CN112967983B - Transfer system and transfer method - Google Patents

Transfer system and transfer method Download PDF

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Publication number
CN112967983B
CN112967983B CN202010997976.6A CN202010997976A CN112967983B CN 112967983 B CN112967983 B CN 112967983B CN 202010997976 A CN202010997976 A CN 202010997976A CN 112967983 B CN112967983 B CN 112967983B
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transfer
chip
substrate
adhesive layer
temporary substrate
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CN112967983A (en
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张嘉修
钟光韦
江仁杰
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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Priority to TW110132372A priority patent/TWI781745B/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages

Abstract

The present invention relates to a transfer system and a transfer method. The transfer system is used for transferring the chip and comprises a temporary substrate and a transfer device, wherein the temporary substrate is provided with a first surface and a second surface which are opposite, a first included angle is formed between the second surface and the first surface, and the first included angle is larger than 0 degrees and smaller than 90 degrees; the transfer device is provided with a transfer substrate and a plurality of transfer heads arranged on the transfer substrate, the transfer substrate is provided with a third surface and a fourth surface which are opposite, a second included angle is formed between the fourth surface and the third surface, the second included angle is larger than 0 degrees and smaller than 90 degrees, and the plurality of transfer heads are arranged on one side surface of the fourth surface, which is far away from the transfer substrate, and are parallel to the fourth surface at intervals. Thus, the chip can be more easily separated from the inclined surface, the temporary substrate can reduce the difficulty of separating the chip from the temporary substrate, and the transfer process can be further simplified by better matching the transfer equipment with the temporary substrate.

Description

Transfer system and transfer method
Technical Field
The present invention relates to the field of display, and in particular, to a transfer system and a transfer method.
Background
The MICRO-LED display panel comprises a plurality of pixel regions, and each pixel region comprises a red LED, a blue LED and a green LED chip. In the manufacturing process of the display, the three LED chips of red, green and blue need to be transferred from their respective growth substrates to the display backplane.
The existing bulk transfer method comprises the following steps:
firstly, transferring the chip to a first adhesive layer of a first temporary substrate;
the LED chips are transferred to structures such as a display back plate and the like through the transfer substrate, and the specific implementation mode is that the LED chips are adhered to the transfer substrate through the second adhesive layer on the surface of the transfer substrate, then the first adhesive layer on the first temporary substrate is selectively irradiated by laser to be debonded, so that the first adhesive layer is carbonized or gasified, and the LED chips are separated from the first temporary substrate and are adhered to the transfer substrate. However, the dispergation process is complicated, and it is difficult to stably implement mass transfer, which is disadvantageous for mass production of MICRO-LED displays.
Therefore, how to reduce the difficulty of detaching the chip from the temporary substrate is an urgent problem to be solved.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present application aims to provide a transfer system and a transfer method, which aim to solve the problem that the chip in the prior art is difficult to detach from the temporary substrate.
A transfer system for transferring chips, comprising a temporary substrate and a transfer device, the temporary substrate having opposing first and second surfaces with a first angle therebetween, the first angle being greater than 0 ° and less than 90 °; the transfer apparatus has a transfer substrate and a plurality of transfer heads disposed on the transfer substrate, the transfer substrate has a third surface and a fourth surface which are opposite to each other, the fourth surface has a second included angle therebetween, the second included angle is greater than 0 degree and less than 90 degrees, and is plural the transfer heads are spaced apart and located on the fourth surface, and the transfer heads deviate from a side surface of the transfer substrate and the fourth surface are parallel.
In the above-mentioned transfer system, the temporary substrate and the transfer apparatus are included, wherein the first surface and the second surface of the temporary substrate have an included angle, that is, the second surface is an inclined surface with respect to the first surface, and the first surface is also an inclined surface with respect to the second surface, so that when the chip is disposed on the first surface or the second surface of the temporary substrate, since the surface on which the chip is disposed is an inclined surface, the chip is more easily separated from the inclined surface than the non-inclined surface in the prior art, and the temporary substrate can reduce the difficulty of separating the chip from the temporary substrate. And an included angle is formed between the third surface and the fourth surface on the transfer substrate, a plurality of transfer heads are arranged on the fourth surface at intervals, and the surface of one side of each transfer head, which is far away from the transfer substrate, is parallel to the fourth surface, so that the transfer equipment and the temporary substrate are better matched to further simplify the transfer process.
Optionally, the first included angle is equal to the second included angle. Therefore, the matching degree of the transfer device and the temporary substrate is higher, so that the transfer device and the temporary substrate are better matched in the transfer process, and the chip transfer process is simplified.
Based on the same inventive concept, the application also provides a chip transfer method, which is applied to the transfer system and comprises the following steps: forming a first adhesive layer on the second surface of the temporary substrate, and adhering a chip on the growth substrate to the temporary substrate by using the first adhesive layer; manufacturing the first adhesive layer adhered with the chip into a plurality of weakening structures; coating a second adhesive layer on the transfer head, and adhering the chip on the temporary substrate through the second adhesive layer; applying a first predetermined force to a predetermined end of the transfer device to cause the weakening structure to break and transfer the chip separated from the temporary substrate to the transfer device; transferring the chip on the transfer apparatus to a predetermined structure.
In the above-mentioned transferring method, the chip is transferred to the transferring device by applying a first predetermined force to the predetermined end of the transferring device to separate the chip from the weakening structure, and the weakening structure is forced at a single point to be more easily separated from the chip because the chip is located on the inclined surface of the temporary substrate and the first predetermined force is applied to the predetermined end of the transferring device. According to the method, the chip is transferred to the transfer equipment from the temporary substrate by forming the weakening structure and applying the smaller first preset acting force, the use of a glue-releasing process in the prior art is avoided, the chip is transferred to the transfer equipment through a simple process, the difficulty of separating the chip from the temporary substrate is reduced, and the production quantity of the display is facilitated.
Optionally, the first glue layer with the chip adhered thereto is made into a plurality of weakening structures, including: and removing part of the first adhesive layer, so that the remaining first adhesive layer forms a plurality of weakening structures.
Optionally, the removing part of the first glue layer, so that the remaining first glue layer forms a plurality of weakening structures, includes: arranging a shielding piece on the surface of each chip far away from the temporary substrate, wherein the shielding piece comprises a plurality of open holes arranged at intervals, the projections of the open holes on the temporary substrate are correspondingly positioned in a middle area one by one, and the middle area is the surface area of the temporary substrate between two adjacent chips; injecting a solvent into the space between two adjacent chips from the upper opening hole, so that the solvent dissolves part of the first glue layer to form a plurality of weakening structures. Such a method is easier to implement and may further ensure that a weakening structure of a predetermined size as well as a predetermined shape is formed at the same time.
Optionally, the cross-sectional area of the opening in a direction perpendicular to the second surface gradually increases. This allows the force required to separate the weakening structure from the corresponding chip to be gradually reduced, thereby further ensuring that all weakening structures and corresponding chips can be separated well by applying a smaller first predetermined force.
Optionally, coating a second adhesive layer on the transfer head, and adhering the chip on the temporary substrate through the second adhesive layer, includes: aligning the second glue layer on the transfer head with the chip such that the third surface is parallel to the first surface and the fourth surface is parallel to the second surface; and applying a second preset acting force to the transfer device to enable the second adhesive layer to adhere to the chip on the temporary substrate. In the method, the shape of the transfer substrate is matched with the shape of the temporary substrate to a higher degree, the transfer head is arranged on the inclined surface of the transfer substrate, and when the second preset acting force is applied to the transfer substrate of the transfer device, the downward second acting force is directly applied to the third surface, so that the scheme is more convenient to apply the second preset acting force, and the transfer method is further simplified.
Optionally, applying a first predetermined force to a predetermined end of the transfer device to break the weakening structure and transfer the chip separated from the temporary substrate to the transfer device, comprises: and applying the first preset acting force to the first end of the transfer substrate to enable the transfer substrate to start rotating around a preset axis, so that the weakening structure is sequentially broken according to the distance from the first end of the transfer substrate to the first end of the transfer substrate from small to large, the thickness of the first end of the temporary substrate is smaller than that of the second end of the temporary substrate, and the preset axis is on the plane of the third surface and perpendicular to the side wall of the transfer substrate. In this manner, the first end of the transfer substrate is the end corresponding to the first end of the temporary substrate, and the first predetermined acting force is applied to the first end of the transfer substrate, so that the weakening structure located at the position where the thickness of the temporary substrate is smaller is separated from the corresponding chip first, and thus the weakening structure can be separated from the corresponding chip by using a smaller predetermined acting force.
Optionally, adhering the chip on the growth substrate to the temporary substrate by using the first glue layer includes: attaching a chip source structure to the first adhesive layer so that the chip in the chip source structure is adhered to the surface of the first adhesive layer, wherein the chip source structure comprises the growth substrate and a plurality of chips arranged on the growth substrate; and removing the growth substrate.
Optionally, transferring the chip located on the transfer apparatus onto a predetermined structure, comprises: bonding the transfer device provided with the chip with the predetermined structure, and enabling the chip and the predetermined structure to be arranged in contact; removing the transfer device.
Drawings
Fig. 1 is a schematic structural diagram of a temporary substrate in a transfer system according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a transfer apparatus in a transfer system according to an embodiment of the present application;
FIG. 3 is a schematic diagram of the bonded structure of the chip source structure and the first adhesive layer;
FIG. 4 is a schematic diagram of the structure of FIG. 3 after the growth substrate is removed;
FIG. 5 is a schematic structural diagram illustrating a weakened structure formed after a portion of the first adhesive layer in FIG. 4 is removed;
FIG. 6 is a schematic view of a first structure to be attached and a second structure to be attached being attached to form an attaching structure;
FIG. 7 is a schematic view of the structure of FIG. 6 after a first predetermined force is applied thereto;
FIG. 8 is a schematic view of the transfer of a chip to a predetermined structure; and
fig. 9 is a schematic structural view of the transfer apparatus in fig. 8 removed.
Description of reference numerals:
10. a temporary substrate; 11. a first surface; 12. a second surface; 20. a transfer device; 21. transferring the substrate; 22. a transfer head; 201. a third surface; 202. a fourth surface; 30. a first glue layer; 31. a weakening structure; 40. a chip source structure; 41. a growth substrate; 42. a chip; 50. a predetermined configuration.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
As mentioned in the background art, the prior art needs a glue-releasing process during the chip transferring process, which is complicated and results in a complicated chip transferring process.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
In an exemplary embodiment of the present application, a transfer system for transferring a chip is provided, the transfer system comprising a temporary substrate 10 and a transfer apparatus, as shown in fig. 1, the temporary substrate 10 having a first surface 11 and a second surface 12 opposite to each other, the second surface 12 having a first angle with the first surface 11, the first angle being greater than 0 ° and smaller than 90 °; a transfer apparatus 20, as shown in fig. 2, the transfer apparatus 20 includes a transfer substrate 21 and a plurality of transfer heads 22 disposed on the transfer substrate 21, the transfer apparatus 20 includes a third surface 201 and a fourth surface 202 opposite to each other, a second included angle is formed between the fourth surface 202 and the third surface 201, the second included angle is greater than 0 ° and less than 90 °, the plurality of transfer heads 22 are disposed on the fourth surface 202 at intervals, and a side surface of the transfer head 22 facing away from the transfer substrate 21 is parallel to the fourth surface 202.
In the above-mentioned transfer system, the temporary substrate and the transfer apparatus are included, wherein the first surface and the second surface of the temporary substrate have an included angle, that is, the second surface is an inclined surface with respect to the first surface, and the first surface is also an inclined surface with respect to the second surface, so that when the chip is disposed on the first surface or the second surface of the temporary substrate, since the surface on which the chip is disposed is an inclined surface, the chip is more easily separated from the inclined surface than the non-inclined surface in the prior art, and the temporary substrate can reduce the difficulty of separating the chip from the temporary substrate. And, there is included angle between the above-mentioned third surface and the above-mentioned fourth surface on the above-mentioned transfer base plate, a plurality of above-mentioned transfer heads locate at above-mentioned fourth surface alternatively, and the side surface that the above-mentioned transfer head deviates from the above-mentioned transfer base plate is parallel to the above-mentioned fourth surface, so make transfer apparatus and temporary base plate cooperate in order to further simplify the transfer process better.
In another embodiment of the present application, the first included angle is equal to the second included angle. Therefore, the matching degree of the transfer device and the temporary substrate is higher, so that the transfer device and the temporary substrate are better matched in the transfer process, and the chip transfer process is simplified.
In another exemplary embodiment of the present application, there is provided a chip transfer method, including:
step S101, forming a first glue layer 30 on the second surface 12 of the temporary substrate 10, and adhering the chip 42 on the growth substrate to the temporary substrate 10 by using the first glue layer 30, as shown in fig. 3 and 4;
step S102, making the first adhesive layer 30 adhered with the chip 42 into a plurality of weakening structures 31, as shown in fig. 5;
step S103, coating a second adhesive layer on the transfer head 22, and adhering the chip 42 on the temporary substrate 10 through the second adhesive layer, as shown in fig. 6;
step S104 of applying a first predetermined force to a predetermined end of the transfer device 20 to break the weakening structure 31, so that the chip 42 separated from the temporary substrate is transferred to the transfer device, as shown in fig. 7;
step S105, transferring the chip 42 on the transferring apparatus 20 to a predetermined structure 50, as shown in fig. 8 and 9.
In the above-mentioned transferring method, the chip is transferred to the transferring device by applying a first predetermined force to the predetermined end of the transferring device to separate the chip from the weakening structure, and the weakening structure is forced at a single point to be more easily separated from the chip because the chip is located on the inclined surface of the temporary substrate and the first predetermined force is applied to the predetermined end of the transferring device. According to the method, the chip is transferred to the transfer equipment from the temporary substrate by forming the weakening structure and applying the smaller first preset acting force, the use of a glue-releasing process in the prior art is avoided, the chip is transferred to the transfer equipment through a simple process, the difficulty of separating the chip from the temporary substrate is reduced, and the production quantity of the display is facilitated.
In one embodiment of the present application, the above-mentioned manufacturing of the first adhesive layer 30 adhered with the chip 42 into the plurality of weakening structures 31 includes: a portion of the first adhesive layer 30 is removed, so that a plurality of the weakening structures 31 are formed in the remaining first adhesive layer 30.
In practical applications, a portion of the first glue layer may be removed in any feasible manner, so as to form a plurality of weakening structures. The person skilled in the art can select a suitable method for forming the plurality of weakening structures according to the actual situation.
In a specific embodiment of the present application, removing a portion of the first adhesive layer to form a plurality of weakening structures on the remaining first adhesive layer includes: arranging a shielding piece on the surface of the chip far away from the temporary substrate, wherein the shielding piece comprises a plurality of openings arranged at intervals, the projections of the openings on the temporary substrate are correspondingly positioned in a middle area one by one, and the middle area is the surface area of the temporary substrate between two adjacent chips; and injecting a solvent into the space between two adjacent chips from the opening hole, so that the solvent dissolves part of the first adhesive layer to form a plurality of weakening structures. Such a method is easier to implement and may further ensure that a weakening structure of a predetermined size as well as a predetermined shape is formed at the same time.
It should be noted that, in the present application, the solvent is matched with the material of the corresponding first glue layer, that is, the solvent is a material capable of removing the first glue layer. In a specific embodiment, the material of the first adhesive layer is an adhesive material including Polyimide (PI) main chains, and correspondingly, the solvent is an organic solvent such as NMP (N-methylpyrrolidone). In a specific application process, the corresponding solvent may be determined according to the material of the corresponding first glue layer.
The trompil in above-mentioned scheme and middle zone one-to-one correspond, and the mode or the arrangement mode that exactly are the trompil correspond with the mode or the arrangement mode of chip on the temporary substrate, if the chip on the temporary substrate is the matrix distribution, then the trompil on the shelter also presents the matrix distribution correspondingly, if the chip on the temporary substrate only has a one line (the chip is greater than three), then correspondingly, the trompil on the shelter also has only a one line.
The shape of the weakening structure of the present application is not limited to the shape of the trapezoid in the cross section shown in fig. 5, and may be other shapes, such as a rectangular parallelepiped, a triangular prism, a triangular pyramid, or a cylinder, and the specific shape may be determined by manufacturing parameters such as the time for removing the first adhesive layer. In addition, the size of the weakening structure can be controlled by controlling parameters such as the removal time of the first adhesive layer.
During actual operation, the pulling force between the weakening structure 31 and the chip 42 near the end (left end in fig. 7, left and right are judged as facing the screen) where the first predetermined force is applied is relatively large, the pulling force between the weakening structure 31 and the chip 42 is gradually reduced in the direction away from the end where the first predetermined force is actually applied, and the pulling force between the weakening structure 31 and the chip 42 at the other end (right end in fig. 7) is relatively minimum. In order to further ensure that the application of the smaller first predetermined force can ensure that all of the weakening structures 31 and the corresponding chips 42 can be separated more easily, in an embodiment of the present application, the cross-sectional area of the opening in the direction perpendicular to the second surface is gradually increased in a first predetermined direction from the end of the transfer substrate 21 where the first predetermined force is applied to the other end of the transfer substrate 21, so that the size of the weakening structures 31 formed is gradually reduced along the first predetermined direction, so that the force required for separating the weakening structures 31 from the corresponding chips 42 in the first predetermined direction is gradually reduced, thereby further ensuring that the application of the smaller first predetermined force can better separate all of the weakening structures 31 and the corresponding chips 42.
In another embodiment of the present application, coating a second adhesive layer on the transfer head 22, and adhering the chip 42 on the temporary substrate 10 through the second adhesive layer includes: aligning the second adhesive layer on the transfer head 22 with the chip 42 such that the third surface 201 is parallel to the first surface 11 and the fourth surface 202 is parallel to the second surface 12; a second predetermined force is applied to the transfer device 20 so that the second adhesive layer adheres to the chip 42 on the temporary substrate 10, as shown in fig. 8 (the second adhesive layer is not shown). According to the method, the transfer equipment can be further ensured to accurately adhere the preset chip through the second adhesive layer, so that the accuracy of the subsequent transfer process is further ensured.
In another embodiment of the present application, applying a first predetermined force to a predetermined end of the transfer apparatus 20 to break the weakening structure 31 and move the chip 42 separated from the temporary substrate 10 onto the transfer apparatus 20 includes: the first predetermined force is applied to the first end of the transfer substrate 21, so that the transfer substrate 21 starts to rotate around a predetermined axis, the thickness of the first end of the temporary substrate 10 is smaller than that of the second end of the temporary substrate 10, and the predetermined axis is on the plane of the third surface 201 and perpendicular to the side wall of the transfer substrate 21, so that the weakening structure 31 is broken sequentially from small to large distances from the first end of the transfer substrate 21. In this way, the first end of the transfer substrate 21 is the end corresponding to the first end of the temporary substrate 10, and the first predetermined force is applied to the first end of the transfer substrate 21, so that the weakening structure 31 located at the position where the thickness of the temporary substrate 10 is small is separated from the corresponding chip 42 first, as shown in fig. 7, so that the weakening structure can be separated from the corresponding chip with a smaller predetermined force.
In addition, in practical applications, the shape of the transfer substrate 21 may be completely matched with the shape of the temporary substrate 10, as shown in fig. 2, that is, the transfer substrate 21 has a third surface 201 and a fourth surface 202 opposite to each other, and a second included angle is formed between the fourth surface 202 and the third surface 201, the second included angle is greater than 0 ° and less than 90 °, and a plurality of the transfer heads 22 are located on the fourth surface 202 at intervals, and the first included angle is equal to the second included angle.
In practical applications, adhering the chip 42 on the growth substrate 41 to the temporary substrate 10 by using the first glue layer 30 includes: bonding a chip source structure 40 to the first adhesive layer 30 such that the chip 42 in the chip source structure 40 is bonded to the surface of the first adhesive layer 30, as shown in fig. 3, wherein the chip source structure 40 includes the growth substrate 41 and a plurality of chips 42 disposed on the growth substrate 41; the growth substrate 41 is removed to obtain the structure shown in fig. 4.
The growth substrate may be any feasible growth substrate in the prior art, such as a sapphire growth substrate, a GaN growth substrate, etc., and one skilled in the art can select a suitable transfer substrate according to actual conditions.
The method for removing the growth substrate can be selected according to practical situations, such as the specific material of the growth substrate. In a specific embodiment of the present application, the removing the growth substrate, which is a sapphire growth substrate, includes: irradiating the growth substrate by laser to remove corresponding Ga; and peeling off the growth substrate after the laser irradiation.
In another embodiment of the present application, transferring the chip 42 on the transferring apparatus 20 to a predetermined structure 50 includes: bonding the transfer device 20 provided with the chip 42 with the predetermined structure 50, and placing the chip 42 in contact with the predetermined structure 50, as shown in fig. 8; the above-described transfer device 20 is removed to form the structure shown in fig. 9.
It should be noted that the chip in the present application may be any chip that needs to be transferred in the prior art, and those skilled in the art can apply the transferring method and transferring system in the present application to the transferring process of a suitable chip according to the actual situation.
In another embodiment of the present application, the chip includes at least one of an LED chip, a Micro LED chip, and a Mini LED chip. Namely, the above-mentioned transfer method and transfer system are applied to the transfer process of these chips.
In a specific embodiment of the present application, the predetermined structure includes a display back plate. It should be further noted that the predetermined structure in the present application is not limited to the display back plate, and the corresponding predetermined structure may be determined according to actual situations.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.

Claims (9)

1. A chip transfer method is applied to a transfer system and is characterized in that the transfer system comprises a temporary substrate and a transfer device, wherein the temporary substrate is provided with a first surface and a second surface which are opposite, a first included angle is formed between the second surface and the first surface, and the first included angle is larger than 0 degrees and smaller than 90 degrees; the transfer apparatus has a transfer substrate and a plurality of transfer heads disposed on the transfer substrate, the transfer substrate has a third surface and a fourth surface which are opposite to each other, a second included angle is formed between the fourth surface and the third surface, the second included angle is greater than 0 ° and smaller than 90 °, the plurality of transfer heads are disposed on the fourth surface at intervals, a side surface of the transfer head facing away from the transfer substrate is parallel to the fourth surface, and the transfer method includes:
forming a first adhesive layer on the second surface of the temporary substrate, and adhering a chip on the growth substrate to the temporary substrate by using the first adhesive layer;
manufacturing the first adhesive layer adhered with the chip into a plurality of weakening structures;
coating a second adhesive layer on the transfer head, and adhering the chip on the temporary substrate through the second adhesive layer;
applying a first predetermined force to a predetermined end of the transfer device to cause the weakening structure to break and transfer the chip separated from the temporary substrate to the transfer device;
transferring the chip on the transfer apparatus to a predetermined structure.
2. The transfer method of claim 1, wherein the first angle is equal to the second angle.
3. The transfer method of claim 1, wherein forming the first adhesive layer with the attached chips into a plurality of weakened structures comprises:
and removing part of the first adhesive layer, so that the remaining first adhesive layer forms a plurality of weakening structures.
4. The transfer method of claim 3, wherein said removing portions of said first adhesive layer such that the remaining first adhesive layer forms a plurality of weakened structures comprises:
arranging a shielding piece on the surface of each chip far away from the temporary substrate, wherein the shielding piece comprises a plurality of open holes arranged at intervals, the projections of the open holes on the temporary substrate are correspondingly positioned in a middle area one by one, and the middle area is the surface area of the temporary substrate between two adjacent chips;
injecting a solvent into the space between two adjacent chips from the upper opening hole, so that the solvent dissolves part of the first glue layer to form a plurality of weakening structures.
5. The transfer method of claim 4 wherein said openings have a progressively increasing cross-sectional area in a direction perpendicular to said second surface.
6. The transfer method according to claim 1, wherein coating a second adhesive layer on the transfer head, the chip on the temporary substrate being adhered by the second adhesive layer, comprises:
aligning the second glue layer on the transfer head with the chip such that the third surface is parallel to the first surface and the fourth surface is parallel to the second surface;
and applying a second preset acting force to the transfer device to enable the second adhesive layer to adhere to the chip on the temporary substrate.
7. The transfer method according to any one of claims 1 to 6, wherein applying a first predetermined force to a predetermined end of the transfer device to break the weakening structure to transfer the chip separated from the temporary substrate onto the transfer device comprises:
and applying the first preset acting force to the first end of the transfer substrate to enable the transfer substrate to start rotating around a preset axis, so that the weakening structure is sequentially broken according to the distance from the first end of the transfer substrate to the first end of the transfer substrate from small to large, the thickness of the first end of the temporary substrate is smaller than that of the second end of the temporary substrate, and the preset axis is on the plane of the third surface and perpendicular to the side wall of the transfer substrate.
8. The transfer method according to any one of claims 1 to 6, wherein adhering the chip on the growth substrate to the temporary substrate with the first glue layer comprises:
attaching a chip source structure to the first adhesive layer so that the chip in the chip source structure is adhered to the surface of the first adhesive layer, wherein the chip source structure comprises the growth substrate and a plurality of chips arranged on the growth substrate;
and removing the growth substrate.
9. The transfer method according to any one of claims 1 to 6, wherein transferring the chip located on the transfer device onto a predetermined structure comprises:
bonding the transfer device provided with the chip with the predetermined structure, and enabling the chip and the predetermined structure to be arranged in contact;
removing the transfer device.
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