子通信研究院 | Silicon light emitting device and method of manufacturing the same |
| CN101942649A (en) * | 2010-10-21 | 2011-01-12 | 韩山师范学院 | Method for constructing high-density nano-silicon structure at low temperature |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1684282A (en) * | 2004-04-12 | 2005-10-19 | 韩国电子通信研究院 | Silicon light emitting device and method of manufacturing the same |
| CN101942649A (en) * | 2010-10-21 | 2011-01-12 | 韩山师范学院 | Method for constructing high-density nano-silicon structure at low temperature |
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Application publication date: 20210622 |