CN112994589B - Thermal photovoltaic power generation system based on metamaterial heat radiator and preparation method thereof - Google Patents
Thermal photovoltaic power generation system based on metamaterial heat radiator and preparation method thereof Download PDFInfo
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- 238000010248 power generation Methods 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910005542 GaSb Inorganic materials 0.000 claims abstract description 37
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 27
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000009792 diffusion process Methods 0.000 claims abstract description 21
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 20
- 239000011701 zinc Substances 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 16
- 239000010937 tungsten Substances 0.000 claims abstract description 16
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000010521 absorption reaction Methods 0.000 claims abstract description 12
- 239000002086 nanomaterial Substances 0.000 claims abstract description 12
- 238000007747 plating Methods 0.000 claims abstract description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 30
- 238000001228 spectrum Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 238000005516 engineering process Methods 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 238000005238 degreasing Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 5
- 230000017525 heat dissipation Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 238000002791 soaking Methods 0.000 claims description 5
- 238000003892 spreading Methods 0.000 claims description 5
- 230000007480 spreading Effects 0.000 claims description 5
- 238000001771 vacuum deposition Methods 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 238000000609 electron-beam lithography Methods 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 18
- 238000000295 emission spectrum Methods 0.000 abstract description 12
- 230000005855 radiation Effects 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000002061 nanopillar Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/30—Thermophotovoltaic systems
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/40—Thermal components
- H02S40/42—Cooling means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention provides a thermophotovoltaic power generation system based on a metamaterial heat radiator and a preparation method thereof, wherein the preparation method comprises the steps of adopting the metamaterial heat radiator as a high-temperature radiator, selecting silicon dioxide as a substrate of an emitter, processing tungsten with the thickness of 100 nanometers on the upper surface of the substrate as an absorption layer, processing silicon dioxide with the thickness of 400 nanometers on the absorption layer as an intermediate layer, and processing silicon nanometer cylindrical micro-nano structures which are periodically arranged on the upper surface of the intermediate layer; adopting a gallium antimonide photovoltaic cell as a receiver photovoltaic cell, selecting the surface of an n-type GaSb wafer doped with Te to carry out zinc diffusion to form a pn junction to form a p-type GaSb layer doped with zinc, plating a negative electrode on the back of the wafer, and plating a positive electrode on the front end of the wafer; based on the metamaterial heat radiator, a novel thermophotovoltaic power generation system is built to obtain the thermophotovoltaic power generation device based on the metamaterial heat radiator. The invention solves the problems of battery temperature rise and low thermoelectric conversion efficiency caused by mismatching of the emission spectrum of a heat radiator of a thermal photovoltaic power generation system and the forbidden band of a photovoltaic battery.
Description
Technical Field
The invention relates to the technical field of thermophotovoltaic power generation, in particular to a thermophotovoltaic power generation system based on a metamaterial heat radiator and a preparation method thereof.
Background
The thermophotovoltaic power generation system has important application value in various fields, particularly in the fields of detection satellites, waste heat utilization and the like, and the electricity generation system provided by the thermoelectric conversion technology is used by the Apollo No. 17 airship in the United states lunar planning to successfully transmit data to the earth from the surface of the moon. As early as the sixties of the nineteenth century, humans began a large-scale plan for conquering space. A major leap has been made in these short decades from the lunar project in 1969 to the Mars exploration in 2001, in which thermophotovoltaic power generation technology is indispensable. The conversion from heat energy to electric energy is realized by utilizing a thermophotovoltaic power generation technology, and continuous electric energy which is more than twenty years can be provided by adopting an isotope heat source, which is incomparable with any other energy technology. The thermal photovoltaic system based on the metamaterial heat radiator can realize higher-efficiency energy conversion because the thermal photovoltaic system can directly convert heat energy into thermal radiation photons matched with a photovoltaic cell forbidden band, the heat radiator is composed of a metamaterial micro-nano structure, is compatible with a CMOS (complementary metal oxide semiconductor) process, is a solid component, is high in energy density, safe and reliable in operation and has wide application.
In view of the above-mentioned related art, the inventor considers that there is a problem of mismatch of energy spectrums of a thermal radiator and a photovoltaic cell of a thermophotovoltaic power generation system, and therefore, a technical solution is needed to improve the above technical problem.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a thermophotovoltaic power generation method and system based on a metamaterial heat radiator.
The invention provides a thermophotovoltaic power generation system based on a metamaterial heat radiator, which comprises
A metamaterial heat radiator as an emitter of the system;
a photovoltaic cell as a receiver of a system;
the transmitter transmits the spectrum, the receiver receives the spectrum transmitted by the transmitter, and the photovoltaic cell realizes the output of electric energy through a photoelectric effect.
Preferably, a high-temperature heat source is conducted to the metamaterial heat radiator.
Preferably, the bottom of the photovoltaic cell is provided with a heat dissipation fin.
The invention also provides a preparation method of the thermophotovoltaic power generation system based on the metamaterial heat radiator, which comprises the following steps:
step 1: adopting a metamaterial heat radiator as a high-temperature radiator, and selecting silicon dioxide SiO2As a transmissionThe substrate of the device is firstly processed with 100 nm tungsten W as the absorbing layer on the upper surface of the substrate, and then processed with 400 nm silicon dioxide SiO on the absorbing layer2As an intermediate layer, finally processing silicon Si nano cylindrical micro-nano structures which are periodically arranged on the upper surface of the intermediate layer; the metamaterial is arranged into a one-dimensional multilayer film structure or a two-dimensional cavity structure;
step 2: adopting a gallium antimonide photovoltaic cell as a receiver photovoltaic cell, selecting the surface of an n-type GaSb wafer doped with Te to carry out zinc diffusion to form a pn junction, diffusing to form a p-type GaSb layer doped with zinc, removing the pn junction on the back of the wafer by a chemical corrosion technology, plating a negative electrode on the back of the wafer, and plating a positive electrode on the front end of the wafer;
and step 3: arranging a heat dissipation fin at the bottom of the photovoltaic cell;
and 4, step 4: and acquiring the thermophotovoltaic power generation device based on the metamaterial heat radiator.
Preferably, the step 1 comprises the steps of:
step 1.1: selecting flat silicon dioxide glass as a substrate of the metamaterial heat radiator, wherein the thickness of the substrate material is not less than 1 mm;
step 1.2: processing a nano tungsten layer on a substrate as an absorption layer of the emitter by magnetron sputtering, and selecting the processing thickness to be 100 nanometers;
step 1.3: processing silicon dioxide with the thickness of 400 nanometers on the surface of the tungsten layer by a plasma enhanced chemical vapor deposition method to serve as an intermediate layer; similarly, an amorphous silicon layer with the thickness of 50 nanometers is processed on the surface of the silicon dioxide by the method;
step 1.4: and etching the amorphous silicon layer by using an electron beam lithography technology and a reactive ion beam etching method, wherein each super-surface structure unit comprises two silicon nano-columns with different sizes.
Preferably, the step 2 comprises the steps of:
step 2.1: cleaning a GaSb wafer, degreasing by utilizing dimethylbenzene, rinsing by using acetone and methanol, soaking in a hydrochloric acid solution to remove surface oxides, cleaning by using methanol, and finally drying by using high-purity nitrogen;
step 2.2: performing zinc diffusion on the surface of the n-type GaSb wafer to form a pn junction and form a zinc-doped p-type GaSb layer;
step 2.3: after the GaSb wafer is diffused, pn junctions on the periphery and the back of the wafer are removed;
step 2.4: after diffusion, GaSb is doped with proper zinc, a photoetching mask plate with a corresponding electrode shape is firstly processed, and silver is plated on the positive electrode and the negative electrode of the wafer by using a vacuum evaporation method after glue spreading, photoetching and developing.
Preferably, the step 3 comprises the steps of:
step 3.1: the metamaterial heat radiator in the step 1 is used as an emitter of a thermophotovoltaic system to realize selective emission of a spectrum;
step 3.2: adopting the gallium antimonide photovoltaic cell in the step 2 as a receiver photovoltaic cell of a thermal photovoltaic system;
step 3.3: and the bottom of the photovoltaic cell adopts a high-performance radiating fin to radiate the photovoltaic cell.
Preferably, the step 4 comprises the steps of:
step 4.1: different high-temperature heat sources are adopted to conduct heat to the metamaterial heat radiator by utilizing heat-conducting or radiating media;
step 4.2: the metamaterial heat radiator selectively emits heat energy to the surface of the photovoltaic cell through spectrum, and the photovoltaic cell realizes the output of electric energy through a photoelectric effect.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention solves the problem of low thermoelectric conversion efficiency caused by low matching degree of the heat radiator and the photovoltaic cell forbidden band of the existing thermophotovoltaic power generation system. For the specific implementation cases: the emission spectrum is adjusted by adopting a metamaterial heat radiator, and the perfect energy spectrum matching degree is realized by utilizing the emission spectrum adjusting and controlling capability of the metamaterial micro-nano structure;
2. the invention solves the problem of temperature rise of the photovoltaic cell caused by low matching degree of a heat radiator and a photovoltaic cell forbidden band of the existing thermal photovoltaic power generation system. For the specific implementation cases: the metamaterial heat radiator is adopted to realize the regulation and control of the spectrum, so that low-energy photons are not absorbed by the photovoltaic cell, and the stable working temperature of the photovoltaic cell is maintained;
3. the invention solves the problem that the heat radiator of the existing thermal photovoltaic system is difficult to flexibly adjust the emission spectrum. For the specific implementation cases: aiming at photovoltaic cells with different forbidden bands, high-efficiency energy spectrum matching can be achieved through a heat radiator with a reasonably designed metamaterial micro-nano structure, and high thermoelectric conversion efficiency of a thermophotovoltaic power generation system is achieved.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a top view of an overall metamaterial heat radiator structure according to the present invention;
FIG. 2 is a schematic structural diagram of a metamaterial heat radiator unit according to the present invention;
FIG. 3 is a schematic view of a gallium antimonide photovoltaic cell structure employed in the present invention;
FIG. 4 is a schematic structural diagram of a thermophotovoltaic power generation system based on a metamaterial heat radiator according to the present invention
FIG. 5 is a graph showing the emissivity spectrum of a metamaterial heat radiator and the external quantum efficiency spectrum of a GaSb cell according to the present invention;
fig. 6 is a graph showing the thermoelectric conversion efficiency of the thermophotovoltaic power generation system according to the present invention.
Wherein: 1. the metamaterial thermally radiates the overall structural plan view of the structure; 2. the metamaterial thermally radiates its structural units; 201. a main silicon column; 202. an auxiliary silicon column; 203. a silicon dioxide intermediate layer; 204. a tungsten absorber layer; 301. a gallium antimonide wafer; 302. a positive electrode of a photovoltaic cell; 303. a negative electrode of a photovoltaic cell; 401. a heat source; 402. a metamaterial heat radiator; 403. a photovoltaic cell; 404. a heat dissipating fin; 405. and (4) heat sink at the cold end.
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that it would be obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit of the invention. All falling within the scope of the present invention.
The invention provides a thermophotovoltaic power generation method based on a metamaterial heat radiator, which comprises the following steps: step 1: adopting a metamaterial heat radiator as a high-temperature radiator, and selecting silicon dioxide SiO2As a substrate of the emitter, firstly, processing tungsten W with the thickness of 100 nanometers on the upper surface of the substrate to be used as an absorption layer, then processing silicon dioxide with the thickness of 400 nanometers on the absorption layer to be used as an intermediate layer, and finally processing silicon Si nanometer cylindrical micro-nano structures which are periodically arranged on the upper surface of the intermediate layer; the metamaterial can also be other structures such as a one-dimensional multilayer film structure, a two-dimensional cavity structure and the like; step 2: the gallium antimonide photovoltaic cell is used as a receiver photovoltaic cell, the cell has high external quantum efficiency, and the forbidden bandwidth is 0.72 eV. And (3) selecting the surface of the n-type GaSb wafer doped with Te to perform zinc diffusion to form a pn junction, and diffusing to form a p-type GaSb layer doped with zinc. Removing the pn junction on the back of the wafer by a chemical corrosion technology, plating a negative electrode on the back of the wafer, and plating a positive electrode on the front end of the wafer; and step 3: a novel thermophotovoltaic power generation system is built based on a metamaterial heat radiator, and the problem that the matching degree of an emission spectrum and a photovoltaic cell forbidden band is low is solved; and 4, step 4: and acquiring the thermophotovoltaic power generation device based on the metamaterial heat radiator.
The step 1 comprises the following steps: step 1.1: selecting flat silicon dioxide glass as a substrate of the metamaterial heat radiator, wherein the thickness of the substrate material is not less than 1 mm in order to ensure that the metamaterial heat radiator has stable mechanical performance; step 1.2: processing a nano tungsten layer on a substrate by magnetron sputtering to serve as an absorption layer of the emitter, and selecting the processing thickness to be 100 nanometers to ensure that the processing thickness is larger than the skin depth of a thermal radiation emission waveband; step 1.3: processing silicon dioxide with the thickness of 400 nanometers on the surface of the tungsten layer by a plasma enhanced chemical vapor deposition method to serve as an intermediate layer; similarly, an amorphous silicon layer with the thickness of 50 nanometers is processed on the surface of the silicon dioxide by the method; step 1.4: and etching the amorphous silicon layer by using an electron beam lithography technology and a reactive ion beam etching method to realize a silicon nano-pillar micro-nano structure with the cycle size of 830 nanometers, wherein each super-surface structure unit comprises two silicon nano-pillars with different sizes.
The step 2 comprises the following steps: step 2.1: cleaning a GaSb wafer, degreasing by utilizing dimethylbenzene, rinsing by using acetone and methanol, soaking in a hydrochloric acid solution to remove surface oxides, cleaning by using methanol, and finally drying by using high-purity nitrogen; step 2.2: performing zinc diffusion on the surface of the n-type GaSb wafer to form a pn junction so as to form a zinc-doped p-type GaSb layer by diffusion; step 2.3: after the GaSb wafer is diffused, pn junctions at the periphery and the back of the wafer need to be removed to prevent the generation of photogenerated voltage or short circuit opposite to that of the front junction. The back junction and the peripheral diffusion layer can be effectively removed by using hydrofluoric acid chemical corrosion; step 2.4: after diffusion, GaSb is doped with proper zinc, a photoetching mask plate with a corresponding electrode shape is firstly processed, and silver is plated on the positive electrode and the negative electrode of the wafer by using a vacuum evaporation method after glue spreading, photoetching and developing.
The step 3 comprises the following steps: step 3.1: the metamaterial heat radiator in the step 1 is used as an emitter of a thermophotovoltaic system to realize selective emission of a spectrum; step 3.2: adopting the gallium antimonide photovoltaic cell in the step 2 as a receiver photovoltaic cell of a thermal photovoltaic system; step 3.3: and the bottom of the photovoltaic cell adopts a high-performance radiating fin to radiate the photovoltaic cell.
The invention also provides a thermophotovoltaic power generation system based on the metamaterial heat radiator, which comprises: module M1: adopting a metamaterial heat radiator as a high-temperature radiator, and selecting silicon dioxide SiO2As a substrate of the emitter, first, tungsten W with a thickness of 100 nm is processed on the upper surface of the substrate as an absorption layer, and then 400 nm of silicon dioxide is processed on the absorption layerThe intermediate layer is formed, and finally, silicon Si nanometer cylindrical micro-nano structures which are periodically arranged are processed on the upper surface of the intermediate layer; the metamaterial can also be other structures such as a one-dimensional multilayer film structure, a two-dimensional cavity structure and the like; module M2: constructing a structural unit of the sub-wavelength thermal radiation waveguide device; the structural unit is in a shape of a nano columnar structure with an open structure; the geometrical parameters included therein are: the radius r, the height h, the opening width g, the opening direction and the period dimension a of the structural unit of the disc-shaped structure adopt a gallium antimonide photovoltaic cell as a receiver photovoltaic cell, the cell has high external quantum efficiency, and the forbidden band width is 0.72 eV. And (3) selecting the surface of the n-type GaSb wafer doped with Te to perform zinc diffusion to form a pn junction, and diffusing to form a p-type GaSb layer doped with zinc. Removing the pn junction on the back of the wafer by a chemical corrosion technology, plating a negative electrode on the back of the wafer, and plating a positive electrode on the front end of the wafer; module M3: a novel thermophotovoltaic power generation system is built based on a metamaterial heat radiator, and the problem that the matching degree of an emission spectrum and a photovoltaic cell forbidden band is low is solved; module M4: and acquiring the thermophotovoltaic power generation device based on the metamaterial heat radiator.
The module M1 includes: module M1.1: selecting flat silica glass as a substrate of the metamaterial heat radiator, wherein in order to ensure that the metamaterial heat radiator has stable mechanical properties, the thickness of the substrate material is not less than 1 mm, and the step M1.2: processing a nano tungsten layer on a substrate by magnetron sputtering to serve as an absorption layer of the emitter, and selecting the processing thickness to be 100 nanometers to ensure that the processing thickness is larger than the skin depth of a thermal radiation emission waveband; step M1.3: processing silicon dioxide with the thickness of 400 nanometers on the surface of the tungsten layer by a plasma enhanced chemical vapor deposition method to serve as an intermediate layer; similarly, an amorphous silicon layer with the thickness of 50 nanometers is processed on the surface of the silicon dioxide by the method; step M1.4: and etching the amorphous silicon layer by using an electron beam lithography technology and a reactive ion beam etching method to realize a silicon nano-pillar micro-nano structure with the cycle size of 830 nanometers, wherein each super-surface structure unit comprises two silicon nano-pillars with different sizes.
The module M2 includes: module M2.1: cleaning a GaSb wafer, degreasing by utilizing dimethylbenzene, rinsing by using acetone and methanol, soaking in a hydrochloric acid solution to remove surface oxides, cleaning by using methanol, and finally drying by using high-purity nitrogen; step M2.2: performing zinc diffusion on the surface of the n-type GaSb wafer to form a pn junction so as to form a zinc-doped p-type GaSb layer by diffusion; step M2.3: after the GaSb wafer is diffused, pn junctions at the periphery and the back of the wafer need to be removed to prevent the generation of photogenerated voltage or short circuit opposite to that of the front junction. The back junction and the peripheral diffusion layer can be effectively removed by using hydrofluoric acid chemical corrosion; step M2.4: after diffusion, GaSb is doped with proper zinc, a photoetching mask plate with a corresponding electrode shape is firstly processed, and silver is plated on the positive electrode and the negative electrode of the wafer by using a vacuum evaporation method after glue spreading, photoetching and developing.
The module M3 includes: module M3.1: the metamaterial heat radiator of the module M1 is used as an emitter of a thermophotovoltaic system to realize selective emission of a spectrum; module M3.2: the gallium antimonide photovoltaic cell of module M2 is used as a receiver photovoltaic cell of a thermal photovoltaic system; module M3.3: and the bottom of the photovoltaic cell adopts a high-performance radiating fin to radiate the photovoltaic cell.
The module M4 includes: module M4.1: different high-temperature heat sources are adopted to conduct heat to the metamaterial heat radiator by utilizing heat-conducting or radiating media; module M4.2: the metamaterial heat radiator selectively emits heat energy to the surface of the photovoltaic cell through spectrum, and the photovoltaic cell realizes the output of electric energy through a photoelectric effect, so that the thermal photovoltaic power generation system based on the metamaterial heat radiator is obtained.
Specifically, in one embodiment, fig. 1 is a top view of the whole metamaterial heat radiator structure of the present invention,
fig. 1 is a top view of the overall structure of the metamaterial heat radiator structure of the present invention, the top layer of the device is periodically arranged by a plurality of silicon nano-pillar unit structures in a square lattice, and the lower layer of the device is a flat silicon dioxide layer and a tungsten layer. The tungsten layer thickness is greater than the skin depth of the operating band, and in this particular embodiment is 100 nanometers.
Fig. 2 is a schematic structural diagram of a unit of a metamaterial heat radiator structure of the present invention, in which the ratio of the radius of the main silicon pillar to the radius of the auxiliary silicon pillar is 3.5, the center of the main cylinder coincides with the center of the lattice, and the center of the auxiliary cylinder is located at the lattice position of the square lattice. The period size is 830 nm in this particular embodiment.
Fig. 3 is a schematic structural diagram of a gallium antimonide photovoltaic cell adopted by the present invention, in which 301 is a gallium antimonide wafer, 302 is an anode of the photovoltaic cell, 303 is a cathode of the photovoltaic cell, the forbidden band energy of the photovoltaic cell is 0.72eV, the band gap wavelength is 1.708 microns, and the external quantum efficiency is high. The preparation step 2 comprises: step 2.1: cleaning a GaSb wafer, degreasing by utilizing dimethylbenzene, rinsing by using acetone and methanol, soaking in a hydrochloric acid solution to remove surface oxides, cleaning by using methanol, and finally drying by using high-purity nitrogen; step 2.2: performing zinc diffusion on the surface of the n-type GaSb wafer to form a pn junction so as to form a zinc-doped p-type GaSb layer by diffusion; step 2.3: after the GaSb wafer is diffused, pn junctions at the periphery and the back of the wafer need to be removed to prevent the generation of photogenerated voltage or short circuit opposite to that of the front junction. The back junction and the peripheral diffusion layer can be effectively removed by using hydrofluoric acid chemical corrosion; step 2.4: after diffusion, GaSb is doped with proper zinc, a photoetching mask plate with a corresponding electrode shape is firstly processed, and silver is plated on the positive electrode and the negative electrode of the wafer by using a vacuum evaporation method after glue spreading, photoetching and developing.
FIG. 4 is a schematic structural diagram of a thermophotovoltaic power generation system based on a metamaterial heat radiator according to the present invention. In the schematic diagram 401 is a heat source, in the system, the heat source may be an isotope heat source, a heat source of concentrated light, etc., so as to realize effective conversion and utilization of various heat energies. The material 402 is a metamaterial heat radiator, different structural sizes can be adjusted according to forbidden band widths of different photovoltaic cells, matching of the emission spectrum of the radiator and the forbidden bands of the photovoltaic cells is achieved, energy loss is reduced, and thermoelectric conversion efficiency of the thermophotovoltaic power generation system is improved. And 403, a photovoltaic cell which outputs current through a photoelectric effect. And 404 are heat dissipation fins which are mainly used for dissipating heat of the back of the photovoltaic cell and ensuring that the temperature of the photovoltaic cell can keep high-efficiency working temperature. 405 is a thermal photovoltaic power generation system heat sink, mainly used for receiving heat dissipation of fins. The system can effectively improve the thermoelectric conversion efficiency of the thermophotovoltaic power generation system by adopting the metamaterial heat radiator.
Fig. 5 is a graph showing the emissivity spectrum of the metamaterial heat radiator and the external quantum efficiency spectrum of the GaSb battery, from which it can be found that the gallium antimonide photovoltaic battery has higher external quantum efficiency, and the thermal emission spectrum of the metamaterial heat radiator can be effectively matched with the external quantum efficiency, so that the thermal photovoltaic power generation system has higher hotspot conversion efficiency.
Fig. 6 is a graph showing the thermoelectric conversion efficiency of the thermophotovoltaic power generation system according to the present invention. It can be found that with the increase of temperature, the thermoelectric conversion efficiency of the thermophotovoltaic power generation system is improved, and 40% conversion efficiency under the medium-high temperature environment can be realized.
The thermophotovoltaic power generation system based on the metamaterial heat radiator has the advantages of high energy spectrum matching degree and high thermoelectric conversion efficiency. The metamaterial heat radiator can realize high-efficiency emission spectrum matched with forbidden band widths of different photovoltaic cells by adjusting different structural sizes, and realize high-efficiency thermoelectric conversion.
The invention solves the problem of low thermoelectric conversion efficiency caused by low matching degree of the heat radiator and the photovoltaic cell forbidden band of the existing thermophotovoltaic power generation system. For the specific implementation cases: the emission spectrum is adjusted by adopting a metamaterial heat radiator, and the perfect energy spectrum matching degree is realized by utilizing the emission spectrum adjusting and controlling capability of the metamaterial micro-nano structure; the invention solves the problem of temperature rise of the photovoltaic cell caused by low matching degree of a heat radiator and a photovoltaic cell forbidden band of the existing thermal photovoltaic power generation system. For the specific implementation cases: the metamaterial heat radiator is adopted to realize the regulation and control of the spectrum, so that low-energy photons are not absorbed by the photovoltaic cell, and the stable working temperature of the photovoltaic cell is maintained; the invention solves the problem that the heat radiator of the existing thermal photovoltaic system is difficult to flexibly adjust the emission spectrum. For the specific implementation cases: aiming at photovoltaic cells with different forbidden bands, high-efficiency energy spectrum matching can be achieved through a heat radiator with a reasonably designed metamaterial micro-nano structure, and high thermoelectric conversion efficiency of a thermophotovoltaic power generation system is achieved.
Those skilled in the art will appreciate that, in addition to implementing the system and its various devices, modules, units provided by the present invention as pure computer readable program code, the system and its various devices, modules, units provided by the present invention can be fully implemented by logically programming method steps in the form of logic gates, switches, application specific integrated circuits, programmable logic controllers, embedded microcontrollers and the like. Therefore, the system and various devices, modules and units thereof provided by the invention can be regarded as a hardware component, and the devices, modules and units included in the system for realizing various functions can also be regarded as structures in the hardware component; means, modules, units for performing the various functions may also be regarded as structures within both software modules and hardware components for performing the method.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention. The embodiments and features of the embodiments of the present application may be combined with each other arbitrarily without conflict.
Claims (3)
1. A preparation method of a thermophotovoltaic power generation system based on a metamaterial heat radiator is characterized by comprising the following steps:
step 1: adopting a metamaterial heat radiator as a high-temperature radiator, and selecting silicon dioxide SiO2As the substrate of the emitter, firstly, tungsten W with the thickness of 100 nanometers is processed on the upper surface of the substrate to be used as an absorption layer, and then silicon dioxide SiO with the thickness of 400 nanometers is processed on the absorption layer2As an intermediate layer, finally processing silicon Si nano cylindrical micro-nano structures which are periodically arranged on the upper surface of the intermediate layer; the metamaterial is arranged into a one-dimensional multilayer film structure or a two-dimensional cavity structure;
step 2: adopting a gallium antimonide photovoltaic cell as a receiver photovoltaic cell, selecting the surface of an n-type GaSb wafer doped with Te to carry out zinc diffusion to form a pn junction, diffusing to form a p-type GaSb layer doped with zinc, removing the pn junction on the back of the wafer by a chemical corrosion technology, plating a negative electrode on the back of the wafer, and plating a positive electrode on the front end of the wafer;
and step 3: arranging a heat dissipation fin at the bottom of the photovoltaic cell;
and 4, step 4: acquiring a thermophotovoltaic power generation device based on a metamaterial heat radiator;
the step 1 comprises the following steps:
step 1.1: selecting flat silicon dioxide glass as a substrate of the metamaterial heat radiator, wherein the thickness of the substrate material is not less than 1 mm;
step 1.2: processing a nano tungsten layer on a substrate as an absorption layer of the emitter by magnetron sputtering, and selecting the processing thickness to be 100 nanometers;
step 1.3: processing silicon dioxide with the thickness of 400 nanometers on the surface of the tungsten layer by a plasma enhanced chemical vapor deposition method to serve as an intermediate layer; similarly, an amorphous silicon layer with the thickness of 50 nanometers is processed on the surface of the silicon dioxide by the method;
step 1.4: etching the amorphous silicon layer by using an electron beam lithography technology and a reactive ion beam etching method, wherein each super-surface structure unit comprises two silicon nano-columns with different sizes;
the step 2 comprises the following steps:
step 2.1: cleaning a GaSb wafer, degreasing by utilizing dimethylbenzene, rinsing by using acetone and methanol, soaking in a hydrochloric acid solution to remove surface oxides, cleaning by using methanol, and finally drying by using high-purity nitrogen;
step 2.2: performing zinc diffusion on the surface of the n-type GaSb wafer to form a pn junction and form a zinc-doped p-type GaSb layer;
step 2.3: after the GaSb wafer is diffused, pn junctions on the periphery and the back of the wafer are removed;
step 2.4: after diffusion, GaSb is doped with proper zinc, a photoetching mask plate with a corresponding electrode shape is firstly processed, and silver is plated on the positive electrode and the negative electrode of the wafer by using a vacuum evaporation method after glue spreading, photoetching and developing.
2. The method for preparing the thermophotovoltaic power generation system based on the metamaterial heat radiator in the claim 1, wherein the step 3 comprises the following steps:
step 3.1: the metamaterial heat radiator in the step 1 is used as an emitter of a thermophotovoltaic system to realize selective emission of a spectrum;
step 3.2: adopting the gallium antimonide photovoltaic cell in the step 2 as a receiver photovoltaic cell of a thermal photovoltaic system;
step 3.3: and the bottom of the photovoltaic cell adopts a high-performance radiating fin to radiate the photovoltaic cell.
3. The method for preparing the thermophotovoltaic power generation system based on the metamaterial heat radiator in the claim 1, wherein the step 4 comprises the following steps:
step 4.1: different high-temperature heat sources are adopted to conduct heat to the metamaterial heat radiator by utilizing heat-conducting or radiating media;
step 4.2: the metamaterial heat radiator selectively emits heat energy to the surface of the photovoltaic cell through spectrum, and the photovoltaic cell realizes the output of electric energy through a photoelectric effect.
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