CN112985628A - Temperature monitoring circuit and method - Google Patents
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Abstract
The embodiment of the application provides a temperature monitoring circuit and a temperature monitoring method, which can set a proper voltage temperature coefficient in an implementation condition. The temperature monitoring circuit 1 has a temperature detection circuit 10, and the temperature detection circuit 10 uses the base-emitter voltage V of the transistors Q1, Q2BEGenerating a 1 st output voltage (V) according to the temperatureout1) The temperature monitoring circuit 10 has: a voltage drop circuit 30 for outputting the 1 st output voltage (V)out1) Conversion to the 2 nd output voltage (V)out3) The 2 nd output voltage (V)out3) The base-emitter voltage V of the voltage drop transistors (Q3, Q4) having the same characteristics as those of the transistors Q1, Q2 is usedBEMake the 1 st output voltage (V)out1) And increasing the temperature coefficient of the voltage; and an amplifier circuit 20a which outputs the 2 nd inputVoltage (V)out3) Conversion to the 3 rd output voltage (V)out4) The 3 rd output voltage (V)out4) Is to make the 2 nd output voltage (V)out3) Increasing and further increasing the temperature coefficient of the voltage.
Description
Technical Field
The embodiments of the present application relate to the field of semiconductor devicesThe field of conductor technology, in particular to a base-emitter voltage V using a transistorBETo a temperature monitoring circuit and method.
Background
A temperature monitor (monitor) circuit is a circuit that varies an output voltage with a temperature change. Base-emitter voltage V using transistor that varies according to ambient temperatureBEThe temperature monitoring circuit of (2) is less expensive than a temperature monitoring circuit using a thermistor, and has an advantage that an output is linear, but detection accuracy is slightly poor.
Therefore, when the slope of the temperature characteristic is small and the detected temperature error is large, the output is amplified by the amplifier circuit, and the voltage temperature coefficient is increased to improve the detected temperature error (for example, refer to patent document 1).
Patent document 1: WO2014/123046
It should be noted that the above background description is only for the convenience of clear and complete description of the technical solutions of the present application and for the understanding of those skilled in the art. Such solutions are not considered to be known to the person skilled in the art merely because they have been set forth in the background section of the present application.
Disclosure of Invention
However, the inventors found that: in the temperature monitoring circuit, a practical temperature range (an actually used temperature range, for example, 25 to 150 ℃) and an output level limit range (for example, 0V to 4.5V) are set as implementation conditions. When the output voltage is simply amplified to achieve the target detected temperature error, there is a problem that the output voltage level rises as a whole to increase to the intercept, and the output voltage level is not limited.
In view of at least one of the above problems, embodiments of the present application provide a temperature monitoring circuit and a method, which can set an appropriate voltage temperature coefficient within implementation conditions.
According to an aspect of the embodiments of the present application, there is provided a temperature monitoring circuit having a temperature detection circuit that generates a 1 st output voltage according to a temperature using a base-emitter voltage of a transistor,
the temperature monitoring circuit further has:
a voltage drop circuit that converts the 1 st output voltage into a 2 nd output voltage, the 2 nd output voltage being obtained by dropping a voltage of the 1 st output voltage and increasing a voltage temperature coefficient of the 1 st output voltage using a base-emitter voltage of a voltage drop transistor having the same characteristics as the transistor; and
an amplifier circuit that converts the 2 nd output voltage into a 3 rd output voltage, the 3 rd output voltage being obtained by increasing the 2 nd output voltage and increasing a voltage temperature coefficient of the 2 nd output voltage.
According to another aspect of the embodiments of the present application, there is provided a temperature monitoring method using a base-emitter voltage of a transistor and generating a 1 st output voltage according to a temperature, the temperature monitoring method further comprising:
converting the 1 st output voltage into a 2 nd output voltage, the 2 nd output voltage being obtained by reducing the voltage of the 1 st output voltage and increasing the voltage temperature coefficient of the 1 st output voltage using the base-emitter voltage of a voltage-reduction transistor having the same characteristics as the transistor; and
and converting the 2 nd output voltage into a 3 rd output voltage, wherein the 3 rd output voltage is obtained by increasing the 2 nd output voltage and increasing the voltage temperature coefficient of the 2 nd output voltage.
One of the beneficial effects of the embodiment of the application lies in: since the intercept at the time of the lower limit and/or the upper limit of the practical temperature range can be changed together with the voltage temperature coefficient, there is an effect that an appropriate voltage temperature coefficient can be set within the implementation conditions.
Specific embodiments of the present application are disclosed in detail with reference to the following description and drawings, indicating the manner in which the principles of the application may be employed. It should be understood that the embodiments of the present application are not so limited in scope. The embodiments of the application include many variations, modifications and equivalents within the spirit and scope of the appended claims.
Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments, in combination with or instead of the features of the other embodiments.
It should be emphasized that the term "comprises/comprising" when used herein, is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.
Drawings
Elements and features described in one drawing or one implementation of an embodiment of the application may be combined with elements and features shown in one or more other drawings or implementations. Moreover, in the drawings, like reference numerals designate corresponding parts throughout the several views, and may be used to designate corresponding parts for use in more than one embodiment.
Fig. 1 is a schematic diagram of a structure of a temperature monitoring circuit in the related art;
FIG. 2 is an exemplary graph illustrating an output voltage of the temperature monitoring circuit shown in FIG. 1;
FIG. 3 is a schematic diagram showing the structure of a temperature monitoring circuit according to an embodiment of the present application;
FIG. 4 is an exemplary graph illustrating the output voltage of the temperature monitoring circuit shown in FIG. 3;
FIG. 5 is another schematic diagram of a temperature monitoring circuit according to an embodiment of the present application;
FIG. 6 is a graph showing an example of the relationship between temperature and voltage and current in the related art;
FIG. 7 is a graph illustrating an example of the relationship between temperature and voltage and current for an embodiment of the present application;
FIG. 8 is another schematic diagram of a temperature sensing circuit and a temperature monitoring circuit according to an embodiment of the present application;
FIG. 9 is a schematic diagram of a temperature monitoring method according to an embodiment of the present application.
Description of the reference symbols
1. 100, and (2) a step of: a temperature monitoring circuit; 10: a temperature detection circuit; 20. 20 a: an amplifier circuit; 30: a voltage drop circuit; 11-16: a constant current source; Q1-Q4: a transistor; r3, R4, R7, R8: a feedback resistance.
Detailed Description
The foregoing and other features of the present application will become apparent from the following description, taken in conjunction with the accompanying drawings. In the description and drawings, particular embodiments of the application are disclosed in detail as being indicative of some of the embodiments in which the principles of the application may be employed, it being understood that the application is not limited to the described embodiments, but, on the contrary, is intended to cover all modifications, variations, and equivalents falling within the scope of the appended claims.
In the embodiments of the present application, the terms "first", "second", and the like are used for distinguishing different elements by reference, but do not denote a spatial arrangement, a temporal order, or the like of the elements, and the elements should not be limited by the terms. The term "and/or" includes any and all combinations of one or more of the associated listed terms. The terms "comprising," "including," "having," and the like, refer to the presence of stated features, elements, components, and do not preclude the presence or addition of one or more other features, elements, components, and elements.
In the embodiments of the present application, the singular forms "a", "an", and the like include the plural forms and are to be construed broadly as "a" or "an" and not limited to the meaning of "a" or "an"; furthermore, the term "comprising" should be understood to include both the singular and the plural, unless the context clearly dictates otherwise. Further, the term "according to" should be understood as "at least partially according to … …," and the term "based on" should be understood as "based at least partially on … …," unless the context clearly dictates otherwise.
Fig. 1 is a schematic diagram of a structure of a temperature monitoring circuit in the related art. As shown in fig. 1, the temperature monitoring circuit 100 includes a temperature detection circuit 10 and an amplifier circuit 20, and the temperature detection circuit 10 outputs an output voltage V that changes with a change in temperatureout1The output of the amplifier circuit 20 will beOutput voltage Vout1Amplified output voltage Vout2。
As shown in FIG. 1, the temperature detection circuit 10 includes constant current sources 11 to 14, resistors R1 and R2, and transistors Q1 and Q2. One end of the constant current source 11 is connected to the power supply voltage Vcc, and generates a constant current from the power supply voltage Vcc. The resistors R1 and R2 are connected in series between the other end of the constant current source 11 and ground (ground).
As shown in fig. 1, the constant current source 12 and the constant current source 13 are each connected at one end to the power supply voltage Vcc, and generate the same constant current from the power supply voltage Vcc, respectively. The other end of the constant current source 12 is connected to the collector of a transistor Q1 formed of an NPN transistor, and supplies the generated constant current to the collector of the transistor Q1. The other end of the constant current source 13 is connected to the collector of a transistor Q2 formed of an NPN transistor, and supplies the generated constant current to the collector of the transistor Q2.
As shown in fig. 1, the base of the transistor Q1 is connected to the connection point between the resistors R1 and R2, the base of the transistor Q2 is connected to the connection point between the other end of the constant current source 11 and the resistor R2, and the emitters of the transistor Q1 and the transistor Q2 are connected to one end of the constant current source 14. In addition, the voltage of the connection point between the emitters of the transistors Q1 and Q2 and one end of the constant current source 14 is taken as the output voltage Vout1And (6) outputting.
Here, when the bandgap zener voltage generated between both ends of the resistor R2 is set to Δ VBEV represents the voltage between the base and the emitter of the transistor Q1BETime, output voltage Vout1Can be expressed by the following equation 1.
Vout1＝ΔVBE(R1/R2)-VBE… … equation 1
Further, when the transistor Q1 and the transistor Q2 have the same temperature characteristics, the emitter area ratio is set to 10: 1, the voltage across the resistor R2 is set to Δ VBEAnd can be expressed by the following formula 2.
ΔVBE(K × T/q) × In10 … … formula 2
Where K is the Boltzmann constant, q is the unit charge, and T is the absolute temperature.
Further, the base-emitter voltage of the transistor Q1 is set to VBEAnd is in
VBE＝Vg-0.002 x T … … formula 3
Band gap voltage VgWhen 1.11V is satisfied, equations 2 and 3 are substituted into equation 1, and at this time
Vout1{ (K/q) × In10 × (R1/R2) +0.002} × T-1.11 … … formula 4
Output voltage Vout1The voltage temperature coefficient of (a) { (K/q) × In10 { (R1/R2) +0.002 }.
As shown in fig. 1, the amplifier circuit 20 includes an operational amplifier AMP and feedback resistors R3 and R4. Output voltage Vout1The voltage is input to a non-inverting input terminal of the operational amplifier AMP, and the output of the operational amplifier AMP is divided by feedback resistors R3 and R4 and supplied to an inverting input terminal to form a non-inverting amplifier circuit. Therefore, the amplifier circuit 20 outputs the output voltage Vout1Amplified by (1+ R3/R4) times output voltage Vout2。
Fig. 2 is an exemplary graph illustrating an output voltage of the temperature monitoring circuit shown in fig. 1. In FIG. 2, the output voltage V with a voltage temperature coefficient of (10 mV/. degree. C.) is shownout1(ii) a In addition, the output voltage V is shownout2The output voltage Vout2The voltage temperature coefficient is increased (24 mV/DEG C) to improve the detected temperature error, and the output voltage V is amplified in the amplifier circuit 20out2Is set to an output voltage Vout12.4 times of the total weight of the powder.
Due to the output voltage Vout2Is an output voltage Vout12.4 times of, thereby
Vout2＝2.4*{(K/q)*In10*(R1/R2)+0.002}*T-2.4*1.11
Therefore, as shown in FIG. 2, when the upper limit of the practical temperature band (150 ℃ C. as shown in FIG. 2) has not been reached, the output voltage V is setout2The output characteristic of (2) fluctuates above the output level limit range and cannot be used. Therefore, there is a problem that the output voltage level rises as a whole to increase to the intercept, and gets rid of the limitation of the output voltage level. The following describes embodiments of the present application with respect to at least one of the above-described problems.
Embodiments of the first aspect
The embodiment of the application provides a temperature monitoring circuit.
Fig. 3 is a schematic diagram of a temperature monitoring circuit according to an embodiment of the present disclosure. As shown in fig. 3, the temperature monitoring circuit 1 has a temperature detection circuit 10, a voltage drop circuit 30, and an amplifier circuit 20 a. The temperature detection circuit 10 outputs an output voltage V that varies with a temperature changeout1The voltage drop circuit 30 outputs the changed output voltage Vout1Voltage temperature coefficient ofout3The amplifier circuit 20a outputs a pair of output voltages Vout3Amplified voltage Vout4。
As shown in fig. 3, the voltage drop circuit 30 includes constant current sources 15 and 16, transistors Q3 and Q4, and resistors R5 and R6. The transistors Q3 and Q4 are NPN transistors having the same temperature characteristics as the transistors Q1 and Q2 of the temperature detection circuit 10.
It should be noted that fig. 3 above only schematically illustrates the temperature monitoring circuit according to the embodiment of the present application, but the present application is not limited thereto. For example, the connection relationship between the modules or components may be adjusted appropriately, and some other modules or components may be added or some modules or components may be reduced. Those skilled in the art can appropriately modify the above description without being limited to the description of fig. 3.
As shown in FIG. 3, one end of the constant current source 15 is connected to the power supply voltage VccAnd the other end is connected to the collector of the transistor Q3, and supplies the generated constant current to the collector of the transistor Q3. The base of the transistor Q3 and the output terminal (output voltage V) of the temperature detection circuit 10out1) The emitter of the transistor Q3 is connected to ground via a resistor R5.
As shown in FIG. 3, one end of the constant current source 16 is connected to the power supply voltage VccAnd the other end is connected to the collector of the transistor Q4, and supplies the generated constant current to the collector of the transistor Q4. Base and crystal of transistor Q4The emitter of the transistor Q3 is connected, and the emitter of the transistor Q4 is grounded via a resistor R6. The voltage of the emitter of the transistor Q4 is taken as the output voltage Vout3Output from the voltage drop circuit 30.
Here, the base-emitter voltages V of the transistors Q3, Q4BEAre respectively
VBE＝Vg-0.002*T
Therefore, the output voltage V from the voltage drop circuit 30out3Is from Vout1Subtract 2VBEAfter that
Vout3{ (K/q) × In10 × (R1/R2) +3 × 0.002} × T-3 × 1.11 … … formula 5
In addition, Vg＝1.11V。
According to equation 5, for example, Vout3The voltage temperature coefficient of (1) increases (4 mV/. degree.C.), and the intercept decreases by 2.22V when T is 0K-273 ℃.
As shown in fig. 3, the amplifier circuit 20a has an operational amplifier AMP and feedback resistors R7, R8. Output voltage Vout3The voltage is input to a non-inverting input terminal of the operational amplifier AMP, and the output of the operational amplifier AMP is divided by feedback resistors R7 and R8 and supplied to an inverting input terminal, thereby constituting a non-inverting amplifier circuit. Thus, the amplifier circuit 20 outputs the pass output voltage Vout3An output voltage V obtained by multiplying (1+ R7/R8)out4。
Fig. 4 is an exemplary graph illustrating an output voltage of the temperature monitoring circuit shown in fig. 3. In FIG. 4, the output voltage V with a voltage temperature coefficient of (10 mV/. degree. C.) is shownout1The output voltage V is controlled by the transistors Q3 and Q4 having the same temperature characteristics as the transistors Q1 and Q2out1Reduced output voltage Vout3And the output voltage V is made to pass through the amplifier circuit 20aout3Output voltage V amplified by 1.7 timesout4。
For example, the output voltage V is a voltage with a temperature coefficient of (10 mV/. degree.C.)out1The voltage temperature coefficient increased (4 mV/DEG C) to (14 mV/DEG C), and the intercept at T0K-273 ℃ decreased by 2.22V (from-1.11V to-3.33V, as shown in FIG. 4), so Vout3At practical temperatureThe lower limit of the bandwidth (e.g., 25 ℃) is within a range from the lower limit of the output level limit range to within 10% (e.g., 0.2V) + the output level limit range (e.g., 4.5V).
For example, when the lower limit of the practical temperature range is 25 ℃, the output level limit range is 0V to 4.5V, the lower limit of the output level limit range is 0, and when the predetermined value is within 10% (for example, 0.2) of the output level limit range (4.5), the first value of the lower limit plus the predetermined value is 0.2. Thus, Vout3The lower limit of the practical temperature range (e.g., 25 ℃) is in the range of 0V to 0.2V. Only the lower limit value, the predetermined value, and the first value have been exemplarily described above, and the embodiment of the present application is not limited thereto.
In other words, the voltage dropping circuit 30 will output the voltage Vout1Is converted into an output voltage V having an output characteristicout3: at the lower limit of the practical temperature range, the temperature is limited by a range from the lower limit of the output level limit range to within + 10% of the output level limit range.
Moreover, since the output voltage V isout4Is an output voltage Vout31.7 times of that of the compound, thus
Vout4＝1.7*{(K/q)*In10*(R1/R2)+0.002}*T－1.7*3*1.11
Thus, for example, Vout4The voltage temperature coefficient of (1) increased to (23.8 mV/. degree.C.). Furthermore, as shown in FIG. 4, even if V is set to Vout4To the output voltage V of the prior artout2Same level, Vout4The output characteristic (c) is within the range from the upper limit of the output level limitation range to within 10% (for example, 4.4V) of the output level limitation range (for example, 4.5V) at the upper limit (for example, 150 c) of the practical temperature range, and therefore also falls within the implementation condition.
For example, if the upper limit of the practical temperature range is 150 ℃, the output level limit range is 0V to 4.5V, the upper limit of the output level limit range is 4.5, and if the predetermined value is within 10% (e.g., 0.1) of the output level limit range (4.5), the second value obtained by subtracting the predetermined value from the upper limit is 4.4. Thus, Vout3At the upper limit of the practical temperature zone (e.g. 150 ℃), is at 4.5VRange of 4.4V. Only the upper limit value, the predetermined value, and the second value have been exemplarily described above, and the embodiment of the present application is not limited thereto.
In other words, the amplifier circuit 20a outputs the voltage Vout3Is converted into an output voltage V having an output characteristicout4: at the upper limit of the practical temperature band (e.g., 150 ℃), the temperature is controlled in a range from the upper limit of the output level limit range to within-10% (e.g., 4.4V) of the output level limit range (e.g., 4.5V).
Further, according to the embodiment of the present application, even if the gain of the amplifier circuit 20a is suppressed (1.7 times) compared with the gain of the conventional amplifier circuit 20a, the voltage temperature coefficient can be increased to substantially the same value. Therefore, the spread of the variation in the output characteristics of the temperature detection circuit 10 can be suppressed.
As explained above, according to some embodiments of the present application, the temperature monitoring circuit 1 has the temperature detection circuit 10, and the temperature detection circuit 10 uses the base-emitter voltage V of the transistors Q1, Q2BEGenerating a 1 st output voltage (V) according to the temperatureout1) The temperature monitoring circuit 10 has: a voltage drop circuit 30 for outputting the 1 st output voltage (V)out1) Conversion to the 2 nd output voltage (V)out3) The 2 nd output voltage (V)out3) The base-emitter voltage V of the voltage drop transistors (Q3, Q4) having the same characteristics as those of the transistors Q1, Q2 is usedBEMake the 1 st output voltage (V)out1) And increasing the temperature coefficient of the voltage; and an amplifier circuit 20a for outputting the 2 nd output voltage (V)out3) Conversion to the 3 rd output voltage (V)out4) The 3 rd output voltage (V)out4) Is to make the 2 nd output voltage (V)out3) Increasing and further increasing the temperature coefficient of the voltage.
According to this configuration, since the intercept at the lower limit of the practical temperature range can be changed together with the voltage-temperature coefficient, it is possible to achieve an effect that an appropriate voltage-temperature coefficient can be set within the implementation conditions.
In some embodiments of the present application, the voltage droop circuit uses 2 transistors (Q3, Q4) to droop the voltage in 2 stages. However, the present application is not limited thereto, and the voltage drop circuit may drop the voltage and increase the voltage temperature coefficient of the 1 st output voltage in at least two stages using at least two voltage-dropping transistors.
FIG. 5 is another schematic diagram of a temperature monitoring circuit according to an embodiment of the present application. As shown in fig. 5, the temperature monitoring circuit has a temperature detection circuit 51, a voltage drop circuit 52, and an amplifier circuit 53. The temperature detection circuit 51 outputs an output voltage V that varies with a temperature changeout1The voltage drop circuit 52 outputs the changed output voltage Vout1Voltage temperature coefficient ofout3The amplifier circuit 53 outputs a pair of output voltages Vout3Amplified voltage Vout4。
As the inclination (corresponding to the voltage temperature coefficient) of the temperature monitoring circuit improves, amplification is performed using AMP, preventing the voltage level from increasing upward without binding. As shown in fig. 5, the voltage droop circuit 52 may use more than two stages to droop the voltage. For example, when the unused temperature range is close to the actual use temperature range, V is set to be largeroutThe voltage of (3) is set to be low, so that a multi-stage voltage drop can be added.
Since the added voltage itself has a temperature characteristic, a temperature characteristic gradient of, for example, 2mV/° c × n can be added to the original temperature monitoring circuit output temperature characteristic. By the aid of the drop voltage, the AMP gain thereafter can be suppressed, and therefore the expansion of the fluctuation of the finally obtained temperature monitoring output voltage can be suppressed. With AMP, there is formed "original temperature output characteristic fluctuation × AMP gain", and the fluctuation becomes a gain multiple, so there is a good effect of suppressing the AMP gain as much as possible.
In some embodiments of the present application, the practical temperature band and the output level limit range are set to the 2 nd output voltage (V)out3) The voltage drop circuit 30 makes the 1 st output voltage (V)out1) Conversion to the 2 nd output voltage (V)out3). For example, the 2 nd output voltage (V)out3) Has the following output characteristics: at the lower limit of the practical temperature range, by the range from the lower limit of the output level limit range to within + 10% of the output level limit range,
in some embodiments of the present application, the practical temperature band and output level limit range are set to the 3 rd output voltage (V)out4) The amplifier circuit 20a makes the 2 nd output voltage (V)out3) Is converted into the 3 rd output voltage (V)out4). For example, the 3 rd output voltage (V)out4) Has the following output characteristics: at the upper limit of the practical temperature band, the temperature is limited to a range within-10% from the upper limit of the output level limit range.
According to this configuration, the voltage temperature coefficient can be set to a large value within the implementation conditions, and the gain of the amplifier circuit 20a can be suppressed, so that the detection temperature error can be greatly improved.
As is apparent from the above-described embodiments, since the intercept at the lower limit and/or the upper limit of the practical temperature range can be changed together with the voltage temperature coefficient, it is possible to achieve an effect that an appropriate voltage temperature coefficient can be set within the implementation conditions.
Embodiments of the second aspect
The embodiments of the second aspect of the present application may be combined with the embodiments of the first aspect, or may be implemented separately, and the same contents as those of the embodiments of the first aspect are not described again.
In the related art, since the inclination of the temperature characteristic (corresponding to the voltage temperature coefficient) is small, the detection temperature error is large. In addition, since the temperature is monitored even in an unused temperature range (temperature outside a practical temperature range) such as low temperature or normal temperature, a circuit current is consumed and the voltage has a certain limit to the inclination with respect to the temperature. In addition, it is also necessary to ensure an output voltage in an unused temperature range.
Fig. 6 is a graph showing an example of the relationship between temperature and voltage and current in the related art. As shown in fig. 6, in the related art, the voltage V can be output even in an unused temperature rangeoutSo that there is a consumption of circuit current in the unused temperature range。
In some embodiments of the present application, the voltage droop circuit sets the 2 nd output voltage according to a utility temperature band; wherein the voltage droop circuit converts the 1 st output voltage to the 2 nd output voltage, the 2 nd output voltage having the following output characteristics: for temperatures outside the utility temperature band, the 2 nd output voltage is set to zero.
In some embodiments of the present application, the amplifier circuit sets the 3 rd output voltage according to a utility temperature band; wherein the amplifier circuit converts the 2 nd output voltage to the 3 rd output voltage, the 3 rd output voltage having the following output characteristics: for temperatures outside the utility temperature band, the 3 rd output voltage is set to zero.
FIG. 7 is a graph showing an example of the relationship between temperature and voltage and current according to an embodiment of the present application. As shown in FIG. 7, no voltage V is output in the unused temperature rangeoutSo that there is no consumption of circuit current in the unused temperature range.
For example, V in the actual use temperature range may be increasedoutIs set within the unused temperature range and cannot output VoutThe circuit of (1). Can not output V in the unused temperature rangeoutThe circuit of (2) is capable of reducing or eliminating (Cut) the circuit current consumed in the temperature monitoring circuit.
In some embodiments of the present application, the temperature detection circuit controls the voltage droop circuit and/or the amplifier circuit according to a utility temperature band; wherein the temperature detection circuit turns off the voltage drop circuit and/or the amplifier circuit when a temperature outside the utility temperature band is detected.
For example, the temperature detection circuit switches between an unused temperature range and an actually used temperature range, and the temperature monitoring circuit outputs a linear voltage to a temperature in the actually used temperature range, and turns OFF (OFF) the power supply of the temperature monitoring circuit in the case of the unused temperature range.
FIG. 8 is another schematic diagram of a temperature detection circuit and a temperature monitoring circuit according to an embodiment of the present application. As shown in fig. 8, the voltage of the Base (Base) of the bipolar transistor 801 of the temperature detection circuit 11 is adjusted to control the ON/OFF of the diode 802, and the temperature monitoring circuit 22 is turned ON/OFF (ON/OFF) to adjust the detected temperature. The specific structure of the temperature monitoring circuit 22 can refer to the voltage drop circuit and/or the amplifier circuit of fig. 3 and 5, for example.
It should be noted that fig. 8 above only schematically illustrates the temperature monitoring circuit and the temperature detection circuit of the embodiment of the present application, but the present application is not limited thereto. For example, the connection relationship between the modules or components may be adjusted appropriately, and some other modules or components may be added or some modules or components may be reduced. Those skilled in the art can appropriately modify the above description without being limited to the description of fig. 8.
Examples of the third aspect
The embodiment of the application also provides a temperature monitoring method, which corresponds to the temperature monitoring device in the embodiments of the first and second aspects. The same contents as those of the embodiments of the first and second aspects are not described herein again.
Fig. 9 is a schematic diagram of a temperature monitoring method according to an embodiment of the present application, and as shown in fig. 9, the temperature monitoring method includes:
step 902 of converting the 1 st output voltage into a 2 nd output voltage, the 2 nd output voltage being obtained by decreasing a voltage of the 1 st output voltage and increasing a voltage temperature coefficient of the 1 st output voltage using a base-emitter voltage of a voltage-decreasing transistor having the same characteristics as the transistor; and
It should be noted that fig. 9 above only illustrates the embodiment of the present application, but the present application is not limited thereto. For example, the order of execution of various operations may be modified, as appropriate, with additional or fewer operations. Those skilled in the art can appropriately modify the above description without being limited to the description of fig. 9.
The above apparatus and method of the present application may be implemented by hardware, or may be implemented by hardware in combination with software. The present application relates to a computer-readable program which, when executed by a logic component, enables the logic component to implement the above-described apparatus or constituent components, or to implement various methods or steps described above. The present application also relates to a storage medium such as a hard disk, a magnetic disk, an optical disk, a DVD, a flash memory, or the like, for storing the above program.
The methods/apparatus described in connection with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. For example, one or more of the functional block diagrams and/or one or more combinations of the functional block diagrams illustrated in the figures may correspond to individual software modules, or may correspond to individual hardware modules of a computer program flow. These software modules may correspond to various steps shown in the figures, respectively. These hardware modules may be implemented, for example, by solidifying these software modules using a Field Programmable Gate Array (FPGA).
A software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. A storage medium may be coupled to the processor such that the processor can read information from, and write information to, the storage medium; or the storage medium may be integral to the processor. The processor and the storage medium may reside in an ASIC. The software module may be stored in the memory of the mobile terminal or in a memory card that is insertable into the mobile terminal. For example, if the device (e.g., mobile terminal) employs a relatively large capacity MEGA-SIM card or a large capacity flash memory device, the software module may be stored in the MEGA-SIM card or the large capacity flash memory device.
One or more of the functional blocks and/or one or more combinations of the functional blocks described in the figures can be implemented as a general purpose processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or any suitable combination thereof designed to perform the functions described herein. One or more of the functional blocks and/or one or more combinations of the functional blocks described in connection with the figures may also be implemented as a combination of computing devices, e.g., a combination of a DSP and a microprocessor, a plurality of microprocessors, one or more microprocessors in conjunction with a DSP communication, or any other such configuration.
The present application has been described in conjunction with specific embodiments, but it should be understood by those skilled in the art that these descriptions are intended to be illustrative, and not limiting. Various modifications and adaptations of the present application may occur to those skilled in the art based on the spirit and principles of the application and are within the scope of the application.
Claims (10)
1. A temperature monitoring circuit has a temperature detection circuit that generates a 1 st output voltage according to temperature using a base-emitter voltage of a transistor,
characterized in that the temperature monitoring circuit further has:
a voltage drop circuit that converts the 1 st output voltage into a 2 nd output voltage, the 2 nd output voltage being obtained by dropping a voltage of the 1 st output voltage and increasing a voltage temperature coefficient of the 1 st output voltage using a base-emitter voltage of a voltage drop transistor having the same characteristics as the transistor; and
an amplifier circuit that converts the 2 nd output voltage into a 3 rd output voltage, the 3 rd output voltage being obtained by increasing the 2 nd output voltage and increasing a voltage temperature coefficient of the 2 nd output voltage.
2. The temperature monitoring circuit of claim 1,
the voltage drop circuit drops a voltage in at least two stages and increases a voltage temperature coefficient of the 1 st output voltage using at least two of the voltage drop transistors.
3. The temperature monitoring circuit according to claim 1 or 2,
the voltage droop circuit sets the 2 nd output voltage according to a utility temperature band and an output level limit range.
4. The temperature monitoring circuit of claim 3, wherein the voltage droop circuit converts the 1 st output voltage to the 2 nd output voltage, the 2 nd output voltage having the following output characteristics: at a lower limit of the utility temperature band, the 2 nd output voltage is within a range from a lower limit value of the output level limit range to a first value of the lower limit value plus a predetermined value;
the predetermined value is within 10% of the output level limit range.
5. The temperature monitoring circuit according to claim 1 or 2,
the amplifier circuit sets the 3 rd output voltage according to a practical temperature band and an output level limit range.
6. The temperature monitoring circuit of claim 5, wherein the amplifier circuit converts the 2 nd output voltage to the 3 rd output voltage, the 3 rd output voltage having the following output characteristics: at an upper limit of the utility temperature band, the 3 rd output voltage is in a range from an upper limit value of the output level limit range to a second value of the upper limit value minus a predetermined value;
the predetermined value is within 10% of the output level limit range.
7. The temperature monitoring circuit of claim 1,
the voltage drop circuit sets the 2 nd output voltage according to a practical temperature band;
wherein the voltage droop circuit converts the 1 st output voltage to the 2 nd output voltage, the 2 nd output voltage having the following output characteristics: for temperatures outside the utility temperature band, the 2 nd output voltage is set to zero.
8. The temperature monitoring circuit of claim 1,
the amplifier circuit sets the 3 rd output voltage according to a utility temperature band;
wherein the amplifier circuit converts the 2 nd output voltage to the 3 rd output voltage, the 3 rd output voltage having the following output characteristics: for temperatures outside the utility temperature band, the 3 rd output voltage is set to zero.
9. The temperature monitoring circuit of claim 1,
the temperature detection circuit controls the voltage reduction circuit and/or the amplifier circuit according to a practical temperature band; wherein the temperature detection circuit turns off the voltage drop circuit and/or the amplifier circuit when a temperature outside the utility temperature band is detected.
10. A temperature monitoring method using a base-emitter voltage of a transistor and generating a 1 st output voltage according to temperature, the temperature monitoring method further comprising:
converting the 1 st output voltage into a 2 nd output voltage, the 2 nd output voltage being obtained by reducing the voltage of the 1 st output voltage and increasing the voltage temperature coefficient of the 1 st output voltage using the base-emitter voltage of a voltage-reduction transistor having the same characteristics as the transistor; and
and converting the 2 nd output voltage into a 3 rd output voltage, wherein the 3 rd output voltage is obtained by increasing the 2 nd output voltage and increasing the voltage temperature coefficient of the 2 nd output voltage.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-225113 | 2019-12-13 | ||
| JP2019225113A JP7415522B2 (en) | 2019-12-13 | 2019-12-13 | temperature monitor circuit |
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| CN112985628A true CN112985628A (en) | 2021-06-18 |
| CN112985628B CN112985628B (en) | 2024-07-23 |
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| JP (1) | JP7415522B2 (en) |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024178837A1 (en) * | 2023-02-28 | 2024-09-06 | 上海艾为电子技术股份有限公司 | Temperature detection circuit and audio power amplifier |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2021096074A (en) | 2021-06-24 |
| JP7415522B2 (en) | 2024-01-17 |
| CN112985628B (en) | 2024-07-23 |
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