CN112993136A - Light emitting diode chip, display back plate and display back plate assembling method - Google Patents
Light emitting diode chip, display back plate and display back plate assembling method Download PDFInfo
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- CN112993136A CN112993136A CN202010778814.3A CN202010778814A CN112993136A CN 112993136 A CN112993136 A CN 112993136A CN 202010778814 A CN202010778814 A CN 202010778814A CN 112993136 A CN112993136 A CN 112993136A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
The application discloses a light emitting diode chip, a display back plate and a display back plate assembling method. Because the surface of the light-emitting diode chip provided with the first electrode piece is provided with the hydrophilic layer, the surface of the light-emitting diode chip provided with the first electrode piece can keep a downward posture under the action of the hydrophilic layer, and the assembly success rate can be improved.
Description
Technical Field
The application relates to the technical field of display, in particular to a light-emitting diode chip, a display back plate and a display back plate assembling method.
Background
At present, the size of light emitting elements facing the electro-optical display industry is gradually getting smaller, and even micron-scale light emitting elements have appeared. The conventional light emitting device assembly method is to pick up the chip and place the chip on the back plate. However, if the light emitting elements of the micron order are assembled by pick-and-place, the precision of the device is extremely high. And because the number of micron-scale light-emitting elements is typically large, it takes a lot of time to adopt the traditional pick-and-place approach.
In order to improve the assembly efficiency, a mass transfer method is adopted in the industry for assembly, however, the mass transfer method is limited by the structure of the light emitting diode chip, and the transfer success rate is low.
Disclosure of Invention
In view of the foregoing disadvantages of the prior art, an object of the present application is to provide a light emitting diode chip, a display backplane, and a method for assembling the display backplane, in which a hydrophilic layer is disposed on a surface of the light emitting diode chip, so that when the light emitting diode chip is assembled in a bulk transfer manner, the light emitting diode chip maintains a posture in which the surface on which the hydrophilic layer is disposed faces downward under the action of the hydrophilic layer, thereby improving an assembly success rate.
The present application provides in a first aspect a light emitting diode chip comprising: the LED chip is provided with a first electrode piece and a hydrophilic layer, and the first electrode piece is exposed outside the hydrophilic layer.
The material forming the hydrophilic layer has greater affinity to water and can attract water molecules, so that the surface of the hydrophilic layer is easily wetted by water; this results in a greater density of the surface of the light-emitting diode chip provided with the hydrophilic layer than the surface not provided with the hydrophilic layer. When the light emitting diode chip and the driving back plate are assembled, the surface of the light emitting diode chip provided with the hydrophilic layer can keep a downward posture in the suspension liquid, and the assembly success rate is improved.
The light emitting diode chip as described above, wherein the light emitting diode chip has a first surface and a second surface which are oppositely arranged; the hydrophilic layer and the first pole element are located at the first surface; the second surface is provided with a hydrophobic layer. The first gas-liquid interface formed on the hydrophobic layer can further increase the density difference between the second surface and the first surface of the light-emitting diode chip, so that the downward posture of the first electrode element can be more stably maintained when the light-emitting diode chip is placed in the suspension liquid. Therefore, the structure of the hydrophobic layer is added, the assembly power can be further increased, and the product yield is improved.
The light emitting diode chip as described above, wherein the light emitting diode chip has a side surface located between the first surface and the second surface; the side surface is provided with a hydrophilic layer.
In the suspension, the light emitting diode chip can utilize the hydrophilic characteristic of the hydrophilic layer to keep the side surface below the second surface, so that the posture of the light emitting diode chip is settled downwards as horizontally as possible, and the light emitting diode chip is prevented from being difficult to assemble with the driving back plate due to too large inclination angle.
The light emitting diode chip as described above, wherein the material of the hydrophobic layer includes a polymer material of a silane system; the material of the hydrophilic layer comprises silicon dioxide or titanium dioxide.
A second aspect of the present application provides a display backplane comprising: the LED chip and the driving back plate; the LED chip is provided with a first electrode piece and a hydrophilic layer, and the first electrode piece is exposed out of the hydrophilic layer; the driving back plate is provided with hydrophobic pieces which are distributed at intervals, and wells are formed between the adjacent hydrophobic pieces; a second electrode piece is arranged in the trap; the light emitting diode chip is located in the well, and the first electrode piece is in contact with the second electrode piece.
When the display back plate is assembled in suspension, the structure has the following advantages: the LED chip can be settled in a suspension liquid by keeping the first electrode element in a downward posture through the hydrophilic layer; through the gas-liquid interface that forms between the hydrophobic spare, the light emitting diode chip subsides hydrophilic layer and gas-liquid interface contact back, can produce decurrent effort, and this effort is applyed for the light emitting diode chip, can make the light emitting diode chip catch fast to and can also avoid the light emitting diode chip to break away from in the trap.
The display backplane as described above, wherein the light emitting diode chip has a first surface and a second surface that are oppositely disposed; the hydrophilic layer and the first pole element are located at the first surface; the second surface is provided with a hydrophobic layer. The first gas-liquid interface formed on the hydrophobic layer can further increase the density difference between the second surface and the first surface of the light-emitting diode chip, so that the downward posture of the first electrode element can be more stably maintained when the light-emitting diode chip is placed in the suspension liquid.
The display backplane as described above, wherein the light emitting diode chips have side surfaces located between the first surface and the second surface; the side surface is provided with a hydrophilic layer. In the suspension, the LED chip can utilize the hydrophilic property of the hydrophilic layer to keep the side surface below the second surface, so that the posture of the LED chip can be settled downwards as horizontally as possible, and the LED chip is prevented from being difficult to assemble with the driving backboard due to too large inclination angle
The display back plate as described above, wherein the hydrophobic layer and the hydrophobic member are made of a polymer material of a silane system; the hydrophilic layer is made of silicon dioxide or titanium dioxide.
The display backplane as described above, wherein the first electrode member comprises a first P-pole semiconductor and two first N-pole semiconductors; the two first N-pole semiconductors are respectively positioned on two sides of the first P-pole semiconductor; the second electrode element comprises a second N-pole semiconductor and two second P-pole semiconductors; the two second P-pole semiconductors are respectively positioned at two sides of the second N-pole semiconductor; the first P-pole semiconductor and the second N-pole semiconductor are in contact; the two first N-pole semiconductors are respectively contacted with the two second P-pole semiconductors.
A third aspect of the present application provides a display backplane assembly method, where the display backplane is the display backplane according to any one of the second aspects of the present application, and the display backplane assembly method includes: placing the driving back plate in a flowing suspension; placing the light emitting diode chips in the suspension, and enabling the light emitting diode chips to move towards the driving back plate by utilizing the flowing suspension; the hydrophilic layer is utilized to keep the first electrode element facing the driving back plate in the moving process of the light-emitting diode chip; and capturing the light emitting diode chip into the trap by utilizing the hydrophilic layer and the hydrophobic part, and enabling the first electrode part and the second electrode part to be in contact.
The display back plate assembly method is used for the display back plate in the second aspect of the present application, and the hydrophilic layer is arranged on the light emitting diode chips in the display back plate, so that the light emitting diode chips can keep the first electrode members downward in the suspension. The driving back plate is provided with a hydrophobic part, so that the LED chip can be subjected to downward acting force after falling into the trap; therefore, the assembly power can be improved, the trap removal rate is reduced, and the product yield is ensured.
Drawings
Fig. 1 is a front view of a light emitting diode chip provided in an embodiment of the present application;
fig. 2 is a bottom view of a light emitting diode chip provided in an embodiment of the present application;
FIG. 3 is a front view of a display backplane provided by an embodiment of the present application;
FIG. 4 is a schematic diagram illustrating a backplane assembly process provided by an embodiment of the present application;
FIG. 5 is a flowchart of a display backplane assembly method provided by an embodiment of the present application;
fig. 6 is a schematic diagram of a manufacturing process of a light emitting diode chip according to an embodiment of the present application.
Description of reference numerals:
100-a light-emitting diode chip, 101-a first surface, 102-a second surface, 103-a side surface, 110-a hydrophobic layer, 120-a hydrophilic layer, 130-a first electrode element, 131-a first P-pole semiconductor, 132-a first N-pole semiconductor; 200-driving backboard, 210-hydrophobic part, 220-second electrode part, 221-second N-pole semiconductor, 222-second P-pole semiconductor, 230-trap, 300-suspension, 310-first gas-liquid interface, 320-second gas-liquid interface, and 330-third gas-liquid interface.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Contact angle (contact angle): the included angle from the solid-liquid interface to the gas-liquid interface through the liquid inside at the intersection of the solid, the liquid and the gas.
The preparation method is suitable for light-emitting diodes (LEDs), and is particularly suitable for micro light-emitting diodes (micro LEDs) with better light-emitting effect and higher brightness.
An alternative embodiment:
referring to fig. 1 and 2, this embodiment provides a light emitting diode chip 100, wherein a first electrode element 130 and a hydrophilic layer 120 are disposed on the light emitting diode chip 100, and the first electrode element 130 is exposed outside the hydrophilic layer 120. Optionally, the material of the hydrophilic layer 120 includes silicon dioxide or titanium dioxide.
By providing the led chip 100 with the hydrophilic layer 120, the hydrophilic layer 120 and the first electrode member 130 are located on the same surface of the led. Then, when the led chip 100 and the driving back plate 200 are assembled by using the mass transfer method, after the led chip 100 is placed in the suspension 300, because the hydrophilic layer 120 is disposed on the surface of the led chip 100 having the first electrode 130, the surface of the led chip 100 having the first electrode 130 is kept in a downward posture by the hydrophilic layer 120. The reason is that the material forming the hydrophilic layer 120 has a relatively high affinity for water, and can attract water molecules, so that the surface of the hydrophilic layer 120 is easily wetted by water; this results in a greater density of the surface of the light-emitting diode chip 100 provided with the hydrophilic layer 120 than the surface not provided with the hydrophilic layer 120, so that the surface provided with the hydrophilic layer 120 can be kept in a downward posture in the suspension 300.
In the suspension 300, the driving backplate 200 is generally placed in the suspension 300 in advance, and is located at the bottom of the container for containing the suspension 300, the surface of the led chip 100 provided with the hydrophilic layer 120 is kept in a downward posture, so that the first electrode element 130 on the same surface of the led chip 100 as the hydrophilic layer 120 can be successfully contacted with the second electrode element 220 on the driving backplate 200, and successful contact between the first electrode element 130 and the second electrode element 220 means successful assembly.
As can be seen from the above, the hydrophilic layer 120 is disposed on the surface of the led chip 100 having the first electrode element 130, so that the hydrophilic layer 120 is more hydrophilic, thereby increasing the success rate of assembly.
Further, the light emitting diode chip 100 has a first surface 101 and a second surface 102 disposed oppositely; said hydrophilic layer 120 and said first pole element 130 are located at said first surface 101; the second surface 102 is provided with a hydrophobic layer 110. Optionally, the hydrophobic layer 110 is made of a high polymer material of a silane system; for example: such as polydimethylsiloxane or poly-octadecylsiloxane.
The surface of the light emitting diode chip 100 not provided with the hydrophilic layer 120 is the second surface 102. In the case that the hydrophobic layer 110 is disposed on the second surface 102 of the led chip 100, when the led chip 100 is placed in the suspension 300 and the backplate 200 is driven to be assembled, the surface of the hydrophobic layer 110 forms a first air-liquid interface 310 protruding upward. At this time, the water-repellent layer 110 and the suspension 300 have a contact angle θ therebetween1Angle of contact theta1The value range is as follows: theta1＞90°。
The first surface 101 of the led chip 100 has a first electrode element 130 made of metal, and the first surface 101 is further provided with a hydrophilic layer 120, and the second surface 102 of the led chip 100 is provided with a hydrophobic layer 110. The first gas-liquid interface 310 formed on the hydrophobic layer 110 further increases the density difference between the second surface 102 and the first surface 101 of the led chip 100, that is, the density of the first surface 101 of the led chip 100 is further greater than that of the second surface 102, so that the first surface 101 with a higher density is turned downward under the action of buoyancy of the led chip 100, and the downward posture of the first surface 101 can be maintained. Therefore, the structure of the hydrophobic layer 110 is increased, the assembly power can be further increased, and the product yield is improved.
Optionally, the led chip 100 has a side surface 103, and the side surface 103 is located between the second surface 102 and the first surface 101; said side surface 103 is provided with a hydrophilic layer 120.
By providing the same hydrophilic layer 120 on the side surface 103 of the led chip 100 as on the first surface 101, when the led chip 100 is placed in the suspension 300, the side surface 103 of the led chip 100 also keeps the side surface 103 below the second surface 102 by utilizing the hydrophilic property of the hydrophilic layer 120, so that the led chip 100 is lowered as horizontally as possible, and the led chip 100 is prevented from being inclined at an angle too large, which makes the led chip 100 difficult to assemble with the driving backplate 200.
An alternative embodiment
Referring to fig. 1 to 4, the embodiment provides a display backplane including: a light emitting diode chip 100 and a driving back plate 200.
The light emitting diode chip 100 is provided with a first electrode 130 and a hydrophilic layer 120, and the first electrode 130 is exposed outside the hydrophilic layer 120. The driving back plate 200 is provided with hydrophobic members 210 distributed at intervals, and a well 230 is formed between adjacent hydrophobic members 210; the second pole element 220 is arranged in the well 230. The led chip 100 is located in the well 230, and the first electrode element 130 is in contact with the second electrode element 220. Alternatively, the hydrophobic layer 110 and the hydrophobic member 210 may be made of a silane-based polymer material, such as polydimethylsiloxane or poly-octadecyl siloxane; the hydrophilic layer 120 may be made of silicon dioxide, titanium dioxide, or the like.
By providing the led chip 100 with the hydrophilic layer 120, and the hydrophilic layer 120 and the first electrode member 130 are located on the same surface of the led; in addition, a hydrophobic member 210 is further provided on the driving backplate 200. Then, when assembling the led chip 100 and the driving backplate 200 by mass transfer, the driving backplate 200 is first placed in the suspension 300, and the driving backplate 200 is generally settled to the bottom of the container containing the suspension 300.
Next, the led chip 100 is placed in the suspension 300, and since the hydrophilic layer 120 is disposed on the surface of the led chip 100 having the first electrode element 130, the surface of the led chip 100 having the first electrode element 130 is kept in a downward posture by the hydrophilic layer 120. The reason is that the material forming the hydrophilic layer 120 has a relatively high affinity for water, and can attract water molecules, so that the surface of the hydrophilic layer 120 is easily wetted by water; this results in a greater density of the surface of the light-emitting diode chip 100 provided with the hydrophilic layer 120 than the surface not provided with the hydrophilic layer 120, so that the surface provided with the hydrophilic layer 120 can be kept in a downward posture in the suspension 300.
In the suspension 300, the driving back plate 200 has been placed in the suspension 300, and the surface of the led chip 100 provided with the hydrophilic layer 120 is maintained in a downward posture, so that the first electrode member 130, which is located on the same surface of the led chip 100 as the hydrophilic layer 120, can be smoothly brought into contact with the second electrode member 220 on the driving back plate 200.
In addition, since the hydrophobic members 210 are disposed on the driving back plate 200 at intervals, when the driving back plate 200 is placed in the suspension 300, a second gas-liquid interface 320 that is concave downward is formed between two adjacent hydrophobic members 210. At this time, a contact angle θ is formed between the hydrophobic member 210 and the suspension 3002Angle of contact theta2The value range is as follows: theta2> 90 deg. The radius of curvature R of the second gas-liquid interface 320 is determined by the distance between two adjacent hydrophobic members 210 and the contact angle θ2Determining, specifically: r ═ D/2cos θ2。
Under the action of capillary phenomenon, the second gas-liquid interface 320 applies an upward force PS to the suspension 3001To maintain the morphology of the second gas-liquid interface 320. The shape of the second gas-liquid interface 320 is maintained continuously, so that preparation can be made for the light emitting diode chip 100 to sink into the well 230, and the shape of the second gas-liquid interface 320 is changed subsequently, so that the assembly power is increased.
Specifically, second gas-liquid interface 320 may apply an upward force PS to suspension 3001The greater the distance between two adjacent hydrophobic members 210, the greater the upward force PS, determined by the distance between two adjacent hydrophobic members 2101The smaller. On the contrary, two adjacent sparse layersThe smaller the distance between the water members 210, the upward force PS1The larger. But the distance between two adjacent hydrophobic members 210 should not be too small, at least to ensure that the LED chip can sink into the well 230. That is, on the premise that the distance between the two hydrophobic members 210 is larger than the width of the LED chip, the second gas-liquid interface 320 applies an upward force PS to the suspension 3001And increases as the distance between the adjacent two hydrophobic members 210 decreases.
Specifically, second gas-liquid interface 320 may apply an upward force PS to suspension 3001Calculated according to the following parameters: contact angle θ between hydrophobic member 210 and suspension 3002(ii) a The surface tension gamma of the suspension 300 is the surface tension of the suspension 300 at normal temperature and normal pressure; the width D of the well 230 is a distance between two adjacent hydrophobic members 210.
In detail, the upward force PS applied to the suspension 300 by the second gas-liquid interface 3201Angle of contact theta2The surface tension γ and the width D satisfy the following relationship:
PS1＝(2γcosθ2)/D。
after the light emitting diode chip 100 is settled to the hydrophilic layer 120 and the second gas-liquid interface 320, the second gas-liquid interface 320 is changed into the third gas-liquid interface 330 protruding upward under the action of the hydrophilic layer 120.
Under the condition that the second gas-liquid interface 320 is formed on the driving backplate 200, after the led chip 100 keeps the downward posture of the first electrode element 130 and settles down until the hydrophilic layer 120 contacts the second gas-liquid interface 320, the hydrophilic layer 120 changes the form of the second gas-liquid interface 320, so that the second gas-liquid interface 320 becomes the upward convex third gas-liquid interface 330. At this time, the suspension 300 applies a downward force to the third gas-liquid interface 330, and the downward force acts on the led chip 100, so that the led chip 100 smoothly sinks into the well 230. The downward acting force can improve the capture rate of the led chip 100, and can continuously act on the led chip 100 after the led chip 100 completely sinks into the well 230, so as to prevent the led chip 100 from separating from the well 230 and reduce the trap 230 rate.
Specifically, the downward force PS generated by the third gas-liquid interface 3302The greater the distance between two adjacent hydrophobic members 210, the greater the downward force PS, determined by the distance between two adjacent hydrophobic members 2102The smaller. Conversely, the smaller the distance between two adjacent hydrophobic members 210, the lower the downward force PS2The larger. However, the distance between two adjacent hydrophobic members 210 should not be too small, and the distance is at least to ensure that the led chip 100 can sink into the well 230. That is, on the premise that the distance between the two hydrophobic members 210 is greater than the width of the led chip 100, the downward acting force PS generated by the third gas-liquid interface 3302And increases as the distance between the adjacent two hydrophobic members 210 decreases.
Specifically, the third gas-liquid interface 330 applies a downward force PS to the LED chip 1002Calculated according to the following parameters: the contact angle θ formed between the hydrophobic member 210 and the suspension 3003Angle of contact theta3The value range is as follows: theta3< 90 DEG and cos theta3＞0＞cosθ2(ii) a Surface tension γ of suspension 300; the width D of the well 230 is a distance between two adjacent hydrophobic members 210.
In detail, the downward force PS generated by the third gas-liquid interface 3302Angle of contact theta3The surface tension γ and the width D satisfy the following relationship:
PS2＝(2γcosθ3)/D。
contact angle theta3And the surface tension gamma of the suspension 300 is substantially determined by the materials of the hydrophobic member 210 and the suspension 300, after which the contact angle theta is determined3And the surface tension gamma of the suspension 300 belong to a fixed value. At this time, a person skilled in the art can set a reasonable distance between adjacent hydrophobic members 210 to obtain a proper downward force; and the distance between the adjacent water-repellent members 210 is reduced, the width D of the trap 230 is reduced accordingly, and the downward force generated from the third gas-liquid interface 330 is increased.
As can be seen from the above, the display back plate provided in this embodiment is configured to keep the first electrode element 130 downward in the suspension 300 by disposing the hydrophilic layer 120 on the led chip 100; by arranging the hydrophobic member 210 on the driving back plate 200, the led chip 100 can be subjected to a downward force after falling into the well 230; therefore, the assembly power can be improved, the trap 230 removing rate is reduced, and the product yield is ensured.
Further, the light emitting diode chip 100 has a second surface 102 and a first surface 101 which are oppositely arranged; said hydrophilic layer 120 and said first pole element 130 are located at said second surface 102; the first surface 101 is provided with a hydrophobic layer 110.
In the case that the hydrophobic layer 110 is disposed on the second surface 102 of the led chip 100, when the led chip 100 is placed in the suspension 300 and the backplate 200 is driven to be assembled, the surface of the hydrophobic layer 110 forms a first air-liquid interface 310 protruding upward. At this time, the water-repellent layer 110 and the suspension 300 have a contact angle θ therebetween1Angle of contact theta1The value range is as follows: theta1＞90°。
The first surface 101 of the led chip 100 has a first electrode element 130 made of metal, and the first surface 101 is further provided with a hydrophilic layer 120, the second surface 102 of the led chip 100 is provided with a hydrophobic layer 110, and a first gas-liquid interface 310 is formed on the surface of the hydrophobic layer 110 in the suspension 300. As mentioned above, the hydrophilic layer 120 may cause a density difference between the first surface 101 and the second surface 102 of the light emitting diode chip 100. Then, the first gas-liquid interface 310 further increases the density difference between the second surface 102 and the first surface 101 of the led chip 100, that is, after the hydrophobic layer 110 is disposed, the density of the first surface 101 of the led chip 100 is even greater than that of the second surface 102. Therefore, the first surface 101 with higher density of the light emitting diode chip 100 can be turned downwards under the action of buoyancy, and the downward posture of the first surface 101 can be maintained. Therefore, the structure of the hydrophobic layer 110 is increased, the assembly power can be further increased, and the product yield is improved.
Optionally, the led chip 100 has a side surface 103, and the side surface 103 is located between the second surface 102 and the first surface 101; said side surface 103 is provided with a hydrophilic layer 120.
By providing the same hydrophilic layer 120 on the side surface 103 of the led chip 100 as on the first surface 101, when the led chip 100 is placed in the suspension 300, the side surface 103 of the led chip 100 also keeps the side surface 103 below the second surface 102 by utilizing the hydrophilic property of the hydrophilic layer 120, so that the led chip 100 is lowered as horizontally as possible, and the led chip 100 is prevented from being inclined at an angle too large, which makes the led chip 100 difficult to assemble with the driving backplate 200.
Further, the first electrode member 130 includes a first P-pole semiconductor 131 and two first N-pole semiconductors 132; the two first N-pole semiconductors 132 are respectively located at two sides of the first P-pole semiconductor 131. The second electrode element 220 includes a second N-pole semiconductor 221 and two second P-pole semiconductors 222; the two second P-type semiconductors 222 are respectively located at two sides of the second N-type semiconductor 221. The first P-pole semiconductor 131 and the second N-pole semiconductor 221 are in contact; the two first N-pole semiconductors 132 are in contact with the two second P-pole semiconductors 222, respectively.
That is, the first electrode element 130 and the second electrode element 220 are both P-N type semiconductor devices, and the electrode element with the structure has the advantages of simple structure, convenience in processing and low cost. And the first electrode element 130 and the second electrode element 220 are relatively simple to match, so that the situation that the first electrode element 130 and the second electrode element 220 are connected wrongly to cause subsequent short circuit when the light emitting diode chip 100 falls into the well 230 can be avoided.
An alternative embodiment
Referring to fig. 5, the present embodiment provides a display backplane assembly method, which may be used to assemble a display backplane according to any embodiment of the present application, and the display backplane assembly method includes:
step S1: the driving backplate 200 is placed in a flowing suspension 300. The suspension 300 may be deionized water or isopropyl alcohol, etc.
Since the hydrophobic members 210 are disposed on the driving back plate 200 at intervals, when the driving back plate 200 is placed in the suspension 300, a second gas-liquid interface 320 is formed between two adjacent hydrophobic members 210 and is recessed downward.
Under the action of capillary phenomenon, the second gas-liquid interface 320 applies an upward force to the suspension 300 to maintain the form of the second gas-liquid interface 320. The shape of the second gas-liquid interface 320 is maintained continuously, so that preparation can be made for the light emitting diode chip 100 to sink into the well 230, and the shape of the second gas-liquid interface 320 is changed subsequently, so that the assembly power is increased.
Step S2: the led chips 100 are placed in the suspension 300, and the led chips 100 are moved toward the driving back plate 200 by the flowing suspension 300.
The flow rate of the suspension 300 needs to be set according to the weight of the led chip 100, so that the led chip 100 can sink into the well 230 without the led chip 100 moving horizontally and being difficult to sink into the well 230 due to too high flow rate. And the light emitting diode chip 100 is not vertically lowered due to the too low flow rate, so that the light emitting diode chip 100 cannot be aligned with the well 230. The specific flow rate can be determined based on the above principle according to actual demand experiments.
Step S3: the hydrophilic layer 120 is utilized to keep the first electrode element 130 facing the driving back plate 200 during the movement of the led chip 100.
Because the material forming the hydrophilic layer 120 has a relatively high affinity for water, and can attract water molecules, the surface of the hydrophilic layer 120 is easily wetted by water; this results in a greater density of the surface of the light-emitting diode chip 100 provided with the hydrophilic layer 120 than the surface not provided with the hydrophilic layer 120, so that the surface provided with the hydrophilic layer 120 can be kept in a downward posture in the suspension 300.
Of course, in an embodiment, the light emitting diode chip 100 is further provided with a hydrophobic layer 110, the hydrophobic layer 110 forms a first air-liquid interface 310 in the suspension 300, the first air-liquid interface 310 may further increase the density difference between the second surface 102 and the first surface 101 of the light emitting diode chip 100, that is, after the hydrophobic layer 110 is provided, the density of the first surface 101 of the light emitting diode chip 100 is more greater than that of the second surface 102. Thereby increasing the stability of the light emitting diode chip 100 with the first electrode member 130 facing downward.
Step S4: the led chip 100 is captured into the well 230 by the hydrophilic layer 120 and the hydrophobic member 210, and the first electrode member 130 and the second electrode member 220 are brought into contact with each other.
After the light emitting diode chip 100 is settled to the hydrophilic layer 120 and the second gas-liquid interface 320, the second gas-liquid interface 320 is changed into the third gas-liquid interface 330 protruding upward under the action of the hydrophilic layer 120.
Under the condition that the second gas-liquid interface 320 is formed on the driving backplate 200, after the led chip 100 keeps the downward posture of the first electrode element 130 and settles down until the hydrophilic layer 120 contacts the second gas-liquid interface 320, the hydrophilic layer 120 changes the form of the second gas-liquid interface 320, so that the second gas-liquid interface 320 becomes the upward convex third gas-liquid interface 330. At this time, the suspension 300 applies a downward force to the third gas-liquid interface 330, and the downward force acts on the led chip 100, so that the led chip 100 smoothly sinks into the well 230. The downward acting force can improve the capture rate of the light emitting diode chip on one hand, and on the other hand, can continuously act on the light emitting diode chip 100 after the light emitting diode chip 100 completely sinks into the well 230, so that the light emitting diode chip 100 is prevented from being separated from the well 230, and the well 230 separation rate is reduced.
As can be seen from the above, in the display backplane assembly method provided in this embodiment, since the hydrophilic layer 120 is disposed on the led chip 100, the led chip 100 keeps the first electrode 130 downward in the suspension 300; the driving back plate 200 is provided with a hydrophobic member 210, so that the led chip 100 can be subjected to a downward acting force after falling into the well 230; therefore, the assembly power can be improved, the trap 230 removing rate is reduced, and the product yield is ensured.
It will be understood by those skilled in the art that the led chips and the driving backplane need to be prepared before they are assembled.
Referring to fig. 6, the following method may be specifically adopted to prepare the light emitting diode chip:
s11: providing a light emitting diode chip 100 a; the first surface 102 of the light emitting diode chip 100a has a first electrode member 130.
S12: hydrophilic layer 120 is prepared on first surface 102 of led chip 100 a. Specifically, S12 includes the steps of:
s121: attaching the light emitting diode chip 100a on a substrate; the second surface 101 of the led chip 100a is in contact with the substrate, and the first surface 102 of the led chip 100a faces away from the substrate.
S122: a hydrophilic layer 120 is formed on the first surface 102 of the led chip 100 by a chemical vapor deposition method to obtain a led chip 100 c.
Specifically, a hydrophilic layer 120 is formed on the first surface 102 of the led chip 100 by a chemical vapor deposition method, the hydrophilic layer 120 covers the first electrode element 130, the state of the led chip 100 is shown as 100b in fig. 4, and then the first electrode element 130 is exposed by exposure, development and etching, so as to obtain the led chip 100 c.
The chemical vapor deposition method is used to prepare the hydrophilic layer 120, so that the required device is simple, and thus the cost can be reduced. In addition, reaction raw materials used by the chemical vapor deposition method are easy to obtain, different chemical reactions can be selected during preparation, and the flexibility is high.
S13: a hydrophobic layer 110 is prepared on the second surface 101 of the light emitting diode chip 100c to obtain the light emitting diode chip 100 d. S13 may be specifically implemented in two ways, as detailed below:
the first method comprises the following steps:
s131: removing the substrate attached to the light emitting diode chip 100c by a grinding method;
s132: after removing the substrate, a hydrophobic layer 110 is formed on the second surface 101 of the led chip 100c by a chemical vapor deposition method, so as to obtain the led chip 100 d.
The mode of removing the substrate by adopting a grinding method has simpler operation, can shorten the manufacturing process and quicken the production beat.
And the second method comprises the following steps:
s131 and 131 a: adhering the light emitting diode chip 100c to a substrate;
s132 a: removing the substrate attached to the light emitting diode chip 100c by a laser cutting method;
s133 a: after removing the substrate, a hydrophobic layer 110 is formed on the second surface 101 of the led chip 100c by a chemical vapor deposition method, so as to obtain the led chip 100 d.
The substrate can be completely removed by removing the substrate by laser cutting, so that the light emitting diode chip 100 is very thin, the weight can be reduced, and the light transmittance can be enhanced.
In addition, the hydrophobic layer 110 is prepared by the chemical vapor deposition method in both modes, the advantages of the method are the same as those of the method for preparing the hydrophilic layer 120 by the chemical vapor deposition method, and the cost can be further reduced because a required device is simple.
It should be emphasized that in this embodiment, the reference to the upward projection and the downward depression is made to the bottom of the container for the suspension. That is, the first gas-liquid interface is raised upwardly relative to the bottom of the container; the second gas-liquid interface is concave downward relative to the bottom of the container, and the third gas-liquid interface is convex upward relative to the bottom of the container.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A light emitting diode chip, comprising:
the LED chip is provided with a first electrode piece and a hydrophilic layer, and the first electrode piece is exposed outside the hydrophilic layer.
2. The light-emitting diode chip of claim 1, wherein the light-emitting diode chip has a first surface and a second surface that are oppositely disposed; the hydrophilic layer and the first pole element are located at the first surface; the second surface is provided with a hydrophobic layer.
3. The light-emitting diode chip of claim 2, wherein the light-emitting diode chip has a side surface located between the first surface and the second surface; the side surface is provided with a hydrophilic layer.
4. The light-emitting diode chip as claimed in claim 2 or 3, wherein the material of the hydrophobic layer comprises a polymer material of silane system; the material of the hydrophilic layer comprises silicon dioxide or titanium dioxide.
5. A display backplane, comprising: the LED chip and the driving back plate;
the LED chip is provided with a first electrode piece and a hydrophilic layer, and the first electrode piece is exposed out of the hydrophilic layer;
the driving back plate is provided with hydrophobic pieces which are distributed at intervals, and wells are formed between the adjacent hydrophobic pieces; a second electrode piece is arranged in the trap;
the light emitting diode chip is located in the well, and the first electrode piece is in contact with the second electrode piece.
6. The display backplane of claim 5, wherein the light emitting diode chips have first and second surfaces disposed opposite one another; the hydrophilic layer and the first pole element are located at the first surface; the second surface is provided with a hydrophobic layer.
7. The display backplane of claim 6, wherein the light emitting diode chips have side surfaces located between the first surface and the second surface; the side surface is provided with a hydrophilic layer.
8. The display backplane of claim 6, wherein the hydrophobic layer and the hydrophobic member are made of a polymeric material comprising a silane system; the material of the hydrophilic layer comprises silicon dioxide or titanium dioxide.
9. The display backplane according to any of the claims 5 to 8, wherein the first electrode element comprises a first P-pole semiconductor and two first N-pole semiconductors; the two first N-pole semiconductors are respectively positioned on two sides of the first P-pole semiconductor;
the second electrode element comprises a second N-pole semiconductor and two second P-pole semiconductors; the two second P-pole semiconductors are respectively positioned at two sides of the second N-pole semiconductor;
the first P-pole semiconductor and the second N-pole semiconductor are in contact; the two first N-pole semiconductors are respectively contacted with the two second P-pole semiconductors.
10. A display backplane assembly method, wherein the display backplane is the display backplane of any one of claims 5 to 9, the display backplane assembly method comprising:
placing the driving back plate in a flowing suspension;
placing the light emitting diode chips in the suspension, and enabling the light emitting diode chips to move towards the driving back plate by utilizing the flowing suspension;
the hydrophilic layer is utilized to keep the first electrode element facing the driving back plate in the moving process of the light-emitting diode chip;
and capturing the light emitting diode chip into the trap by utilizing the hydrophilic layer and the hydrophobic part, and enabling the first electrode part and the second electrode part to be in contact.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110828646A (en) * | 2018-08-09 | 2020-02-21 | 汕头超声显示器技术有限公司 | Manufacturing method of micro LED display |
| CN111223798A (en) * | 2019-11-29 | 2020-06-02 | 北京京东方光电科技有限公司 | Mass transfer method and device of light emitting diode |
| CN111261653A (en) * | 2018-11-30 | 2020-06-09 | 昆山工研院新型平板显示技术中心有限公司 | Micro light emitting diode, display panel and transfer method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110828646A (en) * | 2018-08-09 | 2020-02-21 | 汕头超声显示器技术有限公司 | Manufacturing method of micro LED display |
| CN111261653A (en) * | 2018-11-30 | 2020-06-09 | 昆山工研院新型平板显示技术中心有限公司 | Micro light emitting diode, display panel and transfer method thereof |
| CN111223798A (en) * | 2019-11-29 | 2020-06-02 | 北京京东方光电科技有限公司 | Mass transfer method and device of light emitting diode |
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